Suspension liquid for grinding two-component sapphire crystal as well as preparation method and application method of suspension liquid

Abstract

The invention discloses a suspension for grinding a bi-component sapphire crystal as well as a preparation method and an application method of the suspension, and relates to the technical field of sapphire grinding. The suspension comprises a component A and a component B, wherein the weight ratio of the component A to the component B is 100: (1-10); the component A is prepared from the following ingredients in parts by weight: 90 to 97 parts of deionized water, 0.5 to 2 parts of thickening agents, 0.2 to 2 parts of dispersing agents, 0.2 to 2 parts of antirust agents, 0.2 to 2 parts of preservatives and 0.2 to 2 parts of grinding accelerators; and the component B is one or more of hydroxypropyl starch ether, carbomer 940, carbomer 941, carbomer U20, konjaku flour and konjac glucomannan. The sapphire crystal rough grinding device has the advantages of being capable of efficiently improving the grinding speed and prolonging the service life, reducing consumables and the use cost of machines and manpower, suitable for sapphire crystal machining and the like, and is suitable for rough grinding of sapphire crystal machining.

Description

Technical Field

[0001] This invention relates to the field of sapphire grinding technology, and in particular to a two-component sapphire crystal grinding suspension and its preparation and application methods. Background Technology

[0002] Sapphire single crystals possess advantages such as extremely high hardness and structural strength, wear resistance, and low material density. They can operate at ultra-high temperatures approaching 2000°C, exhibiting excellent thermal, electrical, and dielectric properties, and are resistant to chemical corrosion. They are also heat-resistant, have good thermal conductivity, high hardness, infrared transmittance, and good chemical stability. Therefore, they are widely used in high-temperature and high-pressure devices, special windows, optical systems, wear-resistant components, infrared guidance, missile fairings, and other high-tech fields including military, civilian, intelligent equipment, and scientific research. Among these applications, sapphire is most widely used as a substrate material for LEDs. LEDs, as a new generation of light sources with high efficiency, long lifespan, and simple driving circuits, have applications in numerous fields such as landscaping, decoration, and lighting.

[0003] In the sapphire substrate processing, boron carbide polishing slurries using boron carbide micro powder as abrasives require a large amount of suspension, have long processing time, low removal rate, short service life, and high mechanical wear. This increases both the cost of the consumable boron carbide polishing slurry and the operating costs of the machines and labor.

[0004] Chinese patent application (patent application number 201110097782.1) discloses a "rough grinding slurry for sapphire substrates and its preparation method." The "rough grinding slurry" is composed of boron carbide, water, and a suspension, with a weight ratio of boron carbide, water, and suspension of 2:4:1. The suspension is composed of a dispersant, a suspending agent, and a rust inhibitor, with a weight ratio of dispersant, suspending agent, and rust inhibitor of 2:5:1. The dispersant is a high-molecular-weight organic alcohol, the suspending agent is a high-molecular-weight compound, and the rust inhibitor is an alkali. This invention, by employing the above technical solution, results in a low-cost, highly stable grinding slurry that significantly improves processing efficiency and greatly enhances wafer flatness.

[0005] However, judging from the weight ratio of boron carbide, water and suspension, the amount of suspension used accounts for 25% of the water, indicating that the amount of suspension used is relatively high.

[0006] Another Chinese patent application (patent application number 201910862716.5) discloses a "coarse polishing slurry for sapphire polishing," which comprises the following components by weight: 32-55 parts abrasive, 1-3 parts dispersant, 1-3 parts thickener, 1-2 parts surfactant, 3-5 parts alkalinity regulator, and 55-90 parts deionized water; wherein the abrasive is one of silicon carbide, boron carbide, silicon dioxide, and aluminum oxide, with a Mohs hardness >9 and a particle size of 60-100 nm. This coarse polishing slurry can be used for coarse polishing in the chemical mechanical polishing (CMP) process of sapphire, achieving good polishing results and effectively improving the yield of sapphire polishing processes.

[0007] Another invention patent application (patent application number 201910862695.7) discloses "A polishing slurry for sapphire grinding and polishing process and its preparation method." The polishing slurry is composed of the following raw materials in parts by weight: 35-63 parts composite abrasive, 1-3 parts dispersant, 1-3 parts thickener, 1-2 parts alkalinity regulator, and 62-85 parts deionized water; wherein the composite abrasive is a mixture of two of silicon nitride, silicon carbide, boron nitride, and boron carbide. The polishing slurry of this invention has the advantages of low cost and simple preparation process.

[0008] Another invention patent application (patent application number 201910890490.X) discloses a "Preparation Method of Sapphire Wafer Fine Grinding Fluid," the preparation steps of which are as follows: First, accelerators A and B are mixed in a measuring cup in a certain proportion and stirred thoroughly to prepare the required accelerator. Then, the above accelerator and pure water are added to a mixing tank in a certain proportion and stirred for 2-3 minutes. Next, boron carbide abrasive is added to the above mixing tank in a certain proportion. Then, a vertical mixer is used to stir it for 1.5 hours. The stirred grinding fluid is poured into a slurry tank. Then, the slurry tank containing the grinding fluid is placed on an electronic scale with upper and lower limit alarm functions. Finally, a vertical mixer is used to stir the slurry in the slurry tank throughout the process. The fine grinding fluid prepared by this invention avoids the use of suspending agents, improves the efficiency of waste liquid recycling (coarse grinding), and the recycled waste liquid does not require the addition of additional dispersants. Summary of the Invention

[0009] The technical problem to be solved by the present invention is to provide a suspension that uses boron carbide micro powder as a grinding material, can efficiently improve the grinding rate and service life, and reduce the cost of consumables, machines and labor, and is suitable for sapphire crystal processing. At the same time, the present invention also provides a method for preparing and applying the suspension.

[0010] To solve the above-mentioned technical problems, the technical solution adopted by the present invention is to invent a two-component sapphire crystal grinding suspension: the suspension includes component A and component B, and the weight ratio of component A to component B is 100:1 to 10;

[0011] Component A, by weight, comprises the following: 90-97% deionized water, 0.5-2% thickener, 0.2-2% dispersant, 0.2-2% rust inhibitor, 0.2-2% corrosion inhibitor, and 0.2-2% grinding accelerator;

[0012] Component B is one or more of hydroxypropyl starch ether, carbomer 940, carbomer 941, carbomer U20, konjac powder, and konjac gum. When there are two or more, the weight ratio of each component is equal parts by weight or other proportions.

[0013] The thickener is one or more of guar gum, gellan gum, sodium alginate, sodium polyacrylate, gelatin, and sodium carboxymethyl cellulose. When there are two or more of them, the weight ratio of each component is equal parts by weight or other proportions.

[0014] The dispersant is one or more of triethanolamine, polyethylene glycol 400, polypropylene glycol 400, polyethylene glycol 600, polypropylene glycol 600, terpineol, and sodium hexametaphosphate. When there are two or more of them, the weight ratio of each component is equal parts by weight or other proportions.

[0015] The rust inhibitor is one or more of sorbitan monooleate, 1-hydroxybenzotriazole, and sodium nitrite. When there are two or more of them, the weight ratio of each component is equal parts by weight or other proportions.

[0016] The preservative is one or more of potassium sorbate, sodium benzoate, sodium D-isoascorbate, and glyceryl monocaprylate. When there are two or more, the weight ratio of each component is equal parts by weight or other proportions.

[0017] The grinding accelerator is one or more of 4-acryloylmorpholine, N,N-dimethylformamide, and N,N-dimethylethanolamine. When there are two or more, the weight ratio of each component is equal parts by weight or other proportions.

[0018] In addition, a method for preparing a suspension for grinding two-component sapphire crystals is also provided, the preparation steps of which are as follows:

[0019] Preparation of materials: Take each raw material according to the above weight percentages and set aside;

[0020] Mixing of Component A: Add the prepared deionized water, thickener, dispersant, rust inhibitor, corrosion inhibitor, and grinding accelerator to a closed dispersion tank and disperse at a speed of 750-1500 rpm for 10-20 minutes to obtain the mixture of Component A for later use.

[0021] Grinding of Component B: First, grind the prepared Component B raw materials until they are uniform and fine to obtain Component B fine powder, and set aside.

[0022] Mixing: Add the prepared A component mixture and B component fine powder to a dispersion tank according to the above weight ratio, and disperse at a speed of 800-1000 rpm for 10-20 minutes to obtain a two-component sapphire crystal grinding suspension.

[0023] Meanwhile, a method for applying a suspension for grinding two-component sapphire crystals is also provided, the application steps of which are as follows:

[0024] Preparation of grinding slurry: Add boron carbide micro powder, deionized water and two-component sapphire crystal grinding suspension in a mass ratio of 2:4:0.4-0.6 into a dispersion tank and disperse at a speed of 500-1000 rpm for 5-15 minutes to obtain two-component sapphire crystal grinding slurry for later use.

[0025] Grinding: A two-component sapphire crystal polishing slurry is used in a polishing machine to polish the sapphire A-axis wafer at a unit polishing pressure of 200–400 g / cm². 2 The grinding time is 30 minutes, and the grinding fluid flow rate is 400-600 ml / min.

[0026] Furthermore, the application method of the two-component sapphire crystal grinding suspension includes the following steps:

[0027] Preparation of grinding slurry: Add boron carbide micro powder F240, deionized water and two-component sapphire crystal grinding suspension in a mass ratio of 2:4:0.5 into a dispersion tank and disperse at 800 rpm for 10 minutes to obtain two-component sapphire crystal grinding slurry for later use.

[0028] Grinding: A two-component sapphire crystal polishing slurry is used in a polishing machine to polish the sapphire A-axis wafer at a unit polishing pressure of 300 g / cm². 2 The grinding time was 30 minutes and the grinding fluid flow rate was 500 ml / min.

[0029] Furthermore, the application method of the two-component sapphire crystal grinding suspension includes the following steps:

[0030] Preparation of grinding slurry: Add boron carbide micro powder F240, deionized water and two-component sapphire crystal grinding suspension in a mass ratio of 2:4:0.4 into a dispersion tank and disperse at 800 rpm for 10 minutes to obtain two-component sapphire crystal grinding slurry for later use.

[0031] Grinding: A two-component sapphire crystal polishing slurry is used in a polishing machine to polish the sapphire A-axis wafer at a unit polishing pressure of 300 g / cm². 2 The grinding time was 30 minutes and the grinding fluid flow rate was 500 ml / min.

[0032] Furthermore, the application method of the two-component sapphire crystal grinding suspension includes the following steps:

[0033] Preparation of grinding slurry: Add boron carbide micro powder F240, deionized water and two-component sapphire crystal grinding suspension in a mass ratio of 2:4:0.6 into a dispersion tank and disperse at 800 rpm for 10 minutes to obtain two-component sapphire crystal grinding slurry for later use.

[0034] Grinding: A two-component sapphire crystal polishing slurry is used in a polishing machine to polish the sapphire A-axis wafer at a unit polishing pressure of 300 g / cm². 2 The grinding time was 30 minutes and the grinding fluid flow rate was 500 ml / min.

[0035] The two-component sapphire crystal grinding suspension of the present invention has the following advantages compared with existing similar suspensions:

[0036] First, this invention uses dispersants and grinding accelerators in combination to complement each other's strengths and compensate for each other's weaknesses, which can effectively improve the grinding rate, thereby reducing mechanical wear and lowering machine and labor costs;

[0037] Secondly, the present invention uses a thickener in combination with a solid powder suspending agent (i.e., component B raw material), which can effectively improve the suspension performance and service life of the suspension.

[0038] Third, the present invention adopts a two-component approach, which can significantly reduce the amount of suspension used and reduce the cost of use (i.e., the cost of consumables). Detailed Implementation

[0039] The present invention will be further described below with reference to embodiments. The following description is by way of example, but the scope of protection of the present invention should not be limited thereto.

[0040] Example 1:

[0041] The preparation and application process of the two-component sapphire crystal grinding suspension in this embodiment is as follows:

[0042] Preparation of suspension for grinding two-component sapphire crystals:

[0043] Component A preparation: According to the weight parts, take 95 parts of deionized water, 1 part of gellan gum, 1 part of polypropylene glycol 400, 1 part of 1-hydroxybenzotriazole, 1 part of sodium benzoate, and 1 part of N,N-dimethylformamide, and set aside.

[0044] Component B preparation: Take 1 part of carbomer 941 and 1 part of konjac gum by weight, and set aside.

[0045] Component A mixing: Add the prepared deionized water, gellan gum, polypropylene glycol 400, 1-hydroxybenzotriazole, sodium benzoate, and N,N-dimethylformamide to a closed high-speed dispersion tank and disperse at 1000 rpm for 15 minutes to obtain the component A mixture for later use.

[0046] Grinding of Component B: Grind the prepared Carbomer 941 and konjac gum until they are uniform and fine to obtain fine powder of Component B, and set aside.

[0047] Mixing: Add the prepared A component mixture and B component fine powder to a high-speed dispersion tank at a weight ratio of 100:2, and disperse at 1000 rpm for 20 minutes to obtain a two-component sapphire crystal grinding suspension for later use.

[0048] Preparation of two-component sapphire crystal polishing slurry:

[0049] Boron carbide micro powder F240, deionized water and two-component sapphire crystal grinding suspension were added to a high-speed dispersion tank at a weight ratio of 2:4:0.4 and dispersed at 800 rpm for 10 minutes to obtain two-component sapphire crystal grinding slurry for later use.

[0050] Grinding: A two-component sapphire crystal polishing slurry was used in a polishing machine (Presil200) to polish the sapphire A-axis wafer at a unit polishing pressure of 300 g / cm. 2 The grinding time is 30 minutes, the grinding fluid flow rate is 500 ml / min, and then the wafer is cleaned to obtain the ground sapphire A-axis wafer.

[0051] The thickness difference of the polished sapphire A-axis wafer is measured using a thickness gauge to determine the removal rate; at the same time, the wafer is measured using a flatness tester.

[0052] Sixteen wafers are processed at a time. After grinding, the wafers are measured using a flatness tester. Wafers with a TTV < 0.8 or TTV > 1.2 are considered unqualified. The average yield percentage is calculated as follows: for example, 93.75%, the formula is: [1 - (1 ÷ 16)] × 100% = 93.75%, which means that one of the 16 wafers is unqualified. The same applies below.

[0053] The performance test results are detailed in Table 1 below.

[0054] Example 2:

[0055] The preparation and application process of the two-component sapphire crystal grinding suspension in this embodiment is as follows:

[0056] Preparation of suspension for grinding two-component sapphire crystals:

[0057] Component A preparation: According to the weight parts, take 90 parts of deionized water, 2 parts of gelatin, 2 parts of triethanolamine, 2 parts of sodium nitrite, 2 parts of sodium D-isoascorbate, 1 part of N,N-dimethylformamide, and 1 part of 4-acryloylmorpholine, and set aside.

[0058] Component B preparation: Take 1 part of carbomer 941 and 2 parts of konjac gum by weight, and set aside.

[0059] Component A mixing: Add the prepared deionized water, gelatin, triethanolamine, sodium nitrite, sodium D-isoascorbate, N,N-dimethylformamide, and 4-acryloylmorpholine to a closed high-speed dispersion tank and disperse at 1000 rpm for 15 minutes to obtain the component A mixture for later use.

[0060] Grinding of Component B: Grind the prepared Carbomer 941 and konjac gum until they are uniform and fine to obtain fine powder of Component B, and set aside.

[0061] Mixing: Add the prepared A component mixture and B component fine powder to a high-speed dispersion tank at a weight ratio of 100:3, and disperse at 1000 rpm for 20 minutes to obtain a two-component sapphire crystal grinding suspension for later use.

[0062] Preparation of two-component sapphire crystal polishing slurry:

[0063] Boron carbide micro powder F240, deionized water and two-component sapphire crystal grinding suspension were added to a high-speed dispersion tank at a weight ratio of 2:4:0.6 and dispersed at 800 rpm for 10 minutes to obtain two-component sapphire crystal grinding slurry for later use.

[0064] Grinding: A two-component sapphire crystal polishing slurry was used in a polishing machine (Presil200) to polish the sapphire A-axis wafer at a unit polishing pressure of 300 g / cm. 2 The grinding time is 30 minutes, the grinding fluid flow rate is 500 ml / min, and then the wafer is cleaned to obtain the ground sapphire A-axis wafer.

[0065] The performance test results are detailed in Table 1 below.

[0066] Example 3:

[0067] The preparation and application process of the two-component sapphire crystal grinding suspension in this embodiment is as follows:

[0068] Preparation of suspension for grinding two-component sapphire crystals:

[0069] Component A preparation: According to the weight parts, take 90 parts of deionized water, 2 parts of sodium carboxymethyl cellulose, 2 parts of polyethylene glycol 600, 2 parts of 1-hydroxybenzotriazole, 1 part of sodium benzoate, 1 part of sodium D-isoascorbate, and 2 parts of N,N-dimethylformamide, and set aside.

[0070] Component B preparation: Take 1 part of carbomer 940 and 2 parts of konjac powder by weight, and set aside.

[0071] Component A mixing: Add the prepared deionized water, sodium carboxymethyl cellulose, polyethylene glycol 600, 1-hydroxybenzotriazole, sodium benzoate, sodium D-isoascorbate, and N,N-dimethylformamide to a closed high-speed dispersion tank and disperse at 1000 rpm for 15 minutes to obtain the component A mixture for later use.

[0072] Grinding of Component B: Grind the prepared Carbomer 940 and konjac powder until they are uniform and fine to obtain fine powder of Component B, and set aside.

[0073] Mixing: Mix the prepared A component mixture and B component fine powder at a weight ratio of 100:3, disperse at 1000 rpm for 20 minutes to obtain a two-component sapphire crystal grinding suspension for later use.

[0074] Preparation of two-component sapphire crystal polishing slurry:

[0075] Boron carbide micro powder F240, deionized water and two-component sapphire crystal grinding suspension were added to a high-speed dispersion tank at a weight ratio of 2:4:0.5 and dispersed at 800 rpm for 10 minutes to obtain two-component sapphire crystal grinding slurry for later use.

[0076] Grinding: A two-component sapphire crystal polishing slurry was used in a polishing machine (Presil200) to polish the sapphire A-axis wafer at a unit polishing pressure of 300 g / cm. 2 The grinding time is 30 minutes, the grinding fluid flow rate is 500 ml / min, and then the wafer is cleaned to obtain the ground sapphire A-axis wafer.

[0077] The performance test results are detailed in Table 1 below.

[0078] Comparative Example 1:

[0079] Preparation of sapphire crystal polishing slurry:

[0080] First, select a commercially available sapphire crystal grinding suspension from a certain brand for later use;

[0081] Then, add boron carbide micro powder F240, deionized water and a certain brand of sapphire crystal grinding suspension in a weight ratio of 2:4:0.5 into a high-speed dispersion tank and disperse at 800 rpm for 10 minutes to obtain a certain brand of sapphire crystal grinding slurry for later use.

[0082] Grinding: The spare sapphire crystal polishing slurry of a certain brand was used in a polishing machine (Presil200) to grind the sapphire A-axis wafer at a unit polishing pressure of 300g / cm. 2 The grinding time is 30 minutes, the grinding fluid flow rate is 500 ml / min, and then the wafer is cleaned to obtain the ground sapphire A-axis wafer.

[0083] The performance test results are detailed in Table 1 below.

[0084] Comparative Example 2:

[0085] Preparation of sapphire crystal polishing slurry:

[0086] First, select a commercially available sapphire crystal grinding suspension from a certain brand for later use;

[0087] Then, add boron carbide micro powder F240, deionized water and a certain brand of sapphire crystal grinding suspension in a weight ratio of 2:4:1 into a high-speed dispersion tank and disperse at 800 rpm for 10 minutes to obtain a certain brand of sapphire crystal grinding slurry for later use.

[0088] Grinding: The spare sapphire crystal polishing slurry of a certain brand was used in a polishing machine (Presil200) to grind the sapphire A-axis wafer at a unit polishing pressure of 300g / cm. 2 The grinding time is 30 minutes, the grinding fluid flow rate is 500 ml / min, and then the wafer is cleaned to obtain the ground sapphire A-axis wafer.

[0089] The performance test results are detailed in Table 1 below.

[0090] Table 1 below lists the performance test results for the four embodiments described above:

[0091] Table 1 Summary of Performance Test Results

[0092] Average yield Average removal rate Surface flatness Example 1 87.5% 4.1 μm / min TTV=1.11 Example 2 93.75% 4.4 μm / min TTV=1.15 Example 3 87.5% 4.5μm / min TTV=1.15 Comparative Example 1 75% 2.4μm / min TTV=0.82 Comparative Example 2 81.25% 3.8μm / min TTV=0.88

[0093] Based on the dosage ratios of the above embodiments and comparative examples, as well as the data in Table 1, regarding the dosage of the two-component sapphire crystal grinding suspension of the present invention and a commercially available brand of sapphire crystal grinding suspension, when the dosages of the two are equal (i.e., Comparative Example 1), the average yield of the latter is much lower than that of the former, and its average removal rate is even lower than that of the former; while when the dosage of the latter is doubled (i.e., Comparative Example 2), the average yield of the latter is still lower than that of the former, and its average yield and average removal rate are still much lower than those of the former.

[0094] As can be seen, the two-component sapphire crystal grinding suspension of the present invention has a significantly reduced dosage and a significantly improved average removal rate compared with a commercially available sapphire crystal grinding suspension of a certain brand.

[0095] The two-component sapphire crystal grinding suspension of the present invention is suitable for coarse grinding in sapphire crystal processing.

Claims

1. A two-component sapphire crystal grinding suspension, characterized in that: The suspension comprises component A and component B, wherein the weight ratio of component A to component B is 100:1 to 10. Component A, by weight, comprises the following: 90-97% deionized water, 0.5-2% thickener, 0.2-2% dispersant, 0.2-2% rust inhibitor, 0.2-2% corrosion inhibitor, and 0.2-2% grinding accelerator; Component B is one or more of hydroxypropyl starch ether, carbomer 940, carbomer 941, carbomer U20, konjac powder, and konjac gum. When there are two or more, the weight ratio of each component is equal parts by weight or other proportions.

2. The suspension for grinding two-component sapphire crystals according to claim 1, characterized in that: The thickener is one or more of guar gum, gellan gum, sodium alginate, sodium polyacrylate, gelatin, and sodium carboxymethyl cellulose. When there are two or more of them, the weight ratio of each component is equal parts by weight or other proportions.

3. The suspension for grinding two-component sapphire crystals according to claim 1, characterized in that: The dispersant is one or more of triethanolamine, polyethylene glycol 400, polypropylene glycol 400, polyethylene glycol 600, polypropylene glycol 600, terpineol, and sodium hexametaphosphate. When there are two or more of them, the weight ratio of each component is equal parts by weight or other proportions.

4. The suspension for grinding two-component sapphire crystals according to claim 1, characterized in that: The rust inhibitor is one or more of sorbitan monooleate, 1-hydroxybenzotriazole, and sodium nitrite. When there are two or more of them, the weight ratio of each component is equal parts by weight or other proportions.

5. The suspension for grinding two-component sapphire crystals according to claim 1, characterized in that: The preservative is one or more of potassium sorbate, sodium benzoate, sodium D-isoascorbate, and glyceryl monocaprylate. When there are two or more, the weight ratio of each component is equal parts by weight or other proportions.

6. The suspension for grinding two-component sapphire crystals according to claim 1, characterized in that: The grinding accelerator is one or more of 4-acryloylmorpholine, N,N-dimethylformamide, and N,N-dimethylethanolamine. When there are two or more, the weight ratio of each component is equal parts by weight or other proportions.

7. A method for preparing a two-component sapphire crystal grinding suspension as described in any one of claims 1-6, characterized in that, The preparation steps are as follows: Preparation of materials: Take each raw material according to the above weight ratio and set aside; Mixing of Component A: Add the prepared deionized water, thickener, dispersant, rust inhibitor, corrosion inhibitor, and grinding accelerator to a closed dispersion tank and disperse at a speed of 750-1500 rpm for 10-20 minutes to obtain the mixture of Component A for later use. Grinding of Component B: First, grind the prepared Component B raw materials until they are uniform and fine to obtain Component B fine powder, and set aside. Mixing: Add the prepared A component mixture and B component fine powder to a dispersion tank according to the above weight ratio, and disperse at a speed of 800-1000 rpm for 10-20 minutes to obtain a two-component sapphire crystal grinding suspension.

8. A method for applying the two-component sapphire crystal grinding suspension as described in claim 7, characterized in that, The application steps are as follows: Preparation of grinding slurry: Add boron carbide micro powder, deionized water and two-component sapphire crystal grinding suspension in a mass ratio of 2:4:0.4-0.6 into a dispersion tank and disperse at a speed of 500-1000 rpm for 5-15 minutes to obtain two-component sapphire crystal grinding slurry for later use. Grinding: A two-component sapphire crystal polishing slurry is used in a polishing machine to polish the sapphire A-axis wafer at a unit polishing pressure of 200–400 g / cm². 2 The grinding time is 30 minutes, and the grinding fluid flow rate is 400-600 ml / min.

9. The method of applying the two-component sapphire crystal grinding suspension according to claim 8, characterized in that, The application steps are as follows: Preparation of grinding slurry: Add boron carbide micro powder F240, deionized water and two-component sapphire crystal grinding suspension in a mass ratio of 2:4:0.5 into a dispersion tank and disperse at 800 rpm for 10 minutes to obtain two-component sapphire crystal grinding slurry for later use. Grinding: A two-component sapphire crystal polishing slurry is used in a polishing machine to polish the sapphire A-axis wafer at a unit polishing pressure of 300 g / cm². 2 The grinding time was 30 minutes and the grinding fluid flow rate was 500 ml / min.

10. The method of applying the two-component sapphire crystal grinding suspension according to claim 8, characterized in that, The application steps are as follows: Preparation of grinding slurry: Add boron carbide micro powder F240, deionized water and two-component sapphire crystal grinding suspension in a mass ratio of 2:4:0.4 into a dispersion tank and disperse at 800 rpm for 10 minutes to obtain two-component sapphire crystal grinding slurry for later use. Grinding: A two-component sapphire crystal polishing slurry is used in a polishing machine to polish the sapphire A-axis wafer at a unit polishing pressure of 300 g / cm². 2 The grinding time was 30 minutes and the grinding fluid flow rate was 500 ml / min.