Integrated uniform flow gas phase shower head, forming process and semiconductor thin film deposition apparatus

Abstract

The application relates to an integrated uniform flow gas-phase shower head, a forming process and a semiconductor thin film deposition device, wherein the shower head comprises: an integrally formed shower body, a first side of the shower body is arranged as an air inlet side, a second side is arranged as an air outlet side, a first array hole and a second array hole which are longitudinally and transversely staggered in a grid shape and are interconnected to form a gas diffusion layer are arranged in the interior of the shower body close to the air outlet side, a plurality of air outlet transition grooves which are arranged in an array are arranged in the gas diffusion layer, and each air outlet transition groove is provided with an air outlet hole which is in communication and penetrates the air outlet side; and an air inlet flow channel group which comprises an air inlet channel, a first air guide channel, a uniform air ring groove and a second air guide channel which are sequentially communicated. The application can make the gas more quickly and uniformly diffuse to the whole gas diffusion layer, and then, in cooperation with the uniformly distributed air outlet holes, can make the gas mixture sprayed from the air outlet holes more uniformly act on the wafer.

Description

Technical Field

[0001] This invention relates to the field of chemical vapor deposition technology, and in particular to an integrated uniform flow vapor phase spray head, forming process, and semiconductor thin film deposition equipment. Background Technology

[0002] Semiconductor products are often manufactured by vapor phase growth technology to form the required film or crystal structure on semiconductor materials. During vapor phase growth, one or more gas mixtures involved in the reaction are uniformly delivered into the process chamber through a gas spray head. The gas mixture acts on the wafer surface and reacts under high temperature to deposit a thin film on the wafer surface.

[0003] Existing gas spray heads typically include a body, an exhaust plate, and an inlet. An air chamber is formed within the body, the inlet is located at the top of the body and connected to the air chamber, and the exhaust plate is located at the bottom of the body, with numerous exhaust holes. The gas mixture disperses within the air chamber and is then ejected from the exhaust holes. However, because the gas mixture is at a high temperature, and the process chamber is also a high-temperature environment, and the exhaust plate is thin and has exhaust holes, prolonged exposure to high temperatures can cause slight deformation of the exhaust plate, which in turn causes deformation of the exhaust holes. This results in uneven ejection of the gas mixture from the exhaust holes into the process chamber, thus affecting the uniformity of thin film deposition. Summary of the Invention

[0004] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide an integrated uniform gas phase spray head, forming process and semiconductor thin film deposition equipment, which has the advantage of improving gas diffusion uniformity.

[0005] The first aspect of the present invention discloses an integrated uniform flow gas phase spray head, comprising:

[0006] A one-piece molded spray body, wherein a first side of the spray body is designated as an air inlet side and a second side as an air outlet side, wherein the spray body has a first array of holes and a second array of holes arranged in a grid pattern and interconnected to form a gas diffusion layer, wherein the gas diffusion layer has a plurality of air outlet transition grooves arranged in an array, and each air outlet transition groove is connected to an air outlet hole that penetrates the air outlet side; and,

[0007] An inlet flow channel assembly is used to guide the gas mixture from the gas supply equipment to the gas diffusion layer;

[0008] The air intake channel assembly includes: an air intake channel penetrating the air intake side, a uniform air ring groove disposed in the spray body, a plurality of first air guide channels connecting the air intake channel and the uniform air ring groove, and a plurality of second air guide channels connecting the uniform air ring groove and the gas diffusion layer, wherein the distance between the outlet end of the second air guide channel and the center of the outlet side is 2 / 5 to 3 / 5 of the radius of the outlet side.

[0009] To achieve the above technical solution, during chemical vapor deposition, the gas mixture enters the spray body through the inlet channel, disperses and diffuses into the uniform gas ring groove after passing through the first gas guide channel, and impacts the inner wall of the uniform gas ring groove after being ejected from the first gas guide channel. Subsequently, the gas mixture diffuses to both sides along the uniform gas ring groove, ensuring that the gas mixture is uniformly dispersed within the uniform gas ring groove. This results in a relatively equal gas flow rate for the gas mixture entering each of the second gas guide channels. When flowing through the inlet end of the second gas guide channel, the gas mixture is injected into the gas diffusion layer and diffuses there. Since the gas diffusion layer is formed by the interconnection of the crisscrossing first and second array holes, the gas mixture can diffuse along a shorter path and... This allows for the formation of a greater number of gas outlet transition grooves, resulting in more uniform gas outlet holes. Simultaneously, since the gas outlet end of the second gas guide channel is located at 2 / 5 to 3 / 5 of the gas outlet radius, the gas mixture can diffuse simultaneously to the center and outer sides of the gas diffusion layer. This enables the gas to diffuse more quickly and evenly throughout the entire gas diffusion layer. Combined with the uniformly distributed gas outlet holes, the gas mixture, after being ejected from the outlet holes, can act more evenly on the wafer, resulting in a more uniform final deposited film. Furthermore, because the spray body is an integral structure, it will not easily deform even under prolonged high temperatures during use, thus providing a structural basis for gas dispersion stability and effectively extending the service life of the spray head.

[0010] As a preferred embodiment of the invention, the outlet ends of a plurality of first air guiding channels are evenly distributed on the side of the uniform air ring groove near the air inlet side, and the inlet ends of a plurality of second air guiding channels are evenly distributed on the side of the uniform air ring groove near the air outlet side, with the inlet end of each second air guiding channel corresponding to the middle part between the outlet ends of two adjacent first air guiding channels.

[0011] The above technical solution ensures that the amount of gas in the gas mixture is relatively uniform when it diffuses in the uniform gas ring groove and then enters each of the second gas guiding channels, thereby further improving the uniformity of gas diffusion.

[0012] As a preferred embodiment of the invention, the end of the air intake channel is provided with a diffusion section, the diffusion section including: an arc-shaped diffusion port that expands outward from the air intake channel, and an arc-shaped diverter groove that is connected to the arc-shaped diffusion port and has its opening facing the air intake channel, the air intake end of the first air guide channel being connected to the arc-shaped diverter groove.

[0013] To achieve the above technical solution, after the gas mixture flows out of the inlet channel, it first diffuses outward along the arc-shaped diffuser, and then flows through the arc-shaped diversion groove to each of the first gas guide channels, thereby making the gas mixture diffuse more evenly.

[0014] As a preferred embodiment of the invention, an airflow acceleration port is provided between the uniform air ring groove and the first air guiding channel and / or between the uniform air ring groove and the second air guiding channel. The airflow acceleration port includes a contraction section, a narrowing section and an expansion section connected in sequence. The cross-sectional size of the airflow acceleration port gradually decreases from the contraction section to the narrowing section and gradually increases from the narrowing section to the expansion section.

[0015] To achieve the above technical solution, when the airflow passes through the airflow acceleration port, the size of its flow cross-section changes. When passing through the contraction section, according to the principle of mass conservation, ρ×A×V=constant. Due to the reduction in cross-section, the flow velocity will increase accordingly to maintain mass conservation. In the contraction section, the flow velocity remains balanced. When passing through the expansion section, due to the faster airflow velocity, it will expand rapidly in the expansion section, causing the density of the gas mixture to decrease significantly. This effect will exceed the effect of the increased cross-section, so the gas flow velocity will further increase. Increasing the flow velocity of the gas mixture through the airflow acceleration port allows the gas to diffuse more rapidly in the uniform gas ring groove or gas diffusion layer, further improving the uniformity of gas diffusion.

[0016] As a preferred embodiment of the invention, the second air guide channel is configured to be perpendicular to the air outlet side.

[0017] The above technical solution ensures that the airflow ejected from the second air guide channel does not graze to one side, further improving the uniformity of gas diffusion.

[0018] As a preferred embodiment of the invention, both the first array hole and the second array hole penetrate the spray body, and a sealing ring is also sealed to the outside of the gas diffusion layer on the spray body. The sealing ring is used to seal the first array hole and the second array hole.

[0019] The above technical solution enables the first and second array holes to be formed by simpler drilling and milling, reducing processing difficulty and cost. The operation of sealing the first and second array holes with the encapsulation ring is also simpler and more convenient.

[0020] As a preferred embodiment of the invention, an outer connecting ring groove is further provided between the encapsulation ring and the spray body, and the outer connecting ring groove connects each of the first array holes and the second array holes.

[0021] By implementing the above technical solution, the gas mixture can also diffuse and connect outside the first and second array holes through the external connecting annular groove, thereby further improving the uniformity of gas diffusion.

[0022] As a preferred embodiment of the invention, the vent hole includes a vent channel and a vent flare connected in sequence. The vent channel is connected to the vent transition groove. The vent flare is an outwardly expanding conical hole. After the gas mixture is ejected through the adjacent vent flares, it crosses and mixes with each other on the flow path.

[0023] The above technical solution enables the vent to function similarly to an airflow acceleration port. After the gas mixture is ejected from the vent, it can further diffuse outward. Through cross-mixing, the gas mixture can diffuse more evenly within the process chamber.

[0024] The second aspect of the present invention discloses a process for molding an integrated uniform flow gas phase spray head as described in the first aspect, comprising:

[0025] A first substrate and a second substrate are pre-formed and matched with each other. After the first substrate and the second substrate are relatively fitted together, a spray body is formed. The bottom of the first substrate is set as the air outlet side, and the top of the second substrate is set as the air inlet side.

[0026] A first array of holes and a second array of holes are drilled in a grid pattern and interconnected in a direction parallel to the gas outlet side on the side near the first substrate to form a gas diffusion layer. The gas diffusion layer has a plurality of gas outlet transition grooves distributed in an array.

[0027] An array of air outlet holes are drilled on the air outlet side of the first substrate and connected to the air outlet transition groove. After a ring-shaped uniform gas groove is opened at the bottom of the first substrate, several second gas guiding channels connected to the gas diffusion layer are evenly opened to form a first intermediate body. The distance between the air outlet end of the second gas guiding channel and the center of the air outlet side is controlled to be 2 / 5 to 3 / 5 of the radius of the air outlet side.

[0028] An air intake channel extending to the middle of the air intake side of the second base is opened, and a first air guide channel inclined and extending to the bottom end of the air intake channel is opened at the bottom of the second base to form a second intermediate body, wherein the end of the first air guide channel can be connected to the uniform air ring groove.

[0029] The first intermediate body and the second intermediate body are joined together and welded to form a spray body, and the ends of the first array hole and the second array hole are sealed.

[0030] According to a third aspect of the present invention, a semiconductor thin film deposition apparatus is provided, including an integrated uniform flow vapor phase spray head as described in the first aspect, wherein the outlet of the integrated uniform flow vapor phase spray head is connected to the process chamber of the semiconductor thin film deposition apparatus.

[0031] As described above, the present invention has the following beneficial effects:

[0032] This invention provides an integrated uniform flow gas phase spray head, a forming process, and a semiconductor thin film deposition equipment. During chemical vapor deposition, a gas mixture enters the spray body through the inlet channel, disperses and diffuses into the uniform flow annular groove after passing through the first gas guide channel. The gas mixture is then ejected from the first gas guide channel and impacts the inner wall of the uniform flow annular groove. Subsequently, the gas mixture diffuses to both sides along the uniform flow annular groove, ensuring uniform dispersion within the groove. This results in a relatively equal flow rate of the gas mixture entering each of the second gas guide channels. When flowing through the inlet end of the second gas guide channel, the gas mixture is injected into the gas diffusion layer and diffuses there. Since the gas diffusion layer is formed by interconnected crisscrossing first and second array holes, the gas mixture can... The gas diffuses along a shorter path and forms a greater number of gas transition grooves, resulting in more uniform gas outlets. Simultaneously, since the gas outlet end of the second gas guide channel is located at 2 / 5 to 3 / 5 of the gas outlet radius, the gas mixture can diffuse simultaneously to the center and outer sides of the gas diffusion layer. This allows the gas to diffuse more quickly and evenly throughout the entire gas diffusion layer. Combined with the evenly distributed gas outlets, the gas mixture, after being ejected from the outlets, can act more evenly on the wafer, resulting in a more uniform final film deposition. Furthermore, because the spray head is an integral structure, it will not easily deform even under prolonged high temperatures during use, thus providing a structural basis for gas dispersion stability and effectively extending the service life of the spray head. Attached Figure Description

[0033] Figure 1 The diagram shown is a structural schematic of the integrated uniform flow gas phase spray head in an embodiment of the present invention.

[0034] Figure 2 The diagram shown is a perspective view of the integrated uniform flow gas phase spray head in an embodiment of the present invention, used to show the arrangement of the gas diffusion layer, the gas outlet channel, and the gas inlet channel assembly.

[0035] Figure 3 The diagram shows the arrangement of the gas diffusion layer in an embodiment of the present invention.

[0036] Figure 4 Displayed as Figure 3 Enlarged view of part A.

[0037] Figure 5 The image shown is a cross-sectional view along the central axis of the integrated uniform flow gas phase spray head in an embodiment of the present invention.

[0038] Figure 6 Displayed as Figure 5 Enlarged view of part B.

[0039] Figure 7 The diagram shown is a schematic representation of the connection structure between the airflow acceleration port and the uniform air ring groove in another embodiment of the present invention.

[0040] Figure 8A A schematic diagram of the gas pressure distribution across the entire outlet side of a prior art vapor phase spray head during deposition is shown.

[0041] Figure 8B This diagram illustrates the gas pressure distribution in the region corresponding to the wafer on the gas outlet side of a prior art vapor phase spray head during deposition.

[0042] Figure 9A This diagram illustrates the gas pressure distribution across the entire outlet side of the integrated uniform flow gas phase spray head during deposition operations, according to an embodiment of the present invention.

[0043] Figure 9B This diagram illustrates the gas pressure distribution in the region corresponding to the wafer on the gas outlet side during deposition work using the integrated uniform flow gas phase spray head according to an embodiment of the present invention.

[0044] Figure 10 The above is a flowchart of the molding process method in an embodiment of the present invention.

[0045] The numbers and letters in the diagram represent the names of the corresponding components:

[0046] 10. Spray body; 11. Inlet side; 12. Outlet side; 13. Gas diffusion layer; 131. First array hole; 132. Second array hole; 133. Outlet transition groove; 14. Outlet hole; 141. Outlet channel; 142. Outlet flare; 15. Sealing ring; 16. External connecting ring groove; 17. Connector section; 20. Inlet airflow channel group; 21. Inlet channel; 22. Uniform airflow ring groove; 23. First airflow guide channel; 24. Second airflow guide channel; 25. Diffusion section; 251. Arc-shaped diffuser; 252. Arc-shaped diversion groove; 26. Airflow acceleration port; 261. Contraction section; 262. Narrowing section; 263. Expansion section. Detailed Implementation

[0047] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

[0048] Please see Figures 1 to 10 It should be understood that the structures, proportions, sizes, etc., illustrated in the accompanying drawings are merely for illustrative purposes to aid those skilled in the art and to facilitate understanding and reading. They are not intended to limit the scope of the invention and therefore have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to size, without affecting the effectiveness and purpose of the invention, should still fall within the scope of the technical content disclosed in this invention. Furthermore, the terms such as "upper," "lower," "left," "right," "middle," and "one" used in this specification are merely for clarity and not intended to limit the scope of the invention. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of the invention's implementation.

[0049] Please see Figures 1 to 10 The first aspect of the present invention provides an integrated uniform flow gas phase spray head, comprising: an integrally formed spray body 10, wherein a first side of the spray body 10 is configured as an air inlet side 11 and a second side is configured as an air outlet side 12, wherein the spray body 10 has a first array hole 131 and a second array hole 132 arranged in a grid pattern and interconnected to form a gas diffusion layer 13, wherein the gas diffusion layer 13 has a plurality of air outlet transition grooves 133 arranged in an array, and each air outlet transition groove 133 is connected to an air outlet hole 14 that penetrates the air outlet side 12; and an air inlet channel assembly 20 for guiding the gas mixture from the gas supply device to the gas diffusion layer 13.

[0050] Specifically, the air intake channel assembly 20 includes: an air intake channel 21 that penetrates the air intake side 11, a uniform air ring groove 22 disposed in the spray body 10, a plurality of first air guide channels 23 that connect the air intake channel 21 and the uniform air ring groove 22, and a plurality of second air guide channels 24 that connect the uniform air ring groove 22 and the gas diffusion layer 13. The distance between the outlet end of the second air guide channel 24 and the center of the outlet side 12 is 2 / 5 to 3 / 5 of the radius of the outlet side 12.

[0051] The spray body 10 can be machined by milling, casting, or other methods. The spray body 10 is generally frustoconical in shape, with a disc-shaped forming section at the bottom to form the gas diffusion layer 13 and the air outlet 14. The bottom of this forming section is the air outlet side 12. At the top of the spray body 10, a connector section 17 is typically formed for easy connection. This connector section 17 is used to install and fix the spray body 10. The side with the connector section 17 is the air inlet side 11. It can be understood that the connector section 17 can be fixed to the gas supply equipment or the installation position of the semiconductor thin film deposition equipment by snap-fit, screw connection, bolt connection, or other methods. In a specific example, multiple evenly distributed threaded holes can be provided on the connector section 17 to allow bolts to be threaded and fixed to the spray body 10. Alternatively, external threads can be provided on the connector section 17 for threading and fixing to internal threads provided on the installation station of the gas supply equipment or semiconductor thin film deposition equipment. In some embodiments, heating holes for inserting heating rods can also be provided on the connector section 17. These heating holes can extend above the gas diffusion layer 13 but are not connected to the gas diffusion layer 13, and the heating holes are not connected to the air inlet channel group 20. By inserting heating rods into the heating holes to heat the spray body 10, the gas mixture can be kept at a high temperature.

[0052] See Figure 3 and Figure 4 The following is a detailed description of the relevant structures on the air outlet side 12: The extension directions of the first array hole 131 and the second array hole 132 are both parallel to the plane of the air outlet side 12 and located in the same plane, i.e., horizontal in the use state. Simultaneously, the first array hole 131 and the second array hole 132 are linearly arrayed, with the same diameter and arranged in a grid-like, crisscrossing pattern. Specifically, the axial direction of the first array hole 131 is perpendicular to the axial direction of the second array hole 132. Figure 3 and Figure 4Taking the coordinate system shown in the figure as an example, the X-axis and Y-axis are perpendicular to each other. The first array aperture 131 is uniformly arranged in multiple rows along the Y-axis direction, and the second array aperture 132 is uniformly arranged in multiple rows along the X-axis direction. Thus, the first array aperture 131 and the second array aperture 132 can be interconnected to form a gas diffusion layer 13, and the gas mixture can diffuse freely within the gas diffusion layer 13. Since the first array aperture 131 and the second array aperture 132 are interleaved, a partition block will be formed between two adjacent first array apertures 131 along the array direction, or between two adjacent second array apertures 132 along the array direction. The gas venting transition grooves 133 are located around the partition block and on either the first array hole 131 or the second array hole 132. Specifically, continuous gas venting transition grooves 133 are formed on both sides of the partition block along the X-axis direction in the extension direction of the first array hole 131, and on both sides of the partition block along the Y-axis direction in the extension direction of the second array hole. This connects the first array hole 131, the second array hole 132, and the two interconnected to form a gas diffusion layer 13. When the gas mixture flows through the gas venting transition grooves 133, a portion can be discharged from the gas vent 14 into the process chamber and act on the wafer surface. In other embodiments, the angle between the axes of the first array hole 131 and the second array hole 132 can be set to any angle between 30° and 150°, i.e., the angle between the X-axis and the Y-axis can be any angle between 30° and 150°, as long as multiple arrayed gas venting transition grooves 133 can be formed.

[0053] Understandably, in existing technologies, a cavity is directly formed in the spray body 10 for the diffusion of spray gas. This results in the outlet side 12 of the spray body 10 forming a thin planar plate with a small thickness and numerous micropores as outlet holes. Under long-term high-temperature conditions, the outlet side 12 is prone to deformation, causing deformation of the micropores and resulting in poor uniformity of gas spraying. In this embodiment, however, a gas diffusion layer 13 replaces the cavity structure to allow the spray gas to diffuse along a plane parallel to the outlet side 12. The entire gas diffusion layer 13 is a solid structure, and the outlet side 12 and the spray body 10 are also designed as an integrated solid structure. This makes the outlet side 12 almost non-deformable, and by changing the air intake structure, the uniformity of gas diffusion can be guaranteed while improving structural strength.

[0054] The air intake channel 21 extends from the top of the connector section 17 to the middle of the spray body 10. In some embodiments, in order to facilitate connection with the air supply equipment, a connecting pipe can also be provided on the connector section 17. The connecting pipe is connected to the air intake channel 21 to introduce the gas mixture into the air intake channel 21. The end position of the air intake channel 21 can be specifically selected according to the size of the spray body 10 and the required inclination angle of the first air guide channel 23.

[0055] In some embodiments, a diffuser section 25 may be provided at the end of the intake channel 21. The diffuser section 25 includes an arc-shaped diffuser opening 251 that expands outward from the intake channel 21, and an arc-shaped diverter groove 252 that is connected to the arc-shaped diffuser opening 251 and has its opening facing the intake channel 21. The intake end of the first air guide channel 23 is connected to the arc-shaped diverter groove 252. It is understood that the opening of the arc-shaped diffuser opening 251 is downward and the opening of the arc-shaped diverter groove 252 is upward, and the arc-shaped diffuser opening 251 and the arc-shaped diverter groove 252 are in a relatively interlocking state. The arc of the arc-shaped diffuser 251 and the arc of the arc-shaped diversion groove 252 can be the same, that is, the two are combined to form a spherical groove, or they can be set differently to reduce the processing difficulty. Usually, in order to facilitate the connection with the first gas guide channel 23, the cross section of the arc-shaped diversion groove 252 is preferably set as semi-circular or close to semi-circular. After the gas mixture flows out of the inlet channel 21, it first diffuses outward along the arc-shaped diffuser 251, and then flows through the arc-shaped diversion groove 252 to each of the first gas guide channels 23, thereby making the gas mixture diffuse more evenly.

[0056] The uniform air groove 22 is disposed inside the spray body 10 and is circular in shape. The axis of the uniform air groove 22 is consistent with the axis of the spray body 10. The cross-section of the uniform air groove 22 can be any shape such as circular, rectangular, polygonal, semi-circular, or arc-shaped. It is preferred to use a circular or rectangular shape. The plane in which the uniform air groove 22 is located is also set to be parallel to the plane of the air outlet side 12, so that the lengths of each first air guide channel 23 or each second air guide channel 24 are the same.

[0057] The first gas guiding channel 23 is usually provided in 3-8 groups, preferably in 4 groups. In order to facilitate the gas flow to the gas equalization ring groove 22, the first gas guiding channel 23 is usually set to be inclined downward. The gas inlet end of the first gas guiding channel 23 is connected to the arc-shaped diversion groove 252, and the gas outlet end is connected to the gas equalization ring groove 22. It can be understood that the first gas guiding channel 23 is evenly distributed around the gas inlet channel 21 so that the gas mixture can be evenly dispersed into each first gas guiding channel 23. In conjunction with the arrangement position of the gas equalization ring groove 22, the gas mixture can also be evenly diffused in the gas equalization ring groove 22.

[0058] The number of second air guide channels 24 is the same as the number of first air guide channels 23, so that the gas mixture can be more evenly distributed into each second air guide channel 24. The angle between the second air guide channel 24 and the plane of the air outlet side 12 is usually set to any angle between 60° and 120°. Preferably, the second air guide channel 24 is set to be perpendicular to the air outlet side 12, so that the airflow ejected from the second air guide channel 24 will not deviate to one side, further improving the uniformity of gas diffusion. The distance between the outlet end of the second gas guide channel 24 and the center of the outlet side 12 is 2 / 5 to 3 / 5 of the radius of the outlet side 12. Preferably, the outlet end of the second gas guide channel 24 is located at 1 / 2 of the radius of the outlet side 12. When the second gas guide channel 24 is set to be perpendicular to the outlet side 12, the center radius of the gas equalization ring groove 22 is 1 / 2 of the radius of the outlet side 12. The inlet end of the second gas guide channel 24 is connected to the bottom of the gas equalization ring groove 22, and the outlet end is connected to the gas diffusion layer 13. When connecting to the gas diffusion layer 13, the second gas guide channel 24 can directly penetrate the top of the first array hole 131 and the second array hole 132. When the gas mixture enters the gas diffusion layer 13 from the second gas guide channel 24, it can quickly diffuse along the path of the first array hole 131 and the second array hole 132. In some embodiments, a funnel-shaped flare can also be provided at the outlet end of the second gas guide channel 24 so that the gas mixture can diffuse in the gas diffusion layer 13.

[0059] Preferably, in some embodiments, the outlet ends of a plurality of first air guide channels 23 are evenly distributed on the side of the gas equalization ring groove 22 near the air inlet side 11, and the inlet ends of a plurality of second air guide channels 24 are evenly distributed on the side of the gas equalization ring groove 22 near the air outlet side 12. The air inlet end of each second air guide channel 24 corresponds to the middle part between the outlet ends of two adjacent first air guide channels 23. Taking the setting of four sets of first air guide channels 23 and four sets of second air guide channels 24 as an example, taking any one of the gas equalization ring grooves 22 as an example... The outlets of the four sets of first gas guiding channels 23 are located at positions 0, 1 / 4, 1 / 2, and 3 / 4 on the upper part of the gas equalization ring groove 22, respectively, while the inlet ends of the four sets of second gas guiding channels 24 are located at positions 1 / 8, 3 / 8, 5 / 8, and 7 / 8 on the bottom of the gas equalization ring groove 22, respectively. This ensures that the amount of gas entering each second gas guiding channel 24 after the gas mixture diffuses in the gas equalization ring groove 22 is relatively equal, further improving the uniformity of gas diffusion.

[0060] In one feasible implementation, an airflow acceleration port 26 is provided between the uniform air ring groove 22 and the first air guiding channel 23 and / or between the uniform air ring groove 22 and the second air guiding channel 24. The airflow acceleration port 26 includes a constriction section 261, a narrowing section 262, and an expansion section 263 connected in sequence. The cross-sectional size of the airflow acceleration port 26 gradually decreases from the constriction section 261 to the narrowing section 262 and gradually increases from the narrowing section 262 to the expansion section 263. Figure 7As shown, Figure 7 This diagram shows the connection of the gas-uniform annular groove 22, the first air-guiding channel 23, and the second air-guiding channel 24 when an airflow acceleration port 26 is provided between the gas-uniform annular groove 22 and the second air-guiding channel 24. It can be understood that... Figure 7 Only the partial outlines of the uniform air ring groove 22, the first air guide channel 23, the second air guide channel 24, and the flow acceleration port are shown, while the outer part of the outlines is the solid part of the spray body 10.

[0061] The contraction section 261 and the expansion section 263 are both arc-shaped and gradually change. The maximum opening size of the contraction section 261 is set to be basically the same as the size of the uniform air ring groove 22, while the maximum opening size of the expansion section 263 is equivalent to the diameter of the second air guiding channel 24. The narrowing section 262 is a straight-through opening to directly connect the contraction section 261 and the expansion section 263. Of course, in some embodiments, the narrowing section 262 can be omitted, and the narrowing section 262 is naturally formed at the connection between the contraction section 261 and the expansion section 263. In other embodiments, the airflow acceleration port 26 can also be provided between the uniform air ring groove 22 and the first air guiding channel 23, or the airflow acceleration port 26 can be provided between the uniform air ring groove 22 and the first air guiding channel 23 and between the uniform air ring groove 22 and the second air guiding channel 24.

[0062] When the airflow passes through the airflow acceleration port 26, the size of its flow cross-section changes. When passing through the contraction section 261, according to the principle of mass conservation, ρ×A×V=constant. Due to the reduction in cross-section, the flow velocity will increase accordingly to maintain mass conservation. In the contraction section 262, the flow velocity remains balanced. When passing through the expansion section 263, due to the faster airflow velocity, it will expand rapidly in the expansion section 263, causing the density of the gas mixture to decrease significantly. This effect will exceed the effect of the increased cross-section, so the gas flow velocity will further increase. The increased flow velocity of the gas mixture through the airflow acceleration port 26 allows the gas to diffuse more rapidly in the uniform gas ring groove 22 or the gas diffusion layer 13, further improving the uniformity of gas diffusion.

[0063] The gas mixture is diffused in the gas diffusion layer 13, i.e., ejected from the gas outlet 14. In a specific example, the gas outlet 14 includes a gas outlet channel 141 and a gas outlet diffuser 142 connected in sequence. The gas outlet channel 141 is connected to the gas outlet transition groove 133. The gas outlet diffuser 142 is an outwardly expanding conical hole. After the gas mixture is ejected from adjacent gas outlet diffusers 142, it cross-mixes with each other on the flow path. It can be understood that the gas mixture first passes through the gas outlet channel 141 for gas concentration and acceleration, and then passes through the gas outlet diffuser 142 for diffusion and acceleration, so that the airflow can diffuse outward along the inner wall of the gas outlet diffuser 142. The airflow ejected from adjacent gas outlets 14 can overlap or interfere with each other on the diffusion path, thereby achieving the effect of cross-mixing.

[0064] With the above-described configuration, the vent 14 can function similarly to the airflow acceleration port 26. After the gas mixture is ejected from the vent 14, it can further diffuse outward, and through cross-mixing, the gas mixture diffuses more evenly within the process chamber. Of course, in some embodiments, the vent 14 can also be directly configured as a through hole.

[0065] Furthermore, in this embodiment, the first array hole 131 and the second array hole 132 are configured to penetrate the spray body 10 along the X-axis and Y-axis directions, respectively. A sealing ring 15 is also sealed and connected to the outside of the gas diffusion layer 13 on the spray body 10. The sealing ring 15 is used to seal the first array hole 131 and the second array hole 132. The sealing ring 15 can be sealed and fixed to the spray body 10 by welding or other means. This allows the first array hole 131 and the second array hole 132 to be formed by simpler drilling and milling, reducing the processing difficulty and processing cost. The operation of sealing the first array hole 131 and the second array hole 132 by the sealing ring 15 is also simpler and more convenient.

[0066] Meanwhile, in some embodiments, an outer connecting groove 16 may be provided between the encapsulation ring 15 and the spray body 10. The outer connecting groove 16 connects each of the first array holes 131 and the second array holes 132. The outer connecting groove 16 may be pre-formed inside the encapsulation ring 15. For example, the cross-section of the encapsulation ring 15 may be set to L-shape, and a welding step may be formed on the spray body 10 outside the gas diffusion layer 13. After the two end faces of the encapsulation ring 15 are welded and fixed to the welding step, the outer connecting groove 16 can be formed between the encapsulation ring 15 and the spray body 10. The height of the outer connecting groove 16 should be greater than or equal to the height of the gas diffusion layer 13. The outer connecting groove 16 enables the gas mixture to diffuse and connect outside the first array holes 131 and the second array holes 132, further improving the uniformity of gas diffusion. In some embodiments, a third gas guiding channel may be provided between the gas equalization ring groove 22 and the outer connecting groove 16, or between the gas equalization ring groove 22 and the outer connecting groove 16, to further improve the uniformity of the gas mixture diffusion to the outside.

[0067] During chemical vapor deposition, the gas mixture enters the spray body 10 through the inlet channel 21, disperses and diffuses into the uniform gas ring groove 22 after passing through the first gas guide channel 23, and impacts the inner wall of the uniform gas ring groove 22 after being ejected from the first gas guide channel 23. Subsequently, the gas mixture diffuses to both sides along the uniform gas ring groove 22, so that the gas mixture can be uniformly dispersed in the uniform gas ring groove 22, making the gas flow rate of the gas mixture entering each of the second gas guide channels 24 relatively equal. When flowing through the inlet end of the second gas guide channel 24, the gas mixture is injected into the gas diffusion layer 13 from the second gas guide channel 24 and diffuses in the gas diffusion layer 13. Since the gas diffusion layer 13 is formed by the interconnection of the crisscrossing first array holes 131 and second array holes 132, the gas mixture can diffuse along a shorter path. Furthermore, it can form a greater number of gas outlet transition grooves 133, which in turn can form more uniform gas outlet holes 14. At the same time, since the gas outlet end of the second gas guide channel 24 is located at 2 / 5 to 3 / 5 of the radius of the gas outlet side 12, the gas mixture can diffuse to the middle and outer sides of the gas diffusion layer 13 simultaneously, allowing the gas to diffuse more quickly and evenly to the entire gas diffusion layer 13. Combined with the uniformly distributed gas outlet holes 14, the gas mixture can be sprayed out from the gas outlet holes 14 and act more evenly on the wafer, making the final deposited film more uniform. At the same time, since the spray body 10 is an integral structure, it will not easily deform even when subjected to long-term high temperature during use, thus providing a structural basis for gas dispersion stability and effectively extending the service life of the spray head.

[0068] like Figure 8A and Figure 8B As shown, Figure 8A This diagram illustrates the gas pressure distribution across the entire outlet side of a prior art vapor phase spray head during deposition. Figure 8B This diagram illustrates the gas pressure distribution in the region corresponding to the wafer on the outlet side of a prior art vapor phase spray head during deposition. The pressure unit is Torr, which has a direct conversion relationship with standard atmospheric pressure in the International System of Units (SI). One standard atmosphere equals 760 Torrs. This prior art is a cavity-type spray head with numerous micropores (0.3 mm in diameter) distributed on the outlet side. The gas mixture enters from the center of the spray head and diffuses within the cavity. Figure 8A In the middle, the outlet pressure range is 14.08-15.12 Torr, and the range difference ΔP is 1.04 Torr. Figure 8B In the process, the pressure range of the wafer region corresponding to the gas outlet side is 14.15-15.06 Torr, and the range difference ΔP is 0.91 Torr. It can be seen that the pressure distribution uniformity is poor and the gas diffusion is uneven in the existing technology.

[0069] Figure 9AThis diagram illustrates the gas pressure distribution across the entire outlet side of the integrated uniform flow gas phase spray head during deposition operations, according to an embodiment of the present invention. Figure 9B This diagram illustrates the gas pressure distribution in the region corresponding to the wafer on the gas outlet side during deposition operations using the integrated uniform flow vapor phase spray head according to an embodiment of the present invention. In this embodiment, the diameter of the gas outlet channel 141 of the gas outlet 14 is 0.3 mm. Figure 9A In the middle, the outlet pressure range is 14.78-15.12 Torr, and the range difference ΔP is 0.34 Torr. Figure 9B In the process, the pressure range of the wafer region corresponding to the gas outlet side is 14.86-15.02 Torr, and the range difference ΔP is 0.16 Torr. It can be seen that the pressure distribution uniformity of the gas phase spray head of the present invention is significantly improved, especially in the region corresponding to the wafer on the gas outlet side, where the uniformity is improved by 0.75 Torr compared with the prior art. Due to the arrangement of the inlet air channel group 20, the gas diffusion layer 13 and the gas outlet hole 14, the gas mixture is uniformly distributed with high gas pressure in most areas of the middle of the gas outlet side 12. Since the middle part of the spray head is the main part that acts on the wafer, the deposited film can be made more uniform.

[0070] A second aspect of this invention provides a process for molding an integrated uniform gas phase spray head as described in the first aspect, such as... Figure 10 As shown, it includes:

[0071] S100, a first substrate and a second substrate that are pre-formed and matched with each other, the first substrate and the second substrate are matched to form a spray body 10, and the bottom of the first substrate is set as the air outlet side 12, and the top of the second substrate is set as the air inlet side 11.

[0072] Both the first substrate and the second substrate can be integrally formed by milling or casting. Corresponding positioning holes are usually provided on both the first substrate and the second substrate. The positioning holes are used to insert positioning pins so that the first substrate and the second substrate can be positioned and assembled. The positioning holes can also serve as reference points for subsequent processing.

[0073] S200. A first array hole 131 and a second array hole 132, which are interwoven in a grid pattern and connected to each other, are drilled on the side near the gas outlet side 12 of the first substrate in a direction parallel to the gas outlet side 12 to form a gas diffusion layer 13. The gas diffusion layer 13 has a plurality of gas outlet transition grooves 133 distributed in an array.

[0074] When processing the first array hole 131 and the second array hole 132, drilling can be performed using a pre-configured die. The die includes multiple drill bits arranged side by side, so multiple first array holes 131 / second array holes 132 can be processed in one operation. During processing, the first substrate is clamped on the machine tool, and the die drills the first array hole 131 on the first substrate in a direction parallel to the gas outlet side 12. After all the first array holes 131 are processed, the machine tool fixture is rotated 90°, and the second array hole 132 is drilled through the die. At this time, the first array holes 131 and the second array holes 132 can form a grid-like crisscrossing and interconnected state, that is, a gas diffusion layer 13 is formed. Since the first array holes 131 and the second array holes 132 are interspersed, a partition block will be formed between each pair, and the gas outlet transition groove 133 is located around the partition block and on the first array hole 131 or the second array hole 132.

[0075] S300. An array of air outlet holes 14 are drilled on the air outlet side 12 of the first substrate and connected to the air outlet transition groove 133. After opening an annular uniform gas groove 22 at the bottom of the first substrate, several second gas guiding channels 24 connected to the gas diffusion layer 13 are uniformly opened to form the first intermediate body. The distance between the air outlet end of the second gas guiding channel 24 and the center of the air outlet side 12 is controlled to be 2 / 5 to 3 / 5 of the radius of the air outlet side 12.

[0076] When machining the vent hole 14, the vent side 12 of the first substrate is used as the reference machining plane. The CNC machine tool can obtain the position of each vent transition groove 133 corresponding to the vent side 12 by using the pre-set machining parameters of the first array hole 131 and the second array hole 132. The drill bit can drill into the vent side 12 to a predetermined depth to form the vent hole 14 connected to the gas diffusion layer 13.

[0077] When machining the uniform gas ring groove 22, the machining position of the uniform gas ring groove 22 is determined according to the size parameters of the gas outlet side 12 and the preset size parameters of the uniform gas ring groove 22. The central axis of the first substrate is used as the machining reference center. The tool can machine the uniform gas ring groove 22 with the central axis as a circle. For ease of machining, it is preferable to machine the cross section of the uniform gas ring groove 22 into a rectangle. If it is necessary to machine the uniform gas ring groove 22 into a circle, it is necessary to first open a first ring groove with a semi-circular cross section on the upper surface of the first substrate, and then open a second ring groove with a semi-circular cross section on the lower surface of the second substrate. After the first substrate and the second substrate are joined together, a uniform gas ring groove 22 with a circular cross section can be formed.

[0078] After the gas equalization ring groove 22 is formed, the processing position, processing direction and processing depth of the second gas guiding channel 24 are determined within the gas equalization ring groove 22. The second gas guiding channel 24 is preferably set perpendicular to the gas outlet side 12. The processing tool drills into the gas equalization ring groove 22 to a predetermined depth along the direction perpendicular to the gas outlet side 12, thereby forming the second gas guiding channel 24 that connects to the gas diffusion layer 13. The second gas guiding channel 24 is preferably set in 4 groups. The distance between the gas outlet end of the second gas guiding channel 24 and the center of the gas outlet side 12 is 2 / 5 to 3 / 5 of the radius of the gas outlet side 12. Preferably, the gas outlet end of the second gas guiding channel 24 is located at 1 / 2 of the radius of the gas outlet side 12. When the second gas guiding channel 24 is set perpendicular to the gas outlet side 12, the center radius of the gas equalization ring groove 22 is 1 / 2 of the radius of the gas outlet side 12.

[0079] In some embodiments, the method further includes step S301, forming an airflow acceleration port 26 between the uniform air ring groove 22 and the second air guide channel 24. The airflow acceleration port 26 includes a constriction section 261, a narrowing section 262, and an expansion section 263 connected in sequence. The cross-sectional size of the airflow acceleration port 26 gradually decreases from the constriction section 261 to the narrowing section 262 and gradually increases from the narrowing section 262 to the expansion section 263. Both the constriction section 261 and the expansion section 263 are arc-shaped gradients. The airflow acceleration port 26 can be a pre-formed single component. During processing, an assembly step adapted to the single component is milled between the second air guide channel 24 and the uniform air ring groove 22. After the single component is embedded in the assembly step, it is fixed in the second air guide channel 24 and the uniform air ring groove 22 by welding, thereby realizing the acceleration of the airflow.

[0080] S400, an air intake channel 21 extending to the middle of the air intake side 11 of the second base is opened, and a first air guide channel 23 inclined and extending to the bottom end of the air intake channel 21 is opened at the bottom of the second base to form a second intermediate body, wherein the end of the first air guide channel 23 can be connected to the uniform air ring groove 22.

[0081] The machining depth of the intake channel 21 is determined according to the predetermined inclination angle of the first channel. Machining the first air guide channel 23 only requires drilling at the predetermined inclination angle. It should be noted that, in a preferred embodiment, the outlet ends of several first air guide channels 23 are evenly distributed on the side of the air distribution ring groove 22 near the intake side 11, and the inlet ends of several second air guide channels 24 are evenly distributed on the side of the air distribution ring groove 22 near the outlet side 12. The inlet end of each second air guide channel 24 corresponds to the middle portion between the outlet ends of two adjacent first air guide channels 23, thus setting... Taking the four sets of first air guide channels 23 and the four sets of second air guide channels 24 as examples, with any position on the uniform air ring groove 22 as position 0, the air outlets of the four sets of first air guide channels 23 are located at positions 0, 1 / 4, 1 / 2 and 3 / 4 on the upper part of the uniform air ring groove 22, respectively, while the air inlets of the four sets of second air guide channels 24 are located at positions 1 / 8, 3 / 8, 5 / 8 and 7 / 8 on the bottom of the uniform air ring groove 22, respectively. Thus, during processing, the processing position of the first air guide channel 23 on the second substrate can be determined according to the positional relationship between the second air guide channel 24 and the positioning hole.

[0082] In some embodiments, the method further includes step S401: before forming the first air guide channel 23, a diffuser section 25 is formed at the end of the air intake channel 21. The diffuser section 25 includes: an arc-shaped diffuser opening 251 that expands outward from the air intake channel 21, and an arc-shaped diverter groove 252 that is connected to the arc-shaped diffuser opening 251 and has its opening facing the air intake channel 21. The air intake end of the first air guide channel 23 is connected to the arc-shaped diverter groove 252. It can be understood that the opening of the arc-shaped diffuser opening 251 is downward and the opening of the arc-shaped diverter groove 252 is downward. Above, the arc-shaped diffuser 251 and the arc-shaped diverter 252 are in a relatively interlocking state. The arc of the arc-shaped diffuser 251 and the arc of the arc-shaped diverter 252 can be the same, that is, the two are combined to form a spherical groove, or they can be set differently to reduce the processing difficulty. Usually, in order to facilitate communication with the first air guide channel 23, the cross section of the arc-shaped diverter 252 is preferably set as semi-circular or close to semi-circular. During processing, the boring tool can be inserted into the air intake channel 21, and the diffuser section 25 can be processed by controlling the feed of the boring tool.

[0083] S500, the first intermediate body and the second intermediate body are joined together and welded to form the spray body 10, and the ends of the first array hole 131 and the second array hole 132 are sealed.

[0084] When assembling the first intermediate body and the second intermediate body, positioning pins can be inserted into the positioning holes first. The positioning pins are used to position and assemble the first intermediate body and the second intermediate body. After the first intermediate body and the second intermediate body are mated and fit together tightly, they are then welded to form a stable integrated structure. Finally, appropriate surface treatment can be performed.

[0085] The end sealing of the first array hole 131 and the second array hole 132 can be achieved by welding the ends of the first array hole 131 and the second array hole 132, or by setting a sealing ring 15 that is adapted to the bottom of the spray body 10. The sealing ring 15 is a pre-processed single part. The sealing ring 15 is located outside the gas diffusion layer 13 and is welded and fixed to the spray body 10 to seal the first array hole 131 and the second array hole 132. In a preferred embodiment, an outer connecting ring groove 16 is also reserved between the sealing ring 15 and the spray body 10. The outer connecting ring groove 16 connects each of the first array holes 131 and the second array hole 132. Specifically, the encapsulation ring 15 has an L-shaped cross-section, and a welding step is formed on the spray body 10 outside the gas diffusion layer 13. After the two ends of the encapsulation ring 15 are welded and fixed to the welding step, an outer connecting ring groove 16 is formed between the encapsulation ring 15 and the spray body 10. The height of the outer connecting ring groove 16 should be greater than or equal to the height of the gas diffusion layer 13. The outer connecting ring groove 16 enables the gas mixture to diffuse and connect outside the first array hole 131 and the second array hole 132, further improving the uniformity of gas diffusion.

[0086] A third aspect of this invention discloses a semiconductor thin film deposition apparatus, including an integrated uniform flow vapor phase spray head as described in the first aspect. The outlet 14 of the integrated uniform flow vapor phase spray head is connected to the process chamber of the semiconductor thin film deposition apparatus. It is understood that a heating plate is disposed at the bottom of the process chamber, and the wafer is placed on the heating plate for heating. The integrated uniform flow vapor phase spray head is located directly above the heating plate, so that when the gas mixture is ejected from the outlet 14, it can directly act on the wafer surface.

[0087] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. An integrated uniform flow gas phase spray head, characterized in that, include: A one-piece molded spray body, wherein a first side of the spray body is designated as an air inlet side and a second side as an air outlet side, wherein the spray body has a first array of holes and a second array of holes arranged in a grid pattern and interconnected to form a gas diffusion layer, wherein the gas diffusion layer has a plurality of air outlet transition grooves arranged in an array, and each air outlet transition groove is connected to an air outlet hole that penetrates the air outlet side; and, An inlet flow channel assembly is used to guide the gas mixture from the gas supply equipment to the gas diffusion layer; Wherein, the extension directions of the first array hole and the second array hole are parallel to the air outlet side surface and are located in the same plane. The first array hole and the second array hole are intersected and connected to each other, and a partition block is formed between two adjacent first array holes or two adjacent second array holes. The air outlet transition groove is located around the partition block and on the first array hole or the second array hole. The air outlet transition groove is continuously arranged along the extension direction of the first array hole or the second array hole. The air intake channel assembly includes: an air intake channel penetrating the air intake side, a uniform air ring groove disposed in the spray body, a plurality of first air guide channels connecting the air intake channel and the uniform air ring groove, and a plurality of second air guide channels connecting the uniform air ring groove and the gas diffusion layer, wherein the distance between the outlet end of the second air guide channel and the center of the outlet side is 2 / 5 to 3 / 5 of the radius of the outlet side.

2. The integrated uniform flow gas phase spray head according to claim 1, characterized in that, The outlet ends of several first air guide channels are evenly distributed on the side of the uniform air ring groove near the air inlet side, and the inlet ends of several second air guide channels are evenly distributed on the side of the uniform air ring groove near the air outlet side. The inlet end of each second air guide channel corresponds to the middle part between the outlet ends of two adjacent first air guide channels.

3. The integrated uniform flow gas phase spray head according to claim 1 or 2, characterized in that, The air intake channel is provided with a diffusion section at its end. The diffusion section includes an arc-shaped diffusion port that expands outward from the air intake channel and an arc-shaped diverter groove that is connected to the arc-shaped diffusion port and has its opening facing the air intake channel. The air intake end of the first air guide channel is connected to the arc-shaped diverter groove.

4. The integrated uniform flow gas phase spray head according to claim 3, characterized in that, An airflow acceleration port is provided between the uniform air ring groove and the first air guiding channel and / or between the uniform air ring groove and the second air guiding channel. The airflow acceleration port includes a contraction section, a narrowing section and an expansion section connected in sequence. The cross-sectional size of the airflow acceleration port gradually decreases from the contraction section to the narrowing section and gradually increases from the narrowing section to the expansion section.

5. The integrated uniform flow gas phase spray head according to claim 1, characterized in that, The second air guide channel is configured to be perpendicular to the air outlet side.

6. The integrated uniform flow gas phase spray head according to claim 1, characterized in that, Both the first array hole and the second array hole penetrate the spray body, and a sealing ring is also sealed to the outside of the gas diffusion layer on the spray body. The sealing ring is used to seal the first array hole and the second array hole.

7. The integrated uniform flow gas phase spray head according to claim 6, characterized in that, An outer connecting ring groove is also provided between the encapsulation ring and the spray body, and the outer connecting ring groove connects each of the first array hole and the second array hole.

8. The integrated uniform flow gas phase spray head according to claim 1, characterized in that, The vent includes a vent channel and a vent diffuser connected in sequence. The vent channel is connected to the vent transition groove. The vent diffuser is a tapered hole that expands outward. The gas mixture is injected through adjacent vent diffusers and then crosses and mixes with each other on the flow path.

9. A process for forming an integrated uniform flow gas phase spray head as described in any one of claims 1-8, characterized in that, include: A first substrate and a second substrate are pre-formed and matched with each other. After the first substrate and the second substrate are relatively fitted together, a spray body is formed. The bottom of the first substrate is set as the air outlet side, and the top of the second substrate is set as the air inlet side. A first array of holes and a second array of holes are drilled in a grid pattern and interconnected in a direction parallel to the gas outlet side on the side near the first substrate to form a gas diffusion layer. The gas diffusion layer has a plurality of gas outlet transition grooves distributed in an array. An array of air outlet holes are drilled on the air outlet side of the first substrate and connected to the air outlet transition groove. After a ring-shaped uniform gas groove is opened at the bottom of the first substrate, several second gas guiding channels connected to the gas diffusion layer are evenly opened to form a first intermediate body. The distance between the air outlet end of the second gas guiding channel and the center of the air outlet side is controlled to be 2 / 5 to 3 / 5 of the radius of the air outlet side. An air intake channel extending to the middle of the air intake side of the second base is opened, and a first air guide channel inclined and extending to the bottom end of the air intake channel is opened at the bottom of the second base to form a second intermediate body, wherein the end of the first air guide channel can be connected to the uniform air ring groove. The first intermediate body and the second intermediate body are joined together and welded to form a spray body, and the ends of the first array hole and the second array hole are sealed.

10. A semiconductor thin film deposition apparatus, characterized in that, Includes an integrated uniform flow vapor phase spray head as described in any one of claims 1-8, wherein the outlet of the integrated uniform flow vapor phase spray head is connected to the process chamber of a semiconductor thin film deposition apparatus.

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