Preparation method of wafer-level two-dimensional material film and semiconductor structure
By combining physical vapor deposition and chemical vapor deposition methods and optimizing precursor supply through quartz sealed box design, the problem of preparing wafer-sized two-dimensional material thin films has been solved, enabling high-quality and uniform mass production, which is suitable for integrated circuits and optoelectronic fields.
Patent Information
- Application Number
- CN202511273382.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-09-08
- Publication Date
- 2025-12-30
AI Technical Summary
Existing technologies are insufficient for producing high-quality, uniform wafer-sized two-dimensional material films, and large-scale mass production is also difficult, thus failing to meet the demands of high-performance chips.
Combining physical vapor deposition and chemical vapor deposition, a wafer-level two-dimensional material film is formed by depositing a metal thin film on a wafer substrate, adding a solid precursor in a quartz sealed box, and heating the reaction in a tube furnace. The quartz sealed box design optimizes the precursor supply and gas concentration gradient to ensure uniformity and mass production.
This technology enables the mass production of high-quality, uniform wafer-level two-dimensional material thin films, suitable for large-scale applications in integrated circuits and optoelectronics, and improves the uniformity and controllability of the materials.
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Figure CN121228239A_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of semiconductor materials technology, and particularly relates to a method for preparing wafer-level two-dimensional material thin films and semiconductor structures. Background Technology
[0002] As technology continues to advance, the number of transistors in chips is increasing exponentially. However, as the channel length of transistors continues to shorten, the short-channel effect of traditional silicon-based semiconductors is becoming increasingly severe, causing many problems such as reduced threshold voltage, carrier velocity saturation, and surface scattering.
[0003] Two-dimensional (2D) materials offer significant advantages, including ultra-thin layered structures, excellent electrostatic control, and low operating voltage and energy consumption. When used as channels, they are naturally unaffected by short-channel effects, and their smooth, dangling-bond-free surfaces effectively reduce carrier scattering, maintaining high carrier mobility even at atomic-level thicknesses. Therefore, obtaining high-quality, wafer-scale 2D materials has become a focal point for researchers.
[0004] While significant breakthroughs have been achieved in the research of wafer-scale two-dimensional material thin films, their fabrication process still faces numerous challenges. For example, ensuring the high quality and uniformity of the material is a major challenge; only high-quality and uniform materials can meet the requirements of high-performance chips. Furthermore, achieving large-scale mass production of wafer-scale two-dimensional material thin films is a key objective. Only through mass production can the widespread application of two-dimensional materials in fields such as integrated circuits be promoted. However, traditional methods are insufficient to guarantee the large-scale mass production of wafer-scale two-dimensional material thin films. Summary of the Invention
[0005] To address the problems existing in the aforementioned related technologies, this application provides a method for preparing wafer-level two-dimensional material thin films and a semiconductor structure, which combines physical vapor deposition and chemical vapor deposition methods to generate wafer-level two-dimensional material thin films with large batch size and high repeatability.
[0006] In a first aspect, embodiments of this application propose a method for preparing wafer-level two-dimensional material thin films, comprising the following steps:
[0007] Metal thin films are deposited on wafer substrates using physical vapor deposition.
[0008] The wafer substrate with the deposited metal thin film is placed in a quartz sealed box, and a solid precursor is added to the quartz sealed box; and
[0009] The quartz sealed box is placed in a tube furnace and heated, causing the solid precursor to sublimate into a gaseous state. A chemical vapor deposition reaction occurs in the tube furnace, and the mixture is cooled to room temperature to form a wafer-level two-dimensional material thin film on the wafer substrate.
[0010] Furthermore, the metal thin film is one or more of Mo, W, Nb, Sn, Cr, Pd, and Pt.
[0011] Furthermore, the surface roughness of the metal film is less than 1 nm, and the thickness of the metal film is between 1 and 100 nm.
[0012] Furthermore, the solid precursor is S, Se, or Te.
[0013] Furthermore, the weight of the solid precursor is between 0.01 and 0.5 g.
[0014] Furthermore, the weight of the solid precursor is 0.01-0.1g.
[0015] Furthermore, prior to depositing the metal thin film on the wafer substrate using physical vapor deposition, the method further includes:
[0016] The wafer substrate is annealed at high temperature to obtain a wafer substrate with high flatness and steps.
[0017] Furthermore, the high-temperature annealing temperature is between 800 and 1200 degrees Celsius.
[0018] Furthermore, the wafer substrate is a silicon substrate or a sapphire substrate, and the size of the wafer substrate is between 1 and 8 inches.
[0019] Secondly, embodiments of this application also provide a semiconductor structure, the semiconductor structure comprising a two-dimensional material thin film, the two-dimensional material thin film being made by the method described in any of the above-mentioned embodiments.
[0020] In the wafer-level two-dimensional material thin film preparation method provided in this application embodiment, firstly, a metal thin film is deposited on the surface of a wafer substrate using physical vapor deposition (PVD) to provide nucleation sites for the two-dimensional material as a catalytic layer. The thickness and uniformity of this metal thin film directly affect the subsequent growth quality. Secondly, the metal-deposited wafer is placed in a quartz sealed container, and a solid precursor is added. The quartz container design isolates the reaction environment, preventing precursor contamination of the inner wall of the tube furnace. Simultaneously, by controlling the volume and amount of precursor within the container, the gas concentration gradient is adjusted to ensure uniform distribution of the precursor on the wafer surface. Finally, the quartz sealed container is heated in a tube furnace, where the solid precursor sublimates into a gaseous state, undergoing catalytic cracking and self-assembly reactions on the surface of the metal thin film to form a two-dimensional material. After cooling, the film crystallizes and solidifies, thus forming a wafer-level two-dimensional material thin film on the wafer substrate. The wafer-level two-dimensional material thin film preparation method provided in this application embodiment, through the combined use of PVD-CVD and the sealed container design, achieves the batch, efficient, and controllable preparation of wafer-level two-dimensional materials, providing technical support for the large-scale application of two-dimensional materials in integrated circuits and optoelectronics. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.
[0022] Figure 1 This is a schematic flowchart illustrating the method for preparing wafer-level two-dimensional material thin films provided in the embodiments of this application.
[0023] Figure 2 The diagram shows the structure of the quartz sealing box used in the preparation method provided in the embodiments of this application. Figure a is an optical photograph of the actual quartz sealing box, Figure b is a three-dimensional schematic diagram of the quartz sealing box, Figure c is a top view of the quartz sealing box, and Figure d is a side view of the quartz sealing box.
[0024] Figure 3 Atomic force microscopy (AFM) images of the sapphire substrate used in the preparation method provided in the embodiments of this application, wherein, Figure a is the AFM image of the sapphire substrate before high-temperature annealing, and Figure b is the AFM image of the sapphire substrate after high-temperature annealing.
[0025] Figure 4 Actual optical images of two-inch and four-inch MoS2 thin films prepared by the preparation method provided in the embodiments of this application;
[0026] Figure 5 The diagram shows the characterization of the four-inch MoS2 thin film prepared by the preparation method provided in the embodiments of this application. In the diagram, a is the actual optical image of the MoS2 thin film, b is the AFM image of the MoS2 thin film, c is the Raman spectrum of the MoS2 thin film, and d is the second harmonic spectrum of the MoS2 thin film.
[0027] Figure 6 The diagram shows the characterization of the four-inch WS2 thin film prepared by the preparation method provided in the embodiments of this application. In the diagram, a is the actual optical image of the WS2 thin film, b is the AFM image of the WS2 thin film, c is the Raman spectrum of the WS2 thin film, and d is the second harmonic spectrum of the WS2 thin film.
[0028] Figure 7 The diagram shows the characterization of the four-inch MoSe2 thin film prepared by the preparation method provided in the embodiments of this application. In the diagram, a is the actual optical image of the MoSe2 thin film, b is the AFM image of the MoSe2 thin film, c is the Raman spectrum of the MoSe2 thin film, and d is the second harmonic spectrum of the MoSe2 thin film.
[0029] Figure 8 The diagram shows the characterization of a four-inch WSe2 thin film prepared by the preparation method provided in the embodiments of this application. Figure a is the actual optical image of the WSe2 thin film, Figure b is the AFM image of the WSe2 thin film, Figure c is the Raman spectrum of the WSe2 thin film, and Figure d is the second harmonic spectrum of the WSe2 thin film.
[0030] Figure 9 Actual optical image of a two-inch MoS2 thin film mass-produced using the preparation method provided in the embodiments of this application.
[0031] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation
[0032] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.
[0033] It should be understood that, when used in this specification and the appended claims, the terms "comprising" and "including" indicate the presence of the described features, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.
[0034] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise. Those skilled in the art will be able to understand the specific meaning of the above terms in this application according to the specific circumstances.
[0035] Reference Figures 1 to 9 This application provides a method for preparing a wafer-level two-dimensional material thin film, comprising the following steps:
[0036] S101: Deposit a metal thin film on a wafer substrate using physical vapor deposition (PVD).
[0037] S102: The wafer substrate with the deposited metal thin film is placed in a quartz sealed box, and a solid precursor is added to the quartz sealed box; and
[0038] S103: The quartz sealed box is placed in a tube furnace and heated to sublimate the solid precursor into a gaseous state. A chemical vapor deposition (CVD) reaction occurs in the tube furnace, and the mixture is cooled to room temperature to form a wafer-level two-dimensional material film on the wafer substrate.
[0039] Specifically, firstly, a metal thin film is deposited on the surface of a wafer substrate using physical vapor deposition (PVD) to provide nucleation sites for two-dimensional materials as a catalytic layer. The thickness and uniformity of this film directly affect the subsequent growth quality. Secondly, the metal-deposited wafer is placed in a quartz-sealed container, and a solid precursor is added. The quartz container design isolates the reaction environment, preventing precursor contamination of the tube furnace wall. Simultaneously, by controlling the volume and amount of precursor within the container, the gas concentration gradient is adjusted to ensure uniform precursor distribution on the wafer surface. Finally, the quartz-sealed container is heated in a tube furnace. Adjusting the carrier gas flow rate, heating temperature, tube pressure, heating rate, and heating duration causes the solid precursor to sublimate into a gaseous state, undergoing catalytic cracking and self-assembly reactions on the metal thin film surface to form a two-dimensional material. After cooling, the film crystallizes and solidifies, thus forming a wafer-level two-dimensional material thin film on the wafer substrate. Key parameters of this process include temperature (affecting crystallization quality), time (balancing growth rate and uniformity), and gas atmosphere (inert gas protection to prevent oxidation).
[0040] Therefore, the wafer-level two-dimensional material thin film preparation method provided in this application achieves uniform coverage of wafer-level metal thin films through physical vapor deposition, providing a consistent substrate for chemical vapor deposition reactions. Furthermore, the quartz sealed box design optimizes precursor supply and improves the uniformity of the two-dimensional material thin film. It boasts strong process compatibility, is applicable to various two-dimensional material systems, and can be integrated with semiconductor processes. The wafer-level two-dimensional material thin film preparation method provided in this application, through the combined use of PVD-CVD and sealed box design, achieves the batch, efficient, and controllable preparation of wafer-level two-dimensional materials, providing technical support for the large-scale application of two-dimensional materials in integrated circuits and optoelectronics.
[0041] It should be noted that the physical vapor deposition used in the preparation method provided in this application includes one or more of magnetron sputtering, thermal evaporation, and electron beam evaporation processes. The specific process used depends on the actual situation. When the physical vapor deposition is magnetron sputtering, the experimental parameters are: pressure of 20-10... 3 The physical vapor deposition (PVD) is performed using argon as the carrier gas, with a substrate temperature of 20-200 degrees Celsius and a deposition rate of 0.1-1 nm / s. When the PPVD is performed using thermal evaporation or electron beam evaporation, the experimental parameters are: pressure less than 10 MPa. -4The substrate temperature is 20-200 degrees Celsius, and the deposition rate is 0.01-0.1 nm / s. In contrast, chemical vapor deposition (CVD) involves reactions at temperatures of 400-900 degrees Celsius and pressures of 10... -3 -10 5 The carrier gas is one or more of argon, hydrogen, nitrogen, or an argon-hydrogen mixture, with a carrier gas flow rate of 10-200 sccm, and the growth time is typically 5-15 minutes. Furthermore, the preparation method provided in this application can prepare wafer-level two-dimensional material films of different thicknesses by adjusting the deposition rate of the metal film during physical vapor deposition.
[0042] In addition, refer to again Figure 2 The quartz sealing box used in the preparation method provided in this application has dimensions of 10-100cm in length, 10-20cm in width, and 10-20cm in height, and can hold 2-200 metal thin films / wafer substrates at the same time. The quartz tube of the tube furnace has a diameter of 12 inches and a length of 1.2m.
[0043] Furthermore, in some embodiments of this application, the metal thin film is one or more of Mo (molybdenum), W (tungsten), Nb (niobium), Sn (tin), Cr (chromium), Pd (palladium), and Pt (platinum).
[0044] Specifically, when the metal thin film is selected from one or more of Mo, W, Nb, Sn, Cr, Pd, and Pt, these metal materials exhibit broad application potential in physical vapor deposition (PVD) or chemical vapor deposition (CVD) technologies due to their unique physical and chemical properties.
[0045] Metal thin films, including Mo, W, Nb, Sn, Cr, Pd, and Pt, have wide applications and significant advantages in the fabrication of two-dimensional materials. Among them, Mo is a key element in the preparation of two-dimensional transition metal carbides and MXene family materials, such as two-dimensional Mo2C. Ultrathin, low-defect films can be prepared using specific methods and are commonly used in electrocatalysis. W combines with chalcogenides to form TMDCs, such as WS2 and WSe2, possessing unique electronic structures and excellent properties, suitable for electronics, optoelectronics, and sensors. Nb: Nb-based multilayer boron nitride thin films combine the conductivity of niobium with the excellent properties of h-BN and are commonly used in high-frequency devices. Sn: Two-dimensional materials composed of Sn and other elements, such as SnSb thin films, have applications in topological quantum computing due to their strong spin-orbit coupling effect. Cr: It can form transition metal chalcogenides and can also prepare two-dimensional ferromagnetic materials, such as Cr5Te8 nanosheets, which can be used in spintronic devices. Pd: Pd nanosheets have a large specific surface area and high catalytic activity, making them suitable for biomedical and catalytic applications. Pt: As a substrate material, it can induce two-dimensional materials to form specific structures, thereby enabling the control of novel physical properties.
[0046] Furthermore, in some embodiments of this application, the surface roughness of the metal film is less than 1 nm, and the thickness of the metal film is between 1 and 100 nm.
[0047] Specifically, a surface roughness of less than 1 nm signifies an extremely smooth and flat metal film surface. This provides an ideal template for the growth of two-dimensional materials, reducing defects and dislocations during the growth process and facilitating the fabrication of high-quality, large-area, and highly uniform two-dimensional materials. The thickness of the metal film, ranging from 1 to 100 nm, can be precisely controlled, meeting the diverse requirements for metal substrate thickness in the fabrication of different two-dimensional materials. By precisely controlling the thickness, the growth conditions of two-dimensional materials can be further optimized, achieving precise control over the properties of these materials.
[0048] Furthermore, in some embodiments of this application, the solid precursor is S (sulfur), Se (selenium), or Te (tellurium).
[0049] Specifically, metal thin films can react with S, Se, and Te to generate TMDCs, such as MoS2, WSe2, and NbTe2. These two-dimensional materials can be used as channel materials for transistors in electronic devices, utilizing their high mobility and tunable bandgap characteristics to achieve high-speed, low-power electron transport. In the field of optoelectronic devices, they can serve as core materials for photodetectors and light-emitting diodes, achieving highly efficient photoelectric conversion due to their unique light absorption and emission properties.
[0050] Furthermore, in some embodiments of this application, the weight of the solid precursor is between 0.01 and 0.5 g.
[0051] Specifically, the above weight range ensures sufficient precursor to fully react with the metal film to generate the target two-dimensional material, while avoiding waste and increased byproducts due to excessive precursor. This not only improves raw material utilization and reduces preparation costs but also reduces the difficulty and workload of subsequent purification steps. The specific weight of the solid precursor is precisely controlled based on the type and thickness of the metal film and the performance requirements of the target two-dimensional material. This helps to accurately regulate the growth process of the two-dimensional material, achieving precise control over key parameters such as the number of material layers, size, and defect density, thereby producing high-quality two-dimensional materials with stable performance and uniform quality.
[0052] Furthermore, in some embodiments of this application, the weight of the solid precursor is 0.01-0.1g.
[0053] In other words, the weight of the solid precursor is preferably 0.01-0.1g, which can save raw materials, reduce by-product processing expenses, adapt to various scales, facilitate flexible parameter adjustment, and precisely control the reaction process, reduce defects and impurities, improve crystal quality and uniformity, and provide strong support for the efficient and high-quality preparation of two-dimensional materials.
[0054] Furthermore, in some embodiments of this application, prior to depositing a metal thin film on the wafer substrate using physical vapor deposition, the following steps are also included:
[0055] The wafer substrate is annealed at high temperature to obtain a wafer substrate with high flatness and steps.
[0056] Specifically, before depositing a specific metal thin film on a wafer substrate using physical vapor deposition to fabricate two-dimensional materials, the wafer substrate is first subjected to high-temperature annealing, for example, in a muffle furnace. This step enables the wafer substrate to achieve high flatness and form a stepped structure, providing a high-quality template for subsequent metal thin film deposition. This improves the quality of the metal thin film and, consequently, ensures the material performance and quality when reacting with solid precursors such as S, Se, or Te to prepare two-dimensional materials.
[0057] Furthermore, in some embodiments of this application, the high-temperature annealing temperature is between 800 and 1200 degrees Celsius.
[0058] Specifically, before depositing the metal thin film, the wafer substrate is first subjected to high-temperature annealing, with the annealing temperature precisely controlled between 800 and 1200 degrees Celsius. This temperature range enables the wafer substrate to achieve high flatness and form a stepped structure, providing a high-quality template for subsequent metal thin film deposition, which helps to improve the quality of the metal thin film and ultimately ensures the performance and quality of the prepared two-dimensional material.
[0059] Furthermore, refer to again Figure 3 In some embodiments of this application, the wafer substrate is a silicon substrate or a sapphire substrate, and the size of the wafer substrate is between 1 and 8 inches.
[0060] Specifically, silicon or sapphire substrates can be used as wafer substrates. Both substrates offer stable performance and provide a good foundation for subsequent processes. Meanwhile, the wafer substrate size ranges from 1 to 8 inches, meeting the needs of different scale fabrication operations and ensuring the smooth and high-quality execution of subsequent metal thin film deposition and two-dimensional material fabrication.
[0061] The following examples, Example 1 and Example 2, illustrate in detail the method for preparing wafer-level two-dimensional material thin films provided in this application:
[0062] Example 1
[0063] Reference Figures 4 to 8In Example 1, a 4-inch sapphire substrate was selected and sequentially immersed in acetone, ethanol, isopropanol, and deionized water, each ultrasonically cleaned for 15 minutes to thoroughly remove surface organic contaminants. Subsequently, the cleaned sapphire substrate was transferred to lint-free paper, dried with a nitrogen gun, and then placed in a plasma cleaner for 5 minutes in an oxygen atmosphere to further remove residual impurities and ensure a clean substrate surface. Following this, the pretreated 4-inch sapphire substrate was placed in a magnetron sputtering coating machine, where the vacuum level was below 10... -4 At pa, using argon as the carrier gas, a coating power of 10W was used for 1 minute to deposit a Mo film of approximately 2nm (or using argon as the carrier gas, a coating power of 15W was used for 1 minute to deposit a W film of approximately 2nm). The sapphire substrate with the deposited 2nm Mo(W) film was placed vertically on a quartz holder. 0.5g of sulfur powder (or 0.5g of selenium granules) was placed in a quartz boat, and then the quartz holder and boat were placed together into a quartz sealed box. The quartz sealed box was then gently pushed into the tube furnace and placed in the center of the second temperature zone. During the combination reaction, the tube furnace heating time was set to 30 minutes, the reaction temperature for MoS2 was set to 750°C, the reaction temperature for MoSe2 was set to 650°C, the reaction temperature for WS2 was set to 800°C, and the reaction temperature for WSe2 was set to 700°C. The carrier gas was an argon-hydrogen mixture at 100 sccm (argon:hydrogen = 95:5), and the reaction pressure was 100 Pa. After the reaction, the tube furnace was allowed to cool naturally to obtain the wafer-level M(Mo,W)X(S,Se)2 thin film. Figure 3 As shown in Figures 4, 5, 6, and 7, the prepared wafer-level thin film materials all exhibit corresponding Raman signals, have roughness below 0.5 nm, and possess strong second harmonic signals, indicating that the prepared wafer-level thin film materials are of high quality.
[0064] Example 2
[0065] Reference Figure 9 In Example 2, six 2-inch sapphire substrates were selected and sequentially immersed in acetone, ethanol, isopropanol, and deionized water, each ultrasonically cleaned for 15 minutes to thoroughly remove surface organic contaminants. Subsequently, the cleaned sapphire substrates were transferred to lint-free paper, dried with a nitrogen gun, and then placed in a plasma cleaner for 5 minutes in an oxygen atmosphere to further remove residual impurities and ensure substrate surface cleanliness. Following this, the six pre-treated 2-inch sapphire substrates were placed in a magnetron sputtering coating apparatus. When the vacuum level inside the apparatus was below 10... -4At a pressure of 10 Pa, using argon as the carrier gas, a Mo film of approximately 2 nm was deposited at a deposition power of 10 W for 1 min. Next, six sapphire substrates with the 2 nm Mo film deposited were vertically placed on a quartz frame, and 2 g of sulfur powder was placed in a quartz boat. The quartz frame and boat were then placed together into a quartz sealed box. The quartz sealed box was then gently pushed into a tube furnace and placed in the center of the second temperature zone. During the chemical reaction, the tube furnace heating time was set to 30 minutes, and the reaction temperature of MoS2 was set to 750 degrees Celsius. The carrier gas was an argon-hydrogen mixture at 100 sccm (argon:hydrogen = 95:5), and the reaction pressure was 100 Pa. After the reaction, the tube furnace was allowed to cool naturally, yielding six wafer-level MoS2 thin films. Therefore, the wafer-level two-dimensional material thin film preparation method provided in this application, by adjusting the number of metal film substrates placed in the quartz sealed box, achieves the batch preparation of high-quality wafer-level two-dimensional material thin films.
[0066] Furthermore, this application also provides a semiconductor structure comprising a two-dimensional material thin film, which is fabricated using the methods described above. The specific preparation method of this two-dimensional material thin film is the same as described in the above embodiments. Since the specific preparation method of the two-dimensional material thin film adopts all the technical solutions of all the above embodiments, it possesses at least all the beneficial effects brought about by the technical solutions of the above embodiments, and will not be elaborated further here.
[0067] The above description is merely a specific embodiment of this application, but the scope of protection of this application is not limited thereto. Any person skilled in the art can easily conceive of various equivalent modifications or substitutions within the technical scope disclosed in this application, and these modifications or substitutions should all be covered within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.
Claims
1. A method for preparing a wafer-level two-dimensional material thin film, characterized in that, The method comprises the following steps: depositing a metal thin film on a wafer substrate by physical vapor deposition; placing the wafer substrate with the deposited metal thin film in a quartz sealed box, and adding a solid precursor in the quartz sealed box; and placing the quartz sealed box in a tube furnace for heating, so that the solid precursor sublimates into a gaseous state, a chemical vapor deposition reaction occurs in the tube furnace, and the quartz sealed box is cooled to room temperature to form a wafer-level two-dimensional material thin film on the wafer substrate.
2. The method of claim 1, wherein, The metal thin film is one or more of Mo, W, Nb, Sn, Cr, Pd, and Pt.
3. The method of claim 2, wherein, The surface roughness of the metal thin film is less than 1 nm, and the thickness of the metal thin film is between 1 nm and 100 nm.
4. The method of claim 3, wherein, The solid precursor is S, Se, or Te.
5. The method of claim 4, wherein, The weight of the solid precursor is between 0.01 g and 0.5 g.
6. The method of claim 5, wherein, The weight of the solid precursor is between 0.01 g and 0.1 g.
7. The method according to any one of claims 1 to 6, characterized in that, Before the step of depositing a metal thin film on a wafer substrate by physical vapor deposition, the method further comprises: high-temperature annealing the wafer substrate to obtain a wafer substrate with high flatness and steps.
8. The method of claim 7, wherein, The high-temperature annealing temperature is between 800°C and 1200°C.
9. The method of claim 1, wherein, The wafer substrate is a silicon substrate or a sapphire substrate, and the size of the wafer substrate is between 1 inch and 8 inches.
10. A semiconductor structure, characterized by The semiconductor structure comprises a two-dimensional material thin film, which is made by the method of any one of claims 1 to 9.