Energetic device structure and preparation method thereof

Abstract

The invention provides an energetic device structure and a preparation method thereof. The structure comprises a base, a thermal excitation energetic layer, a heating electrode and an energetic material layer, the thermal excitation energetic layer is arranged on the base; the heating electrode is arranged on the thermal excitation energetic layer; the energetic material layers are respectively arranged on the thermal excitation energetic layer and the heating electrode; wherein the thermal excitation energetic layer comprises a plurality of irregular micro-nano pores and a strong oxidant crystal substance filled in the micro-nano pores. The thermal excitation energetic layer is in direct close contact with the heating electrode on a micro-level, after electrothermal excitation, heat is quickly and effectively added to micro-nano pores actually in direct contact with the heating electrode, and silicon in the micro-nano pores quickly reacts with a strong oxidant crystal substance and is quickly detonated so as to detonate the energetic material layer above; according to the structure of the energetic device, the problem that the time from electrothermal excitation to detonation response is too long is solved, the energetic device has remarkable advantages in the aspect of detonation response, meanwhile, deterioration caused by the fact that energetic materials cannot be rapidly detonated and thermally decomposed is reduced, and released energy is large.

Description

Technical Field

[0001] This invention belongs to the field of energetic device technology, specifically relating to an energetic device structure and its fabrication method. Background Technology

[0002] like Figure 1 The diagram shows a schematic of an existing energetic device, consisting of a silicon substrate 1, a heating electrode 2, and a gel-like energetic material 3. The invention of the gel-like energetic material allows it to be directly coated and cured onto the surface of the heating electrode 2, representing a significant breakthrough compared to other existing technologies. However, thorough research has revealed that the temperature transfer from the heating electrode 2 to the core porous silicon and oxidant crystals of the gel-like energetic material 3 is still relatively slow. This means that after electrothermal excitation, heat cannot be quickly and effectively applied to the energetic material, resulting in an excessively long detonation response time. Furthermore, because the energetic material cannot detonate quickly, it undergoes thermal decomposition during the temperature rise process, leading to partial deterioration and a reduction in the overall energy release of the device.

[0003] To address the aforementioned problems, it is necessary to propose a rationally designed energetic device structure and its fabrication method that effectively solves these problems. Summary of the Invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art, and to provide an energetic device structure and its preparation method.

[0005] One aspect of the present invention provides an energetic device structure, including a base, a thermally excited energetic layer, a heating electrode, and an energetic material layer; The thermally activated energetic layer is disposed on the base; The heating electrode is disposed on the thermally excited energy-containing layer; The energetic material layers are respectively disposed on the thermally activated energetic layer and the heating electrode; wherein... The thermally activated energetic layer comprises multiple irregular micro- and nano-pores and strong oxidant crystals filling the micro- and nano-pores.

[0006] Optionally, a plurality of the micro / nano pores are disposed on the surface of the base; wherein, The pore size of the micro-nano pores ranges from 0.1 μm to 5 μm, and the pore depth ranges from 50 μm to 150 μm.

[0007] Optionally, the heating electrode comprises a single-layer or multi-layer metal structure of at least one of chromium, nickel, titanium, gold, or platinum.

[0008] Optionally, the energetic material layer is a gel-like energetic material layer.

[0009] Optionally, the strong oxidizing agent crystals are sodium perchlorate crystals.

[0010] Another aspect of the present invention provides a method for fabricating an energetic device structure, the method comprising: A base is provided, on the surface of which multiple irregular micro- and nano-pores are formed; Heating electrodes are formed on the surface of the multiple micro / nano pores using a patterning process; Strong oxidant crystals are filled into the micro-nano pores to form a thermally activated energy layer; An energetic material layer is formed by coating the surfaces of the thermally excited energetic layer and the heating electrode with a gel-like energetic material.

[0011] Optionally, the formation of multiple irregular micro / nano pores on the surface of the base includes: The base is cleaned and dried; The dried substrate is placed in an electrolytic cell, and a mixed solution of hydrofluoric acid and anhydrous ethanol is added to the electrolytic cell to chemically etch the surface of the substrate to form a plurality of micro-nano pores on the surface of the substrate.

[0012] Optionally, forming heating electrodes on the surface of the plurality of micro / nano pores through a patterning process includes: A photoresist layer is formed on the surface of the multiple micro-nano pores; The photoresist layer is sequentially exposed and developed to form multiple openings on the photoresist layer; A metal film is deposited within the plurality of openings to form the heating electrode.

[0013] Optionally, filling the micro / nano pores with strong oxidant crystals to form a thermally activated energetic layer includes: The intermediate structure containing the multiple micro-nano pores and the heating electrode is cleaned and dried. The intermediate structure is evacuated to remove air bubbles from the micro-nano pores; The intermediate structure was placed in a saturated sodium perchlorate ethanol solution and ultrasonically immersed and filled. The intermediate structure after soaking and filling is placed in an oven for low-temperature drying to remove the ethanol solvent, so that sodium perchlorate can recrystallize in the micro-nano pores to form strong oxidant crystals, thereby forming the thermally activated energetic layer.

[0014] Optionally, the step of coating the surface of the thermally excited energetic layer and the heating electrode with a gel-like energetic material to form an energetic material layer includes: A gel-like energetic material is coated onto the surfaces of the thermally activated energetic layer and the heating electrode using a screen printing coating process, and then dried and cured to form the energetic material layer.

[0015] The present invention discloses an energetic device structure and its fabrication method. In this energetic device structure, a thermally excited energetic layer is disposed on the surface of a substrate, and a heating electrode is disposed on the thermally excited energetic layer. The thermally excited energetic layer comprises multiple irregular micro / nano pores and strong oxidant crystals filling these pores. The thermally excited energetic layer and the heating electrode are in direct and close contact at the microscopic level. After electrothermal excitation, heat is rapidly and effectively applied to the irregular micro / nano pores in direct contact with the heating electrode. The silicon in the micro / nano pores reacts rapidly with the strong oxidant crystals, quickly initiating an explosion, which in turn detonates the energetic material layer above. This energetic device structure improves upon the problem of excessively long response time from electrothermal excitation to detonation, exhibiting significant advantages in detonation response (reaching the millisecond level). Simultaneously, it reduces the deterioration of the energetic material caused by its inability to rapidly detonate and thermally decompose, ensuring the release of energy. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of an energetic device in the prior art; Figure 2 This is a schematic diagram of an energetic device structure according to an embodiment of the present invention; Figure 3 This is a schematic flowchart of a method for fabricating an energetic device structure according to another embodiment of the present invention; Figures 4 to 7 This is a schematic diagram of the process flow for a method of fabricating an energetic device structure according to another embodiment of the present invention. Detailed Implementation

[0017] To enable those skilled in the art to better understand the technical solution of the present invention, the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0018] When existing chips or devices are integrated with energetic devices, the energetic devices can perform functions such as destruction and power supply in specific scenarios. Research both domestically and internationally faces several technical challenges, particularly the excessively long response time from electrothermal excitation to detonation of energetic devices. Existing technologies primarily focus on the thermal sensitivity of energetic materials and the design and layout of heating electrodes. Extensive research and analysis have revealed that the long temperature conduction path from the heating electrode to the energetic material due to the existing device structure prevents heat from being quickly and effectively transferred to the energetic material after electrothermal excitation, resulting in an excessively long detonation response time.

[0019] To address the aforementioned problems, this invention innovatively proposes an energetic device structure and its fabrication method, thereby solving the problem of excessively long response time from electrothermal excitation to detonation of energetic self-destruct devices, thus meeting application requirements.

[0020] like Figure 2As shown, one aspect of the present invention provides an energetic device structure, including a base 10, a heating electrode 20, an energetic material layer 30, and a thermally activated energetic layer 40. The thermally activated energetic layer 40 is disposed on the base 10. The heating electrode 20 is disposed on the thermally activated energetic layer 40. The energetic material layer 30 is respectively disposed on the surfaces of the thermally activated energetic layer 40 and the heating electrode 20. Wherein, as... Figure 4 As shown, the thermally excited energetic layer 40 includes multiple irregular micro-nano pores 41 and strong oxidant crystals filling the micro-nano pores 41. That is, the strong oxidant crystals fill the micro-nano pores 41 at the micro-nano scale and are tightly bonded to form the thermally excited energetic layer 40.

[0021] Specifically, since the heating electrode 20 is disposed on the thermally excited energetic layer 40, after electrothermal excitation, heat is rapidly and effectively applied to the irregular micro- and nano-pores 41 on the thermally excited energetic layer 40, which are actually in direct contact with the heating electrode 20. The silicon in the micro- and nano-pores 41 reacts rapidly with the strong oxidant crystals in the micro- and nano-pores 41, causing a rapid explosion, which in turn detonates the energetic material layer 30 above. By setting the thermally excited energetic layer 40, this energetic device structure has the advantages of rapid response and large energy release.

[0022] The energetic device structure of this invention comprises a thermally excited energetic layer disposed on the surface of a base, and a heating electrode disposed on the thermally excited energetic layer. The thermally excited energetic layer includes multiple irregular micro / nano pores and strong oxidant crystals filling these pores. The thermally excited energetic layer and the heating electrode are in direct and close contact at the microscopic level. After electrothermal excitation, heat is rapidly and effectively applied to the irregular micro / nano pores in direct contact with the heating electrode. The silicon in the micro / nano pores reacts rapidly with the strong oxidant crystals, quickly initiating an explosion that detonates the energetic material layer above. This energetic device structure improves upon the problem of excessively long response time from electrothermal excitation to detonation, exhibiting significant advantages in detonation response (reaching the millisecond level). Simultaneously, it reduces the deterioration of the energetic material caused by its inability to rapidly detonate and thermally decompose, ensuring the release of energy.

[0023] For example, such as Figure 4 As shown, multiple micro- and nano-pores 41 are disposed on the surface of the base 10. The pore size of the micro- and nano-pores 41 ranges from 0.1 μm to 5 μm, and the pore depth ranges from 50 μm to 150 μm. The micro- and nano-pores 41 belong to a micro- and nano-scale pore structure.

[0024] It should be noted that this embodiment does not specifically limit the size of the micro-nano pores 41, and can be selected according to actual needs. Furthermore, the shape of the micro-nano pores 41 is also not specifically limited, and can be selected according to actual needs.

[0025] For example, in this embodiment, the heating electrode 20 may include a single-layer metal structure or a multi-layer metal structure of at least one of chromium, nickel, titanium, gold or platinum.

[0026] Specifically, in this embodiment, the thickness of the heating electrode 20 ranges from 1 μm to 5 μm, and the linewidth of the heating electrode 20 is from 0.05 mm to 2 mm. It can be directly processed by magnetron sputtering using a photomask. More specifically, in this embodiment, the heating electrode 20 can use a Cr layer with a thickness of 3.5 μm and a linewidth of 120 μm. It should be noted that this embodiment does not specifically limit the specific material type of the heating electrode 20, and it can be selected according to actual needs.

[0027] For example, in this embodiment, the energetic material layer 30 can be a gel-like energetic material layer. That is, the energetic material layer 30 uses a gel-like energetic material, which is a material formed by filling silicon powder with oxidant crystals after porous preparation and mixing it with shellac.

[0028] It should be noted that in this embodiment, the energetic material layer 30 can also be made of other energetic materials. This embodiment does not impose specific limitations and can be selected according to actual needs.

[0029] For example, in this embodiment, the strong oxidizing agent crystal can be sodium perchlorate crystal. Of course, other types of crystals can also be used as long as they have strong oxidizing properties. This embodiment does not specifically limit the type of strong oxidizing agent crystal, and it can be selected according to actual needs.

[0030] For example, in this embodiment, the base 10 can be a monocrystalline silicon wafer or a polycrystalline silicon wafer (or a thinned version). Specifically, the base 10 can be a currently mainstream 4-inch to 12-inch monocrystalline silicon wafer or polycrystalline silicon wafer with a thickness of 300 μm to 500 μm.

[0031] It should be noted that this embodiment does not specifically limit the material of the base 10, and it can be selected according to actual needs.

[0032] like Figure 3 As shown, another aspect of the present invention provides a method for fabricating an energetic device structure, S100, the method comprising: S110. Provide a base, on which multiple irregular micro-nano pores are formed on the surface of the base.

[0033] like Figure 4 As shown, a base 10 is provided, wherein the silicon base 10 adopts the currently mainstream 4-inch polycrystalline silicon wafer with a thickness of 500 μm.

[0034] The specific process of forming multiple irregular micro / nano pores 41 on the surface of the base 10 in step S110 can be as follows: 1) Clean and dry the base 10.

[0035] Specifically, during the silicon wafer manufacturing process, the surface may become contaminated or contain impurity ions. Common contaminants include organic matter, oil, metal ions, particulate impurities, and Si oxides. The substrate 10 is immersed in anhydrous ethanol (C2H5OH) solution and ultrasonically cleaned for 5 minutes to remove surface organic impurities using the principle of like dissolves like. Then, the substrate 10 is immersed in 5% HF solution for 10 minutes to dissolve and remove surface oxides and metal ions. Finally, it is rinsed with deionized water and dried at room temperature. The cleaned substrates can be stored in methanol.

[0036] 2) Place the dried base 10 in an electrolytic cell, add a mixed solution of hydrofluoric acid and anhydrous ethanol to the electrolytic cell, and chemically etch the surface of the base 10 to form a plurality of micro-nano pores 41 on the surface of the base 10.

[0037] Specifically, the cleaned base 10 is placed into an electrolytic cell. A 3:1 mixture of HF and anhydrous ethanol (C2H5OH) is injected into the electrolytic cell. HF etches the Si wafer, while C2H5OH acts as a surface activator, accelerating the removal of H2 from the Si wafer. This ensures sufficient contact between the Si wafer and the HF acid, speeding up the corrosion reaction and improving the uniformity of the sample corrosion. The Pt sheet electrode connected to the cathode of the electrochemical workstation is then placed in the electrolyte, thus forming an electrolytic circuit. The corrosion current density is determined by controlling the current of the electrochemical workstation, and the corrosion reaction time can also be controlled as needed. Ultimately, corrosion forms on the surface of the base 10. Figure 4 The plurality of micro-nano pores 41 shown.

[0038] It should be noted that the pore size of the formed micro-nano pores 41 ranges from 0.1 μm to 5 μm, and the pore depth ranges from 50 μm to 150 μm. The micro-nano pores 41 belong to the micro-nano scale pore structure.

[0039] It should be noted that this embodiment does not specifically limit the size of the micro-nano pores 41, and can be selected according to actual needs. Furthermore, the shape of the micro-nano pores 41 is also not specifically limited, and can be selected according to actual needs.

[0040] 3) Cleaning, drying and storage.

[0041] After the corrosion reaction was completed, the sample was washed with methanol several times to remove the electrolyte on and inside the Si wafer. It was then dried in a drying oven at 60°C for 2 hours and wrapped in weighing paper for storage.

[0042] S120. A heating electrode is formed on the surface of the multiple micro-nano pores by a patterning process.

[0043] The specific steps for forming the heating electrode 20 can be as follows: 1) A photoresist layer is formed on the surface of the plurality of micro-nano pores 41. Among them, the irregular micro-nano pores 41 are small and do not significantly affect the fabrication process of the heating electrode.

[0044] 2) Expose and develop the photoresist layer sequentially to form multiple openings on the photoresist layer.

[0045] 3) Deposit a metal film within the plurality of openings to form the heating electrode 20.

[0046] Specifically, in this embodiment, the metal film can be a Cr layer with a thickness of 3.5 μm and a linewidth of 120 μm. It is formed by magnetron sputtering. Figure 5 The heating electrode 20 shown.

[0047] It should be noted that different patterns on the heating electrode 20 can improve local heating performance, which is understandable to those skilled in the art. However, the key innovation of this invention lies in the direct contact between the heating electrode 20 and the thermally excited energetic layer 40 at the microscopic level through the coating, which is the advantage of this invention.

[0048] S130. Fill the micro-nano pores with strong oxidant crystals to form a thermally activated energetic layer.

[0049] In step S130, the specific steps for forming the thermally excited energetic layer 40 can be as follows: 1) The intermediate structure having multiple micro-nano pores and the heating electrode is cleaned and dried.

[0050] Specifically, the intermediate structure with multiple micro-nano pores 41 and heating electrode 20 is cleaned, and then the intermediate structure is placed in a drying oven at 60 °C to dry, ensuring that the surface is clean.

[0051] 2) Vacuum the intermediate structure to remove air bubbles from the micro-nano pores.

[0052] Specifically, the polytetrafluoroethylene beaker and intermediate structure are placed in a vacuum chamber and a vacuum is drawn to remove air bubbles from the micro-nano pores 41.

[0053] 3) The intermediate structure was placed in a saturated sodium perchlorate ethanol solution for ultrasonic soaking and filling.

[0054] Specifically, the intermediate structure is placed horizontally in a PTFE beaker. A saturated sodium perchlorate-ethanol solution is added to the PTFE beaker, ensuring that the solution completely immerses the sample. The PTFE beaker is then placed in the working tank of an ultrasonic cleaner, ensuring that the ultrasonic waves are evenly applied to the solution and the intermediate structure. The ultrasonic cleaner is then started, with the ultrasonic frequency set to 40 Hz, the power to 80 W, and the ultrasonic treatment time to 30 minutes.

[0055] 4) The intermediate structure after soaking and filling is placed in an oven for low-temperature drying to remove the ethanol solvent, so that sodium perchlorate can recrystallize in the micro-nano pores to form strong oxidant crystals, thereby forming the thermally activated energetic layer.

[0056] Specifically, after ultrasonic treatment, the intermediate structure is removed from the solution and dried in an oven at a low temperature (60°C) to remove the ethanol solvent, ensuring that sodium perchlorate recrystallizes within the micro-nano pores to form strong oxidant crystals, thereby forming... Figure 6 The thermally excited energetic layer 40 is shown.

[0057] It should be noted that other types of crystals can also be used for strong oxidizing agents, as long as they possess strong oxidizing properties. This embodiment does not specifically limit the type of strong oxidizing agent crystals; they can be selected according to actual needs.

[0058] S140. A gel-like energetic material is coated on the surface of the thermally excited energetic layer and the heating electrode to form an energetic material layer.

[0059] Specifically, a gel-like energetic material is coated onto the surfaces of the thermally activated energetic layer 40 and the heating electrode 20 using a screen printing coating process, and then dried and cured to form... Figure 7 The energetic material layer 30 shown forms a complete energetic device structure.

[0060] The present invention discloses a method for fabricating an energetic device structure, comprising: patterning a substrate to form multiple irregular micro / nano pores on the surface of the substrate; forming a heating electrode on the surface of the multiple micro / nano pores through a patterning process; filling the micro / nano pores with strong oxidant crystals to form a thermally excited energetic layer; and coating the surfaces of the thermally excited energetic layer and the heating electrode with a gel-like energetic material to form an energetic material layer. The formed thermally excited energetic layer and the heating electrode are in direct and close contact at the microscopic level. After electrothermal excitation, heat is rapidly and effectively applied to the irregular micro / nano pores in direct contact with the heating electrode. The silicon in the micro / nano pores reacts rapidly with the strong oxidant crystals, quickly detonating and thus igniting the energetic material layer above. This energetic device structure improves the problem of excessively long response time from electrothermal excitation to detonation, exhibiting significant advantages in detonation response (reaching the millisecond level), while reducing the deterioration of the energetic material caused by its inability to rapidly detonate and thermally decompose, ensuring its energy release.

[0061] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A structure for an energetic device, characterized in that, It includes a base, a thermally activated energetic layer, a heating electrode, and an energetic material layer; The thermally activated energetic layer is disposed on the base; The heating electrode is disposed on the thermally excited energy-containing layer; The energetic material layers are respectively disposed on the thermally activated energetic layer and the heating electrode; wherein... The thermally activated energetic layer comprises multiple irregular micro- and nano-pores and strong oxidant crystals filling the micro- and nano-pores.

2. The energetic device structure according to claim 1, characterized in that, Multiple micro / nano pores are disposed on the surface of the base; wherein, The pore size of the micro-nano pores ranges from 0.1 μm to 5 μm, and the pore depth ranges from 50 μm to 150 μm.

3. The energetic device structure according to claim 1, characterized in that, The heating electrode comprises a single-layer or multi-layer metal structure of at least one of chromium, nickel, titanium, gold, or platinum.

4. The energetic device structure according to any one of claims 1 to 3, characterized in that, The energetic material layer is a gel-like energetic material layer.

5. The energetic device structure according to any one of claims 1 to 3, characterized in that, The strong oxidizing agent crystals are sodium perchlorate crystals.

6. A method for fabricating an energetic device structure, characterized in that, The method includes: A base is provided, on the surface of which multiple irregular micro- and nano-pores are formed; Heating electrodes are formed on the surface of the multiple micro / nano pores using a patterning process; Strong oxidant crystals are filled into the micro-nano pores to form a thermally activated energy layer; An energetic material layer is formed by coating the surfaces of the thermally excited energetic layer and the heating electrode with a gel-like energetic material.

7. The method according to claim 6, characterized in that, The formation of multiple irregular micro / nano pores on the surface of the base includes: The base is cleaned and dried; The dried substrate is placed in an electrolytic cell, and a mixed solution of hydrofluoric acid and anhydrous ethanol is added to the electrolytic cell to chemically etch the surface of the substrate to form a plurality of micro-nano pores on the surface of the substrate.

8. The method according to claim 6, characterized in that, The process of forming heating electrodes on the surface of the plurality of micro / nano pores through a patterning process includes: A photoresist layer is formed on the surface of the multiple micro-nano pores; The photoresist layer is sequentially exposed and developed to form multiple openings on the photoresist layer; A metal film is deposited within the plurality of openings to form the heating electrode.

9. The method according to claim 6, characterized in that, The process of filling the micro / nano pores with strong oxidant crystals to form a thermally activated energetic layer includes: The intermediate structure containing the multiple micro-nano pores and the heating electrode is cleaned and dried. The intermediate structure is evacuated to remove air bubbles from the micro-nano pores; The intermediate structure was placed in a saturated sodium perchlorate ethanol solution and ultrasonically immersed and filled. The intermediate structure after soaking and filling is placed in an oven for low-temperature drying to remove the ethanol solvent, so that sodium perchlorate can recrystallize in the micro-nano pores to form strong oxidant crystals, thereby forming the thermally activated energetic layer.

10. The method according to claim 6, characterized in that, The process of coating the surfaces of the thermally excited energetic layer and the heating electrode with a gel-like energetic material to form an energetic material layer includes: A gel-like energetic material is coated onto the surfaces of the thermally activated energetic layer and the heating electrode using a screen printing coating process, and then dried and cured to form the energetic material layer.

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