Planetary multi-piece type MOCVD (Metal Organic Chemical Vapor Deposition) reaction chamber capable of realizing levelness adjustment of base

Abstract

The invention discloses a planetary multi-chip MOCVD (Metal Organic Chemical Vapor Deposition) reaction chamber capable of realizing levelness adjustment of a base. The planetary multi-chip MOCVD reaction chamber comprises a bottom plate, a cavity, a magnetic fluid, and a horizontal adjustment assembly, a supporting assembly, a graphite base and a slide tray which are arranged in the cavity, the bottom of the cavity is connected with the bottom plate, the magnetofluid hermetically penetrates through the bottom plate and then is connected with the horizontal adjusting assembly in the cavity, the horizontal adjusting assembly is connected with the graphite base through the supporting assembly, and the multiple slide glass discs are uniformly distributed on the graphite base; when the magnetic fluid drives the horizontal adjusting assembly and the supporting assembly to rotate, the graphite base drives the slide glass disc to revolve; a laser sensor is arranged above the cavity and used for detecting the distance between each point position in the circumferential direction of the graphite base and a preset datum plane, and the levelness of the graphite base is adjusted through a horizontal adjusting assembly according to the detection result fed back by the laser sensor. The device has the functions of graphite base levelness detection, adjustment and calculation, and can realize high-precision levelness adjustment.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and more specifically to a planetary multi-plate MOCVD reaction chamber capable of adjusting the level of the base. Background Technology

[0002] MOCVD uses organic compounds of Group III and II elements and hydrides of Group V and VI elements as crystal growth source materials. It employs a thermal decomposition reaction to perform vapor-phase epitaxy on a substrate, growing thin single-crystal materials of various Group III-V and II-VI compound semiconductors and their multi-component solid solutions. Planetary multi-wafer MOCVD equipment features multiple graphite wafer disks circumferentially distributed on a graphite base, with various sizes such as 12×4 inches, 8×6 inches, and 5×8 inches. The graphite base can revolve, and the wafer disks placed circumferentially on it can rotate, compensating for non-uniformity in the temperature and flow field within the reaction chamber and improving the consistency of the growth environment between and within wafers. The revolution of the graphite base in planetary multi-wafer MOCVD equipment is driven by a motor, while the rotation of the wafer disks is achieved through air buoyancy. Deviations in the levelness of the graphite base can lead to inconsistent growth environments for each wafer, thus affecting the uniformity of the process.

[0003] Since the levelness of the graphite substrate in planetary multi-sheet MOCVD directly affects the process results, levelness detection and adjustment are crucial. Existing methods, such as manual measurement, suffer from the drawback of the measurement technique, and direct adjustment using set screws cannot meet the levelness requirements of large-diameter graphite substrates. Furthermore, the rotation of the wafer disk is achieved through air flotation, and the levelness adjustment of the graphite substrate requires ensuring that the driving gas transport processes for each air flotation path are leak-free and independent. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a planetary multi-plate MOCVD reaction chamber that is compact in structure, easy to operate and highly adjustable, and can realize the levelness adjustment of the base, in order to overcome the shortcomings of the prior art.

[0005] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is as follows: A planetary multi-plate MOCVD reaction chamber capable of adjusting the level of its base includes: a base plate, a cavity, a magnetic fluid, and a leveling adjustment assembly, a support assembly, a graphite base, and wafer trays disposed within the cavity. The base plate is mounted on the equipment platform. The bottom of the cavity is connected to the base plate. The bottom of the magnetic fluid is connected to a driving element. The top of the magnetic fluid, after being sealed through the base plate, is connected to the leveling adjustment assembly within the cavity. The leveling adjustment assembly is connected to the graphite base via the support assembly. Multiple wafer trays are evenly distributed on the graphite base. When the magnetic fluid drives the leveling adjustment assembly and the support assembly to rotate, the graphite base drives the wafer trays to revolve. A laser sensor is provided above the cavity. The laser sensor is used to detect the distance of various points on the circumference of the graphite base from a preset reference surface. Based on the detection results fed back by the laser sensor, the level of the graphite base is adjusted by the leveling adjustment assembly.

[0006] As a further improvement of the present invention, the horizontal adjustment assembly includes an upper flange, a middle flange, and a lower flange connected sequentially from top to bottom. The upper flange is connected to the support assembly, and the lower flange is connected to the base plate. Multiple through-hole adjusting screws are evenly distributed on the upper flange, and multiple grooves are evenly distributed on the upper surface of the middle flange. An adjusting lever is provided in the groove. One end of the adjusting lever contacts the adjusting screw, and the other end of the adjusting lever contacts the upper flange. When the adjusting screw is turned to push the adjusting lever to rotate, the upper flange is raised or lowered, thereby realizing the horizontal angle adjustment of the graphite base.

[0007] As a further improvement of the present invention, the bottom of the adjusting screw is provided with a hemispherical structure, and the adjusting lever is provided with a corresponding hemispherical recess.

[0008] As a further improvement of the present invention, multiple adjusting screws are marked by laser, and marking positions are set on the graphite base to distinguish the position of the slide disk, so as to achieve pairing of the marked adjusting screws with the slide disk.

[0009] As a further improvement of the present invention, the upper flange is also provided with a plurality of through fastening screws, the lower surface of the middle flange is provided with a plurality of mounting grooves, and the top of the mounting groove is provided with a connecting hole extending to the upper surface of the middle flange. A nut is placed in the mounting groove. When the upper flange and the middle flange are connected, the fastening screws pass through the connecting hole of the mounting groove and are screwed and fixed with the nut.

[0010] As a further improvement of the present invention, a disc spring is also provided in the mounting groove, and the fastening screw passes through the disc spring and is screwed and fixed with the nut.

[0011] As a further improvement of the present invention, the nut is a square nut.

[0012] As a further improvement of the present invention, the top of the magnetic fluid passes through the lower flange and the middle flange and is connected to the upper flange, and a sealing plate is provided at the connection between the upper flange and the magnetic fluid.

[0013] As a further improvement of the present invention, the magnetic fluid, the horizontal adjustment component, the support component and the graphite base are all designed with air channels. The gas enters through the air channels of the magnetic fluid, passes through the horizontal adjustment component and the support component and reaches the interior of the graphite base, and is ejected from below the substrate disk. The gas drives the substrate disk to rotate through the guide groove at the bottom of the substrate disk.

[0014] As a further improvement of the present invention, when the graphite base is adjusted for levelness, an aluminum rod is placed on the top of the cavity, and the laser sensor is mounted on the aluminum rod.

[0015] Compared with the prior art, the advantages of the present invention are as follows: 1. The planetary multi-plate MOCVD reaction chamber of the present invention enables base level adjustment. A graphite base is supported by a level adjustment component and a support component within the chamber. Multiple wafer disks are evenly distributed on the graphite base. The bottom of the magnetic fluid is connected to a driving element, and the top of the magnetic fluid is sealed and extends into the chamber, connecting to the level adjustment component. When the driving element rotates the magnetic fluid, the wafer disks revolve. Simultaneously, a laser sensor is installed above the chamber. When the graphite base needs level adjustment, the laser sensor accurately measures the distance from various points on the circumference of the graphite base to a preset reference surface. Based on the detection results fed back by the laser sensor, the level adjustment component is operated to achieve level adjustment of the graphite base. This invention features convenient detection, easy operation, and high adjustment accuracy.

[0016] 2. The planetary multi-plate MOCVD reaction chamber of this invention, capable of adjusting the level of the base, uses laser to mark multiple adjusting screws. Marking positions on the graphite base distinguish the positions of the wafer trays, allowing the marked adjusting screws to be paired with the wafer trays. Based on the detection results fed back by the laser sensor, it can quickly determine which adjusting screw needs adjustment, significantly improving operational efficiency. An adjusting lever is installed between the upper and middle flanges, utilizing the lever principle to significantly improve adjustment accuracy. A sealing plate is installed at the connection between the magnetic fluid and the upper flange, ensuring the relative independence of each air flotation path during adjustment and meeting the requirements of high-temperature processes. This invention optimizes and improves the planetary multi-plate MOCVD reaction chamber from three aspects: detection method, adjustment structure, and adjustment method. It has the functions of graphite base level detection and adjustment calculation, while achieving high-precision level adjustment. Attached Figure Description

[0017] Figure 1This is a schematic diagram of the cross-sectional structure of a planetary multi-plate MOCVD reaction chamber that enables base level adjustment in a specific embodiment of the present invention. Figure 2 This is a top view schematic diagram of the planetary multi-plate MOCVD reaction chamber with adjustable base level in a specific embodiment of the present invention; in the figure, a, b, c, d, and e represent the serial numbers of the slide disks, respectively. Figure 3 This is a schematic diagram illustrating the explosive structure principle of the regulating flange in a specific embodiment of the present invention; Figure 4 This is a schematic diagram illustrating the structural principle of the adjusting flange in a specific embodiment of the present invention; Figure 5 This is a diagram showing the correspondence between adjustment points and slide trays in a specific embodiment of the present invention; in the diagram, a, b, c, d, and e represent the slide tray numbers, and A, B, and C represent the adjustment points. Figure 6 This is a schematic diagram of the internal structure of the adjusting flange in a specific embodiment of the present invention; in the diagram, A, B, and C represent the adjusting points, respectively. Figure 7 This is a top view schematic diagram of the adjusting flange structure in a specific embodiment of the present invention; in the figure, A, B, and C represent the adjusting points respectively; Figure 8 for Figure 7 Schematic diagram of the structural principle in the DD direction; Figure 9 This is a schematic diagram of the adjustment process of the graphite base in a specific embodiment of the present invention; Legend: 1. Base plate; 2. Cavity; 3. Magnetofluid; 4. Horizontal adjustment assembly; 5. Support tube; 6. Support plate; 7. Graphite base; 8. Carrier plate; 9. Aluminum rod; 10. Laser sensor; 41. Upper flange; 411. Threaded hole; 42. Sealing plate; 43. Middle flange; 431. Groove; 432. Mounting groove; 44. Disc spring; 45. Nut; 46. Lower flange; 47. Adjusting screw; 48. Adjusting lever; 49. Fastening screw. Detailed Implementation

[0018] The present invention will be further described below with reference to the accompanying drawings and specific preferred embodiments, but this does not limit the scope of protection of the present invention.

[0019] In the description of this invention, it should be understood that the terms "side", "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this invention.

[0020] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more unless otherwise explicitly specified.

[0021] Example like Figure 1 and Figure 2 As shown, the planetary multi-plate MOCVD reaction chamber of the present invention, capable of adjusting the level of the base, includes: a base plate 1, a cavity 2, a magnetic fluid 3, and a level adjustment assembly 4, a support tube 5, a support disk 6, a graphite base 7, and wafer trays 8 disposed within the cavity 2. The base plate 1 is mounted on the equipment platform. The bottom of the cylindrical cavity 2 is connected to the base plate 1. The bottom of the magnetic fluid 3, which includes a multi-channel structure, is connected to a drive motor. The top of the magnetic fluid 3, after sealing and penetrating the base plate 1, is connected to the level adjustment assembly 4 within the cavity 2. The level adjustment assembly 4 is connected to the graphite base 7 via the support tube 5 and the support disk 6. Multiple wafer trays 8 are evenly distributed on the graphite base 7. When the magnetic fluid 3 drives the level adjustment assembly 4, the support tube 5, and the support disk 6 to rotate, the graphite base 7 drives the wafer trays 8 to revolve. When the graphite base 7 is leveled, an aluminum rod 9 is placed on the top of the cavity 2, and a laser sensor 10 is mounted on the aluminum rod 9. The laser sensor 10 is used to detect the distance of each point on the circumference of the graphite base 7 from the preset reference surface. Based on the detection results fed back by the laser sensor 10, the horizontal angle of the graphite base 7 is adjusted by the horizontal adjustment component 4. In this embodiment, the support tube 5, the support disk 6, and the substrate disk 8 are all made of graphite.

[0022] It should be noted that the levelness test involves rotating the graphite base 7 by a fixed angle, the angle of which is determined by the wafer size. For example, for a 12×4 inch wafer, the rotation angle is 360° / 12=30° each time; for an 8×6 inch wafer, it is 360° / 8=45°. This measures the height of the graphite base 7 on both sides of the wafer tray 8 below the end face of the cavity 2. Taking a 5×8 inch wafer as an example, the wafer tray 8 rotates 62°, the system automatically collects a height value and stores it. After one rotation, five sets of data are measured, and the maximum difference is calculated, which is the levelness of the graphite base 7.

[0023] The graphite base 7 levelness detection method used in this embodiment involves placing a tooling aluminum rod 9 at a fixed position on the top of the cavity 2. A laser sensor 10 is installed on the aluminum rod 9, and the drive motor rotates at a fixed angle to collect the height value of each set point. This method has good repeatability and eliminates errors caused by human factors during manual measurement.

[0024] In this embodiment, air channels are designed in the magnetic fluid 3, the horizontal adjustment component 4, the support tube 5, the support disk 6, and the graphite base 7. The gas enters through the air channel of the magnetic fluid 3, passes through the horizontal adjustment component 4, the support tube 5, and the support disk 6, and reaches the interior of the graphite base 7. It is then ejected from below the substrate disk 8 and is driven to rotate by the flow guide groove at the bottom of the substrate disk 8.

[0025] like Figure 3 and Figure 4 As shown, the horizontal adjustment assembly 4 includes an upper flange 41, a middle flange 43, and a lower flange 46 connected sequentially from top to bottom. The lower flange 46 is used to fix the magnetic fluid 3, the middle flange 43 is used to fix the upper flange 41, and the upper flange 41 is used for angle adjustment. The upper flange 41 is connected to the support pipe 5, and the lower flange 46 is connected to the base plate 1. Multiple through-hole adjusting screws 47 are evenly distributed on the upper flange 41, and multiple grooves 431 are evenly distributed on the upper surface of the middle flange 43. Adjusting levers 48 are provided in the grooves 431. One end of the adjusting lever 48 contacts the adjusting screw 47, and the other end of the adjusting lever 48 contacts the upper flange 41. When the adjusting screw 47 is turned to pry the adjusting lever 48, the upper flange 41 is driven to rise or fall, thereby realizing the horizontal angle adjustment of the graphite base 7. In other embodiments, the middle flange 43 and the lower flange 46 can be directly processed into one piece when the structure of the cavity 2 changes, and the horizontal adjustment assembly 4 is not limited to a three-layer design.

[0026] like Figure 7 and Figure 8 As shown, the bottom of the adjusting screw 47 is designed with a hemispherical structure, and the adjusting lever 48 is provided with a corresponding hemispherical recess to prevent the adjusting lever 48 from sliding out during installation and use.

[0027] In this embodiment, a threaded hole is machined on the upper flange 41 to allow the adjusting screw 47 to be screwed in. The screwing depth of the adjusting screw 47 can adjust the angle of the adjusting lever 48 and the middle flange 43, thereby changing the angle of the upper flange 41 and ultimately achieving the adjustment of the level of the graphite base 7. Furthermore, the threaded hole in the upper flange 41 for installing the adjusting screw 47 is machined with a fine thread to ensure that the adjusting screw 47 has a smaller adjustment range.

[0028] like Figure 8 As shown, the high-precision adjustment principle of the upper flange 41 is as follows: the bottom and top of the adjusting lever 48 are both designed with arc-shaped structures, and there is only one contact point with each of the middle flange 43 and the upper flange 41, forming a lever principle. When the adjusting screw 7 is screwed in to a depth of h1, the change in the upper flange 41 is only h1*(L1 / L2). The structural design of the adjusting lever 48 can effectively improve the adjustment accuracy. For example, when L1 / L2=10, when the adjusting screw 47 is screwed in by 0.1mm, the upper flange 41 only changes by 0.01mm.

[0029] like Figure 5 and Figure 6 As shown, the three adjusting screws 47 are marked with a laser, designated as adjustment points A, B, and C respectively. When the MOCVD equipment's control system detects the levelness of the graphite base 7, it compares and calculates the adjustment process based on the height standard value with the measurement values ​​fed back by the laser sensor 10 at each measurement point. The adjustment process is as follows: Figure 9 As shown, the graphite base 7 has markings to distinguish the positions of the slide trays 8. The five slide trays 8 are marked a, b, c, d, and e, respectively, so that the adjusting screws 47 after marking can be paired with the slide trays 8. For example, if the adjusting point A corresponds to slide trays a, c, and d, tightening the adjusting screw 47 at point A will raise slide tray 8 8 8 and lower slide trays c and d 8. After the levelness of the graphite base 7 is judged to be qualified, the aluminum rod 9 can be removed, and the MOCVD equipment can proceed to the next step of the re-run.

[0030] like Figure 4 and Figure 8 As shown, the upper flange 41 has multiple through-bolts 49 evenly distributed on it, and the lower surface of the middle flange 43 has multiple mounting grooves 432 evenly distributed on it. The top of each mounting groove 432 has a connecting hole extending to the upper surface of the middle flange 43. A square nut 45 is placed inside the mounting groove 432. When the upper flange 41 and the middle flange 43 are connected, the fastening bolts 49 pass through the connecting holes of the mounting grooves 432 and are then screwed onto the nuts 45 for fixation. The middle flange 43 and the lower flange 46 are fixed together using bolts.

[0031] Furthermore, a disc spring 44 is also provided in the mounting groove 432. The fastening screw 49 passes through the disc spring 44 and is screwed and fixed to the nut 45. The disc spring 44 can provide preload to ensure that the upper flange 41 and the middle flange 43 can be tightened even with gaps, and will not loosen due to movement or impact. The nut 45 is designed to be square so that it will not rotate during the tightening of the fastening screw 49.

[0032] like Figure 3 and Figure 8 As shown, the top of the output shaft of the magnetofluid 3 passes through the lower flange 46 and the middle flange 43 and is then fixedly connected to the upper flange 41. A sealing plate 42 is provided at the connection between the upper flange 41 and the output shaft of the magnetofluid 3. The sealing plate 42 has multiple through holes to facilitate the passage of air passages.

[0033] In this embodiment, the sealing plate 42 is located between the upper flange 41 and the output shaft of the magnetic fluid 3. The air flotation driving gas enters the upper flange 41 from the end face of the output shaft of the magnetic fluid 3 through the sealing plate 42, and then enters the support pipe 5, support plate 6, and graphite base 7. To achieve stable rotation and independent adjustment between each air flotation unit, each air passage must be kept independent and sealed throughout the air flotation gas transportation process to prevent cross-contamination. When the upper flange 41 is adjusted, it undergoes a certain angular change with the middle flange 43, that is, a certain angular change with the end face of the magnetic fluid 3. The sealing plate 42 can ensure that within a certain angle, both the upper flange 41 and the end face of the magnetic fluid 3 are in a sealed state. Considering the high process temperature and meeting the cleanliness requirements of the chamber, the sealing plate 42 can be, but is not limited to, using FKMM or graphite grease, and has compressibility. Air holes are machined on the sealing plate 42 to ensure that the air flotation driving gas can effectively enter the horizontal adjustment assembly 4.

[0034] In this embodiment, the levelness data of the graphite base 7 can be measured, adjusted, and stored simply and effectively. Height data is measured by a drive motor rotating in conjunction with a laser sensor 10, eliminating the influence of human measurement factors. The adjusting screw 47 uses a fine thread to improve accuracy, and the adjusting lever 48 utilizes the lever principle to effectively amplify the adjustment accuracy, ensuring high-precision adjustment capability. The design of the sealing plate 42 ensures sealed isolation between multiple air flotation air channels, allowing them to remain independent even after angle changes occur during levelness adjustment. This invention can meet the adjustment needs of graphite bases 47 of various wafer sizes and has strong versatility.

[0035] The above description is merely a preferred embodiment of the present invention. The scope of protection of the present invention is not limited to the above embodiments. All technical solutions falling within the scope of the present invention's concept are within the scope of protection of the present invention. It should be noted that for those skilled in the art, any improvements and modifications made without departing from the principles of the present invention should also be considered within the scope of protection of the present invention.

Claims

1. A planetary multi-plate MOCVD reaction chamber capable of adjusting the levelness of its base, characterized in that, include: The equipment comprises a base plate (1), a cavity (2), a magnetic fluid (3), and a horizontal adjustment assembly (4), a support assembly, a graphite base (7), and a slide plate (8) disposed within the cavity (2). The base plate (1) is mounted on the equipment platform. The bottom of the cavity (2) is connected to the base plate (1). The bottom of the magnetic fluid (3) is connected to the driving element. The top of the magnetic fluid (3) is sealed through the base plate (1) and then connected to the horizontal adjustment assembly (4) within the cavity (2). The horizontal adjustment assembly (4) is connected to the graphite base (7) via the support assembly. The graphite base (7) is connected to the magnetic fluid (3), and multiple slide disks (8) are evenly distributed on the graphite base (7). When the magnetic fluid (3) drives the horizontal adjustment component (4) and the support component to rotate, the graphite base (7) drives the slide disks (8) to revolve. A laser sensor (10) is provided above the cavity (2). The laser sensor (10) is used to detect the distance of each point on the circumference of the graphite base (7) from the preset reference surface. According to the detection result fed back by the laser sensor (10), the horizontality of the graphite base (7) is adjusted by the horizontal adjustment component (4).

2. The planetary multi-plate MOCVD reaction chamber with adjustable base level as described in claim 1, characterized in that, The horizontal adjustment assembly (4) includes an upper flange (41), a middle flange (43), and a lower flange (46) connected sequentially from top to bottom. The upper flange (41) is connected to the support assembly, and the lower flange (46) is connected to the base plate (1). Multiple through-hole adjusting screws (47) are evenly distributed on the upper flange (41). Multiple grooves (431) are evenly distributed on the upper surface of the middle flange (43). An adjusting lever (48) is provided in the groove (431). One end of the adjusting lever (48) is in contact with the adjusting screw (47), and the other end of the adjusting lever (48) is in contact with the upper flange (41). When the adjusting screw (47) is turned to push the adjusting lever (48) to rotate, the upper flange (41) is raised or lowered, thereby realizing the horizontal angle adjustment of the graphite base (7).

3. The planetary multi-plate MOCVD reaction chamber with adjustable base level as described in claim 2, characterized in that, The bottom of the adjusting screw (47) is set as a hemispherical structure, and the adjusting lever (48) is provided with a corresponding hemispherical recess.

4. The planetary multi-plate MOCVD reaction chamber with adjustable base level according to claim 2, characterized in that, Multiple adjusting screws (47) are marked by laser, and marking positions are set on the graphite base (7) to distinguish the position of the slide plate (8) so as to achieve pairing of the marked adjusting screws (47) with the slide plate (8).

5. The planetary multi-plate MOCVD reaction chamber with adjustable base level according to claim 2, characterized in that, The upper flange (41) is also evenly distributed with multiple through fastening screws (49), and the lower surface of the middle flange (43) is evenly distributed with multiple mounting grooves (432). The top of the mounting groove (432) is provided with a connecting hole extending to the upper surface of the middle flange (43). A nut (45) is placed in the mounting groove (432). When the upper flange (41) and the middle flange (43) are connected, the fastening screws (49) pass through the connecting hole of the mounting groove (432) and are screwed and fixed with the nut (45).

6. The planetary multi-plate MOCVD reaction chamber with adjustable base level according to claim 5, characterized in that, The mounting groove (432) is also provided with a disc spring (44), and the fastening screw (49) passes through the disc spring (44) and is screwed and fixed with the nut (45).

7. The planetary multi-plate MOCVD reaction chamber with adjustable base level according to claim 5, characterized in that, The nut (45) is a square nut.

8. The planetary multi-plate MOCVD reaction chamber with adjustable base level according to any one of claims 2 to 7, characterized in that, The top of the magnetic fluid (3) passes through the lower flange (46) and the middle flange (43) and is connected to the upper flange (41), and a sealing plate (42) is provided at the connection between the upper flange (41) and the magnetic fluid (3).

9. The planetary multi-plate MOCVD reaction chamber with adjustable base level according to any one of claims 1 to 7, characterized in that, The magnetic fluid (3), the horizontal adjustment component (4), the support component and the graphite base (7) are all designed with air channels. The gas enters through the air channel of the magnetic fluid (3), passes through the horizontal adjustment component (4) and the support component, and reaches the interior of the graphite base (7). It is then ejected from below the slide plate (8) and is driven to rotate by the flow guide groove at the bottom of the slide plate (8).

10. The planetary multi-plate MOCVD reaction chamber with adjustable base level according to any one of claims 1 to 7, characterized in that, When the graphite base (7) is leveled, an aluminum rod (9) is placed on top of the cavity (2), and the laser sensor (10) is mounted on the aluminum rod (9).

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