Coating equipment and coating method based on coating equipment

Abstract

The invention discloses coating equipment and a coating method based on the coating equipment. The equipment comprises a vacuum chamber, a composite vacuum system, a magnetron sputtering system, a workpiece rotating system, an inflating system and a coating equipment control system, the composite vacuum system is communicated with the vacuum chamber through a plurality of groups of vacuum pipelines and vacuum valves; the inflation system is connected with the vacuum chamber through a gas supply pipeline of various gases; the coating equipment control system is configured to control the whole coating process; the workpiece rotating system is positioned in the vacuum chamber and is configured to carry a target piece to perform concentric or planetary rotation; the magnetron sputtering system comprises a mounting bracket and a magnetron sputtering target; the mounting bracket is positioned in the vacuum chamber; the magnetron sputtering target is arranged below the mounting bracket; the magnetron sputtering target is mounted on the bracket through a three-degree-of-freedom driving mechanism and is driven by a vacuum motor to realize three-degree-of-freedom movement; and the magnetron sputtering targets are distributed around the center of the vacuum chamber. According to the equipment, film plating of more materials is carried out on a target piece, and good film plating deposition uniformity is obtained.

Description

Technical Field

[0001] This application relates to the field of vacuum coating technology, and more specifically, to a coating equipment and a coating method based on the coating equipment. Background Technology

[0002] Optical coatings are used to enhance the transmission, reflection, or polarization properties of optical components. For example, approximately 10% of incident light will be reflected from the surface of each uncoated glass device. Antireflective coatings can reduce the reflectivity of each surface to below 3%, while high-reflectivity dielectric films can increase the reflectivity to over 97%. Coatings are typically composed of coating materials such as oxides, metals, or rare-earth materials. The performance of a coating depends on the number of layers, its thickness, and the refractive index differences between the layers.

[0003] Vacuum coating technology, as a technique for creating deposited films on specific surfaces, has wide applications in real-world production and daily life. Currently, there are three main methods of vacuum coating: evaporation coating, magnetron sputtering coating, and ion plating. However, for some applications requiring high coating uniformity and complex film material composition, these current coating methods cannot yet meet these requirements. Summary of the Invention

[0004] The purpose of this application is to provide a coating equipment and a coating method based on the coating equipment. By setting a magnetron sputtering target around the center of the vacuum chamber (a point on the rotation axis of the mounting bracket) on the mounting bracket of the vacuum chamber, and by rotating the optical element around the center of the vacuum chamber in various ways, and by monitoring and controlling the amount of gas used in the coating process, the uniformity of the coating can be improved, thereby enabling the coating of more materials on the target part.

[0005] In a first aspect, this application provides a coating apparatus, including a vacuum chamber, a composite vacuum system, a magnetron sputtering system, a workpiece rotation system, a gas filling system, and a coating apparatus control system; the composite vacuum system is connected to the vacuum chamber via vacuum pipelines and vacuum valves, and obtains a vacuum environment of a relevant magnitude for the coating requirements within the vacuum chamber; the gas filling system is connected to the vacuum chamber via a gas supply pipeline and is configured to supply a target gas to the vacuum chamber; wherein, the target gas includes relevant gases used in the sputtering coating process; the coating apparatus control system is configured to monitor and control the coating process of the target workpiece; the workpiece rotation system is located within the vacuum chamber and is configured to carry the target workpiece and perform concentric or planetary rotation within the vacuum chamber for coating the target workpiece; the magnetron sputtering system includes a mounting bracket and a magnetron sputtering target; the mounting bracket is located within the vacuum chamber and is disposed at the top of the vacuum chamber; the magnetron sputtering target is disposed below the mounting bracket; The magnetron sputtering target is mounted on a bracket via a three-degree-of-freedom drive mechanism. The three-degree-of-freedom drive mechanism is configured within a specified range to drive the magnetron sputtering target to move radially along the center of the vacuum chamber, move the magnetron sputtering distance to the target workpiece, and adjust the angle. The mounting bracket is concentric with the center of the vacuum chamber. The magnetron sputtering target is distributed around the center of the vacuum chamber.

[0006] The aforementioned coating equipment, by setting a magnetron sputtering target around the center of the plate (a point on the rotation axis of the mounting bracket) on a mounting bracket in the vacuum chamber, and by monitoring and controlling the amount of gas used during the coating process, enables the deposition of films of more materials on the target part and improves the uniformity of the coating. Furthermore, the magnetron sputtering target is connected to the mounting bracket via a three-degree-of-freedom drive mechanism, enabling the adjustment of the magnetron sputtering target on the mounting bracket. This allows for adjustment of the magnetron sputtering target's attitude relative to the target element according to different target element sizes and different motion modes, thereby improving the uniformity of the coating. In other words, the thickness, uniformity, material composition, and coating efficiency of the film can be effectively adjusted, further improving the uniformity and quality of the coating.

[0007] In conjunction with the first aspect, optionally, the magnetron sputtering target includes a twin magnetron sputtering target and a single magnetron sputtering target.

[0008] The aforementioned coating equipment utilizes a magnetron sputtering target that simultaneously comprises twin magnetron sputtering targets and a single magnetron sputtering target. Since magnetron sputtering targets are suitable for depositing thin films of a single material, the twin magnetron sputtering target can deposit alloy or compound thin films by adjusting the combination of two reactive gases. Therefore, the combination of these two components satisfies the coating requirements of a wider range of material systems and various film structures, further increasing the functionality of depositing combinations of film layers.

[0009] In conjunction with the first aspect, optionally, the magnetron sputtering system further includes an anode layer ion source; the anode layer ion source is disposed on the side of the magnetron sputtering target on the mounting bracket and configured to generate cations for ion cleaning of the target.

[0010] The aforementioned coating equipment, by setting an ion source on the mounting bracket for ion cleaning of the target surface, removes impurities from the target surface, ultimately improving the uniformity of the coating. Furthermore, by removing impurities from the target surface, the adhesion between the film layer and the target surface is improved, better preventing film peeling. This avoids problems such as irregular particle arrangement and voids caused by localized film base detachment, further enhancing the uniformity of the coating.

[0011] In conjunction with the first aspect, optionally, the magnetron sputtering target has a first length direction; the first length direction is consistent with the radial direction of the mounting bracket; wherein, the radial direction is a direction passing through the center of the plate and located in the plane of the mounting bracket.

[0012] The aforementioned coating equipment, by radially distributing the magnetron sputtering target along the mounting bracket, increases the coverage of the target by the magnetron sputtering target while the target is being rotated for coating. This is especially beneficial when coating large optical components, as it allows the ions emitted by the magnetron sputtering target to reach all positions on the target more fully, thereby further improving the uniformity of the coating.

[0013] In conjunction with the first aspect, optionally, the gas supply pipeline includes a working gas pipeline and a reaction gas pipeline, and the target gas includes a working gas and a reaction gas; the working gas pipeline includes at least two working gas branches, each with a first valve; one end of each working gas branch is connected to the gas filling system, and the other end is located in the vacuum chamber and connected to the magnetron sputtering target and the anode layer ion source, respectively, to supply the working gas to the magnetron sputtering target and the anode layer ion source; the reaction gas pipeline includes at least two reaction gas branches, each with a second valve; one end of each reaction gas branch is connected to the gas filling system, and the other end is connected to the side gas distribution pipeline of the magnetron sputtering target and the anode layer ion source in the vacuum chamber, respectively, to supply the working gas to the magnetron sputtering target and the anode layer ion source.

[0014] The aforementioned coating equipment, by configuring two branches for the target gas delivery pipeline to each magnetron sputtering target, and installing a first valve or a second valve on each branch, achieves five-stage adjustable control of the target gas quantity during the coating process. This allows for more precise control over the quantity and uniformity of the target gas, ultimately improving the uniformity of the coating.

[0015] In conjunction with the first aspect, optionally, the vacuum chamber includes an upper vacuum chamber, a lower vacuum chamber, a lifting system, a movable trolley, and a support rail; the upper vacuum chamber includes an upper flange opening formed by an upper wall and the edge of the upper wall surrounding the vacuum chamber, and the lower vacuum chamber includes a lower flange opening formed by a lower wall and the edge of the lower wall surrounding the vacuum chamber; the upper flange opening and the lower flange opening are detachably connected; the lifting system is located at a first target position and includes a supporting hydraulic cylinder and four lifting mechanism support frames located on the side of the upper vacuum chamber; the four lifting mechanism support frames carry the upper vacuum chamber; the support rail is located at a second target position and carries the movable trolley; the movable trolley supports the lower vacuum chamber via the four lifting mechanism support columns.

[0016] The aforementioned coating equipment, through the cooperation of a lifting frame and a movable support, enables the upper vacuum chamber to be raised and lowered, and the lower vacuum chamber to be moved horizontally. This facilitates the insertion and removal of the target component from the vacuum chamber, thereby improving the placement and removal of the target component and shortening the working cycle of the coating process. Furthermore, because the target component can be quickly placed and removed, the time the inside of the vacuum chamber is exposed to air is reduced, minimizing the entry of water vapor and other impurities from the air, thus improving the quality of the coated film.

[0017] In conjunction with the first aspect, optionally, the coating equipment control system includes a vacuum sensor, an optical sensor, a voltage sensor, a controller, a gas flow regulator, and a cooling pipeline; the vacuum sensor is disposed in the vacuum chamber and is used to collect vacuum level signals; the vacuum sensor is electrically connected to the controller via an EtherCAT bus; the optical sensor is disposed in the vacuum chamber and is electrically connected to the controller; a water flow regulator is disposed on the cooling pipeline and is electrically connected to the controller; the vacuum sensor is configured to monitor the vacuum level of the vacuum chamber and send vacuum level parameter signals to the controller; the optical sensor is configured to monitor the optical parameters of the target gas and send optical parameter signals to the controller. The voltage sensor is disposed in the vacuum chamber and electrically connected to the controller; the voltage sensor is configured to monitor the voltage parameters of the target gas and / or the magnetron sputtering target, and send voltage parameter signals to the controller; the flow regulator is disposed on the gas supply line and electrically connected to the controller to receive and respond to flow regulation control signals sent by the controller; the water flow regulator is configured to monitor the temperature and flow rate of the coolant and send them to the controller; and receive the control signals from the controller to control the flow rate of the coolant; the controller is configured to receive the optical parameter signals and the voltage parameter signals, and send the flow regulation control signals to the flow regulator based on the optical parameter signals and the voltage parameter signals.

[0018] The aforementioned coating equipment monitors the vacuum and voltage parameters during the coating process using vacuum sensors, optical sensors, and voltage sensors, respectively, and sends the monitored parameters to the controller. The controller then controls the flow regulator based on these parameters, thereby controlling the supply and uniformity of the target gas and further improving the uniformity of the coating.

[0019] Secondly, this application provides a coating method based on a coating equipment, the coating equipment including a vacuum chamber system, a composite vacuum system, a magnetron sputtering system, a workpiece rotation system, a gas filling system, and a coating equipment control system; the vacuum chamber system includes a vacuum chamber; the method is applied to the coating equipment control system and includes: when the vacuum chamber reaches the vacuum level required for coating, controlling the gas filling system to deliver a target gas to the vacuum chamber; when the target gas in the vacuum chamber reaches a preset concentration value, starting the magnetron sputtering system; and monitoring the coating process of the target workpiece, and controlling the target gas quantity, the power of the magnetron sputtering target, and the thin film deposition rate based on the monitoring results.

[0020] The coating method based on the coating equipment described above has the same beneficial effects as the coating equipment described in the first aspect, and will not be repeated here.

[0021] In conjunction with the second aspect, optionally, the coating equipment control system includes a vacuum sensor, an optical sensor, a voltage sensor, a controller, a flow regulator, and a water flow regulator; the method is specifically applied to the controller, wherein monitoring the coating process of the target part and controlling the target gas quantity, the power of the magnetron sputtering target, and the film deposition rate based on the monitoring results includes: acquiring the vacuum parameter signal monitored by the vacuum sensor; acquiring the optical parameter signal monitored by the optical sensor and the voltage parameter signal monitored by the voltage sensor; acquiring the temperature and flow rate signals of the coolant monitored by the water flow regulator; and sending a flow regulation control signal to the flow regulator based on the vacuum parameter signal, the optical parameter signal, the voltage parameter signal, and the temperature and flow rate signals of the coolant.

[0022] The above-mentioned coating method based on coating equipment monitors the optical and voltage parameters during the coating process using vacuum sensors, optical sensors, and voltage sensors, respectively, and sends the monitored parameters to the controller. The controller controls the flow regulator based on these parameters, thereby controlling the supply and uniformity of the target gas and further improving the uniformity of the coating. Attached Figure Description

[0023] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0024] Figure 1 A perspective view of the coating apparatus provided in the embodiments of this application; Figure 2 A cross-sectional view of the vacuum chamber in the coating apparatus provided in an embodiment of this application; Figure 3 A perspective view of the magnetron sputtering system in the coating equipment provided in the embodiments of this application; Figure 4 This is a top view of the magnetron sputtering system in the coating equipment provided in the embodiments of this application; Figure 5 This is a schematic diagram showing the relative positions of the magnetron sputtering target and the reflector provided in an embodiment of this application. Figure 6 A contour map of film deposition thickness distribution at a distance of 150 mm from the magnetron sputtering target provided for an embodiment of this application; Figure 7 The film thickness distribution obtained by simulation calculation under five working conditions is provided for the embodiments of this application; Figure 8 The central region film thickness distribution obtained by simulation calculation under five working conditions is provided in the embodiments of this application; Figure 9 A schematic diagram of planetary motion with a small radius orbit after the reflector is placed eccentrically, as provided in an embodiment of this application. Figure 10 A single-line trajectory diagram of some evenly distributed points in the central region of the mirror surface during eccentric rotation when the D value is 10cm, provided for an embodiment of this application. Figure 11 A distribution diagram of some evenly distributed points in the central region of the mirror during eccentric rotation, provided in an embodiment of this application; Figure 12 A single-line trajectory diagram of some evenly distributed points in the central region of the mirror surface during eccentric rotation when the D value is 5cm, provided for an embodiment of this application. Figure 13 A schematic diagram of the pipeline distribution in the coating equipment provided in the embodiments of this application; Figure 14 This is a functional block diagram of the coating equipment control system provided in the embodiments of this application; Figure 15 A flowchart of a coating method based on a coating equipment provided in an embodiment of this application; Figure 16 This is a flowchart of step S150 in the coating method based on coating equipment provided in the embodiments of this application.

[0025] Icons: 100. Coating equipment; 110. Vacuum chamber; 111. Upper vacuum chamber; 112. Lower vacuum chamber; 113. Supporting hydraulic cylinder; 114. Lifting mechanism support frame; 115. Supporting rail; 116. Movable trolley; 117. Lifting mechanism support column; 120. Inflation system; 130. Coating equipment control system; 131. Optical sensor; 132. Voltage sensor; 133. Controller; 134. Flow regulator; 135. Vacuum sensor; 136. Water flow regulator; 140. Magnetron sputtering system; 141. Mounting bracket; 142. Twin magnetron sputtering target; 143. Single magnetron sputtering target; 144. Anode layer ion source; 145. Three-degree-of-freedom drive mechanism; 150. Gas supply line; 151. Working gas line; 1511. Working gas branch; 1512. First valve; 152. Reaction gas line; 1521. Reaction gas branch; 1522. Second valve; 200. Target component. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0027] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0028] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0029] In the description of this application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, or the orientation or positional relationship commonly used when the product of the invention is in use. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. In addition, the terms "first," "second," and "third," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0030] Furthermore, terms such as "horizontal" and "vertical" do not imply that components must be absolutely horizontal or suspended, but rather that they can be slightly tilted. For example, "horizontal" simply means that its direction is more horizontal than "vertical," and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0031] In the description of this application, it should also be noted that, unless otherwise expressly specified and limited, the terms "set up," "install," "connect," and "link" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0032] For applications requiring high coating uniformity and complex film material composition, current coating methods are insufficient. This is particularly true for large mirrors (e.g., diameters over 3000 mm) requiring coatings with a reflectivity of 98% for specific wavelength ranges (e.g., average reflectivity exceeding 98% in the 450nm-900nm wavelength range and above 98% in the 2μm-12μm wavelength range), and achieving a film uniformity greater than 97%. Therefore, this application provides a coating apparatus and a coating method based on that apparatus to address the aforementioned technical problems. For specific details, please refer to the embodiments and accompanying drawings provided in this application.

[0033] Please refer to Figure 1 and Figure 2 , Figure 1 This is a perspective view of the coating apparatus 100 provided in the embodiments of this application; Figure 2 This is a cross-sectional view of the vacuum chamber 110 in the coating equipment 100 provided in this application embodiment. The coating equipment 100 provided in this application embodiment may include a vacuum chamber 110, a composite vacuum system, a workpiece rotation system, a gas filling system 120, a coating equipment control system 130, and a magnetron sputtering system 140. The composite vacuum system is connected to the vacuum chamber through vacuum pipelines and vacuum valves, and obtains a vacuum environment of a relevant magnitude for the coating requirements within the vacuum chamber. The gas filling system 120 is connected to the vacuum chamber 110 through a gas supply pipeline 150 and can be configured to supply target gas into the vacuum chamber 110. The target gas includes the relevant gases used in the sputtering coating process. The coating equipment control system 130 can be configured to monitor and control the coating process of the target part 200. The workpiece rotation system is located within the vacuum chamber and is configured to carry the target part and perform concentric or planetary rotation within the vacuum chamber 110 for coating the target part. The magnetron sputtering system 140 may include a mounting bracket 141 and a magnetron sputtering target. The mounting bracket 141 may be located inside the vacuum chamber 110 and may be positioned at the top of the vacuum chamber 110. The magnetron sputtering target may be positioned below the mounting bracket 141. The magnetron sputtering target is mounted on the mounting bracket via a three-degree-of-freedom drive mechanism 145, which is configured within a specified range to drive the magnetron sputtering target to move radially along the center of the vacuum chamber, move the magnetron sputtering distance towards the target workpiece, and adjust the angle. The mounting bracket 141 is concentric with the center of the vacuum chamber. The magnetron sputtering targets are distributed around the center of the vacuum chamber 110.

[0034] Vacuum chamber 110 adopts a bell-shaped structure with an inner diameter of 6000mm. The main material of vacuum chamber 110 can be selected from 304 stainless steel, 316L stainless steel, aluminum alloy, or low-carbon steel. 304 stainless steel contains chromium (Cr) and nickel (Ni), which alloy elements form a dense oxide protective layer on its surface, giving vacuum chamber 110 good corrosion and oxidation resistance, ease of processing, and high mechanical strength and toughness. 316L stainless steel has a high molybdenum (Mo) content, thus exhibiting good corrosion resistance and low-temperature toughness, making it suitable for the low-temperature environment of vacuum chamber 110 during vacuum acquisition. Aluminum alloy, while meeting the mechanical strength requirements of vacuum chamber 110, also reduces its weight due to its lower density, thereby reducing transportation costs and assembly difficulty. Low-carbon steel has good weldability and mechanical strength, capable of withstanding the high internal and external pressure differences generated by vacuum chamber 110 under high vacuum conditions. Maintenance doors can also be installed around the vacuum chamber 110 to facilitate personnel access for cleaning and maintenance. To facilitate the maintenance and safe use of components on the top of the vacuum chamber 110, a maintenance platform can be installed at the top of the vacuum chamber 110, along with a corresponding maintenance ladder for easy access. Stainless steel cooling channels can be welded to the outer wall of the vacuum chamber 110 to remove heat generated during heating and coating processes.

[0035] A high-vacuum pump unit, such as four cryogenic pumps and three molecular pumps, can be installed at the top of the vacuum chamber 110. The high-vacuum pumps can be connected to the backing pump unit via vacuum pipelines. Vacuum valves can be installed on the vacuum pipelines. The backing pump unit can be located around the vacuum chamber 110 and can specifically include two Roots pumps and two screw dry vacuum pumps. These high-vacuum pump units and the backing pump unit can constitute a vacuum acquisition system, which can be used to evacuate the vacuum chamber 110 according to the vacuum level required for coating.

[0036] The inflation system 120 may specifically include a gas storage device. This gas storage device can be connected to the vacuum chamber 110 via a gas supply line 150. A digital mass flow meter may be installed on the gas supply line 150, and it can receive control signals from the coating equipment control system 130 to adjust the target gas quantity.

[0037] A support device for supporting the target component 200 can also be provided inside the vacuum chamber 110. With the mounting bracket 141 located at the top of the vacuum chamber 110, the support assembly can be located at the bottom of the vacuum chamber 110. The support assembly can support the target component 200 and can drive the target component 200 to rotate concentrically or planetarily according to actual coating requirements. The support device can mainly include a support assembly for supporting the target component 200, a drive assembly, a transmission component, and a first crossed roller bearing. The rotation center of the transmission component can be connected to the output end of the drive assembly. The side of the transmission component facing away from the drive assembly can be connected to the support assembly. The rotating surface of the transmission component facing the drive assembly can be connected to the free end of the first crossed roller bearing. The fixed end of the first crossed roller bearing can be connected to the base.

[0038] For large-sized target components without a central hole, non-concentric rotation is required during coating to eliminate singularities in the central rotation and achieve uniformity in the coating layer. Therefore, depending on actual usage requirements, multiple different carrier components can be configured on the carrier device to drive the target component 200 to perform concentric or planetary rotation under the drive of the drive component. When concentric rotation of the target component 200 is required, the carrier component can be directly connected to the transmission component without the need for a rotary connector. In this case, the rotation of the transmission component can be directly transmitted to the carrier component, thus achieving concentric rotation of the target. When planetary rotation of the target component 200 is required, a first crossed roller bearing and planetary gears can be configured in the carrier component. The planetary gears and the first crossed roller bearing are eccentrically positioned relative to the rotation center of the transmission component, thus achieving planetary rotation of the target. When it is necessary to switch the movement mode of the target component 200, the currently installed carrier component can be removed and replaced with another appropriate carrier component.

[0039] When the vacuum chamber 110 adopts a bell-shaped or similar structure, the mounting bracket 141 can be circular. Correspondingly, the center of the plate of the mounting bracket 141 can be its center. Specifically, the magnetron sputtering target can be a magnetron sputtering target, and these targets can be distributed around the center of the plate; that is, there can be multiple magnetron sputtering targets. Furthermore, the materials of the multiple magnetron sputtering targets can be different. The magnetron sputtering targets can coat the target part 200 based on the principle of magnetron sputtering deposition.

[0040] The coating equipment control system 130 can specifically be a Speedflo gas monitoring system, which mainly includes a controller 133 and sensors, such as a voltage sensor 132, a spectral sensor, and a light intensity sensor. The voltage sensor 132 monitors the voltage of the magnetron sputtering target; the spectral sensor monitors the spectral information of the glow region of the target gas during magnetron sputtering coating; and the light intensity sensor monitors the light intensity information of the glow region of the target gas during magnetron sputtering coating. The controller 133 can control the amount of target gas in the gas filling system 120 based on the information monitored by the sensors and in conjunction with the PDF control algorithm.

[0041] Specifically, the PDF control algorithm can be implemented by manually controlling the concentration of the target gas within the vacuum chamber 110 during the coating process, and utilizing sensors configured in the Speedflo gas monitoring system, such as optical sensors and voltage sensors, to monitor the optical parameters (spectral information of the target gas glow region, light intensity information of the target gas glow region, etc.) and voltage parameters of the target gas. This parameter data is collected and preliminarily cleaned to remove noise and invalid data points. Then, the preliminarily cleaned data is smoothed using KDE to generate a probability density distribution curve of the target gas, and a PDF model is constructed based on this curve. The constructed PDF model is then used to calculate the upper and lower limit thresholds of the target gas concentration in the vacuum chamber 110. After constructing the PDF model and the upper and lower limit thresholds of the target gas concentration in the vacuum chamber, in practical applications, the current concentration of the target gas can be calculated by acquiring the parameter data collected by the sensors in the Speedflo gas monitoring system, and the subsequent trend of gas concentration changes can be predicted. If the gas concentration exceeds the upper or lower limit threshold in the current concentration or in the subsequent gas concentration trend, the Speedflo gas monitoring system can issue an alert and control the gas supply by adjusting the valves on the gas supply line to ensure that the concentration of the target gas is within the normal range. This ensures the uniformity of the coating.

[0042] The three-degree-of-freedom drive mechanism 145 may consist of a translation component and at least two sets of scissor assemblies. The translation component can be constructed using a sliding connection method known to those skilled in the art. Its sliding direction can be aligned with the length direction of the magnetron sputtering target connected to the workpiece rotation system, thereby enabling the magnetron sputtering target to translate towards or away from the center of the plate. The two sets of scissor assemblies can be distributed along the length direction of the magnetron sputtering target connected to the workpiece rotation system. The simultaneous retraction and extension of the two sets of scissor assemblies enables the magnetron sputtering target to translate towards or away from the mounting bracket 141 along a direction perpendicular to the plane of the mounting bracket 141. Adjusting one of the scissor assemblies, or retracting one scissor assembly while extending the other, allows for adjustment of the tilt angle of the magnetron sputtering target relative to the mounting bracket 141.

[0043] In the above implementation process, by setting a magnetron sputtering target around the center of the plate (a point on the rotation axis of the mounting bracket 141) on the mounting bracket 141 of the vacuum chamber 110, and by monitoring and controlling the amount of gas used in the coating process, it is possible to deposit films of more materials on the target part 200 and improve the uniformity of the coating. Furthermore, the magnetron sputtering target is connected to the mounting bracket via a three-degree-of-freedom drive mechanism, enabling the magnetron sputtering target to be adjustable on the mounting bracket. This allows for adjusting the attitude of the magnetron sputtering target relative to the target part according to different target parts of different sizes and different motion modes to improve the uniformity of the coating. In other words, the thickness, uniformity, material composition, and coating efficiency of the film can be effectively adjusted, further improving the uniformity and quality of the coating. Please refer to... Figure 3 and Figure 4 , Figure 3 This is a perspective view of the magnetron sputtering system 140 in the coating equipment 100 provided in the embodiments of this application; Figure 4 This is a top view of the magnetron sputtering system 140 in the coating apparatus 100 provided in this application embodiment. In some optional embodiments, the magnetron sputtering target may include a twin magnetron sputtering target 142 and a single magnetron sputtering target 143.

[0044] Twin magnetron sputtering targets typically have two targets operating simultaneously, allowing for the simultaneous sputtering of two different materials required for coating, especially at medium-frequency sputtering where the target power density is more than three times that of DC sputtering, achieving a product rate of more than ten times the target power density. Furthermore, the dual-target design mitigates the risk of cross-contamination, maintaining the purity and performance of the deposited film. Single magnetron sputtering targets typically consist of only one magnetron sputtering target.

[0045] Twin magnetron sputtering targets 142 are typically used to simultaneously deposit films of two different materials on the same target element, such as: bimetallic or multimetallic layer structures of metal + metal (Ag + NiCr), metal + oxide (Ag + Al2O3) films with a gradual transition from metal to oxide, and composite oxide films of oxide + oxide (Si3N4 + Al2O3), etc. Single magnetron sputtering targets 143 are typically used to deposit high-purity or specific composition films on target elements, such as: metal films of aluminum (Al), silver (Ag), chromium (Cr), etc., alloy films of nickel-chromium alloy (NiCr), etc., or films of aluminum oxide (Al2O3), silicon nitride (Si3N4), and tantalum oxide (Ta2O5), etc.

[0046] In the specific coating process, inert gases such as argon are first introduced into the vacuum chamber 110. The argon gas is ionized into positive ions (Ar ions) in the vacuum chamber 110 and, under the acceleration of the electric field, impacts the target surface, causing target particles or molecules to be sputtered and deposited on the surface of the target element. When depositing nitride or oxide films, nitrogen or oxygen is introduced into the vacuum chamber 110 as reactant gases. Taking oxide films as an example, after the argon gas is introduced into the vacuum chamber 110, ionized, and forms a stable plasma, oxygen can be introduced as a reactant gas. The amount of oxygen introduced can be monitored and controlled using a Speedflo gas monitoring system. After the oxygen is introduced, it typically reacts chemically with the ions sputtered from the target, generating the desired oxide film. The oxide film then begins to deposit on the surface of the target element. Once the film thickness deposited on the target element reaches the expected thickness, the gas supply can be shut off, the pressure in the vacuum chamber restored to atmospheric pressure, and the target element can be removed, completing the film deposition process.

[0047] In the above implementation process, a magnetron sputtering target that simultaneously includes a twin magnetron sputtering target 142 and a single magnetron sputtering target 143 is used. Since a single magnetron sputtering target is suitable for depositing thin films of a single material, the twin magnetron sputtering target can deposit alloy or compound thin films by adjusting the combination of the two targets. Therefore, the combination of the two satisfies the coating requirements of more material systems and various film layer structures, further increasing the functionality of depositing film layer combinations.

[0048] Please continue to refer to Figure 3 and Figure 4 In some alternative embodiments, the magnetron sputtering system 140 may further include an anode layer ion source 144. The anode layer ion source 144 may be disposed on the side of the magnetron sputtering target on the mounting bracket 141 and may be configured to generate cations for ion cleaning of the target 200.

[0049] The anolyte ion source 144, when connected to the positive terminal of a power source, ionizes gases used in the coating process, such as argon, generating high-energy cations that accelerate and collide with the surface of the target part 200. Impurity atoms on the surface of the target part 200 are ionized by colliding with these cations, thus achieving physical sputtering cleaning. Furthermore, the cations can also chemically react with impurities on the surface of the target part 200 to generate volatile substances for removal, thereby achieving chemical cleaning. Ultimately, the purpose of ion cleaning of the target part 200 is achieved.

[0050] In the above-described process, an ion source 144 is provided on the mounting bracket 141 to perform ion cleaning on the surface of the target part 200, thereby removing impurities from the surface of the target part 200. This further improves the uniformity of the coating. Furthermore, by removing impurities from the surface of the target part 200, the adhesion between the film layer and the surface of the target part 200 is improved, better preventing film layer detachment. This avoids problems such as irregular particle arrangement and voids formed at the detachment sites caused by localized film layer base detachment, ultimately further improving the uniformity of the coating.

[0051] Please continue to refer to Figure 3 and Figure 4 In some alternative embodiments, the magnetron sputtering target may have a first length direction. This first length direction may be aligned with the radial direction of the mounting bracket 141. The radial direction may be a direction passing through the center of the plate and located within the plane of the mounting bracket 141.

[0052] In a preferred embodiment, the anode layer ion source 144 may have a second length direction. This second length direction may also be aligned with the radial direction of the mounting bracket 141. The angle between any two adjacent first length directions and the angle between adjacent first and second directions are equal. That is, the twin magnetron sputtering targets 142, the single magnetron sputtering target 143, and the anode layer ion source 144 can be arranged in a "star" shape on the mounting bracket 141.

[0053] In the above process, by radially distributing the magnetron sputtering target along the mounting bracket 141, the coverage of the magnetron sputtering target on the target 200 is increased when the target 200 is rotated for coating. Especially when coating large mirror surfaces, the ions emitted by the magnetron sputtering target can reach all positions on the target 200 more fully, thereby further improving the uniformity of the coating.

[0054] For the plating installation of a large target part 200 with the rotation axis as the central axis, due to the presence of a coaxial singularity at the center, the small central area of ​​the target part 200 and the long deposition time make it difficult to guarantee the uniformity of the center of the target part 200. Even with the use of a correction plate for adjustment, it is impossible to achieve the required uniformity of the film layer. Therefore, it is necessary to use an eccentric rotation method for the workpiece and radial movement of the magnetron sputtering target to align the sputtered portion of the magnetron sputtering target material with the center of the target part 200 at the same sputtering rate to achieve the desired uniformity of the film layer.

[0055] Taking reflecting mirrors as an example, they are mainly concave mirrors, and can be planes, spheres, coaxial aspherical surfaces, off-axis aspherical surfaces, and freeform surfaces. Here, a standard concave spherical mirror with a diameter of 4000mm and a depth of 200mm is used as a specific example for illustration. Figure 5 As shown, Figure 5 This is a schematic diagram showing the relative position of the magnetron sputtering target to the reflector provided in this application embodiment. When other reflector surfaces exhibit changes in shape, the equipment can adjust the position and pitch angle of the magnetron sputtering target to maintain a relatively stable positional relationship between the magnetron sputtering target and the mirror surface. Then, through the combination of the non-concentric rotation system of the workpiece and the motion of the magnetron sputtering target, along with adjustments to the coating process and the correction plate, uniformity of the film distribution is achieved.

[0056] exist Figure 5 In the process, there is a discharge sputtering region between the magnetron sputtering target and the reflector. In the middle part of the magnetron sputtering target, corresponding to region I of the reflector, the uniformity of film thickness distribution can be controlled by using a correction plate in front of the magnetron sputtering target. In the inner end of the sputtering process, which is region II, the center of the reflector, it is difficult to achieve the target uniformity of film thickness distribution by using the correction plate alone. It is necessary to adjust the position of the inner endpoint of the magnetron sputtering target and combine it with process conditions to achieve uniformity of film thickness distribution.

[0057] A certain distance from the inner endpoint of a magnetron sputtering target can be defined as the "nominal point". Figure 5 For the reflective mirror of the shape shown, nominal points were placed at distances of 150 mm from the mirror: a (-50), b (zero position), c (+50), d (+100), and e (+150). The distances from the target surface to the mirror were calculated, and the data are given in Table 1. Points a, b, c, d, and e are located 50 mm beyond the rotation axis, on the rotation axis, and 50 mm, 100 mm, and 150 mm away from the rotation axis, respectively. At the edge of the reflector, the distance from the magnetron sputtering target was controlled at 150 mm.

[0058] Figure 6The image shown is a contour plot of the thin film deposition thickness, obtained from an actual measurement at a distance of 150 mm, reflecting the pattern obtained during static deposition. To ensure uniform film distribution, the workpiece (mirror) needs to be moved to achieve relative motion between the workpiece and the magnetron sputtering target along their length.

[0059] First, the nominal point A of the magnetron sputtering target was placed at positions a (+50), b (0), c (-50), d (-100), and e (-150), respectively. Simulations were then used to obtain the film thickness distribution curves after the mirror rotated for one full revolution, as shown below. Figure 7 and Figure 8 As shown, Figure 7 This is the film thickness distribution obtained by simulation calculation under five working conditions provided in the embodiments of this application; Figure 8 This is the film thickness distribution in the central region obtained through simulation calculations under five different workstation conditions, as provided in the embodiments of this application. Figure 7 As can be seen, outside the central region (Ф400mm), the film thickness distribution is relatively uniform; from Figure 8 As can be seen, there are three different workstation settings in the central area with relatively small differences in film thickness distribution. In this case, the film layer can be evenly distributed in the area by means of correction plates or other methods.

[0060] For the plating and mounting method of a large target part 200 whose rotation axis is not the central axis, such as Figure 9 As shown, Figure 9 This is a schematic diagram of planetary motion with a small radius of revolution after the reflector is eccentrically placed according to an embodiment of this application. The center of rotation of the reflector is offset from the center of revolution D (which can be the central axis of the device), thus achieving planetary rotation. The distance between the revolution axis and the rotation axis of the target component 200 is marked as D. In order to prevent the vacuum chamber 110 from being too large, and to prevent the positional relationship between the magnetron sputtering target and the mirror from changing too much, the value of D can be controlled within 15cm. Therefore, two cases with D values ​​of 10cm and 5cm were set, and the motion trajectory of some points on the central region (region II) of the mirror was traced using Matlab software, as shown below. Figure 9 As shown.

[0061] Please see Figure 10 , Figure 10 This is a linear trajectory diagram of some evenly distributed points in the central region of the mirror surface during eccentric rotation when the D value is 10cm, as provided in the embodiments of this application. Where the D value is 5cm, the numbers on the diagram represent the distance between the point forming the trajectory and the center of rotation. Combined with the data in Table 1, it can be seen that the film layer is further homogenized after eccentric rotation, and the calculated values ​​can meet the 3% uniformity control requirement. Therefore, 12 rotations can achieve complete deposition of the thin film layer. Here, the rotational speed ratio between the revolution and the rotation is set to 1:12, and the interval between these evenly distributed points is 2.5cm, specifically as follows... Figure 11As shown, Figure 11 This is a distribution diagram of some evenly distributed points in the central region of the mirror surface during eccentric rotation, provided in an embodiment of this application.

[0062] Table 1

[0063] because Figure 10 This describes the planetary motion of a reflective mirror, showing the trajectories of points at different distances from its center of rotation on the mirror surface. Specifically, it means that in addition to the mirror's rotation around its own center (rotation) driven by the supporting device, the entire mirror also rotates around the drive output shaft of the drive component within the supporting assembly (revolution). In short, it's planetary motion. The trajectory of the center of rotation on the reflective mirror is as follows... Figure 10 As shown in the first image, the motion of the rotation center on the reflective mirror surface is a circular motion around the drive output shaft of the drive assembly. Therefore, from... Figure 9 and 10 It can be seen that, except for the points at the center of rotation and the center of revolution, all points move within a strip, and the width of the strip is related to the D value and the distance of the point from the center of rotation. The eccentric rotation makes the film thickness distribution within this strip more uniform. (Refer to...) Figure 12 , Figure 12 This is a diagram showing the linear motion trajectory of some evenly distributed points in the central region of the mirror surface during eccentric rotation when the D value is 5cm, as provided in the embodiments of this application. Except for the change in the D value, the other conditions are the same as... Figure 11 Same. Here, the D value is 5cm, and the numbers on the graph also represent the distance between the point forming the trajectory and the center of rotation. Figure 12 The motion of the middle reflecting mirror and Figure 10 Similarly, therefore from Figure 12 It can be seen that the trajectory of the rotation center point is a circle around the revolution center; the trajectory of the revolution center point is evenly distributed on a circular area with a diameter of 4D, which avoids the appearance of "singularities" in the central region of the mirror. Based on the above analysis, the film thickness distribution in the central region of the mirror will be further homogenized during eccentric star rotation sputtering deposition. In the outer ring of the mirror surface, that is... Figure 5 In Zone I (the area outside the center of approximately Ф400mm), the mirror will rotate and sweep across the top of the linear magnetron sputtering target. The film thickness in each part can be made uniform by adjusting the correction plate on the magnetron sputtering target.

[0064] Please refer to Figure 13 , Figure 13This is a schematic diagram showing the distribution of the gas supply pipeline 150 in the coating equipment 100 provided in this application embodiment. In some optional embodiments, the gas supply pipeline 150 may include a working gas pipeline 1511 and a reaction gas pipeline 1521, and the target gas may include both the working gas and the reaction gas. The working gas pipeline 1511 may include at least two working gas branches 1511, and a first valve 1512 may be provided on the working gas branch 1511. One end of the working gas branch 1511 may be connected to the gas filling system 120, and the other end of the working gas branch 1511 may be connected to the vacuum chamber 110, and respectively connected to the magnetron sputtering target and the anode layer ion source 144, so as to supply working gas to the magnetron sputtering target and the anode layer ion source 144, respectively. The reaction gas pipeline 1521 may include at least two reaction gas branches 1521, and a second valve 1522 may be provided on the reaction gas branch 1521. One end of the reaction gas branch 1521 can be connected to the gas filling system 120, and the other end of the reaction gas branch 1521 can be connected to the side gas distribution pipeline of the magnetron sputtering target and the anode layer ion source 144 in the vacuum chamber 110, and respectively connected to the magnetron sputtering target and the anode layer ion source 144 to deliver working gas to the magnetron sputtering target and the anode layer ion source 144.

[0065] The working gas can be argon, etc., and the reactant gas can be nitrogen or oxygen, etc.

[0066] For example, the number of working gas branches 1511 can be five, and the number of reactant gases can also be five. Each working gas branch 1511 and reactant gas branch 1521 can be equipped with a digital mass flow meter, serving as a first valve 1512 and a second valve 1522 respectively, to achieve five-stage adjustable flow of the target gas delivered to each magnetron sputtering target. Each working gas branch 1511 and reactant gas branch 1521 can also be provided with a multi-layer gas equalization structure to ensure uniform gas filling, thereby further ensuring the uniformity of the coating.

[0067] In the above implementation process, by configuring two branches for the gas supply line 150 that delivers the target gas to each magnetron sputtering target, and installing a first valve 1512 or a second valve 1522 on each branch, the amount of target gas can be adjusted in five stages during the coating process through the first valve 1512 or the second valve 1522 on each branch. This allows for more precise control over the amount and uniformity of the target gas, ultimately further improving the uniformity of the coating.

[0068] Please continue to refer to Figure 1In some optional embodiments, the vacuum chamber 110 may include an upper vacuum chamber 111, a lower vacuum chamber 112, a lifting system, a movable trolley 116, and a support rail 115. The upper vacuum chamber 111 may include an upper wall and an upper flange formed by the edge of the upper wall surrounding the vacuum chamber 110, and the lower vacuum chamber 112 may include a lower wall and a lower flange formed by the edge of the lower wall surrounding the vacuum chamber 110. The upper flange can be detachably connected to the lower flange. The lifting system 113 can be set at a first target position and includes a supporting hydraulic cylinder 113 and four lifting mechanism support frames 114 located on the side of the upper vacuum chamber 111; the four lifting mechanism support frames 114 support the upper vacuum chamber 111. The support rail can be slidably set at a second target position and can support the movable trolley 116; the movable trolley 116 supports the lower vacuum chamber 112 through four lifting mechanism support columns 117.

[0069] In conjunction with the preceding embodiments, the magnetron sputtering system 140 can be disposed on the inner wall of the upper vacuum chamber 111, and the support device can be disposed on the inner wall of the lower vacuum chamber 112. Specifically, the upper vacuum chamber 111 and the lower vacuum chamber 112 can be detachably sealed together.

[0070] The target component can enter and exit the vacuum chamber 110 by being hoisted in and out. During the process of hoisting the target component into and out of the vacuum chamber 110, the upper vacuum chamber 111 can be moved upward by the lifting system 113 first, and the lower vacuum chamber 112 can be moved horizontally by the movable support.

[0071] In the above-described process, the lifting system 113, in conjunction with the movable support, enables the upper vacuum chamber 111 to be raised and lowered, and the lower vacuum chamber 112 to be moved horizontally. This facilitates the insertion and removal of the target component from the vacuum chamber 110, thereby improving the insertion and removal of the target component and shortening the working cycle of the coating process. Furthermore, because the target component can be quickly inserted and removed, the time the inside of the vacuum chamber 110 is exposed to air is reduced, minimizing the entry of water vapor and other impurities from the air, thus ensuring the quality of the deposited film.

[0072] Please refer to Figure 14 , Figure 14This is a functional block diagram of the coating equipment control system 130 in the coating equipment 100 provided in this application embodiment. In some optional embodiments, the coating equipment control system 130 may include a vacuum sensor 135, an optical sensor 131, a voltage sensor 132, a controller 133, a flow regulator 134, and cooling pipes. The optical sensor 131 may be installed in the vacuum chamber 110 and may be used to collect vacuum signals. The vacuum sensor 135 may be electrically connected to the controller 133 via an EtherCAT bus. The controller 133 may specifically be a PLC (Programmable Logic Controller). The optical sensor 131 may be configured to monitor the optical parameters of the target gas and send optical parameter signals to the controller 133. A water flow regulator 136 is installed on the cooling pipe and is electrically connected to the controller 133; the water flow regulator 136 is configured to monitor the temperature and flow rate of the coolant and send them to the controller 133; and receive control signals to control the flow rate of the coolant. Vacuum sensor 135 is configured to monitor the vacuum level of vacuum chamber 110 and send a vacuum level parameter signal to controller 133. Voltage sensor 132 may be disposed within vacuum chamber 110 and electrically connected to controller 133. Voltage sensor 132 may be configured to monitor the voltage parameters of target gas and / or magnetron sputtering target and send a voltage parameter signal to controller 133. Flow regulator 134 may be disposed on gas supply line 150 and electrically connected to controller 133 to receive and respond to flow regulation control signals sent by controller 133. Controller 133 may be configured to receive optical parameter signals and voltage parameter signals, and send flow regulation control signals to flow regulator 134 based on the optical parameter signals and voltage parameter signals.

[0073] Specifically, this can be implemented by collecting optical and voltage parameter data, as well as corresponding target gas flow rate data, during the coating process, and removing noise and invalid data points. Key features, such as spectral peak positions, intensity ratios, and voltage fluctuation amplitudes, can then be extracted from the optical and voltage parameter data. A mapping relationship between the optical and voltage parameters and the expected flow rate is established using machine learning or statistical methods. After establishing this mapping relationship, the target flow rate value for the corresponding time period can be determined based on the process requirements of each stage of the coating process. The target flow rate value is compared with the current actual flow rate value (based on the monitored optical and voltage parameters and the pre-established mapping relationship), and the deviation value and its trend are calculated. Finally, based on the deviation value and its trend, the adjustment value for increasing or decreasing the flow rate is determined. A specific flow rate regulation control signal is generated based on this adjustment value and sent to the flow regulator 134 to guide it in adjusting the valve opening.

[0074] The flow regulator 134 can be a digital mass flow meter. The voltage sensor 132 can be installed in the vacuum chamber 110 to monitor the voltage of the target gas, or it can be installed in the vacuum chamber 110 and connected to the magnetron sputtering target to monitor the voltage of the magnetron sputtering target. The optical sensor 131 can monitor optical parameters such as glow color and light intensity of the target gas through a filter. The optical sensor 131 and the voltage sensor 132 can send their respective monitored parameters to the controller 133. The controller 133 can generate a flow regulation control signal based on the PDF control algorithm and send it to the flow regulator 134. The flow regulator 134 can receive and respond to this flow regulation control signal to control the supply quantity and uniformity of the target gas.

[0075] In the above implementation process, the optical parameters and voltage parameters during the coating process are monitored by the optical sensor 131 and the voltage sensor 132, respectively, and the monitored parameters are sent to the controller 133. The controller 133 controls the flow regulator 134 based on the parameters, thereby controlling the supply and uniformity of the target gas, and further improving the uniformity of the coating.

[0076] Please refer to Figure 15 , Figure 15 This is a flowchart of a coating method based on a coating equipment provided in an embodiment of this application. Based on the same concept, an embodiment of this application provides a coating method based on a coating equipment. The coating equipment may include a vacuum chamber system, a composite vacuum system, a magnetron sputtering system, a workpiece rotation system, a gas filling system, and a coating equipment control system. The vacuum chamber system includes a vacuum chamber; through the combined application of these systems, it is possible to complete the coating of multilayer optical thin films on ultra-large optical components with or without central holes, such as planar, spherical, coaxial aspherical, and off-axis aspherical surfaces, and simultaneously, the coating of silicon thin films on silicon carbide surfaces.

[0077] This method should be applicable to the control system of coating equipment and may include: Step S110: When the vacuum chamber reaches the vacuum level required for coating, control the gas filling system to deliver the target gas to the vacuum chamber.

[0078] In step S110 above: the vacuum chamber can be evacuated using a vacuum acquisition system to achieve the vacuum level required for coating. Specifically, the vacuum acquisition method can be as follows: In the vacuum acquisition stage, a backing pump can be used to evacuate the target vacuum chamber. When the pressure in the target vacuum chamber drops to a first pressure value, for example, 5-8 Pa, a molecular pump and a cryogenic pumping device are used to evacuate the target vacuum chamber to a higher vacuum level until the target vacuum chamber reaches a high vacuum degree. Then, a cryogenic pump is used to evacuate the target vacuum chamber to a higher vacuum level. For example, in one embodiment, when the gas pressure in the target vacuum chamber drops to, for example, 2-5 × 10⁻⁶ Pa... -4 Under the condition of Pa, it is determined that the target vacuum chamber has reached a high vacuum, so that the thin film preparation stage can begin.

[0079] In the thin film preparation stage, it is generally necessary to fill the chamber with an inert gas (such as argon or helium) or a reactive gas (such as hydrogen or oxygen). In this solution, a cryogenic evacuation device and a molecular pump are used to evacuate the target vacuum chamber during the thin film preparation stage. In one embodiment of this application, the gas pressure in the target vacuum chamber is as low as, for example, 2 to 5 × 10⁻⁶. -4 Under the condition of Pa, the high vacuum valve of the cryogenic pump can be closed, and the valve can be opened to fill the target vacuum chamber with inert gas or reactive gas. In this stage, the target vacuum chamber is evacuated by a cryogenic pump and a molecular pump to maintain the vacuum level required for the coating stage, and the magnetron sputtering coating or other coating processes can be started, such as magnetron sputtering coating.

[0080] Step S130: When the target gas in the vacuum chamber reaches the preset concentration value, start the magnetron sputtering system.

[0081] In step S130 above: the preset concentration value is usually the value at which the pressure in the vacuum chamber reaches a level suitable for glow discharge, for example: 3 × 10⁻⁶. -1 Pa, more preferably 2~6 ×10 -1 Pa.

[0082] Step S150: Monitor the coating process of the target part, and control the target gas quantity, magnetron sputtering target power and thin film deposition rate based on the monitoring results.

[0083] In step S150 above: the deposition rate of different material films is closely related to the power of the magnetron sputtering power supply. Within the normal operating range of the magnetron sputtering power supply, the higher the power, the higher the deposition rate. Various parameters during the coating process can be monitored through the coating equipment control system, and the flow rate regulator can be controlled based on the monitored parameters to control the supply quantity and uniformity of the target gas.

[0084] The above implementation process can be the same as the coating equipment described above, and will not be repeated here.

[0085] Please refer to Figure 16 , Figure 16 This is a flowchart of step S150 in the coating method based on a coating equipment provided in this application embodiment. In some optional embodiments, the coating equipment control system may include a vacuum sensor, an optical sensor, a voltage sensor, a controller, a flow regulator, and a water flow regulator.

[0086] This method can be specifically applied to a controller, and step S150 may include: Step S151: Obtain the vacuum degree parameter signal monitored by the vacuum sensor.

[0087] Step S152: Acquire the optical parameter signals monitored by the optical sensor and the voltage parameter signals monitored by the voltage sensor.

[0088] In step S152 above: the optical parameter signal monitored by the optical sensor can be the spectral information of the glow region of the target gas during magnetron sputtering coating; the optical parameter signal monitored by the optical sensor can also be the light intensity information of the glow region of the target gas during magnetron sputtering coating. The voltage parameter signal can be the voltage information of the target gas and / or the magnetron sputtering target during magnetron sputtering coating.

[0089] Step S153: Acquire the temperature and flow signals of the coolant monitored by the water flow regulator.

[0090] Step S154: Based on the optical parameter signal, the voltage parameter signal, and the temperature and flow rate signals of the coolant, send a flow regulation control signal to the flow regulator.

[0091] In step S154 above: the optical sensor and voltage sensor can send their respective monitored parameter signals to the controller. The vacuum sensor and water flow regulator also send their respective monitored parameter signals to the controller. After receiving the signals, the controller can generate a flow regulation control signal based on the PDF control algorithm and send it to the flow regulator. The flow regulator can receive and respond to the flow regulation control signal to control the supply amount and uniformity of the target gas.

[0092] In the above implementation process, optical and voltage parameters during the coating process are monitored by optical and voltage sensors, respectively, and the monitored parameters are sent to the controller. The controller controls the flow regulator based on the parameters, thereby controlling the supply and uniformity of the target gas and further improving the uniformity of the coating.

[0093] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A coating apparatus, characterized by, The coating equipment comprises a vacuum chamber, a composite vacuum system, a magnetron sputtering system, a workpiece rotating system, a gas filling system and a coating equipment control system; The composite vacuum system is communicated with the vacuum chamber through a vacuum pipeline and a vacuum valve, and obtains a vacuum environment of a relevant order of magnitude required by coating in the vacuum chamber; The gas filling system is connected with the vacuum chamber through a gas supply pipeline, and is configured to deliver a target gas into the vacuum chamber; wherein the target gas comprises a related gas used in a sputtering coating process; The coating equipment control system is configured to monitor a coating process of a target workpiece and control the coating process; The workpiece rotating system is located in the vacuum chamber and is configured to carry the target workpiece to rotate concentrically or planetarily in the vacuum chamber to coat the target workpiece; The magnetron sputtering system comprises a mounting bracket and a magnetron sputtering target; the mounting bracket is located in the vacuum chamber and is arranged on the top of the vacuum chamber; the magnetron sputtering target is arranged below the mounting bracket; the magnetron sputtering target is installed on the mounting bracket through a three-degree-of-freedom driving mechanism, and the three-degree-of-freedom driving mechanism is configured to drive the magnetron sputtering target to move in a radial direction of the center of the vacuum chamber, to move a magnetron sputtering distance between the target workpiece and to adjust an angle; The mounting bracket is concentric with the center of the vacuum chamber; wherein the magnetron sputtering target is distributed around the center of the vacuum chamber.

2. The coating apparatus according to claim 1, wherein The magnetron sputtering target comprises a twin magnetron sputtering target and a single magnetron sputtering target.

3. The coating apparatus of claim 1, wherein, The magnetron sputtering system further comprises an anode layer ion source; The anode layer ion source is arranged on the side of the mounting bracket where the magnetron sputtering target is arranged, and is configured to generate positive ions to perform ion cleaning on the target workpiece.

4. The coating apparatus according to claim 3, wherein The magnetron sputtering target has a first length direction; The first length direction is consistent with a radial direction of the mounting bracket; wherein the radial direction is a direction passing through the center of the vacuum chamber and located in a plane of the mounting bracket.

5. The coating apparatus of claim 1, wherein, The gas supply pipeline comprises a working gas pipeline and a reaction gas pipeline, and the target gas comprises working gas and reaction gas; The working gas pipeline comprises at least two working gas branches, and a first valve is arranged on each working gas branch; One end of each working gas branch is connected to the gas filling system, and the other end of each working gas branch is located in the vacuum chamber and connected to the magnetron sputtering target and the anode layer ion source respectively to deliver the working gas to the magnetron sputtering target and the anode layer ion source respectively; The reaction gas pipeline comprises at least two reaction gas branches, and a second valve is arranged on each reaction gas branch; One end of each reaction gas branch is connected to the gas filling system, and the other end of each reaction gas branch is connected to a side gas distribution pipeline of the magnetron sputtering target and the anode layer ion source in the vacuum chamber, and is connected to the magnetron sputtering target and the anode layer ion source respectively to deliver the working gas to the magnetron sputtering target and the anode layer ion source respectively.

6. The coating apparatus of claim 1, wherein, The vacuum chamber comprises an upper vacuum chamber system, a lower vacuum chamber, a lifting system, a movable motion trolley and a support rail; the vacuum chamber system comprises a vacuum chamber; The upper vacuum chamber comprises an upper wall and an upper flange opening of the vacuum chamber formed by the edges of the upper wall, and the lower vacuum chamber comprises a lower wall and a lower flange opening of the vacuum chamber formed by the edges of the lower wall; The upper flange opening is detachably connected with the lower flange opening; The lifting system is arranged at a first target position and comprises a supporting hydraulic cylinder and four lifting mechanism support frames located at the side of the upper vacuum chamber; the four lifting mechanism support frames bear the upper vacuum chamber; The supporting rail is arranged at a second target position and bears the movable motion trolley; the movable motion trolley supports the lower vacuum chamber through four lifting mechanism support columns.

7. The coating apparatus according to any one of claims 1 to 6, characterized in that, The coating equipment control system comprises a vacuum sensor, an optical sensor, a voltage sensor, a controller, a gas flow regulator and a cooling pipeline; The vacuum sensor is arranged in the vacuum chamber and is used for collecting a vacuum degree signal; the vacuum sensor is electrically connected with the controller through an EtherCAT bus; The optical sensor is arranged in the vacuum chamber and is electrically connected with the controller; The cooling pipeline is provided with a water flow regulator, and the water flow regulator is electrically connected with the controller; The vacuum sensor is configured to monitor the vacuum degree of the vacuum chamber and send a vacuum degree parameter signal to the controller; The optical sensor is configured to monitor the optical parameter of the target gas and send an optical parameter signal to the controller; The voltage sensor is arranged in the vacuum chamber and is electrically connected with the controller; The voltage sensor is configured to monitor the voltage parameter of the target gas and / or the magnetron sputtering target and send a voltage parameter signal to the controller; The flow regulator is arranged on the gas supply pipeline and is electrically connected with the controller to receive and respond to a flow regulation control signal sent by the controller; The water flow regulator is configured to monitor the temperature and flow of the cooling liquid and send to the controller; and receive the control signal of the controller to control the flow of the cooling liquid; The controller is configured to receive the optical parameter signal and the voltage parameter signal and send the flow regulation control signal to the flow regulator based on the optical parameter signal and the voltage parameter signal.

8. A coating method based on a coating apparatus, characterized by, The coating equipment comprises a vacuum chamber, a composite vacuum system, a magnetron sputtering system, a workpiece rotating system, a gas filling system and a coating equipment control system; The method is applied to the coating equipment control system and comprises: When the vacuum chamber reaches a required vacuum degree for coating, the gas filling system is controlled to deliver target gas to the vacuum chamber; When the target gas in the vacuum chamber reaches a preset concentration value, the magnetron sputtering system is started; and The coating process of the target workpiece is monitored, and the amount of target gas, the power of the magnetron sputtering target and the deposition rate of the thin film are controlled based on the monitoring result.

9. The method of claim 8, wherein, In the coating equipment control system, The coating equipment control system comprises a vacuum sensor, an optical sensor, a voltage sensor, a controller, a flow regulator and a water flow regulator; The method is particularly applied to the controller, and the coating process of the target piece is monitored, and the target gas amount, the power of the magnetron sputtering target and the deposition rate of the film are controlled based on the monitoring result, comprising: acquiring a vacuum degree parameter signal monitored by the vacuum sensor; acquiring an optical parameter signal monitored by the optical sensor and a voltage parameter signal monitored by the voltage sensor; acquiring a temperature and flow signal of the cooling liquid monitored by the water flow regulator; and sending a flow adjustment control signal to the flow regulator based on the vacuum degree parameter signal, the optical parameter signal, the voltage parameter signal and the temperature and flow signal of the cooling liquid.

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