A dual gate transfer valve for a semiconductor processing etching apparatus

Abstract

The utility model provides a kind of double door transmission valve of semiconductor processing etching equipment, belong to semiconductor transmission valve technical field, to solve the tiny dust generated by the friction of sealing element and contact surface, long time use is easy to cause dust particle accumulation on the sealed contact surface, can accelerate wear and tear, while dust particle can float into the cavity or transmission channel of valve body, pollute semiconductor piece surface, can affect product yield problem, the invention includes main valve and the drive seat installed in the middle below main valve, the invention can utilize the double measures of directional blowing and directional suction, can greatly reduce particle residue, reduce pollution from the source of particle generation, guarantee the effect of dust removal, improve semiconductor product yield, while nitrogen of inert gas can be cleaned in the inner surface of the fitting groove, to ensure the neatness and smoothness in the fitting groove, ensure that semiconductor transmission process is always in high vacuum, high-clean environment, guarantee transmission stability and consistency.

Description

Technical Field

[0001] This invention relates to the field of semiconductor transfer valve technology, specifically a dual-gate transfer valve for semiconductor processing etching equipment. Background Technology

[0002] Semiconductor transfer valves are the most widely used vacuum components in silicon wafer transport channels, and are crucial for silicon wafer transport and vacuum assurance in the modern semiconductor industry. During silicon wafer transport, semiconductor transfer valves ensure unobstructed passage, while during the wafer manufacturing process, they maintain the vacuum and cleanliness of the chamber. Furthermore, due to their structural characteristics, semiconductor transfer valves can guarantee both a high vacuum environment and particle size control within that environment, offering significant advantages in the transport process.

[0003] When using current semiconductor transmission valves, the tiny dust particles generated by the friction between the seal and the contact surface when the gate separates from the valve seat will be directly left on the contact surface inside the valve body, forming marks. Over time, dust particles can accumulate on the sealing contact surface, which will accelerate wear. At the same time, dust particles can drift into the valve body cavity or transmission channel, contaminating the surface of semiconductor components, thus directly affecting product yield. In addition, the seal is directly exposed to corrosive gases that may remain in the semiconductor process, such as fluorides and chlorides, which are prone to chemical aging, such as hardening and cracking, leading to a rapid decline in sealing performance. After aging, it is also more likely to release dust particles.

[0004] To address the above issues, a dual-gate transfer valve for semiconductor etching equipment is proposed. Summary of the Invention

[0005] The purpose of this invention is to provide a dual-door transfer valve for semiconductor processing etching equipment. By using this device, the problem of fine dust generated by friction between the seal and the contact surface is solved. Over time, dust particles can accumulate on the sealed contact surface, accelerating wear. At the same time, dust particles can drift into the valve body cavity or the transfer channel, contaminating the surface of the semiconductor components and affecting product yield is addressed.

[0006] To achieve the above objectives, the present invention provides the following technical solution: a dual-door transfer valve for a semiconductor processing etching apparatus, comprising a main valve and a drive seat installed in the middle of the lower part of the main valve, wherein an outer cover plate is fixed on the front and rear sides of the main valve, and a transfer door is opened above the surface of the outer cover plate; a valve plate is installed at the output end of the drive seat, and the valve plate is located in the middle of the inner side of the main valve.

[0007] The valve plate has a bonding mechanism installed on its front and rear surfaces, and a sealing gasket is installed on the outer surface of the bonding mechanism. The inner surface of the outer cover plate has a bonding groove, which is located around the transmission door. The outer surface of the sealing gasket has a connecting hole. A venting mechanism is provided on the outer rear side of the sealing gasket, and the venting mechanism is connected to the sealing gasket. Absorption mechanisms are provided on both sides of the valve plate, and the absorption mechanisms are fixedly connected to the inner sidewall of the main valve. A venting mechanism is installed at the input end of the absorption mechanism, and the venting mechanism is connected to the bonding groove.

[0008] Furthermore, the bonding mechanism includes an intake valve installed on the side surface of the valve plate, and an air passage is provided on the inner surface of the valve plate, and the air passage is connected to the intake valve. A piston plate is slidably installed inside the valve plate, and a bonding valve plate is fixed outside the piston plate.

[0009] Spring 1 is fixed on both sides of the rear surface of the valve plate, and the two ends of spring 1 are fixedly connected to the valve plate and the valve plate respectively.

[0010] Furthermore, an air storage chamber is provided in the middle of the inner side of the valve plate, and an inflation valve pipe is connected to the lower part of the air storage chamber. A solenoid valve is connected to one side of the air storage chamber.

[0011] Furthermore, the piston plate and the valve plate are provided with air guide channels inside, and the air guide channels are connected to the sealing gasket. A contact seat is installed at the rear of the valve plate.

[0012] Furthermore, the venting mechanism includes an vent pipe connected to the rear surface of the sealing gasket, and the sealing gasket is connected to the vent pipe and the air guide channel.

[0013] Furthermore, pressure relief pipes are connected to both sides of the air outlet pipe, and a second spring is installed inside the pressure relief pipe. A valve disc is fixed to one end of the second spring, and the other end of the second spring is fixedly connected to the pressure relief pipe. An installation groove is provided on the outside of the pressure relief pipe.

[0014] Furthermore, the absorption mechanism includes a mounting bracket fixed to the rear of one end of the valve plate, and an embedded block is fixed to the front of one end of the mounting bracket. A piston cylinder is fixedly installed on the inner side wall of the main valve, and a piston rod is slidably installed at the rear end of the piston cylinder.

[0015] Furthermore, a one-way air inlet pipe is connected to the upper side of the piston cylinder, and the front end of the one-way air inlet pipe is connected to an air distribution pipe. A dust filter screen is fixed inside the upper part of the piston cylinder.

[0016] Furthermore, the ventilation mechanism includes an air intake pipe connected to the air distribution pipe, and the front end of the air intake pipe is provided with an air intake port, which is disposed through the inner surface of the fitting groove. Several sets of air intake pipes and air intake ports are provided in the fitting groove, and a diameter reduction ring is fixed in the middle of the inner side of the air intake pipe.

[0017] Furthermore, a one-way air outlet pipe is connected to the upper side of the piston cylinder, and the front end of the one-way air outlet pipe is connected to a dust collection chamber.

[0018] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0019] 1. This invention can be vertically moved to the closed position without contacting the valve body, minimizing seal wear and reducing the cost of the sealing gasket during the lifespan of the main valve. Utilizing nitrogen pressure to assist sealing fills tiny gaps in the sealing surface, reducing the risk of leakage and effectively ensuring the high vacuum environment required for semiconductor transmission. Simultaneously, it creates a blowing effect on the inner surface of the bonding groove and the surface of the sealing gasket, separating tiny particles adsorbed on these surfaces, such as impurities remaining during the sealing process. Combined with subsequent directional air intake, impurities can be removed, preventing particles from entering the transmission channel and contaminating semiconductor devices, thus contributing to a clean working environment for the main valve.

[0020] 2. This invention can avoid the problem of excessive expansion of the sealing gasket, which can easily cause damage. At the same time, the nitrogen gas discharged from the pressure relief mechanism can flow to the surface of the sealing gasket and fill the sealed main valve, thereby allowing the nitrogen gas to form an inert protection in the main valve, further reducing the possibility of oxidation and corrosion of the internal components of the main valve, thus improving the performance and life of the main valve.

[0021] 3. This invention can significantly reduce particle residue by using both directional blowing and directional suction, thereby reducing pollution at the source of particle generation, ensuring dust removal effectiveness, improving semiconductor product yield, and allowing inert nitrogen gas to clean the inner surface of the bonding tank, thus ensuring the cleanliness and smoothness of the bonding tank and ensuring that the semiconductor transmission process is always in a high vacuum and high cleanliness environment, ensuring transmission stability and consistency. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the overall external three-dimensional structure of the present invention;

[0023] Figure 2 This is a three-dimensional structural diagram of the valve plate inside the main valve of the present invention;

[0024] Figure 3 This is a cross-sectional perspective view of the valve plate of the present invention.

[0025] Figure 4 This is a cross-sectional perspective view of the piston plate of the present invention.

[0026] Figure 5 For the present invention Figure 4 Enlarged structural diagram at point A in the middle;

[0027] Figure 6 For the present invention Figure 3 Enlarged structural diagram at point B;

[0028] Figure 7 This is a cross-sectional three-dimensional structural diagram of the piston cylinder of the present invention;

[0029] Figure 8 For the present invention Figure 7 Enlarged structural diagram at point C;

[0030] Figure 9 This is a schematic diagram of the separation structure of the suction tube and the bonding groove of the present invention;

[0031] Figure 10 This is a cross-sectional three-dimensional structural diagram of the intake tube of the present invention.

[0032] In the diagram: 1. Main valve; 2. Drive seat; 3. Outer cover plate; 4. Transmission door; 5. Valve plate; 6. Fitting mechanism; 61. Inlet valve; 62. Vent duct; 63. Piston plate; 64. Fitting valve plate; 65. Spring 1; 66. Air storage chamber; 67. Inflation valve pipe; 68. Solenoid valve; 69. Air guide duct; 610. Contact seat; 7. Sealing gasket; 8. Venting mechanism; 81. Air outlet pipe; 82. Pressure relief pipe; 83. Spring 2; 84. Valve disc; 85. Mounting groove; 9. Absorption mechanism; 91. Mounting bracket; 92. Embedded block; 93. Piston cylinder; 94. Piston rod; 95. One-way air inlet pipe; 96. Air distribution pipe; 97. Dust filter; 98. One-way air outlet pipe; 99. Dust collection chamber; 10. Ventilation mechanism; 101. Suction pipe; 102. Suction port; 103. Reduction ring; 20. Connecting hole; 30. Fitting groove. Detailed Implementation

[0033] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0034] To address the issue of fine dust generated by friction between the seal and the contact surface, prolonged use can lead to dust particle accumulation on the sealing surface, accelerating wear. Simultaneously, dust particles can drift into the valve body cavity or transmission channel, contaminating the surface of semiconductor components and impacting product yield. Figures 1-9 As shown, the following preferred technical solutions are provided:

[0035] A dual-door transfer valve for a semiconductor processing etching apparatus includes a main valve 1 and a drive seat 2 installed in the lower middle part of the main valve 1. The drive seat 2 is pneumatically driven and can drive the plate inside the main valve 1 to move up and down. The front and rear sides of the main valve 1 are fixed with outer cover plates 3, and a transfer door 4 is opened on the surface of the outer cover plate 3. The transfer door 4 on the front and rear outer cover plates 3 is connected to the main valve 1, so that the main valve 1 can be used for the transfer of semiconductor components. A valve plate 5 is installed at the output end of the drive seat 2, and the valve plate 5 is located in the middle of the inner side of the main valve 1. When the semiconductor component is transferred, the valve plate 5 descends to the lower inside of the main valve 1 to ensure the transfer of the transfer door 4. When the transfer of the semiconductor component is completed, the drive seat 2 pushes the valve plate 5 up to seal the transfer door 4.

[0036] A bonding mechanism 6 is installed on the front and rear surfaces of the valve plate 5, and a sealing gasket 7 is installed on the outer surface of the bonding mechanism 6. When the semiconductor component transfer is completed, and when the drive seat 2 pushes the valve plate 5 up to seal the transfer door 4, the valve plate 5 will drive the bonding mechanism 6 to move together inside the main valve 1. The valve plate 5, bonding mechanism 6, and sealing gasket 7 do not contact the inner wall of the main valve 1 or the outer cover plate 3. After the valve plate 5 rises to its position, under the control of the controller, air will be injected into the interior of both sides of the valve plate 5. Under the action of air pressure, the bonding machine will... The outer side of the bonding plate and the sealing gasket 7 move horizontally outward from the valve plate 5, so that the bonding plate can fit and block the transmission door 4 opened on the outer cover plate 3. During the fitting, the sealing gasket 7 is used to seal the transmission door 4 after the fitting, thereby completing the T-shaped movement of the transmission door 4. The movement is more gentle, and the valve plate 5 and the sealing gasket 7 do not contact the inner wall of the main valve 1 and the outer cover plate 3 when they move upward. They move vertically to the closed position without contacting the valve body, minimizing the wear of the seal and reducing the cost of the sealing gasket 7 during the service life of the main valve 1.

[0037] The inner surface of the outer cover plate 3 is provided with a bonding groove 30, and the bonding groove 30 is located on the periphery of the transmission door 4. When the bonding plate on the outside of the bonding mechanism 6 and the sealing gasket 7 move horizontally to seal, the sealing gasket 7 will be embedded into the bonding groove 30 to form an embedded sealing structure, which increases the sealing contact area and improves the sealing effect. At the same time, after the bonding plate on the outside of the bonding mechanism 6 is pushed horizontally forward into place, it will trigger the gas storage component in the valve plate 5 to ventilate. Under the control of the controller, the nitrogen stored in the gas storage component will be filled into the hollow structure sealing gasket 7 through the channel, so that the sealing gasket 7 can expand and fit better into the bonding groove 30 after being filled with gas. The pressure of nitrogen is used to assist the sealing, further filling the small gaps on the sealing surface, reducing the risk of leakage, and effectively ensuring the high vacuum environment required for semiconductor transmission.

[0038] The outer surface of the sealing gasket 7 has a connecting hole 20. When the sealing gasket 7 is sealed to the mating groove 30, the connecting hole 20 automatically seals to the surface of the mating groove 30, thus preventing gas leakage when nitrogen is filled into the sealing gasket 7. When the transfer door 4 is opened, the inflation parts on both sides of the valve plate 5 reverse the air intake, which can retract the mating plate on the outside of the mating mechanism 6, causing the sealing gasket 7 to separate from the mating groove 30. When the sealing gasket 7 separates, the connecting hole 20 will be unblocked and open, allowing the nitrogen filled into the sealing gasket 7 to be discharged outward. At the same time, the sealing gasket 7 will also lose pressure and slightly shrink and deform. At this time, the discharged nitrogen will affect the inner surface of the mating groove 30. The blowing effect on the surface of the sealing gasket 7 and the bonding groove 30 can blow away and separate the tiny particles adsorbed on the surface of the sealing gasket 7, such as impurities remaining during the sealing process. Combined with subsequent directional air suction, impurities can be removed, preventing particles from entering the transmission channel and contaminating semiconductor devices. This helps to ensure the cleanliness of the working environment of the main valve 1. At the same time, nitrogen is an inert gas. After filling, it can form an inert protective layer inside the sealing gasket 7 and between the sealing gasket 7 and the bonding groove 30 after exhaust. This prevents the sealing gasket 7 from being corroded by the strong corrosive gases in the semiconductor process, delays the chemical aging of the sealing gasket 7, and improves the performance and lifespan of the sealing gasket 7.

[0039] A venting mechanism 8 is provided on the outer rear side of the sealing gasket 7, and the venting mechanism 8 is connected to the sealing gasket 7. When the sealing gasket 7 is sealed in the fitting groove 30, and when nitrogen is filled into the sealing gasket 7, as the amount of gas filled increases, the pressure will push the venting mechanism 8 open, allowing excess nitrogen to flow out from the venting mechanism 8. This allows the sealing gasket 7 to be depressurized, preventing excessive nitrogen from entering the sealing gasket 7 and causing it to over-expand and become easily damaged. At the same time, the nitrogen discharged from the venting mechanism 8 can flow to the surface of the sealing gasket 7 and into the sealed main valve 1, thus forming an inert protection within the main valve 1, further reducing the possibility of oxidation and corrosion of the internal components of the main valve 1, thereby improving the performance and lifespan of the main valve 1.

[0040] Absorption mechanisms 9 are provided on both sides of valve plate 5, and the absorption mechanisms 9 are fixedly connected to the internal sidewall of the main valve 1. A venting mechanism 10 is installed at the input end of the absorption mechanism 9, and the venting mechanism 10 is connected to the bonding groove 30. When valve plate 5 moves upward into place in the main valve 1, the clamping plate provided on the outer bonding plate of bonding mechanism 6 will be embedded into one end of absorption mechanism 9 from below. When bonding mechanism 6 moves horizontally to close, the clamping plate will squeeze the air cylinder provided in absorption mechanism 9, so that the air cylinder of absorption mechanism 9 will have an exhaust action. Absorption mechanism 9 is connected to venting mechanism 10 through a one-way valve. At the same time, absorption mechanism 9 is also provided with a one-way exhaust valve. When the clamping plate squeezes the air cylinder provided in absorption mechanism 9, the gas in the air cylinder will be discharged through the one-way exhaust valve. When the bonding mechanism 6 and the sealing gasket 7 are separated from the transfer door 4, the clamp plate on the outer bonding plate of the bonding mechanism 6 will reverse and drive the air cylinder to draw air. At this time, the air cylinder of the absorption mechanism 9 will use the ventilation mechanism 10 to draw air. The ventilation mechanism 10 is connected to the inner surface of the bonding groove 30. When the sealing gasket 7 is separated from the bonding groove 30, the suction of the absorption mechanism 9 and the ventilation mechanism 10, as well as the blowing of the bonding mechanism 6, can absorb the dust generated by the friction between the sealing gasket 7 and the bonding groove 30 in time, avoiding the accumulation of particles in the main valve 1. With the dual measures of directional blowing and directional suction, the particle residue can be greatly reduced, reducing pollution from the source of particle generation, ensuring the dust removal effect, and improving the yield of semiconductor products.

[0041] Simultaneously, the airflow blown out from the bonding mechanism 6 and absorbed from the bonding groove 30 allows the inert nitrogen gas to clean the inner surface of the bonding groove 30, thereby ensuring the cleanliness and smoothness of the bonding groove 30. While ensuring the sealing effect of the sealing gasket 7, it can also avoid the problem of accelerated bonding wear due to dust accumulation after long-term use, ensuring that the semiconductor transmission process is always in a high vacuum and high cleanliness environment, and ensuring transmission stability and consistency.

[0042] The fitting mechanism 6 includes an air inlet valve 61 mounted on the side surface of the valve plate 5, and an air passage 62 is provided on the inner surface of the valve plate 5. The air passage 62 is connected to the air inlet valve 61. The air inlet valve 61 is controlled by the controller and connected to an external air source of the main valve 1. Air can be introduced into the air passage 62 through the air inlet valve 61. A piston plate 63 is slidably mounted inside the valve plate 5, and a fitting valve plate 64 is fixed to the outside of the piston plate 63. When air is introduced into the air passage 62, the piston plate 63 will move outward from the valve plate 5 under the action of air pressure. The valve plate 64 is moved outward from the valve plate 5. The outer surface of the valve plate 64 is provided with a sealing gasket 7, so that the valve plate 64 and the sealing gasket 7 can fit and block the transmission door 4 opened on the outer cover plate 3. By using the upward movement of the valve plate 5 and the horizontal movement of the valve plate 64, the T-shaped movement of the transmission door 4 is blocked. When the valve plate 5 and the sealing gasket 7 move upward, they do not contact the inner wall of the main valve 1 and the outer cover plate 3. They move vertically to the closed position without contacting the valve body, thus minimizing the wear of the seal.

[0043] Springs 65 are fixed on both sides of the rear surface of the valve plate 64, and the two ends of the springs 65 are fixedly connected to the valve plate 64 and the valve plate 5 respectively. When the valve plate 64 moves forward, the springs 65 will be stretched. When the transmission door 4 is opened, the air intake valve 61 is controlled by the external air source to draw air in the opposite direction. Under the pull of the springs 65, the piston plate 63 moves in the opposite direction into the valve plate 5, which can retract the valve plate 64 and the sealing gasket 7.

[0044] A gas storage chamber 66 is provided in the middle of the inner side of the valve plate 5, and an inflation valve pipe 67 is connected to the lower part of the gas storage chamber 66. The inflation valve pipe 67 is connected to the inflation device outside the main valve 1, which can fill the gas storage chamber 66 with nitrogen. A solenoid valve 68 is connected to one side of the gas storage chamber 66.

[0045] The piston plate 63 and the valve plate 64 are provided with an air guide channel 69, which is connected to the sealing gasket 7. The valve plate 5 is equipped with a contact seat 610 at the rear of the interior. The contact seat 610 is the trigger switch for the solenoid valve 68. When the piston plate 63 and the valve plate 64 are moved out to their positions, the piston plate 63 will contact the contact seat 610, and the air guide channel 69 on the piston plate 63 will coincide with the outlet of the solenoid valve 68. At this time, the controller will open the solenoid valve 68 for a period of time and then close it, so that the nitrogen stored in the gas storage chamber 66 can be filled into the sealing gasket 7 through the air guide channel 69.

[0046] The injected nitrogen gas allows the sealing gasket 7 to expand and adhere better to the bonding groove 30. The pressure of the nitrogen gas assists in sealing, further filling the tiny gaps on the sealing surface, reducing the risk of leakage, and effectively ensuring the high vacuum environment required for semiconductor transmission. Simultaneously, when the sealing gasket 7 separates, the connecting hole 20 on its surface will be unblocked and open, allowing the nitrogen gas injected into the sealing gasket 7 to escape. At the same time, the sealing gasket 7 will lose pressure and slightly shrink and deform. The expelled nitrogen gas will create a blowing effect on the inner surface of the bonding groove 30 and the surface of the sealing gasket 7, thus allowing the bonding groove 30 to... The tiny particles adsorbed on the surface of the sealing gasket 7, such as impurities remaining during the sealing process, are blown away and separated. Combined with subsequent directional air intake, these impurities can be removed, preventing particles from entering the transmission channel and contaminating semiconductor devices. This helps to ensure the cleanliness of the working environment of the main valve 1. At the same time, nitrogen is an inert gas. After filling, it can form an inert protective layer inside the sealing gasket 7 and between the sealing gasket 7 and the bonding groove 30 after exhaust. This prevents the sealing gasket 7 from being corroded by the strong corrosive gases in the semiconductor process, delays the chemical aging of the sealing gasket 7, and improves the performance and lifespan of the sealing gasket 7.

[0047] To address the technical problem of seals being directly exposed to corrosive gases that may remain from semiconductor processes, leading to chemical aging, rapid decline in sealing performance, and increased release of dust particles after aging, such as... Figures 1-5 As shown, the following preferred technical solutions are provided:

[0048] The venting mechanism 8 includes an outlet pipe 81 connected to the rear surface of the sealing gasket 7, and the sealing gasket 7 is connected to the outlet pipe 81 and the air guide channel 69, so that nitrogen can be filled into the sealing gasket 7 through the air guide channel 69 and the outlet pipe 81.

[0049] The outlet pipe 81 is connected to two pressure relief pipes 82 on both sides, and a second spring 83 is installed inside the pressure relief pipe 82. One end of the second spring 83 is fixed to a valve disc 84, and the other end of the second spring 83 is fixedly connected to the pressure relief pipe 82. The pressure relief pipe 82 is provided with an installation groove 85. The sealing gasket 7 is fixedly installed in the installation groove 85 by the outlet pipe 81. When the sealing gasket 7 is normally inflated, the second spring 83 will push the valve disc 84 to block the pressure relief pipe 82, so as not to allow airflow from the pressure relief pipe 82. As the amount of air inflated increases, the air pressure will push up the valve disc 84 to compress the spring. Spring 83 opens the pressure relief pipe 82, allowing excess nitrogen gas to flow out through it. This relieves pressure in the sealing gasket 7, preventing excessive nitrogen from entering and causing it to over-expand and become damaged. Simultaneously, the released nitrogen flows from the pressure relief pipe 82 to the surface of the sealing gasket 7 and into the closed main valve 1, creating an inert environment within the main valve 1. This further reduces the possibility of oxidation and corrosion of internal components, thus improving the performance and lifespan of the main valve 1.

[0050] To address the technical problem of dust particles being difficult to remove at the source, leading to dust accumulation over long-term use, which reduces smoothness and exacerbates wear and tear on the bonding surface, such as... Figures 3-10 As shown, the following preferred technical solutions are provided:

[0051] The absorption mechanism 9 includes a mounting bracket 91 fixed to the rear of one end of the fitting valve plate 64, and an embedded block 92 fixed to the front of one end of the mounting bracket 91. A piston cylinder 93 is fixedly installed on the inner side wall of the main valve 1, and a piston rod 94 is slidably installed at the rear end of the piston cylinder 93. When the valve plate 5 moves upward into place in the main valve 1, the embedded block 92 provided on the fitting valve plate 64 will be embedded into the mating groove at the end of the piston rod 94 from below. When the fitting valve plate 64 moves horizontally to fit and close, the mounting bracket 91 and the embedded block 92 will push the piston rod 94, and the piston at the front end of the piston rod 94 will move in the piston cylinder 93.

[0052] A one-way air inlet pipe 95 is connected to the upper side of the piston cylinder 93, and the front end of the one-way air inlet pipe 95 is connected to an air distribution pipe 96. A dust filter screen 97 is fixed inside the upper part of the piston cylinder 93.

[0053] The ventilation mechanism 10 includes an air intake pipe 101 connected to the air distribution pipe 96, and an air intake port 102 is provided at the front end of the air intake pipe 101. The air intake port 102 is disposed through the inner surface of the bonding groove 30. Several sets of air intake pipes 101 and air intake ports 102 are provided in the bonding groove 30. When the piston cylinder 93 draws air using the one-way air intake pipe 95 and the air distribution pipe 96, it can draw air from the inside of the bonding groove 30 using the air intake pipe 101 and the air intake port 102. A diameter reduction ring 103 is fixed in the middle of the inner side of the air intake pipe 101. When drawing air in the air intake pipe 101, the diameter reduction ring 103 can improve the airflow intensity and improve the dust collection effect.

[0054] One-way exhaust pipe 98 is connected to the upper side of piston cylinder 93, and the front end of one-way exhaust pipe 98 is connected to dust collection chamber 99. Dust collection chamber 99 is a filter chamber. The gas introduced by one-way exhaust pipe 98 will be discharged after being filtered by dust collection chamber 99. When piston rod 94 and piston move inside piston cylinder 93, the gas in the cylinder will be discharged outward through dust collection chamber 99 via one-way exhaust pipe 98. When the valve plate 64 and sealing gasket 7 are separated from the transmission door 4, the mounting bracket 91 and the embedding block 92 will drive piston rod 94 to move inside piston cylinder 93 in the opposite direction. At this time, air will be drawn in using one-way intake pipe 95 and air distribution pipe 96. Air distribution pipe 96 is connected to ventilation mechanism 10. When sealing gasket 7 is separated from the bonding groove 30, the gas will be drawn in using one-way intake pipe 95 and air distribution pipe 96. By using the air distribution pipe 96 and the air ventilation mechanism 10 to draw air, particles in the bonding groove 30 are drawn onto the dust filter 97 in the piston cylinder 93. The dust filter 97 can block the particles and prevent them from accumulating and affecting the piston movement of the piston rod 94. When the piston rod 94 pushes forward in the piston cylinder 93, the particles collected on the dust filter 97 can be discharged into the dust collection chamber 99 through the air outlet pipe 98. This, combined with the air blowing of the bonding mechanism 6, can promptly absorb the dust generated by the friction between the sealing gasket 7 and the bonding groove 30, preventing particles from accumulating in the main valve 1. Furthermore, by using the dual measures of directional air blowing and directional air suction, the residual particles can be significantly reduced, reducing pollution from the source of particle generation, ensuring the dust removal effect, and improving the yield of semiconductor products.

[0055] Simultaneously, the airflow blown out from the sealing gasket 7 and absorbed from the bonding groove 30 allows the inert nitrogen gas to clean the inner surface of the bonding groove 30, thereby ensuring the cleanliness and smoothness of the bonding groove 30. While ensuring the sealing effect of the sealing gasket 7, it can also avoid the problem of accelerated bonding wear due to dust accumulation after long-term use, ensuring that the semiconductor transmission process is always in a high vacuum and high cleanliness environment, and ensuring transmission stability and consistency.

[0056] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0057] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A dual-door transfer valve for a semiconductor processing etching apparatus, comprising a main valve (1) and a drive seat (2) installed in the middle below the main valve (1), wherein an outer cover plate (3) is fixed to the front and rear sides of the main valve (1), and a transfer door (4) is provided above the surface of the outer cover plate (3), characterized in that: The output end of the drive seat (2) is equipped with a valve plate (5), and the valve plate (5) is located in the middle of the inner side of the main valve (1); The valve plate (5) is equipped with a bonding mechanism (6) on its front and rear surfaces, and a sealing gasket (7) is installed on the outer surface of the bonding mechanism (6). The inner surface of the outer cover plate (3) is provided with a bonding groove (30), and the bonding groove (30) is located around the transmission door (4). The outer surface of the sealing gasket (7) is provided with a connecting hole (20). The outer rear side of the sealing gasket (7) is provided with a venting mechanism (8), and the venting mechanism (8) is connected to the sealing gasket (7). The valve plate (5) is provided with absorption mechanisms (9) on both sides, and the absorption mechanisms (9) are fixedly connected to the inner sidewall of the main valve (1). The input end of the absorption mechanism (9) is equipped with a ventilation mechanism (10), and the ventilation mechanism (10) is connected to the bonding groove (30). The bonding mechanism (6) includes an air intake valve (61) installed on the side surface of the valve plate (5), and an air passage (62) is provided on the inner surface of the valve plate (5), and the air passage (62) is connected to the air intake valve (61). A piston plate (63) is slidably installed inside the valve plate (5), and a bonding valve plate (64) is fixed outside the piston plate (63). Springs 1 (65) are fixed on both sides of the rear surface of the valve plate (64), and the two ends of springs 1 (65) are fixedly connected to the valve plate (64) and the valve plate (5) respectively. An air storage chamber (66) is provided in the middle of the inner side of the valve plate (5), and an air filling valve pipe (67) is connected to the lower part of the air storage chamber (66). A solenoid valve (68) is connected to one side of the air storage chamber (66). The piston plate (63) and the valve plate (64) are provided with air guide channels (69), and the air guide channels (69) are connected to the sealing gasket (7). A contact seat (610) is installed at the rear of the valve plate (5). The venting mechanism (8) includes an outlet pipe (81) connected to the rear surface of the sealing gasket (7), and the sealing gasket (7) is connected to the outlet pipe (81) and the air guide channel (69); The two sides of the vent pipe (81) are respectively connected to the pressure relief pipe (82), and the pressure relief pipe (82) is equipped with a second spring (83). One end of the second spring (83) is fixed with a valve disc (84), and the other end of the second spring (83) is fixedly connected to the pressure relief pipe (82). The pressure relief pipe (82) is provided with an installation groove (85) on the outside.

2. The dual-gate transfer valve of a semiconductor processing etching apparatus according to claim 1, characterized in that: The absorption mechanism (9) includes a mounting bracket (91) fixed behind one end of the fitting valve plate (64), and an embedded block (92) is fixed in front of one end of the mounting bracket (91). A piston cylinder (93) is fixedly installed on the inner side wall of the main valve (1), and a piston rod (94) is slidably installed at the inner rear end of the piston cylinder (93).

3. The dual-gate transfer valve of a semiconductor processing etching apparatus according to claim 2, characterized in that: The piston cylinder (93) is connected to a one-way air inlet pipe (95) on one side above, and the front end of the one-way air inlet pipe (95) is connected to an air distribution pipe (96). A dust filter (97) is fixed inside the upper end of the piston cylinder (93).

4. The dual-gate transfer valve of a semiconductor processing etching apparatus according to claim 3, characterized in that: The ventilation mechanism (10) includes an air intake pipe (101) connected to the air distribution pipe (96), and an air intake port (102) is provided at the front end of the air intake pipe (101). The air intake port (102) is disposed through the inner surface of the fitting groove (30). Several sets of air intake pipes (101) and air intake ports (102) are provided in the fitting groove (30). A diameter reduction ring (103) is fixed in the middle of the inner side of the air intake pipe (101).

5. The dual-gate transfer valve of a semiconductor processing etching apparatus according to claim 2, characterized in that: The piston cylinder (93) is connected to a one-way air outlet pipe (98) on one side above, and the front end of the one-way air outlet pipe (98) is connected to a dust collection chamber (99).

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