Method for manufacturing semiconductor devices

Abstract

The present invention provides a method for manufacturing a semiconductor device having good electrical properties. [Solution] A method for manufacturing a semiconductor device includes: forming a first oxide film and a second oxide film on an insulating film 224A by sputtering; forming a third oxide film on the second oxide film; forming a conductive film on the third oxide film; processing the first oxide film, the second oxide film, the third oxide film and the conductive film into island shapes using lithography to form oxide 230a, oxide 230b, oxide layer 243B and conductive layer 242B; depositing an insulating film 272A on the insulating film 224A, oxide 230a, oxide 230b, oxide layer 243B and conductive layer 242B; depositing an insulating film 273A on the insulating film 272A; and depositing an insulating film that will become an insulator 280 on the insulating film 273A.

Description

[Technical Field]

[0001] One aspect of the present invention relates to a semiconductor device and a method for manufacturing a semiconductor device. One aspect of the invention relates to semiconductor wafers, modules, and electronic devices.

[0002] In this specification, a semiconductor device refers to a device that can function by utilizing semiconductor properties. This refers to semiconductor devices in general, including semiconductor elements such as transistors, semiconductor circuits, computing devices, and memory devices. A device is one form of a semiconductor device. Display devices (liquid crystal display devices, light-emitting display devices, etc.), projection Devices, lighting devices, electro-optical devices, energy storage devices, memory devices, semiconductor circuits, imaging devices, and electricity Sub-devices, for example, can sometimes be said to possess semiconductor equipment.

[0003] Furthermore, one aspect of the present invention is not limited to the above-mentioned technical field. One aspect of the present invention relates to a product, method, or method of manufacture. This refers to a process, machine, manufacture, or composition. This concerns (the tar). [Background technology]

[0004] In recent years, semiconductor equipment development has progressed, with LSIs, CPUs, and memory being the main components used. A CPU is a semiconductor integrated circuit (at least transistors and) separated from a semiconductor wafer. It is an assembly of semiconductor elements that have memory and electrodes that serve as connection terminals.

[0005] Semiconductor circuits (IC chips) such as LSIs, CPUs, and memory are mounted on circuit boards, such as printers. It is mounted on a circuit board and used as one of the components in various electronic devices.

[0006] Furthermore, a transistor is constructed using a semiconductor thin film formed on a substrate having an insulating surface. The technology is attracting attention. This transistor is used in integrated circuits (ICs) and image display devices (simply display). It is widely applied to electronic devices (also referred to as devices). Applicable to transistors. Silicon-based semiconductor materials are widely known as capable semiconductor thin films, but other materials include Oxide semiconductors are attracting attention.

[0007] Furthermore, transistors using oxide semiconductors have extremely low leakage current in the non-conductive state. It is known to be small. For example, the leakage current of a transistor using an oxide semiconductor is Low-power CPUs and other devices that take advantage of this characteristic have been disclosed (see Patent Document 1). ). Also, for example, the characteristic of low leakage current in transistors using oxide semiconductors. Applications of this technology include the disclosure of memory devices that can retain memory contents over long periods of time. (See Patent Document 2.)

[0008] Furthermore, in recent years, with the miniaturization and weight reduction of electronic devices, the need for even higher density integrated circuits has increased. Demand is increasing. Furthermore, there is a need for improved productivity in semiconductor devices, including integrated circuits. [Prior art documents] [Patent Documents]

[0009] [Patent Document 1] Japanese Patent Publication No. 2012-257187 [Patent Document 2] Japanese Patent Publication No. 2011-151383 [Overview of the project] [Problems that the invention aims to solve]

[0010] One aspect of the present invention aims to provide a semiconductor device having good electrical characteristics. Alternatively, one aspect of the present invention provides a semiconductor device having normally-off electrical characteristics. One of the challenges is to achieve this. Alternatively, one aspect of the present invention provides a semiconductor device with good reliability. One of the objectives is to provide a semiconductor with a high on-current. Alternatively, one aspect of the present invention is a semiconductor with a high on-current. One of the objectives is to provide an apparatus. Alternatively, one aspect of the present invention provides a high frequency characteristic. One objective is to provide a semiconductor device having a micro One of the objectives is to provide a semiconductor device that can be miniaturized or highly integrated. One aspect of the invention aims to provide a highly productive semiconductor device.

[0011] One aspect of the present invention provides a semiconductor device capable of retaining data over a long period of time. This is one of the challenges. One aspect of the present invention provides a semiconductor device with a high information writing speed. One of the challenges is to provide a semiconductor device with a high degree of design freedom. This is one of the challenges. One aspect of the present invention is a semiconductor device that can reduce power consumption. One of the objectives of this invention is to provide a novel semiconductor device. This will be one of the challenges.

[0012] Furthermore, the description of these problems does not preclude the existence of other problems. One approach does not require that all of these issues be resolved. The title will become clear from the description in the specification, drawings, claims, etc. It is possible to extract other issues from the descriptions in the drawings, claims, etc. [Means for solving the problem]

[0013] One aspect of the present invention comprises a first conductor, first and second insulators, and first and second acids In a method for manufacturing a semiconductor device having an oxide, a first oxide is formed on a substrate, and the first A first insulator is formed on the oxide, and an opening is formed in the first insulator that reaches the first oxide. The first oxide film is formed so as to be in contact with the first oxide and the first insulator at the opening. A film is formed, and a first insulating film is formed on the first oxide film, and microwave treatment is performed on the first insulating film. The first insulating film and the first oxide, or either one or both, are subjected to heat treatment. The process is carried out to form a first conductive film on the first insulating film, and a portion of the first oxide film and the first insulating film are formed. Remove a portion of the first conductive film and a portion of the first insulator until the upper surface of the first insulator is exposed. The oxide, second insulator, and first conductor are formed, and the microwave treatment is performed under reduced pressure and This is a method for manufacturing semiconductor devices, which involves using an oxygen-containing gas and performing the heat treatment under reduced pressure. ru.

[0014] Furthermore, one aspect of the present invention comprises a first conductor, first and second insulators, and first and second In a method for manufacturing a semiconductor device having two oxides, the first oxide is formed on a substrate. A first insulator is formed on the first oxide, and microwave treatment is performed on the first insulator. The first insulator and the first oxide, or either one or both, are subjected to heat treatment. An opening is formed in the first insulator that reaches the first oxide, and in the opening, the first oxide and A first oxide film is formed so as to be in contact with the first insulator, and the first insulating film is formed on the first oxide film. A film is formed, and a first conductive film is formed on the first insulating film, and a part of the first oxide film, the first insulating film Remove a portion of the edge film and a portion of the first conductive film until the upper surface of the first insulator is exposed. , a second oxide, a second insulator, and a first conductor are formed, and microwave processing is performed under reduced pressure. A method for manufacturing semiconductor devices, wherein the process is carried out using an oxygen-containing gas, and the heat treatment is performed under reduced pressure. It is the law.

[0015] Furthermore, one aspect of the present invention comprises a first conductor, first to third insulators, and first and second In a method for manufacturing a semiconductor device having an oxide, a first oxide is formed on a substrate, A first insulator is formed on the first oxide, and an opening is made in the first insulator that reaches the first oxide. A first oxide is formed so as to be in contact with the first oxide and the first insulator at the opening. A film is formed, a first insulating film is formed on the first oxide film, and a first conductive film is formed on the first insulating film. A film is formed, and a portion of the first oxide film, a portion of the first insulating film, and a portion of the first conductive film are used. Remove until the top surface of the first insulator is exposed, then remove the second oxide, the second insulator, and the first A conductor is formed, a third insulator is formed on the first conductor, and a luminous material is applied from the third insulator. A cross-wave treatment is performed on either the first insulator or the first oxide, or both. Heat treatment is performed, and microwave treatment is carried out under reduced pressure using an oxygen-containing gas. The principle is a method for fabricating semiconductor devices under reduced pressure.

[0016] Furthermore, it is preferable that the microwave processing pressure be 133 Pa or higher. stomach.

[0017] Furthermore, it is preferable that the heat treatment temperature be between 350°C and 500°C. It seems so.

[0018] Furthermore, it is preferable that the microwave treatment and the heat treatment be performed consecutively. .

[0019] Furthermore, it is preferable that the number of consecutive operations performed in the above procedure is between 2 and 10. stomach. [Effects of the Invention]

[0020] According to one aspect of the present invention, a semiconductor device having good electrical characteristics can be provided. Alternatively, according to one aspect of the present invention, a semiconductor device having normally-off electrical characteristics is provided. This is possible. Alternatively, according to one aspect of the present invention, a reliable semiconductor device can be provided. This is possible. Alternatively, according to one aspect of the present invention, a semiconductor device with a large on-current is provided. This is possible. Alternatively, according to one aspect of the present invention, a semiconductor device having high frequency characteristics can be provided. It can be provided. Alternatively, according to one aspect of the present invention, a semiconductor capable of miniaturization or high integration can be provided. A conductive device can be provided. Alternatively, according to one aspect of the present invention, a highly productive semiconductor can be provided. We can provide the device.

[0021] Alternatively, a semiconductor device capable of retaining data over a long period of time can be provided. Alternatively, it is possible to provide a semiconductor device with a high data writing speed. Or, designing it yourself It is possible to provide semiconductor devices with high flexibility, or to reduce power consumption. We can provide semiconductor devices. Or, we can provide novel semiconductor devices. .

[0022] Furthermore, the description of these effects does not preclude the existence of other effects. One embodiment does not need to have all of these effects. Other effects are described in the specification. This will become clear from the description in the drawings, claims, etc., and the specification, drawings, claims From descriptions such as these, it is possible to extract other effects. [Brief explanation of the drawing]

[0023] [Figure 1] Figure 1(A) is a top view of a semiconductor device according to one aspect of the present invention. Figures 1(B) and 1(C) are cross-sectional views of a semiconductor device according to one aspect of the present invention. [Figure 2] Figures 2(A) and 2(B) are cross-sectional views of a semiconductor device according to one embodiment of the present invention. [Figure 3] Figure 3(A) is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 3(B) and 3(C) are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 4] Figure 4(A) is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 4(B) and 4(C) are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 5] Figure 5(A) is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 5(B) and 5(C) are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 6] Figure 6(A) is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 6(B) and 6(C) are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 7] Figure 7(A) is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 7(B) and 7(C) are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 8] Figure 8(A) is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 8(B) and 8(C) are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 9]Figure 9(A) is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 9(B) and 9(C) are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 10] Figure 10(A) is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 10(B) and 10(C) are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 11] Figure 11(A) is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 11(B) and 11(C) are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 12] Figure 12(A) is a top view showing a method for manufacturing a semiconductor device according to one aspect of the present invention. Figures 12(B) and 12(C) are cross-sectional views showing a method for manufacturing a semiconductor device according to one aspect of the present invention. [Figure 13] Figure 13 is a top view illustrating a microwave processing apparatus according to one aspect of the present invention. [Figure 14] Figure 14 is a cross-sectional view illustrating a microwave processing apparatus according to one aspect of the present invention. [Figure 15] Figure 15 is a cross-sectional view illustrating a microwave processing apparatus according to one aspect of the present invention. [Figure 16] Figure 16 is a cross-sectional view showing the configuration of a storage device according to one aspect of the present invention. [Figure 17] Figure 17 is a cross-sectional view showing the configuration of a storage device according to one aspect of the present invention. [Figure 18] Figure 18(A) is a block diagram showing an example configuration of a storage device according to one aspect of the present invention. Figure 18(B) is a perspective view of a storage device according to one aspect of the present invention. [Figure 19] Figures 19(A) to 19(H) are circuit diagrams showing an example of the configuration of a storage device according to one aspect of the present invention. [Figure 20] Figure 20(A) is a block diagram of a semiconductor device according to one aspect of the present invention. Figure 29(B) is a schematic diagram of a semiconductor device according to one aspect of the present invention. [Figure 21]Figures 21(A) to 21(E) are schematic diagrams of a storage device according to one embodiment of the present invention. [Figure 22] Figures 22(A) to 22(F) show an electronic device according to one embodiment of the present invention. [Modes for carrying out the invention]

[0024] The embodiments will be described below with reference to the drawings. However, many embodiments are described. It can be implemented in different ways, without deviating from its purpose and scope. It will be readily apparent to those skilled in the art that the form and details can be varied in various ways. Therefore, the present invention shall not be construed as being limited to the contents described in the following embodiments.

[0025] Furthermore, in the drawings, the size, layer thickness, or area may be exaggerated for clarity. This may be the case. Therefore, it is not necessarily limited to that scale. Note that the drawing is an ideal This is a schematic example and is not limited to the shapes or values ​​shown in the diagram. For example, In the actual manufacturing process, processes such as etching can cause layers and resist masks to be altered as intended. Although there may be some reduction in volume, this is sometimes not reflected in the diagram for the sake of ease of understanding. In drawings, the same reference numeral is used for identical parts or parts having similar functions across different drawings. It is used in common, and explanations of its repetition may be omitted. Also, in cases where similar functions are referred to... In some cases, the hatch patterns are the same, and no specific designation is assigned.

[0026] Furthermore, especially in top views (also called "plan views") and perspective views, the invention is made easily understandable. Therefore, the description of some components may be omitted. Also, some hidden lines and other elements may be omitted. It may be omitted.

[0027] Furthermore, the ordinal numbers used in this specification, etc., as "1st," "2nd," etc., are used for convenience only. It does not indicate the order of processes or stacking order. Therefore, for example, "the first" should be written as "the second". This can be explained by appropriately replacing it with "of" or "the third of," etc. The ordinal numbers described herein do not correspond to the ordinal numbers used to specify one aspect of the present invention. There are cases where this is the case.

[0028] Furthermore, in this specification, phrases indicating placement such as "above" and "below" refer to the relative positions of the components. The positional relationships are used for convenience in explaining them by referring to the diagram. Also, the positions of the components are shown. The relationships change as appropriate depending on the direction in which each component is described. Therefore, in the specification... The terms explained are not limited to those used in the text; they can be appropriately rephrased depending on the context.

[0029] For example, in this specification, it is explicitly stated that X and Y are connected. In this case, X and Y are electrically connected, and X and Y are functionally connected. The cases disclosed in this specification, etc., include cases where X and Y are directly connected. Therefore, it is limited to predetermined connection relationships, for example, connection relationships shown in a diagram or text. Furthermore, connections other than those shown in the diagram or text are also disclosed in the diagram or text. It shall be considered as such.

[0030] Here, X and Y are objects (e.g., devices, elements, circuits, wiring, electrodes, terminals, conductive films, etc.) Let's assume it is a layer, etc.

[0031] Furthermore, the source and drain functions may differ when using transistors with different polarities, or when the circuit The direction of the current may change during operation, which can cause the current to switch positions. In detailed documents, the terms "source" and "drain" may be used interchangeably. ru.

[0032] In this specification, depending on the transistor structure, channel formation may actually occur. Channel width in the channel formation region (hereinafter also referred to as "effective channel width") (hereinafter referred to as "apparent channel") and the channel width shown in the top view of the transistor (hereinafter referred to as "apparent channel") The "gate width" (also called the "gate width") may differ from the "gate width" (or "gate width") of the semiconductor. For example, when the gate covers the side of the semiconductor. The effective channel width becomes larger than the apparent channel width, and this effect cannot be ignored. In some cases, it may disappear. For example, in transistors that are very small and whose gates cover the side of the semiconductor, In some cases, the proportion of channel formation regions formed on the side surface of the semiconductor can become large. Therefore, the effective channel width becomes larger than the apparent channel width.

[0033] In such cases, it can be difficult to estimate the effective channel width through actual measurements. For example, in order to estimate the effective channel width from the design value, the shape of the semiconductor is known. A certain assumption is necessary. Therefore, if the shape of the semiconductor is not precisely known, the effective It is difficult to accurately measure channel width.

[0034] In this specification, when simply referred to as "channel width," it refers to the apparent channel width. There is. Or, in this specification, when simply referred to as channel width, it means effective channel It can refer to width. Note that it can also refer to channel length, channel width, effective channel width, or apparent width. Channel width and other parameters can be determined by analyzing cross-sectional TEM images, etc. can.

[0035] Furthermore, semiconductor impurities refer to components other than the main components that make up the semiconductor, for example, concentrated Elements with a concentration of less than 0.1 atomic percent are considered impurities. The presence of impurities can, for example, lead to... High Density of States (DOS) of semiconductors and low crystallinity In some cases, such as the following may occur. If the semiconductor is an oxide semiconductor, the properties of the semiconductor may change. Examples of impurities that can be altered include Group 1 elements, Group 2 elements, Group 13 elements, and Group 14 elements. These include elements, Group 15 elements, and transition metals other than the main components of oxide semiconductors, for example, Examples include hydrogen, lithium, sodium, silicon, boron, phosphorus, carbon, and nitrogen. In the case of semiconductors, water can also function as an impurity. Also, in the case of oxide semiconductors, for example... In some cases, the presence of impurities can lead to the formation of oxygen vacancies. Also, if the semiconductor is silicon... In this case, impurities that alter the properties of semiconductors include, for example, Group 1 elements other than oxygen and hydrogen. These include Group 2 elements, Group 13 elements, Group 15 elements, and so on.

[0036] In this specification, silicon oxidnitride is defined as having a composition that contains more oxygen than nitrogen. It has a high content of [something]. Also, silicon nitride oxide, in terms of its composition, has more oxygen than [something]. It has a high nitrogen content.

[0037] Furthermore, in this specification, the term "insulator" shall be replaced with "insulating film" or "insulating layer." It is possible to replace the term "conductor" with "conductive film" or "conductive layer." This is possible. Also, the term "semiconductor" can be replaced with "semiconductor film" or "semiconductor layer." can.

[0038] Furthermore, in this specification, "parallel" means that two straight lines have an angle of -10 degrees or more and 10 degrees or less. This refers to a state where objects are arranged in degrees. Therefore, it also includes cases where the angle is between -5 degrees and 5 degrees. Furthermore, "approximately parallel" refers to a state where two straight lines are positioned at an angle of -30 degrees or more and 30 degrees or less. This refers to a straight line. Furthermore, "perpendicular" means that two straight lines are positioned at an angle of 80 degrees or more and 100 degrees or less. This refers to a state where something is perpendicular. Therefore, it also includes cases where the angle is between 85 degrees and 95 degrees. "A straight line" refers to a state in which two straight lines are positioned at an angle between 60 degrees and 120 degrees.

[0039] In this specification, a barrier film is defined as a film that suppresses the permeation of impurities such as water and hydrogen, as well as oxygen. A membrane that has a controlling function, and if the barrier membrane is conductive, it is called a conductive barrier. It is sometimes called the diaphragm.

[0040] In this specification, metal oxide refers to metal in a broad sense. It is an oxide. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). ), oxide semiconductor (also called Oxide Semiconductor or simply OS) They are classified into categories such as the following. For example, when a metal oxide is used in the semiconductor layer of a transistor, the gold Oxides are sometimes referred to as oxide semiconductors. That is, OS FETs or OS transistors. When referring to a transistor, it means a transistor having an oxide or oxide semiconductor. It can be rephrased.

[0041] Furthermore, in this specification, normally off means not applying a potential to the gate, or The current flowing through the transistor per 1 μm of channel width when the gate is given a ground potential. However, at room temperature, 1 × 10 -20 A or less, 1 × 10 at 85℃ -18 A or less, or 1 × 10 at 125℃ -16 This means being less than or equal to A.

[0042] (Embodiment 1) The following describes an example of a semiconductor device having a transistor 200 according to one aspect of the present invention, and I will now explain how to make bison.

[0043] <Example of semiconductor device configuration> Figures 1A, 1B, and 1C show a transistor 200 according to one aspect of the present invention, and These are top and cross-sectional views of the area around transistor 200.

[0044] Figure 1A is a top view of a semiconductor device having transistor 200. Also, Figure 1B, Figure 1C is a cross-sectional view of the semiconductor device. Here, Figure 1B is a cross-sectional view of Figure 1A along line A1-A2 This is a cross-sectional view of the area indicated by the dashed line, and is a cross-sectional view of transistor 200 in the channel length direction. There is also Figure 1C, which is a cross-sectional view of the area shown by the dashed line A3-A4 in Figure 1A. This is also a cross-sectional view of the Rangista 200 in the channel width direction. Note that in the top view of Figure 1A, the figure Some elements have been omitted for clarity.

[0045] A semiconductor device according to one aspect of the present invention comprises an insulator 212 on a substrate (not shown) and an insulator 212 The insulator 214 above, the transistor 200 on the insulator 214, and the transistor 200 above Insulator 280, insulator 282 on insulator 280, insulator 283 on insulator 282, It has an insulator 274 on an insulator 283 and an insulator 281 on an insulator 274. 212, insulator 214, insulator 280, insulator 282, insulator 283, insulator 274, o The insulator 281 functions as an interlayer film. It is also electrically connected to the transistor 200. It has a conductor 240 (conductor 240a and conductor 240b) that functions as a plug. In addition, an insulator 241 (insulator 2) is placed in contact with the side surface of the conductor 240 which functions as a plug. 41a and insulator 241b) are provided. Also, on the insulator 281 and conductor 2 Above 40 is a conductor 246 (conductor) which is electrically connected to the conductor 240 and functions as wiring. 246a and conductor 246b are provided.

[0046] Also, insulator 272, insulator 273, insulator 280, insulator 282, insulator 283, An insulator 241a is provided in contact with the inner wall of the opening of the edge 274 and the insulator 281, A first conductive material of the conductive material 240a is provided in contact with the side surface, and further inside is a conductive material 240a A second conductor is provided. In addition, insulators 272, 273, 280, and The edge body 282, insulator 283, insulator 274, and insulator 281 are in contact with the inner wall of the opening and An edge body 241b is provided, and a first conductor of the conductor 240b is provided in contact with its side surface. Further inside, a second conductor, conductor 240b, is provided. Here, conductor 240 The height of the top surface and the height of the top surface of the insulator 281 can be made to be approximately the same. So, in a configuration in which the first conductor and the second conductor of the conductor 240 are stacked... As shown, the present invention is not limited thereto. For example, the conductor 240 is single The structure may be configured as a layer, or as a laminated structure of three or more layers. In some cases, ordinal numbers are assigned to distinguish them based on their formation order.

[0047] [Transistor 200] As shown in Figure 1, the transistor 200 has an insulator 216 on an insulator 214 and an insulator Conductors 205 (conductors 205a and 2) are arranged to be embedded in 216. 05b) and the insulator 222 on the insulator 216 and the conductor 205, and on the insulator 222 The insulator 224, the oxide 230a on the insulator 224, and the oxide 23 on the oxide 230a 0b, oxide 243a on oxide 230b and oxide 243b, on oxide 243a Conductor 242a, conductor 242b on oxide 243b, and oxide on oxide 230b 230c, an insulator 250 on the oxide 230c, and an oxide 23 located on the insulator 250. The conductor 260 (conductor 260a and conductor 260b) overlapping with 0c, and the insulator 224 Part of the top surface, side of oxide 230a, side of oxide 230b, side of oxide 243a, Side view of oxide 243b, side view of conductor 242a, top view of conductor 242a, conductor 242b The side surface and the insulator 272 that is in contact with the upper surface of the conductor 242b, and the insulator on the insulator 272 It has 273 and, also, oxide 230c is on the side of oxide 243a, oxide 243b It is in contact with the side surface of the conductor 242a and the side surface of the conductor 242b, respectively. 60 has a conductor 260a and a conductor 260b, with the bottom and side of the conductor 260b The conductor 260a is positioned to enclose the conductor 260. Here, as shown in Figure 1B, the conductor 260 The upper surface is positioned to substantially coincide with the upper surface of the insulator 250 and the upper surface of the oxide 230c. Furthermore, the insulator 282 consists of the conductor 260, oxide 230c, insulator 250, and insulator 28 It touches the top surface of each of the zeros.

[0048] Also, insulators 212, 214, 222, 272, 273, The edge material 282 and the insulator 283 have a small amount of hydrogen (e.g., hydrogen atoms, hydrogen molecules, etc.). It is preferable that both have the function of suppressing diffusion. Also, insulator 212, insulator 21 4. Insulators 222, 272, 273, 282, and 283 are It has the function of suppressing the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable to do so. For example, insulator 222, insulator 272, insulator 273, insulator 282 , and insulator 283 are more resistant to oxygen and hydrogen than insulator 224, or to one or both. Low permeability is preferable. Insulator 212, Insulator 214, Insulator 222, Insulator 2 72, insulator 273, insulator 282, and insulator 283 are each more than insulator 250. It is preferable that the permeability of either or both oxygen and hydrogen is low. Insulator 212, Insulator Body 214, insulator 222, insulator 272, insulator 273, insulator 282, and insulator 2 83 has lower permeability to oxygen and hydrogen, or to one or both, than insulator 280. This is preferable.

[0049] As shown in Figure 1B, the insulator 272 is located on the top and side surfaces of the conductor 242a, and on the conductor 242b The top and sides of oxide 243a, the sides of oxide 243b, the sides of oxide 230a, It is preferable that it is in contact with the side surface of oxide 230b and the upper surface of insulator 224. It is preferable that the insulator 273 is provided in contact with the body 272. 280 is insulated by insulators 272 and 273, insulators 224 and oxide 23 It is separated from 0.

[0050] Furthermore, oxide 230 consists of oxide 230a on the insulator 224 and oxide 230a on the oxide 230a. Material 230b and a component placed on the oxide 230b, with at least a portion of it on the upper surface of the oxide 230b It is preferable to have the oxide 230c in contact with the material.

[0051] Furthermore, in transistor 200, in the channel formation region and its vicinity, oxide 23 This describes a configuration in which three layers are stacked: 0a, oxide 230b, and oxide 230c. However, the present invention is not limited thereto. For example, a single layer of oxide 230b, oxide 23 A two-layer structure of 0b and oxide 230a, a two-layer structure of oxide 230b and oxide 230c, or A configuration with four or more layers is also possible. For example, a two-layer structure of oxide 230c may be used. Furthermore, a configuration with a four-layer stacked structure may be used. Also, in transistor 200, the conductor Although 260 is shown as a two-layer laminated structure, the present invention is not limited thereto. For example, the conductor 260 may have a single-layer structure or a multilayer structure of three or more layers. .

[0052] Here, conductor 260 functions as the gate of the transistor, and conductor 242a and Conductors 242b function as either source or drain electrodes. In the 200, the conductor 260, which functions as a gate, is formed by an insulator 280 and the like. The conductor 260 is formed in a self-aligning manner to fill the opening. This aligns the conductor 260 to the region between the conductor 242a and the conductor 242b. It can be positioned reliably without any problems.

[0053] Furthermore, transistor 200 is made of oxide 230 (oxide 230a) which includes a channel formation region. Metal oxides (oxide 230b and oxide 230c) function as oxide semiconductors. It is preferable to use an oxide semiconductor (hereinafter also referred to as an oxide semiconductor). For example, as an oxide semiconductor A functional metal oxide has an energy gap of 2 eV or more, preferably 2.5 eV or more. It is preferable to use a material. Thus, using a metal oxide with a large energy gap By doing so, the leakage current (off-current) of transistor 200 in the non-conductive state is extremely low. It can be made smaller. By using such transistors, low-power semiconductors can be produced. We can provide the equipment.

[0054] For example, as oxide 230, In-M-Zn oxide (where element M is aluminum, galvanic acid) Umium, yttrium, tin, copper, vanadium, beryllium, boron, titanium, iron, nickel Germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium One or more types selected from luminous, tantalum, tungsten, or magnesium. It is preferable to use metal oxides such as ) . In particular, element M can be aluminum, gallium, yttrium It is preferable to use um or tin. Also, as oxide 230, In-M oxide and In-Z n oxide or M-Zn oxide may also be used.

[0055] Oxide 230 consists of oxide 230a, oxide 230b on oxide 230a, and oxide 2 It has oxide 230c on 30b, and oxide 230a below oxide 230b. Therefore, impurities are transferred from the structure formed below oxide 230a to oxide 230b. Diffusion can be suppressed. Also, by having oxide 230c on oxide 230b , diffusion of impurities from structures formed above oxide 230c to oxide 230b It can be suppressed.

[0056] Furthermore, oxide 230 has a layered structure due to oxides with different atomic ratios of each metal atom. It is preferable that the metal oxide used in oxide 230a contains constituent elements The atomic ratio of element M in the oxide is the element of the constituent elements in the metal oxide used in oxide 230b. It is preferable that the ratio is greater than the atomic ratio of element M. Also, the metal oxide used in oxide 230a In this case, the atomic ratio of element M to In is in the metal oxide used in oxide 230b. Furthermore, it is preferable that the atomic ratio of element M to In is greater than that of In. Also, in oxide 230b In the metal oxide used, the atomic ratio of In to element M is used in oxide 230a. It is preferable that the atomic ratio of In to element M in the metal oxide is greater than that of In. Oxide 230c is a metal oxide that can be used in the case of oxide 230a or oxide 230b. The object can be used.

[0057] Specifically, for oxide 230a, In:Ga:Zn = 1:3:4 [atomic ratio], Alternatively, a metal oxide in an atomic ratio of 1:1:0.5 may be used. Also, oxide 230b and Then, gold in an atomic ratio of In:Ga:Zn = 4:2:3 or 1:1:1. A group oxide can be used. Also, for oxide 230c, In:Ga:Zn = 1:3:4 [Atomic ratio], Ga:Zn=2:1 [Atomic ratio], or Ga:Zn=2:5 [Atomic ratio] You can use the metal oxide of ]. Also, a specific example of when oxide 230c is used in a layered structure and For example, In:Ga:Zn=4:2:3 [atomic ratio] and In:Ga:Zn=1:3:4 Layered structures with [atomic ratio] Ga:Zn=2:1 [atomic ratio] and In:Ga:Zn=4 Stacked structure with :2:3 [atomic ratio], Ga:Zn=2:5 [atomic ratio], and In:Ga: Layered structure of Zn=4:2:3 [atomic ratio], gallium oxide, and In:Ga:Zn=4: Examples include layered structures with an atomic ratio of 2:3.

[0058] Furthermore, it is preferable that the oxide 230b is crystalline. For example, CAAC, which will be described later. -OS(c-axis aligned crystalline oxide sem It is preferable to use an iconductor. Oxides have few impurities or defects (such as oxygen vacancies), are highly crystalline, and have a dense structure. Therefore, the oxygen is drawn from oxide 230b by the source electrode or drain electrode. This suppresses the removal of oxygen from oxide 230b. As a result, even after heat treatment, oxygen can be removed from oxide 230b. Because the risk of being pulled out is reduced, transistor 200 is less likely to be affected by high temperatures during the manufacturing process. It is stable against the temperature (the so-called thermal budget).

[0059] Furthermore, the energy at the lower end of the conduction band of oxide 230a and oxide 230c is that of oxide 23 It is preferable that the energy is higher than the energy at the lower end of the conduction band at 0b. In other words, oxidation The electron affinity of material 230a and oxide 230c is smaller than the electron affinity of oxide 230b. It is preferable.

[0060] Here, the electron affinity or energy level Ec at the bottom of the conduction band is the same as the vacuum level and the valence band. The ionization potential Ip is the difference between the end energy Ev and the energy gap Eg. The ionization potential Ip can be determined, for example, by ultraviolet photoelectron spectroscopy. (UPS:Ultraviolet Photoelectron Spectrosc The energy gap Eg can be measured using a spectroscopic instrument. It can be measured using an ellipsometer.

[0061] Furthermore, at the joint of oxide 230a, oxide 230b, and oxide 230c, The energy levels at the lower end of the guide band change smoothly. In other words, oxide 230a, oxide The energy levels at the lower end of the conduction band at the junction of 230b and oxide 230c are continuous. It can also be said that it undergoes a gradual change or continuous bonding. In order to do this, oxide 2 At the interface between 30a and oxide 230b, and at the interface between oxide 230b and oxide 230c It is desirable to lower the defect level density of the mixed layer that is formed.

[0062] Furthermore, the primary carrier pathway is oxide 230b. Oxide 230a, oxide 230 By configuring c as described above, the interface between oxide 230a and oxide 230b, and the oxide The defect level density at the interface between 230b and oxide 230c can be reduced. Therefore, the influence of interfacial scattering on carrier conduction is reduced, and transistor 200 has high o This allows for obtaining high current and high frequency characteristics.

[0063] Transistors using oxide semiconductors have a high concentration of donor regions in the channel formation area of ​​the oxide semiconductor. As the degree increases, the carrier concentration becomes extremely large in response to the increase in gate voltage, and normally It becomes more prone to ion characteristics. The donor in oxide semiconductors is mainly oxygen in oxide semiconductors. Missing (V) O(Also called an oxygen vacancy) is formed when hydrogen is captured. In the following, hydrogen trapped in an oxygen deficiency is referred to as V. O It is sometimes referred to as H.

[0064] Furthermore, V is a physical quantity related to the donor concentration in oxide semiconductors. O To quantitatively evaluate H This is difficult. Therefore, oxide semiconductors are evaluated by carrier concentration rather than donor concentration. This may occur. Therefore, in this specification, the donor concentration is used as a parameter for oxide semiconductors. In some cases, carrier concentrations are used that assume a state where no electric field is applied, rather than degrees. Therefore, the term "carrier concentration" as used in this specification can be rephrased as "donor concentration." There are cases where this is the case.

[0065] Furthermore, hydrogen in oxide semiconductors reacts with oxygen bonded to metal atoms to form water, and oxygen This can lead to the formation of defects. This increases the amount of oxygen vacancies in the oxide semiconductor, and V O There is a risk of an increase in H. Also, hydrogen in oxide semiconductors is affected by heat, electric fields, etc. Because it is easily moved by tracing, when an oxide semiconductor contains a lot of hydrogen, it becomes a transistor. This could also lead to a deterioration in its reliability.

[0066] Thus, when the hydrogen concentration in an oxide semiconductor increases, the transistor becomes normally ohm This makes it easier to achieve good characteristics and construct a semiconductor device with good electrical properties and reliability. It will become impossible.

[0067] Therefore, when using metal oxides in oxide 230, the amount of hydrogen in the metal oxide should be kept as low as possible. It is preferable that the amount is reduced. Specifically, in metal oxides, secondary ion mass spectrometry (SIMS: Secondary Ion Mass Spectrometry) to obtain a hydrogen concentration of 1×10 20 atoms / cm 3 less than, preferably 1×10 19 atoms / cm 3 less than, more preferably 5×10 18 atoms / cm 3 less than, and further preferably 1×10 18 atoms / cm 3 less than. By using a metal oxide with sufficiently reduced impurities such as hydrogen in the channel formation region of the transistor, stable electrical characteristics can be imparted.

[0068] Also, when a metal oxide is used for the oxide 230, the carrier concentration of the metal oxide semiconductor functioning as the channel formation region is preferably 1×10 18 cm -3 or less, more preferably less than 1× 10 17 cm -3 less than, even more preferably less than 1×10 16 cm -3 less than is even more preferably less than 1×10 13 cm -3 less than, and even more preferably less than 1×10 1 2 cm -3 less than. Note that there is no particular limitation on the lower limit value of the carrier concentration of the metal oxide functioning as the channel formation region. For example, it can be 1×10 -9 cm -3 or the like.

[0069] However, as the process after forming the metal oxide progresses, hydrogen diffuses into the metal oxide There are cases where this occurs. For example, an insulator 2 that is in contact with oxide 230 and functions as a gate insulator. When depositing film 50, a deposition gas containing hydrogen may be used. There is a high probability that the contained hydrogen will diffuse into oxide 230.

[0070] For example, hydrogen is present in the atmosphere during the deposition of the insulator 250, or in the deposited insulator 250. Impurities such as nitrogen and carbon are present. In particular, impurities bonded to silicon atoms are Since it is necessary to break the bond between the impurity atoms and the silicon atoms, removal by heat treatment is required. difficult.

[0071] Therefore, after forming an insulator 250 on the oxide 230, in an oxygen-containing atmosphere, Microwave processing should be performed under reduced pressure. By performing microwave processing, the microphone The electric field due to the wave is applied to the insulator 250 and the oxide 230, and in the insulator 250, The VoH in oxide 230 can be separated into Vo and hydrogen. The water that is separated at this time Some of the elements combine with oxygen to form H2O, which is then removed from the insulator 250 and oxide 230. In some cases, this may occur. Also, some of the hydrogen may be gettered by the conductor 242. In this way, by performing microwave treatment, hydrogen in the insulator 250 and oxide 230 The concentration can be reduced. Also, VoH in oxide 230 is separated into Vo and hydrogen. The subsequent supply of oxygen to any existing Vo can repair or replenish it.

[0072] Alternatively, heat treatment may be performed while maintaining a reduced pressure state after microwave treatment. By performing this treatment, hydrogen is efficiently removed from the insulator 250 and the oxide 230. Alternatively, the microwave treatment can be performed while maintaining a reduced pressure state. The step may be repeated multiple times. For example, microwave processing for 10 seconds or more, 300 seconds After performing the procedure for less than a second, preferably 30 to 60 seconds, maintain the reduced pressure for 30 seconds or more. The step of performing a heat treatment for a time of 3000 seconds or less, preferably 300 seconds or close to that time. This can be done 2 to 10 times. By repeatedly performing the heat treatment, the insulator 250 and Hydrogen in oxide 230 can be removed even more efficiently. The heat treatment temperature is as follows: It is preferable to use a temperature between 300°C and 500°C.

[0073] Furthermore, by performing microwave treatment, the film quality of the insulator 250 is modified, and hydrogen This can suppress the diffusion of water or impurities. Therefore, the conductive material 260 Hydrogen is released through the insulator 250 by post-processing such as film deposition or post-treatment such as heat treatment. This can suppress the diffusion of water or impurities into the oxide 230.

[0074] For example, the bond energy between a hydrogen atom and a silicon atom in solid silicon oxide is 3. 3 eV, the bond energy between a carbon atom and a silicon atom is 3.4 eV, the bond energy between a nitrogen atom and a silicon atom The bond energy of this atom is 3.5 eV. Therefore, the hydrogen atom bonded to the silicon atom To remove them, you need radicals or ions with an energy of at least 3.3 eV. By causing it to collide with the bond between the hydrogen atom and the silicon atom, the hydrogen atom and the silicon atom The bond with it can be broken.

[0075] Furthermore, the same applies to nitrogen and other impurities such as carbon, at least the bond energy Radicals or ions with energy greater than the energy of the silicon atom are formed by impurity atoms and silicon atoms. By causing a collision with the bonding area, the bond between the impurity atom and the silicon atom can be broken. ru.

[0076] Here, radicals and ions generated by microwave-excited plasma are considered as , the ground state of oxygen atom radical O( 3 P), the first excited state of the oxygen atom radical O( 1 D) , and monovalent cations of oxygen molecules such as O2+. 3 The energy of P is 2.4 2eV, O( 1 The energy of D) is 4.6 eV. Also, O 2 + indicates that it has an electric charge. Therefore, the potential distribution in the plasma, and the bias, accelerate the energy, so the energy is unique. It is not fixed, but at least with internal energy alone, O( 1 D) Higher energy It has.

[0077] In other words, O( 1 D), and radicals such as O2+, and ions in insulator 250 Break the bonds between hydrogen, nitrogen, and carbon atoms and silicon atoms, and bond them to silicon atoms. It can remove hydrogen, nitrogen, and carbon. Also, microwave-excited plasma treatment. When this process is carried out, the thermal energy applied to the substrate also contributes to the formation of hydrogen, nitrogen, and carbon. The amount of pure matter can be reduced.

[0078] On the other hand, O( 3 P) has low reactivity, so it does not react with insulator 250 and does not spread deep into the film. To scatter. Or, O( 3 P) reaches oxide 230 via insulator 250, It diffuses into 230. O( 3 P) in an oxygen deficiency containing hydrogen When in close proximity, hydrogen in the oxygen vacancy is released from the oxygen vacancy, and instead O( 3 P) Oxygen deficiency By entering, the oxygen deficiency is compensated. Therefore, in oxide 230, the electrons, which are carriers, This can suppress the generation of [unclear].

[0079] Furthermore, O( 3 The proportion of P) is under high pressure conditions By performing microwave processing, it increases. To compensate for the oxygen deficiency in oxide 230. For the sake of, O( 3 A higher proportion of P) is preferable. Therefore, microwave processing is performed at a pressure of 13 It is preferable to perform the test at 3 Pa or higher, preferably 200 Pa or higher, and even more preferably 400 Pa or higher. Furthermore, the oxygen flow rate ratio (O2 / O2+Ar) should be 50% or less, preferably 10% to 30%. It is best to do it below.

[0080] As described above, V functions as a donor in metal oxides. O H can be reduced. Therefore, the carrier concentration of the metal oxide that functions as a channel-forming region is set to 1.0 × 10⁻⁶. 18 / cm 3 The following is preferably 1.0 × 10 17 / cm 3 Less than 1.0 × 10 16 / cm 3 Less than 1.0 × 10 13 / cm 3 Less than, more preferably 1.0 × 10 12 / cm 3 It can be set to less than. Furthermore, the channel formation region is a mechanism There are no particular limitations on the lower limit of the carrier concentration of the metal oxide that can perform the function, but for example, 1× 10 -9 cm -3 This can be done by using such a metal oxide as a channel-forming region. The transistor used can be made normally off, providing good electrical characteristics and reliability. A reliable semiconductor device can be constructed.

[0081] Furthermore, hydrogen may diffuse into the metal oxide as the metal oxide undergoes post-film deposition processes. For example, when forming an insulator 280 that functions as an interlayer film, hydrogen is included. In some cases, a film-forming gas is used. Hydrogen contained in the film-forming gas diffuses into oxide 230. There is a high probability that this will happen.

[0082] For example, hydrogen is present in the atmosphere during the deposition of the insulator 280, or in the deposited insulator 280. Impurities such as nitrogen and carbon are present. In particular, impurities bonded to silicon atoms. The material requires the bond between impurity atoms and silicon atoms to be broken, which is done by heat treatment. Removal is difficult.

[0083] Therefore, an insulator 282 is formed on the insulator 280, and an insulator 283 is formed on the insulator 282. After film formation, microwave treatment may be performed in an oxygen-containing atmosphere and under reduced pressure. By performing microwave treatment, the electric field induced by microwaves is applied to the insulator 280 and the oxide. It is given to 230, and the VoH in the insulator 280 and oxide 230 is separated into Vo and hydrogen. This can be done. At this time, some of the separated hydrogen combines with the oxygen present in the insulator 280 to form H It may be removed as 2O. Also, some of the hydrogen is absorbed by insulator 272 and insulator 2 In some cases, the conductor 242 may be gettered via 73. In this way, microwave processing By performing this process, the hydrogen concentration in the insulator 280 and the oxide 230 can be reduced. Furthermore, after the VoH in oxide 230 is separated into Vo and hydrogen, oxygen may be added to the Vo that may be present. By supplying this, the Vo can be repaired or compensated for.

[0084] Alternatively, heat treatment may be performed while maintaining a reduced pressure state after microwave treatment. By performing this treatment, hydrogen is efficiently removed from the insulator 280 and the oxide 230. It is possible to perform heat treatment while maintaining a reduced pressure state after microwave treatment. The steps may be repeated multiple times. For example, microwave processing for 10 seconds to 300 seconds. Preferably, after performing the following steps for 30 seconds to 60 seconds, maintain the reduced pressure state for 30 seconds or more. Less than 0 seconds, preferably 30 seconds or more and 300 seconds or less, preferably 300 seconds or near that time The step of performing a heat treatment for a set amount of time may be repeated 2 to 10 times. Repeat the heat treatment. This allows for more efficient removal of hydrogen from the insulator 280 and oxide 230. It is possible to do this. Furthermore, the heat treatment temperature is preferably between 300°C and 500°C.

[0085] Furthermore, by performing microwave treatment, the film quality of the insulator 280 is modified, and hydrogen Therefore, the diffusion of water or impurities can be suppressed. In subsequent processes, such as heat treatment, hydrogen, water, or impurities may enter through the insulator 280. This can suppress diffusion into the oxide 230. Furthermore, a barrier can be formed on the insulator 280. By arranging insulators 282 and 283, which function as insulating films, hydrogen can be filtered in from the outside. This is preferable because it can suppress the intrusion of water or impurities into the transistor 200. The following explanation is the same as the microwave treatment performed after the deposition of the insulator 250, and the insulator 250 It can be replaced with insulator 280.

[0086] Furthermore, an insulating film that will become the insulator 280 is formed, and for example, CMP treatment (Chemical Chemical Processing) is performed. By performing processes such as mechanical polishing, the surface of the insulator 28 becomes flat. Even after forming 0, microwave treatment is performed in an oxygen-containing atmosphere and under reduced pressure. Good. By performing microwave treatment, the electric field produced by the microwaves is applied to the insulator 280 and acid The oxide 230 is given, and the VoH in the insulator 280 and oxide 230 is separated into Vo and hydrogen. It can be interrupted. At this time, some of the interrupted hydrogen combines with the oxygen present in the insulator 280. It may be removed as H2O. Also, some of the hydrogen is absorbed by insulator 272 and the insulator The conductor 242 may be gettered via the edge 273.

[0087] Alternatively, an insulating film that will become an insulator 280 can be formed and then treated with, for example, CMP (Chemical Polishing) to create the surface. After forming an insulator 280 with a flat surface, a sputtering method is applied to the insulator 280. Using an oxygen-containing atmosphere, for example, after depositing an aluminum oxide film, Microwave processing may be performed under ambient air and reduced pressure. As a result, an electric field due to microwaves is applied to the insulator 280 and the oxide 230, and the insulator 2 In 80 and oxide 230, VoH can be separated into Vo and hydrogen. A portion of the hydrogen released combines with the oxygen injected into the insulator 280 during the aluminum oxide film formation process. It is converted to H2O and accumulates at and near the interface between the insulator 280 and aluminum oxide. In some cases, the aluminum oxide on the insulator 280 is then treated, for example, by CMP (Chemical Polishing). By removing it, the deposits accumulated at and near the interface between the insulator 280 and aluminum oxide H2O can be removed. Also, some of the hydrogen is absorbed by insulator 272 and insulator 27 In some cases, the conductor 242 may be gettered via 3. In this way, microwave processing By doing so, the hydrogen concentration in the insulator 280 and the oxide 230 can be reduced. Furthermore, after the VoH in oxide 230 is separated into Vo and hydrogen, oxygen may be present in the Vo. By supplying it, the Vo can be repaired or supplemented.

[0088] Alternatively, heat treatment may be performed while maintaining a reduced pressure state after microwave treatment. By performing this treatment, hydrogen is efficiently removed from the insulator 280 and the oxide 230. It is possible to perform heat treatment while maintaining a reduced pressure state after microwave treatment. The steps may be repeated multiple times. For example, microwave processing for 10 seconds to 300 seconds. Preferably, after performing the following steps for 30 to 60 seconds, maintain the reduced pressure for 30 seconds or more. The step of performing a heat treatment for 0 seconds or less, preferably 300 seconds or close to that duration, is repeated twice. This can be repeated up to 10 times. By repeatedly performing the heat treatment, the insulator 280 and oxide 2 This allows for even more efficient removal of hydrogen from the 30. The heat treatment temperature is 300°C. It is preferable to keep the temperature below 500°C.

[0089] Furthermore, by performing microwave treatment, the film quality of the insulator 280 is modified, and hydrogen , diffusion of water, impurities, etc. can be suppressed. Therefore, after the formation of the insulator 280 In subsequent processes or heat treatment, hydrogen, water, or impurities can be prevented from diffusing into the oxide 230 through the insulator 280. The following description is the same as the microwave treatment performed after the formation of the insulator 250, and the insulator 250 may be replaced with the insulator 280 ..

[0090] Also, as shown in FIG. 1B, an oxide 243 ( oxides 243a and 243b) may be disposed between the oxide 230b and the conductor 242 (conductors 242a and 242b) functioning as a source electrode or a drain electrode. Since the conductor 242 is not in contact with the oxide 23 0, absorption of oxygen in the oxide 230 by the conductor 242 can be suppressed. That is, by preventing oxidation of the conductor 242, a decrease in the conductivity of the conductor 242 can be suppressed. Therefore, the oxide 243 preferably has a function of suppressing oxidation of the conductor 242 .. ..

[0091] Therefore, the oxide 243 preferably has a function of suppressing oxygen permeation. By disposing an oxide 243 having a function of suppressing oxygen permeation between the conductor 242 functioning as a source electrode or a drain electrode and the oxide 230b, the electrical resistance between the conductor 242 and the oxide 230b is reduced, which is preferable. With such a configuration, the electrical characteristics and reliability of the transistor 200 can be improved. .. .. .. ..

[0092] As the oxide 243, a metal oxide containing an element M may be used. In particular, the element M may be aluminum, gallium, yttrium, or tin. The oxide 243 is an oxide ..​ It is preferable that the concentration of element M is higher than that of substance 230b. Also, as oxide 243, Gallium may be used. Alternatively, metal acids such as In-M-Zn oxide may be used as oxide 243. A compound may also be used. Specifically, in the metal oxide used in oxide 243, with respect to In The atomic ratio of element M in oxide 230b is the element relative to In in the metal oxide used in oxide 230b. It is preferable that the atomic ratio is greater than that of element M. Also, the film thickness of oxide 243 is 0.5 nm or less. Preferably, the wavelength is 5 nm or less, and more preferably 1 nm to 3 nm. Also, oxide It is preferable that 243 is crystalline. If oxide 243 is crystalline, oxide 23 The release of oxygen in 0 can be effectively suppressed. For example, as oxide 243, hexagonal In the case of crystalline structures such as crystals, it may be possible to suppress the release of oxygen from oxide 230.

[0093] Note that oxide 243 is not necessarily required. For example, if oxide 230b contains conductor 2 Even if 42 is in contact, oxidation of conductor 242 is suppressed, and if the conductivity is sufficiently high, oxide 2 Without providing 43, conductors 242a and 242b are provided in contact with the oxide 230b. That's good too.

[0094] Furthermore, the conductor 242 (conductor 242a and conductor 242b) and the oxide 230 are in contact. or conductor 242 (conductor 242a and conductor 242b) and oxide 243 ( When oxide 243a and oxide 243b) come into contact, oxide 230, or oxidation Oxygen in substance 243 may diffuse into conductor 242, causing oxidation of conductor 242. There is a high probability that the conductivity of conductor 242 will decrease when 242 is oxidized. The oxygen in 230, or the oxygen in oxide 243, diffuses into the conductor 242. 242 absorbs oxygen in oxide 230, or conductor 242 absorbs oxygen in oxide 243 This can be rephrased as absorbing it.

[0095] Furthermore, oxygen in oxide 230 or oxide 243 diffuses into conductor 242, A different layer is formed between the conductive material 242 and the oxide 230, or between the conductive material 242 and the oxide 243. This may occur. The heterogeneous layer contains more oxygen than conductor 242, and therefore has insulating properties. It is presumed that at this time, the conductor 242, the heterolayer, and the oxide 230 (or oxide The three-layer structure of material 243) can be considered as a three-layer structure consisting of metal-insulator-semiconductor. This is called the MIS (Metal-Insulator-Semiconductor) structure. It is sometimes referred to as a diode junction structure primarily composed of MIS structures.

[0096] A transistor 200 in one aspect of the present invention, as shown in Figures 1B and 1C, has an insulator 2 The structure is such that 82 and the insulator 250 are in direct contact. Therefore, the oxygen contained in the insulator 280 is less likely to be absorbed by the conductor 260. Consequently, the insulator 2 The oxygen contained in 80 is transferred to oxides 230a and 230b via oxide 230c. Since it can be efficiently supplied to, oxygen in oxide 230a and oxide 230b This reduces defects and improves the electrical characteristics and reliability of transistor 200. Furthermore, it prevents impurities such as hydrogen contained in the insulator 280 from mixing into the insulator 250. This allows us to suppress adverse effects on the electrical characteristics and reliability of transistor 200. It is possible. As the insulator 282, silicon nitride, silicon oxynitride, aluminum oxide, or hafnium oxide can be used.

[0097] The insulator 272 and the insulator 273 preferably have a function of suppressing the permeation of impurities such as hydrogen and water and oxygen.

[0098] FIG. 2A is an enlarged view of a cross-section of a portion indicated by a one-dot chain line A5-A6 in FIG. 1A, and is also a cross-sectional view in the channel width direction of the source region or the drain region of the transistor 200. As shown in FIG. 2A, the upper surface of the conductor 242b, the side surface of the conductor 242b, the side surface of the oxide 243b, the side surface of the oxide 230a, and the side surface of the oxide 230b are covered with the insulator 272 and the insulator 273, so that the diffusion of impurities such as hydrogen and water and oxygen into the conductor 242b from the side surface and the upper surface directions of the conductor 242b can be suppressed. Further, the lower surface of the conductor 242b has a structure in contact with the oxide 243b, and the oxygen of the oxide 230b is blocked by the oxide 243b, so that the diffusion into the conductor 242b is suppressed. Therefore, the diffusion of oxygen from the periphery of the conductor 242b into the conductor 242b can be suppressed, and thus the A silicon oxide film or a silicon nitride film can be used. Also, the insulator 273 and For example, aluminum oxide or hafnium oxide can be used.

[0099] Figure 2B is an enlarged view of the right half of transistor 200 in Figure 1B. Conductor 240b The left side (the area enclosed by the dotted line in Figure 2B) is in contact with oxide 230c, and insulator 2 This suppresses the diffusion of impurities such as hydrogen and water from 50, as well as oxygen, into the conductor 242b. It is possible. Also, the right side of the conductor 242b is in contact with the insulator 272, and insulation The diffusion of impurities such as hydrogen and water from body 280, as well as oxygen, into conductor 242b is suppressed. This is possible. Furthermore, the conductor 242a also exhibits a similar effect.

[0100] As described above, the permeability of impurities such as hydrogen and water, as well as oxygen, around the conductor 242 is suppressed. The structure is enclosed by a functional insulator 272, oxide 230c, and oxide 243b. This suppresses oxidation of the conductor 242, improving the electrical characteristics of the transistor 200 and the transistor This can improve the reliability of the Zista 200.

[0101] Furthermore, as shown in Figure 1C, the oxide 230a and In the region where the oxide 230b and the conductor 260 do not overlap, the height of the bottom surface of the conductor 260 It is preferable that the element is positioned lower than the height of the bottom surface of oxide 230b. , the bottom surface of the conductor 260 in the region where the oxide 230b and the conductor 260 do not overlap. The difference between the height and the height of the bottom surface of oxide 230b is preferably 0 nm or more and 100 nm or less. The wavelength is 3 nm to 50 nm, more preferably 5 nm to 20 nm.

[0102] Thus, the conductor 260, which functions as a gate, is the oxide 230 in the channel formation region. The sides and top surface of b are covered with oxide 230c and insulator 250. This makes it easier to apply the electric field of the conductor 260 to the entire oxide 230b in the channel formation region. Therefore, the on-current of transistor 200 can be increased, improving the frequency characteristics. ru.

[0103] Based on the above, a semiconductor device having normally-off electrical characteristics can be provided. Alternatively, it suppresses fluctuations in electrical characteristics, provides stable electrical characteristics, and improves reliability. A semiconductor device can be provided that has a transistor with a large on-current. A conductive device can be provided. Or, a device having a transistor with high frequency characteristics can be provided. A semiconductor device can be provided that has a transistor with a small off-current. We can provide semiconductor devices.

[0104] The following describes the detailed configuration of a semiconductor device having a transistor 200 according to one aspect of the present invention. I will explain this.

[0105] The conductor 205 is arranged to overlap with the oxide 230 and the conductor 260. The conductor 205 is preferably embedded in the insulators 214 and 216. stomach.

[0106] Here, the conductor 260 functions as the first gate (also called the top gate) electrode. In some cases, the conductor 205 is used as the second gate (also called the bottom gate) electrode. It may work. In that case, the potential applied to conductor 205 is applied to conductor 260. By changing the potential independently, without being linked to it, the Vth of transistor 200 is controlled. This is possible. In particular, by applying a negative potential to the conductor 205, a transistor can be formed. By making Vth greater than 0V, it becomes possible to reduce the off-current. Therefore, Applying a negative potential to the conductor 205 results in a greater effect on the conductor 260 than not applying a negative potential. The drain current can be reduced when the applied potential is 0V.

[0107] Furthermore, as shown in Figure 1A, the conductor 205 is made of the conductor 242a of oxide 230 and conductor It is preferable to provide a larger area than the area that does not overlap with the electric body 242b. In particular, as shown in Figure 1C Thus, the conductor 205 extends beyond the edge that intersects the channel width direction of the oxide 230. In the region as well, elongation is preferable. That is, in the channel width direction of the oxide 230. On the outer side of the side, the conductor 205 and the conductor 260 are superimposed with an insulator in between. It is preferable that the conductor 205 be made larger. Alternatively, by making the conductor 20 5. In the plasma processing of the fabrication process after formation, local charging (char In some cases, it may be possible to alleviate the effects of (called "ji-up"). However, one aspect of the present invention is not limited thereto. No. Conductor 205 is located at least between conductor 242a and conductor 242b. It should be superimposed with oxide 230.

[0108] With the above configuration, the electric field of the conductor 260 which functions as the first gate, The electric field of the conductor 205, which functions as a second gate, electrifies the channel formation region. It can be surrounded by air. In this specification, the first gate and the second gate The structure of the transistor, in which the channel formation region is electrically surrounded by an electric field, is called a surro This is called an underdated channel (S-channel) structure. Also, in this specification, etc. Furthermore, the S-channel structure is a conductor that functions as both a source electrode and a drain electrode. The side surface and periphery of oxide 243a in contact with 242a are type I, just like the channel-forming region. It has the following characteristics. In addition, it has two conductors that function as source and drain electrodes. The sides and periphery of oxide 243b in contact with 42b are type I, just like the channel-forming region. It has the following characteristics. In addition, the sides and periphery of the oxide 243a in contact with the conductor 242a are Because it is in contact with the insulator 272, it can become type I, similar to the channel formation region. The sides and periphery of the oxide 243b that are in contact with the electric body 242b are in contact with the insulator 272. Similar to the channel-forming region, it can be type I. Note that in this specification, type I is defined as follows: It can be treated similarly to high-purity genuine. Furthermore, the S-ch disclosed in this specification, etc. The annel structure is different from the fin-type structure and the planar-type structure. By adopting this design, resistance to short-channel effects is increased, or in other words, short-channel effects This allows for the creation of transistors that are less prone to generating certain problems.

[0109] Furthermore, the conductive material 205a suppresses the permeation of impurities such as water or hydrogen and oxygen. A body material is preferred. For example, titanium, titanium nitride, tantalum, or tantalum nitride can be used. This is possible. Also, the conductor 205b is mainly composed of tungsten, copper, or aluminum. It is preferable to use a conductive material such as the above. Note that although the conductive material 205 is shown as two layers, 3 A multilayer structure with more than one layer is also acceptable.

[0110] Here, an oxide semiconductor, an insulator or conductor located beneath the oxide semiconductor, and an acid A different film is used to separate an insulator or conductor located on the upper layer of a semiconductor without opening it to the atmosphere. By continuously depositing seeds into a film, the concentration of impurities (especially hydrogen and water) is reduced, resulting in a substantially high-purity product. This is preferable because it allows for the formation of highly intrinsic oxide semiconductor films.

[0111] For example, using a film deposition apparatus having six processing chambers, an insulator 216 and a conductive An insulating film, an oxide 230a, and an insulating film, which will be an insulator 222 and an insulating film 224, will be placed on the body 205. An oxide film that becomes oxide 230b, an oxide film that becomes oxide 243, and a conductor 2 The conductive films that result in a 42 ratio should be deposited in sequence.

[0112] Insulator 212, Insulator 214, Insulator 272, Insulator 273, Insulator 282, Insulator 2 83 and the insulator 281 are protected from impurities such as water or hydrogen from the substrate side or from above. It is preferable that it functions as a barrier insulating film to suppress contamination of transistor 200. Therefore, insulator 212, insulator 214, insulator 272, insulator 273, insulator 2 82. Insulators 283 and 281 contain hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, and nitrogen It suppresses the diffusion of impurities such as elementary molecules, nitrogen oxide molecules (N2O, NO, NO2, etc.), and copper atoms. It is preferable to use an insulating material that has the function of (making it difficult for the above-mentioned impurities to permeate). Alternatively, it may have a function that inhibits the diffusion of oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable to use an insulating material that has properties (that makes it difficult for the above-mentioned oxygen to permeate).

[0113] For example, silicon nitride may be used as the insulator 212, insulator 283, and insulator 281. Using this, insulators 214, 272, 273, and 283 are oxidized. It is preferable to use aluminum or similar materials. This prevents impurities such as water or hydrogen from being absorbed. The material diffuses from the substrate side to the transistor 200 side via the edge 212 and the insulator 214. This can be suppressed. Alternatively, oxygen contained in the insulator 224, etc., insulator 212 , and diffusion to the substrate side via the insulator 214 can be suppressed. Or an insulator 280 in which impurities such as hydrogen are located above the insulator 273, and This suppresses diffusion from the conductor 246 and other materials to the transistor 200 side via the insulator 273. This can be done. In this way, transistor 200 can be treated with impurities such as water or hydrogen, and Insulators 212, 214, and 272, which have the function of suppressing the diffusion of oxygen, It is preferable to have a structure in which the body 273 is surrounded by the insulator 282 and the insulator 283.

[0114] Furthermore, it is preferable to lower the resistivity of insulators 212, 283, and 281. There are cases where this is difficult. For example, the resistivity of insulators 212, 283, and 281. Approximately 1 × 10 13 By setting it to Ωcm, processing using plasma, etc. in semiconductor device manufacturing processes. In this, insulator 212, insulator 283, and insulator 281 are conductor 205, conductor It may be possible to mitigate the charge-up of 242 or conductor 260. Insulator The resistivity of insulators 212, 283, and 281 is preferably 1 × 10⁻⁶. 10 Ωc m or more 1×10 15 The density should be less than or equal to Ωcm.

[0115] Furthermore, insulators 216, 280, and 274 have a dielectric constant greater than insulator 214. A low rate is preferable. By using a material with a low dielectric constant as the interlayer film, parasitic activity between wiring is reduced. The capacity can be reduced. For example, insulator 216, insulator 280, and insulator 27 4. Silicon oxide, silicon oxide nitride, silicon nitride, silicon nitride, fluorine silicon oxide with added carbon, silicon oxide with added carbon and nitrogen Silicon, or silicon oxide with voids, can be used as appropriate.

[0116] Insulators 222 and 224 function as gate insulators.

[0117] Here, the insulator 224 in contact with the oxide 230 is preferably such that oxygen is removed by heating. In this specification, oxygen released by heating may be referred to as excess oxygen. For example, The edge body 224 may be made of silicon oxide or silicon oxide nitride, etc., as appropriate. By providing an insulating material in contact with the oxide 230, oxygen deficiency in the oxide 230 is reduced. This can improve the reliability of transistor 200.

[0118] Specifically, as the insulator 224, an oxide material is used from which some oxygen is desorbed by heating. It is preferable to do so. Oxides that desorb oxygen upon heating are defined as those analyzed by thermal desorption gas analysis (TDS( In thermal desorption spectroscopy analysis, oxygen The amount of molecular elimination is 1.0 × 10⁻⁶ 18 molecular / cm² 3 The above, preferably 1.0× 10 19 molecular / cm² 3 More preferably 2.0 × 10 19 mole cules / cm 3 Above, or 3.0 × 10 20 molecular / cm² 3 That's all. It is an oxide film. The surface temperature of the film during the above TDS analysis was 100°C or higher. A temperature of 700°C or less, or a range of 100°C to 400°C, is preferred.

[0119] Insulator 222 prevents impurities such as water or hydrogen from entering the transistor 200 from the substrate side. It is preferable that it functions as a barrier insulating film that suppresses this. For example, insulator 222 is It is preferable that the hydrogen permeability is lower than that of insulator 224. Insulator 222 and insulator 27 By surrounding the insulator 224 and oxide 230, etc., water or This can prevent impurities such as hydrogen from entering transistor 200.

[0120] Furthermore, the insulator 222 contains oxygen (for example, at least one such as an oxygen atom or oxygen molecule). It is preferable that the material has a function to suppress diffusion (i.e., the oxygen does not easily permeate it). For example, insulation It is preferable that body 222 has lower oxygen permeability than insulator 224. By having the function of suppressing the diffusion of impurities, the oxygen contained in oxide 230 becomes insulator 2 This is preferable because it reduces diffusion below 22. Also, the conductor 205 is an insulator. This can suppress the reaction of body 224 with oxygen present in oxide 230.

[0121] The insulator 222 is made of either or both aluminum and hafnium, which are insulating materials. It is preferable to use an insulator containing an oxide. Aluminum and / or hafnium. Insulators containing oxides include aluminum oxide, hafnium oxide, aluminum and ha It is preferable to use an oxide containing hafnium (such as hafnium aluminate). When an insulator 222 is formed using the same material, the insulator 222 is acid from the oxide 230. The emission of elemental particles and the introduction of impurities such as hydrogen from the peripheral area of ​​transistor 200 into oxide 230. It functions as an inhibitory layer.

[0122] Alternatively, these insulators may be, for example, aluminum oxide, bismuth oxide, germanium oxide. Umium, niobium oxide, silicon oxide, titanium oxide, tungsten oxide, yttrium oxide, Zirconium oxide may be added. Alternatively, these insulators may be subjected to nitriding treatment. Silicon oxide, silicon oxide nitride, or silicon nitride may be laminated as the insulator. .

[0123] Furthermore, the insulator 222 may be, for example, aluminum oxide, hafnium oxide, tantalum oxide, Zirconium oxide, lead zirconate titanate (PZT), strontium titanate (SrT) Includes so-called high-k materials such as iO3 or (Ba,Sr)TiO3 (BST). The insulating material may be used in a single layer or multilayer configuration. As transistors become smaller and more highly integrated... However, thinning the gate insulator can sometimes lead to problems such as leakage current. By using a high-k material as an insulator that functions as an insulator, the physical film thickness can be maintained. This makes it possible to reduce the gate potential during transistor operation.

[0124] The insulators 222 and 224 may have a laminated structure of two or more layers. In that case, it is not limited to laminated structures made of the same material, but also applies to laminated structures made of different materials. good.

[0125] On oxide 230b, oxide 243 is provided, and on oxide 243, a source electrode, and conductor 242 (conductor 242a, and conductor 242) which function as drain electrodes b) is provided. The thickness of the conductive material 242 is, for example, 1 nm or more and 50 nm or less, preferably The range should be between 2nm and 25nm.

[0126] Examples of conductive materials 242 include aluminum, chromium, copper, silver, gold, platinum, tantalum, and nickel. Titanium, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, Magnesium, zirconium, beryllium, indium, ruthenium, iridium, strontium Metal elements selected from rontium and lanthanum, or alloys containing the aforementioned metal elements. Alternatively, it is preferable to use an alloy or the like that which combines the above-mentioned metal elements. For example, tan nitride Tal, titanium nitride, tungsten, nitrides containing titanium and aluminum, tantalum and aluminum Nitrides containing ruthenium, ruthenium oxide, ruthenium nitride, strontium and ruthenium It is preferable to use oxides containing nitrile, oxides containing lanthanum and nickel, etc. Tantalum oxide, titanium nitride, titanium and aluminum nitrides, tantalum and aluminum Nitrides containing ruthenium oxide, ruthenium nitride, strontium and ruthenium-containing acids Oxides containing lanthanum and nickel are conductive materials that are resistant to oxidation, or that absorb oxygen. It is preferable because it is a material that maintains its conductivity even after storage.

[0127] Insulator 250 functions as a gate insulator. Insulator 250 is on top of oxide 230c It is preferable to arrange them in contact with the surface. The insulator 250 is silicon oxide, silicon oxide and nitride. silicon nitride oxide, silicon nitride, silicon oxide with added fluorine, carbon-added acid Using silicon oxide, silicon oxide with added carbon and nitrogen, and silicon oxide with voids This is possible. In particular, silicon oxide and silicon oxide-nitride are stable to heat. It is preferable.

[0128] Similar to insulator 224, insulator 250 uses an insulator that releases oxygen upon heating. It is preferable to form an insulator that releases oxygen upon heating, as insulator 250. By providing it in contact with the upper surface of oxide 230c, the channel formation region of oxide 230b It can effectively supply oxygen. Also, similar to insulator 224, insulator 250 It is preferable that the concentration of impurities such as water or hydrogen is reduced. The film thickness of the insulator 250 is It is preferable that the wavelength be between 1 nm and 20 nm.

[0129] Furthermore, a metal oxide may be provided between the insulator 250 and the conductor 260. It is preferable to suppress oxygen diffusion from the insulator 250 to the conductor 260. By providing a metal oxide that suppresses diffusion, the diffusion of oxygen from the insulator 250 to the conductor 260 is suppressed. This is suppressed. In other words, the decrease in the amount of oxygen supplied to oxide 230 can be suppressed. Furthermore, the oxidation of the conductor 260 by oxygen in the insulator 250 can be suppressed.

[0130] Furthermore, the metal oxide may function as part of the gate insulator. Therefore, when silicon oxide or silicon oxide nitride is used for the insulator 250, the metal acid For the oxide, it is preferable to use a metal oxide, which is a high-k material with a high dielectric constant. The insulator is made of a laminated structure of insulator 250 and the metal oxide, making it safe against heat. A laminated structure with constant dielectric constant and high relative permittivity can be achieved. Therefore, the physical properties of the gate insulator This makes it possible to reduce the gate potential applied during transistor operation while maintaining the film thickness. Furthermore, it becomes possible to thin the equivalent oxide film thickness (EOT) of the insulator that functions as a gate insulator. ru.

[0131] Specifically, hafnium, aluminum, gallium, yttrium, zirconium, t Magnesium, titanium, tantalum, nickel, germanium, or magnesium, etc. A metal oxide containing one or more selected types can be used. In particular, A An insulator containing an oxide of either luminium or hafnium, or both. Aluminum, hafnium oxide, aluminum and hafnium oxides (hafnium oxide) It is preferable to use materials such as luminescent coatings.

[0132] Alternatively, the metal oxide may function as part of the gate. It is preferable to provide an oxygen-containing conductive material on the channel-forming region side. By providing this on the channel-forming region side, oxygen released from the conductive material can form channels. It will become easier to supply the region.

[0133] In particular, it is contained in the metal oxide in which the channel is formed, as a conductor that functions as a gate. It is preferable to use a conductive material containing a metal element and oxygen. Conductive materials containing elements and nitrogen may be used. In addition, indium tin oxide and tung oxide may be used. Indium oxide containing tungsten, indium zinc oxide containing tungsten oxide, and tungsten oxide. Indium oxide containing tungsten, indium tin oxide containing titanium oxide, indium zinc oxide Indium tin oxide with added silicon may also be used. Um gallium zinc oxide may also be used. By using such a material, the channel shape In some cases, hydrogen contained in the metal oxide that is formed can be captured. Alternatively, the outside In some cases, it is possible to capture hydrogen that has been introduced from insulators and other materials.

[0134] Although the conductor 260 is shown as a two-layer structure in Figure 1, it may also be a single-layer structure or a three-layer structure or more. The above layered structure is also acceptable.

[0135] Conductor 260a contains hydrogen atoms, hydrogen molecules, water molecules, nitrogen atoms, nitrogen molecules, and nitrogen oxide molecules. Conductive material (such as N2O, NO, NO2, etc.) has the function of suppressing the diffusion of impurities such as copper atoms. It is preferable to use a material with low oxygen content. Alternatively, a small amount of oxygen (for example, oxygen atoms, oxygen molecules, etc.) It is preferable to use a conductive material that has the function of suppressing the diffusion of at least (1).

[0136] Furthermore, because the conductor 260a has the function of suppressing oxygen diffusion, the insulator 250 The oxygen contained in the material suppresses the oxidation of the conductor 260b, which reduces its conductivity. Yes, it is possible. Examples of conductive materials that have the function of suppressing oxygen diffusion include tantalum and nitrogen. It is preferable to use tantalum oxide, ruthenium oxide, or similar materials.

[0137] Furthermore, the conductor 260b is a conductive material mainly composed of tungsten, copper, or aluminum. It is preferable to use a conductive material. Also, since the conductor 260 also functions as wiring, It is preferable to use a highly conductive material. For example, tungsten, copper, or aluminum. A conductive material mainly composed of um can be used. In addition, the conductor 260b has a laminated structure. It may also be used as a laminated structure of titanium or titanium nitride and the above conductive material. good.

[0138] Insulator 280 is, for example, silicon oxide, silicon oxide nitride, silicon oxide nitride, fluorine silicon oxide with added nitrogen, silicon oxide with added carbon, and acid with added carbon and nitrogen. It is preferable to have silicon oxide or silicon oxide having voids. In particular, oxidized Silicon and silicon oxide nitride are preferred because they are thermally stable. In particular, silicon oxide Materials such as silicon oxide nitride and porous silicon oxide have acids that are released by heating. This is preferable because it allows for the easy formation of regions containing elements.

[0139] It is preferable that the concentration of impurities such as water or hydrogen in the insulator 280 is reduced. Furthermore, the upper surface of the insulator 280 may be flattened.

[0140] Insulator 282 or insulator 283 may contain impurities such as water or hydrogen from above. It is preferable that it functions as a barrier insulating film to suppress mixing with 80. Also, as an insulator 282 or insulator 283 can function as a barrier insulating film that suppresses oxygen permeation. Preferred. Examples of insulators 282 and 283 include aluminum oxide, nitride, etc. An insulator such as silicon or silicon nitride can be used. For example, insulator 282 As such, aluminum oxide, which has high blocking properties against oxygen, is used as the insulator 283. Therefore, silicon nitride, which has high blocking properties against hydrogen, can be used.

[0141] Furthermore, it is preferable to provide an insulator 274 that functions as an interlayer film on top of the insulator 282. i. Insulator 274, like insulator 224, has an impurity concentration of water or hydrogen in the film. It is preferable that this is reduced.

[0142] Conductors 240a and 240b are primarily composed of tungsten, copper, or aluminum. It is preferable to use conductive materials as components. Also, conductor 240a and conductor 24 0b may be a layered structure.

[0143] Furthermore, when the conductor 240 is made into a laminated structure, the insulator 281, insulator 274, insulator 28 2. The conductors in contact with insulators 280, 273, and 272 are supplied with water or water. It is preferable to use a conductive material that has the function of suppressing the permeation of impurities such as elements. For example, tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, or ruthenium oxide. It is preferable to use such a function. In addition, a function that suppresses the permeation of impurities such as water or hydrogen is also used. The conductive material may be used in a single layer or in a laminated form. By using this conductive material, The oxygen added to the insulator 280 is absorbed by the conductors 240a and 240b. This can be prevented. Also, impurities such as water or hydrogen can enter from above the insulator 281. This suppresses the mixing of material into the oxide 230 through the body 240a and the conductor 240b. Cut.

[0144] Examples of insulators 241a and 241b include silicon nitride and aluminum oxide. An insulator such as um or silicon nitride may be used. Insulator 241a and insulation Since body 241b is provided in contact with insulators 272 and 273, insulator 28 Impurities such as water or hydrogen enter from 0 through conductors 240a and 240b. It is possible to suppress the mixing of oxide 230. In particular, silicon nitride is effective against hydrogen. It is suitable because it has high blocking properties. Also, the oxygen contained in the insulator 280 is conductor 24 This prevents absorption by 0a and conductor 240b.

[0145] Furthermore, the upper surfaces of the conductor 240a and the upper surfaces of the conductor 240b function as wiring. Conductors 246 (conductors 246a and conductors 246b) may be arranged. 46 uses a conductive material whose main component is tungsten, copper, or aluminum. This is preferable. The conductor may also be in a laminated structure, for example, titanium or titanium nitride. The tan and the conductive material may be laminated. The conductor is provided on the insulator. It may be formed to be embedded in the opening.

[0146] <Component materials for semiconductor devices> The following describes the constituent materials that can be used in semiconductor devices.

[0147] <Circuit board> Examples of substrates for forming the transistor 200 include an insulating substrate, a semiconductor substrate, and A conductive substrate can be used. Examples of insulating substrates include glass substrates, quartz substrates, and Fire substrate, stabilized zirconia substrate (such as yttria-stabilized zirconia substrate), resin substrate There are plates and the like. Also, semiconductor substrates are made of materials such as silicon and germanium. Semiconductor substrates, or silicon carbide, silicon germanium, gallium arsenide, phosphate Examples include compound semiconductor substrates composed of zinc, zinc oxide, and gallium oxide. Furthermore, as mentioned above... A semiconductor substrate having an insulating region inside the semiconductor substrate, for example, SOI (Silicon Examples include on-insulator substrates. Conductive substrates include graphite substrates and metal substrates. These include alloy substrates, conductive resin substrates, etc. Alternatively, substrates containing metal nitrides, metal acids There are substrates containing monoxides, etc. Furthermore, there are substrates on which a conductor or semiconductor is provided on an insulating substrate. A substrate, a semiconductor substrate provided with a conductor or insulator, a conductive substrate provided with a semiconductor or insulator There are substrates with edges provided. Alternatively, substrates on which elements are provided can be used. This may also be done. The elements provided on the substrate may include capacitive elements, resistive elements, switching elements, and light-emitting elements. These include children, memory elements, etc.

[0148] <insulator> Insulators include insulating oxides, nitrides, oxidized nitrides, nitride oxides, and metal oxides. Examples include metal oxides, metal nitrides, and metal nitride oxides.

[0149] For example, as transistors become smaller and more integrated, the gate insulator can be made thinner. This can lead to problems such as leakage current. By using high-k materials, the physical film thickness is maintained while lowering the voltage during transistor operation. This becomes possible. On the other hand, for the insulator that functions as an interlayer film, a material with a low dielectric constant is used. This reduces parasitic capacitance between wires. Therefore, it is possible to reduce the parasitic capacitance that occurs between wires. Then, you should select the materials.

[0150] Furthermore, insulators with high dielectric constants include gallium oxide, hafnium oxide, and zirconium oxide. Oxides containing aluminum, aluminum, and hafnium, aluminum and hafnium Oxidized nitrides, silicon and hafnium oxides, silicon and hafnium Examples include oxide nitrides containing um, or nitrides containing silicon and hafnium.

[0151] Furthermore, examples of insulators with low dielectric constant include silicon oxide, silicon oxide nitride, and silicon nitride oxide. Silicon oxide with added fluorine, silicon oxide with added carbon, carbon and nitrogen Examples include silicon oxide with added material, silicon oxide with voids, or resins.

[0152] Furthermore, transistors using oxide semiconductors suppress the permeation of impurities such as hydrogen and oxygen. By surrounding the transistor with an insulator that has a controlling function, the electrical characteristics of the transistor are stabilized. This is possible. As an insulator that has the function of suppressing the permeation of impurities such as hydrogen and oxygen, For example, boron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon Phosphorus, chlorine, argon, gallium, germanium, yttrium, zirconium, or Insulators containing tan, neodymium, hafnium, or tantalum are used in single-layer or multi-layer configurations. It would be good to have one. Specifically, an insulating material that has the function of suppressing the permeation of impurities such as hydrogen and oxygen. As a supporting material, aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, Yttrium oxide, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, or metal oxides such as tantalum oxide, aluminum nitride, titanium aluminum nitride, nitrile Metal nitrides such as titanium dioxide, silicon nitride, or silicon nitride can be used. .

[0153] Furthermore, the insulator that functions as a gate insulator has regions containing oxygen that is released by heating. It is preferable that the insulator has a region containing oxygen that is desorbed by heating. By creating a structure in which silicon oxide or silicon oxide nitride is in contact with oxide 230, This can compensate for the oxygen deficiency present in 230.

[0154] <Conductive material> Examples of conductive materials include aluminum, chromium, copper, silver, gold, platinum, tantalum, nickel, and crystalline silver. Tun, molybdenum, tungsten, hafnium, vanadium, niobium, manganese, magnesium Zium, zirconium, beryllium, indium, ruthenium, iridium, strontium A metallic element selected from um, lanthanum, etc., or an alloy containing the aforementioned metallic elements. It is preferable to use an alloy or the like that which combines the above-mentioned metal elements. For example, tantalum nitride Titanium nitride, tungsten, nitrides containing titanium and aluminum, tantalum and aluminum Nitrides containing ruthenium, ruthenium oxide, ruthenium nitride, strontium and ruthenium It is preferable to use oxides containing lanthanum and nickel. Tantalum, titanium nitride, titanium and aluminum nitrides, tantalum and aluminum Includes nitrides, ruthenium oxide, ruthenium nitride, strontium and ruthenium oxides Oxides containing lanthanum and nickel are conductive materials that are resistant to oxidation, or that absorb oxygen. It is preferable because it is a material that maintains conductivity even when subjected to certain conditions. Furthermore, it does not contain impurity elements such as phosphorus. Highly electrically conductive semiconductors such as polycrystalline silicon and nickel silicides. Silicide may also be used.

[0155] Furthermore, multiple conductive layers formed from the above materials may be stacked and used. For example, as described above. A laminated structure may be formed by combining a material containing a metallic element with a conductive material containing oxygen. Furthermore, a laminate combining the aforementioned metal element-containing material and a nitrogen-containing conductive material is also used. It may also be used as a structure. Furthermore, a material containing the aforementioned metal element, a conductive material containing oxygen, and nitrogen A laminated structure combining conductive materials containing elements may also be used.

[0156] Furthermore, when using oxide in the channel formation region of a transistor, as the gate A functional conductor combines a material containing the aforementioned metal element with a conductive material containing oxygen. It is preferable to use a combined laminated structure. In this case, an oxygen-containing conductive material is channeled It is preferable to place it on the channel formation region side. The oxygen-containing conductive material should be placed on the channel formation region side. This makes it easier for oxygen released from the conductive material to be supplied to the channel-forming region.

[0157] In particular, it is contained in the metal oxide in which the channel is formed, as a conductor that functions as a gate. It is preferable to use a conductive material containing a metal element and oxygen. Conductive materials containing elements and nitrogen may be used. For example, titanium nitride, tantalum nitride, etc. A conductive material containing nitrogen may also be used. In addition, indium tin oxide and tungsten oxide may be used. Indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, titanium oxide Indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc oxide, Indium tin oxide with added silicon may also be used. Zinc oxide may be used. By using such a material, channels can be formed. In some cases, hydrogen contained in the metal oxide can be captured. Alternatively, the outer insulator In some cases, hydrogen introduced from sources such as these can be captured.

[0158] <Metal oxides> It is preferable to use a metal oxide that functions as an oxide semiconductor as oxide 230. The following describes metal oxides applicable to the oxide 230 according to the present invention.

[0159] The metal oxide preferably contains at least indium or zinc. In particular, indium Preferably, it contains aluminum and zinc. In addition, aluminum and gallium It is preferable that it contains yttrium or tin, as well as boron, titanium, and iron. Nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium , one of the following selected from hafnium, tantalum, tungsten, or magnesium, It may include multiple species.

[0160] Here, the metal oxide is In-M-Zn oxide, which has indium, element M, and zinc. Let's consider the case where it is a substance. Note that element M is aluminum, gallium, yttrium, and This is tin, etc. Other elements that can be applied to element M include boron, titanium, iron, and nitrile. Germanium, Zirconium, Molybdenum, Lanthanum, Cerium, Neodymium, Ha Examples include fluorium, tantalum, tungsten, and magnesium. However, as element M, In some cases, it is acceptable to combine multiple of the aforementioned elements.

[0161] In this specification, metal oxides containing nitrogen are also referred to as metal oxides (metal oxides). They are sometimes collectively referred to as metal oxynitrides (metal oxides). Also, metal oxides containing nitrogen are sometimes called metal oxynitrides (metal oxides). It may also be called tal oxynitride.

[0162] [Structure of metal oxides] Oxide semiconductors (metal oxides) include single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. It can be divided into conductors and conductors. Examples of non-single-crystal oxide semiconductors include CAAC-OS, multi-phase Amorphous oxide semiconductor, nc-OS, pseudo-amorphous oxide semiconductor (a-like OS: amor (Phosphor-like oxide semiconductor), and amorphous oxide Examples include semiconductors.

[0163] CAAC-OS has c-axis orientation and multiple nanocrystals are linked in the ab-plane direction. It has a crystalline structure that is linked and distorted. Note that distortion refers to the linkage between multiple nanocrystals. Within a region, between a region with a aligned grid arrangement and another region with a aligned grid arrangement, the grid arrangement This refers to the point where the orientation has changed.

[0164] Nanocrystals are based on a hexagonal shape, but they are not necessarily regular hexagons; they can also be non-regular hexagonal. There are also cases where the distortion has a grid arrangement such as pentagons and heptagons. Furthermore, in CAAC-OS, even near strain, clear grain boundaries (grain bows) are present. It is difficult to confirm (also called unduli). In other words, due to the distortion of the lattice arrangement, the crystal It can be seen that grain boundary formation is suppressed. This is because CAAC-OS is in the ab-plane direction. In this case, the arrangement of oxygen atoms is not dense, and the substitution of metal elements reduces the interatomic bond distance. This is because the distortion can be tolerated due to changes in other factors.

[0165] Furthermore, CAAC-OS consists of a layer containing indium and oxygen (hereinafter referred to as the In layer), and A layered crystal in which layers containing element M, zinc, and oxygen (hereinafter referred to as (M,Zn) layers) are stacked. It tends to have a structure (also called a layered structure). Note that indium and element M are relative to each other. It is interchangeable, and if element M in the (M,Zn) layer is replaced with indium, then (In,M,Zn It can also be represented as a layer. Furthermore, if the indium in the In layer is replaced by element M, (In, It can also be represented as layer M.

[0166] CAAC-OS is a highly crystalline metal oxide. On the other hand, CAAC-OS has a clear bond. Because it is difficult to confirm grain boundaries, a decrease in electron mobility caused by grain boundaries is less likely to occur. It can be said that... Also, the crystallinity of metal oxides decreases due to the inclusion of impurities and the formation of defects. Because this can occur, CAAC-OS may contain impurities or defects (oxygen deficiency (V) O :oxygen v It can also be said that it is a metal oxide with low acancy (also called acancy). Therefore, CAAC- Metal oxides containing OS have stable physical properties. Therefore, CAAC-OS is Metal oxides are heat-resistant and highly reliable.

[0167] nc-OS is used in minute regions (for example, regions between 1 nm and 10 nm, especially regions larger than 1 nm). It has periodicity in the atomic arrangement in the region of 3 nm or less. Also, nc-OS has different na No regularity is observed in the crystal orientation between the crystals. Therefore, no orientation is observed throughout the entire film. Therefore, depending on the analytical method, nc-OS may be a-like OS or amorphous oxide semiconductor. It can sometimes be indistinguishable from the body.

[0168] Furthermore, indium is a type of metal oxide containing indium, gallium, and zinc. Um-gallium-zinc oxide (hereinafter referred to as IGZO) is stable when formed into the nanocrystals described above. It may take on a structure. In particular, IGZO tends to have difficulty growing crystals in the atmosphere. Smaller crystals (for example) are preferable to larger crystals (here, crystals of a few millimeters or a few centimeters). In some cases, using the aforementioned nanocrystal structure may result in greater structural stability.

[0169] a-like OS is a metallic acid having a structure between nc-OS and amorphous oxide semiconductors. It is a monster. a-like OS has porous or low-density regions. That is, a-li ke OS has lower crystallinity compared to nc-OS and CAAC-OS.

[0170] Oxide semiconductors (metal oxides) can take on diverse structures, each possessing different properties. An oxide semiconductor according to one aspect of the present invention is an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, and a-li It may have two or more of the following: ke OS, nc-OS, and CAAC-OS.

[0171] Furthermore, in a semiconductor device according to one aspect of the present invention, the structure of the oxide semiconductor (metal oxide) There are no particular limitations, but it is preferable that it be crystalline. For example, if oxide 230 is CA The AC-OS structure allows for a hexagonal crystal structure of oxide 243. By using the above crystal structure for 0 and oxide 243, a semiconductor device with high reliability can be obtained. It is possible to also roughly analyze oxides 230a, 230c, and 243. The same composition can be achieved.

[0172] [impurities] Here, we will explain the effects of various impurities in metal oxides.

[0173] Furthermore, if the metal oxide contains alkali metals or alkaline earth metals, it can form defect levels. This can result in the generation of carriers. Therefore, alkali metals or alkaline earth metals Transistors that use metal oxides containing the group in the channel formation region are normally-on This is a common characteristic. Therefore, the concentration of alkali metals or alkaline earth metals in metal oxides It is preferable to reduce the degree. Specifically, alkali metals or alkalis in metal oxides. Concentration of earth metals (Secondary Ion Mass Spectrometry (SIMS)) The concentration obtained by ss Spectrometry is 1 × 10⁻⁶ 18 atom / cm 3 The following is preferably 2 × 10 16 atoms / cm 3 Do the following:

[0174] Furthermore, the hydrogen contained in metal oxides reacts with the oxygen bonded to the metal atoms to form water. This can sometimes form an oxygen deficiency. When hydrogen enters this oxygen deficiency, the carrier electrons... In some cases, a child may be produced. Also, some of the hydrogen combines with the metal atom and oxygen, resulting in a crystal. It can generate electrons, which are carriers. Therefore, using a metal oxide containing hydrogen... Transistors tend to exhibit normally-on characteristics.

[0175] Therefore, it is preferable that the hydrogen content in the metal oxide be reduced as much as possible. Specifically In metal oxides, the hydrogen concentration obtained by SIMS is 1 × 10⁻⁶. 20 atoms / cm 3 Less than 1 × 10 19 atoms / cm 3 Less than 5x1 0 18 atoms / cm 3Less than 1 × 10 18 atoms / cm 3 less than Therefore, metal oxides with sufficiently reduced impurities are used in the channel formation region of the transistor. This allows for the provision of stable electrical characteristics.

[0176] For the metal oxide used in the semiconductor of a transistor, it is preferable to use a thin film with high crystalline properties. It seems that using this thin film can improve the stability or reliability of transistors. Yes, it is possible. Examples of such thin films include thin films of single-crystal metal oxides or thin films of polycrystalline metal oxides. These include thin films of single-crystal metal oxides or thin films of polycrystalline metal oxides. Forming on a substrate requires a high-temperature or laser heating process. Therefore, the manufacturing process This would increase costs and also decrease throughput.

[0177] <Method for fabricating semiconductor devices> Next, regarding the semiconductor device having the transistor 200 according to the present invention, as shown in Figure 1, The manufacturing method will be explained using Figures 3 to 12. Also, in Figures 3 to 12, (A (A) shows a top view. Also, (B) in each figure is the section shown by the dashed line A1-A2 in (A). This is a cross-sectional view corresponding to the position, and is also a cross-sectional view of transistor 200 in the channel length direction. Furthermore, (C) in each figure is a cross-sectional view corresponding to the area shown by the dashed line A3-A4 in (A). This is also a cross-sectional view of transistor 200 in the channel width direction. Note that (A) in each figure is a top view. Therefore, some elements have been omitted to clarify the diagram.

[0178] First, a substrate (not shown) is prepared, and an insulator 212 is deposited on the substrate. The 12 film deposition methods include sputtering and chemical vapor deposition (CVD). Deposition method, Molecular beam epitaxy (MBE) EAM Epitaxy, Pulsed Laser Deposition (PLD) This can be done using methods such as the Deposition method or the ALD method.

[0179] Furthermore, the CVD method is a type of plasma CVD (PECVD) that utilizes plasma. Enhanced CVD (Enhanced CVD), Thermal CVD (TCVD: Thermal CCVD) which utilizes heat. It can be classified into methods such as the VD method and the photoCVD method which utilizes light. Depending on the source gas used, the process can be metal CVD (MCVD) or organometallic CVD. It can be divided into (MOCVD: Metal Organic CVD) methods.

[0180] Plasma CVD can produce high-quality films at relatively low temperatures. Thermal CVD, on the other hand, is a method that can produce high-quality films at low temperatures. A film deposition method that does not use Zuma, thus minimizing plasma damage to the workpiece. For example, wiring, electrodes, and elements (transistors, capacitive elements, etc.) included in semiconductor devices. ) and others can be charged up by receiving an electric charge from the plasma. In cases where the accumulated charge destroys the wiring, electrodes, and elements contained in the semiconductor device. On the other hand, in the case of thermal CVD methods that do not use plasma, such plasma damage occurs. Therefore, the yield of semiconductor devices can be increased. Also, in the thermal CVD method, Because plasma damage does not occur within the film, a film with fewer defects can be obtained.

[0181] Furthermore, the ALD method utilizes the self-regulating properties of atoms to deposit atoms layer by layer. This allows for the deposition of extremely thin films, enabling film deposition on structures with high aspect ratios, and pinholes. It enables film formation with fewer defects such as blemishes, allows for film formation with excellent coverage, and enables film formation at low temperatures. It has effects such as [effects]. In addition, the ALD method includes the plasma-based film deposition method PEALD ( This also includes the Plasma Enhanced Algal Drying (ALD) method. By utilizing plasma, This allows for film deposition at lower temperatures, which is preferable in some cases. Some contain impurities such as carbon. Therefore, the film created by the ALD method is different from others. Compared to films formed by the aforementioned film formation method, this method may contain more impurities such as carbon. The quantitative determination of impurities is performed using X-ray photoelectron spectroscopy (XPS). This can be done using Spectroscopy.

[0182] CVD and ALD are film deposition methods in which particles emitted from a target or other source are deposited. Unlike other methods, this is a film-forming method in which a film is formed by a reaction on the surface of the object being treated. This film-forming method is less affected by the shape of the workpiece and has good step-level coverage. Furthermore, the ALD method has excellent step coverage and excellent thickness uniformity, thus aspect ratio This method is suitable for coating the surface of high-aperture openings, etc. However, the ALD method is relatively suitable for film formation. Because of its slow rate, it should be used in combination with other film deposition methods that have a faster deposition rate, such as CVD. In some cases, this may be preferable.

[0183] The CVD and ALD methods control the composition of the resulting film by adjusting the flow rate ratio of the source gases. This is possible. For example, in the CVD method and ALD method, the flow rate ratio of the raw material gas can be adjusted as needed. A film with the following composition can be formed. Furthermore, for example, in the CVD method and ALD method, film formation can be performed. By changing the flow rate ratio of the raw material gas while simultaneously depositing a film with a continuously changing composition. This is possible. When forming a film while changing the flow rate ratio of the raw material gas, multiple deposition chambers can be used. Compared to the method of film deposition using a conveyor belt, it eliminates the time required for transport and pressure adjustment, thus reducing the time required for film deposition. The interval can be shortened. Therefore, the productivity of semiconductor devices can be increased. There is.

[0184] In this embodiment, silicon nitride is deposited as the insulator 212 by the CVD method. Thus, as the insulator 212, an insulator that is impermeable to copper, such as silicon nitride, is used. By doing so, a diffusive metal such as copper is used in the conductor layer (not shown) below the insulator 212. Even if present, it is possible to suppress the diffusion of the metal to the upper layer through the insulator 212. Furthermore, by using an insulator that is resistant to the permeability of impurities such as water or hydrogen, such as silicon nitride... This suppresses the diffusion of impurities such as water or hydrogen from the layer below the insulator 212. Cut.

[0185] Next, an insulator 214 is deposited on the insulator 212. The insulator 214 is deposited by sputtering. This can be performed using methods such as the blotting method, CVD method, MBE method, PLD method, or ALD method. In this embodiment, aluminum oxide is used as the insulator 214.

[0186] Next, an insulator 216 is deposited on the insulator 214. The insulator 216 is deposited by sputtering. This can be performed using methods such as the blotting method, CVD method, MBE method, PLD method, or ALD method.

[0187] Next, an opening is formed in the insulator 216 that reaches the insulator 214. An opening is, for example, a groove or This also includes slits, etc. Furthermore, the term "opening" can sometimes refer to the area where an opening has been formed. The opening can be formed using wet etching, but dry etching is preferable. This is preferable for microfabrication. In addition, the insulator 214 forms grooves by etching the insulator 216. It is preferable to select an insulator that functions as an etching stopper film during the etching process. When a silicon oxide film is used for the insulator 216 that forms the groove, the insulator 214 is silicon nitride Cone film, aluminum oxide film, and hafnium oxide film are suitable options.

[0188] After the opening is formed, a conductive film that will become the conductor 205a is formed. The conductive film allows oxygen to permeate. It is desirable to include a conductor that has a suppressive function. For example, tantalum nitride, tan nitride Tungsten, titanium nitride, etc. can be used. Alternatively, tantalum, tungsten, titanium The film will be a laminate of molybdenum, aluminum, copper, and a molybdenum-tungsten alloy. This can be done. The conductive film that will become the conductive material 205a can be deposited by sputtering, CVD, or MBE. This can be done using methods such as the PLD method or ALD method.

[0189] In this embodiment, the conductive film that becomes the conductor 205a has a multilayer structure. First, sputtering A tantalum nitride film is formed by a tangent molding process, and titanium nitride is then laminated on top of the tantalum nitride film. By using such a metal nitride as the lower layer of the conductor 205b, the conductor 20 described later Even if a diffusible metal such as copper is used as the conductive film for 5b, if the metal is conductor 205 This can prevent diffusion from a to the outside.

[0190] Next, a conductive film that will become the conductor 205b is formed. The formation of this conductive film is done by plating, spalling, etc. This can be done using methods such as Taring, CVD, MBE, PLD, or ALD. In this embodiment, the conductive film that becomes the conductor 205b is a low-resistance conductive material such as copper. A thin film is formed.

[0191] Next, by performing CMP treatment, a conductive film that becomes conductor 205a and conductor 205 A portion of the conductive film b is removed, exposing the insulator 216. As a result, only the opening is conductive. The electric element 205a and the conductor 205b remain. As a result, the top surface of the conductor 205 is flat. This can be formed. Furthermore, this CMP treatment removes a portion of the insulator 216. This can sometimes happen (see Figure 3).

[0192] In the above, the conductor 205 was formed to be embedded in the opening of the insulator 216. However, this embodiment is not limited to this. For example, a conductor 20 on an insulator 214 Form 5, deposit an insulator 216 on the conductor 205, and perform CMP treatment on the insulator 216. This means that a portion of the insulator 216 can be removed, exposing the surface of the conductor 205.

[0193] Next, an insulator 222 is formed on the insulator 216 and the conductor 205. As such, an insulating film containing an oxide of aluminum and / or hafnium is formed. It is desirable to do so. Furthermore, an insulator containing an oxide of either aluminum or hafnium or both. Examples include aluminum oxide, hafnium oxide, and aluminum and hafnium oxides. It is preferable to use materials such as aluminum and hafnium aluminate. Insulators containing oxides of one or both of the elements provide a barrier against oxygen, hydrogen, and water. It has. The insulator 222 has barrier properties against hydrogen and water, so the transient Hydrogen and water contained in the structure surrounding Ta 200 are transmitted through the insulator 222. Diffusion into the transistor 200 is suppressed, and the formation of oxygen vacancies in the oxide 230 is inhibited. It can be suppressed.

[0194] The insulator 222 is deposited by sputtering, CVD, MBE, PLD, or A This can be done using methods such as the LD method.

[0195] Next, an insulating film 224A is deposited on the insulator 222. The deposition of the insulating film 224A is performed by spa This can be done using methods such as Taring, CVD, MBE, PLD, or ALD. Cut.

[0196] Next, it is preferable to perform a heat treatment. The heat treatment should be performed at a temperature of 250°C to 650°C. The process is carried out at a temperature of 300°C to 500°C, more preferably 320°C to 450°C. That's fine. Note that the heat treatment should be performed in a nitrogen or inert gas atmosphere, or with an oxidizing gas at 10 pp. The process should be carried out in an atmosphere containing m or more, 1% or more, or 10% or more. Furthermore, the heat treatment should be performed under reduced pressure. It may be done. Alternatively, the heat treatment may be performed after heat treatment in a nitrogen or inert gas atmosphere. To compensate for the removed oxygen, it contains an oxidizing gas at a concentration of 10 ppm or more, 1% or more, or 10% or more. Heat treatment may be performed in a suitable atmosphere.

[0197] In this embodiment, after processing at a temperature of 400°C for 1 hour in a nitrogen atmosphere, The material is then treated in an oxygen atmosphere at a temperature of 400°C for 1 hour. This heat treatment improves insulation. Impurities such as water and hydrogen contained in membrane 224A can be removed.

[0198] Furthermore, the heat treatment may be performed after the film formation of the insulator 222. This heat treatment is as described above. Heat treatment conditions can be used.

[0199] Here, in order to form an excess oxygen region in the insulating film 224A, an oxygen-containing plastic is used under reduced pressure. Zuma treatment may be performed. Oxygen-containing plasma treatment can be performed, for example, using microwaves at high density. It is preferable to use a device that has a power supply for generating plasma. Alternatively, RF can be used on the substrate side. It may have a power supply that applies high-frequency waves such as the above. By using high-density plasma, high density It can generate oxygen radicals, and by applying RF to the substrate side, a high-density plasma can be created. The oxygen radicals generated by this process can be efficiently guided into the insulating film 224A. This device is used to perform plasma treatment with an inert gas, and then replenishes the desorbed oxygen. For this purpose, plasma treatment containing oxygen may be performed. The conditions for the plasma treatment may be selected as appropriate. By selecting this method, it is possible to remove impurities such as water and hydrogen contained in the insulating film 224A. In that case, heat treatment is not necessary.

[0200] Here, aluminum oxide is applied to the insulating film 224A, for example, by sputtering. A film may be formed, and CMP may be performed on the aluminum oxide until it reaches the insulating film 224A. Performing this CMP will planarize and smooth the surface of the insulating film 224A. This can be done by placing the aluminum oxide on the insulating film 224A and performing CMP. This makes it easier to detect the endpoint of the CMP. Also, the CMP affects a part of the insulating film 224A. The film may be polished, causing the thickness of the insulating film 224A to become thinner, but when the insulating film 224A is formed... The film thickness can be adjusted accordingly. By planarizing and smoothing the surface of the insulating film 224A, later This prevents deterioration of the coverage rate of the oxide film being deposited, thereby preventing a decrease in the yield of semiconductor devices. In some cases, aluminum oxide may be applied to the insulating film 224A by sputtering. This is preferable because it allows oxygen to be added to the insulating film 224A by forming the film.

[0201] Next, oxide films 230A and 230B are sequentially deposited on insulating film 224A (see Figure 3). (Illuminate). Furthermore, it is preferable to continuously deposit the above oxide film without exposing it to the atmospheric environment. By forming the film without opening it to the air, the oxide film 230A and oxide film 230B are protected from the atmospheric environment. This prevents impurities or moisture from adhering to oxide film 230A and oxide film 230B. The vicinity of the interface can be kept clean.

[0202] The oxide films 230A and 230B were deposited by sputtering, CVD, and MBE. This can be done using methods such as the PLD method or the ALD method.

[0203] For example, oxide film 230A and oxide film 230B are deposited by sputtering. In this case, oxygen or a mixture of oxygen and a noble gas is used as the sputtering gas. By increasing the proportion of oxygen in the puttering gas, excess oxygen in the formed oxide film... This can increase the amount. Also, when the above oxide film is deposited by sputtering: The above-mentioned In-M-Zn oxide target can be used.

[0204] In particular, during the deposition of oxide film 230A, some of the oxygen contained in the sputtering gas becomes the insulating film. It may be supplied to 224A. Therefore, the sputtering gas for oxide film 230A The oxygen content should be 70% or more, preferably 80% or more, and more preferably 100%. That's all you need to do.

[0205] Furthermore, when forming oxide film 230B by sputtering, the sputtering gas contains When the oxygen content is set to 1% or more and 30% or less, preferably 5% or more and 20% or less, the film is formed. Oxygen-deficient oxide semiconductors are formed. The transistor used in this region provides relatively high field-effect mobility. Also, when the substrate is heated... By performing film formation while simultaneously depositing the oxide film, the crystallinity of the oxide film can be improved. However, one aspect of the present invention is not limited thereto. The oxide film 230B is formed by a sputtering method. In this case, the proportion of oxygen in the sputtering gas is preferably between 30% and 100%. Alternatively, if the film is deposited with an oxygen content of 70% to 100%, an oxygen-rich oxide semiconductor is formed. Transistors using oxygen-rich oxide semiconductors in the channel formation region are relatively high Reliability can be obtained.

[0206] In this embodiment, the oxide film 230A is formed by sputtering, using the In:Ga: Zn = 1:1:0.5 [atomic ratio] (2:2:1 [atomic ratio]), or 1:3:4 [ The film is deposited using a target with an atomic ratio. In addition, as oxide film 230B, sputtering According to the method, In:Ga:Zn = 4:2:4.1 [atomic ratio], or 1:1:1 [ The film is deposited using a target with an atomic ratio. Note that each oxide film is determined by the deposition conditions and atomic ratio. By appropriately selecting the ratio, the oxide 230 can be formed to match the desired properties.

[0207] Next, heat treatment may be performed. The heat treatment can be carried out using the heat treatment conditions described above. The heat treatment removes the water, hydrogen, and other impurities from the oxide film 230A and oxide film 230B. It is possible to remove pure substances, etc. In this embodiment, at a temperature of 400°C in a nitrogen atmosphere After a 1-hour treatment, the sample is continuously treated in an oxygen atmosphere at a temperature of 400°C for another 1 hour. cormorant.

[0208] Next, an oxide film 243A is deposited on the oxide film 230B (see Figure 3). Thin film deposition is performed using sputtering, CVD, MBE, PLD, or ALD methods. It can be done. Oxide film 243A has an atomic ratio of Ga to In, compared to oxide film 230B. It is preferable that the atomic ratio of Ga to In is greater than that of In. In this embodiment, oxide film 2 As 43A, the atom ratio In:Ga:Zn=1:3:4 was obtained by sputtering. The film is deposited using the target.

[0209] Next, a conductive film 242A is deposited on the oxide film 243A (see Figure 3). Thin film deposition is performed using sputtering, CVD, MBE, PLD, or ALD methods. It is possible to do so.

[0210] Next, using lithography, oxide film 230A, oxide film 230B, and oxide film 243A were obtained. , and the conductive film 242A is processed into an island shape to form oxide 230a, oxide 230b, oxide layer Form layers 243B and 242B (see Figure 4). Furthermore, this process is performed using a dryer. The etching method and the wet etching method can be used. The process is suitable for microfabrication. Although not shown in the diagram, in this process, the insulating film 224A The film thickness may be thinner in areas that do not overlap with oxide 230a.

[0211] In lithography, the resist is first exposed through a mask. Next, exposure... The selected area is removed or left intact using a developer to form a resist mask. Next, By etching through the resist mask, conductors, semiconductors, or insulators, etc. It can be processed into the desired shape. For example, KrF excimer laser light, ArF excimer Using malea light, EUV (Extreme Ultraviolet) light, etc., A resist mask can be formed by exposing the resist. Also, between the substrate and the projection lens Alternatively, an immersion technique may be used, in which a liquid (e.g., water) is filled into the container and exposed to light. Alternatively, electron beams or ion beams may be used. If used, a mask is not required. Note that to remove the resist mask, an ashing process is necessary. Which dry etching process, which wet etching process, dry etching process After processing, wet etching is performed, or dry etching is performed after wet etching. It can perform a processing step.

[0212] Alternatively, a hard mask made of an insulator or conductor may be used instead of a resist mask. When using a hard mask, an insulating film or conductive material that will serve as the hard mask material will be placed on the conductive film 242A. Forming a film, forming a resist mask on it, and etching the hard mask material. This allows for the formation of a hard mask of the desired shape. Etching of conductive film 242A, etc. This can be done after removing the resist mask, or it can be done with the resist mask still in place. That is also good. In the latter case, the resist mask may disappear during etching. Conductive film 24 After etching 2A, the hard mask may be removed by etching. If the material used for the mask does not affect subsequent processes, or can be used in subsequent processes, then it is not necessarily necessary to use a hard mask. There is no need to remove Domask.

[0213] As a dry etching apparatus, a capacitively coupled plasma (CCP) system with parallel plate electrodes is used. (Capacitively Coupled Plasma) Etching apparatus is used. Capacitively coupled plasma etching apparatus having parallel plate electrodes can be used. Alternatively, a high-frequency power supply may be applied to one electrode of the type electrode. Or, one of the parallel plate type electrodes. Alternatively, a configuration in which multiple different high-frequency power supplies are applied to the electrodes may be used. Or a parallel plate type electrode Alternatively, a configuration in which a high-frequency power supply of the same frequency is applied to each of them may be used. Alternatively, a configuration in which high-frequency power supplies of different frequencies are applied may be used. Or, a high-density plasma source may be used. A dry etching apparatus can be used. Dry etching with a high-density plasma source. The device is, for example, an inductively coupled plasma (ICP) device. Etching equipment such as an ed Plasma etching device can be used.

[0214] Here, oxide 230a, oxide 230b, oxide layer 243B, and conductive layer 242 B is formed such that at least a portion of it overlaps with the conductor 205. Also, oxide 230a, The sides of oxide 230b, oxide layer 243B, and conductive layer 242B are insulator 222 It is preferable that it be approximately perpendicular to the top surface. Oxide 230a, Oxide 230b, Oxide The sides of layer 243B and the conductive layer 242B are approximately perpendicular to the upper surface of the insulator 222. This allows for miniaturization and high density when multiple transistors 200 are installed. Alternatively, oxide 230a, oxide 230b, oxide layer 243B, and conductive layer 242 The configuration may be such that the angle between B and the upper surface of the insulator 222 is low. In that case, the oxide Sides of 230a, oxide 230b, oxide layer 243B, and conductive layer 242B and insulator The angle formed by the top surface of 222 is preferably 60° or more and less than 70°. By adopting such a shape, In subsequent processes, the coating properties of the insulator 272 and other materials are improved, reducing defects such as porosity. It is possible.

[0215] Furthermore, there is a curved surface between the side surface of the conductive layer 242B and the upper surface of the conductive layer 242B. In other words, the edges of the sides and the edges of the top surface are preferably curved (hereinafter referred to as rounded). (Also known as) The curved surface, for example, at the edge of the conductive layer 242B, has a radius of curvature of 3 nm or less. The upper part should be 10 nm or less, preferably 5 nm to 6 nm. By not having corners at the ends. This improves the film's coverage in subsequent film formation processes.

[0216] Next, insulating film 224A, oxide 230a, oxide 230b, oxide layer 243B, and conductive An insulating film 272A is deposited on the electrostatic layer 242B (see Figure 5).

[0217] The insulating film 272A is deposited by sputtering, CVD, MBE, PLD, or A This can be done using methods such as the LD method. The insulating film 272A has a function to suppress oxygen permeation. It is preferable to use an insulating film having a certain property. For example, by sputtering or ALD. Then, aluminum oxide, silicon nitride, silicon oxide, or gallium oxide is deposited as a film. That's good too.

[0218] Next, insulating film 273A is deposited on insulating film 272A (see Figure 5). Insulating film 273A The film deposition is carried out using methods such as sputtering, CVD, MBE, PLD, or ALD. This can be done by, for example, by the ALD method, aluminum oxide can be deposited into a film. In this embodiment, aluminum oxide is deposited by the ALD method. It is also possible to have a configuration in which the edge film 273A is not formed.

[0219] Next, an insulating film that will become an insulator 280 is deposited on the insulating film 273A. The deposition of the insulating film is carried out by sputtering, CVD, MBE, PLD, or ALD. This can be done using methods such as sputtering. For example, as the insulator 280, the sputtering method can be used. A silicon oxide film is formed, and then silicon oxide is applied to it using the PEALD method or thermal ALD method. A reconstituted film should be deposited.

[0220] Next, the insulating film that will become the insulator 280 is subjected to CMP treatment to form an insulator 280 with a flat top surface. To accomplish (see Figure 6).

[0221] Microwave treatment may be performed here. Microwave treatment is performed in an oxygen-containing atmosphere. It is preferable to perform the process under reduced pressure. By performing microwave processing, microwave 29 An electric field due to 0 is applied to the insulator 280, oxide 230a and oxide 230b, and the insulator 280, the VoH of oxides 230a and 230b can be separated into Vo and hydrogen. Yes, it is possible. At this time, some of the separated hydrogen combines with the oxygen present in the insulator 280 to form H2O. In some cases, it may be removed by doing so. Also, some of the hydrogen is removed by insulators 272 and 273. In some cases, the conductor 242 may be gettered via this.

[0222] Alternatively, heat treatment may be performed while maintaining a reduced pressure state after microwave treatment. By performing this treatment, the insulator 280 and oxide 230a, and oxide 230b The hydrogen inside can be efficiently removed. Alternatively, a reduced pressure state can be maintained after microwave treatment. The step of heating may be repeated multiple times in the same state. After performing the procedure for 10 seconds to 300 seconds, preferably 30 to 60 seconds, maintain the reduced pressure state. Heat treatment is performed for a time of 30 seconds to 3000 seconds, preferably 300 seconds or close to that time. Step 2 to 10 times may be performed. By repeating the heat treatment, the insulator 28 Hydrogen in 0 and oxide 230 can be removed more efficiently. The processing temperature is preferably between 300°C and 500°C.

[0223] Furthermore, by performing microwave treatment, the film quality of the insulator 280 is modified, and hydrogen Therefore, the diffusion of water or impurities can be suppressed after the formation of the insulator 280. In subsequent processes, such as heat treatment, hydrogen, water, or impurities may enter through the insulator 280. This can suppress diffusion into oxide 230 (see Figure 6). The configuration of the apparatus will be described later.

[0224] Furthermore, a microwave processing method different from the one described above will be explained below. The insulator 280 is... An insulating film is formed, and by performing a process such as CMP, an insulator 280 with a flat surface is formed. For example, on the insulator 280, using a sputtering method in an oxygen-containing atmosphere, Then, after forming an aluminum oxide film, under an oxygen-containing atmosphere and under reduced pressure, the microphone Microwave processing may be performed. By performing microwave processing, the electric current from microwave 290 is transmitted. A field is provided between the insulator 280 and the oxide 230, and in the insulator 280 and the oxide 230 VoH can be split into Vo and hydrogen. At this time, some of the hydrogen that is split becomes oxidized. During luminium film formation, oxygen injected into the insulator 280 combines to form H2O, and the insulator 28 It may accumulate at and near the interface between 0 and aluminum oxide. Next, for example, By performing CMP treatment to remove aluminum oxide from the insulator 280, the insulator 280 and This method can remove H2O accumulated at and near the interface with aluminum oxide. Furthermore, some of the hydrogen is gettered to the conductor 242 via insulators 272 and 273. It may be ringed. In this way, by performing microwave treatment, the insulator 280 Furthermore, the hydrogen concentration in oxide 230 can be reduced. After separating it into Vo and hydrogen, oxygen is supplied to the existing Vo, thereby repairing the Vo. It can be compensated for.

[0225] Alternatively, heat treatment may be performed while maintaining a reduced pressure state after microwave treatment. By performing this treatment, hydrogen is efficiently removed from the insulator 280 and the oxide 230. It is possible to perform heat treatment while maintaining a reduced pressure state after microwave treatment. The steps may be repeated multiple times. For example, microwave processing for 10 seconds to 300 seconds. Preferably, after performing the following steps for 30 to 60 seconds, maintain the reduced pressure for 30 seconds or more. The step of performing a heat treatment for 0 seconds or less, preferably 300 seconds or close to that duration, is repeated twice. This can be repeated up to 10 times. By repeatedly performing the heat treatment, the insulator 280 and oxide 2 This allows for even more efficient removal of hydrogen from the 30. The heat treatment temperature is 300°C. It is preferable to keep the temperature below 500°C.

[0226] Furthermore, by performing microwave treatment, the film quality of the insulator 280 is modified, and hydrogen Therefore, the diffusion of water or impurities can be suppressed after the formation of the insulator 280. In subsequent processes, such as heat treatment, hydrogen, water, or impurities may enter through the insulator 280. This can suppress diffusion into oxide 230. The above describes different microwave processing methods. That is the case.

[0227] Next, a portion of the insulator 280, a portion of the insulating film 273A, a portion of the insulating film 272A, and an oxide layer. Part of 243B and part of the conductive layer 242B are processed to reach the oxide 230b. An opening is formed. It is preferable that the opening be formed so as to overlap with the conductor 205. Through the formation of oxide 243a, oxide 243b, conductor 242a, conductor 242b, Insulators 272, 273, and 224 are formed (see Figure 7).

[0228] Also, a portion of the insulator 280, a portion of the insulating film 273A, a portion of the insulating film 272A, and the oxide layer The processing of a portion of 243B and a portion of the conductive layer 242B was carried out under different conditions. This may also be done. For example, a portion of the insulator 280 may be processed by a dry etching method to create an insulating film 273A A portion of the film was processed by wet etching, and a portion of the insulating film 272A and a portion of the oxide layer 243B were processed. The part and a portion of the conductive layer 242B may be processed by dry etching.

[0229] Conventional processes such as dry etching can cause oxidation in etching gases, etc. The impurities caused by these impurities adhere to the surface or interior of oxide 230a and oxide 230b, and It can diffuse. Impurities include, for example, fluorine or chlorine.

[0230] To remove the above-mentioned impurities, washing is performed. The washing method involves using a washing solution, etc. These include wet cleaning, plasma treatment using plasma, or cleaning by heat treatment. The above cleaning methods may be combined as appropriate.

[0231] For wet cleaning, use oxalic acid, phosphoric acid, ammonia water, or hydrofluoric acid, etc. Washing may be performed using an aqueous solution diluted with carbonated water or distilled water. Alternatively, distilled water or Ultrasonic cleaning using carbonated water may also be performed.

[0232] Heat treatment may be performed after the etching or cleaning described above. For example, the heat treatment may be performed after the etching or cleaning described above. The heat treatment should be carried out at a temperature between 100°C and 400°C. Note that the heat treatment should be performed using nitrogen gas or an inert gas. A gaseous atmosphere, or containing oxidizing gases at a concentration of 10 ppm or more, 1% or more, or 10% or more. The process is carried out in an atmosphere. For example, the heat treatment may be carried out in an oxygen atmosphere. This results in oxide 23 Oxygen is supplied to 0a and oxide 230b, and oxygen deficiency V O This can help reduce the problem. Furthermore, the heat treatment may be carried out under reduced pressure. Alternatively, the heat treatment may be carried out using nitrogen gas or an inert gas. After heat treatment in an atmosphere of oxidizing gas, 10 pp of oxidizing gas is added to replenish the desorbed oxygen. The procedure may be carried out in an atmosphere containing m or more, 1% or more, or 10% or more.

[0233] Next, heat treatment may be performed, and this heat treatment shall be carried out under reduced pressure and exposed to the atmosphere. Alternatively, the oxide film 230C may be formed continuously (see Figure 8). Furthermore, this heat treatment is performed as follows: It is preferable to carry out this process in an oxygen-containing atmosphere. By performing this process, oxide 2 Removes moisture and hydrogen adsorbed on the surface of 30b, and further removes oxide 230a and The water and hydrogen concentrations in oxide 230b can be reduced. Heat treatment temperature The temperature is preferably between 100°C and 400°C, and more preferably between 150°C and 350°C. In this embodiment, the heat treatment is performed at a temperature of 200°C under reduced pressure.

[0234] Here, the oxide film 230C is at least a portion of the side surface of oxide 230a, and oxide 230b Part of the side and part of the top surface, part of the side of oxide 243, part of the side of conductor 242 so as to be in contact with the side surface of insulator 272, the side surface of insulator 273, and the side surface of insulator 280. It is preferable that it be provided. Conductor 242 is an oxide 243, insulator 272, oxide film 23 Being surrounded by 0C suppresses the decrease in conductivity due to oxidation of conductor 242 in subsequent processes. It can be controlled.

[0235] The deposition of oxide film 230C is performed by sputtering, CVD, MBE, PLD, or A This can be done using methods such as LD. The oxide film 230C is composed of atoms of Ga relative to In. The numerical ratio is preferably greater than the atomic ratio of Ga to In in the oxide film 230B. In terms of application methods, the oxide film 230C is produced by sputtering, with In:Ga:Zn= The film is deposited using a target with an atomic ratio of 1:3:4.

[0236] The oxide film 230C may be layered. For example, by sputtering, The film is deposited using a target with an atomic ratio of n:Ga:Zn=4:2:4.1, and then continuously... The film may also be deposited using a target with an atomic ratio of In:Ga:Zn = 1:3:4.

[0237] During the deposition of oxide film 230C, some of the oxygen contained in the sputtering gas becomes oxide 230 a and oxide 230b may be supplied. Alternatively, during the formation of oxide film 230C, In some cases, some of the oxygen contained in the sputtering gas may be supplied to the insulator 280. Therefore, the proportion of oxygen in the sputtering gas of oxide film 230C is preferably 70% or more. It should be 80% or more, more preferably 100%.

[0238] Next, heat treatment may be performed. Furthermore, this heat treatment may be carried out under reduced pressure and exposed to the atmosphere. The deposition of the insulating film 250A may be carried out continuously without interruption. Therefore, it removes moisture and hydrogen adsorbed on the surface of the oxide film 230C, and further oxidation The water and hydrogen concentrations in substance 230a, oxide 230b, and oxide film 230C are reduced. This can be done. The heat treatment temperature is preferably between 100°C and 400°C. In terms of form, the heat treatment temperature is set to 200°C.

[0239] Here, after the insulating film 250A is formed, the microphone is subjected to an oxygen-containing atmosphere and under reduced pressure. Microwave processing may be performed. By performing microwave processing, the electric current from microwave 291 is transmitted. A field is provided to the insulating film 250A, oxide 230a, and oxide 230b, insulating film 250 The VoH in A, oxide 230a, and oxide 230b is separated into Vo and hydrogen. This can be done. At this time, some of the separated hydrogen combines with oxygen to form H2O, and the insulating film 25 It may be removed from 0A, oxide 230a, and oxide 230b. Also, hydrogen Some may be gettered by the conductor 242. In this way, microwave processing By doing so, the hydrogen concentration in insulating film 250A, oxide 230a, and oxide 230b is reduced. This can reduce the amount of VoH in oxide 230a and oxide 230b. After being separated into Vo and hydrogen, the Vo that may exist is repaired by supplying oxygen to it. It can be compensated for.

[0240] Alternatively, heat treatment may be performed while maintaining a reduced pressure state after microwave treatment. By performing this treatment, in insulating film 250A, oxide 230a, and oxide 230b Hydrogen can be efficiently removed. Alternatively, the reduced pressure can be maintained after microwave treatment. The heating step may be repeated multiple times. For example, microwave After performing the process for 10 seconds to 300 seconds, preferably 30 seconds to 60 seconds, a reduced pressure state is created. While maintaining this, add for a time of 30 seconds to 3000 seconds, preferably 300 seconds or close to it. The heat treatment step may be performed 2 to 10 times. By repeating the heat treatment, Further efficient extraction of hydrogen in insulating film 250A, oxide 230a, and oxide 230b. It can be removed. The heat treatment temperature should be between 300°C and 500°C. It is preferable.

[0241] Furthermore, by performing microwave processing, the film quality of the insulating film 250A is modified, water The diffusion of elements, water, or impurities can be suppressed. Therefore, the conductive material 260 Water is released through the insulator 250 by post-processing such as film deposition or heat treatment. This can suppress the diffusion of elements, water, or impurities into the oxide 230 (see Figure 9). (See image). The configuration of the microwave processing unit will be described later.

[0242] Next, conductive films 260Aa and 260Ab are deposited. The conductive film 260Ab is deposited by sputtering, CVD, MBE, PLD, or A This can be done using methods such as LD. For example, the CVD method is preferred. In the application method, a conductive film 260Aa was deposited using the ALD method, and the conductive film was then processed using the CVD method. Deposit 260Ab (see Figure 10).

[0243] Next, by CMP treatment, an oxide film 230C, an insulating film 250A, and a conductive film 260Aa are formed. By polishing the conductive film 260Ab until the insulator 280 is exposed, the oxide 230 c. Form an insulator 250 and a conductor 260 (conductor 260a and conductor 260b) (See Figure 11).

[0244] Next, heat treatment may be performed. In this embodiment, heat treatment is performed at a temperature of 400°C in a nitrogen atmosphere. The process is carried out for 1 hour. This heat treatment reduces the moisture content in the insulators 250 and 280. The temperature and hydrogen concentration can be reduced.

[0245] Next, on the conductor 260, on the oxide 230c, on the insulator 250, and on the insulator 280 , an insulator 282 is formed. The insulator 282 is deposited by sputtering, CVD, MB This can be done using methods such as the E method, PLD method, or ALD method (see Figure 12). Insulator As an insulating film that becomes 282, for example, aluminum oxide can be used by sputtering. It is preferable to form a film. Using the sputtering method, insulator 282 in an oxygen-containing atmosphere By performing this film formation, oxygen can be added to the insulator 280 while the film is being formed. In this case, it is preferable to form the insulator 280 while heating the substrate. Also, the conductor 2 By forming an insulator 282 in contact with the upper surface of 60, insulation is maintained during the subsequent heat treatment. This is preferable because it can suppress the absorption of oxygen from body 280 into conductor 260. It's nice.

[0246] Next, an insulator 283 is deposited on the insulator 282. The insulator 283 is deposited by sputtering. This can be done using methods such as the kerning method, CVD method, MBE method, PLD method, or ALD method. (See Figure 12). Silicon nitride or silicon nitride oxide is deposited as the insulator 283. It is preferable to do so.

[0247] Next, heat treatment may be performed. In this embodiment, heat treatment is performed at a temperature of 400°C in a nitrogen atmosphere. The process is carried out for 1 hour. This heat treatment causes the acid added by the film formation of the insulator 282 to be removed. The element is diffused into the insulator 280, and further, through the oxide 230c, the oxide 230a, and It can be supplied to oxide 230b. Note that this heat treatment is performed after film formation of insulator 283. This procedure is not limited to this; it may also be performed after the deposition of the insulator 282.

[0248] Furthermore, after forming the insulator 283, under an oxygen-containing atmosphere and reduced pressure, the microphone Microwave processing may be performed. By performing microwave processing, the electric current from microwave 292 is transmitted. A field is provided between the insulator 280 and the oxide 230, and in the insulator 280 and the oxide 230 VoH can be separated into Vo and hydrogen. At this time, some of the separated hydrogen acts as an insulator. In some cases, 280 may combine with the oxygen present and be removed as H2O. Also, some of the hydrogen In cases where the conductor 242 is gettered via the insulators 272 and 273, Yes. In this way, by performing microwave treatment, the insulator 280 and oxide 230 The hydrogen concentration can be reduced. In addition, VoH in oxide 230 is separated into Vo and hydrogen. By supplying oxygen to any Vo that may exist after a disruption, Vo can be repaired or replenished. Cut.

[0249] Alternatively, heat treatment may be performed while maintaining a reduced pressure state after microwave treatment. By performing this treatment, hydrogen is efficiently removed from the insulator 280 and the oxide 230. It is possible to perform heat treatment while maintaining a reduced pressure state after microwave treatment. The steps may be repeated multiple times. For example, microwave processing for 10 seconds to 300 seconds. Preferably, after performing the following steps for 30 seconds to 60 seconds, maintain the reduced pressure state for 30 seconds or more. Less than 0 seconds, preferably 30 seconds or more and 300 seconds or less, preferably 300 seconds or near that time The step of performing a heat treatment for a set amount of time may be repeated 2 to 10 times. Repeat the heat treatment. This allows for more efficient removal of hydrogen from the insulator 280 and oxide 230. It is possible to do this. Furthermore, the heat treatment temperature is preferably between 300°C and 500°C.

[0250] Furthermore, by performing microwave treatment, the film quality of the insulator 280 is modified, and hydrogen Therefore, the diffusion of water or impurities can be suppressed. In subsequent processes, such as heat treatment, hydrogen, water, or impurities may enter through the insulator 280. This can suppress diffusion into the oxide 230. Furthermore, a barrier can be formed on the insulator 280. By arranging insulators 282 and 283, which function as insulating films, hydrogen can be filtered in from the outside. This is preferable because it can suppress the entry of water or impurities into transistor 200. (See Figure 12). The configuration of the microwave processing unit will be described later.

[0251] Next, an insulator 274 may be deposited on the insulator 283. The deposition of the insulator 274 is performed by spa This can be done using methods such as tarring, CVD, MBE, PLD, or ALD. can.

[0252] Next, an insulator 281 may be deposited on the insulator 274. The deposition of the insulator 281 is performed by spa This can be done using methods such as tarring, CVD, MBE, PLD, or ALD. Yes, it is possible. As the insulator 281, for example, silicon nitride can be formed by sputtering. It is preferable to form a film.

[0253] Next, insulator 272, insulator 273, insulator 280, insulator 282, insulator 283, insulator The edge 274 and the insulator 281 have openings that reach the conductors 242a and 242b. To form the opening. The opening can be formed using lithography.

[0254] Next, an insulating film to become an insulator 241 is formed, and the insulating film is anisotropically etched to form an insulator. Form 241. The conductive film is deposited by sputtering, CVD, MBE, PL This can be done using the D method or the ALD method, etc. It is preferable to use an insulating film that has the function of suppressing oxygen permeation. For example, the above Similar to the deposition of insulator 283, it is preferable to deposit silicon nitride using the PEALD method. Yes, silicon nitride is preferable because it has high hydrogen blocking properties.

[0255] Furthermore, as an anisotropic etching of the insulating film that becomes the insulator 241, for example, dry etching Methods such as the G method can be used. By providing an insulator 241 on the side wall of the opening, oxygen from the outside can be blocked. This suppresses the transmission of the current and prevents oxidation of the conductors 240a and 240b that are to be formed next. This can be done. Also, impurities such as water and hydrogen can be removed from conductors 240a and 240b. It can prevent it from spreading to the outside.

[0256] Next, conductive films that will become conductor 240a and conductor 240b are formed. Conductive 240a The conductive film that forms the conductor 240b has the function of suppressing the permeation of impurities such as water and hydrogen. It is desirable to have a laminated structure that includes a conductive material. For example, tantalum nitride, titanium nitride, etc. It can be made into a laminate of materials such as tungsten, molybdenum, and copper. Conductor 24 The deposition of conductive films with a conductivity of 0 can be done by sputtering, CVD, MBE, PLD, or AL. This can be done using methods such as the D method.

[0257] Next, by performing CMP treatment, the conductive films that become conductor 240a and conductor 240b are formed. A portion is removed to expose the insulator 281. As a result, the conductive film remains only in the aforementioned opening. This makes it possible to form conductors 240a and 240b with flat upper surfaces. (See Figure 1). Note that this CMP treatment may remove a portion of the insulator 281. .

[0258] Next, a conductive film that will become conductor 246 is formed. The formation of the conductive film that will become conductor 246 is performed by This can be done using methods such as puttering, CVD, MBE, PLD, or ALD. can.

[0259] Next, a conductive film to become conductor 246 is processed by lithography, resulting in conductor 240a. The conductor 246a that is in contact with the upper surface and the conductor 246b that is in contact with the upper surface of the conductor 240b form To accomplish (see Figure 1).

[0260] Based on the above, a semiconductor device having the transistor 200 shown in Figure 1 can be fabricated. As shown in Figures 3 to 12, the semiconductor device manufacturing method shown in this embodiment is used. Thus, transistor 200 can be manufactured.

[0261] According to one aspect of the present invention, a semiconductor device having good electrical characteristics can be provided. Alternatively, according to one aspect of the present invention, a semiconductor device having normally-off electrical characteristics is provided. This is possible. Alternatively, according to one aspect of the present invention, a reliable semiconductor device can be provided. It is possible to provide a semiconductor device with a large on-current according to one aspect of the present invention. To be able to. Or, according to one aspect of the present invention, to provide a semiconductor device having high frequency characteristics. This is possible. Alternatively, according to one aspect of the present invention, a semiconductor device that can be miniaturized or highly integrated is possible. This can provide a semiconductor device with low off-current. Alternatively, according to one aspect of the present invention, a semiconductor device with low off-current. This can provide a semiconductor with reduced power consumption according to one aspect of the present invention. An apparatus can be provided. Alternatively, according to one aspect of the present invention, a highly productive semiconductor device can be provided. We can provide this.

[0262] <Microwave Processing Equipment> The following describes a microwave processing apparatus according to one aspect of the present invention.

[0263] First, Figure 13 shows the configuration of a manufacturing equipment that minimizes the inclusion of impurities during the manufacturing of semiconductor devices and other equipment. This will be explained using Figures 14 and 15.

[0264] Figure 13 schematically shows a top view of the single-wafer multi-chamber manufacturing apparatus 2700. The manufacturing apparatus 2700 includes a cassette port 2761 for housing the substrate and a mechanism for aligning the substrate. An alignment port 2762 is provided, and an atmospheric substrate supply chamber 2701 is provided, and atmospheric substrate From the supply room 2701, the substrate is transported to the atmospheric substrate transport room 2702, and the substrate is brought in. Furthermore, a load lock chamber 2 switches the pressure inside the room from atmospheric pressure to reduced pressure, or from reduced pressure to atmospheric pressure. 703a and the removal of the substrate, and the room pressure is reduced from reduced pressure to atmospheric pressure, or from atmospheric pressure to reduced pressure. The unload lock chamber 2703b switches to pressure, and the transport chamber 27 transports the substrate in a vacuum. 04, chamber 2706a, chamber 2706b, chamber 2706c, It has a chamber 2706d.

[0265] Furthermore, the atmospheric substrate transport chamber 2702 is equipped with a load lock chamber 2703a and an unload lock chamber. It is connected to room 2703b, load lock room 2703a and unload lock room 2703 b is connected to the transport chamber 2704, and the transport chamber 2704 is a chamber 2706a, chamber - Connects to chambers 2706b, 2706c, and 2706d.

[0266] A gate valve GV is provided at the connection part of each chamber, and the atmospheric-side substrate supply chamber 2701 except for the atmospheric-side substrate transfer chamber 2702, each chamber can be independently maintained in a vacuum state . Further, a transfer robot 2763a is provided in the atmospheric-side substrate transfer chamber 2702, and transfer robot 2763b is provided in the transfer chamber 2704. Substrates can be transferred within the manufacturing apparatus 2700 by the transfer robot 2763a and also by the transfer robot 2763b .

[0267] The back pressure (total pressure) of the transfer chamber 2704 and each chamber is, for example, 1×10 -4 Pa or less, preferably 3×10 -5 Pa or less, more preferably 1×10 -5 Pa or less. Also , the partial pressure of gas molecules (atoms) with a mass-charge ratio (m / z) of 18 in the transfer chamber 2704 and each chamber is, for example, 3×10 Pa or less, preferably 1×10 -5 Pa or less, further preferably 3×10 -5 Pa or less. Also, the partial pressure of gas molecules (atoms) with m / z of 28 in the transfer chamber 2704 and each chamber is, for example, 3×10 -6 Pa or less, preferably 1×10 -5 Pa or less, more preferably 3×10 Pa or less. Also, the partial pressure of gas molecules (atoms) with m / z of 44 in the transfer chamber 2704 and each chamber is, for example -5 3×10 -6 Pa or less, preferably 1×10 Pa or less, more preferably 3×10 -5 Pa or less, preferably 1×10 -5 Pa or less, more preferably 3×10 -6 Pa or less

[0268] ​In addition, the total pressure and partial pressure in the transfer chamber 2704 and each chamber can be measured using a mass spectrometer. For example, a quadrupole mass spectrometer (also called Q-mass, e.g., Qulee CGM-051 manufactured by ULVAC CORPORATION) can be used.

[0269] Also, the transfer chamber 2704 and each chamber preferably have a structure with little external or internal leakage. For example, the leak rate of the transfer chamber 2704 and each chamber is 3×10 -6 Pa·m 3 / s or less, preferably 1×10 -6 Pa·m 3 / s or less. Also, for example, the leak rate of gas molecules (atoms) with m / z of 18 is 1×10 -7 Pa ·m 3 / s or less, preferably 3×10 -8 Pa·m 3 / s or less. Also, for example, the leak rate of gas molecules (atoms) with m / z of 28 is 1×10 -5 Pa·m 3 / s or less, preferably 1×10 -6 Pa·m 3 / s or less. Also, for example, the leak rate of gas molecules (atoms) with m / z of 44 is 3×10 Pa·m -6 / s or less, preferably 1×1 3 0 0 -6 Pa·m 3 / s or less.

[0270] Regarding the leak rate, it can be derived from the total pressure and partial pressure measured using the aforementioned mass spectrometer. The leak rate depends on external and internal leakage. External leakage is the inflow of gas from outside the vacuum system due to minute holes, seal defects, etc. Internal leakage is ​The problem is caused by leaks from valves and other partitions within the vacuum system, or by the release of gases from internal components. To keep the leak rate below the above-mentioned values, both external and internal leaks are addressed. We need to take countermeasures.

[0271] For example, the opening and closing parts of the transport chamber 2704 and each chamber are sealed with metal gaskets. That is good. Metal gaskets are made of iron fluoride, aluminum oxide, or chromium oxide. It is preferable to use coated metal. Metal gaskets have better adhesion than O-rings. External leakage can be reduced. Also, by using iron fluoride, aluminum oxide, chromium oxide, etc. By using the passivation of the coated metal, impurities released from the metal gasket are included. This suppresses the release of gases and reduces internal leakage.

[0272] Furthermore, as a component of the manufacturing apparatus 2700, aluminum with low emission gas containing impurities is used. The following are used: um, chromium, titanium, zirconium, nickel, or vanadium. The component may be used after being coated with an alloy containing iron, chromium, and nickel. Alloys containing nickel and other materials are rigid, heat-resistant, and easy to process. Therefore, if the surface irregularities of the material are reduced by polishing or other means to reduce the surface area, the discharge It can reduce gas emissions.

[0273] Alternatively, the components of the aforementioned manufacturing apparatus 2700 may be made from iron fluoride, aluminum oxide, chromium oxide, etc. It may be covered with this.

[0274] The components of the manufacturing apparatus 2700 are preferably made of metal as much as possible, for example, quartz. When installing viewing windows or other components, the surface should be treated with iron fluoride or acid to suppress the release of gases. It is best to coat it thinly with aluminum oxide, chromium oxide, or similar materials.

[0275] The adsorbed material present in the transport chamber 2704 and each chamber is adsorbed to the inner walls, etc. This does not affect the pressure in the transport chamber 2704 and each chamber, however, the pressure in the transport chamber 2704 and each chamber This is the cause of gas release when exhausting the exhaust. Therefore, there is a correlation between the leak rate and the exhaust velocity. Although there is no pump with high exhaust capacity, the conveying chamber 2704 and each chamber are being used. It is important to remove as much of the adsorbed material as possible and to evacuate the system beforehand. To facilitate the detachment of the garment, the transport chamber 2704 and each chamber may be baked. Baking can increase the desorption rate of adsorbed substances by about 10 times. The process should be carried out at a temperature between 100°C and 450°C. At this time, an inert gas is supplied to the transport chamber 2704. When adsorbed substances are removed while being introduced into each chamber, they are difficult to remove by exhaust alone. The desorption rate of water and other substances can be further increased. By heating the mixture to a temperature similar to the rind temperature, the desorption rate of adsorbed substances can be further increased. It is preferable to use a noble gas as the inert gas in this case.

[0276] Alternatively, by introducing an inert gas such as a heated noble gas or oxygen, the transport chamber 270 4 and the pressure in each chamber is increased, and after a certain period of time, the transport chamber 2704 and each chamber are increased again. It is preferable to perform a treatment to exhaust the chamber. By introducing heated gas into the conveying chamber 2704 This allows for the removal of adsorbed material from the transport chamber 2704 and each chamber. - It can reduce impurities present within the material. This process should be repeated between 2 and 30 times. Preferably, it is effective to repeat the process in the range of 5 to 15 times. Specifically, temperature An inert gas or By introducing oxygen, etc., the pressure inside the transport chamber 2704 and each chamber can be raised to 0.1 Pa or higher. 10 kPa or less, preferably 1 Pa or more and 1 kPa or less, more preferably 5 Pa or more and 10 The pressure should be 0 Pa or less, and the period for maintaining the pressure should be between 1 minute and 300 minutes, preferably between 5 minutes and 120 minutes. The following should be done. After that, transport chamber 2704 and each chamber should be kept for 5 minutes to 300 minutes. Preferably, the system is ventilated for a period of 10 minutes to 120 minutes.

[0277] Next, the schematic cross-sectional view of chambers 2706b and 2706c is shown in Figure 14. I will explain using diagrams.

[0278] Chambers 2706b and 2706c are used, for example, to microwave the workpiece. This is a chamber capable of performing the procedure. Note that chamber 2706b and chamber 2 The only difference between the 706c and the 706c is the atmosphere used when performing microwave processing. Since these points are similar, they will be explained together below.

[0279] Chambers 2706b and 2706c are connected to the slot antenna plate 2808, It has a dielectric plate 2809, a substrate holder 2812, and an exhaust port 2819. Outside of chamber 2706b and chamber 2706c, etc., there is a gas supply source 2801 and Lube 2802, high-frequency generator 2803, waveguide 2804, mode converter 2805 , gas tube 2806, waveguide 2807, matching box 2815, high-frequency power supply 2 816, a vacuum pump 2817, and a valve 2818 are provided.

[0280] The high-frequency generator 2803 is connected to the mode converter 2805 via the waveguide 2804. The mode converter 2805 is connected to the slot antenna board 2808 via the waveguide 2807. The slot antenna plate 2808 is positioned in contact with the dielectric plate 2809. The gas supply source 2801 is connected to the mode converter 2805 via valve 2802. And the gas tube passing through the mode converter 2805, waveguide 2807 and dielectric plate 2809 Gas is supplied to chambers 2706b and 2706c by 2806. Furthermore, the vacuum pump 2817 is connected to the valve 2818 and exhaust port 2819. It also has the function of exhausting gases, etc., from bar 2706b and chamber 2706c. The high-frequency power supply 2816 is connected to the substrate holder 2812 via the matching box 2815. It continues.

[0281] The substrate holder 2812 has the function of holding the substrate 2811. For example, the substrate 2811 It has the function of electrostatic chuck or mechanical chuck. Also, from the high-frequency power supply 2816 It functions as an electrode to which power is supplied. It also has a heating mechanism 2813 inside, It has the function of heating plate 2811.

[0282] Vacuum pump 2817 can be used in various ways, such as dry pumps, mechanical booster pumps, etc. On-pump, titanium sublimation pump, cryopump or turbomolecular pump In addition to the vacuum pump 2817, a cryotrap can be used. It is also possible to use a cryopump and cryotrap to efficiently exhaust water. Particularly preferable.

[0283] Furthermore, the heating mechanism 2813 may include, for example, a heating mechanism that uses a resistance heating element to heat. Alternatively, heat can be applied through heat conduction or thermal radiation from a medium such as a heated gas. It may also be used as a heating mechanism. For example, GRTA (Gas Rapid Thermal Annealing) or LRTA (Lamp Rapid Thermal Annealing) RTA (Rapid Thermal Annealing) such as nealing It can be used. GRTA performs heat treatment using high-temperature gas. As for the gas, Activated gases are used.

[0284] Furthermore, the gas supply source 2801 is connected to the purification unit via a mass flow controller. This is also acceptable. The gas used has a dew point of -80°C or lower, preferably -100°C or lower. It is preferable to use oxygen gas, nitrogen gas, and noble gas (such as argon gas). Just be there.

[0285] Examples of dielectric plates 2809 include silicon oxide (quartz) and aluminum oxide (aluminum oxide). You can use na or yttrium oxide (yttria), etc. Also, dielectric plate 280 A further protective layer may be formed on the surface of 9. The protective layer may be magnesium oxide. Um, titanium dioxide, chromium oxide, zirconium oxide, hafnium oxide, tantalum oxide, acid Silicon oxide, aluminum oxide, or yttrium oxide can be used. Dielectric plate 2 809 will be exposed to the particularly high-density region of the high-density plasma 2810, which will be described later. Damage can be mitigated by providing a protective layer. As a result, particles during processing This can help suppress increases in these areas.

[0286] The high-frequency generator 2803 can handle frequencies such as 0.3 GHz to 3.0 GHz and 0.7 GHz. The device generates microwaves at 1.1 GHz or below, or between 2.2 GHz and 2.8 GHz. It has the function of [doing something]. The microwaves generated by the high-frequency generator 2803 are transmitted through the waveguide 2804. It is transmitted to the mode converter 2805 via [a specific method]. In the mode converter 2805, it is transmitted as TE mode. The microwaves are converted to TEM mode. Then, the microwaves are transmitted through waveguide 2807. The signal is transmitted to the slot antenna board 2808 via [a certain method]. The slot antenna board 2808 has multiple Slot holes are provided, and microwaves pass through these slot holes and the dielectric plate 2809. This generates an electric field below the dielectric plate 2809, creating a high-density plasma 2810. This can be achieved. The high-density plasma 2810 is supplied from the gas supply source 2801. Depending on the gas species, ions and radicals exist. For example, oxygen radicals or nitrogen radicals. There are others like Cal.

[0287] At this time, ions and radicals generated in the high-density plasma 2810 cause the substrate 2 The film on 811 can be modified. Furthermore, using the high-frequency power supply 2816, the substrate 2 It may be preferable to apply a bias to the 811 side. For example, the high-frequency power supply 2816 has RF (Radio Frequencies) with frequencies such as 13.56MHz and 27.12MHz. A power supply (ncy) can be used. By applying a bias to the substrate side, high-density plasma 28 This allows ions in 10 to efficiently reach deep into openings such as films on the substrate 2811. Cut.

[0288] For example, in chamber 2706b, oxygen is introduced from the gas supply source 2801 to achieve high density. Oxygen radical treatment is performed using plasma 2810, and in chamber 2706c, gas By introducing nitrogen from source 2801, nitrogen radicals can be produced using high-density plasma 2810. It can perform the process.

[0289] Next, the schematic cross-sectional view of chambers 2706a and 2706d is shown in Figure 15. I will explain using diagrams.

[0290] Chambers 2706a and 2706d are, for example, used to irradiate the workpiece with electromagnetic waves. This is a chamber capable of performing the following. Note that chamber 2706a and chamber 27 The only difference between 06d and this model is the type of electromagnetic wave used. Other components are the same. Since there are many points, we will explain them together below.

[0291] Chambers 2706a and 2706d are connected to one or more lamps 2820 and It has a substrate holder 2825, a gas inlet 2823, and an exhaust port 2830. Outside chambers 2706a and 2706d, etc., there is a gas supply source 2821 and A valve 2822, a vacuum pump 2828, and a valve 2829 are provided.

[0292] The gas supply source 2821 is connected to the gas inlet 2823 via valve 2822. The empty pump 2828 is connected to the exhaust port 2830 via valve 2829. Lamp 2 820 is positioned opposite the board holder 2825. The board holder 2825 is It has the function of holding the substrate 2824. In addition, the substrate holder 2825 has a heating mechanism 2 inside. It has 826 and has the function of heating the substrate 2824.

[0293] Lamp 2820, for example, has the function of emitting electromagnetic waves such as visible light or ultraviolet light. A light source that meets the following criteria should be used. For example, wavelengths between 10 nm and 2500 nm, and above 500 nm. Emitting electromagnetic waves with peaks below 2000 nm, or between 40 nm and 340 nm. A light source with the necessary functionality should be used.

[0294] For example, lamp 2820 can be a halogen lamp, a metal halide lamp, or a xenon lamp. - such as clamps, carbon arc lamps, high-pressure sodium lamps or high-pressure mercury lamps A light source can be used.

[0295] For example, some or all of the electromagnetic waves emitted from the lamp 2820 reach the substrate 2824. By being absorbed, the film on the substrate 2824 can be modified. For example, the generation of defects. Alternatively, it can be reduced or impurities removed. Note that this can be done while heating the substrate 2824. This allows for efficient generation or reduction of defects, or removal of impurities.

[0296] Alternatively, for example, electromagnetic waves emitted from lamp 2820 may affect the substrate holder 2825. The substrate 2824 may be heated by generating heat. In that case, the inside of the substrate holder 2825 will be heated. It is not necessary to have mechanism 2826.

[0297] For vacuum pump 2828, refer to the description for vacuum pump 2817. Also, the heating mechanism. 2826 refers to the description of the heating mechanism 2813. Also, the gas supply source 2821 is See the description for gas supply source 2801.

[0298] By using the above manufacturing equipment, it is possible to suppress the contamination of the workpiece with impurities while modifying the film, etc. This becomes possible.

[0299] The configurations and methods shown in this embodiment can be appropriately combined with the configurations and methods shown in other embodiments. They can be used together.

[0300] (Embodiment 2) In this embodiment, one form of a semiconductor device will be described with reference to Figures 16 and 17.

[0301] [Storage device 1] Figure 16 shows an example of a semiconductor device (memory device) using a capacitive element, which is one aspect of the present invention. As shown, in one aspect of the present invention, a semiconductor device is provided in which transistor 200 is above transistor 300. The capacitive element 100 is provided above the transistors 300 and 200. It is provided. Note that the transistor 200 is the transistor described in the previous embodiment. The Sta200 can be used.

[0302] Transistor 200 is a transistor in which a channel is formed in a semiconductor layer having an oxide semiconductor. It is a transistor. Transistor 200 is used in memory devices because it has a low off-current. This makes it possible to retain memory content for a long period of time. In other words, refresh Because it does not require any operation, or because the refresh operation is performed very infrequently, the memory Power consumption can be significantly reduced.

[0303] In the semiconductor device shown in Figure 16, wiring 1001 is connected to the source and electrical source of transistor 300. The wiring 1002 is electrically connected to the drain of transistor 300. Furthermore, wiring 1003 is electrically connected to either the source or the drain of transistor 200. The wiring 1004 is then electrically connected to the first gate of transistor 200, and the wiring 1 006 is electrically connected to the second gate of transistor 200. And, The gate of transistor 300, and the other of the source and drain of transistor 200, The wiring 1005 is electrically connected to one of the electrodes of the capacitance element 100, and the wiring 1005 is connected to the electrode of the capacitance element 100. It is electrically connected to the other side.

[0304] Furthermore, the memory device shown in Figure 16, when arranged in a matrix, allows the memory cell array to function as a matrix. It can be configured.

[0305] <Transistor 300> The transistor 300 is provided on the substrate 311 and has a conductor 316 that functions as a gate. , an insulator 315 that functions as a gate insulator, and a semiconductor region 31 which is part of the substrate 311 3, and a low-resistance region 314a that functions as a source region or drain region, and low It has a resistive region 314b. Transistor 300 is either a p-channel or n-channel type. Any type is acceptable.

[0306] Here, the transistor 300 shown in Figure 16 is in the semiconductor region 313 where the channel is formed. A portion of the substrate 311 has a convex shape. In addition, the side and top surfaces of the semiconductor region 313 are made of an insulating material. The conductive material 316 is provided so as to cover the edge 315. Materials that adjust the work function may be used. Such a transistor 300 is on a semiconductor substrate. It is also called a FIN-type transistor because it utilizes a protruding part. Furthermore, it may have an insulator that functions as a mask for forming the protrusion. This example shows a case where a protrusion is formed by processing a part of a semiconductor substrate, but when processing an SOI substrate... A semiconductor film having a convex shape may be formed.

[0307] Note that the transistor 300 shown in Figure 16 is just one example, and its structure is not limited to that example. A suitable transistor should be used depending on the configuration and driving method.

[0308] <Capacitive element 100> The capacitive element 100 is located above the transistor 200. The capacitive element 100 is the first A conductor 110 that functions as an electrode, a conductor 120 that functions as a second electrode, and It has an insulator 130 that functions as a dielectric.

[0309] Furthermore, for example, the conductor 112 and the conductor 110 provided on the conductor 246 are formed simultaneously. This is possible. Furthermore, the conductor 112 is connected to the capacitive element 100, the transistor 200, and It functions as a plug or wire that electrically connects to transistor 300.

[0310] In Figure 16, the conductors 112 and 110 are shown as single-layer structures, but this configuration is not limited to this. It is not specified, and may be a laminated structure of two or more layers. For example, a conductor with barrier properties and a highly conductive material A conductor with barrier properties and a conductor with high conductivity are bonded to each other. A highly conductive material may be formed.

[0311] Furthermore, the insulator 130 may be, for example, silicon oxide, silicon oxide nitride, or silicon oxide nitride. Silicon nitride, aluminum oxide, aluminum oxide nitride, aluminum oxide nitride, nitrile Aluminum oxide, hafnium oxide, hafnium oxide nitride, hafnium oxide nitride, hafnium nitride It can be made using materials such as nium, and can be constructed in layers or as a single layer.

[0312] For example, the insulator 130 may contain a material with high dielectric strength, such as silicon oxynitride, and a high dielectric strength material. It is preferable to use a laminated structure with a high-k material. With this configuration, the capacity element Child 100 has a high dielectric constant (high-k) insulator, which ensures sufficient capacitance. By having an insulator with high dielectric strength, the dielectric strength is improved, and the electrostatic discharge of the capacitive element 100 is reduced. It can suppress damage.

[0313] Furthermore, as an insulator of high-dielectric constant (high-k) materials (materials with a high relative permittivity), Having gallium, hafnium oxide, zirconium oxide, aluminum and hafnium Oxides, aluminum and hafnium-containing oxides and nitrides, silicon and hafnium Oxides having silicon and hafnium, or silicon and ha Examples include nitrides containing humium.

[0314] On the other hand, materials with high dielectric strength (materials with low dielectric constant) include silicon oxide and nitrogen oxide. Silicon oxide, silicon nitride, silicon nitride, silicon oxide with added fluorine, carbon Silicon oxide with added carbon and nitrogen, silicon oxide with voids It may be made of concrete or resin.

[0315] <Wiring layer> Between each structure, there is a wiring layer containing interlayer membranes, wiring, and plugs. This is also possible. Furthermore, multiple wiring layers can be provided depending on the design. Here, the plug In the case of a conductor that functions as wiring, where multiple structures are grouped together and assigned the same code, There is a possibility of this occurring. Furthermore, in this specification, etc., the wiring and the plug that electrically connects to the wiring are integrated. It may also be an object. That is, when a part of the conductor functions as wiring, and the conductor Some parts may function as plugs.

[0316] For example, on transistor 300, there are insulators 320, 322, and an insulator as interlayer films. The edge body 324 and the insulator 326 are arranged in order in stacked layers. Also, the insulator 320, Insulators 322, 324, and 326 contain capacitive elements 100 or transients Conductors 328 and 330, etc., which are electrically connected to the sta 200, are embedded within. Furthermore, conductors 328 and 330 function as plugs or wiring.

[0317] Furthermore, the insulator, which functions as an interlayer film, acts as a planarizing film that covers the uneven shape beneath it. It may function. For example, the upper surface of the insulator 322 may be chemically and mechanically polished to improve flatness. The surface may be flattened by a flattening treatment such as the CMP method.

[0318] A wiring layer may be provided on the insulator 326 and the conductor 330. For example, as shown in Figure 16. Insulators 350, 352, and 354 are arranged in a stacked manner. Furthermore, a conductor 356 is formed on insulators 350, 352, and 354. Conductor 356 functions as a plug or wiring.

[0319] Similarly, insulators 210, 212, 214, and 216 are conductive Body 218 and the conductor (conductor 205) that constitutes the transistor 200 are embedded. It is present. Furthermore, the conductor 218 is electrically connected to the capacitive element 100 or the transistor 300. It functions as a connecting plug or wiring. Furthermore, the conductor 120 and the insulator An insulator 150 is provided above 130.

[0320] Here, similar to the insulator 241 shown in the above embodiment, a conductor 2 that functions as a plug An insulator 217 is provided in contact with the side surface of 18. The insulator 217 is in contact with the insulator 210, insulator 212, insulator 214, and insulator 216 are provided in contact with the inner wall of the opening formed therein. In other words, insulator 217 is connected to conductor 218, insulator 210, insulator 212, insulator It is provided between 214 and the insulator 216. Note that the conductor 205 is conductor 2 Since it can be formed in parallel with 18, the insulator 217 is in contact with the side surface of the conductor 205. It may also be formed.

[0321] Examples of insulators 217 include silicon nitride, aluminum oxide, or silicon nitride oxide. An insulator such as Ricon can be used. Insulator 217 is insulator 212, insulator 214, Since it is installed in contact with the insulator 222, water can enter from the insulator 210 or insulator 216, etc. Alternatively, it suppresses the incorporation of impurities such as hydrogen into the oxide 230 through the conductor 218. This is possible. In particular, silicon nitride is preferred because it has high blocking properties for hydrogen. Furthermore, oxygen contained in the insulator 210 or insulator 216 is absorbed by the conductor 218. This can prevent it.

[0322] The insulator 217 can be formed in the same manner as the insulator 241. For example, PEA A silicon nitride film is deposited using the LD method, and the conductive material 356 is reached using anisotropic etching. You just need to form an opening.

[0323] Insulators that can be used as interlayer films include insulating oxides, nitrides, and acids. Examples include nitrides, nitride oxides, metal oxides, metal oxide nitrides, and metal nitride oxides.

[0324] For example, by using a material with a low dielectric constant for the insulator that functions as an interlayer film, wiring The parasitic capacitance that occurs between them can be reduced. Therefore, depending on the function of the insulator, the material You should choose this option.

[0325] For example, insulators 150, 210, 352, and 354 have a ratio It is preferable to have an insulator with a low dielectric constant. For example, the insulator may be silicon nitride. , nitride silicon, fluorine-added silicon oxide, carbon-added silicon oxide, carbon and silicon oxide with nitrogen added, silicon oxide having voids, or resins, etc. This is preferable. Alternatively, the insulator may be silicon oxide, silicon oxide nitride, or silicon oxide nitride Cone, silicon nitride, silicon oxide with added fluorine, silicon oxide with added carbon, carbon Lamination of silicon oxide with added elements and nitrogen or porous silicon oxide with resin It is preferable that it has a structure. Silicon oxide and silicon oxide-nitride are thermally stable. Therefore, by combining it with resin, a thermally stable laminated structure with a low dielectric constant is achieved. This can be done. Examples of resins include polyester, polyolefin, and polyamide (nylon Examples include ramid, polyimide, polycarbonate, or acrylic.

[0326] Furthermore, transistors using oxide semiconductors suppress the permeation of impurities such as hydrogen and oxygen. By surrounding the transistor with an insulator that has a controlling function, the electrical characteristics of the transistor are stabilized. Therefore, hydrogen, etc. can be present in insulators 214, 212, and 350, etc. An insulator that has the function of suppressing the permeation of impurities and oxygen should be used.

[0327] Examples of insulators that have the function of suppressing the permeation of impurities such as hydrogen and oxygen include, Boron, carbon, nitrogen, oxygen, fluorine, magnesium, aluminum, silicon, phosphorus, salt Element, argon, gallium, germanium, yttrium, zirconium, lanthanum, neo An insulator containing zym, hafnium, or tantalum may be used in a single layer or in a multilayer configuration. Specifically, as an insulator that has the function of suppressing the permeation of impurities such as hydrogen and oxygen, Aluminum oxide, magnesium oxide, gallium oxide, germanium oxide, yttrium oxide Umium, zirconium oxide, lanthanum oxide, neodymium oxide, hafnium oxide, or tan oxide Metal oxides such as tar, silicon nitride, or silicon nitride can be used. .

[0328] Conductors that can be used in wiring and plugs include aluminum, chromium, copper, and silver. Gold, platinum, tantalum, nickel, titanium, molybdenum, tungsten, hafnium, vanilla Dium, niobium, manganese, magnesium, zirconium, beryllium, indium, Materials containing one or more metallic elements selected from thenium and others can be used. Semiconductors with high electrical conductivity, such as polycrystalline silicon containing impurity elements like nitrates, Silicides such as nickel silicide may also be used.

[0329] For example, conductor 328, conductor 330, conductor 356, conductor 218, and conductor 1 12, etc., are metal materials, alloy materials, metal nitride materials, or formed from the above materials. Conductive materials such as metal oxide materials can be used in a single layer or in a laminated form. Heat resistance and It is preferable to use high-melting-point materials such as tungsten or molybdenum that can achieve both conductivity and electrical conductivity. Tungsten is preferable. Alternatively, a low-resistance conductive material such as aluminum or copper may be used. It is preferable to form it with a material. By using a low-resistance conductive material, the wiring resistance can be reduced. It is possible.

[0330] <Wiring or plugs in layers containing oxide semiconductors> Furthermore, when an oxide semiconductor is used for transistor 200, excess near the oxide semiconductor An insulator having an oxygen region may be provided. In that case, the insulator having the excess oxygen region A barrier-type insulator is provided between the insulator having the excess oxygen region and the conductor. It is preferable to provide one.

[0331] For example, in Figure 16, insulators 224 and 280 have excess oxygen, and conductor 2 It is preferable to provide an insulator 241 between 40 and 40. Insulator 241, insulator 222, insulator 2 72, and the insulator 273 are provided in contact with each other, so that the insulator 224 and the transient The STA200 can be constructed to be sealed with a barrier-type insulator. Furthermore, it is preferable that the insulator 241 is in contact with a part of the insulator 280. By extending to the insulator 274, the diffusion of oxygen and impurities can be further suppressed. ru.

[0332] In other words, by providing the insulator 241, the excess insulation of the insulators 224 and 280 is eliminated. This can suppress the absorption of oxygen by the conductor 240. Also, the insulator 241 By having this, the impurity hydrogen diffuses to the transistor 200 via the conductor 240. This can suppress the action.

[0333] Furthermore, the insulator 241 is designed to suppress the diffusion of impurities such as water or hydrogen, and oxygen. It is preferable to use an insulating material that has the function of [doing something]. For example, silicon nitride, silicon nitride oxide, It is preferable to use aluminum oxide or hafnium oxide. In particular, silica nitride N is preferred because it has high blocking properties for hydrogen. In addition, other options include, for example, magnesium oxide. Nesium, gallium oxide, germanium oxide, yttrium oxide, zirconium oxide, acid Metal oxides such as lanthanum oxide, neodymium oxide, or tantalum oxide can be used. ru.

[0334] The above is a description of the example configuration. By using this configuration, a tortoise having an oxide semiconductor can be constructed. In semiconductor devices using transistors, the aim is to suppress fluctuations in electrical characteristics and improve reliability. It can be increased. Alternatively, a transistor having an oxide semiconductor with a large on-current can be used. It can be provided. Or, a transistor having an oxide semiconductor with a low off-current. We can provide it. Or, we can provide a semiconductor device with reduced power consumption. ru.

[0335] [Storage device 2] Figure 17 shows an example of a storage device using a semiconductor device according to one aspect of the present invention. The memory device shown is transistor 200, transistor 300, and shown in Figure 16. In addition to a semiconductor device having a quantitative element 100, it also has a transistor 400.

[0336] Transistor 400 can control the second gate voltage of transistor 200. For example, the first gate and second gate of transistor 400 are connected to the source and diode. Connect the source of transistor 400 to the second gate of transistor 200. The configuration is as follows. When the negative potential of the second gate of transistor 200 is maintained in this configuration, The voltage between the first gate and source of the transistor 400 and the voltage between the second gate and source The voltage becomes 0V. In transistor 400, the second gate voltage and the first gate voltage Because the drain current is very small when the voltage is 0V, transistor 200 and transistor Even without supplying power to transistor 400, the negative potential of the second gate of transistor 200 can be maintained for an extended period. This can be maintained for a period of time. This allows transistors 200 and 400 A storage device having this feature can retain its contents for a long period of time.

[0337] Therefore, in Figure 17, wiring 1001 is electrically connected to the source of transistor 300. Furthermore, wiring 1002 is electrically connected to the drain of transistor 300. Wiring 1003 is electrically connected to either the source or drain of transistor 200. Wire 1004 is electrically connected to the gate of transistor 200, and wire 1006 is connected to the transistor It is electrically connected to the back gate of transistor 200. And transistor 300 The gate, and the other of the source and drain of transistor 200, are of the capacitive element 100. The wiring 1005 is electrically connected to one electrode and to the other electrode of the capacitive element 100. It is connected. Wiring 1007 is electrically connected to the source of transistor 400, and wiring 1008 is electrically connected to the gate of transistor 400, and wiring 1009 is connected to the transistor Electrically connected to the back gate of transistor 400, wiring 1010 is the drain of transistor 400. It is electrically connected to the input. Here, wiring 1006, wiring 1007, wiring 1008, And wiring 1009 is electrically connected.

[0338] Furthermore, the storage device shown in Figure 17 is arranged in a matrix, similar to the storage device shown in Figure 16. This allows for the construction of a memory cell array. Note that one transistor 40 0 can control the second gate voltage of multiple transistors 200. Therefore, it is preferable to use fewer transistors 400 than transistors 200.

[0339] <Transistor 400> Transistor 400 is formed on the same layer as transistor 200 and is manufactured in parallel. It is a transistor that can be manufactured. Transistor 400 is the first gate. Conductive conductors 460 (conductors 460a and 460b), and a second gate A functional conductor 405, an insulator 222 that functions as a gate insulating layer, and an insulator 45 0, an oxide 430c having a channel-forming region, and a conductor 442 that functions as a source. a, oxide 443a, oxide 431a, and oxide 431b, and function as drains Conductor 442b, oxide 443b, oxide 432a, and oxide 432b, plug Conductors 440 (conductors 440a and conductors 440b) that function as, and conductors Insulator 441 (insulator 441a, and insulator 44) functions as a barrier dielectric film of 440. 1b) and .

[0340] In transistor 400, conductor 405 is in the same layer as conductor 205. Material 431a and oxide 432a are in the same layer as oxide 230a, and oxide 431 b, and oxide 432b are in the same layer as oxide 230b. Conductor 442 is conductive Body 242 is in the same layer. Oxide 443 is in the same layer as oxide 243. Oxide 4 30c is the same layer as oxide 230c. Insulator 450 is the same layer as insulator 250. Conductor 460 is in the same layer as conductor 260. Conductor 440 is in the same layer as conductor 24. It is the same layer as 0. Insulator 441 is the same layer as insulator 241.

[0341] Furthermore, structures formed in the same layer can be formed simultaneously. For example, oxide 4 30c can be formed by processing an oxide film that becomes oxide 230c.

[0342] Oxide 430c, which functions as the active layer of transistor 400, is the same as oxide 230, etc. Thus, oxygen deficiency is reduced, and impurities such as hydrogen or water are reduced. The threshold voltage of transistor 400 is set to greater than 0V, reducing the off-current and the second gate The drain current can be made very small when the gate voltage and the first gate voltage are 0V. ru.

[0343] <Dicing line> In the following, by dividing a large-area substrate into semiconductor elements, multiple semiconductor devices are created. Dicing lines (scribe lines, division lines) are provided when extracting chips. This explains the cutting line (which may also be called the cutting line). For example, the method of division is... First, grooves (dicing lines) are formed in the substrate to divide the semiconductor elements, In some cases, the semiconductor device may be cut during grinding, resulting in its division into multiple semiconductor devices.

[0344] Here, for example, as shown in Figure 17, the region where the insulator 272 and the insulator 222 are in contact. It is preferable to design it so that it becomes a dicing line. In other words, multiple transistors A memory cell having 200, and a dicing laser provided on the outer edge of the transistor 400 An opening is provided in the insulator 224 near the region that will be in. Also, the side of the insulator 224 An insulator 272 is provided to cover it.

[0345] In other words, at the opening provided in the insulator 224, the insulator 222 and the insulator 272 They come into contact. For example, in this case, the insulator 222 and the insulator 272 are made of the same material and using the same method. They may be formed by the same material and method. Insulators 222 and 272 are provided by the same material and method. This can improve adhesion. For example, aluminum oxide is preferred. It's nice.

[0346] With this structure, the insulator 222 and the insulator 272, the insulator 224, the transistor It can enclose transistors 200 and 400. Insulator 222, and insulation Body 272 has the function of suppressing the diffusion of oxygen, hydrogen, and water, therefore, in this embodiment By dividing the substrate for each circuit region where the semiconductor element shown is formed, multiple chips can be formed. Even after processing, impurities such as hydrogen or water can enter from the side of the divided substrate, causing problems. This prevents the substance from spreading to transistor 200 and transistor 400.

[0347] Furthermore, due to this structure, excess oxygen in the insulator 224 is transferred to the insulator 272 and the insulator 222 This prevents diffusion to the outside via the insulator 224. Therefore, excess oxygen in the insulator 224 Efficiently forms a channel in transistor 200 or transistor 400. It is supplied to the oxide. With this oxygen, transistor 200 or transistor 400 This can reduce the oxygen vacancy in the oxide where channels are formed. The oxide in which the channel is formed in transistor 200 or transistor 400 This allows for the creation of oxide semiconductors with low defect level density and stable properties. This suppresses fluctuations in the electrical characteristics of the transistor 200 or transistor 400, and also improves reliability. It can improve sexual performance.

[0348] The configurations, methods, etc. shown in this embodiment may differ from the configurations, structures, methods, etc. shown in other embodiments. They can be used in combination as appropriate.

[0349] (Embodiment 3) In this embodiment, using Figures 18 and 19, we will illustrate one aspect of the present invention in which an oxide is semi-oxidized. The transistor used as the conductor (which may be referred to as an OS transistor below), and the capacitance element This section explains the storage device to which the child is applied (hereinafter sometimes referred to as the OS memory device). The OS memory device includes at least a capacitive element and an OS transistor that controls the charging and discharging of the capacitive element. This is a memory device that has a zistor. The off-current of the OS transistor is extremely small, so the OS Memory devices possess excellent retention characteristics and can function as non-volatile memory.

[0350] <Example of a storage device configuration> Figure 18A shows an example of the configuration of the OS memory device. The storage device 1400 is connected to peripheral circuit 141 1, and a memory cell array 1470. Peripheral circuit 1411 is a row circuit 1420, It has a column circuit 1430, an output circuit 1440, and a control logic circuit 1460.

[0351] The column circuit 1430 includes, for example, a column decoder, a precharge circuit, a sense amplifier, and a writing It has a power supply circuit, etc. The precharge circuit has the function of precharging the wiring. The amplification amplifier has the function of amplifying the data signal read from the memory cell. The above wiring is connected to the memory cells of the memory cell array 1470. More details will be provided later. The amplified data signal is output via the output circuit 1440. It is output to the outside of the storage device 1400 as RDATA. Also, the row circuit 1420 is, for example It has a row decoder, a word line driver circuit, etc., and can select the row to access. ru.

[0352] The storage device 1400 receives a low power supply voltage (VSS) from an external source as the power supply voltage, and peripheral circuits 14 The high power supply voltage (VDD) for 11 and the high power supply voltage (VIL) for the memory cell array 1470 are It is supplied. In addition, the storage device 1400 contains control signals (CE, WE, RE) and address signals. The address signal ADDR and the data signal WDATA are input from an external source. The address signal ADDR is the line The WDATA signal is input to the decoder and column decoder, and then input to the writing circuit.

[0353] The control logic circuit 1460 processes external input signals (CE, WE, RE). It then generates control signals for the row decoder and column decoder. CE is the chip enable signal. WE is the write enable signal, and RE is the read enable signal. The signals processed by the control logic circuit 1460 are not limited to these. If necessary, you can input other control signals.

[0354] The memory cell array 1470 consists of multiple memory cells MC arranged in a matrix, and multiple It has the wiring. Note that the wiring connecting the memory cell array 1470 and the row circuit 1420 The number of lines is determined by the configuration of the memory cell MC, the number of memory cell MCs in a single row, and other factors. Also, the number of wires connecting the memory cell array 1470 and the column circuit 1430 is noted. This is determined by factors such as the configuration of the recell MC and the number of memory cell MCs in each row.

[0355] In Figure 18A, the peripheral circuit 1411 and the memory cell array 1470 are on the same plane. Although examples of how to form it have been shown, this embodiment is not limited to this. For example, As shown in Figure 18B, the memory cell array 1470 is superimposed on a portion of the peripheral circuit 1411. It may be provided in such a way. For example, so as to overlap below the memory cell array 1470, A configuration that includes a sense amplifier is also possible.

[0356] Figure 19 illustrates an example of a memory cell configuration that can be applied to the above-mentioned memory cell MC.

[0357] [DOSRAM] Figures 19A to 19C show examples of circuit configurations for DRAM memory cells. And, DRAM using a 1OS transistor 1 capacitance element type memory cell is called DOSRAM. (Dynamic Oxide Semiconductor Random Acce It is sometimes called ss Memory. As shown in Figure 19A, memory cell 1471 is a tra It has a transistor M1 and a capacitive element CA. Note that the transistor M1 has a gate (flow It has a front gate (sometimes called a back gate) and a back gate.

[0358] The first terminal of transistor M1 is connected to the first terminal of capacitive element CA, and transistor M The second terminal of 1 is connected to wiring BIL, and the gate of transistor M1 is connected to wiring WOL. Next, the back gate of transistor M1 is connected to wiring BGL. Capacitive element C The second terminal of A is connected to wiring CAL.

[0359] Wiring BIL functions as a bit line, and wiring WOL functions as a word line. CAL functions as wiring for applying a predetermined potential to the second terminal of the capacitive element CA. During data writing and reading, a low-level potential is applied to the wiring CAL. It is preferable to do so. Wiring BGL is used to apply potential to the back gate of transistor M1. It functions as wiring. By applying an arbitrary potential to wiring BGL, the transistor The threshold voltage of M1 can be increased or decreased.

[0360] Furthermore, the memory cell MC is not limited to memory cell 1471, and the circuit configuration can be changed. This is possible. For example, a memory cell MC can be a memory cell 1472 as shown in Figure 19B. The back gate of transistor M1 is connected to the WOL wiring instead of the BGL wiring. It is also possible to do so. For example, the memory cell MC is a memory cell 1473 as shown in Figure 19C. Uni, a single-gate transistor, that is, a transistor without a back gate. It may also be a memory cell composed of M1.

[0361] When the semiconductor device shown in the above embodiment is used as a memory cell 1471, etc., a transistor Transistor 200 is used as M1, and capacitive element 100 is used as capacitive element CA. This can be done. By using an OS transistor as transistor M1, the transistor The leakage current of the M1 can be made very low. In other words, the written data can be transmitted Because it can be retained for a long time by ZISTA M1, the frequency of memory cell refresh is reduced. This can reduce the amount of memory required. Furthermore, it eliminates the need for memory cell refresh operations. It can be done. Also, because the leakage current is very low, memory cell 1471, memory cell 1472, The memory cell 1473 can hold multi-level data or analog data.

[0362] Furthermore, in DOSRAM, as described above, overlaps below the memory cell array 1470 As shown, by using a configuration that includes a sense amplifier, the bit line can be shortened. This reduces the bit line capacitance and thus the memory cell retention capacity.

[0363] [NOSRAM] Figures 19D to 19H show the rotation of a gain cell type memory cell with two transistors and one capacitance element. An example of a circuit configuration is shown. As shown in Figure 19D, the memory cell 1474 is connected to transistor M2 and It has a transistor M3 and a capacitive element CB. Transistor M2 is the front gate It has a gate (sometimes simply called a gate) and a back gate. In this specification, etc., A memory device having a gain cell type memory cell using an OS transistor in the transistor M2. , NOSRAM(Nonvolatile Oxide Semiconductor It is sometimes referred to as RAM.

[0364] The first terminal of transistor M2 is connected to the first terminal of the capacitive element CB, and transistor M The second terminal of 2 is connected to the wiring WBL, and the gate of transistor M2 is connected to the wiring WOL. Next, the back gate of transistor M2 is connected to wiring BGL. Capacitive element C The second terminal of B is connected to wiring CAL. The first terminal of transistor M3 is connected to wiring R. The second terminal of transistor M3 is connected to BL, and the wiring SL is connected to transistor M The gate of 3 is connected to the first terminal of the capacitive element CB.

[0365] Wiring WBL functions as the write bit line, and wiring RBL functions as the read bit line. The wiring WOL functions as a word line. The wiring CAL is the second of the capacitive element CB. It functions as wiring to apply a predetermined potential to the terminal. When writing data, data retention During the process, when reading data, a low-level potential is applied to the wiring CAL. Preferred. Wiring BGL is wiring for applying potential to the back gate of transistor M2. It functions as follows: By applying an arbitrary potential to the wiring BGL, the transistor M2 The threshold voltage can be increased or decreased.

[0366] Furthermore, the memory cell MC is not limited to memory cell 1474, and the circuit configuration can be changed as appropriate. This is possible. For example, the memory cell MC is like the memory cell 1475 shown in Figure 19E. In this configuration, the back gate of transistor M2 is connected to the WOL wiring instead of the BGL wiring. It may also be made into a memory cell MC, as shown in Figure 19F, memory cell 1476 As shown above, a single-gate transistor, that is, a transistor without a back gate A memory cell composed of sta M2 may also be used. For example, the memory cell MC is shown in Figure 1. As shown in memory cell 1477 in 9G, the wiring WBL and wiring RBL are combined into a single wiring BIL. It would also be acceptable to use a structure that summarizes the information in this way.

[0367] When the semiconductor device shown in the above embodiment is used as a memory cell 1474, etc., a transistor Transistor 200 is used as M2, and transistor 300 is used as transistor M3. Capacitive element 100 can be used as the capacitive element CB. Transistor M2 By using an OS transistor, the leakage current of transistor M2 can be made very low. This allows the written data to be retained for a long time by transistor M2. This allows for a reduction in the frequency of memory cell refreshes. Furthermore, it eliminates the need for memory cell refresh operations. Also, the leakage current is very low. Because the temperature is low, the memory cell 1474 can store multi-level data or analog data. The same applies to memory cells 1475 to 1477.

[0368] Note that transistor M3 is a transistor having silicon in the channel formation region (hereinafter (Sometimes called Si transistors) The conductivity type of Si transistor is It may be an n-channel type or a p-channel type. Si transistors are OS transistors In some cases, the field-effect mobility is higher than that of a transistor. Therefore, readout transistor A Si transistor may be used as transistor M3, which functions as a transistor. By using a Si transistor for transistor M3, a transistor can be stacked on top of transistor M3. Since a converter M2 can be provided, the occupied area of ​​the memory cell is reduced, and the storage device is high It is possible to integrate the resources.

[0369] Also, transistor M3 may be an OS transistor. Transistors M2, M3 When OS transistors are used, the memory cell array 1470 uses only n-type transistors. It can be used to construct a circuit.

[0370] Figure 19H also shows an example of a gain cell type memory cell with 3 transistors and 1 capacitance element. The memory cell 1478 shown in Figure 19H consists of transistors M4 to M6 and a capacitive element C. It has C. Capacitive elements CC are provided as appropriate. Memory cell 1478 has wiring BIL, RW Electrically connected to L, WWL, BGL, and GNDL. Wiring GNDL is low level. This is a wiring that provides a potential. Note that memory cell 1478 is replaced with wiring R instead of wiring BIL. BL and WBL may be electrically connected.

[0371] Transistor M4 is an OS transistor with a back gate, and the back gate is It is electrically connected to wiring BGL. Note that the back gate and gate of transistor M4 They may be electrically connected to each other. Alternatively, transistor M4 may have a back gate. It's not necessary.

[0372] Note that transistors M5 and M6 are either n-channel Si transistors or p-channel Si transistors, respectively. A channel-type Si transistor is also acceptable. Alternatively, transistors M4 to M6 can be OS transistors. It can also be a stapler; in this case, the memory cell array 1470 is rotated using only n-type transistors. A path can be constructed.

[0373] When the semiconductor device shown in the above embodiment is used as the memory cell 1478, transistor M Transistor 200 is used as transistor 4, and transistors M5 and M6 are transistor 300. Using this, the capacitive element 100 can be used as the capacitive element CC. Transistor M4 and By using an OS transistor, the leakage current of transistor M4 is reduced to a very low level. It can be done.

[0374] Note that the peripheral circuit 1411 and memory cell array 1470 shown in this embodiment, etc. The configuration is not limited to those described above. These circuits, and the connections to them The arrangement or function of lines, circuit elements, etc., may be changed, deleted, or added as needed. stomach.

[0375] The configurations, methods, etc. shown in this embodiment may differ from the configurations, structures, methods, etc. shown in other embodiments. They can be used in combination as appropriate.

[0376] (Embodiment 4) In this embodiment, Figure 20 shows a chip 1200 on which the semiconductor device of the present invention is mounted. Here is an example. Chip 1200 has multiple circuits (systems) mounted on it. Uni, the technology of integrating multiple circuits (systems) onto a single chip is called system-on-chip ( It is sometimes referred to as a System on Chip (SoC).

[0377] As shown in Figure 20A, the chip 1200 is a CPU (Central Processor). ing Unit) 1211, GPU (Graphics Processing Un) it)1212, one or more analog arithmetic units 1213, one or more memory controllers Roller 1214, one or more interfaces 1215, one or more networks It has circuits 1216, etc.

[0378] The chip 1200 is provided with bumps (not shown), and as shown in Figure 20B, The first side of the Printed Circuit Board (PCB) 1201 It connects to this. In addition, multiple bumps 1202 are provided on the back surface of the first face of PCB1201. It is configured to connect to the motherboard 1203.

[0379] Motherboard 1203 includes memory devices such as DRAM 1221 and flash memory 1222. A place may be provided. For example, the DOSR shown in the previous embodiment may be placed in the DRAM1221. AM can be used. Also, for example, in the flash memory 1222, the above embodiment The NOSRAM shown can be used.

[0380] CPU1211 preferably has multiple CPU cores. Also, GPU1212 It is preferable that it has multiple GPU cores. Also, CPU1211 and GPU1 Each of 212 may have memory to temporarily store data. Or, CP The memory common to both U1211 and GPU1212 is provided on chip 1200. Alternatively, the aforementioned NOSRAM or DOSRAM can be used for this memory. Furthermore, the GPU1212 is suitable for parallel computation of large amounts of data, and is ideal for image processing and multiply-accumulate operations. It can be used. The GPU1212 can be used with an image processing circuit using the oxide semiconductor of the present invention. By providing a multiply-accumulate circuit, image processing and multiply-accumulate operations can be performed with low power consumption. This will become possible.

[0381] Furthermore, because the CPU1211 and GPU1212 are located on the same chip, The wiring between CPU1211 and GPU1212 can be shortened, and CPU1211 or Data transfer to GPU1212, and notes held by CPU1211 and GPU1212. Data transfer between the two systems, and after calculations on GPU1212, data transfer from GPU1212 to CPU12 The transfer of calculation results to 11 can be done at high speed.

[0382] The analog processing unit 1213 includes an A / D (analog / digital) conversion circuit and a D / A (digital / digital) conversion circuit. It has one or both of the digital / analog conversion circuits. Also, analog arithmetic unit 1213 The above-mentioned sum-of-accumulate circuit may be provided.

[0383] The memory controller 1214 is a circuit that functions as a controller for the DRAM 1221. It also has a circuit that functions as an interface for the flash memory 1222.

[0384] Interface 1215 is for display devices, speakers, microphones, cameras, and controllers. It has an interface circuit for connecting to external devices such as a torpedo. A controller is a motor This includes mice, keyboards, game controllers, etc. USB (Universal Serial Bus), HDMI (registered trademark) (H (using igh-Definition Multimedia Interface, etc.) It is possible to be there.

[0385] The network circuit 1216 is a LAN (Local Area Network), etc. It has a network circuit. It may also have a circuit for network security. stomach.

[0386] The above circuit (system) can be formed on chip 1200 using the same manufacturing process. It is possible. Therefore, even if the number of circuits required for chip 1200 increases, the manufacturing process does not need to be increased. This eliminates the need for additional processing, allowing for the low-cost manufacturing of the Chip 1200.

[0387] PCB1201 equipped with chip 1200 having GPU1212, DRAM122 1, and the motherboard 1203 equipped with flash memory 1222, GPU module It can be called Lure 1204.

[0388] The GPU module 1204 has a chip 1200 that uses SoC technology, Its size can be reduced. Also, because it excels at image processing, smart Phones, tablet devices, laptop PCs, portable (take-out) game consoles, etc. It is suitable for use in portable electronic devices. Also, a multiply-accumulate circuit using the GPU1212. This leads to the development of deep neural networks (DNNs) and convolutional neural networks. (CNN), Recurrent Neural Network (RNN), Autoencoder, Deep Boltzmann It can perform calculations such as those for machine learning (DBM) and deep belief networks (DBN). Therefore, the chip 1200 is the AI ​​chip, or the GPU module 1204 is the AI ​​system module. It can be used as a joule.

[0389] The configurations and methods shown in this embodiment are similar to those shown in other embodiments and other examples. It can be used in appropriate combination with structures, methods, etc.

[0390] (Embodiment 5) In this embodiment, regarding the application example of a memory device using the semiconductor device shown in the previous embodiment, Let me explain. The semiconductor device shown in the above embodiment is, for example, used in various electronic devices (for example, information Terminals, computers, smartphones, e-readers, digital cameras (including video cameras) This can be applied to storage devices (including recording and playback devices, navigation systems, etc.). Secondly, computers include tablet computers, notebook computers, and This includes not only desktop computers but also large computers such as server systems. Alternatively, the semiconductor device shown in the previous embodiment may be a memory card (for example, S Various types of removable media such as D cards, USB memory sticks, and SSDs (Solid State Drives) This applies to bubble storage devices. Figure 21 schematically shows several configuration examples of removable storage devices. As shown above, for example, the semiconductor device shown in the above embodiment is a packaged memory chip It is processed into plastic and used in various storage devices and removable memory.

[0391] Figure 21A is a schematic diagram of a USB memory device. The USB memory device 1100 consists of a casing 1101 and a key It has a cap 1102, a USB connector 1103 and a circuit board 1104. The circuit board 1104 is , housed in the casing 1101. For example, the circuit board 1104 has a memory chip 1105, Controller chip 1106 is installed. Memory chip 110 on board 1104 The semiconductor device shown in the above embodiment can be incorporated into 5, etc.

[0392] Figure 21B is a schematic diagram of the external appearance of an SD card, and Figure 21C is a schematic diagram of the internal structure of an SD card. This is a diagram of the equation. The SD card 1110 consists of a housing 1111, a connector 1112, and a circuit board 111. It has 3. The circuit board 1113 is housed in the housing 1111. For example, the circuit board 1113 has A memory chip 1114 and a controller chip 1115 are mounted on the circuit board 11. By also providing a memory chip 1114 on the back side of 13, the capacity of the SD card 1110 can be increased. It is possible to do so. Furthermore, a wireless chip with wireless communication functionality may be provided on the circuit board 1113. Yes. This allows the memory chip to be controlled wirelessly between the host device and the SD card 1110. Data can be read and written to p1114. Memory chip 1 on board 1113 The semiconductor device shown in the above embodiment can be incorporated into 114, etc.

[0393] Figure 21D is a schematic diagram of the external appearance of the SSD, and Figure 21E is a schematic diagram of the internal structure of the SSD. The SSD1150 has a housing 1151, a connector 1152, and a circuit board 1153. The circuit board 1153 is housed in the casing 1151. For example, the circuit board 1153 has memory chips. The chip 1154, memory chip 1155, and controller chip 1156 are installed. The memory chip 1155 is the work memory of the controller chip 1156, for example D An OSRAM chip can be used. A memory chip 1154 is also provided on the back side of the circuit board 1153. By doing so, the capacity of the SSD1150 can be increased. (Memory chip on board 1153) The semiconductor device shown in the above embodiment can be incorporated into 1154, etc.

[0394] The configurations, methods, etc. shown in this embodiment may differ from the configurations, structures, methods, etc. shown in other embodiments. They can be used in combination as appropriate.

[0395] (Embodiment 6) In this embodiment, a specific example of an electronic device to which a semiconductor device according to one aspect of the present invention can be applied is described. This will be explained using Figure 22.

[0396] More specifically, a semiconductor device according to one aspect of the present invention is a processor such as a CPU or GPU It can be used in a CPU or chip. Figure 22 shows a CPU or GP according to one aspect of the present invention. This section provides specific examples of electronic devices equipped with processors or chips such as U.

[0397] <Electronic Equipment and Systems> A GPU or chip according to one aspect of the present invention can be mounted in various electronic devices. Examples of electronic devices include, for instance, television equipment, desktop or notebook computers. Personal computers, computer monitors, digital signage (Digi Digital signage (electronic billboards), large game machines such as pachinko machines, and other relatively large devices. In addition to electronic devices with screens, digital cameras, digital video cameras, and digital photo Examples include frames, mobile phones, portable game consoles, personal digital assistants, and audio playback devices. Furthermore, by providing an integrated circuit or chip according to one aspect of the present invention in an electronic device, Artificial intelligence can be installed in the sub-devices.

[0398] An electronic device according to one aspect of the present invention may have an antenna. The antenna receives a signal. This allows the display unit to show images, information, etc. Also, the electronic device acts as an antenna. Furthermore, if a secondary battery is present, the antenna may be used for contactless power transmission.

[0399] An electronic device according to one aspect of the present invention includes a sensor (force, displacement, position, velocity, acceleration, angular velocity, rotation). Number, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, electric current, voltage, power (including functions for measuring radiation, flow rate, humidity, gradient, vibration, odor, or infrared radiation) It is acceptable to have it.

[0400] An electronic device according to one aspect of the present invention can have various functions. For example, various information Functions to display (still images, videos, text images, etc.) on the display unit, touch panel function, calendar Functions to display the date or time, and to run various software (programs). Functions include: wireless communication, and reading programs or data recorded on a recording medium. It can have functions, etc. Figure 22 shows an example of an electronic device.

[0401] [mobile phone] Figure 22A illustrates a mobile phone (smartphone), which is a type of information terminal. The information terminal 5500 has a housing 5510 and a display unit 5511, and an input interface - As a face, a touch panel is provided on the display unit 5511, and buttons are located on the housing 5510. It is provided.

[0402] The information terminal 5500 utilizes artificial intelligence by applying a chip according to one embodiment of the present invention. The application can be run. As an application utilizing artificial intelligence. For example, an application that recognizes a conversation and displays the content of that conversation on the display unit 5511. The display unit 5511 recognizes characters, shapes, etc., entered by the user on the touch panel. The application to be displayed on the display unit 5511, and the biometric authentication such as fingerprints and voiceprints are performed. Applications are one example.

[0403] [Information Terminal 1] Figure 22B illustrates a desktop information terminal 5300. The information terminal 5300 consists of the main unit 5301 of the information terminal, the display 5302, and the keyboard 5 It has 303 and

[0404] The desktop information terminal 5300, like the information terminal 5500 described above, is based on the first part of the present invention. By applying a chip of this type, it is possible to run applications that utilize artificial intelligence. Yes, it is possible. Examples of applications that utilize artificial intelligence include design support software. Examples include document editing software and automated menu generation software. By using the 5300 top-type information terminal, it is possible to develop new artificial intelligence.

[0405] In the above, smartphones and desktop information terminals were used as examples of electronic devices. As shown in Figures 22A and 22B, respectively, for smartphones and desktops One aspect of the present invention can also be applied to information terminals other than information terminals. Smartphones, Other information terminals besides desktop information terminals include, for example, PDAs (Personal Computers). (Digital Assistant), notebook computer, workstation, etc. Some examples include:

[0406] [electric appliances] Figure 22C shows an example of an electrical appliance, the electric refrigerator-freezer 5800. The storage unit 5800 includes a casing 5801, a door for the refrigerator compartment 5802, a door for the freezer compartment 5803, and the like.

[0407] By applying a chip according to one aspect of the present invention to an electric refrigerator 5800, artificial intelligence An electric refrigerator-freezer 5800 with the following features can be realized. By utilizing artificial intelligence... The electric refrigerator-freezer 5800 is used to store food items, and the food It has a function that automatically generates menus based on the expiration dates of ingredients, and the menus are stored in the 5800 electric refrigerator / freezer. It can have features such as automatically adjusting the temperature to suit the ingredients being used.

[0408] In this example, we have described electric refrigerators and freezers as electrical appliances, but other electrical appliances and For example, vacuum cleaners, microwave ovens, electric ovens, rice cookers, water heaters, induction cooktops , water dispensers, heating and cooling appliances including air conditioners, washing machines, dryers, etc. Examples include audiovisual equipment.

[0409] [Game console] Figure 22D shows a portable game console, model 5200, which is an example of a game console. The 5200 includes a housing 5201, a display unit 5202, buttons 5203, etc.

[0410] By applying a GPU or chip according to one aspect of the present invention to a portable game console 5200, This makes it possible to create a low-power portable game console, the 5200. Furthermore, due to its low power consumption, Because it can reduce heat generation from the circuit, the heat generated by the circuit itself, the surrounding circuits, and This can minimize the impact on the module.

[0411] Furthermore, by applying a GPU or chip according to one aspect of the present invention to the portable game console 5200... This makes it possible to realize the 5200, a portable game console equipped with artificial intelligence.

[0412] Originally, the progression of the game, the behavior of creatures appearing in the game, and the phenomena that occur in the game, etc. The expression is determined by the program of the game, but the handheld game console 520 By applying artificial intelligence to 0, it becomes possible to create expressions that are not limited to game programs. For example, the questions the player asks, the game's progress, the time, and the characters that appear in the game. This allows for expressions that describe a change in a person's words and actions.

[0413] Furthermore, when playing games that require multiple players on the 5200 handheld game console, artificial intelligence is used. This allows for the creation of anthropomorphic game players, thus enabling the opponent to be represented by artificial intelligence. By making it a night game, it's possible to play the game even by yourself.

[0414] Figure 22D shows a portable game console as an example of a game console, but this is one aspect of the present invention. Game consoles to which the GPU or chip is applied are not limited thereto. GPU of one aspect of the present invention Alternatively, game machines to which the chip can be applied include, for example, home console game machines and entertainment facilities. Arcade game machines installed in facilities (game centers, amusement parks, etc.), and sports facilities. Examples include pitching machines for batting practice.

[0415] [Mobile] A GPU or chip according to one aspect of the present invention is used in a mobile vehicle and the area around the driver's seat of the vehicle. It can be applied to this.

[0416] Figure 22E1 shows an example of a mobile vehicle, automobile 5700, and Figure 22E2 shows the interior of the automobile. This figure shows the area around the windshield. In Figure 22E2, it is mounted on the dashboard. In addition to the display panels 5701, 5702, and 5703 that were cut off, the pillar The installed display panel 5704 is illustrated.

[0417] Display panels 5701 to 5703 display the speedometer, tachometer, and By displaying information such as distance traveled, fuel gauge, gear status, and air conditioning settings, it provides a variety of information. This is possible. Furthermore, the display items and layout shown on the display panel can be customized to the user's preferences. It can be modified as needed to enhance the design. (Display panel) Panels 5701 through 5703 can also be used as lighting devices.

[0418] The display panel 5704 shows the information from an imaging device (not shown) installed in the automobile 5700. By projecting images, it is possible to compensate for the blind spots (visibility obstructed by pillars). In other words, by displaying images from an imaging device installed on the outside of the automobile 5700 This can compensate for blind spots and enhance safety. It also displays images that fill in the gaps in what is not visible. This allows for a more natural and seamless safety check. (Display panel 570) Item 4 can also be used as a lighting device.

[0419] A GPU or chip according to one aspect of the present invention can be applied as a component of artificial intelligence, for example If so, the chip can be used in the autonomous driving system of the automobile 5700. The chip can be used in systems for road guidance, hazard prediction, and other purposes. (Display panel 57) Panels 01 through 5704 are configured to display information such as road guidance and hazard predictions. That's good too.

[0420] In the above, an automobile was described as an example of a moving object, but the moving object is an automobile. It is not limited to these. For example, examples of moving objects include trains, monorails, ships, and aircraft (helicopters). Other examples include unmanned aerial vehicles (drones), airplanes, and rockets, and these can be moved Applying a chip according to one aspect of the present invention to a moving object to provide it with a system utilizing artificial intelligence. It is possible.

[0421] [Broadcasting System] A GPU or chip according to one aspect of the present invention can be applied to a broadcasting system.

[0422] Figure 22F schematically illustrates data transmission in a broadcasting system. Specifically, Figure 22F is where radio waves (broadcast signals) transmitted from broadcasting station 5680 reach each household's television receiver. This shows the path to the signal reaching the TV 5600. The TV 5600 is equipped with a receiving device. (Not shown in the diagram) The broadcast signal received by antenna 5650 is transmitted via the receiving device, It is transmitted to TV5600.

[0423] In Figure 22F, antenna 5650 is UHF (Ultra High Frequency) The diagram shows an antenna, but the antenna 5650 is a BS / 110°CS antenna. It can also be used for antennas such as CS antennas.

[0424] Radio waves 5675A and 5675B are broadcast signals for terrestrial broadcasting, and radio tower 5670 is The received radio wave 5675A is amplified and used to transmit radio wave 5675B. In each household, the antenna By receiving radio wave 5675B with the NA5650, you can watch terrestrial TV broadcasts with the TV5600. It is possible. Furthermore, the broadcasting system is not limited to terrestrial broadcasting as shown in Figure 22F, but also includes artificial satellite broadcasting. This could also include satellite broadcasting using stars, or data broadcasting via fiber optic lines.

[0425] The broadcasting system described above applies a chip according to one aspect of the present invention and utilizes artificial intelligence for broadcasting. It can also be used as a transmission system. Broadcast data is transmitted from broadcast station 5680 to TVs 5600 in each home. At that time, the encoder compresses the broadcast data, and the antenna 5650 receives the broadcast When data is received, the decoder of the receiving device included in the TV5600 processes the broadcast data Data recovery is performed. By using artificial intelligence, for example, the compression method of the encoder is restored. In motion compensation prediction, which is one aspect of the law, the recognition of display patterns contained in the displayed image. It can do this. It can also perform in-frame predictions using artificial intelligence. Also, for example... For example, receiving low-resolution broadcast data and using the high-resolution TV5600 to view the same broadcast data When displaying the data, the decoder performs upconversion and other processes during the restoration of the broadcast data. It can perform image interpolation.

[0426] The broadcasting system using artificial intelligence described above is designed to handle the increasing volume of broadcast data in ultra-high-definition television. It is suitable for revision (UHDTV: 4K, 8K) broadcasting.

[0427] Furthermore, as an application of artificial intelligence on the TV5600 side, for example, the TV5600 can be equipped with artificial intelligence A recording device having the capability may be provided. By having such a configuration, the recording device By having artificial intelligence learn the user's preferences, the system automatically records programs that match the user's taste. It can be drawn.

[0428] The electronic device described in this embodiment, its functions, examples of artificial intelligence applications, and their effects. These can be combined as appropriate with descriptions of other electronic devices.

[0429] The configurations, methods, etc. shown in this embodiment may differ from the configurations, structures, methods, etc. shown in other embodiments. They can be used in combination as appropriate. [Explanation of Symbols]

[0430] 100: Capacitive element, 110: Conductor, 112: Conductor, 120: Conductor, 130: Insulator 150: insulator, 200: transistor, 205: conductor, 205a: conductor, 205 b: Conductor, 210: Insulator, 212: Insulator, 214: Insulator, 216: Insulator, 21 7: Insulator, 218: Conductor, 222: Insulator, 224: Insulator, 224A: Insulator, 2 30: Oxide, 230a: Oxide, 230A: Oxide film, 230b: Oxide, 230B: Acid oxide film, 230c: oxide, 230C: oxide film, 240: conductor, 240a: conductor, 24 0b: Conductor, 241: Insulator, 241a: Insulator, 241b: Insulator, 242: Conductor , 242a: conductor, 242A: conductive film, 242b: conductor, 242B: conductor layer, 24 3: Oxide, 243a: Oxide, 243A: Oxide film, 243b: Oxide, 243B: Oxidation Material layer, 246: conductor, 246a: conductor, 246b: conductor, 250: insulator, 250 A: insulating film, 260: conductor, 260a: conductor, 260Aa: conductive film, 260Ab: conductive Electromagnetic film, 260b: Conductor, 272: Insulator, 272A: Insulating film, 273: Insulator, 273 A: insulating film, 274: insulator, 280: insulator, 281: insulator, 282: insulator, 28 3: Insulator, 290: Microwave, 291: Microwave, 292: Microwave, 300: Transistor, 311: substrate, 313: semiconductor region, 314a: low resistance region, 314b: Low resistance region, 315: insulator, 316: conductor, 320: insulator, 322: insulator, 32 4: Insulator, 326: Insulator, 328: Conductor, 330: Conductor, 350: Insulator, 35 2: Insulator, 354: Insulator, 356: Conductor, 400: Transistor, 405: Conductor , 430c: oxide, 431a: oxide, 431b: oxide, 432a: oxide, 432 b: oxide, 440: conductor, 440a: conductor, 440b: conductor, 441: insulator 441a: insulator, 441b: insulator, 442: conductor, 442a: conductor, 442b: Conductor, 443: Oxide, 443a: Oxide, 443b: Oxide, 450: Insulator, 46 0: Conductor, 460a: Conductor, 460b: Conductor, 1001: Wiring, 1002: Wiring, 1003: Wiring, 1004: Wiring, 1005: Wiring, 1006: Wiring, 1007: Wiring, 1008: Wiring, 1009: Wiring, 1010: Wiring

Claims

[Claim 1] A method for manufacturing a semiconductor device comprising a first conductor, a first insulator and a second insulator, a first oxide and a second oxide, The first oxide is formed on the substrate. The first insulator is formed on the first oxide, An opening is formed in the first insulator that reaches the first oxide, In the opening, a first oxide film is formed so as to be in contact with the first oxide and the first insulator. A first insulating film is formed on the first oxide film. Microwave treatment is performed on the first insulating film, The first insulating film and the first oxide, or either one or both, are subjected to heat treatment. A first conductive film is formed on the first insulating film. A portion of the first oxide film, a portion of the first insulating film, and a portion of the first conductive film are removed until the upper surface of the first insulator is exposed, thereby forming the second oxide, the second insulator, and the first conductor. The microwave processing described above is carried out under reduced pressure and using a gas containing oxygen. The aforementioned heat treatment is carried out under reduced pressure. Method for manufacturing semiconductor devices.

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