Method and device for controlling edge etching position
By using preset correction functions and correction coefficients in the semiconductor manufacturing process, the problem of etching position offset caused by stepper servo motor and nozzle drive structure is solved, and higher precision edge etching position control is achieved.
Patent Information
- Application Number
- CN202410825019.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-06-24
- Publication Date
- 2025-12-26
AI Technical Summary
In the existing technology, the transmission structure between the stepper servo motor and the nozzle causes a large offset between the etching position and the set position, making it difficult to achieve precise edge etching position control.
By obtaining the target etching width of the target cavity, the set etching width is determined using a preset correction function and correction coefficient, thereby reducing the deviation between the actual etching width and the target etching width. The edge etching position is controlled using the correction function and correction coefficient.
It improves the control precision of edge etching position, reduces etching position deviation, and ensures the stability and consistency of etching width.
Smart Images
Figure CN121215519A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to a method and device for controlling an edge etching position. BACKGROUND
[0002] In a semiconductor manufacturing process, the edge of a wafer is cleaned. Bevel cleaning is an edge cleaning technology that processes the edge of a wafer surface coating layer by etching. The film layer in a region about 1-2 mm from the edge is etched away in advance to avoid problems in subsequent processes.
[0003] In the edge cleaning process, different products have different etching width requirements, and the edge cleaning position needs to be switched. The etching width is the distance between the etching position and the wafer edge. In the prior art, the edge cleaning position is switched by controlling the corresponding transmission structure and the nozzle spraying cleaning liquid through the step servo motor of the cleaning equipment.
[0004] The transmission structure between the step motor and the nozzle causes a large deviation between the actual etching position of the nozzle and the cleaning position set by the step motor. How to reduce the deviation between the set cleaning position and the actual cleaning position in the cavity is a technical problem that needs to be solved by those skilled in the art. SUMMARY
[0005] To solve the problems in the prior art, the present application provides a method and device for controlling an edge etching position.
[0006] The present application provides a method and device for controlling an edge cleaning position, comprising:
[0007] obtaining a target etching width of a target cavity;
[0008] determining a set etching width of the target cavity based on a preset correction function corresponding to the target cavity and the target etching width, wherein the preset correction function is determined based on at least two groups of etching width sample groups of the target cavity;
[0009] controlling the edge etching position of the target cavity based on the set etching width.
[0010] According to the method for controlling an edge etching position provided by the present application, the step of determining the preset correction function comprises:
[0011] obtaining the at least two groups of etching width sample groups of the target cavity;
[0012] fitting to obtain a first correction coefficient and a second correction coefficient of the target cavity based on the at least two groups of etching width sample groups.
[0013] determine the preset correction function corresponding to the target cavity based on the first correction coefficient and the second correction coefficient.
[0014] According to the method for controlling the edge etching position provided in the application, each of the etching width sample groups comprises:
[0015] The motor etching width of the target cavity and the actual etching width in the target cavity.
[0016] According to the method for controlling the edge etching position provided in the application, the preset correction function is determined by using formula (1):
[0017]
[0018] Wherein, Y1 is the first motor etching width, X1 is the first actual etching width corresponding to the first motor etching width;
[0019] Y1 is the second motor etching width, X1 is the second actual etching width corresponding to the second motor etching width;
[0020] a is the first correction coefficient, and b is the second correction coefficient.
[0021] According to the method for controlling the edge etching position provided in the application, after the preset correction function corresponding to the target cavity is determined based on the first correction coefficient and the second correction coefficient, the method further comprises:
[0022] The goodness of fit of the correction function is verified based on a linear regression equation.
[0023] The application also provides a device for controlling the edge etching position, comprising:
[0024] The acquisition module is configured to acquire a target etching width of a target cavity.
[0025] The determination module is configured to determine a set etching width of the target cavity based on a preset correction function corresponding to the target cavity and the target etching width, wherein the preset correction function is determined based on at least two etching width sample groups of the target cavity.
[0026] The control module is configured to control the edge etching position of the target cavity based on the set etching width.
[0027] The application also provides an electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement the method for controlling the edge etching position as described above.
[0028] The application further provides a non-transitory computer-readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the edge etching position control method according to any one of the above.
[0029] The application further provides a computer program product, which comprises a computer program, and the computer program is executed by a processor to implement the edge etching position control method according to any one of the above.
[0030] The edge etching position control method provided by the application determines the set etching width corresponding to the target etching width based on the target etching width and the correction function of the target cavity, the correction function is determined based on at least two groups of etching width sample groups of the target cavity, the set etching width corresponding to the target etching width is determined through the correction function, and the etching position of the target cavity is controlled based on the etching width, so as to reduce the deviation between the actual etching width in the target cavity and the target etching width, and improve the accuracy of the edge etching position control. BRIEF DESCRIPTION OF DRAWINGS
[0031] In order to more clearly illustrate the technical solutions of the application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or the prior art description. Obviously, the drawings in the following description are some embodiments of the application, and other drawings can be obtained by those skilled in the art without creative labor.
[0032] Figure 1 is a flowchart of the edge etching position control method provided by the application;
[0033] Figure 2 is a flowchart of the correction function determination of the edge etching position control method provided by the application;
[0034] Figure 3a and Figure 3b is an effect diagram of the edge etching position control method provided by the application;
[0035] Figure 4 is a structural schematic diagram of the edge etching position control device provided by the application;
[0036] Figure 5 is a structural schematic diagram of the electronic device provided by the application. DETAILED DESCRIPTION
[0037] In order to make the purposes, technical solutions and advantages of the present application clearer, the technical solutions in the present application will be described clearly and completely in combination with the drawings in the present application. Obviously, the described embodiments are some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of protection of the present application.
[0038] The bevel clean is a method for processing the edge of the wafer surface coating film. Due to the nature of the wafer edge film, the stress of the film at the edge of the wafer is large, and the film is prone to peeling off in the subsequent process with large temperature change, thereby damaging the product structure. The bevel clean can avoid the problem of the film in the subsequent process by etching the film at the edge region about 1-2 mm away from the wafer edge in advance.
[0039] In the specific production process, different edge etching widths are required for different products, and the cleaning equipment needs to switch the edge etching width at any time. In theory, it can be directly completed by a stepping servo motor, but in the specific implementation, limited by the size of the processing cavity of the cleaning equipment, maintenance and replacement requirements, chamber particle / metal control requirements, etc., the stepping servo motor usually needs to be placed in the frame area outside the processing cavity. The switching of the edge etching position needs to be realized by the stepping servo motor control transmission structure and nozzle. The transmission structure is connected with the nozzle, and the increase of the transmission structure will inevitably cause a large deviation between the actual position of the nozzle moved to and the set position of the stepping servo motor.
[0040] The machine table in the embodiments of the present application usually includes 8-12 cavities, and Table 1 is the actual measurement table of the etching position offset distance of part of the cavities of the machine table in the embodiments of the present application before adjustment.
[0041] Table 1
[0042] Setting 0.9 Setting 1.1 Setting 1.3 0.9-1.1 1.1-1.3 CH1 measured value 0.893 1.147 1.392 0.254 0.245 CH2 measured value 0.928 1.156 1.385 0.228 0.229 CH3 measured value 0.922 1.155 1.406 0.227 0.251 CH4 measured value 0.887 1.165 1.401 0.278 0.236
[0043] As shown in Table 1, after the etching zero point is determined, the moving distance of the stepping servo motor is set through a recipe (RCP). In the implementation, the etching zero point is the original point of the stepping servo motor control movement, which can be set as the edge of the wafer in the embodiment of the present application. As shown in Table 1, the etching width set by the RCP, i.e. the distance from the etching zero point, is 0.9 mm, 1.1 mm and 1.3 mm respectively. The actual etching positions of the nozzles in the four chambers (CH1-CH4) under different RCP settings are measured, i.e. the actual etching positions. For chamber 1, see Table 1 CH1, when the etching position set by the RCP is 0.9 mm, the actual etching position is 0.893 mm; when the etching position set by the RCP is 1.1 mm, the actual etching position is 1.147 mm; and when the etching position set by the RCP is 1.3 mm, the actual etching position is 1.392 mm. It can be obtained that there is a certain deviation between the etching position set by the RCP and the actual etching position. Further, in the process of switching the edge etching width from 0.9 mm to 1.1 mm, the actual moving distance is 0.254, which has a large deviation compared with the RCP setting of 0.2 mm. In the process of switching the edge etching width from 1.1 mm to 1.3 mm, the actual moving distance is 0.245, which has a large deviation compared with the RCP setting of 0.2 mm. The corresponding relationship between the RCP set etching position and the actual measured etching position of other chambers, such as CH2-CH4, is shown in Table 1.
[0044] To solve the problem that there is a large deviation between the etching position set by the stepping servo motor and the actual etching position of the nozzle in the chamber, the present application provides an edge etching position control method and device.
[0045] The edge etching position control method and device of the present application will be described below. Figures 1-5 The edge etching position control method and device of the present application will be described below.
[0046] Figure 1 The edge etching position control method provided by the present application is shown in the flowchart as shown in Figure 1 The edge etching position control method provided by the present application includes the following steps:
[0047] S101, acquiring a target etching width of a target chamber.
[0048] Specifically, in the embodiment of the present application, the control system of the cleaning equipment can be used to acquire the control instruction of the target chamber, and the control instruction is used to indicate the target etching width of the target chamber. The target etching width can be determined through the control menu of the cleaning equipment and the corresponding control instruction is issued. The specific manner is not limited herein. The target etching width is the distance from the etching zero point.
[0049] It should be noted that the cleaning equipment in the embodiments of the present application includes a plurality of target cavities. Due to assembly errors and other reasons, the etching deviations of each target cavity are not the same. In specific implementation, corresponding settings need to be made for each target cavity.
[0050] In S102, a set etching width of the target cavity is determined based on a preset correction function corresponding to the target cavity and the target etching width. The preset correction function is determined based on at least two groups of etching width samples of the target cavity.
[0051] Specifically, after the target etching width of the target cavity is obtained, the set etching width of the target cavity is determined based on the preset correction function corresponding to the target cavity. The set etching width of the stepping servo motor of the cleaning equipment is set by RCP. In the cleaning equipment of the embodiments of the present application, a plurality of target cavities are included. In specific implementation, the preset correction functions corresponding to each target cavity can be different.
[0052] The preset correction function is determined based on at least two groups of etching width samples of the target cavity. In theoretical design, the set etching width of the stepping servo motor should be consistent with the actual etching width of the nozzle in the target cavity. Due to the reasons of transmission structure and machine assembly errors, the actual etching width and the set etching width will deviate, and then a plurality of etching width samples will appear, that is, the corresponding groups of the motor etching width set by RCP and the actual etching width of the nozzle in the target cavity. Through at least two groups of etching width sample groups, the correction coefficient of the target cavity is fitted and determined to determine the preset correction function corresponding to the target cavity. The preset correction function reflects the relationship between the actual etching width and the set etching width.
[0053] After the target etching width is obtained, the target etching width is brought into the preset correction function corresponding to the target cavity, and the set etching width corresponding to RCP when the actual etching width is the target etching width is inversely deduced.
[0054] In S103, the edge etching position of the target cavity is controlled based on the set etching width.
[0055] Specifically, after the set etching width of RCP is determined, the set etching width is configured in the configuration of the target cavity. The stepping servo motor drives the transmission structure and the nozzle in the target cavity to move to control the edge etching position of the target cavity. When the set etching width of RCP is set, the deviation between the actual etching width of the target cavity and the motor etching width is considered. The corresponding set etching width when the target etching width is achieved is obtained through the preset correction function and the correction coefficient of the target cavity.
[0056] The method for controlling the edge etching position provided in the embodiments of the present application determines the correction function of the target cavity through the corresponding relationship between the at least two groups of etching width sample groups, i.e. the RCP motor etching width and the actual etching width in the target cavity, considers the deviation between the motor etching width and the actual etching width, and reverses the set etching width through the correction function of the target cavity for the obtained target etching width, so as to control the etching width of the target cavity through the set etching width, reduce the deviation between the actual etching width in the target cavity and the target etching width, and improve the accuracy of the edge etching position control.
[0057] Optionally, the method for determining the preset correction function is as follows. Figure 2 is a flowchart of the method for determining the correction function of the edge etching position provided in the present application. As shown in Figure 2 the step of determining the preset correction function in the embodiments of the present application includes:
[0058] S201, obtaining at least two groups of etching width sample groups of a target cavity;
[0059] In a specific implementation, the step motor drives the transmission structure and the nozzle in the target cavity to move to etch the edge of the wafer, the motor etching width of the RCP is set, and the actual etching width of the nozzle in the target cavity deviates from the motor etching width set by the RCP. In this case, the motor etching width set by the RCP and the actual etching width in the target cavity are a group of etching width sample groups. In the embodiments of the present application, at least two groups of etching width samples need to be obtained.
[0060] It should be noted that the motor etching width in the etching width sample group can be directly obtained, and the actual etching width in the target cavity can be obtained through a charge-coupled device (CCD) and image processing software, and the specific manner is not limited herein. When etching the edge of the wafer in the target cavity, the etching width data of a plurality of points in one rotation of the wafer is selected, and in the embodiments of the present application, the etching width of 72 sample points in one rotation of the wafer can be selected, the average value is calculated as the actual etching width in the target cavity. In the embodiments of the present application, the etching width sample group is the motor etching width and the corresponding actual etching width, wherein the actual etching width is obtained by calculating the average value of the actual etching width of the sample points in one rotation of the wafer.
[0061] S202, based on each etching width sample group, fitting to obtain a first correction coefficient and a second correction coefficient of the target cavity;
[0062] Specifically, in this step, the first correction coefficient and the second correction coefficient of the target cavity are inversely deduced by fitting the above-mentioned at least two groups of etching width sample groups. In specific implementation, the process of fitting and inversely deducing needs corresponding adjustment of other process parameters of the target cavity, which is not specifically limited here.
[0063] S203, determining a preset correction function corresponding to the target cavity based on the first correction coefficient and the second correction coefficient.
[0064] Specifically, in this step, the correction function corresponding to the target cavity is determined based on the first correction coefficient and the second correction coefficient obtained in S202.
[0065] Optionally, according to the control method of the edge etching position provided in the embodiment of the present application, the etching width sample groups include:
[0066] The motor etching width of the target cavity and the actual etching width in the target cavity.
[0067] Optionally, according to the control method of the edge etching position provided in the embodiment of the present application, S203 includes:
[0068] The correction function is determined by using formula (1):
[0069]
[0070] Wherein, Y1 is the first motor etching width, X1 is the first actual etching width corresponding to the first motor etching width;
[0071] Y2 is the second motor etching width, X2 is the second actual etching width corresponding to the second motor etching width;
[0072] a is the first correction coefficient, and b is the second correction coefficient.
[0073] It should be noted that in other embodiments, the correction function can be other forms, and different functions are set, such as quadratic function.
[0074] Optionally, according to the control method of the edge etching position provided in the embodiment of the present application, after S203, it further includes:
[0075] The goodness of fit of the correction function is verified based on the linear regression equation.
[0076] Specifically, after the correction function of the target cavity is determined, the correction function can be verified by some more precise target etching width and actual etching width in the target cavity, for example, the target etching width can be more accurate 0.85mm, 0.95mm, etc.
[0077] Further, after the correction function is determined, the goodness of fit of the correction function needs to be tested by a linear regression equation. In a specific implementation, the total sum of squares is determined by the regression sum of squares and the residual sum of squares of the correction function, the regression coefficient, i.e., the goodness of fit, is determined based on the ratio of the regression sum of squares to the total sum of squares, the goodness of fit is tested, and in the embodiment of the present application, the goodness of fit close to 1 is determined as the correction function currently determined is available.
[0078] Table 2 is an actual measurement table of the etching position offset distance of the adjusted part of the chamber of the machine table in the embodiment of the present application.
[0079] Table 2
[0080]
[0081] As shown in Table 2, after the set etching width is obtained by the correction function, the actual etching width of the target chamber is measured. Taking CH1 as an example, the first correction coefficient is 0.8 and the second correction coefficient is 0.15, so the correction function of CH1 is Y=0.8X+0.15. When the target etching width is 0.9, the set etching width should be 0.9375. The actual measurement shows that the average value of the actual etching width of 72 sample points of the wafer collected in CH1, i.e., the mean value in Table 2, is 0.901, which is close to the target etching distance 0.9 and is better than 0.893 in Table 1. The difference between the maximum value and the minimum value in the 72 sample points, i.e., the range, is 0.144, and the fluctuation is small.
[0082] Figure 3a And Figure 3b is an effect diagram of the control method of the edge etching position provided by the present application; wherein, Figure 3a is an actual test diagram of the target etching width of 0.8 mm before using the correction coefficient, Figure 3b is an actual test diagram of the target etching width of 0.9 mm after adjusting the set etching width using the correction coefficient.
[0083] As Figure 3a and Figure 3b can be seen, after adjusting the set etching width using the correction coefficient, the deviation between the target etching width and the actual etching width is reduced and the fluctuation is smaller, and the etching width is more stable and accurate in an etching cycle.
[0084] The control device of the edge etching position provided by the present application is described below, and the control device of the edge etching position described below can be correspondingly referred to the control method of the edge etching position described above.
[0085] Figure 4 is a structural schematic diagram of the control device of the edge etching position provided by the present application, asFigure 4 As shown, the edge etching position control device provided by the embodiments of the present application comprises:
[0086] The acquisition module 401 is configured to acquire a target etching width of a target cavity.
[0087] The determination module 402 is configured to determine a set etching width of the target cavity based on a preset correction function corresponding to the target cavity and the target etching width, wherein the preset correction function is determined based on at least two groups of etching width sample groups of the target cavity.
[0088] The control module 403 is configured to control an edge etching position of the target cavity based on the set etching width.
[0089] The edge etching position control device of the embodiments of the present application realizes accurate control of the etching width of the target cavity through mutual cooperation of various modules. The correction function of the target cavity is determined through the correspondence between the RCP motor etching width and the actual etching width in the target cavity, that is, the at least two groups of etching width sample groups in the target cavity. The deviation between the motor etching width and the actual etching width is considered. For the target etching width obtained, the set etching width is obtained through the correction function of the target cavity. The etching width of the target cavity is controlled by the set etching width, which reduces the deviation between the actual etching width in the target cavity and the target etching width, and improves the accuracy of the edge etching position control.
[0090] Figure 5 is a structural schematic diagram of an electronic device provided by the present application. Figure 5 An example of a physical structure schematic diagram of an electronic device is shown in Figure 5 As shown, the electronic device can include a processor 510, a communications interface 520, a memory 530, and a communications bus 540, wherein the processor 510, the communications interface 520, and the memory 530 complete mutual communication through the communications bus 540. The processor 510 can invoke the logical instructions in the memory 530 to execute the above-mentioned edge etching position control method, which comprises:
[0091] acquiring a target etching width of a target cavity;
[0092] determining a set etching width of the target cavity based on a preset correction function corresponding to the target cavity and the target etching width, wherein the preset correction function is determined based on at least two groups of etching width sample groups of the target cavity;
[0093] controlling an edge etching position of the target cavity based on the set etching width.
[0094] Further, the logic instructions in the memory 530 described above can be implemented in the form of software functional units and sold or used as independent products, and can be stored in a computer readable storage medium. Based on such understanding, the technical solutions of the present application or the part of the prior art that essentially contributes or the part of the technical solutions can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes a plurality of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the methods described in the various embodiments of the present application. The aforementioned storage medium includes: a U disk, a mobile hard disk, a read-only memory (ROM, Read-Only Memory), a random access memory (RAM, Random Access Memory), a magnetic disk or an optical disk, and various media that can store program codes.
[0095] In another aspect, the present application also provides a computer program product, which comprises a computer program, the computer program can be stored on a non-transitory computer readable storage medium, and the computer program is executed by a processor, so that the computer can execute the control method of the edge etching position provided by the above-mentioned methods, and the method comprises:
[0096] obtaining a target etching width of a target cavity;
[0097] determining a set etching width of the target cavity based on a preset correction function corresponding to the target cavity and the target etching width, wherein the preset correction function is determined based on at least two groups of etching width sample groups of the target cavity;
[0098] controlling the edge etching position of the target cavity based on the set etching width.
[0099] In still another aspect, the present application also provides a non-transitory computer readable storage medium, which stores a computer program, and the computer program is executed by a processor to implement the control method of the edge etching position provided by the above-mentioned methods, and the method comprises:
[0100] obtaining a target etching width of a target cavity;
[0101] determining a set etching width of the target cavity based on a preset correction function corresponding to the target cavity and the target etching width, wherein the preset correction function is determined based on at least two groups of etching width sample groups of the target cavity;
[0102] controlling the edge etching position of the target cavity based on the set etching width.
[0103] Finally, it should be noted that the above examples are only used to illustrate the technical solutions of the present application, and are not intended to limit the same; although the present application has been described in detail with reference to the foregoing examples, those of ordinary skill in the art should understand that they can still modify the technical solutions recorded in the foregoing examples, or make equivalent replacements for some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims
1. A method of controlling the position of an edge etch, characterized by, The method comprises the following steps: acquiring a target etching width of a target cavity; determining a set etching width of the target cavity based on a preset correction function corresponding to the target cavity and the target etching width, wherein the preset correction function is determined based on at least two groups of etching width sample groups of the target cavity; controlling an edge etching position of the target cavity based on the set etching width.
2. The method of claim 1, wherein The step of determining the preset correction function comprises: acquiring the at least two groups of etching width sample groups of the target cavity; fitting to obtain a first correction coefficient and a second correction coefficient of the target cavity based on the at least two groups of etching width sample groups; determining the preset correction function corresponding to the target cavity based on the first correction coefficient and the second correction coefficient.
3. The method of claim 2, wherein Each of the etching width sample groups comprises: a motor etching width of the target cavity and an actual etching width in the target cavity.
4. The method of claim 3, wherein The preset correction function is determined by using formula (1): wherein Y1 is a first motor etching width, X1 is a first actual etching width corresponding to the first motor etching width; Y2 is a second motor etching width, X2 is a second actual etching width corresponding to the second motor etching width; a is the first correction coefficient, and b is the second correction coefficient.
5. The method of claim 2, wherein After the preset correction function corresponding to the target cavity is determined based on the first correction coefficient and the second correction coefficient, the method further comprises: checking a fitting goodness of the correction function based on a linear regression equation.
6. An apparatus for controlling the position of an edge etch, characterized by The method comprises the following steps: an acquiring module configured to acquire a target etching width of a target cavity; a determining module configured to determine a set etching width of the target cavity based on a preset correction function corresponding to the target cavity and the target etching width, wherein the preset correction function is determined based on at least two groups of etching width sample groups of the target cavity; a controlling module configured to control an edge etching position of the target cavity based on the set etching width.
7. An electronic device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, The processor executes the program to implement the edge etching position control method according to any one of claims 1 to 5.
8. A non-transitory computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed by the processor to implement the edge etching position control method according to any one of claims 1 to 5.
9. A computer program product comprising a computer program, characterized in that, The computer program is executed by the processor to implement the edge etching position control method according to any one of claims 1 to 5.