Electrocoppering leveling agent for blind hole filling and application thereof

Abstract

The invention provides an electro-coppering leveling agent for blind hole filling and application of the electro-coppering leveling agent. The electro-coppering leveling agent is obtained through copolymerization of an amide compound, an aliphatic tertiary amine compound and an aromatic nitrogen heterocyclic compound. The copolymer leveling agent provided by the invention is added into an electroplating solution for copper interconnection electroplating, so that the diffusion migration capability can be improved, the adsorption and desorption activity can be balanced, the generation of in-hole filling morphology defects and subsequent reliability risks can be avoided, the surface coverage and the adsorption stability can be adjusted, and an effective working concentration window of an additive can be regulated and controlled; therefore, the electroplating quality and reliability of the electroplating liquid composition in trepanning filling and pattern co-plating are comprehensively improved; and the method can meet the requirements of electroplating filling and pattern co-plating of the perforated structure in a certain depth-to-width ratio span range on the wafer and the substrate, has the industrial application advantages of wide adaptive scene, simplicity and convenience in maintenance and control, low production cost and the like, and can be applied to the fields of integrated circuit manufacturing, integrated circuit packaging and the like related to perforated structure copper interconnection electroplating.

Description

Technical Field

[0001] This invention belongs to the field of electronic electroplating technology, specifically relating to an electroplating copper leveling agent for blind hole filling and its application. Background Technology

[0002] Electroplating copper is a fundamental and universal technology used in chip manufacturing, advanced packaging, and circuit board manufacturing to achieve horizontal and vertical electrical interconnections. It enables the smooth and uniform filling of openings of different shapes and sizes, such as damascus trenches, redistribution layers, microbumps, through-silicon vias (TSVs), glass vias (SIVs), and micro-blind vias. In addition to copper sulfate, sulfuric acid, and chloride ions, the electroplating solution requires the addition of organic additives such as inhibitors, accelerators, and leveling agents to control the appearance, growth morphology, and material properties of the plating. Among these, the leveling agent is the core component that determines the plating filling method and performance.

[0003] With the miniaturization and integration of integrated circuits, the electroplating filling of copper interconnects on semiconductors and circuit boards has also faced new development challenges: On the one hand, the aspect ratio range of open-hole interconnect structures has been further expanded, including both silicon through-holes with a large aspect ratio of 10:1 or more and redistribution layer pattern holes with a small aspect ratio of less than 0.5:1. It is necessary to develop high-performance electroplating leveling agents and electroplating solution formulations to match the design and processing of new interconnect structures; On the other hand, in actual production, it is expected that the same electroplating solution can meet the defect-free filling of interconnect structures of different sizes and types by simply adjusting the component concentration and current density, thereby reducing the cost problems and quality fluctuations caused by switching electroplating solutions. The appearance requirements for electroplating filling of open-hole structures generally include: (1) bright and flat appearance with uniform thickness; (2) as small a depression or protrusion value as possible at the orifice, and coplanarity of different patterns; (3) no voids, gaps or other defects in the orifice; (4) based on the filling quality, the current density should be increased as much as possible and the process control window should be expanded.

[0004] To meet the filling requirements of complex open-hole interconnect structures, the industry has developed various leveling agent molecular systems and electroplating solutions with synergistic effects of multiple leveling agents. However, in the process of technological updates and iterations, how to precisely control the morphology and optimize the performance of electroplating solutions and materials through the design and synthesis of novel additives remains a key focus and challenge in the industry's technological development. Therefore, how to provide an electroplating solution that can adapt to different open-hole types and sizes, precisely control the growth morphology, and ensure material performance has become an urgent problem to be solved. Summary of the Invention

[0005] To address the shortcomings of existing technologies, the present invention aims to provide a copper plating leveling agent for blind via filling and its application. The copolymer leveling agent provided by this invention, when added to an electroplating solution for copper interconnect electroplating, not only improves diffusion and migration capabilities and balances adsorption-desorption activity, avoiding defects in the in-hole filling morphology and subsequent reliability risks, but also adjusts surface coverage and adsorption stability, and regulates the effective working concentration window of the additive. This comprehensively improves the electroplating quality and reliability of the electroplating solution composition in both via filling and pattern co-plating. Furthermore, it can meet the requirements for via filling and pattern co-plating of open-hole structures with a certain aspect ratio range on wafers and substrates. It has advantages for industrial application, including wide applicability, simple maintenance and management, and low production costs. It can be applied in integrated circuit manufacturing, integrated circuit packaging, circuit board manufacturing, and photovoltaic manufacturing fields involving copper interconnect electroplating with open-hole structures.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] In a first aspect, the present invention provides an electroplating copper leveling agent for blind hole filling, wherein the electroplating copper leveling agent is obtained by copolymerization reaction of amide compound with aliphatic tertiary amine compound and aromatic nitrogen heterocyclic compound;

[0008] The structure of the amide compound is shown in Formula I:

[0009]

[0010] Formula I;

[0011] In the formula, x is selected from oxygen or sulfur, each R1 is independently selected from any one of imino, methylene, amide, carbonyl, urea, hydrazide or benzenesulfonamide, R2 is selected from substituted or unsubstituted C1-C12 alkylene or substituted or unsubstituted C1-C12 alkene, and R3 is selected from the aliphatic halogenated hydrocarbon group shown in Formula II or the aromatic halogenated hydrocarbon group shown in Formula III.

[0012]

[0013] In the formula, x1 and x2 are independently selected from any one of fluorine, chlorine, bromine or iodine, y is selected from carbonyl or methylene, n is an integer from 1 to 5 (1, 2, 3, 4, 5), and R4 is selected from hydrogen, C1-C6 alkyl or C1-C6 alkoxy.

[0014] The aforementioned leveling agents are prepared through copolymerization reactions of selected raw materials. They possess a first ionic coordinating group (such as urea, thiourea, urea, acylurea, etc.) that regulates the leveling agent's intrapore migration and coverage ability; a second coordinating adsorption group (such as ether, alcohol, ketone, ester) that regulates the leveling agent's non-selective adsorption stability at the surface; and a third electrostatic adsorption group (such as quaternary ammonium, conjugated heterocycles) that regulates the leveling agent's selective adsorption intensity at the discharge site. The synergistic effect of these three groups improves the leveling agent's ability to fill various open-hole interconnect structures on electroplated wafers and substrates, avoiding defects in the intrapore filling morphology and subsequent reliability risks. Simultaneously, the copolymer molecular system can adjust surface coverage and adsorption stability, controlling the effective working concentration window of the additive to meet industrial application requirements.

[0015] Preferably, the structure of the aliphatic tertiary amine compound is shown in Formula IV:

[0016]

[0017] Formula IV;

[0018] In the formula, R5 is selected from any one of substituted or unsubstituted C1-C20 alkylene or substituted or unsubstituted C1-C20 alkeneoxy groups, and R6, R7, R8, and R9 are independently selected from any one of substituted or unsubstituted C1-C6 alkyl or substituted or unsubstituted C1-C6 alkoxy groups.

[0019] Preferably, the substituents include methyl or ethyl groups.

[0020] Preferably, R6, R7, R8, and R9 are selected from methyl or ethyl.

[0021] Preferably, the structure of the aromatic nitrogen heterocyclic compound is as shown in Formula V or Formula VI:

[0022]

[0023] in R represents any one of the following: an aromatic heterocycle, an aromatic heterocyclic fused ring, or an aromatic heterocyclic combined ring containing at least one unbonded hydrogen atom and a nitrogen atom. 10 Selected from substituted or unsubstituted C1-C6 alkylene groups, It refers to any one of the following: aromatic heterocycle, aromatic heterocyclic fused ring, or aromatic heterocyclic combined ring containing at least two unbonded hydrogen atoms and nitrogen atoms.

[0024] Preferably, the aliphatic tertiary amine compound includes any one of N,N,N',N'-tetramethyl-1,4-butanediamine, N,N,N',N'-tetramethyl-1,6-hexanediamine, N,N,N',N'-tetramethyl-1,3-diaminobutane or dimethylaminoethyl ether, with N,N,N',N'-tetramethyl-1,6-hexanediamine being the most preferred.

[0025] Preferably, the aromatic nitrogen heterocyclic compound comprises any one of 4,4'-bipyridine, 4,4-trimethylenedipyridine, 1,2-bis(4-pyridyl)ethane, 1,3-bis(2-pyridyl)propane, pyrazine, N-methylimidazolium ring, 1-ethylimidazolium, 1-isopropylimidazolium, 1-propylimidazolium, 1,5-naphthidine, quinoxaline, or phenolazine, preferably 4,4'-bipyridine or pyrazine.

[0026] Preferably, the amide compound is obtained by reacting an isocyanate halide or an isothiocyanate halide with a bis-primary amine compound.

[0027] Preferably, the isocyanate halide includes aliphatic isocyanate halides or aromatic isocyanate halides.

[0028] Preferably, the isothiocyanate halide includes aliphatic isothiocyanate halides or aromatic isothiocyanate halides.

[0029] Preferably, the structure of the aliphatic isocyanate halide or aliphatic isothiocyanate halide is as shown in Formula VII:

[0030]

[0031] Equation VII;

[0032] In the formula, x3 is selected from fluorine, chlorine, bromine or iodine, y1 is selected from carbonyl or methylene, z is selected from oxygen or sulfur, and n is an integer from 1 to 5.

[0033] Preferably, the structure of the aromatic isocyanate halide or aromatic isothiocyanate halide is as shown in Formula VIII:

[0034]

[0035] Formula VIII;

[0036] In the formula, x4 is selected from fluorine, chlorine, bromine or iodine, z1 is selected from oxygen or sulfur, and R 11 Selected from C1-C6 alkyl or C1-C6 alkoxy;

[0037] Preferably, the isocyanate halide includes any one of chloroacetyl isocyanate, p-chlorophenyl isocyanate, m-chlorophenyl isocyanate, o-chlorophenyl isocyanate, 2-chloroethyl isocyanate, 3-chloropropyl isocyanate, 6-chlorohexyl isocyanate, p-bromophenyl isocyanate, m-bromophenyl isocyanate or o-bromophenyl isocyanate, preferably chloroacetyl isocyanate or 3-chloropropyl isocyanate.

[0038] Preferably, the isothiocyanate halide includes any one of 2-chloroethyl isothiocyanate, 2-bromoethyl isothiocyanate, 3-bromopropyl isothiocyanate, 3-chloropropyl isothiocyanate, p-chlorophenyl isothiocyanate, m-chlorophenyl isothiocyanate or o-chlorophenyl isothiocyanate, with 3-chloropropyl isothiocyanate being the most preferred.

[0039] Preferably, the structure of the bisamine compound is shown in Formula IX:

[0040]

[0041] Formula IX;

[0042] In the formula, R 12 Selected from substituted or unsubstituted C1-C20 alkylene or substituted or unsubstituted C1-C20 alkeneoxy groups, each R 13 It is independently selected from any one of imino, methylene, amide, carbonyl, urea, hydrazide or benzenesulfonamide, preferably methylene.

[0043] Preferably, the bis(primary)amine compound comprises any one of propylenediamine, butanediamine, pentanediamine, hexanediamine, 2,2′-(ethylenedioxy)bis(ethylamine), 1,11-diamino-3,6,9-trioxadecane, 4,7,10-trioxa-1,13-tridecanediamine, polyetheramine, p-phenylenediamine, adipamide, 6-aminohexanoamide, octanoic acid hydrazide, heptane hydrazide, adipic acid hydrazide, 1,3-benzene disulfonamide, or 1,4-benzene disulfonamide, preferably 4,7,10-trioxa-1,13-tridecanediamine or polyetheramine.

[0044] Preferably, the weight-average molecular weight of the copper plating leveling agent is 500-10000 g / mol, such as 500 g / mol, 1000 g / mol, 2000 g / mol, 3000 g / mol, 4000 g / mol, 5000 g / mol, 6000 g / mol, 7000 g / mol, 8000 g / mol, 9000 g / mol, or 10000 g / mol, but is not limited to the values ​​listed above. Other unlisted values ​​within the above range are also applicable.

[0045] In a second aspect, the present invention provides an electroplating solution composition comprising water, copper salt, hydrochloric acid, sulfuric acid, inhibitor, accelerator, and the copper leveling agent as described above.

[0046] Preferably, the concentration of the copper plating leveling agent is 0.5-100 mg / L, such as 0.5 mg / L, 10 mg / L, 20 mg / L, 30 mg / L, 40 mg / L, 50 mg / L, 60 mg / L, 70 mg / L, 80 mg / L, 90 mg / L, or 100 mg / L, but is not limited to the values ​​listed above. Other unlisted values ​​within the above range are also applicable.

[0047] Thirdly, the present invention also provides a copper interconnect electroplating method for filling open-hole structures, the electroplating method comprising the following steps:

[0048] The cathode substrate with an open interconnect structure and the metallized cathode and anode are immersed in the electroplating solution composition described above, and then plating is applied between the cathode substrate and the anode.

[0049] Preferably, the cathode substrate includes any one of a silicon-based wafer, an organic substrate, or a glass substrate.

[0050] Preferably, the aspect ratio of the aperture interconnection structure of the cathode substrate is (0.1-4):1, such as 0.1:1, 0.5:1, 1:1, 1.5:1, 2:1, 2.5:1, 3:1, 3.5:1 or 4:1, but not limited to the values ​​listed above. Other unlisted values ​​within the above range are also applicable.

[0051] Compared with the prior art, the present invention has the following beneficial effects:

[0052] (1) The present invention provides a copper plating leveling agent and an electroplating solution containing the leveling agent. The copper plating leveling agent contains a copolymerization product of at least one amide derivative and two organic nitrogen-containing compounds. Through the synergy and regulation of multiple functional groups, it can improve its diffusion and migration ability, balance adsorption and desorption activity, avoid the generation of blind hole filling morphology defects and subsequent reliability risks. At the same time, the copolymer molecular system can adjust the surface coverage and adsorption stability, and regulate the effective working concentration window of the additives, thereby comprehensively improving the filling quality and reliability of the electroplating solution in the blind hole interconnection structure.

[0053] (2) The present invention provides an electroplating method using the above-mentioned leveling agent and electroplating solution. The method can meet the electroplating filling of blind hole structures with different aspect ratios of wafers and substrates. It has the advantages of wide application scenarios, simple maintenance and management, and low production cost. It can be applied to the fields of integrated circuit manufacturing, integrated circuit packaging, circuit board manufacturing and photovoltaic manufacturing involving copper interconnect electroplating filling of blind hole structures. Attached Figure Description

[0054] Figure 1It is a metallographic section of a blind hole with a diameter of 125×100μm (hole depth) electroplated in Experiment 1;

[0055] Figure 2 The metallographic section of a 100×75μm (hole diameter × hole depth) blind hole from Experiment 5 is shown.

[0056] Figure 3 The metallographic section of a 100×50μm (hole diameter×hole depth) blind hole was electroplated in Experiment 9.

[0057] Figure 4 The metallographic section of the blind hole section of Experiment 13 with a diameter of 125×100μm (hole depth) was plated. Detailed Implementation

[0058] The technical solution of the present invention will be further illustrated below through specific embodiments. Those skilled in the art should understand that the embodiments described are merely illustrative of the present invention and should not be construed as limiting the invention in any way.

[0059] Example 1

[0060] This embodiment provides a copper plating leveling agent for blind hole filling, and the specific preparation method is as follows:

[0061] 4.4 g of 4,7,10-trioxo-1,13-tetrazanediamine and 40 mL of dichloromethane were added to a three-necked flask. Then, a 30 mL solution of dichloromethane containing 4.78 g of 3-chloropropyl isocyanate was added dropwise to the flask at room temperature. The mixture was stirred for 12 hours in a water bath at 25°C. The reaction was stopped, and the dichloromethane was removed from the mixture by vacuum distillation to obtain a white solid intermediate 1 (8.72 g, 95%). 4.59 g of intermediate 1, 0.78 g of 4,4'-bipyridine, and 0.86 g of N,N,N',N'-tetramethyl-1,6-hexanediamine were added to the three-necked flask, followed by 10 mL of ethylene glycol. The mixture was heated to 135°C and stirred for 24 hours. The reaction was stopped, and the ethylene glycol was removed from the mixture by vacuum distillation to obtain 6.3 g of a brownish-yellow viscous product 1.

[0062] Example 2

[0063] This embodiment provides a copper plating leveling agent for blind hole filling, and the specific preparation method is as follows:

[0064] 4.59 g of intermediate 1, 0.4 g of pyrazine, and 0.86 g of N,N,N',N'-tetramethyl-1,6-hexanediamine were added to a three-necked flask, followed by the addition of 10 mL of ethylene glycol. The mixture was then heated to 135 °C and stirred for 24 hours. The reaction was stopped, and the ethylene glycol in the mixture was removed by vacuum distillation to obtain 5.9 g of a brownish-yellow viscous product 2.

[0065] Example 3

[0066] This embodiment provides a copper plating leveling agent for blind hole filling, and the specific preparation method is as follows:

[0067] 4.6 g of polyetheramine (commercial product D230) and 40 mL of dichloromethane were added to a three-necked flask. Then, a solution of 4.79 g of chloroacetyl isocyanate in 30 mL of dichloromethane was added dropwise to the flask at room temperature. The mixture was stirred for 12 hours in a water bath at 35°C. The reaction was stopped, and the dichloromethane was removed from the mixture by vacuum distillation to obtain a white solid intermediate 2 (7.13 g, 76% yield). 2.33 g of intermediate 2, 0.39 g of 4,4'-bipyridine, and 0.43 g of N,N,N',N'-tetramethyl-1,6-hexanediamine were added to the three-necked flask, followed by 10 mL of ethylene glycol. The mixture was heated to 135°C and stirred for 24 hours. The reaction was stopped, and the ethylene glycol was removed from the mixture by vacuum distillation to obtain 3.2 g of a brownish-yellow viscous product 3.

[0068] Example 4

[0069] This embodiment provides a copper plating leveling agent for blind hole filling, and the specific preparation method is as follows:

[0070] 2.33 g of intermediate 2, 0.2 g of pyrazine, and 0.43 g of N,N,N',N'-tetramethyl-1,6-hexanediamine were added to a three-necked flask, followed by the addition of 10 mL of ethylene glycol. The mixture was then heated to 135 °C and stirred for 24 hours. The reaction was stopped, and the ethylene glycol in the mixture was removed by vacuum distillation to obtain 3.0 g of a brownish-yellow viscous product 4.

[0071] Example 5

[0072] This embodiment provides a copper plating leveling agent for blind hole filling, and the specific preparation method is as follows:

[0073] 4.4 g of 4,7,10-trioxo-1,13-tetanediamine, 1 g of triethylamine, and 40 mL of dichloromethane were added to a three-necked flask. Then, a 30 mL solution of dichloromethane containing 5.4 g of 3-chloropropyl isothiocyanate was added dropwise to the flask at room temperature. The mixture was stirred for 12 hours in a water bath at 25°C. The reaction was stopped, and the solvent was removed by vacuum distillation to obtain a white solid intermediate 3 (6.17 g, 63%). 2.45 g of intermediate 3, 0.39 g of 4,4'-bipyridine, and 0.43 g of N,N,N',N'-tetramethyl-1,6-hexanediamine were added to the three-necked flask, followed by the addition of 10 mL of ethylene glycol. The mixture was heated to 135°C and stirred for 24 hours. The reaction was stopped, and the ethylene glycol was removed from the mixture by vacuum distillation to obtain 3.4 g of a brownish-yellow viscous product 5.

[0074] Example 6

[0075] This embodiment provides a copper plating leveling agent for blind hole filling, and the specific preparation method is as follows:

[0076] 2.45 g of intermediate 3, 0.2 g of pyrazine, and 0.43 g of N,N,N',N'-tetramethyl-1,6-hexanediamine were added to a three-necked flask, followed by the addition of 10 mL of ethylene glycol. The mixture was then heated to 135 °C and stirred for 24 hours. The reaction was stopped, and the ethylene glycol in the mixture was removed by vacuum distillation to obtain 3.2 g of a brownish-yellow viscous product 6.

[0077] Example 7

[0078] This embodiment provides a copper plating leveling agent for blind hole filling. The specific preparation method is the same as in Example 1, except that N,N,N',N'-tetramethyl-1,6-hexanediamine is replaced with an equimolar amount of N,N,N',N'-tetramethyl-1,4-butanediamine, and 5.9g of brownish-yellow viscous product 7 is obtained.

[0079] Example 8

[0080] This embodiment provides a copper plating leveling agent for blind hole filling. The specific preparation method is the same as in Example 1, except that 4,4'-bipyridine is replaced with an equimolar amount of 4,4-trimethylenedipyridine, and 6.1g of brownish-yellow viscous product 8 is obtained.

[0081] Example 9

[0082] This embodiment provides a copper plating leveling agent for blind hole filling. The specific preparation method is the same as in Example 1, except that 3-chloropropyl isocyanate is replaced with an equimolar amount of p-chlorophenyl isocyanate, and 6.4g of brownish-yellow viscous product 9 is obtained.

[0083] Example 10

[0084] This embodiment provides a copper plating leveling agent for blind hole filling. The specific preparation method is the same as in Example 1, except that 4,7,10-trioxo-1,13-tetanediamine is replaced with an equimolar amount of propylenediamine, and 6.4g of brownish-yellow viscous product 10 is obtained.

[0085] Effect evaluation:

[0086] Electroplating solution composition 1 was prepared according to the following formula and mixed evenly: 1500 mL of pure water, 220 g / L of copper sulfate pentahydrate, 28 ml / L of 98wt% concentrated sulfuric acid, 0.15 ml / L of 37wt% hydrochloric acid, 2 mg / L of sodium polydisulfide dipropane sulfonate as the accelerator, 400 mg / L of polyethylene glycol (weight average molecular weight 20000) as the inhibitor, and 10 mg / L of the leveling agent as the reaction products of Examples 1-10 and Janus Green B (JGB, Comparative Example 1).

[0087] Electroplating experiments were conducted in a Harlem tank using the above-mentioned electroplating solution composition 1 according to the following method: The cathode was a high-density interconnect board sample, cut to size 100×50 mm (length×width), which underwent electroless copper plating and flash copper plating to form three aspect ratio opening structures of 125×100, 100×75, and 100×50 μm (pore diameter×pore depth), respectively; the anode was a phosphor bronze plate (phosphorus content 0.05 wt%), cut to size 120×60 mm (length×width); the volume of the electroplating solution composition was 1500 ml, the temperature was 25℃, air stirring was applied at 7.2 L / min, and the applied current density was 1.8 A / dm³. 2 The electroplating time was 43 min. After electroplating, the sample was rinsed with pure water and dried with cold air. Then, cross-sectional metallographic sections of the micro-blind holes were prepared to observe the filling defects, the thickness of the surface copper (excluding the approximately 6-8 μm of bottom copper), and the center depression value. The results are as follows (the results of Example 1 are as follows). Figure 1-3 As shown, the results of Comparative Example 1 are as follows: Figure 4 (as shown)

[0088]

[0089] From the above table and Figure 1-3 As can be seen, the leveling agent products 1-4 prepared in Examples 1-4 of the present invention can achieve defect-free filling when used for electroplating micro blind holes with an aspect ratio of 0.5-0.8 in high-density interconnect boards. The surface copper thickness is about 15.1-15.9 μm and the center depression value is -6.6~-0 μm, which meets the requirements of electroplating technology for circuit board manufacturing.

[0090] From the above table and Figure 4 As can be seen, when Comparative Example 1 uses JGB leveling agent to electroplate and fill the micro-blind holes of the high-density interconnect board, the surface copper thickness is about 15.5 μm and the center depression is -20.0 μm, which does not meet the filling efficiency requirements of circuit board manufacturing and has a significant difference from Examples 1-4.

[0091] Furthermore, the data above shows that by using specific raw materials, the present invention can effectively control the range of indentation values ​​and improve product performance.

[0092] The applicant declares that this invention illustrates the electroplating copper leveling agent for blind hole filling and its application through the above embodiments, but this invention is not limited to the above embodiments, that is, it does not mean that this invention must rely on the above embodiments to be implemented. Those skilled in the art should understand that any improvements to this invention, equivalent substitutions of the raw materials of this invention, additions of auxiliary components, and selection of specific methods, etc., all fall within the protection scope and disclosure scope of this invention.

[0093] The preferred embodiments of the present invention have been described in detail above. However, the present invention is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.

[0094] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

Claims

1. An electroplating copper leveler for blind via fill, characterized by, The electroplating copper leveler is obtained by copolymerization of an amide compound, an aliphatic tertiary amine compound and an aromatic nitrogen heterocyclic compound; The structure of the amide compound is shown in formula I: Formula I; In the formula, x is selected from oxygen or sulfur, each R1 is independently selected from any one of imino, methylene, amido, carbonyl, ureido, hydrazido or benzenesulfonamido, R2 is selected from substituted or unsubstituted C1-C12 alkylene or substituted or unsubstituted C1-C12 alkylenoxy, and R3 is selected from an aliphatic halogenated hydrocarbon group shown in formula II or an aromatic halogenated hydrocarbon group shown in formula III; In the formula, x1 and x2 are independently selected from any one of fluorine, chlorine, bromine or iodine, y is selected from carbonyl or methylene, n is an integer of 1-5, and R4 is selected from hydrogen, C1-C6 alkyl or C1-C6 alkoxy.

2. The electroplating copper leveler of claim 1, wherein, The structure of the aliphatic tertiary amine compound is shown in formula IV: Formula IV; In the formula, R5 is selected from any one of substituted or unsubstituted C1-C20 alkylene or substituted or unsubstituted C1-C20 alkylenoxy, and R6, R7, R8 and R9 are independently selected from any one of substituted or unsubstituted C1-C6 alkyl or substituted or unsubstituted C1-C6 alkoxy; Preferably, the substituted substituent includes methyl or ethyl; Preferably, R6, R7, R8 and R9 are selected from methyl or ethyl.

3. The electroplating copper leveler of claim 1 or 2, wherein, The structure of the aromatic nitrogen heterocyclic compound is shown in formula V or formula VI: wherein represents any one of an aromatic heterocycle, an aromatic heterocycle fused ring or an aromatic heterocycle linked ring of a nitrogen atom having at least one unbound hydrogen atom, R 10 is selected from substituted or unsubstituted C1-C6 alkylene, represents any one of an aromatic heterocycle, an aromatic heterocycle fused ring or an aromatic heterocycle linked ring of a nitrogen atom having at least two unbound hydrogen atoms.

4. The electroplating copper leveler of claim 1, wherein, The aliphatic tertiary amine compound includes any one of N,N,N',N'-tetramethyl-1,4-butanediamine, N,N,N',N'-tetramethyl-1,6-hexanediamine, N,N,N',N'-tetramethyl-1,3-diaminobutane or bisdimethylaminoethylether, and is preferably N,N,N',N'-tetramethyl-1,6-hexanediamine; Preferably, the aromatic nitrogen heterocyclic compound includes any one of 4,4'-bipyridine, 4,4-trimethylenedipyridine, 1,2-bis(4-pyridyl)ethane, 1,3-bis(2-pyridyl)propane, pyrazine, N-methylimidazole ring, 1-ethylimidazole, 1-isopropylimidazole, 1-propylimidazole, 1,5-naphthylidine, quinoxaline or phenoxazine, and is preferably 4,4'-bipyridine or pyrazine.

5. The electroplating copper leveler of any one of claims 1-4, wherein, The amide compound is obtained by reaction of an isocyanate halide or isothiocyanate halide with a double primary amine compound; Preferably, the isocyanate halide includes an aliphatic isocyanate halide or an aromatic isocyanate halide; The isothiocyanate halide includes an aliphatic isothiocyanate halide or an aromatic isothiocyanate halide.

6. The electroplating copper leveler of claim 5, wherein, The structure of the aliphatic isocyanate halide or aliphatic isothiocyanate halide is shown in formula VII: Formula VII; In the formula, x3 is selected from fluorine, chlorine, bromine or iodine, y1 is selected from carbonyl or methylene, z is selected from oxygen or sulfur, and n is an integer of 1-5; Preferably, the structure of the aromatic isocyanate halide or aromatic isothiocyanate halide is shown in formula VIII: Formula VIII; wherein x4is selected from fluorine, chlorine, bromine or iodine, z1is selected from oxygen or sulfur, R 11 selected from hydrogen, C1-C6alkyl or C1-C6alkoxy; Preferably, the isocyanate halide comprises any one of chloroacetyl isocyanate, p-chlorophenyl isocyanate, m-chlorophenyl isocyanate, o-chlorophenyl isocyanate, 2-chloroethyl isocyanate, 3-chloropropyl isocyanate, 6-chlorohexyl isocyanate, p-bromophenyl isocyanate, m-bromophenyl isocyanate or o-bromophenyl isocyanate, preferably chloroacetyl isocyanate or 3-chloropropyl isocyanate. Preferably, the isothiocyanate halide comprises any one of 2-chloroethyl isothiocyanate, 2-bromoethyl isothiocyanate, 3-bromopropyl isothiocyanate, 3-chloropropyl isothiocyanate, p-chlorophenyl isothiocyanate, m-chlorophenyl isothiocyanate or o-chlorophenyl isothiocyanate, preferably 3-chloropropyl isothiocyanate.

7. The electroplating copper leveler of claim 5 or 6, wherein, The structure of the bis-primary amine compound is shown in formula IX: Formula IX; wherein R 12 is selected from substituted or unsubstituted C1-C20 alkylene or substituted or unsubstituted C1-C20 alkyleneoxy, each R 13 is independently selected from any one of imino, methylene, amido, carbonyl, ureido, hydrazo, or phenylsulfonamido, preferably methylene; Preferably, the bis-primary amine compound comprises any one of propylenediamine, butylenediamine, pentanediamine, hexanediamine, 2,2'-(ethylenedioxy)bis(ethylamine), 1,11-diamino-3,6,9-trioxaundecane, 4,7,10-trioxa-1,13-tridecanediamine, polyetheramine, p-xylylenediamine, adipic acid diamide, 6-aminohexanamide, suberamide, heptanediamide, adipic acid dihydrazide, 1,3-benzenedisulfonamide or 1,4-benzenedisulfonamide, preferably 4,7,10-trioxa-1,13-tridecanediamine or polyetheramine.

8. The electroplating copper leveler of any one of claims 1-7, wherein, The weight average molecular weight of the copper electroplating leveler is 500-10000 g / mol.

9. An electroplating solution composition, characterized by, The electroplating solution composition comprises water, a copper salt, hydrochloric acid, sulfuric acid, an inhibitor, an accelerator and the copper electroplating leveler of any one of claims 1-8; Preferably, the concentration of the copper electroplating leveler is 0.5-100 mg / L.

10. A method for electroplating a copper interconnect to fill an open structure, characterized by, The electroplating method comprises the following steps: immersing a cathode substrate with an open-hole interconnection structure and completed metallization and an anode into the electroplating solution composition of claim 9, and then plating between the cathode substrate and the anode; Preferably, the cathode substrate comprises any one of a silicon-based wafer, an organic substrate or a glass substrate. Preferably, in the open-hole interconnection structure of the cathode substrate, the aspect ratio is (0.1-4):1.

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