Method for manufacturing semiconductor device and dicing die bonded film

Abstract

This method for manufacturing a semiconductor device is provided with a step in which a film (B), which is a dicing die-bonded film, is attached to a plurality of semiconductor chips, which are obtained by singulating a semiconductor wafer, under a heating condition, the dicing die-bonded film being provided with: a dicing film (film (A)); the pressure-sensitive adhesive film is provided with a base material film, a pressure-sensitive adhesive layer arranged on the base material film, and a crystal grain bonding film (film B) arranged on the pressure-sensitive adhesive layer; and manufacturing a semiconductor chip with a film (B) sheet by expanding the film (A) under cooling conditions to singulate the film (B). The semiconductor chip with the film (B) sheet has a semiconductor chip and the film (B) sheet obtained by singulating the film (B). The film (B) has a thickness of 20 [mu] m or less. The film (A) has a tensile stress at 20% extension at 0 DEG C as determined by a tensile test of 15 MPa or more. And the thermal shrinkage at 70 DEG C as determined by thermomechanical analysis is 5% or less.

Description

TECHNICAL FIELD

[0001] The present application relates to a manufacturing method of a semiconductor device and a dicing die-bonding integrated film. BACKGROUND

[0002] A dicing die-bonding integrated film in which a dicing film and a die-bonding film are integrated is sometimes used for manufacturing a semiconductor device (semiconductor package) (for example, Patent Literatures 1 and 2), the dicing film is used for fixing a semiconductor wafer in a process of singulating the semiconductor wafer, and has a base film and a pressure-sensitive adhesive layer, and the die-bonding film is used for bonding between a substrate or other semiconductor chips. The die-bonding film constituting the dicing die-bonding integrated film generally has a thickness of about several tens of μm.

[0003] In recent years, as a method of singulating a semiconductor wafer, a SDBG (Stealth Dicing Before Grinding) method, a DBG (Dicing Before Grinding) method, and the like are put into practical use (for example, Patent Literature 3). The SDBG method is a method of singulating a semiconductor wafer into a plurality of semiconductor chips by forming a modified region inside the semiconductor wafer by irradiating laser light, and then grinding (polishing) the semiconductor wafer from the back surface side and cutting the semiconductor wafer into the plurality of semiconductor chips with the modified region as a division starting point. The DBG method is a method of singulating a semiconductor wafer into a plurality of semiconductor chips by forming a groove of a prescribed depth on the surface of the semiconductor wafer with a dicing blade or the like, and then grinding (polishing) the semiconductor wafer from the back surface side to the groove. The plurality of semiconductor chips obtained by singulating by these methods have the die-bonding film of the dicing die-bonding integrated film attached thereto under heating conditions. Next, the die-bonding film is singulated by expanding (cooling expansion) the dicing film under cooling conditions, and thus a semiconductor chip with a die-bonding film piece to which the die-bonding film is singulated is obtained. Next, a semiconductor device can be manufactured by picking up the obtained semiconductor chip with the die-bonding film piece, and mounting it on a substrate or other semiconductor chips.

[0004] PRIOR ART DOCUMENTS PATENT LITERATURE Patent Literature 1: Japanese Patent Application Laid-Open No. 2019-175958 Patent Literature 2: International Publication No. 2018 / 105613 Patent Literature 3: Japanese Patent Application Laid-Open No. 2022-179420 SUMMARY

[0005] PROBLEMS TO BE SOLVED BY THE INVENTION However, with an increase in the number of stacked semiconductor chips in a semiconductor device and thinning of the semiconductor chips, it is desired to apply a die bonding film having an extremely thin thickness (e.g., 20 μm or less). However, according to the inventors' studies, it has been found that, in a manufacturing method of a semiconductor device including a process of attaching a die bonding film of a die-bonding-integrated film to a plurality of semiconductor chips under a heating condition (e.g., 60°C or higher) and a process of singulating the die bonding film by expanding the die-bonding-integrated film under a cooling condition (e.g., 0°C or lower) to thereby produce semiconductor chips to which pieces of the die bonding film are attached, when the die bonding film having an extremely thin thickness is applied to the die bonding film of the die-bonding-integrated film, there is a tendency that the die bonding film is difficult to be divided in the cooling expansion. If the die bonding film is not easily divided, it becomes difficult to pick up the semiconductor chips to which the pieces of the die bonding film are attached, and thus the yield can be reduced in the manufacturing of the semiconductor device.

[0006] Therefore, a main object of the present application is to improve the cooling divisibility of a die bonding film having a thickness of 20 μm or less in a prescribed manufacturing method of a semiconductor device.

[0007] Means for solving the technical problem Figure 4 is a plan view schematically showing a state after singulating a semiconductor wafer. Figure 4 A plurality of semiconductor chips C obtained by singulating a semiconductor wafer are present on the die bonding film 1. In a state after singulating the semiconductor wafer, the end portion (region indicated by X in the drawing) in the MD direction (Machine Direction: mechanical direction, direction parallel to the length direction (flow direction) in a raw piece to which a base film is applied) of the semiconductor wafer can be divided into an end portion (region indicated by X in the drawing) and a central portion (region indicated by Y in the drawing) other than the end portion. Figure 4 The end portion of the semiconductor wafer can be defined as a region up to a cutting line from each of both ends in the MD direction of the semiconductor wafer to a prescribed position (e.g., the 5th bar). The central portion of the semiconductor wafer can be defined as a region other than the end portion of the semiconductor wafer. Figure 4

[0008] As a result of the inventors' studies on the cooling divisibility of a die bonding film, it has been found that, in a die-bonding-integrated film, when the tensile stress of a cutting film under a cooling condition is excessively low, especially in the central portion of a semiconductor wafer (refer to the region indicated by Y in the drawing), the die bonding film is difficult to be divided in the cooling expansion. Figure 4 ​) has a tendency to decrease. As a result of further research by the present inventors, it was found that the cut width between the semiconductor chips (the gap between the semiconductor chips) after the dicing die-bonding integrated film's die-bonding film is attached to the plurality of semiconductor chips under heating conditions is correlated to the cooling separation property of the die-bonding film, and if the cut width is too wide, stress is dispersed when cooling expands, and particularly in the end portions of the semiconductor wafer (refer to Figure 4 ) has a tendency to decrease. As a result of detailed research by the present inventors on the cause of the cut width expanding, the following fact was found: when the dicing die-bonding integrated film's die-bonding film is attached to the plurality of semiconductor chips, the dicing film thermally shrinks due to heating, and as a result of this thermal shrinkage, the die-bonding film is stretched in the expanding direction and occurs.

[0009] Based on the above insight, the present inventors found that by using a dicing film having these properties within a prescribed range, the above problems can be solved, and thus completed the present invention.

[0010] The present invention includes [1] to [5].

[0011] [1] A method for manufacturing a semiconductor device, comprising the steps of: (A) attaching a die-bonding film of a dicing die-bonding integrated film to a plurality of semiconductor chips obtained by singulating a semiconductor wafer under heating conditions, the dicing die-bonding integrated film having: a dicing film having a base film and a pressure-sensitive adhesive layer provided on the base film, and the die-bonding film provided on the pressure-sensitive adhesive layer; and (B) producing a semiconductor chip with a die-bonding film piece by singulating the die-bonding film by expanding the dicing film under cooling conditions, the semiconductor chip with a die-bonding film piece having the semiconductor chip and a die-bonding film piece obtained by singulating the die-bonding film, the die-bonding film having a thickness of 20 μm or less, the dicing film having a tensile stress at 20% elongation at 0°C based on a tensile test of 15 MPa or more and a thermal shrinkage rate at 70°C based on thermal mechanical analysis of 5% or less.

[0012] [2] The method for manufacturing a semiconductor device according to [1], wherein the dicing film has a maximum thermal shrinkage rate between 80 and 140°C based on thermal mechanical analysis of 10% or more.

[0013] [3] The method for manufacturing a semiconductor device according to [1] or [2], wherein in (A), the method for singulating the semiconductor wafer is a stealth dicing method or a half-cut dicing method.

[0014] [4] A dicing die-bonding integrated film comprising: a dicing film having a base film and a pressure-sensitive adhesive layer provided on the base film; and a die-bonding film provided on the pressure-sensitive adhesive layer, the die-bonding film has a thickness of 20 μm or less, the dicing film has a tensile stress at 20% elongation at 0°C of 15 MPa or more based on a tensile test, and a thermal shrinkage at 70°C of 5% or less based on a thermal mechanical analysis.

[0015] [5] The dicing die-bonding integrated film according to [4], wherein the dicing film has a maximum thermal shrinkage between 80 and 140°C of 10% or more based on a thermal mechanical analysis.

[0016] Effects of Invention According to the present invention, in the prescribed method for manufacturing a semiconductor device, the cooling splitability of a die-bonding film having a thickness of 20 μm or less can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 is a cross-sectional view schematically showing an embodiment of a dicing die-bonding integrated film.

[0018] Figure 2 is a cross-sectional view schematically showing a method for manufacturing a semiconductor device, Figure 2 (a) of Figure 2 (b) of Figure 2 (c) of is a cross-sectional view schematically showing each step.

[0019] Figure 3 is a cross-sectional view schematically showing a method for manufacturing a semiconductor device, Figure 3 (a) of Figure 3 (b) of is a cross-sectional view schematically showing each step.

[0020] Figure 4 is a plan view schematically showing a state after singulating a semiconductor wafer.

[0021] Figure 5 is a plan view showing a measurement site in measurement of a cut width after attachment of an embodiment, Figure 5 (a) of is a plan view showing a measurement site of an end portion of a semiconductor wafer.Figure 5 (b) is a top view showing the measurement area in the center of the semiconductor wafer.

[0022] Figure 6 This is a top view showing the measurement area in the measurement of the slit width after heat shrinkage in the embodiment. Detailed Implementation

[0023] Hereinafter, embodiments of the present invention will be described with appropriate reference to the accompanying drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, unless otherwise indicated, the constituent elements (including steps, etc.) are not essential. The sizes of the constituent elements in the figures are conceptual, and the relative sizes of the constituent elements are not limited to those shown in the figures.

[0024] The numerical values ​​and their ranges used in this specification are the same and do not limit the invention. In this specification, the numerical range indicated by "~" represents the range in which the values ​​described before and after "~" are respectively the minimum and maximum values. Within the numerical ranges described in stages in this specification, the upper or lower limit of one numerical range can be replaced by the upper or lower limit of other numerical ranges described in stages. Furthermore, the upper or lower limit of the numerical ranges described in this specification can be replaced by the values ​​shown in the embodiments.

[0025] In this specification, "(meth)acrylate" refers to at least one of acrylate and its corresponding methacrylate. The same applies to other similar expressions such as "(meth)acryloyl". Furthermore, "(poly)" refers to both the presence and absence of the prefix "poly". "A or B" may include either A or B, or both. Unless otherwise specified, the materials exemplified below may be used individually or in combination of two or more. Regarding the content of each component in the composition, if multiple substances equivalent to each component are present in the composition, unless otherwise specified, the total amount of such substances present in the composition is used.

[0026] [Integrated membrane with grain cutting and bonding] Figure 1 This is a cross-sectional view schematically illustrating one embodiment of a grain-jointed integral film. Figure 1 The die-joining integrated film 10 shown includes: a die-joining film 1 (hereinafter, sometimes referred to as an "adhesive layer") and a die-joining film 5, which has a pressure-sensitive adhesive layer 2 adhered to the die-joining film 1. The die-joining film 5 has a substrate film 3 and a pressure-sensitive adhesive layer 2 disposed on the substrate film 3.

[0027] The die-bonding film 1 is an adhesive film for bonding a semiconductor chip to a substrate or another semiconductor chip, and is also sometimes referred to as a die attach film (DAF). The die-bonding film 1 has, for example, a circular main surface that covers the entire main surface of a semiconductor wafer.

[0028] The die-bonding film 1 (adhesive layer) has a thickness of 20 μm or less. The thickness of the die-bonding film 1 is 20 μm or less, for example, and is advantageous for use in manufacturing a semiconductor package having a thin thickness with multiple semiconductor chips. The thickness of the die-bonding film 1 can be, for example, 18 μm or less, 16 μm or less, 14 μm or less, 12 μm or less, or 10 μm or less, and can also be 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more.

[0029] The die-bonding film 1 can be a film formed of an adhesive that is typically used for the bonding of semiconductor chips. The die-bonding film 1 can be a thermosetting adhesive. The thermosetting adhesive that constitutes the die-bonding film 1 contains, for example, a thermosetting component and a high-molecular-weight resin component (elastomer).

[0030] The thermosetting component is a compound (resin) having a reactive group that forms a crosslinked structure through self-polymerization and / or reaction with a curing agent. The thermosetting component can contain, for example, an epoxy resin, and can also contain, in addition to the epoxy resin, a phenol resin that functions as a curing agent for the epoxy resin. The content of the thermosetting component can be 5 to 30 parts by mass relative to 100 parts by mass of the total amount of the die-bonding film.

[0031] The high-molecular-weight resin component (elastomer) can contain, for example, at least one resin selected from the group consisting of an acrylate rubber, a polyimide, and a phenoxy resin, and can also contain an acrylate rubber. The high-molecular-weight resin component can have a reactive group such as an epoxy group. The weight-average molecular weight (standard polystyrene conversion value based on the GPC method) of the high-molecular-weight resin component can be 100,000 to 3,000,000. The content of the high-molecular-weight resin component can be 30 to 80 parts by mass relative to 100 parts by mass of the total amount of the die-bonding film.

[0032] The thermosetting adhesive can contain other components as necessary. As the other components, for example, a curing accelerator that promotes the reaction of an epoxy resin with a phenol resin, a coupling agent (for example, a silane coupling agent), and an inorganic filler (for example, silica) can be mentioned.

[0033] The dicing film 5 has the base film 3 and the pressure-sensitive adhesive layer 2 provided on the base film 3. The base film 3 has, for example, a rectangular main surface. The pressure-sensitive adhesive layer 2 has a main surface 2a that is in contact with the base film 3 and a main surface 2b that is in contact with the die-bonding film 1. The main surfaces 2a, 2b of the pressure-sensitive adhesive layer 2 can be circular surfaces that cover the entire main surface of the die-bonding film 1.

[0034] The tensile stress at 20% elongation at 0°C based on the tensile test of the dicing film 5 is 15 MPa or greater. When the tensile stress is 15 MPa or greater, the cooling separation properties of the die bonding film can be improved, particularly in the central portion of the semiconductor wafer. The tensile stress can be 16 MPa or greater or 17 MPa or greater. The upper limit of the tensile stress is not particularly limited, and can be, for example, 30 MPa or less or 25 MPa or less.

[0035] In the present specification, the tensile stress at 20% elongation at 0°C based on the tensile test of the dicing film refers to a value measured in accordance with JIS K 7161-1:2014. More specifically, using a tensile testing machine (for example, Tensilon (manufactured by A&D Manufacturing Company, Limited, RTF-1250-HS-PL)), using the following sample, a tensile test is performed under the measurement conditions to obtain an S-S curve (stress-strain curve). In the obtained S-S curve, the stress value of the base film in the MD direction (flow direction) at 20% elongation can be read, and this is taken as the value of the tensile stress.

[0036] (Measurement conditions) Sample: dumbbell-shaped No. 1 test piece Distance between grips: 40 mm Temperature conditions: 0°C ± 2°C Tensile speed: 300 mm / minute The tensile stress can be increased, for example, by using an ethylene copolymer, an ionic polymer resin, or the like as the main component of the base film. Also, by mixing an inorganic filler or the like in the base film, the tensile stress can be increased.

[0037] The thermal shrinkage at 70°C based on thermal mechanical analysis (TMA) of the dicing film 5 is 5% or less. When the thermal shrinkage is 5% or less, the width of the cut between the semiconductor chips after the die bonding film of the dicing die bonding integrated film is attached to the plurality of semiconductor chips under heating conditions is inhibited from being excessively wide, as a result of which the cooling separation properties of the die bonding film can be improved, particularly in the end portions of the semiconductor wafer. The thermal shrinkage can be 4.5% or less or 4% or less. The lower limit of the thermal shrinkage is not particularly limited, and can be, for example, 1% or more or 2% or more.

[0038] The maximum thermal shrinkage between 80°C and 140°C based on thermal mechanical analysis (TMA) of the dicing film 5 can be 10% or greater. When the maximum thermal shrinkage is 10% or greater, the width of the cut after the heating shrinkage of the dicing film can be further favorably ensured. The maximum thermal shrinkage can be 11% or greater, 12% or greater, or 13% or greater, or can be 40% or less, 35% or less, or 30% or less.

[0039] In the present specification, the heat shrinkage at 70°C and the maximum heat shrinkage between 80 and 140°C of the cut film based on thermal mechanical analysis (TMA) can be obtained, for example, by the following method. First, a measurement sample having a size of 25 mm in length and 4 mm in width is cut out from the cut film. The cutting direction is set so that the MD direction of the cut film becomes 25 mm in length, and the TD direction (Transverse Direction: a direction orthogonal to the MD direction (perpendicular direction)) becomes 4 mm in width. Next, using a thermal mechanical analysis device (for example, TMA7100 manufactured by Hitachi High-Tech Corporation), the heat shrinkage amount of the MD direction of the cut film is measured under the following measurement conditions. The value of the heat shrinkage at 70°C and the maximum value of the heat shrinkage between 80 and 140°C are read, and by dividing the length of the initial measurement sample measured by the thermal mechanical analysis device, the respective heat shrinkage rates can be obtained.

[0040] (Measurement conditions) Distance between clamps: 10 mm (width 4 mm) Load: 0 mN Temperature range: 30 to 180°C Temperature increasing rate: 5°C / minute The heat shrinkage at 70°C can be reduced, for example, by using polyethylene, polypropylene, or the like as a component of the base film. Also, by mixing a polyamide resin or the like in the base film, the heat shrinkage rate can be reduced. Furthermore, by reducing the take-up tension at the time of producing the base film, the heat shrinkage rate can also be reduced.

[0041] The maximum heat shrinkage between 80 and 140°C can be increased, for example, by using an ethylene copolymer, an ionic polymer resin, or the like as a main component of the base film. Also, by increasing the take-up tension at the time of producing the base film, the maximum heat shrinkage rate can also be increased.

[0042] The pressure-sensitive adhesive layer 2 can be a layer formed of a pressure-sensitive adhesive generally used in cut films. The pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer 2 can be an ultraviolet-curable pressure-sensitive adhesive or a non-ultraviolet-curable pressure-sensitive adhesive. The ultraviolet-curable pressure-sensitive adhesive is a pressure-sensitive adhesive having a property that the adhesiveness is reduced by ultraviolet irradiation. By using an ultraviolet-curable pressure-sensitive adhesive, for example, before picking up the semiconductor chip to which the die bonding film piece is attached, the adhesion of the pressure-sensitive adhesive layer 2 can be reduced by ultraviolet irradiation.

[0043] The ultraviolet-curable pressure-sensitive adhesive may, for example, contain an acrylic resin having a (meth)acryl group. The acrylic resin may, for example, have a hydroxyl group. The acrylic resin is a polymer containing a (meth)acrylic ester as a monomer unit. The ultraviolet-curable pressure-sensitive adhesive may, as necessary, further contain a photopolymerization initiator, a crosslinking agent (e.g., a polyisocyanate compound), and other components. The crosslinking agent is a compound having a reactive group that reacts with the acrylic resin. As the crosslinking agent, for example, a polyisocyanate compound can be mentioned.

[0044] The thickness of the pressure-sensitive adhesive layer 2 may, for example, be 20 μm or less. The thickness of the pressure-sensitive adhesive layer 2 may, for example, be 18 μm or less, 16 μm or less, 14 μm or less, 12 μm or less, or 10 μm or less, and also be 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more.

[0045] The above-described tensile stress and the above-described heat shrinkage of the cutting film 5 have a tendency to depend on the base film 3. Therefore, in a method for manufacturing a semiconductor device including the steps of attaching the die-bonding film of the cutting-die-bonding integrated film to a plurality of semiconductor chips under heating conditions, and singulating the die-bonding film by expanding the cutting film under cooling conditions to produce semiconductor chips with pieces of the die-bonding film, the base film 3 can be appropriately selected from base films constituting generally used cutting-die-bonding integrated films, so that the above-described tensile stress and the above-described heat shrinkage are within a prescribed range.

[0046] As the resin constituting the base film 3, there can be mentioned a single polymer of an olefin such as ethylene, propylene, butene, hexene, methylpentene, 4-methyl-l-pentene, vinyl acetate, and a copolymer thereof; a polyester such as polyethylene terephthalate, polyethylene naphthalate; an ethylene copolymer such as an ethylene-vinyl acetate copolymer, an ethylene-(meth)acrylic acid copolymer, an ethylene-(meth)acrylic ester copolymer, an ethylene-(meth)acrylic acid-(meth)acrylic ester copolymer; an ionic polymer resin having an ionic crosslinking structure by forming a salt of an acid component with a metal ion (sodium ion, zinc ion, etc.) in a copolymer containing an olefin such as ethylene and (meth)acrylic acid; an engineering plastic such as polycarbonate, polyamide, polyimide, polyether ether ketone, polyether imide, wholly aromatic polyamide, polyphenylene sulfide; aramid (paper); glass; glass cloth; a fluorine-based resin; a chlorine-based resin such as polyvinyl chloride, polyvinylidene chloride; a cellulose-based resin; a silicone-based resin; or a mixture obtained by mixing a plasticizer to these, or a cured product obtained by performing crosslinking by electron beam irradiation, etc. The base film can be composed of one single resin, or can be composed of a mixed resin obtained by mixing two or more kinds of resins. Further, the base film can be a film having a laminated structure obtained by laminating two or more kinds of films. From the viewpoint of controlling the adhesion to the pressure-sensitive adhesive layer 2, the base film can be subjected to a surface roughening treatment such as a matte treatment, a corona treatment, etc. on its surface.

[0047] The base film 3 can be a base film containing at least one resin selected from the group consisting of a polyester, an ethylene copolymer, an ionic polymer resin, and an engineering plastic. By using such a base film as the base film 3 of the die-bonding film 1, there is a tendency that the above-described tensile stress of the cutting film 5 and the above-described heat shrinkage are easily adjusted to a prescribed range. In one embodiment, the base film 3 can be a base film composed of a mixed resin containing an ionic polymer resin and a polyamide resin. The mass ratio of the ionic polymer resin to the polyamide resin (ionic polymer resin / polyamide resin) can be 50 / 50 to 95 / 5.

[0048] The base material film 3 can be produced by film formation using a method known in the art. For example, the resin composition obtained by adding an additive such as an antistatic agent, as necessary, to a resin raw material of the base material and melt-kneading the same can be processed into a film shape using various molding methods such as a T-die cast molding method, a T-die nip molding method, an inflation molding method, an extrusion lamination method, a calender molding method, and the like. Also, in the case where the base material film has a layered structure, the respective layers can be produced by film formation using a method such as a calender molding method, an extrusion method, an inflation molding method, and the like, and the layers can be laminated using a method such as heat lamination or adhesion based on an adhesive. As the adhesive, an adhesive generally used at the time of production of the layered structure can be used. Also, the layered structure can be produced by simultaneously extruding the resin compositions of the respective layers using a Co-Extrusion lamination method. Also, in order to stabilize the winding at the time of production of the base material film 3 and prevent blocking after film formation, an embossing treatment based on an embossing roll or the like can be applied to the side opposite to the side of the base material film in contact with the pressure-sensitive adhesive layer.

[0049] The thickness of the base material film 3 can be, for example, 20 to 200 μm. If the thickness of the base material film 3 is 20 μm or more, sufficient process resistance can be ensured, and if the thickness of the base material film 3 is 200 μm or less, it is economically advantageous. The thickness of the base material film 3 can be 25 μm or more or 30 μm or more, or can be 150 μm or less or 100 μm or less.

[0050] The shape of the base material film 3 can have a rectangular main surface, but is not limited thereto. The base material film 3 can be a long-size film, and for example, a plurality of pressure-sensitive adhesive layers 2 can be arranged on one long-size base material film 3.

[0051] The cut-die-bonding integrated film of the present application can be appropriately used in a method for manufacturing a semiconductor device including the steps of: attaching the die-bonding film of the cut-die-bonding integrated film to a plurality of semiconductor chips under heating conditions; and singulating the die-bonding film by expanding the cut film under cooling conditions, to produce semiconductor chips with pieces of the die-bonding film attached thereto.

[0052] [Method for manufacturing semiconductor device] Figure 2 and Figure 3 is a cross-sectional view schematically showing a method for manufacturing a semiconductor device. Figure 2 and Figure 3The manufacturing method of the semiconductor device includes the following steps: (A) attaching a die-bonding film 1 of a dicing die-bonding integrated film 10 to a plurality of semiconductor chips C obtained by singulating a semiconductor wafer under a heating condition, the dicing die-bonding integrated film 10 including a dicing film 5 having a base film 3 and a pressure-sensitive adhesive layer 2 provided on the base film 3, and the die-bonding film 1 provided on the pressure-sensitive adhesive layer 2; and (B) manufacturing a semiconductor chip 30 with a die-bonding film piece by singulating the die-bonding film 1 by expanding the dicing film 5 under a cooling condition, the semiconductor chip 30 with a die-bonding film piece having the semiconductor chip C and the die-bonding film piece 1a obtained by singulating the die-bonding film 1. The manufacturing method of the semiconductor device can further include the following steps: (C) picking up the semiconductor chip 30 with a die-bonding film piece from the pressure-sensitive adhesive layer 2; and (D) mounting the picked-up semiconductor chip 30 with a die-bonding film piece on a substrate or another semiconductor chip.

[0053] The semiconductor chip C is formed by singulating a semiconductor wafer. The semiconductor wafer can be a silicon wafer, and the semiconductor chip C can be a silicon chip. The semiconductor chip C has a main surface F1 and a main surface F2, for example, the main surface F1 can be a circuit surface (a surface), and the main surface F2 can be a back surface opposite to the circuit surface.

[0054] The thickness of the semiconductor wafer can be, for example, 50 to 3000 μm, 100 to 2000 μm, or 200 to 1500 μm.

[0055] The method of singulating the semiconductor wafer can be a stealth dicing method such as a SDBG (Stealth Dicing Before Grinding) method or a half-cutting method such as a DBG (Dicing Before Grinding) method.

[0056] The stealth dicing method can be, for example, a method including the following steps: attaching a protective tape (back grinding tape) on the circuit surface of the semiconductor wafer; forming a modified region inside the semiconductor wafer by irradiation of laser; and cutting the semiconductor wafer from the back surface side by grinding, taking the modified region as a division starting point.

[0057] The half-cutting method can be, for example, a method including the following steps: forming a groove on the surface of the semiconductor wafer by a dicing blade; attaching a protective tape (back grinding tape) on the circuit surface of the semiconductor wafer; and grinding from the back surface side of the semiconductor wafer to the groove.

[0058] By such a method of singulating the semiconductor wafer, a laminate 20 (refer to FIG. 2) having the protective tape 7 (back grinding tape) and the plurality of semiconductor chips C provided on the protective tape 7 can be obtained. Figure 2(a). In the laminate 20, the semiconductor chips C are arranged on the protective tape 7 at intervals of the cut width kw1.

[0059] The thickness of the semiconductor chip C is smaller than the thickness of the semiconductor wafer, and can be, for example, 10 to 200 μm. The thickness of the semiconductor chip C can be 15 μm or more or 20 μm or more, and can be 150 μm or less, 100 μm or less, or 50 μm or less.

[0060] Next, in a direction in which the die-bonding film 1 of the cut-die-bonding integrated film 10 is in contact with the main surface F2 of the semiconductor chip C, the die-bonding film 1 is attached to the semiconductor chip C under a heating condition (refer to Figure 2 (a). The temperature of the heating condition can be, for example, 60 to 80°C. Further, the cut ring DR is attached to the main surface 2b on the die-bonding film 1 side of the pressure-sensitive adhesive layer 2 in a manner of surrounding the plurality of semiconductor chips C (refer to Figure 2 (b). In addition, the protective tape 7 is peeled from the semiconductor chip C at an appropriate timing.

[0061] In this way, a laminate 40 having the cut-die-bonding integrated film 10 and the plurality of semiconductor chips C arranged on the die-bonding film 1 of the cut-die-bonding integrated film 10 can be obtained. The laminate 40 can have the cut ring DR on the main surface 2b on the die-bonding film 1 side of the pressure-sensitive adhesive layer 2. In the laminate 40, the semiconductor chips C are arranged on the die-bonding film 1 at intervals of a cut width kw2. Generally, the cut width kw2 has a tendency to be larger than the cut width kw1, but if the cut width kw2 is excessively larger than the cut width kw1, the tendency of the cooling division of the die-bonding film 1 having an extremely thin thickness (for example, 20 μm or less) decreases.

[0062] Next, under a cooling condition, a region inside the cut ring DR of the cut-die-bonding integrated film 10 is pushed up using the ring Ra, whereby the cut-die-bonding integrated film 10 is expanded (refer to Figure 2 (c). The temperature of the cooling condition can be, for example, -15 to 0°C. By expanding the cut-die-bonding integrated film 10, the die-bonding film 1 is divided. By this division, the semiconductor chip 30 having the semiconductor chip C and the die-bonding film piece 1a obtained by singulating the die-bonding film 1 is formed on the pressure-sensitive adhesive layer 2.

[0063] After the ring Ra is removed, a region between the cut ring DR of the cut-die-bonding integrated film 10 and the semiconductor chip 30 having the die-bonding film piece (refer to Figure 3 (a) is heated by the heater H. By the thermal contraction of the cut-die-bonding integrated film 10 of the heated portion, the cut width of the semiconductor chip 30 having the die-bonding film piece tends to further expand.

[0064] In a case where the pressure-sensitive adhesive layer 2 is a layer formed of a pressure-sensitive adhesive of the ultraviolet-curing type, the adhesion of the pressure-sensitive adhesive layer 2 can be reduced by ultraviolet irradiation. After reducing the adhesion of the pressure-sensitive adhesive layer 2, each of the semiconductor chips 30 to which the die bonding film pieces are attached, which is pushed up by the push-up jig 42, is picked up by the suction chuck 44 (refer to Figure 3 (b).

[0065] The picked-up semiconductor chips 30 to which the die bonding film pieces are attached are mounted on a substrate or other semiconductor chips. By stacking a plurality of semiconductor chips, for example, a 3D NAND flash memory can be manufactured.

[0066] Embodiment Hereinafter, the present application will be further specifically described according to embodiments, but the present application is not limited to these embodiments. In addition, unless specifically described, reagents (commercial products) were used as medicines.

[0067] Example 1 1. Synthesis of acrylic resin (production example 1-1) As monomers constituting monomer units, 2-ethylhexyl acrylate (EHA), 2-hydroxyethyl acrylate (HEA), and methyl methacrylate (MMA) were prepared. These monomers were mixed at a copolymerization ratio of EHA / HEA / MMA = 78 parts by mass / 21 parts by mass / 1 part by mass, and an ethyl acetate was used as a solvent and azobisisobutyronitrile (AIBN) 0.08 parts by mass was used as an initiator, and an acrylic resin was obtained by solution radical polymerization.

[0068] Next, as a polymerization inhibitor, hydroquinone monomethyl ether 0.05 parts by mass was used, and 2-isocyanatoethyl methacrylate (product name: Karenz MOI, manufactured by Resonac Holdings Corporation, molecular weight: 155.2) 16 parts by mass was reacted with the obtained acrylic resin, thereby obtaining an ultraviolet reactive acrylic resin having a carbon-carbon double bond (acrylic resin of Production Example 1-1). The acrylic resin of Production Example 1-1 can be an acrylic resin having a (meth)acryloyl group and a hydroxyl group. The weight average molecular weight of the acrylic resin of Production Example 1-1 was measured by GPC (standard polystyrene conversion value). For the GPC measurement, SD-8022 / DP-8020 / RI-8020 manufactured by TOSOH CORPORATION was used. As the column, Gelpack GL-A150-S / GL-A160-S of Resonac Holdings Corporation was used. As the eluent, tetrahydrofuran was used. The weight average molecular weight of the acrylic resin of Production Example 1-1 was 350,000. The hydroxyl value and the acid value of the acrylic resin of Production Example 1-1 were 37.6 mgKOH / g and 6.5 mgKOH / g, respectively, which were measured according to the method described in JIS K 0070:1992.

[0069] 2. Synthesis of an ultraviolet-curable pressure-sensitive adhesive (Production Example 2-1) For 100 parts by mass of the solid content of the acrylic resin of Production Example 1-1, 2.0 parts by mass of an α-hydroxyalkyl phenone-based photopolymerization initiator (product name: Omnirad 184, manufactured by IGM Resins B.V.), 0.4 parts by mass of an acylphosphine oxide-based photopolymerization initiator (product name: Omnirad 819, manufactured by IGM Resins B.V.), and a polyisocyanate crosslinking agent (product name: Coronate L-45E, manufactured by Tosoh Corporation) as a crosslinking agent were mixed at a ratio of 4.1 parts by mass of the solid content of TDI (toluene diisocyanate), and a solution of the ultraviolet-curable pressure-sensitive adhesive of Production Example 2-1 was prepared by dilution and stirring with ethyl acetate.

[0070] 3. Production of a base film An ionomer resin (Zn 2+Ion-induced degree of neutralization: 60 mol%, melting point: 86°C, MFR (melt mass flow rate): 1 g / 10 min (190°C / 2.16 kg load), density: 0.96 g / cm 3 ) in a manner that the mass ratio becomes ion polymer resin / polyamide resin = 90 / 10, and adjusting to a thickness of 70 μm by an extruder, thereby obtaining a base film. 3 ) in a manner that the mass ratio becomes ion polymer resin / polyamide resin = 90 / 10, and adjusting to a thickness of 70 μm by an extruder, thereby obtaining a base film.

[0071] 4. Production of a dicing film On a polyethylene terephthalate film (thickness: 38 μm) on which a release treatment was performed on one side, a solution of the ultraviolet-curable pressure-sensitive adhesive of Production Example 2-1 was applied so that the thickness after drying became 10 μm, and dried at 80°C for 3 minutes, thereby producing a pressure-sensitive adhesive layer on the polyethylene terephthalate film. Thereafter, the base film produced above on which a corona discharge treatment was performed on one side was attached to the pressure-sensitive adhesive layer. The attached laminate was subjected to an aging treatment in a constant-temperature bath at 23°C for 96 hours, thereby obtaining a dicing film having a base film and a pressure-sensitive adhesive layer provided on the base film.

[0072] 5. Production of a die-bonding film A mixture containing the following components and cyclohexanone was stirred and then kneaded using a bead mill for 90 minutes.

[0073] • Epoxy resin (product name: N500P-10, DIC Corporation, cresol novolac type epoxy resin, epoxy equivalent: 200, molecular weight: 980, softening point: 85°C): 55 parts by mass • Phenol resin (product name: MEH-7800M, manufactured by MEIWAKA SEI., LTD. (UBE Corporation), hydroxyl equivalent: 175): 45 parts by mass • Silane coupling agent A (product name: NUC A-189, manufactured by Nippon Unicar Co. Ltd. (ENEOS NUC Corporation), γ-mercaptopropyltrimethoxysilane): 1.7 parts by mass • Silane coupling agent B (product name: NUC A-1160, manufactured by Nippon Unicar Co. Ltd. (ENEOS NUC Corporation), γ-ureidopropyltriethoxysilane): 0.2 parts by mass • Filler (product name: AEROSIL R972, manufactured by NIPPON AEROSIL CO., LTD., silicon dioxide, average particle diameter 0.016 μm): 32 parts by mass In addition, "AEROSIL R972" is a silicon dioxide particle having an organic group (for example, methyl) on the surface.

[0074] The following ingredients were added to the mixture after kneading, and the mixture was further stirred. Thereafter, a grain bonding film-forming varnish was obtained by vacuum degassing.

[0075] • Acrylate rubber having an epoxy group (product name: HTR-860P-3, manufactured by Nagase Chemtex Corporation, content of glycidyl acrylate or glycidyl methacrylate: 3 mass%, weight average molecular weight: 800,000): 280 parts by mass • Curing accelerator (product name: Curezol 2PZ-CN, "Curezol" is a registered trademark, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole): 0.5 parts by mass As a carrier film, a polyethylene terephthalate film having a release surface (thickness: 38 μm) was prepared. The grain bonding film-forming varnish was applied to the release surface of the carrier film, and the coated film was heat-dried at 140°C for 5 minutes. Thus, a laminated film having the carrier film and the grain bonding film (adhesive layer having a thickness of 10 μm) in a B-stage state formed thereon was obtained.

[0076] 6. Production of cut grain bonding integrated film The laminated film having the grain bonding film was cut into a circular shape (diameter: 312 mm). The cut film was obtained by peeling the polyethylene terephthalate film from the cut film with the pressure-sensitive adhesive layer in contact with the grain bonding film, with the circular grain bonding film attached to the release surface. The obtained laminated film was left to stand at room temperature (25°C) for 1 day. Thereafter, the cut film was cut on the outer side of the portion adhered to the grain bonding film, and a cut grain bonding integrated film of Example 1 having a circular grain bonding film and a circular cut film (diameter: 370 mm) covering the grain bonding film and having a portion overflowing from the grain bonding film was obtained. By the same operation, a plurality of cut grain bonding integrated films of Example 1 for various evaluation tests described later were produced.

[0077] Example 2 A plurality of cut grain bonding integrated films of Example 2 were produced by the same steps as in Example 1, except that the thickness of the base film was changed from 70 μm to 80 μm.

[0078] Example 3 As a substrate film, in addition to using the following substrate film, several grain-jointing integral films of Example 3 were produced by following the same steps as in Example 1.

[0079] An ionomer resin (Zn) with a mass ratio of ethylene / methacrylic acid / isopropyl 2-methacrylate = 80 / 10 / 10. 2+ Degree of neutralization due to ions: 60 mol%, Melting point: 86℃, MFR (Melting Flow Rate): 1 g / 10 min (190℃ / 2.16 kg load), Density: 0.96 g / cm³ 3 In the mixture, polyamide resin (nylon 6, melting point: 225℃, density: 1.13g / cm³) is added in a mass ratio of ionomer resin / polyamide resin = 90 / 10. 3 Mixed resin A was obtained. Next, with the total amount of mixed resin A set to 100 parts by mass, no more than 30 parts by mass of an antistatic agent was added to mixed resin A, thereby obtaining mixed resin B. The mixture was then adjusted using an extruder so that the thickness ratio of the layer composed of mixed resin A / the layer composed of mixed resin B = 65 / 15, and the total thickness of the layers composed of mixed resin A and mixed resin B was 80 μm, thus obtaining a substrate film. Furthermore, a pressure-sensitive adhesive layer was formed on the layer composed of mixed resin A of the substrate film.

[0080] Example 4 Except for the following modifications, multiple grain-jointed integral films of Example 4 were fabricated using the same steps as in Example 1.

[0081] (1) The acrylic resin of Manufacturing Example 1-1 was changed to the acrylic resin of Manufacturing Example 1-2 with the composition shown in Table 1. In addition, the acrylic resin of Manufacturing Example 1-2 was synthesized by the same steps as the acrylic resin of Manufacturing Example 1-1, except that the composition was changed to that shown in Table 1.

[0082] (2) The UV-curable pressure-sensitive adhesive of Manufacturing Example 2-1 was changed to the UV-curable pressure-sensitive adhesive of Manufacturing Example 2-2 with the composition shown in Table 2. In addition, the UV-curable pressure-sensitive adhesive of Manufacturing Example 2-2 was synthesized by the same steps as the UV-curable pressure-sensitive adhesive of Manufacturing Example 2-1, except that the composition was changed to that shown in Table 2.

[0083] (3) The thickness of the pressure-sensitive adhesive layer was changed from 10 μm to 8 μm.

[0084] (4) Change the substrate film with a mass ratio of ionomer resin / polyamide resin = 90 / 10 to a substrate film with a mass ratio of ionomer resin / polyamide resin = 80 / 20.

[0085] Example 5 Except for changing the thickness of the base film from 70 μm to 80 μm, a plurality of the cut grain bonded integrated films of Example 5 were produced by the same procedure as Example 4.

[0086] Example 6 Except for changing the thickness of the base film from 70 μm to 90 μm, a plurality of the cut grain bonded integrated films of Example 6 were produced by the same procedure as Example 4.

[0087] Comparative Example 1 Except for changing the thickness of the base film from 70 μm to 90 μm, a plurality of the cut grain bonded integrated films of Comparative Example 1 were produced by the same procedure as Example 1.

[0088] Comparative Example 2 Except for changing the base film of mass ratio of ionomer resin / polyamide resin = 90 / 10 to a base film of mass ratio of ionomer resin / polyamide resin = 100 / 0, i.e., a base film consisting of ionomer resin, a plurality of the cut grain bonded integrated films of Comparative Example 2 were produced by the same procedure as Comparative Example 1.

[0089] Comparative Example 3 Except for the following changes, a plurality of the cut grain bonded integrated films of Comparative Example 3 were produced by the same procedure as Comparative Example 2.

[0090] (1) The acrylic resin of Production Example 1-1 was changed to the acrylic resin of Production Example 1-2 having the composition shown in Table 1.

[0091] (2) The ultraviolet-curable pressure-sensitive adhesive of Production Example 2-1 was changed to the ultraviolet-curable pressure-sensitive adhesive of Production Example 2-2 having the composition shown in Table 2.

[0092] (3) The thickness of the pressure-sensitive adhesive layer was changed from 10 μm to 8 μm.

[0093] Comparative Example 4 Except for the following changes, a plurality of the cut grain bonded integrated films of Comparative Example 4 were produced by the same procedure as Example 1.

[0094] (1) The acrylic resin of Production Example 1-1 was changed to the acrylic resin of Production Example 1-3 having the composition shown in Table 1. In addition, the acrylic resin of Production Example 1-3 was synthesized by the same procedure as the acrylic resin of Production Example 1-1 except for changing to the composition shown in Table 1.

[0095] (2) The ultraviolet-curable pressure-sensitive adhesive of Production Example 2-1 was changed to the ultraviolet-curable pressure-sensitive adhesive of Production Example 2-3 having the composition shown in Table 2. In addition, the ultraviolet-curable pressure-sensitive adhesive of Production Example 2-3 was synthesized by the same steps as the ultraviolet-curable pressure-sensitive adhesive of Production Example 2-1 except that the composition shown in Table 2 was changed.

[0096] (3) The base film having a mass ratio of ionomer resin / polyamide resin = 90 / 10 and a thickness of 70 μm was changed to a multi-layer base film obtained by adjusting the thickness ratio to ethylene-methacrylic acid copolymer / vinyl acetate polymer / ethylene-methacrylic acid copolymer = 1 / 8 / 1 and the thickness to 80 μm by an extruder.

[0097] Comparative Example 5 A plurality of cut grain-bonded integral films of Comparative Example 5 were produced by the same steps as Comparative Example 4 except that the base film having a thickness ratio of ethylene-methacrylic acid copolymer / vinyl acetate polymer / ethylene-methacrylic acid copolymer = 1 / 8 / 1 was changed to a multi-layer base film obtained by adjusting the thickness ratio to polypropylene / vinyl acetate polymer / polypropylene = 1 / 8 / 1 and then the thickness to 100 μm by an extruder.

[0098] [Table 1]

[0099] [Table 2]

[0100] Evaluation (1) Evaluation of properties of cut film (1-1) Measurement of tensile stress at 20% elongation at 0°C based on tensile test With respect to each cut film of the cut grain-bonded integral film of Examples 1 to 6 and Comparative Examples 1 to 5, a tensile test was performed under the measurement conditions using the following sample in accordance with JIS K7161-1:2014 using Tensilon (manufactured by A&D Manufacturing Company, Limited, RTF-1250-HS-PL), and an S-S curve (stress-strain curve) was obtained. In the obtained S-S curve, the stress value of the MD direction (flow direction) of the base film (base film) at an elongation of 20% was read, and this was taken as the value of the tensile stress. The results are shown in Tables 3 and 4.

[0101] (Measurement conditions) Sample: dumbbell-shaped No. 1 test piece Distance between grips: 40 mm Temperature condition: 0°C ± 2°C Stretching speed: 300 mm / minute (1-2) Measurement of thermal shrinkage at 70°C based on thermal mechanical analysis and maximum thermal shrinkage between 80 and 140°C based on thermal mechanical analysis For each cut film of the cut-grain bonded integrated film of Examples 1 to 6 and Comparative Examples 1 to 5, a measurement sample having a size of 25 mm in length and 4 mm in width was cut out. The cutting direction was set so that the MD direction (flow direction) of the cut film became 25 mm in length and the TD direction (perpendicular direction) became 4 mm in width. Next, using a thermal mechanical analysis device (manufactured by Hitachi High-Tech Corporation, TMA7100), the thermal shrinkage amount of the MD direction of the cut film was measured for the measurement sample under the following measurement conditions. The value of the thermal shrinkage at 70°C and the maximum value of the thermal shrinkage between 80 and 140°C were each read, and by dividing by the length of the initial measurement sample measured with the thermal mechanical analysis device, the respective thermal shrinkage rates were calculated. The results are shown in Tables 3 and 4.

[0102] (Measurement conditions) Distance between chucks: 10 mm (width 4 mm) Load: 0 mN Temperature range: 30 to 180°C Temperature increasing speed: 5°C / minute (2) Evaluation of processability (2-1) Production of sample for evaluation of processability A sample for evaluation of processability was produced according to the following steps. A protective tape was attached to the surface of a silicon wafer (diameter: 12 inches, thickness: 775 μm). Thereafter, singulation of the silicon wafer was performed by stealth dicing of the silicon wafer. That is, a modified region was formed inside the silicon wafer by irradiating laser light to the face (back face) of the silicon wafer on the side opposite to the side on which the protective tape was attached under the following conditions.

[0103] (Stealth dicing conditions) • Stealth dicing device: DFL7361 (manufactured by DISCO Corporation) • Laser oscillator type: semiconductor laser excitation Q-switch solid-state laser • Wavelength: 1342 nm • Frequency: 60 kHz • Output: 0.8 W • Number of paths: 2 • Chip size: 3 mm x 12 mm • Cutting speed: 800 mm / second Next, the side of the silicon wafer opposite the protective tape was ground (polished) to a thickness of 30 μm using a lapping / polishing device (DGP8761, manufactured by DISCO Corporation) and the silicon wafer was singulated to obtain a silicon chip. The die-bonding film of the diced die-bonding integrated film of Examples 1 to 6 and Comparative Examples 1 to 5 was attached to the side of the silicon chip opposite the protective tape under the following attachment conditions. At this time, the attachment direction was adjusted so that the direction of the scribe line of the silicon chip was along the MD and TD directions of the base film of the diced die-bonding integrated film. Furthermore, the pressure-sensitive adhesive layer that had overflowed from the die-bonding film was attached to the dicing ring, and then the protective tape was peeled from the silicon wafer.

[0104] (Attachment Conditions) • Attachment device: DFM2800 (manufactured by DISCO Corporation) • Attachment temperature: 65°C • Attachment speed: 10 mm / s • Attachment tension level: Level 7 Next, the diced film of the diced die-bonding integrated film was stretched by cooling expansion under the following cooling expansion conditions using a chip dicing machine (DDS2300, manufactured by DISCO Corporation), whereby the die-bonding film was singulated. Subsequently, the diced film was shrunk by heating under the following heating conditions (heat shrinkage).

[0105] (Cooling Expansion Conditions) • Cooling temperature: 0°C • Cooling time: 120 seconds • Push-up amount: 8 mm • Push-up speed: 120 mm / second • Holding time after push-up: 10 seconds (Heating Conditions) • Heater temperature: 250°C • Heater rotation speed: 10° / second • Push-up amount: 8 mm • Cooling waiting time: 10 seconds After the diced film was shrunk, the pressure-sensitive adhesive layer was irradiated with ultraviolet rays under the following conditions, whereby the adhesion of the pressure-sensitive adhesive layer was reduced.

[0106] (Ultraviolet Irradiation Conditions) • Intensity of ultraviolet rays: 100 mW / cm 2 • Irradiation amount of ultraviolet rays: 150 mJ / cm 2 (2-2) Evaluation (a) Measurement of cut width after attachment In the "Production of a sample for process evaluation (2-1)", the cut width (width of the lattice-shaped gap) formed between adjacent chips was measured by microscope observation for a sample after the dicing die-bonding film was attached to the silicon chip. Figure 5 is a plan view showing the measurement site in the measurement of the cut width after attachment of the example, Figure 5 (a) is a plan view showing the measurement site of the end portion of the semiconductor wafer, Figure 5 (b) is a plan view showing the measurement site of the central portion of the semiconductor wafer. As for the cut width of the end portion of the semiconductor wafer, the cut width in the MD direction was measured at 12 points indicated by black circles in Figure 5 (a), and the average value was found from the data of the 12 points. As for the cut width of the central portion of the semiconductor wafer, the cut width in the MD direction was measured at 5 points indicated by black circles in Figure 5 (b), and the average value was found from the data of the 5 points. The results are shown in Tables 3 and 4.

[0107] (b) Evaluation of splitability In the "Production of a sample for process evaluation (2-1)", the splitability was evaluated in accordance with the following criteria based on the number of portions where the die-bonding film was not split after the die-bonding film was split by cooling expansion. In the evaluation of the splitability, the end portion of the semiconductor wafer was set as the region from each of the two ends of the semiconductor wafer in the MD direction to the fifth dicing line, and the central portion of the semiconductor wafer was set as the region other than the end portion of the semiconductor wafer (see Figure 4 ), and the number of portions where the die-bonding film was not split was found in each region. The results are shown in Tables 3 and 4.

[0108] A: 0 B: 1 or more but less than 5 C: 5 or more but less than 10 D: 10 or more (c) Measurement of cut width after heat shrinkage In the "Production of a sample for process evaluation (2-1)", the cut width (width of the lattice-shaped gap) formed between adjacent chips was measured by microscope observation for a sample after the dicing film was shrunk by heating. Figure 6 is a plan view showing the measurement site in the measurement of the cut width after heat shrinkage of the example. As for the cut width of the semiconductor wafer, the cut width in the MD direction and the cut width in the TD direction were measured at 9 points indicated by black circles in Figure 6 , and the average value was found from the data of the 18 points, and the cut width was evaluated in accordance with the following criteria to be well ensured. The results are shown in Tables 3 and 4.

[0109] A: 30 μm or more B: 20 μm or more and less than 30 μm C: less than 20 μm [Table 3]

[0110] [Table 4]

[0111] As shown in Table 3 and Table 4, in the dicing grain bonded all-in-one films of Comparative Examples 1 to 3 in which the thermal shrinkage of the dicing film at 70°C exceeds 5%, the separation of the grain bonded film at the end portion of the silicon wafer was insufficient. Also, in the dicing grain bonded all-in-one films of Comparative Examples 4 and 5 in which the tensile stress of the dicing film at 0°C is less than 15 MPa, the separation of the grain bonded film at the central portion of the silicon wafer was insufficient. In contrast, it was confirmed that the separation of the grain bonded film of the dicing grain bonded all-in-one films of Examples 1 to 6 in which the thermal shrinkage of the dicing film at 70°C is 5% or less and the tensile stress of the dicing film at 0°C is 15 MPa or more was improved. Furthermore, it was also confirmed that the maximum thermal shrinkage of the dicing film between 80°C and 140°C of the dicing grain bonded all-in-one film was 10% or more, and the width of the cut after the thermal shrinkage of the dicing film was favorably ensured.

[0112] From the above, it was confirmed that, according to the present application, in the prescribed method for manufacturing a semiconductor device, the cooling separation of a grain bonded film having a thickness of 20 μm or less can be improved.

[0113] Explanation of Symbols 1 - grain bonded film, 1a - grain bonded film sheet, 2 - pressure-sensitive adhesive layer, 3 - base film, 5 - dicing film, 7 - protective tape, 10 - dicing grain bonded all-in-one film, 30 - semiconductor chip to which a grain bonded film sheet is attached, C - semiconductor chip.

Claims

1. A method for manufacturing a semiconductor device, comprising the following steps: (A) Under heating conditions, a die bonding film of a die-cutting and bonding integrated film is attached to multiple semiconductor chips obtained by monolithizing a semiconductor wafer. The die-cutting and bonding integrated film comprises: a dicing film having a substrate film and a pressure-sensitive adhesive layer disposed on the substrate film; and the die bonding film disposed on the pressure-sensitive adhesive layer; and (B) A semiconductor chip with a die bonding film is fabricated by monolithizing the die bonding film by expanding the dicing film under cooling conditions, the semiconductor chip having the semiconductor chip and the die bonding film obtained by monolithizing the die bonding film. The thickness of the grain bonding film is less than 20 μm. The tensile stress of the cut film at 20% elongation at 0°C, based on a tensile test, is greater than 15 MPa, and the thermal shrinkage rate at 70°C, based on thermomechanical analysis, is less than 5%.

2. The method for manufacturing a semiconductor device according to claim 1, wherein, The maximum thermal shrinkage rate of the cut film between 80 and 140°C, based on thermomechanical analysis, is more than 10%.

3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein, In (A), the method for monolithizing the semiconductor wafer is either stealth dicing or half-dicing.

4. A single-layer cut grain bonding membrane, comprising: A cutting film, comprising a substrate film and a pressure-sensitive adhesive layer disposed on the substrate film; and A grain bonding film is disposed on the pressure-sensitive adhesive layer. The thickness of the grain bonding film is less than 20 μm. The tensile stress of the cut film at 20% elongation at 0°C, based on a tensile test, is greater than 15 MPa, and the thermal shrinkage rate at 70°C, based on thermomechanical analysis, is less than 5%.

5. The integrally formed film for grain cutting and bonding according to claim 4, wherein, The maximum thermal shrinkage rate of the cut film between 80 and 140°C, based on thermomechanical analysis, is more than 10%.

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