Processing apparatus

Abstract

Provided is a technique capable of processing a substrate in a short time. A processing apparatus (1) includes: a stage (10) configured to hold a substrate (Wf) such that a surface to be processed of the substrate faces upward; a stage rotation device (20) configured to rotate the stage; a plurality of heads (30a, 40a) on which processing pads (Pd1, Pd2) having an area smaller than the area of the surface to be processed of the substrate are respectively mounted; a plurality of heads; a plurality of head rotating devices (50a, 55a); a plurality of pressing devices (60a, 65a) each having an electromagnetic actuator configured so as to apply a pressing force to each of the plurality of heads by means of an electromagnetic force; and a plurality of swing devices (70a, 80a).

Description

Technical Field

[0001] This invention relates to a processing apparatus. This application claims priority to Japanese Patent Application No. 2024-101770, filed June 25, 2024. The entire disclosure of Japanese Patent Application No. 2024-101770, including its specification, scope of claims, drawings, and abstract, is incorporated herein by reference. Background Technology

[0002] Conventionally, processing apparatuses are known for performing predetermined processes (such as polishing) on ​​substrates. Specifically, such processing apparatuses include a stage and a head. The stage is configured to hold the substrate with the surface to be processed facing upwards, and the head is configured to hold a single processing pad and bring the processing pad into contact with the surface to be processed on the substrate (see, for example, Patent Documents 1 and 2). Furthermore, in the processing apparatuses illustrated in Patent Documents 1 and 2, the area of ​​the processing pad is smaller than the area of ​​the surface to be processed on the substrate. With this structure, the surface to be processed on the substrate can be processed locally using the processing pad.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-58724

[0006] Patent Document 2: Japanese Patent Application Publication No. 2017-64801

[0007] The technical problem that the invention aims to solve

[0008] However, from the viewpoint of processing the substrate in a short time, there is room for improvement in such conventional processing devices. Summary of the Invention

[0009] The present invention was made in view of the above, and one of its objectives is to provide a technology that can process substrates in a short time.

[0010] Technical methods for solving technical problems

[0011] (Method 1)

[0012] To achieve the above-mentioned objective, one aspect of the present invention provides a processing apparatus configured to perform a grinding process on a substrate as a predetermined process, comprising: a table configured to hold the substrate with the surface to be processed facing upwards; a table rotation device configured to rotate the table; a plurality of heads, each of which is equipped with a processing pad having an area smaller than the area of ​​the surface to be processed on the substrate, the plurality of heads being configured to contact the processing pad with the surface to be processed on the substrate; a plurality of head rotation devices configured to rotate the plurality of heads respectively; a plurality of pressing devices, each of which has an electromagnetic actuator configured to apply pressing force to the plurality of heads respectively using electromagnetic force; and a plurality of oscillating devices configured to oscillate the plurality of heads respectively.

[0013] According to this method, multiple processing pads can be used to process the substrate, thus enabling the substrate to be processed in a shorter time compared to the case where only a single processing pad is used.

[0014] Furthermore, according to this method, the pressing device is equipped with an electromagnetic actuator, thus, compared to the case where the pressing device replaces the electromagnetic actuator with a pressing mechanism such as a cylinder, pressing force can be applied to the head quickly. In this respect, according to this method, the substrate can be processed in a short time.

[0015] (Method 2)

[0016] In the above method 1, the plurality of heads may each include: a retaining plate on which the processing pad is mounted; a base plate disposed above the retaining plate; and a rubber buffer plate disposed between the retaining plate and the base plate.

[0017] (Method 3)

[0018] In either of the above methods 1 or 2, a plurality of nozzles may be provided in the outer edge region of a region extending a predetermined distance from the outer edge of the upper surface of the platform toward the center of the upper surface. These nozzles are configured to spray liquid toward the lower surface of the substrate disposed on the upper surface.

[0019] (Method 4)

[0020] In any of the above-described methods 1 to 3, the plurality of heads may have a first head and a second head, with a first processing pad mounted on the first head and a second processing pad mounted on the second head. The plurality of swinging devices may have a first swinging device and a second swinging device. The first swinging device is configured to swing the first head, and the second swinging device is configured to swing the second head. The first swinging device has a first swing axis and is configured to swing the first head around the first swing axis. The second swinging device has a second swing axis and is configured to swing the second head around the second swing axis. The first swing axis and the second swing axis are located in an area that is located on the outside of the platform when viewed from above.

[0021] (Method 5)

[0022] In the above-described method 4, it is also possible that, assuming a first central axis passing through the center of the platform and a second central axis passing through the center and perpendicular to the first central axis during the top-down observation, the first swing axis and the second swing axis are configured in one of two regions divided by the first central axis, the first swing axis is configured in one of two regions divided by the second central axis, and the second swing axis is configured in the other of the two regions divided by the second central axis. Attached Figure Description

[0023] Figure 1 This is a schematic diagram showing the main structure of the processing apparatus in the implementation method.

[0024] Figure 2 This is a schematic top view illustrating the swinging of multiple heads in an embodiment.

[0025] Figure 3 This is a schematic top view showing the state in which the multiple heads of the embodiment are not located above the platform.

[0026] Figure 4 (A) is a schematic diagram illustrating the peripheral structure of the first head in the embodiment. Figure 4 (B) is a schematic diagram illustrating the peripheral structure of the second head in the embodiment.

[0027] Figure 5 (A) is a schematic top view of the buffer plate of the embodiment. Figure 5 (B) is a schematic bottom view of the buffer plate of the embodiment.

[0028] Figure 6 (A) is a schematic top view of the platform in the embodiment. Figure 6 (B) is a schematic cross-sectional view of the platform in the embodiment.

[0029] Figure 7 This is a schematic cross-sectional view used to illustrate the details of the first pressing device in the embodiment.

[0030] Figure 8 This is a schematic cross-sectional view used to illustrate the details of the first pressing device in the embodiment.

[0031] Figure 9 This is a schematic diagram of the processing apparatus used to illustrate a variation of the embodiment 1.

[0032] Figure 10 This is a schematic diagram of the processing apparatus used to illustrate a variation of the embodiment, Example 2.

[0033] Figure 11 This is a schematic diagram illustrating the trimmer used to explain the implementation method.

[0034] Figure 12 This is a schematic diagram illustrating an example of control used to explain an implementation method.

[0035] Symbol Explanation

[0036] 1: Processing device

[0037] 10: Taiwan

[0038] 10a: Upper surface

[0039] 11: Spray outlet

[0040] 20: Rotating device

[0041] 30a: First head

[0042] 33: Buffer plate

[0043] 34: Base plate

[0044] 38: Holding plate

[0045] 40a: Second head

[0046] 43: Buffer plate

[0047] 44: Base plate

[0048] 48: Holding plate

[0049] 61: Electromagnetic actuator

[0050] 70a: First swing device

[0051] 72a: Swing axis

[0052] 80a: Second swing device

[0053] 82a: Swing axis

[0054] 100: Control device

[0055] Pd1: First treatment pad

[0056] Pd2: Second treatment pad

[0057] RM: Outer perimeter area

[0058] Wf: substrate

[0059] Wfa: Processed surface

[0060] XL1: First central axis

[0061] XL2: Second central axis. Detailed Implementation

[0062] (Implementation Method)

[0063] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Furthermore, the drawings are schematically illustrated to facilitate understanding of the features, and the dimensions and proportions of the constituent elements are not limited to the actual dimensions. Additionally, the orthogonal coordinates XYZ are shown in the drawings as needed. In this orthogonal coordinate system, the Z direction corresponds to upward, and the -Z direction corresponds to downward (the direction of gravity).

[0064] Figure 1 This is a schematic diagram showing the main structure of the processing apparatus 1 of this embodiment. The processing apparatus 1 of this embodiment is configured to perform a predetermined process on a substrate Wf. As for this predetermined process, it is not particularly limited as long as a processing pad can be used to process the substrate Wf; known processes such as polishing and cleaning can be used. In this embodiment, polishing is used as an example of the predetermined process. Furthermore, the specific example of this polishing is not particularly limited; chemical mechanical polishing (CMP) or other mechanical polishing methods can be used. In this embodiment, chemical mechanical polishing is used as an example of the polishing method.

[0065] Figure 1 The processing device 1 shown in the example includes a platform 10, a platform rotating device 20, multiple heads, multiple head rotating devices, multiple pressing devices, multiple swinging devices, a processing liquid supply device 90, a control device 100, and a sensor group 110. Figure 2 This is a schematic top view used to illustrate the swinging of multiple heads. Furthermore, in Figure 2 The diagrams of the head rotation device, pressing device, etc., are omitted. Figure 3 This is a schematic top view showing a state where multiple heads are not located above platform 10.

[0066] Reference Figure 1 , Figure 2 and Figure 3 As an example, the plurality of heads in this embodiment includes four heads (first head 30a, second head 40a, third head 30b, and fourth head 40b). Additionally, as an example, the plurality of head rotating devices in this embodiment includes four head rotating devices (first head rotating device 50a, second head rotating device 55a, third head rotating device 50b, and fourth head rotating device 55b). Furthermore, as an example, the plurality of pressing devices in this embodiment includes four pressing devices (first pressing device 60a, second pressing device 65a, third pressing device 60b, and fourth pressing device 65b). Additionally, as an example, the plurality of swinging devices in this embodiment includes four swinging devices (first swinging device 70a, second swinging device 80a, third swinging device 70b, and fourth swinging device 80b).

[0067] Reference Figure 1 The platform 10 is configured to hold the substrate Wf. Specifically, in this embodiment, at least when a predetermined process is performed on the substrate Wf (hereinafter referred to as "substrate processing" or simply "processing"), the platform 10 holds the substrate Wf on its upper surface with the processed surface Wfa facing upwards. Furthermore, in Figure 2 In this example, the area of ​​the substrate Wf is shown to be smaller than the area of ​​the stage 10, but it is not limited to this. The area of ​​the substrate Wf may also be the same as the area of ​​the stage 10 (i.e., the substrate Wf may also have the same diameter as the stage 10).

[0068] There is no particular limitation on the specific method by which the stage 10 holds the substrate Wf, but as an example, the stage 10 in this embodiment holds the substrate Wf by means of a vacuum chuck (details of the vacuum chuck method will be described later).

[0069] The specific shape of the substrate Wf is not particularly limited; it can be circular, square (quadrilateral, etc.), or other shapes. As an example, the substrate Wf in this embodiment is circular.

[0070] Furthermore, when the substrate Wf is placed on the stage 10, a liquid film can be formed on the upper surface of the stage 10 by supplying water from a water supply mechanism. Then, the substrate Wf is placed on the upper surface of the stage 10 where the liquid film is formed, and the substrate Wf is held on the stage 10 by a vacuum clamp. In this case, the spray nozzle 11 described later can be used as the water supply mechanism. Figure 6 Alternatively, a water supply nozzle (not shown) can be used to supply water to the upper surface of the stage 10. In this way, by placing the substrate Wf on the upper surface of the stage 10 where the liquid film is formed, scratches on the substrate Wf can be effectively suppressed.

[0071] Additionally, when the substrate Wf is placed on the stage 10, a process can be performed to align the center of the substrate Wf with the center of the stage 10 (referred to as "centering process of the substrate Wf"). In this case, for example, a prescribed centering device can be used to perform the centering process of the substrate Wf (as an example, the device described in Japanese Patent Application Publication No. 2021-122902, etc.). Specifically, this centering device is configured such that multiple such devices are arranged to surround the substrate Wf, and the center of the substrate Wf is aligned with the center of the stage 10 by pressing the outer periphery of the substrate Wf disposed on the stage 10 toward the center of the stage 10. Furthermore, after the centering process of the substrate Wf is performed, the substrate Wf can be held on the stage 10 by, for example, a vacuum chuck. In addition, the centering process can also be performed when there is a liquid film between the substrate Wf and the stage 10.

[0072] The table rotation device 20 is configured to rotate the table 10 during processing. Specifically, as an example, the table rotation device 20 of this embodiment includes a table rotation shaft 21 and a table drive device 22. The table rotation shaft 21 is connected to the table 10, and the table drive device 22 is configured to rotate the table rotation shaft 21. The table drive device 22 includes, for example, a known drive device such as a motor. Furthermore, in Figure 1 In the example shown, “R1” illustrates one example of the rotation direction of the stage rotation axis 21.

[0073] Reference Figure 1 and Figure 2 The first head 30a is configured to mount a first processing pad Pd1. Furthermore, the first head 30a is configured to contact the first processing pad Pd1 with the surface Wfa of the substrate Wf to be processed. The second head 40a is configured to mount a second processing pad Pd2. The second head 40a is configured to contact the second processing pad Pd2 with the surface Wfa of the substrate Wf to be processed.

[0074] The third head 30b is configured to mount a third processing pad Pd3. The third head 30b is configured such that the third processing pad Pd3 contacts the surface Wfa of the substrate Wf to be processed. The fourth head 40b is configured to mount a fourth processing pad Pd4. The fourth head 40b is configured such that the fourth processing pad Pd4 contacts the surface Wfa of the substrate Wf to be processed.

[0075] The plurality of processing pads (Pd1, Pd2, Pd3, Pd4) in this embodiment are components used to process the surface Wfa to be processed (for example, polishing) by sliding it relative to the surface Wfa to be processed on the substrate Wf. The specific type of these processing pads is not particularly limited, and processing pads used in known substrate processing can be used.

[0076] In this embodiment, the area of ​​each of the plurality of processing pads (Pd1, Pd2, Pd3, Pd4) is smaller than the area of ​​the surface Wfa to be processed on the substrate Wf (in this embodiment, the upper surface of the substrate Wf). According to this structure, compared to the case where the area of ​​the processing pads is greater than or equal to the area of ​​the surface Wfa to be processed on the substrate Wf, the surface Wfa to be processed on the substrate Wf can be easily and locally polished using the processing pads.

[0077] Furthermore, as an example, the area of ​​the first processing pad Pd1 in this embodiment is larger than the area of ​​the second processing pad Pd2. In other words, the area of ​​the second processing pad Pd2 is smaller than the area of ​​the first processing pad Pd1. Similarly, the area of ​​the third processing pad Pd3 is larger than the area of ​​the fourth processing pad Pd4. In addition, the area of ​​the third processing pad Pd3 is larger than the area of ​​the second processing pad Pd2.

[0078] Furthermore, the area ratio of the first processing pad Pd1 to the third processing pad Pd3 is not particularly limited, but as an example, in this embodiment, the area of ​​the first processing pad Pd1 is the same as the area of ​​the third processing pad Pd3. Similarly, the area ratio of the second processing pad Pd2 to the fourth processing pad Pd4 is not particularly limited, but as an example, in this embodiment, the area of ​​the second processing pad Pd2 is the same as the area of ​​the fourth processing pad Pd4. However, this is not a limitation; the area of ​​the first processing pad Pd1 can be larger or smaller than the area of ​​the third processing pad Pd3. Likewise, the area of ​​the second processing pad Pd2 can be larger or smaller than the area of ​​the fourth processing pad Pd4.

[0079] Furthermore, if we take numerical examples of area ratios, for instance, the area of ​​the first processing pad Pd1 and the third processing pad Pd3 relative to the area of ​​the processed surface Wfa of the substrate Wf can each be 10% or less (for example, 5% to 10%). Additionally, the area of ​​the second processing pad Pd2 (or the fourth processing pad Pd4) relative to the area of ​​the first processing pad Pd1 (or the third processing pad Pd3) can be 70% or less (for example, 20% to 70%). However, this is just one example of an area ratio, and the specific area ratio can be appropriately set according to the type of substrate Wf, etc.

[0080] Furthermore, as described above, in this embodiment, the area of ​​the first processing pad Pd1 is larger than the area of ​​the second processing pad Pd2, and the area of ​​the third processing pad Pd3 is larger than the area of ​​the fourth processing pad Pd4, but this structure is not limited to this. The areas of the plurality of processing pads (Pd1, Pd2, Pd3, Pd4) in the processing apparatus 1 may also be the same value.

[0081] Furthermore, as described above, the processing device 1 of this embodiment has four heads as an example, but is not limited to this structure. The processing device 1 may have at least two heads (for example, a first head 30a and a second head 40a). That is, the processing device 1 may, for example, have no heads other than the first head 30a and the second head 40a, or it may have one or more heads other than the first head 30a and the second head 40a.

[0082] Multiple head rotating devices (50a, 55a, 50b, 55b) are configured to rotate multiple heads (30a, 40a, 30b, 40b) respectively during processing.

[0083] Specifically, as an example, in this embodiment, the first head rotating device 50a is connected to the first head 30a via a head rotating shaft 51a, and the first head 30a is rotated by rotating the head rotating shaft 51a. As an example, in this embodiment, the second head rotating device 55a is connected to the second head 40a via a head rotating shaft 56a, and the second head 40a is rotated by rotating the head rotating shaft 56a. As an example, in this embodiment, the third head rotating device 50b is connected to the third head 30b via a head rotating shaft 51b, and the third head 30b is rotated by rotating the head rotating shaft 51b. As an example, in this embodiment, the fourth head rotating device 55b is connected to the fourth head 40b via a head rotating shaft 56b, and the fourth head 40b is rotated by rotating the fourth head 40b.

[0084] In addition, Figure 1 In this example, "R2" illustrates one direction of rotation for the multiple heads. In this embodiment, as an example, the direction of rotation for the multiple heads is the same as the direction of rotation for the stage 10.

[0085] Each of the multiple head rotation devices (50a, 55a, 50b, 55b) is equipped with a known drive device, such as a motor. The structure of such a head rotation device is the same as that of the known head rotation devices disclosed in Patent Documents 1 and 2, therefore further detailed description is omitted.

[0086] The first pressing device 60a is configured to apply pressing force to the first head 30a during processing. The second pressing device 65a is configured to apply pressing force to the second head 40a during processing. The third pressing device 60b is configured to apply pressing force to the third head 30b during processing. The fourth pressing device 65b is configured to apply pressing force to the fourth head 40b during processing. These pressing devices are connected to the arms (arms 71a, 81a, 71b, 81b) corresponding to their respective pressing devices via connecting members 120. Further details of these pressing devices will be described later.

[0087] Multiple swinging devices (70a, 80a, 70b, 80b) are configured to swing multiple heads (30a, 40a, 30b, 40b) respectively during processing.

[0088] Specifically, as an example, the first swinging device 70a of this embodiment includes: an arm 71a that extends horizontally and is connected to a first head 30a via a head rotation shaft 51a; a swing shaft 72a (first swing shaft) that is connected to the end of the arm 71a and extends vertically; and a drive device 73a configured to drive the swing shaft 72a to swing. The first swinging device 70a swings the arm 71a in the horizontal plane with the swing shaft 72a as the center, thereby causing the first head 30a to swing parallel to the upper surface of the stage 10 (i.e., parallel to the processed surface Wfa of the substrate Wf).

[0089] Additionally, as an example, the second swinging device 80a of this embodiment includes: an arm 81a that extends horizontally and is connected to the second head 40a via a head rotation shaft 56a; a swing shaft 82a (second swing shaft) that is connected to the end of the arm 81a and extends vertically; and a drive device 83a configured to drive the swing shaft 82a to swing. The second swinging device 80a swings the arm 81a in the horizontal plane with the swing shaft 82a as the center, thereby causing the second head 40a to swing parallel to the upper surface of the platform 10.

[0090] Furthermore, as an example, the third swinging device 70b of this embodiment includes: an arm 71b that extends horizontally and is connected to the third head 30b via a head rotation shaft 51b; a swing shaft 72b (third swing shaft) that is connected to the end of the arm 71b and extends vertically; and a drive device 73b configured to drive the swing shaft 72b to swing. The third swinging device 70b swings the arm 71b in the horizontal plane with the swing shaft 72b as the center, thereby causing the third head 30b to swing parallel to the upper surface of the platform 10.

[0091] Additionally, as an example, the fourth swinging device 80b of this embodiment includes: an arm 81b extending horizontally and connected to the fourth head 40b via a head rotation shaft 56b; a swing shaft 82b (fourth swing shaft) connected to the end of the arm 81b and extending vertically; and a drive device 83b configured to drive the swing shaft 82b to swing. The fourth swinging device 80b swings the arm 81b in the horizontal plane with the swing shaft 82b as the center, thereby causing the fourth head 40b to swing parallel to the upper surface of the platform 10.

[0092] Furthermore, the structure of these swinging devices is the same as that of the known swinging devices disclosed in Patent Documents 1 and 2, so further detailed descriptions are omitted.

[0093] Furthermore, the specific dimensions of the multiple arms are not particularly limited. However, for example, the length of the arm can be set such that at least one pad selected from the multiple processing pads can process the entire surface of the surface to be processed, Wfa, of the substrate Wf (i.e., the entire surface of the surface to be processed, Wfa, from the center to the outer edge). To illustrate this, for example, the length of arm 71a can be set such that at least the first processing pad Pd1 can process (polish) the entire surface of the surface to be processed, Wfa, of the substrate Wf.

[0094] Reference Figure 1 The processing liquid supply device 90 is used to supply processing liquid (for example, an abrasive slurry in this embodiment) to the substrate Wf during processing. In this embodiment, the processing device 1 abrades the surface Wfa of the substrate Wf while rubbing it with processing pads (Pd1, Pd2, Pd3, Pd4) in the presence of the abrasive slurry. The abrasive slurry is composed of a liquid containing a processing agent such as abrasive particles. For example, the processing liquid supply device 90 of this embodiment is configured to supply the abrasive slurry to the surface Wf of the substrate Wf from the processing liquid supply nozzle 91.

[0095] Furthermore, the processing liquid supply nozzle 91 can be configured to oscillate together with the head. Specifically, in this case, the processing liquid supply nozzle 91 can be connected to at least one arm selected from a plurality of arms (arms 71a, 71b, 81a, 81b), and supplies polishing slurry while oscillating integrally with the connected arm. In addition, in this case, the processing liquid supply device 90 can include a plurality of processing liquid supply nozzles 91. Furthermore, the processing liquid supply nozzle 91 can also be configured to supply polishing slurry to the substrate Wf located upstream of the substrate Wf in the rotational direction compared to at least one head selected from the plurality of heads.

[0096] Furthermore, in the case of the processing apparatus 1, for example, a cleaning apparatus for cleaning substrate Wf, the processing liquid supply apparatus 90 can be configured to supply cleaning liquid (this is also an example of processing liquid).

[0097] Sensor group 110 is a sensor used to detect various physical parameters of processing device 1. The parameters detected by sensor group 110 are transmitted to control device 100.

[0098] As an example, the sensor group 110 of this embodiment includes a pressure sensor for detecting the pressing force applied by each pressing device. As an example of this pressure sensor, this embodiment includes a load unit 112 (the symbol will be described later). Figure 7example in).

[0099] In addition, the sensor group 110 includes a swing speed sensor for detecting the swing speed (rotation speed during swing) of each head, a rotation speed sensor for detecting the rotation speed (self-rotation speed) of each head, and a rotation speed sensor for detecting the rotation speed of the stage 10.

[0100] In addition, the sensor group 110 also includes a phase sensor for detecting the swing phase (rotation phase) of each head, a phase sensor for detecting the rotation phase of the stage 10, etc.

[0101] In addition, the sensor group 110 also includes a film thickness sensor 111 for detecting the film thickness of the substrate Wf before and / or during the substrate processing. As an example, the film thickness sensor 111 of this embodiment is disposed in at least one of the plurality of arms (71a, 71b, 81a, 81b) of the processing device 1.

[0102] The film thickness sensor 111 can also detect the film thickness of a designated representative portion of the substrate Wf. Alternatively, the film thickness sensor 111 can also detect the overall film thickness of the substrate Wf (the overall film thickness from the center to the outer edge). When detecting the overall film thickness of the substrate Wf using the film thickness sensor 111, the sensor group 110 may, for example, include multiple film thickness sensors 111. Alternatively, the film thickness sensor 111 may be disposed on at least one of multiple arms (swing arms) of the processing device 1, and the overall film thickness of the substrate Wf may be measured while swinging integrally with the arm on which the film thickness sensor 111 is disposed.

[0103] Alternatively, if the processing device 1 has three or more arms, a film thickness sensor 111 can be installed in place of a head on one of the arms. In this case, the film thickness sensor 111 can also be oscillated by the arm, thereby making it easy to detect the overall film thickness of the substrate Wf.

[0104] Furthermore, the processing apparatus 1 may also include an atomizing device (not shown) configured to spray an atomized liquid (as an example, "nitrogen-containing water") toward the upper surface of the stage 10. Specifically, in this case, for example, the atomizing device may be disposed on at least one of a plurality of arms, and while swinging integrally with the arms, spray the atomized liquid toward the upper surface of the stage 10 (here, the upper surface of the substrate Wf if a substrate Wf is disposed).

[0105] The control device 100 is a device for comprehensively controlling the operation of the processing device 1. Specifically, the control device 100 of this embodiment includes a microcomputer. This microcomputer includes a processor 101, a storage device 102 as a non-transitory storage medium, etc. In the control device 100, the processor 101 controls the operation of the processing device 1, for example, based on instructions of a program stored in the storage device 102.

[0106] Furthermore, during processing, the control device 100 of this embodiment operates based on parameters detected by the sensor group 110, such as the control console rotation device 20 (specifically, the console drive device 22), each head rotation device, each pressing device, and each swing device (specifically, the drive device of the swing device).

[0107] In addition, the control device 100 can perform all the steps of substrate processing automatically based on the program, or it can perform all or part of the steps of substrate processing based on the instructions of the user (operator).

[0108] Next, refer to Figure 2 and Figure 3 The details of the swing axis and the swing of the multiple heads are explained. First, the multiple swing axes (72a, 82a, 72b, 82b) of this embodiment are arranged in the area outside the stage 10 when viewed from above.

[0109] Here, we assume that when looking down at the observation platform 10, there is a first central axis XL1 (extending along the X-axis) passing through the center of the platform 10 and a second central axis XL2 (extending along the Y-axis) passing through the center of the platform 10 and perpendicular to the first central axis XL1.

[0110] In this embodiment, the swing axes 72a and 72b are disposed in one of the two regions divided by the second central axis XL2 (the region on the X-direction side of the second central axis XL2). Additionally, the swing axes 82a and 82b are disposed in the other of the two regions divided by the second central axis XL2 (the region on the -X-direction side of the second central axis XL2).

[0111] In addition, the swing shafts 72a and 82a of this embodiment are disposed in one of the two regions divided by the first central axis XL1 (compared to the region on the -Y direction side of the first central axis XL1), and the swing shafts 72b and 82b are disposed in the other region of the two regions divided by the first central axis XL1 (compared to the region on the Y direction side of the first central axis XL1).

[0112] According to this embodiment, the multiple swing axes (72a, 82a, 72b, 82b) are arranged as described above, thus easily suppressing interference between the multiple arms connected to these swing axes during swinging. Furthermore, when mounting or removing the substrate Wf from the stage 10 (i.e., "mounting or removing the substrate Wf"), or during "maintenance" such as replacing the processing pad, the head and arms can be easily moved as described later. Figure 3 That's how it moves. Therefore, it's easy to prevent multiple swing axes and multiple arms from becoming obstacles to these operations.

[0113] Furthermore, in this embodiment, the swing shafts 72a, 82a, 72b, and 82b are positioned near the first central axis XL1. In addition, in this embodiment, "positions near the central axis" specifically means that the distance between the center of the component and the central axis is less than one-third of the radius of the upper surface 10a of the platform 10.

[0114] Furthermore, as an example, the swing angle range (α1) of the first head 30a, the swing angle range (α2) of the second head 40a, the swing angle range (α3) of the third head 30b, and the swing angle range (α4) of the fourth head 40b in this embodiment are all 90°. However, the swing angle range of these heads is not limited to 90°; it can be smaller or larger than 90°. Additionally, the swing angle ranges of the multiple heads may not be the same value, or they may be different values. Furthermore, at least one of the first head 30a and the third head 30b may be set to have a swing angle range greater than 90% to enable grinding to the center of the substrate Wf.

[0115] like Figure 2 As illustrated, the swinging devices (70a, 80a, 70b, 80b) can also be configured to position the head (30a, 40a, 30b, 40b) at a predetermined location on the upper surface 10a of the platform 10 (in... Figure 2 The head swings by reciprocating between a designated part near the first central axis XL1 and a designated part on the outer side of the platform 10.

[0116] Alternatively, the first swing device 70a and the third swing device 70b can also swing in a manner that brings the first head 30a and the third head 30b closer to or further away from each other. Similarly, the second swing device 80a and the fourth swing device 80b can also swing in a manner that brings the second head 40a and the fourth head 40b closer to or further away from each other.

[0117] Furthermore, in this embodiment, the head is temporarily positioned outside the platform 10 (i.e., extending further outward than the platform 10) during the swinging motion, but this structure is not limited to this. The head may also swing in a manner that reciprocates between a predetermined portion of the upper surface 10a of the platform 10 and the outer edge portion of the upper surface 10a of the platform 10, so as not to extend beyond the outer side of the platform 10.

[0118] Furthermore, in the case of this embodiment where the head extends to the outside of the platform 10 during swinging, the processing device 1 may also include a support platform 17 (this is in...). Figure 3 (As illustrated in the example), the support platform 17 is used to support the head that extends outward from the lower side to the outer side of the platform 10. When not in use, the support platform 17 can be stored inside the processing device 1 (e.g., on the lower side of the platform 10). Furthermore, when the processing device 1 is equipped with the support platform 17, it is preferable that the outer diameter of the platform 10 is the same as the outer diameter of the substrate Wf.

[0119] In addition, such as Figure 11 As illustrated, the processing apparatus 1 may include trimmers 130a, 130b, 130c, and 130d for trimming the processing pads (Pd1 to Pd4). Furthermore, trimmer 130a is for the first processing pad Pd1, trimmer 130b is for the second processing pad Pd2, trimmer 130c is for the third processing pad Pd3, and trimmer 130d is for the fourth processing pad Pd4. The processing apparatus 1 can trim the processing pads by bringing them into contact with the surfaces of the trimmers and rotating the processing pads.

[0120] also, Figure 11 The dressing device illustrated is merely one example of a dressing device; the actual placement and size of the dressing device in the processing apparatus 1 are not limited to this. Figure 11 As illustrated. In addition, when the processing device 1 has both a support table 17 and a trimmer, the trimmer is preferably positioned in a position that does not overlap with the support table 17 (so as not to obstruct the position of the support table 17).

[0121] In addition, such as Figure 2 As illustrated, when multiple heads are located above stage 10 at a time before the installation or removal of substrate Wf, or at a time before maintenance work, such as Figure 3As illustrated, the control device 100 preferably controls multiple swinging devices to position multiple heads outside the stage 10. In this case, arms 71a and 81a swing in a so-called "opening" manner, as do arms 71b and 81b. Thus, when the multiple heads are positioned outside the stage 10, the arms, heads, and swinging axes do not obstruct the installation, removal, or maintenance of the substrate Wf, thereby enabling easy installation, removal, and maintenance of the substrate Wf.

[0122] According to the embodiment described above, the substrate Wf can be processed using multiple processing pads (specifically, at least the first processing pad Pd1 and the second processing pad Pd2). Therefore, compared to processing the substrate Wf using only a single processing pad, the substrate Wf can be processed (e.g., polishing) in a shorter time.

[0123] Furthermore, according to this embodiment, the relatively large first processing pad Pd1 undertakes the processing (specifically, polishing) of a large area of ​​the substrate Wf, while the relatively small second processing pad Pd2 can also undertake the localized processing of the substrate Wf. As a result, the processing rate (specifically, polishing rate) can be guaranteed by the first processing pad Pd1, and the uniformity of the film thickness of the substrate Wf can be ensured by the second processing pad Pd2.

[0124] The following describes a specific example of the control of the control device 100. For example, the control device 100 may also control the processing device 1 (specifically, the oscillating device of the processing device 1) to integrally grind the processed surface Wfa of the substrate Wf using at least one processing pad selected from a plurality of processing pads (referred to as a "specific processing pad"). Alternatively, in this case, the control device 100 may also control the processing device 1 to locally grind the portion of the substrate Wf on the processed surface Wfa of the substrate Wf to a relatively thick portion of the substrate Wf as a whole using at least one processing pad selected from a plurality of processing pads other than the specific processing pad.

[0125] Specifically, in this case, before and / or during the processing of substrate Wf, the control device 100 obtains the overall film thickness of substrate Wf based on the detection results of film thickness sensor 111, and also obtains the portion of substrate Wf with a relatively thicker film thickness. Then, during the processing of substrate Wf, the control device 100 can grind the entire surface (all surface) of the substrate Wf to be processed using, for example, the first processing pad Pd1 of the first head 30a (and / or the third processing pad Pd3 of the third head 30b), while simultaneously grinding the portion of substrate Wf with a relatively thicker film thickness (thicker than other portions) using, for example, the second processing pad Pd2 of the second head 40a (and / or the fourth processing pad Pd4 of the fourth head 40b).

[0126] Based on this structure, the uniformity of film thickness on the substrate Wf can be achieved as early as possible. In particular, the uniformity of film thickness distribution in the circumferential direction of the substrate Wf can be achieved as early as possible. As a result, the overall processing time of the substrate Wf can be shortened.

[0127] Alternatively, the control device 100 can control the pressing force of at least one pressing device selected from a plurality of pressing devices by adjusting the pressing force according to the change in film thickness of the substrate Wf, based on the film thickness of the substrate Wf. With this structure, uniformity of film thickness of the substrate Wf can be achieved as early as possible.

[0128] If we take a specific example, such as the example above, in the case where the portion of the substrate Wf with a relatively thick film thickness is locally ground by the second processing pad Pd2 of the second head 40a, it is also possible to vary the pressure applied to the second head 40a according to the film thickness of the substrate Wf, such that the thicker the film thickness of the substrate Wf, the stronger the pressure applied to the second head 40a.

[0129] Furthermore, in this case, for example, a control mapping that associates the pressing force applied by the pressing device with the film thickness of the substrate Wf can be pre-stored in the storage device 102 of the control device 100. This control mapping is, for example, defined such that the thicker the film thickness of the substrate Wf, the stronger the pressing force. During processing, the control device 100 obtains the film thickness of the substrate Wf based on the detection result of the film thickness sensor 111, obtains a pressing force corresponding to the obtained film thickness from the control mapping, and controls the pressing device to obtain the obtained pressing force. Thus, the pressing force can be easily varied according to the film thickness of the substrate Wf.

[0130] Alternatively, if the control device 100 obtains (detects) a relatively thick portion of the substrate Wf based on the detection result of the film thickness sensor 111 during processing, the pressing device (second pressing device 65a) can be controlled such that the pressing pressure applied to the processing pad (e.g., the second processing pad Pd2) that grinds the relatively thick portion of the substrate Wf is stronger than, for example, the pressing pressure applied to the first processing pad Pd1. In this structure, the pressing pressure can also be easily varied according to the film thickness of the substrate Wf.

[0131] Furthermore, when there are multiple areas with a thicker film, the control device 100 can use the second processing pad Pd2 to locally grind one selected area from the multiple areas, and use the fourth processing pad Pd4 to locally grind one selected area from the remaining areas. That is, the thicker areas of the substrate Wf can be locally ground by the second processing pad Pd2 and the fourth processing pad Pd4 sharing the workload.

[0132] Alternatively, the control device 100 can also control the pressing force applied by at least one pressing device selected from a plurality of pressing devices based on the rotation phase control of the stage 10.

[0133] Specifically, in this case, for example, a control map that associates the pressing force applied by the pressing device with the rotation phase of the stage 10 can be pre-stored in the storage device 102 of the control device 100. This control map, for example, is configured to vary the pressing force applied by the pressing device according to the rotation phase of the stage 10. During processing, the control device 100 obtains the rotation phase of the stage 10 based on the detection results of the sensor group 110 (specifically, a phase sensor), and obtains the pressing force corresponding to the obtained rotation phase from the control map. The control device 100 controls the pressing device to obtain the obtained pressing force. Thus, the pressing force of the pressing device can be easily controlled based on the rotation phase of the stage 10.

[0134] Furthermore, the film thickness distribution information of the substrate Wf can also be obtained using information measured, for example, by a film thickness measuring device (not shown) external to the processing apparatus 1. In this case, the film thickness distribution information of the substrate Wf measured by the film thickness measuring device is stored in the storage device 102 of the control device 100 of the processing apparatus 1. For example, when the substrate Wf is placed on the stage 10, by always arranging the cut on the substrate Wf at a predetermined angle on the stage 10, the polar coordinates in the film thickness distribution information of the substrate Wf can be correlated with the rotation phase of the stage 10.

[0135] Alternatively, the control device 100 may control the processing device 1 as follows. First, in Figure 12 The diagram below illustrates this control. Figure 12The example shows "thick film regions (A1, A2, A3, A4)" where the film thickness of the substrate Wf is thicker than the reference value.

[0136] For example, for the second head 40a, the control device 100 can increase the pressing pressure of the second head 40a when the thick film region A1 comes below it. Similarly, for the fourth head 40b, the control device 100 can increase the pressing pressure of the fourth head 40b when the thick film region A1 comes below it. In this case, the control device 100 can cause the heads 40a and 40b to swing within a necessary angle range while grinding the thick film region A1. Furthermore, for the second head 40a or the fourth head 40b, the control device 100 can move the second head 40a or the fourth head 40b to a swing position corresponding to other regions (e.g., thick film region A4) after the planarization of the thick film region A1 has been completed, and continue grinding.

[0137] For the third head 30b, the control device 100 can increase the pressing pressure of the third head 30b when the thick film regions A2 and A3 are below it. At this time, even assuming that the third head 30b is larger than the thick film regions A2 and A3, by arranging the third head 30b in a manner that spans the outer peripheral region of the substrate Wf and the support stage 17, the thick film regions A2 and A3 can be ground preferentially.

[0138] Furthermore, the control device 100 can also control the first head 30a to perform uniform grinding from the center of the substrate Wf to the outer periphery. Additionally, the control device 100 can also increase the pressing pressure of the first head 30a when the thick film region A4 comes below it. Furthermore, grinding of the outer periphery of the substrate Wf, where thick film regions A2 and A3 are located, can also be performed by the third head 30b, and the first head 30a can perform grinding within a swing range that is closer to the inner edge of the outer periphery.

[0139] Furthermore, when grinding is not required on the entire surface from the center to the outer periphery of the substrate Wf, each head can be changed to a low pressing pressure at a predetermined time (e.g., a time when the pressing pressure is not increased), or the head can be moved away from the substrate Wf.

[0140] Thus, in order to perform localized massage by increasing the pressure of the head when it reaches the lower part of the thick film region, it is preferable to have a good change in pressure responsiveness. The structure for this purpose will be described later. In addition, when there is a "thin film region (a region where the film thickness is lower than the reference value)" in the substrate Wf, the control device 100 can also control each head to grind the region outside the thin film region.

[0141] However, it is not limited to the structure described above. For example, the control device 100 can control the pressing force of the pressing device to be constant during processing. In addition, in this case, the control device 100 can, for example, maintain the pressing force of the pressing device at a constant (pre-set value) while varying the rotation speed of the stage 10.

[0142] Specifically, in this case, the control device 100, for example, during processing, brings at least one selected processing pad (for example, the second processing pad Pd2) from a plurality of processing pads into contact with a relatively thick portion of the substrate Wf, and maintains the pressing pressure of the second processing pad Pd2 at a constant level. In this state, the rotational speed of the stage 10 is lower than a reference value (the normal rotational speed), and the contact time between the substrate Wf and the processing pad is extended. In this case, the relatively thick portion of the substrate Wf can also be specifically ground using the second processing pad Pd2. Alternatively, instead of changing the rotational speed of the stage 10, the rotational speed of the second processing pad Pd2 can also be varied.

[0143] Next, we will explain the surrounding structure of the head. Figure 4 (A) is a schematic diagram illustrating the peripheral structure of the first head 30a. Figure 4 (B) is a schematic diagram illustrating the peripheral structure of the second head 40a. As an example, the first head 30a of this embodiment includes: a retaining plate 38 on which a first processing pad Pd1 is mounted; a base plate 34 disposed above the retaining plate 38; and a rubber buffer plate 33 disposed between the retaining plate 38 and the base plate 34.

[0144] In addition, as an example, the retaining plate 38 of this embodiment includes a pad 31 on which the first processing pad Pd1 is mounted and a pad retainer 32 on which the first pad is mounted.

[0145] Additionally, as an example, the second head 40a of this embodiment includes: a retaining plate 48 on which a second processing pad Pd2 is mounted; a base plate 44 disposed above the retaining plate 48; and a rubber buffer plate 43 disposed between the retaining plate 48 and the base plate 44.

[0146] In addition, as an example, the retaining plate 48 of this embodiment includes a pad 41 on which the second processing pad Pd2 is mounted and a pad retainer 42 on which the pad 41 is mounted.

[0147] Furthermore, as an example, the first treatment pad Pd1 is mounted to the pad platform 31 via an adhesive. As an example, the pad platform 31 is mounted to the pad holder 32 by magnets or the like. As an example, the pad holder 32, the buffer plate 33, and the base plate 34 are connected to each other by fastening components such as bolts.

[0148] Similarly, as an example, the second treatment pad Pd2 is mounted to the pad platform 41 via an adhesive. As an example, the pad platform 41 is mounted to the pad holder 42 by a magnet or the like. As an example, the pad holder 42, the buffer plate 43, and the base plate 44 are connected to each other by fastening components such as bolts.

[0149] Furthermore, the third head 30b of this embodiment also has the same structure as the first head 30a described above. That is, the third head 30b also includes a retaining plate 38 (but retains the third processing pad Pd3), a base plate 34, and a rubber buffer plate 33. Additionally, the fourth head 40b of this embodiment also has the same structure as the second head 40a described above. That is, the fourth head 40b also includes a retaining plate 48 (but retains the fourth processing pad Pd4), a base plate 44, and a rubber buffer plate 43.

[0150] Figure 5 (A) is a schematic top view of the buffer plate 33. Figure 5 (B) is a schematic bottom view of the buffer plate 33. As described above, when the buffer plate 33 is installed using bolts, a through hole 35 may be provided in the buffer plate 33 for the bolts used to connect the base plate 34 and the buffer plate 33, as well as the bolts used to connect the pad retainer 32 and the buffer plate 33, to be inserted. Additionally, a countersunk hole 36 may be provided in the buffer plate 33 for accommodating the bolt head. With this structure, it is possible to prevent the bolt head from protruding outwards from the buffer plate 33.

[0151] Alternatively, the buffer plate 33 may be an annular shape with a through hole 37 in its central part. However, it is not limited to this structure, and the buffer plate 33 may also be a circular plate without the through hole 37.

[0152] The buffer plate 43 may also have the same structure as the buffer plate 33 described above. That is, the buffer plate 43 may also be provided with a through hole 35 for bolt insertion and a countersunk hole 36 for mounting the bolt head. Alternatively, the buffer plate 43 may be an annular shape with a through hole 37 in its central part. Or, the buffer plate 43 may be a circular plate shape without the through hole 37.

[0153] According to this embodiment, the first head 30a and the third head 30b are equipped with rubber buffer plates 33. Therefore, even when the head rotation axis is not strictly perpendicular to the stage 10, the tilt of the rotation axis can be absorbed by the buffer plates 33, thereby easily bringing the entire lower surface of the processing pad into contact with the substrate Wf. Furthermore, even when the surface of the substrate Wf periodically rises and falls due to the surface precision of the stage 10, the undulations of the substrate Wf surface can be absorbed by the buffer plates 33. Moreover, according to this structure, for example, compared to the case where the first head 30a and the third head 30b are equipped with "buffer members made of airbags (airbag-type buffer members)" instead of the buffer plates 33, the pressing force applied from the first pressing device 60a and the third pressing device 60b can be quickly transmitted to the first processing pad Pd2 and the third processing pad Pd3.

[0154] Similarly, according to this embodiment, the second head 40a and the fourth head 40b are provided with rubber buffer plates 43, thus making it easy for the entire lower surface of the processing pad to come into contact with the substrate Wf. Furthermore, according to this structure, for example, compared to the case where the second head 40a and the fourth head 40b are provided with air-cushion type buffer members instead of buffer plates 43, the pressing force applied from the second pressing device 65a and the fourth pressing device 65b can be quickly transmitted to the second processing pad Pd2 and the fourth processing pad Pd4.

[0155] Next, we will explain the surrounding structure of platform 10. Figure 6 (A) is a schematic top view of platform 10. Figure 6 (B) is a schematic cross-sectional view of platform 10. Furthermore, in Figure 6 In (B), the outer diameter of stage 10 is the same as the outer diameter of substrate Wf. When substrate Wf is held on stage 10 by a vacuum clamp, as... Figure 6 (A) and Figure 6 As illustrated in (B), a suction port 14 for drawing in air is provided on the platform 10. Specifically, this suction port 14 may, for example, be located at the center of the upper surface 10a of the platform 10. Additionally, refer to... Figure 6 (B) An exhaust port 15 for discharging the drawn air is provided on the lower surface of the platform 10. The exhaust port 15 is connected to a suction device (not shown) such as a vacuum pump via a piping (not shown). In addition, a gas passage 16 connecting the suction port 14 and the exhaust port 15 is provided inside the platform 10.

[0156] Furthermore, the number of suction ports 14 is not limited to one; for example, multiple suction ports 14 can be provided on the upper surface 10a of the platform 10. In addition, the shape of the suction ports 14 is not particularly limited; for example, various shapes can be used, such as circular shapes, annular shapes, shapes with multiple intersecting straight lines (e.g., cross shapes), polygonal shapes, and shapes formed by combining two or more shapes selected from these shapes.

[0157] After the substrate Wf is placed on the upper surface 10a of the stage 10, air can be drawn from the suction port 14, and the substrate Wf can be held on the upper surface 10a of the stage 10 by a vacuum chuck.

[0158] Furthermore, when the substrate Wf is held on the stage 10 using a vacuum chuck, a so-called "pin chuck method" can be used to hold the substrate Wf in order to maintain the holding force of the substrate Wf while dispersing the adsorption pressure applied to the substrate Wf. Specifically, in this case, multiple pins are arranged on the upper surface 10a of the stage 10 in an upward-protruding manner. The substrate Wf is disposed on the top (upper end) of these multiple pins. With the substrate Wf disposed on these multiple pins, the substrate Wf can be held on the stage 10 by drawing air from the suction port 14.

[0159] Additionally, refer to Figure 6 (A) and Figure 6 (B) In this embodiment, a plurality of nozzles 11 may be provided in the outer edge region RM of the upper surface 10a of the platform 10. These nozzles 11 are configured to spray liquid (for example, water in this embodiment) upwards. Specifically, the nozzles 11 are configured to spray liquid toward the lower surface of the substrate Wf disposed on the upper surface 10a of the platform 10 (i.e., the lower surface of the substrate Wf opposite to the upper surface 10a of the platform 10). In this embodiment, as an example, the plurality of nozzles 11 are arranged at equal intervals in the circumferential direction of the platform 10.

[0160] Furthermore, the outer edge region RM of the upper surface 10a refers to the region extending a predetermined distance from the outer edge (outermost end) of the upper surface 10a towards the center of the upper surface 10a (this outer edge region RM also includes the outer edge of the upper surface 10a). The specific value of this predetermined distance is not particularly limited, but for example, a value less than one-tenth of the diameter of the upper surface 10a can be used.

[0161] like Figure 6As illustrated in (B), a supply port 12 for supplying liquid (water) is provided on, for example, the lower surface of the stage 10. The supply port 12 is connected to a pressure conveying device (not shown) such as a liquid pump via a pipe (not shown). In addition, a liquid passage 13 is provided inside the stage 10, connecting the supply port 12 and a plurality of nozzles 11. The liquid (water) supplied to the supply port 12 is ejected from the plurality of nozzles 11 through the liquid passage 13. Furthermore, the plurality of nozzles 11 can, for example, continuously eject liquid from the stage from the start to the end of the processing of the substrate Wf.

[0162] According to this structure, by spraying liquid from multiple nozzles 11, foreign matter (such as polishing slurry) can be prevented from entering between the substrate Wf and the stage 10. Specifically, by spraying liquid (water) upward from the multiple nozzles 11, slurry that bypasses the edge of the substrate Wf can be discharged to the outside of the substrate Wf. Thus, foreign matter such as slurry can be prevented from entering the area further inside than the nozzles 11 and being sucked into the suction port 14. That is, the liquid sprayed upward from the multiple nozzles 11 acts as a "water seal" (or "liquid wall"). Thus, foreign matter can be prevented from entering between the substrate Wf and the stage 10.

[0163] Furthermore, the nozzle 11 is radially positioned inward compared to the outer edge of the substrate Wf disposed on the stage 10. When the nozzle 11 is positioned inward compared to the outer edge of the substrate Wf, to prevent the substrate Wf from completely sealing the nozzle 11 and thus suppressing the ejection of liquid from the nozzle 11, for example, the position (height position) of the nozzle 11 on the upper surface of the stage 10 can be located lower than other parts of the upper surface of the stage 10. Additionally, as described above, when the substrate Wf is held by a "pin clamping method," the nozzle 11 can be positioned lower than the upper ends of the multiple pins.

[0164] The surrounding structure of the pressing device will be described next. Figure 7 and Figure 8 This is a schematic cross-sectional view used to illustrate the details of the first pressing device 60a. Specifically, Figure 7 The peripheral structure of the first pressing device 60a is shown as an example. Additionally, Figure 8 It is Figure 7 An enlarged cross-sectional view of the first pressing device 60a. (Refer to...) Figure 7 and Figure 8 The first pressing device 60a includes an electromagnetic actuator 61, which is configured to apply pressing force to the first head 30a using electromagnetic force. As a specific example of the electromagnetic actuator 61, a "voice coil motor" is used in this embodiment.

[0165] Reference Figure 8Specifically, the electromagnetic actuator 61 (voice coil motor) of this embodiment includes a coil 61a and magnets (magnets 61b and 61c), which are configured to generate an electromagnetic force (F1). The electromagnetic actuator 61 is configured to apply the generated electromagnetic force (F1) as the pressing force described above to the first head 30a.

[0166] More specifically, in addition to the coil 61a and magnet described above, the electromagnetic actuator 61 of this embodiment includes a coil core 61d, a support plate 61e, an upper side plate 61f, a lower side plate 61g, and a spring 61h.

[0167] Coil 61a is wound around a cylindrical (in this embodiment, a bottomed cylindrical) coil core 61d. The lower end of coil core 61d (in this embodiment, the bottom) is connected to the upper surface of the lower side plate 61g. Coil 61a is electrically connected to a power supply 63, which is a current supply device, via wiring 62. Power supply 63 supplies current (I) to coil 61a upon receiving an instruction from, for example, control device 100.

[0168] The magnet has a pair of magnets, specifically magnet 61b (N pole) and magnet 61c (S pole).

[0169] The upper ends of magnets 61b and 61c are each connected to the support plate 61e. The support plate 61e is connected to the lower surface of the upper side plate 61f. That is, in this embodiment, magnets 61b and 61c are connected to the upper side plate 61f via the support plate 61e. Alternatively, the first pressing device 60a may also be a structure without the support plate 61e. In this case, magnets 61b and 61c can be directly connected to the upper side plate 61f.

[0170] As an example, the magnet 61b in this embodiment is cylindrical, has a space between it and the coil 61a, and is disposed on the outer side (outer periphery) of the coil 61a. Alternatively, the magnet 61b may also be a rod-shaped magnet extending in the vertical direction. In this case, for example, the electromagnetic actuator 61 includes a plurality of magnets 61b, which have a space between them and the coil 61a and are disposed on the outer side of the coil 61a.

[0171] As an example, the magnet 61c in this embodiment has a cylindrical shape. The magnet 61c is disposed inside the coil 61a, specifically inside the coil core 61d on which the coil 61a is wound. A magnetic field (B1) is formed between the magnet 61b and the magnet 61c, extending from the magnet 61b toward the magnet 61c. The coil 61a is disposed inside this magnetic field (B1).

[0172] The upper side plate 61f and the lower side plate 61g are connected to each other via a spring 61h. Therefore, the distance (vertical distance) between the upper side plate 61f and the lower side plate 61g can be varied. In this embodiment, the spring 61h is disposed on the outer side (outer peripheral side) of the magnet 61b.

[0173] Reference Figure 7 In this embodiment, the lower side plate 61g is connected to the first head rotating device 50a (specifically, the housing part of the first head rotating device 50a) via the load unit 112.

[0174] Reference Figure 8 When current (I) is supplied to the coil 61a of the electromagnetic actuator 61, according to Fleming's left-hand rule, the coil core 61d experiences a downward electromagnetic force (F1). As a result, the lower side plate 61g, which is connected to the coil core 61d, also experiences a downward force (F1). By transmitting the force (F1) experienced by the lower side plate 61g to the first head 30a via the head rotation shaft 51a, a pressing force can be applied to the first head 30a.

[0175] Using the above mechanism, the first pressing device 60a of this embodiment applies pressing force to the first head 30a. Furthermore, the structures of the second pressing device 65a, the third pressing device 60b, and the fourth pressing device 65b of this embodiment are the same as those of the first pressing device 60a. That is, the second pressing device 65a, the third pressing device 60b, and the fourth pressing device 65b of this embodiment also include an electromagnetic actuator 61, and are configured to apply pressing force to the head using the electromagnetic force generated by the electromagnetic actuator 61.

[0176] Here, as the pressing device, a known pressing mechanism such as a cylinder or a ball screw is considered as an alternative to the electromagnetic actuator 61. However, in the case of a cylinder, a pressure control device such as a regulator is needed to increase the internal pressure of the cylinder in order to generate the specified pressing force, thus requiring a certain amount of time before the specified pressing force is generated. Similarly, in the case of a ball screw, the ball screw needs to rotate a specified number of revolutions to generate the specified pressing force, thus requiring a certain amount of time before the specified pressing force is generated. Therefore, pressing mechanisms such as cylinders and ball screws are difficult to apply pressing force quickly.

[0177] In contrast, according to this embodiment, the pressing device includes an electromagnetic actuator 61. Therefore, compared to the case where the pressing device replaces the electromagnetic actuator 61 with a pressing mechanism such as a cylinder or ball screw, pressing force can be applied to the head more quickly. That is, according to this embodiment, the responsiveness of pressing force application can be improved.

[0178] Specifically, according to this embodiment, by allowing current to flow through the coil 61a of the electromagnetic actuator 61, a pressing force can be rapidly applied to the head. Furthermore, by changing the value of the current flowing through the coil 61a, the pressing force applied to the head can be rapidly changed. Specifically, by increasing the value of the current flowing through the coil 61a, the pressing force applied to the head can be rapidly increased; by decreasing the value of the current flowing through the coil 61a, the pressing force applied to the head can be rapidly decreased.

[0179] Therefore, according to this embodiment, for example, high pressing pressure can be rapidly applied to the thicker portion of the substrate Wf. As a result, the substrate Wf can be processed in a short time.

[0180] Next, variations of the above-described embodiments will be described.

[0181] (Variation Example 1)

[0182] Figure 9 This is a schematic diagram illustrating the processing apparatus 1 of Modified Example 1 of the embodiment. Specifically, for the processing apparatus 1 of this modified example, Figure 9 With the above Figure 2 Similarly, the swinging of multiple heads is illustrated schematically.

[0183] Figure 9 The processing device 1 of this modified example is illustrated with Figure 2 The differences between the illustrated embodiments are as follows: the swing shaft 72a of the first swing device 70a is disposed near the second central axis XL2, and the swing shaft 82b of the fourth swing device 80b is disposed near the second central axis XL2. The other structures of the processing device 1 in this modified example are the same as those in the processing device 1 of the above-described embodiment. In this modified example, the same effects as in the above-described embodiment can also be achieved.

[0184] (Variation Example 2)

[0185] Figure 10 This is a schematic diagram illustrating the processing apparatus 1 of Modified Example 2 of the embodiment. Specifically, for the processing apparatus 1 of this modified example, Figure 10 With the above Figure 2 Similarly, the swinging of multiple heads is illustrated schematically.

[0186] Figure 10The processing apparatus 1 of this modified example does not include the third head 30b, the fourth head 40b, or the swinging device for swinging these heads. Furthermore, in the processing apparatus 1 of this modified example, the swing axis 82a of the second swinging device 80a is disposed in one of the two regions divided by the second central axis XL2 (the region on the X-direction side relative to the second central axis XL2), and in the other of the two regions divided by the first central axis XL1 (the region on the Y-direction side relative to the first central axis XL1). In the above points, this modified example and... Figure 2 The illustrated embodiments differ. The other structures of the processing apparatus 1 in this modified example are the same as those in the described embodiments. In this modified example, the same effects as those in the described embodiments can be achieved.

[0187] The embodiments and modifications of the present invention have been described in detail above, but the present invention is not limited to these specific embodiments and modifications. Various modifications and alterations can be made within the scope of the present invention as described in the claims.

Claims

1. A processing apparatus configured to perform a polishing process, as a predetermined process, on a substrate, characterized in that, have: A platform configured to hold the substrate with the surface to be processed facing upwards; A table rotation device configured to rotate the table; Multiple heads are provided, each head having a processing pad mounted thereon. The processing pad has an area smaller than the area of ​​the surface to be processed on the substrate. The multiple heads are configured such that the processing pad contacts the surface to be processed on the substrate. Multiple head rotating devices, each configured to rotate the multiple heads respectively; Multiple pressing devices, each of which has an electromagnetic actuator, wherein the electromagnetic actuator is configured to apply pressing force to the multiple heads using electromagnetic force; as well as Multiple swinging devices are configured to cause the multiple heads to swing respectively.

2. The processing apparatus according to claim 1, characterized in that, The plurality of heads each include: a retaining plate on which the processing pad is mounted; a base plate disposed above the retaining plate; and a rubber buffer plate disposed between the retaining plate and the base plate.

3. The processing apparatus according to claim 1, characterized in that, A plurality of nozzles are provided in the outer edge region of the area extending a predetermined distance from the outer edge of the upper surface of the platform toward the center of the upper surface. The plurality of nozzles are configured to spray liquid toward the lower surface of the substrate disposed on the upper surface.

4. The processing apparatus according to claim 1, characterized in that, The plurality of heads includes a first head and a second head, wherein a first processing pad is mounted on the first head and a second processing pad is mounted on the second head. The plurality of swinging devices includes a first swinging device and a second swinging device, wherein the first swinging device is configured to swing the first head, and the second swinging device is configured to swing the second head. The first swinging device includes a first swing axis, and the first swinging device is configured to cause the first head to swing about the first swing axis. The second swinging device includes a second swing axis, and the second swinging device is configured to cause the second head to swing about the second swing axis as a center. The first swing axis and the second swing axis are positioned in the region that is located on the outside of the platform when viewed from above.

5. The processing apparatus according to claim 4, characterized in that, Assuming that during the overhead view, a first central axis passes through the center of the platform and a second central axis passes through the center and is perpendicular to the first central axis, then... The first swing axis and the second swing axis are disposed in one of two regions divided by the first central axis. The first swing axis is disposed in one of the two regions divided by the second central axis, and the second swing axis is disposed in the other of the two regions divided by the second central axis.

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