Gas injection system, reactor system and method of supplying process gas

Abstract

A gas injection system, a reactor system including the gas injection system, and a method for supplying a process gas to a reaction chamber are disclosed. The disclosed gas injection system includes a gas source assembly coupled to a gas distribution assembly, wherein an etchant gas and a precursor gas are combined prior to injection into a reaction chamber.

Description

Technical Field

[0001] This disclosure generally relates to the field of systems and apparatus used in the manufacture of semiconductor devices and integrated circuits. More specifically, this disclosure relates to gas injection systems, reactor systems including gas injection systems, and related methods. Background Technology

[0002] Semiconductor devices can be fabricated in a semiconductor processing system comprising one or more reaction chambers. A deposition gas, including precursors, dopants, etc., can be injected into the reaction chamber to form a silicon-containing layer on a substrate disposed within the reaction chamber. Furthermore, additional gases, such as etchants, can be injected into the reaction chamber during the formation of the silicon-containing layer. For example, etchants can be used in deposition-etching processes and / or in processes for cleaning the inner walls of the reaction chamber where deposition occurs.

[0003] Conventional gas injection systems for injecting precursor and etchant gases into the reaction chamber can include complex equipment and components, requiring complex and costly manufacturing processes. Furthermore, conventional gas injection systems can suffer from poor flow stability, which can adversely affect processes carried out in the reaction chamber coupled with such a system. Therefore, improved gas injection systems and associated reactor systems are desirable for improving the stability of gas injection into the reaction chamber. Summary of the Invention

[0004] This summary presents a simplified description of the selected concepts, which will be described in further detail below. This summary is not intended to require the identification of key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0005] Various embodiments of this disclosure relate to gas injection systems, reactor systems including gas injection systems, and related methods for supplying process gases to a reaction chamber. In certain embodiments, the gas injection system may include a gas distribution assembly that can premix etchant gas and precursor gas before injection into a flange assembly coupled to the reaction chamber. In various embodiments, premixing the precursor gas and etchant gas to form the process gas before injection into the flange assembly can result in a less complex flange assembly that is easier to manufacture and maintain. Furthermore, the gas injection system of this disclosure can improve the stability of the process gas injected into the reaction chamber, thereby improving the uniformity of the process performed with such a gas injection system. Additionally, the gas injection system of this disclosure can improve the purity of the process gas injected into the reaction chamber by removing potential metallic contaminants from the wetted areas of the flange assembly.

[0006] Various embodiments of this disclosure provide a gas injection system comprising: a gas source assembly including a precursor source configured to supply a precursor gas and an etchant source configured to supply an etchant gas; a gas distribution assembly including: a plurality of precursor gas lines fluidly connected to the precursor source; a plurality of etchant gas lines fluidly connected to the etchant source; a plurality of manifolds, each of the plurality of manifolds including a first input port fluidly connected to one of the plurality of precursor gas lines, a second input port fluidly connected to one of the plurality of etchant gas lines, and an output port configured to output a process gas comprising a mixture of the precursor gas and the etchant gas; and a flange assembly including a plurality of gas channels formed within the flange assembly, wherein each of the plurality of gas channels is fluidly connected to an output port of one of the plurality of manifolds.

[0007] In some embodiments, the flange assembly further includes a plurality of gas expansion chambers formed within the flange assembly, wherein each of the plurality of gas expansion chambers is fluidly connected to one of a plurality of gas channels.

[0008] In some embodiments, the flange assembly further includes a plurality of gas conduits formed within the flange assembly, wherein each of the gas conduits includes a conduit inlet fluidly connected to one of a plurality of gas expansion chambers and a conduit outlet configured to inject process gas into a reaction chamber.

[0009] In some embodiments, each of the plurality of gas conduits has a conduit width between 1.5 mm and 4 mm.

[0010] In some embodiments, each of the plurality of gas conduits has a conduit length between 1 mm and 10 mm.

[0011] In some embodiments, the flange assembly includes a flange housing, the flange housing including a front housing and a rear housing, wherein the front housing has a first coupling surface and the rear housing has a second coupling surface, and the rear housing is coupled to the front housing by coupling the first coupling surface to the second coupling surface.

[0012] In some embodiments, the front housing further includes a rear surface comprising a plurality of recesses, and each of the plurality of gas expansion chambers is defined at least partially by the second connecting surface and one of the plurality of recesses.

[0013] In some embodiments, the rear surface of the front housing further includes a plurality of conduit surfaces, wherein each of the conduit surfaces is recessed from the first coupling surface.

[0014] In some embodiments, each of the plurality of gas conduits is defined at least in part by a second connecting surface and one of the plurality of conduit surfaces.

[0015] In some embodiments, the rear housing is mechanically secured to the front housing by a series of threaded joints, wherein the series of threaded joints are inserted through the back of the rear housing and connected to a first engagement surface of the front housing, each of the threaded joints being positioned within a non-wetting area of ​​the flange assembly.

[0016] Various other embodiments of this disclosure provide a reactor system including: a reaction chamber; a flange assembly coupled to the reaction chamber, the flange assembly including: a flange housing including a front housing having a first coupling surface and a rear housing having a second coupling surface, wherein the rear housing is coupled to the front housing by coupling the first coupling surface to the second coupling surface; a plurality of gas channels formed within the front housing; a plurality of gas expansion collection chambers, each of the plurality of gas expansion collection chambers being fluidly coupled to one of the plurality of gas channels, wherein each of the plurality of gas expansion collection chambers is at least partially defined by the second coupling surface and one of a plurality of recesses disposed in the rear surface of the front housing; and a plurality of gas conduits, each of the plurality of gas conduits including a conduit inlet fluidly coupled to one of the plurality of gas expansion collection chambers and a conduit outlet configured to inject a process gas into the reaction chamber, wherein each of the plurality of gas conduits A gas injection system fluidly connected to a flange assembly includes: a gas source assembly including a precursor source configured to supply precursor gas and an etchant source configured to supply etchant gas; and a gas distribution assembly including: a plurality of precursor gas lines fluidly connected to the precursor source; a plurality of etchant gas lines fluidly connected to the etchant source; and a plurality of manifolds, each of the plurality of manifolds including a first input port fluidly connected to one of the plurality of precursor gas lines, a second input port fluidly connected to one of the plurality of etchant gas lines, and an output port configured to output a process gas including the precursor gas and the etchant gas, wherein each of the plurality of gas channels of the flange assembly is fluidly connected to the output port of one of the plurality of manifolds.

[0017] In some embodiments, each of the plurality of gas conduits has a conduit width between 1.5 mm and 4 mm.

[0018] In some embodiments, each of the plurality of gas conduits has a conduit length between 1 mm and 10 mm.

[0019] In some embodiments, the rear housing is mechanically secured to the front housing by a series of threaded joints, wherein the series of threaded joints are inserted through the back of the rear housing and connected to a first engagement surface of the front housing, each of the threaded joints being positioned within a non-wetting area of ​​the flange assembly.

[0020] Various further embodiments of this disclosure provide a method for supplying a process gas to a reaction chamber, the method comprising: supplying a precursor gas from a gas source assembly to a plurality of precursor gas lines; supplying an etchant gas from the gas source assembly to a plurality of etchant gas lines; mixing the precursor gas and the etchant gas in a plurality of manifolds to form a process gas, wherein each of the plurality of manifolds includes a first inlet port fluidly connected to one of the plurality of precursor gas lines, a second inlet port fluidly connected to one of the plurality of etchant gas lines, and an outlet port for discharging the process gas; supplying the process gas from the plurality of manifolds to a plurality of gas channels formed in a flange assembly, wherein the flange assembly is connected to the reaction chamber; feeding the process gas from the plurality of gas channels to a plurality of gas expansion chambers formed in the flange assembly, wherein each of the plurality of gas expansion chambers is fluidly connected to one of the plurality of gas channels; feeding the process gas from the plurality of gas expansion chambers to a plurality of gas conduits, wherein each of the plurality of gas conduits is fluidly connected to one of the plurality of gas expansion chambers; and injecting the process gas from the plurality of gas conduits into the reaction chamber.

[0021] In some embodiments, the flange assembly includes a flange housing, the flange housing including a front housing and a rear housing, wherein the front housing has a first coupling surface and the rear housing has a second coupling surface, and the rear housing is secured to the front housing by coupling the first coupling surface to the second coupling surface.

[0022] In some embodiments, the front housing further includes a rear surface comprising a plurality of recesses, and each of the plurality of gas expansion chambers is defined at least partially by the second connecting surface and one of the plurality of recesses.

[0023] In some embodiments, the rear surface of the front housing further includes a plurality of conduit surfaces, wherein each of the conduit surfaces is recessed from the first coupling surface, and wherein each of the plurality of gas conduits is at least partially defined by the second coupling surface and one of the plurality of conduit surfaces.

[0024] In some embodiments, the processing gas is injected into the reaction chamber at a processing gas velocity of 30 m / s to 70 m / s.

[0025] In some embodiments, the processing gas is injected into the reaction chamber through a plurality of gas conduits, each of the plurality of gas conduits having a conduit width equal to or greater than 2 mm.

[0026] For the purpose of summarizing the advantages of the present invention and its implementation relative to prior art, certain objects and advantages of the present invention have been described above. It should be understood, of course, that not all of these objects or advantages may be achieved according to any particular embodiment of the present invention. Therefore, for example, those skilled in the art will recognize that the present invention may be implemented or performed in a manner that achieves or optimizes one or more advantages as taught or suggested herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0027] All these embodiments are intended to fall within the scope of the invention disclosed herein. These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and the invention is not limited to any particular embodiment disclosed. Attached Figure Description

[0028] To facilitate the identification of any particular element or action in the discussion, one or more of the most significant digits in the reference numerals refer to the figure number in which the element was first introduced.

[0029] A more complete understanding of embodiments of this disclosure can be obtained by referring to the detailed description and claims when considered in conjunction with the following illustrative drawings.

[0030] Figure 1 A cross-sectional side view of a reactor system according to one or more embodiments of the present disclosure is shown.

[0031] Figure 2 A gas injection system according to one or more embodiments of the present disclosure is shown.

[0032] Figure 3 A front view of a flange assembly including a portion of a gas distribution assembly according to one or more embodiments of the present disclosure is shown.

[0033] Figure 4 Cross-sectional views of the front and rear housings of a flanged housing according to one or more embodiments of the present disclosure are shown.

[0034] Figure 5 A front view of a portion of the rear surface of a front housing according to one or more embodiments of the present disclosure is shown.

[0035] Figure 6 A cross-sectional view of a flange housing according to one or more embodiments of the present disclosure is shown.

[0036] Figure 7 An enlarged cross-sectional view of a flange housing according to one or more embodiments of the present disclosure is shown.

[0037] Figure 8A method for supplying a process gas to a reaction chamber according to one or more embodiments of the present disclosure is shown.

[0038] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the embodiments illustrated in this disclosure. Detailed Implementation

[0039] The following description of exemplary embodiments of the methods and compositions is merely illustrative and intended for purposes of explanation only. The following description is not intended to limit the scope of this disclosure or the claims. Furthermore, the description of multiple embodiments having indicated features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments including different combinations of said features or steps.

[0040] As used herein, the term substrate can refer to any one or more underlying materials on which layers may be deposited. A substrate may comprise a bulk material, such as silicon (e.g., single-crystal silicon) or other semiconductor materials, and may comprise one or more layers, such as natural oxides or other layers, overlaid or under the bulk material. A substrate may include various topologies, such as grooves, lines, etc., formed within or on at least a portion of the layers and / or bulk material of the substrate. A substrate may comprise one or more materials, including, for example, silicon (Si), germanium (Ge), germanium-tin (GeSn), silicon-germanium (SiGe), silicon-germanium-tin (SiGeSn), silicon carbide (SiC), or group III-V semiconductor materials, such as gallium arsenide (GaAs), gallium phosphide (GaP), or gallium nitride (GaN). In some examples, a substrate may comprise one or more dielectric materials, including, for example, oxides, nitrides, or oxide oxynitrides. A substrate may comprise silicon oxide (e.g., SiO2), metal oxides (e.g., Al2O3), silicon nitride (e.g., Si3N4), or silicon oxynitride. The substrate may also include an engineered substrate, wherein a surface semiconductor layer may be disposed above a bulk support, with an intervening buried oxide (BOX) disposed therebetween. The substrate may include one or more single-crystal surfaces and / or one or more other surfaces, which may include non-single-crystal surfaces, such as polycrystalline surfaces and / or amorphous surfaces. The substrate may include a layer containing a metal (such as copper, cobalt, etc.).

[0041] In this disclosure, "gas" can include materials that are gaseous at normal temperature and pressure (NTP), evaporated solids and / or evaporated liquids, and can consist of a single gas or a mixture of gases, depending on the circumstances. Gases other than process gases (i.e., gases introduced without passing through gas distribution components, other gas distribution devices, etc.) can be used, for example, to seal the reaction space, and may include sealing gases, such as rare gases.

[0042] The term "precursor" can refer to a compound that participates in a chemical reaction to produce another compound. The term "reactant" is used interchangeably with the term "precursor." The term "inert gas" can refer to a gas that does not participate in a chemical reaction and / or is not, to an obvious degree, part of the layer. Exemplary inert gases include helium and argon, and any combination thereof. In some cases, molecular nitrogen and / or hydrogen can be inert gases. The carrier gas can be or may include an inert gas.

[0043] Furthermore, in this disclosure, any two numbers of a variable may constitute a working range of the variable, and any indicated range may include or exclude endpoints. Additionally, any value of the indicated variable (whether or not it is indicated by “about”) may refer to an exact value or an approximate value and includes equivalent values, and may refer to an average, median, representative value, multi-value, etc. Furthermore, in this disclosure, the terms “comprising,” “consisting of,” and “having” may independently mean “generally or broadly comprising,” “including,” “substantially consisting of,” or “consisting of” in some embodiments. The meaning of any definition in this disclosure does not necessarily exclude the common and conventional meaning in some embodiments.

[0044] This disclosure generally relates to gas injection systems, reactor systems including gas injection systems, and methods of using gas injection systems and reactor systems. Gas injection systems and reactor systems including gas injection systems as described herein can be used to process substrates, such as semiconductor wafers, in a gas-phase reactor. As an example, the systems and components described herein can be used to form or grow epitaxial layers (e.g., doped semiconductor layers) on the surface of a substrate.

[0045] As explained in more detail below, it is advantageous to use the exemplary gas injection system described herein because it allows for independent control of gas selection and flow rate at various locations within the reaction chamber. Independent control of the gas and flow rate, in turn, allows for independent adjustment of the film properties of membranes formed using a reactor system that includes a gas injection system. For example, the exemplary gas injection system can be used to independently adjust, for example, the resistivity and film thickness (or thickness uniformity) of layers epitaxially formed on a substrate. Alternatively or additionally, the exemplary gas injection system can be used to compensate for gas flow variations, flow rates, consumption rate variations, autodoping, or combinations thereof that would otherwise occur within the reaction chamber of the reactor system. For example, independent control of various gases can be used to compensate for edge effects and / or rotating substrates, which could otherwise lead to inhomogeneities in one or more film properties.

[0046] Now turn to the attached diagram. Figure 1A cross-sectional side view of an exemplary reactor system 100 is shown. The reactor system 100 includes an optional substrate transport system 102, a reaction chamber 104, a gas injection system 106, and an optional wall 108 disposed between the reaction chamber 104 and the substrate transport system 102. The reactor system 100 may also include a gas source assembly 110, which includes at least a precursor source 112 and an etchant source 114. The reactor system 100 may also include an exhaust source 116. During operation of the reactor system 100, a substrate (not shown) may be transferred from, for example, the substrate transport system 102 to the reaction chamber 104. Once the substrate has been transferred to the reaction chamber 104, one or more gases (such as precursors, etchants, dopants, carrier gases, and / or purge gases) are introduced into the reaction chamber 104 via the gas injection system 106. The reactor system 100 may include any suitable reaction chamber 104, such as a horizontal flow cold-wall epitaxial reactor.

[0047] Figure 2 A gas injection system 106 according to various embodiments is illustrated. The gas injection system 106 may include a gas source assembly 110. In various embodiments, the gas source assembly 110 includes at least two gas sources. For example, the gas source assembly 110 may include a precursor source 112 configured to supply a precursor gas and an etchant source 114 configured to supply an etchant gas. In various embodiments, the precursor source 112 may supply one or more of trichlorosilane, dichlorosilane, silane, dichlorosilane, and propane. In various embodiments, the etchant source 114 may supply one or more of chlorine, hydrochloric acid vapor, and other etchants. The gas injection system 106 may also include additional sources, such as sources for supplying carrier gases (e.g., argon, nitrogen), purge gases (e.g., argon or nitrogen), or dopants (e.g., As, P, C, Ge, and B).

[0048] According to examples of this disclosure, the gas injection system 106 may include a gas distribution assembly 202, which includes one or more (e.g., multiple) precursor gas lines 204 that may be coupled to a precursor source 112. Furthermore, the gas distribution assembly 202 may include one or more (e.g., multiple) etchant gas lines 214 that may be coupled to an etchant source 114.

[0049] According to examples of this disclosure, each of the plurality of precursor gas lines 204 and each of the plurality of etchant gas lines 214 may be coupled to a flow controller. In various embodiments, each of the plurality of precursor gas lines 204 may be coupled to a precursor flow controller 218, and each of the plurality of etchant gas lines 214 may be coupled to an etchant flow controller 216. The flow controllers allow independent control of the flow rate (e.g., rate) of the respective gas to the gas passages formed within the flange assembly 220. The precursor flow controller 218 and the etchant flow controller 216 may include any suitable automatic or manual valve that can control the flow rate of gas to the respective gas passages disposed within the flange assembly 220. Although two gas sources (112 and 114) are shown, the gas injection system 106 may include any suitable number of gas sources.

[0050] According to examples of this disclosure, the gas distribution assembly 202 of the gas injection system 106 may further include a plurality of manifolds configured for mixing a precursor gas and an etchant gas. In various embodiments, the gas distribution assembly 202 may include a plurality of manifolds 206. In various embodiments, each of the plurality of manifolds 206 includes means comprising a first input port 208 configured to receive a first gas from a first gas line and a second input port 210 configured to receive a second gas from a second gas line. The manifold 206 also includes an output port 212 configured to output a processed gas comprising a gas mixture of the first gas and the second gas. In various embodiments, the gas distribution assembly 202 of the gas injection system 106 includes a plurality of manifolds 206. In alternative embodiments, the manifolds 206 may be replaced by alternative means configured to receive one or more gases, mix one or more gases, and output a gas mixture. In some embodiments, each of the plurality of bimanifolds 206 includes a first input port 208 fluidly connected to one of the plurality of precursor gas lines 204, a second input port 210 fluidly connected to one of the plurality of etchant gas lines 214, and an output port 212 configured to output a process gas comprising a mixture of both precursor gas and etchant gas.

[0051] According to examples of this disclosure, the gas injection system 106 also includes a flange assembly 220 (a portion of which is located in...). Figure 2 (as shown in the figure). In such an example, the flange assembly 220 includes a plurality of gas passages 222 disposed within the flange housing of the flange assembly 220 (described in more detail below). In such an example, each of the plurality of gas passages 222 within the flange assembly 220 is fluidly coupled to an output port 212 of one of a plurality of bimanifolds 206.

[0052] Figure 3 The flange assembly 220 is shown in more detail. For example, Figure 3 It shows including ( Figure 2 Front view of flange assembly 220, a part of the gas pipeline. It should be noted that... Figure 3 The dashed elements in the text represent the internal configuration of the flange assembly 220, and "front" as used in the case of the flange assembly refers to the structure or assembly facing the reaction chamber.

[0053] Based on the examples in this disclosure and referenced Figure 3 The flange assembly 220 includes a plurality of gas channels 222 formed within the flange assembly 220. In such an example, each of the plurality of gas channels 222 formed within the flange assembly 220 is in fluid communication with an output port 212 of one of a plurality of bimanifolds 206.

[0054] In some embodiments, the flange assembly 220 may include one to ten gas channels for feeding from one to ten output ports. In some embodiments, the flange assembly 220 may include one to eight gas channels for feeding from one to eight output ports. In some embodiments, the flange assembly 220 may include one to five gas channels for feeding from one to five output ports. In some embodiments, the flange assembly 220 may include fewer than 10 gas channels and corresponding output ports, fewer than 8 gas channels and corresponding output ports, fewer than 5 gas channels and corresponding output ports, or fewer than 3 gas channels and corresponding output ports.

[0055] According to examples of this disclosure, flange assembly 220 may include flange housing 302. In such examples, flange housing 302 may be formed of any suitable material, such as stainless steel, Hastelloy, etc. Flange housing 302 may include components configured and arranged for coupling to a reaction chamber (e.g., Figure 1 The front 304 and back 424 of the reaction chamber 104 Figure 6 (Shown in the diagram) and a substrate channel 306 extending from the front end 304 through the flange housing 302 to the back end 424. The substrate channel 306 is sized to allow a substrate to be inserted and removed through the flange housing 302 for loading / unloading operations. The flange housing 302 also includes a groove 308 disposed in the front end 304 of the flange housing. The groove 308 surrounds the substrate channel 306 and is configured to receive a sealing element (not shown), such as an O-ring.

[0056] According to examples of this disclosure, the flange housing 302 may include a front housing and a rear housing. Figure 4 Cross-sectional views of the front and rear housings are shown. Figure 5 A front view of a portion of the rear surface of the front housing is shown, and Figure 6 A cross-sectional view of the assembled flanged housing is shown.

[0057] According to an example of this disclosure, the front housing 402 ( Figure 4 The front housing 304 includes a front surface 304 of the flange assembly. The front surface 304 includes a recess 308 configured to receive a sealing element. The front housing 402 also includes a rear surface 404. The rear surface 404 of the front housing 402 may include a first engagement surface 406 configured to engage with the rear housing 418 of the flange housing 302 (described in detail below). The first engagement surface 406 may extend along, for example, a first vertical plane parallel to, a longitudinal axis 414 of the housing. In various embodiments, the rear surface 404 also includes a recessed surface 420. In such embodiments, the recessed surface 420 may include a recessed portion 410. A front view of the rear surface 404 (e.g.) Figure 5 The diagram shows that the rear surface 404 of the front housing 402 includes a plurality of recesses 410, each of which is separated and isolated by a portion of a raised first connecting surface 406. Furthermore, the recessed surface 420 of the front housing 402 includes a conduit surface 412. Figure 4 It extends along a second vertical plane, for example, parallel to the longitudinal axis 414 of the housing between the upper portion 416 of the recessed portion 410 and the front portion of the substrate channel 426. In some embodiments, the conduit surface is recessed from the first connecting surface 406. Figure 5 The rear surface 404 of the front housing is shown to include a plurality of conduit surfaces 412, each of which is separated and isolated by a portion of a raised first connecting surface 406 and connected to each of the recesses 410.

[0058] According to an example of this disclosure, the rear housing 418 includes a second coupling surface 422, a back surface 424, and a rear portion of a substrate channel 428.

[0059] According to examples of this disclosure, the flange housing 302 can be assembled by attaching (i.e., securing) the rear housing to the front housing. Figure 6 A cross-sectional view of the assembled flange housing 302 is shown, which includes a front housing 402 and a rear housing 418 connected to each other. Figure 6 As shown, the first connecting surface 406 of the front housing 402 contacts the second connecting surface 422 of the rear housing 418, thereby forming a flange housing 302.

[0060] According to an example of this disclosure, the rear housing 418 can be mechanically secured to the front housing 402 by a series of threaded joints 602 inserted from the back surface 424 of the rear housing 418. In such an example, each of the threaded joints 602 can be inserted into a first engagement surface 406 of the front housing 402. In some embodiments, the threaded joints 602 are positioned within the flange housing 302 in a non-wetting region of the flange assembly 220. In other words, the series of threaded joints 602 does not come into contact with the process gas injected into the flange housing 302, thereby preventing contamination of the process gas injected into the flange assembly.

[0061] According to examples of this disclosure, the rear housing 418 is joined to the front housing 402 to form an interface 604 disposed between a first joining surface 406 and a second joining surface 422. In various embodiments, the joining of the front housing 402 and the rear housing 418 forms a plurality of gas expansion chambers 606 and a plurality of gas conduits 608. In such embodiments, the protrusions of the rear surface 406 (e.g., Figure 5 (As shown) can separate and isolate each of the gas expansion collection chambers 606. In such an embodiment, the protrusions on the rear surface 406 (such as...) Figure 5 (As shown) Each of the gas conduits 608 can be separated and isolated. (By...) Figure 6 The area enclosed by the dashed ellipse in the middle Figure 7 The details are expanded to further illustrate the formation of the gas expansion collection chamber and the gas conduit.

[0062] Based on the examples in this disclosure and referenced Figure 7 Each of the plurality of gas expansion chambers 606 is at least partially defined by a second coupling surface 422 of the rear housing 418 and a recess 410 disposed in the rear surface of the front housing 402. In various embodiments, each of the plurality of gas expansion chambers 606 formed in the flange assembly 220 is fluidly coupled to one of the plurality of gas channels 222, such as Figure 3 As shown.

[0063] In some embodiments, each of the plurality of gas expansion collecting chambers 606 may have a collecting chamber width 706 between 4 mm and 40 mm, between 5 mm and 20 mm, and between 6 mm and 10 mm. In some embodiments, each of the plurality of gas expansion collecting chambers 606 may have a collecting chamber width 706 equal to or less than 40 mm, 20 mm, 10 mm, 7 mm, or equal to or less than 4 mm. In some embodiments, each of the plurality of gas expansion collecting chambers 606 may have a collecting chamber width 706 equal to or greater than 4 mm, 10 mm, 20 mm, 30 mm, or equal to or greater than 40 mm.

[0064] In some embodiments, each of the plurality of gas expansion collecting chambers 606 may have a collecting chamber height 708 between 5 mm and 50 mm, between 10 mm and 25 mm, and between 10 mm and 12 mm. In some embodiments, each of the plurality of gas expansion collecting chambers 606 may have a collecting chamber height 708 equal to or less than 50 mm, 25 mm, 12 mm, 10 mm, or equal to or less than 5 mm. In some embodiments, each of the plurality of gas expansion collecting chambers 606 may have a collecting chamber height 708 equal to or greater than 5 mm, 10 mm, 12 mm, 25 mm, or equal to or greater than 50 mm.

[0065] In another embodiment, the connection between the front housing 402 and the rear housing 418 forms a plurality of gas conduits 608. In such an embodiment, the plurality of gas conduits 608 ( Figure 7 Each of the plurality of gas conduits 608 formed in the flange assembly 220 is at least partially defined by a second coupling surface 422 of the rear housing 418 and a conduit surface 412 of the rear surface of the front housing 402. In various embodiments, each of the plurality of gas conduits 608 formed in the flange assembly 220 is fluidly coupled to one of the plurality of gas expansion collection chambers 606, such as Figure 3 and Figure 7 As shown. For example, multiple gas conduits 608 ( Figure 7 Each of the plurality of gas conduits 608 may include a conduit inlet 710 fluidly connected to one of the plurality of gas expansion collection chambers 606. Furthermore, each of the plurality of gas conduits 608 may include a conduit outlet 712 configured to inject process gas into the reaction chamber (e.g., Figure 1 In the reaction chamber 104).

[0066] In some embodiments, each of the plurality of gas conduits 608 may have a conduit width 702 between 1 mm and 5 mm, between 1.5 mm and 4 mm, or between 2 mm and 3 mm. In some embodiments, each of the plurality of gas conduits 608 may have a conduit width 702 equal to or less than 5 mm, 4 mm, 3 mm, 2 mm, or equal to or less than 1 mm. In some embodiments, each of the plurality of gas conduits 608 may have a conduit width 702 equal to or greater than 1 mm, 1.5 mm, 2 mm, 3 mm, or equal to or greater than 5 mm.

[0067] In some embodiments, each of the plurality of gas conduits 608 may have a conduit length 704 between 0.5 mm and 12 mm, between 1 mm and 10 mm, and between 2 mm and 6 mm (i.e., as shown in the figure). Figure 7(The height of the conduit shown). In some embodiments, each of the plurality of gas conduits 608 may have a conduit length 704 equal to or less than 12 mm, 10 mm, 6 mm, 3 mm, 2 mm, or equal to or less than 1 mm. In some embodiments, each of the plurality of gas conduits 608 may have a conduit length 704 equal to or greater than 1 mm, 2 mm, 6 mm, 10 mm, or equal to or greater than 12 mm.

[0068] Various embodiments of this disclosure also provide methods for supplying a process gas to a reaction chamber. In such embodiments, the process gas is supplied to the reaction chamber at a desired process gas rate, wherein variations in the peak rate of the process gas are reduced.

[0069] Turn to the attached image again. Figure 8 A method 800 for supplying a process gas to a reaction chamber is shown. According to an example of this disclosure, method 800 may include supplying a precursor gas from a gas source assembly to a plurality of precursor gas lines (step 802), and supplying an etchant gas from a gas source assembly to a plurality of etchant gas lines (step 804).

[0070] According to an example of this disclosure, method 800 may further include mixing precursor gas and etchant gas in a plurality of manifolds to form a process gas, wherein each of the plurality of manifolds includes a first input port fluidly connected to one of the plurality of precursor gas lines, a second input port fluidly connected to one of the plurality of etchant gas lines, and an output port for discharging the process gas (step 806).

[0071] According to an example of this disclosure, method 800 may further include supplying a process gas from a plurality of bimanifolds to a plurality of gas channels formed within a flange assembly, wherein the flange assembly is coupled to a reaction chamber (step 808).

[0072] According to an example of this disclosure, method 800 may further include feeding a process gas from a plurality of gas channels into a plurality of gas expansion chambers formed within a flange assembly, wherein each of the plurality of gas expansion chambers is fluidly coupled to one of the plurality of gas channels (step 810).

[0073] According to an example of this disclosure, method 800 may further include feeding a process gas from a plurality of gas expansion chambers into a plurality of gas conduits, wherein each of the plurality of gas conduits is fluidly connected to one of the plurality of gas expansion chambers (step 812).

[0074] According to examples of this disclosure, method 800 may further include injecting a process gas from a plurality of gas conduits into a reaction chamber.

[0075] In some embodiments of method 800, the flange assembly may include a flange housing, the flange housing including a front housing and a rear housing, wherein the front housing has a first engagement surface and the rear housing has a second engagement surface, and the rear housing is secured to the front housing by engaging the first engagement surface with the second engagement surface.

[0076] In some embodiments of method 800, the front housing may further include a rear surface comprising a plurality of recesses, and each of the plurality of gas expansion chambers may be defined at least in part by the second connecting surface and one of the plurality of recesses.

[0077] In some embodiments of method 800, the rear surface of the front housing may further include a plurality of conduit surfaces, wherein each of the conduit surfaces is recessed from the first coupling surface, and wherein each of the plurality of gas conduits is at least partially defined by the second coupling surface and one of the plurality of conduit surfaces.

[0078] In some embodiments of method 800, the processing gas may be injected into the reaction chamber at a processing gas velocity between 20 and 200 m / s, between 30 and 100 m / s, or between 30 and 70 m / s. In some embodiments of method 800, the processing gas may be injected into the reaction chamber at a processing gas velocity equal to or less than 200 m / s, 100 m / s, 70 m / s, 50 m / s, 30 m / s, or equal to or less than 10 m / s.

[0079] In some embodiments of method 800, the processing gas can be injected into the reaction chamber at a processing gas velocity between 30 m / s and 70 m / s. In some embodiments, the processing gas can be injected into the reaction chamber through a plurality of gas conduits, each of the plurality of gas conduits having a conduit width equal to or greater than 1 mm, 1.5 mm, 2 mm, 3 mm, or equal to or greater than 5 mm.

[0080] For the purpose of summarizing the advantages of the present invention and its implementation relative to prior art, certain objects and advantages of the present invention have been described above. It should be understood, of course, that not all of these objects or advantages may be achieved according to any particular embodiment of the present invention. Therefore, for example, those skilled in the art will recognize that the present invention may be implemented or performed in a manner that achieves or optimizes one or more advantages as taught or suggested herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0081] All these embodiments are intended to fall within the scope of the invention disclosed herein. These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and the invention is not limited to any particular embodiment disclosed.

Claims

1. A gas injection system, comprising: a gas source assembly comprising a precursor source configured to supply a precursor gas and an etchant source configured to supply an etchant gas; a gas distribution assembly comprising: a plurality of precursor gas lines fluidly coupled to the precursor source; a plurality of etchant gas lines fluidly coupled to the etchant source; a plurality of bifurcated tubes, wherein each of the plurality of bifurcated tubes comprises a first input port fluidly coupled to one of the plurality of precursor gas lines, a second input port fluidly coupled to one of the plurality of etchant gas lines, and an output port configured to output a process gas comprising a mixture of the precursor gas and the etchant gas; and a flange assembly comprising a plurality of gas channels formed within the flange assembly, wherein each of the plurality of gas channels is fluidly coupled to the output port of one of the plurality of bifurcated tubes.

2. The gas injection system of claim 1, wherein, the flange assembly further comprises a plurality of gas plenum chambers formed within the flange assembly, wherein each of the plurality of gas plenum chambers is fluidly coupled to one of the plurality of gas channels.

3. The gas injection system of claim 2, wherein, the flange assembly further comprises a plurality of gas conduits formed within the flange assembly, wherein each of the gas conduits comprises a conduit inlet fluidly coupled to one of the plurality of gas plenum chambers and a conduit outlet configured to inject the process gas into a reaction chamber.

4. The gas injection system of claim 3, wherein, each of the plurality of gas conduits has a conduit width between 1.5 mm and 4 mm.

5. The gas injection system of claim 3, wherein, each of the plurality of gas conduits has a conduit length between 1 mm and 10 mm.

6. The gas injection system of claim 3, wherein, the flange assembly comprises a flange housing comprising a front housing and a back housing, wherein the front housing has a first coupling surface and the back housing has a second coupling surface, and the back housing is coupled to the front housing by coupling the first coupling surface to the second coupling surface.

7. The gas injection system of claim 6, wherein, the front housing further comprises a back surface comprising a plurality of recessed recesses, and each of the plurality of gas plenum chambers is at least partially defined by the second coupling surface and one of the plurality of recessed recesses.

8. The gas injection system of claim 7, wherein, the back surface of the front housing further comprises a plurality of conduit surfaces, wherein each of the conduit surfaces is recessed from the first coupling surface.

9. The gas injection system of claim 8, wherein, each of the plurality of gas conduits is at least partially defined by the second coupling surface and one of the plurality of conduit surfaces.

10. The gas injection system of claim 9, wherein, the back housing is mechanically secured to the front housing by a series of threaded joints, wherein the series of threaded joints are inserted through a back face of the back housing and connected with the first coupling surface of the front housing, each of the threaded joints is positioned within a non-wetting area of the flange assembly.

11. A reactor system, comprising: a reaction chamber; a flange assembly coupled to the reaction chamber, the flange assembly comprising: a flange housing comprising a front housing having a first coupling surface and a back housing having a second coupling surface, wherein the back housing is coupled to the front housing by coupling the first coupling surface to the second coupling surface; a plurality of gas channels formed within the front housing, a plurality of gas expansion plenums, each of the plurality of gas expansion plenums fluidically coupled to one of the plurality of gas channels, wherein each of the plurality of gas expansion plenums is at least partially defined by the second coupling surface and one of a plurality of recessed recesses disposed in the back surface of the front housing; and a plurality of gas conduits, each of the plurality of gas conduits including a conduit inlet fluidically coupled to one of the plurality of gas expansion plenums and a conduit outlet configured to inject a process gas into the reaction chamber, wherein each of the plurality of gas conduits is at least partially defined by the second coupling surface and one of a plurality of conduit surfaces disposed in the back surface of the front housing; and a gas injection system fluidically coupled to the flange assembly, the gas injection system including: a gas source assembly including a precursor source configured to supply a precursor gas and an etchant source configured to supply an etchant gas; and a gas distribution assembly including: a plurality of precursor gas lines fluidically coupled to the precursor source; a plurality of etchant gas lines fluidically coupled to the etchant source; and a plurality of bifurcated tubes, wherein each of the plurality of bifurcated tubes includes a first input port fluidically coupled to one of the plurality of precursor gas lines, a second input port fluidically coupled to one of the plurality of etchant gas lines, and an output port configured to output a process gas, the process gas including the precursor gas and the etchant gas, wherein each of the plurality of gas channels of the flange assembly is fluidically coupled to the output port of one of the plurality of bifurcated tubes.

12. The reactor system of claim 11, wherein, Each of the plurality of gas conduits has a conduit width between 1.5 mm and 4 mm.

13. The reactor system of claim 12, wherein, Each of the plurality of gas conduits has a conduit length between 1 mm and 10 mm.

14. The reactor system of claim 13, wherein, The back housing is mechanically secured to the front housing by a series of threaded joints, wherein the series of threaded joints are inserted through the back surface of the back housing and connect with the first coupling surface of the front housing, each of the threaded joints positioned within the non-wetting region of the flange assembly.

15. A method of supplying a process gas to a reaction chamber, the method comprising: supplying a precursor gas from a gas source assembly to a plurality of precursor gas lines; supplying an etchant gas from the gas source assembly to a plurality of etchant gas lines; mixing the precursor gas and the etchant gas within a plurality of bifurcated tubes to form a process gas, wherein each of the plurality of bifurcated tubes includes a first input port fluidically coupled to one of the plurality of precursor gas lines, a second input port fluidically coupled to one of the plurality of etchant gas lines, and an output port for outputting the process gas; supplying the process gas from the plurality of bifurcated tubes to a plurality of gas channels formed within a flange assembly, wherein the flange assembly is coupled to the reaction chamber; feeding the process gas from the plurality of gas channels to a plurality of gas expansion plenums formed within the flange assembly, wherein each of the plurality of gas expansion plenums is fluidically coupled to one of the plurality of gas channels; feeding the process gas from the plurality of gas expansion plenums to a plurality of gas conduits, wherein each of the plurality of gas conduits is fluidically coupled to one of the plurality of gas expansion plenums; and injecting the process gas from the plurality of gas conduits into the reaction chamber. Each of the plurality of gas conduits has a conduit width between 1.5 mm and 4 mm. Each of the plurality of gas conduits has a conduit length between 1 mm and 10 mm. The back housing is mechanically secured to the front housing by a series of threaded joints, wherein the series of threaded joints are inserted through the back surface of the back housing and connect with the first coupling surface of the front housing, each of the threaded joints positioned within the non-wetting region of the flange assembly.

15. A method of supplying a process gas to a reaction chamber, the method comprising: supplying a precursor gas from a gas source assembly to a plurality of precursor gas lines; supplying an etchant gas from the gas source assembly to a plurality of etchant gas lines; mixing the precursor gas and the etchant gas within a plurality of bifurcated tubes to form a process gas, wherein each of the plurality of bifurcated tubes includes a first input port fluidically coupled to one of the plurality of precursor gas lines, a second input port fluidically coupled to one of the plurality of etchant gas lines, and an output port for outputting the process gas; supplying the process gas from the plurality of bifurcated tubes to a plurality of gas channels formed within a flange assembly, wherein the flange assembly is coupled to the reaction chamber; feeding the process gas from the plurality of gas channels to a plurality of gas expansion plenums formed within the flange assembly, wherein each of the plurality of gas expansion plenums is fluidically coupled to one of the plurality of gas channels; feeding the process gas from the plurality of gas expansion plenums to a plurality of gas conduits, wherein each of the plurality of gas conduits is fluidically coupled to one of the plurality of gas expansion plenums; and injecting the process gas from the plurality of gas conduits into the reaction chamber. Each of the plurality of gas conduits has a conduit width between 1.5 mm and 4 mm. Each of the plurality of gas conduits has a conduit length between 1 mm and 10 mm. The back housing is mechanically secured to the front housing by a series of threaded joints, wherein the series of threaded joints are inserted through the back surface of the back housing and connect with the first coupling surface of the front housing, each of the threaded joints positioned within the non-wetting region of the flange assembly.

16. The method of claim 15, wherein, The flange assembly includes a flange housing including a front housing and a rear housing, wherein the front housing has a first coupling surface and the rear housing has a second coupling surface, and the rear housing is secured to the front housing by coupling the first coupling surface with the second coupling surface.

17. The method of claim 16, wherein, The front housing further includes a rear surface including a plurality of recessed recesses, and each of the plurality of gas expansion plenums is at least partially defined by the second coupling surface and one of the plurality of recessed recesses.

18. The method of claim 17, wherein, The rear surface of the front housing further includes a plurality of conduit surfaces, wherein each of the conduit surfaces is recessed from the first coupling surface, and wherein each of the plurality of gas conduits is at least partially defined by the second coupling surface and one of the plurality of conduit surfaces.

19. The method of claim 15, wherein, The process gas is injected into the reaction chamber at a process gas velocity between 30 meters per second and 70 meters per second.

20. The method of claim 19, wherein, The process gas is injected into the reaction chamber through the plurality of gas conduits, each of the plurality of gas conduits having a conduit width equal to or greater than 2 mm.

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