Air exhaust ring assembly and process chamber

Abstract

The air exhaust ring assembly comprises a first air exhaust ring surrounding a heating disc, a plurality of first air exhaust holes facing the first direction are formed in the first air exhaust ring, each first air exhaust hole comprises a first thick section and a first thin section and is connected with a vacuum mechanism through a first air exhaust path, a first plug is arranged in the first thick section, and a second plug is arranged in the first thin section; and the first plug is close to or far away from the first thin section so as to adjust the flow resistance of the first air exhaust hole.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing technology, and more particularly to a vacuum ring assembly and a process chamber. Background Technology

[0002] In semiconductor thin film deposition processes, a cyclic process of vacuuming and film deposition is typically performed sequentially under high vacuum conditions. The core purpose is to remove residual waste gas and plasma from the previous deposition reaction to avoid interfering with the quality of subsequent film layers. Currently, the industry commonly uses vacuum rings with fixed hole positions. Their structure is relatively simple and can only achieve basic vacuuming functions under specific process parameters such as pressure and temperature, providing the necessary vacuum conditions for the initial film deposition.

[0003] However, in actual production, environmental parameters such as pressure and temperature in thin film deposition processes need to be dynamically adjusted according to the requirements of different processes. Because the existing suction ring's aperture positions cannot flexibly adapt to parameter changes, when the process environment changes, the only way to meet the suction uniformity requirements is to replace the suction ring with a suitable one. This operation not only increases process downtime but also reduces the continuity of thin film deposition, significantly impacting overall production efficiency. Furthermore, the limitations of fixed aperture positions can easily lead to uneven film deposition, further affecting product quality.

[0004] In order to overcome the above-mentioned defects in the existing technology, there is an urgent need in the field for a gas extraction ring component technology to flexibly adapt to the process parameters of thin film deposition, so as to improve the adjustment accuracy of the process gas uniformity in the process chamber, thereby improving the uniformity of thin film deposition and further improving the accuracy and efficiency of the thin film deposition process. Summary of the Invention

[0005] The following provides a brief overview of one or more aspects to offer a basic understanding of them. This overview is not an exhaustive summary of all conceived aspects, nor is it intended to identify key or decisive elements of all aspects, nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed descriptions that follow.

[0006] To overcome the aforementioned deficiencies in the prior art, the present invention provides a vacuum ring assembly and a process chamber for flexibly adapting to the process parameters of thin film deposition, thereby improving the adjustment accuracy of the process gas uniformity in the process chamber, thus improving the uniformity of thin film deposition, and further improving the accuracy and efficiency of the thin film deposition process.

[0007] Specifically, the vacuum ring assembly provided according to the first aspect of the present invention includes: a first vacuum ring surrounding a heating plate, the first vacuum ring having a plurality of first vacuum holes facing a first direction, each first vacuum hole including a first thick section and a first thin section, and connected to a vacuum mechanism via a first vacuum path, wherein the first thick section has a first plug, the first plug being close to or far from the first thin section to adjust the flow resistance of the first vacuum hole.

[0008] Furthermore, in some embodiments of the present invention, the first thick section of the first air extraction hole is a first waist-shaped hole, wherein the first waist-shaped hole is provided with at least one first threaded structure, the outer diameter of the first plug is larger than the inner diameter of the first thin section, and a second threaded structure that matches the first threaded structure is provided.

[0009] Furthermore, in some embodiments of the present invention, each of the first plugs is provided with a second evacuation hole, including a second thick section and a second thin section, and is connected to the vacuum mechanism via the first evacuation path, wherein the second thick section is provided with a second plug, the second plug being close to or far from the second thin section to adjust the flow resistance of the second evacuation hole.

[0010] Furthermore, in some embodiments of the present invention, the vacuum ring assembly further includes: a second vacuum ring surrounding the heating plate, the second vacuum ring having a plurality of third vacuum holes facing a second direction and connected to the vacuum mechanism via a second vacuum path; and an adjustment part including a plurality of third plugs aligned with each of the third vacuum holes.

[0011] Furthermore, in some embodiments of the present invention, the adjusting part further includes: a vacuum ring surrounding the plurality of third plugs and forming a cavity with the second suction ring; and a suction pump connected to the cavity for providing negative pressure to the cavity, or a first inflation pump connected to the cavity for providing positive pressure to the cavity.

[0012] Furthermore, in some embodiments of the present invention, each of the third plugs includes a mandrel, an elastic element, and an adjusting head, wherein a first end of the mandrel is fixedly connected to the vacuum ring via the elastic element, and a second end of the mandrel is fixedly connected to the adjusting head.

[0013] Furthermore, in some embodiments of the present invention, each of the third plugs further includes: a first bellows surrounding the third plug, wherein a first end of the first bellows is fixedly connected to a first sidewall of the vacuum ring, and a second end is fixedly connected to the mandrel; and a second bellows surrounding the mandrel, wherein a first end is fixedly connected to a second sidewall of the vacuum ring, and a second end is fixedly connected to the mandrel.

[0014] Furthermore, in some embodiments of the present invention, the adjusting part further includes an adjusting shaft, the first end of which is movably connected to the vacuum ring, and the second end of which is fixedly connected to the elastic element. The adjusting shaft moves closer to or further away from the elastic element to adjust the preload of the elastic element.

[0015] Furthermore, in some embodiments of the present invention, the adjusting part further includes a fourth plug, an air passage disposed inside the adjusting head, and each of the third suction holes being connected to the vacuum mechanism via a third suction path, wherein the fourth plug is rotatably connected to the adjusting head, and the fourth plug is close to or far from the end of the adjusting head to adjust the flow resistance of the air passage.

[0016] Furthermore, in some embodiments of the present invention, the second suction ring is connected to a second air pump, which provides purge gas to the second suction path to reduce particle accumulation near each of the third suction holes.

[0017] Furthermore, in some embodiments of the present invention, the vacuum ring assembly further includes: a fixing ring, which is fixedly connected to the process chamber for mounting the first vacuum ring and / or the second vacuum ring, and / or an outer retaining ring, which is fixedly connected to the fixing ring and surrounds the first vacuum ring and / or the second vacuum ring.

[0018] Furthermore, the process chamber provided according to the second aspect of the present invention includes: a spray head for introducing reactive gas into the process chamber; a heating plate disposed below the spray head for performing a thin film deposition process on a wafer thereon; a vacuum ring assembly as described in any one of the first aspects of the present invention, surrounding the heating plate for adjusting the distribution of reactive gas density in the process chamber; and a vacuum mechanism connected to a vacuum port disposed on the side wall of the process chamber for providing negative pressure to the process chamber via the vacuum port and the vacuum ring assembly. Attached Figure Description

[0019] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0020] Figure 1 A schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention is shown.

[0021] Figure 2 A schematic diagram of the structure of a vacuum ring assembly provided according to some embodiments of the present invention is shown.

[0022] Figure 3A side view of a first suction ring provided according to some embodiments of the present invention is shown.

[0023] Figure 4 A schematic diagram of the structure of a first air extraction port provided according to some embodiments of the present invention is shown.

[0024] Figure 5 A schematic diagram of the structure of the first thick segment provided according to some embodiments of the present invention is shown.

[0025] Figure 6 A schematic diagram of the structure of a second air extraction port provided according to some embodiments of the present invention is shown.

[0026] Figure 7 A schematic diagram of the structure of the second suction ring and the adjustment part provided according to some embodiments of the present invention is shown.

[0027] Figure 8 A schematic diagram of the structure of an adjustment section provided according to some embodiments of the present invention is shown.

[0028] Figure label:

[0029] 10 spray heads

[0030] 20 heating plates

[0031] 30. Suction ring assembly

[0032] 31 First suction ring

[0033] 311 First air extraction port

[0034] 312 First Thick Section

[0035] 313 First Detail

[0036] 314 First Block

[0037] 3141 Second thick section

[0038] 3142 Second section

[0039] 3143 Second plug

[0040] 3144 First Thread Structure

[0041] 32 Second suction ring

[0042] 321 Third air extraction port

[0043] 33 Adjustment section

[0044] 3311 mandrel

[0045] 3312 Elastic component

[0046] 3313 Adjusting head

[0047] 3314 First Bellows

[0048] 3315 Second Corrugated Pipe

[0049] 332 Fourth plug

[0050] 34 Vacuum Ring

[0051] 35 Second exhaust pipe

[0052] 36. Fixing ring

[0053] 37 Outer retaining ring

[0054] 40 Exhaust port Detailed Implementation

[0055] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. Although the description of the present invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may be derived based on the claims of the present invention. To provide a thorough understanding of the invention, many specific details will be included in the following description. The invention may also be implemented without using these details. Furthermore, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0056] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0057] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0058] It is understood that although terms such as "first," "second," and "third" may be used herein to describe various components, regions, layers, and / or parts, these components, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers, and / or parts. Therefore, the first components, regions, layers, and / or parts discussed below may be referred to as second components, regions, layers, and / or parts without departing from some embodiments of the present invention.

[0059] As mentioned above, in semiconductor thin film deposition processes, a cycle of vacuuming and film deposition is typically performed sequentially under high vacuum conditions. The core purpose is to remove residual waste gas and plasma from the previous deposition reaction to avoid interfering with the quality of subsequent film layers. Currently, the industry commonly uses vacuum rings with fixed hole positions. Their structure is relatively simple and can only achieve basic vacuuming functions under specific process parameters such as pressure and temperature, providing the necessary vacuum conditions for the initial film deposition.

[0060] However, in actual production, environmental parameters such as pressure and temperature in thin film deposition processes need to be dynamically adjusted according to the requirements of different processes. Because the existing suction ring's aperture positions cannot flexibly adapt to parameter changes, when the process environment changes, the only way to meet the suction uniformity requirements is to replace the suction ring with a suitable one. This operation not only increases process downtime but also reduces the continuity of thin film deposition, significantly impacting overall production efficiency. Furthermore, the limitations of fixed aperture positions can easily lead to uneven film deposition, further affecting product quality.

[0061] To overcome the aforementioned deficiencies in the prior art, the present invention provides a vacuum ring assembly and a process chamber for flexibly adapting to the process parameters of thin film deposition, thereby improving the adjustment accuracy of the process gas uniformity in the process chamber, thus improving the uniformity of thin film deposition, and further improving the accuracy and efficiency of the thin film deposition process.

[0062] In some non-limiting embodiments, the above-described suction ring assembly provided in the first aspect of the present invention can be configured in the process chamber provided in the second aspect of the present invention.

[0063] Please refer to the details. Figure 1 , Figure 1 A schematic diagram of the structure of a process chamber provided according to some embodiments of the present invention is shown.

[0064] like Figure 1As shown, the process chamber includes a spray head 10, a heating plate 20, a vacuum ring assembly 30, and a vacuum mechanism. The spray head 10 is used to introduce reactive gases into the process chamber. The heating plate 20 is located below the spray head 10 and is used for thin film deposition processes on the wafers thereon. The vacuum ring assembly 30 surrounds the heating plate 20 and is used to adjust the density distribution of reactive gases in the process chamber. The vacuum mechanism is connected to a vacuum port 40 located on the side wall of the process chamber and is used to provide negative pressure to the process chamber through the vacuum port 40 and the vacuum ring assembly 30.

[0065] Please refer to Figures 2-4 , Figure 2 A schematic diagram of the structure of a vacuum ring assembly provided according to some embodiments of the present invention is shown. Figure 3 A side view of a first suction ring provided according to some embodiments of the present invention is shown. Figure 4 A schematic diagram of the structure of a first air extraction port provided according to some embodiments of the present invention is shown.

[0066] like Figures 2-4 As shown, the vacuum ring assembly 30 includes a first vacuum ring 31 that surrounds the heating plate 20. The first vacuum ring 31 has a plurality of first vacuum holes 311 facing a first direction. Here, the first direction can be vertical. Each first vacuum hole 311 includes a first thick section 312 and a first thin section 313, and is connected to a vacuum mechanism via a first vacuum path. A first plug 314 is provided in the first thick section 312, and the first plug 314 is close to or far from the first thin section 313 to adjust the flow resistance of the first vacuum hole 311.

[0067] Here, the suction ring assembly 30 provides a plurality of first suction holes 311 on the first suction ring 31, and by controlling the gas flow resistance of the plurality of first suction holes 311 respectively, it flexibly adapts to the process parameters of thin film deposition, thereby improving the adjustment accuracy of the process gas uniformity in the process chamber, thereby improving the uniformity of thin film deposition, and further improving the accuracy and efficiency of the thin film deposition process.

[0068] Please refer to Figure 5 , Figure 5 A schematic diagram of the structure of the first thick segment provided according to some embodiments of the present invention is shown.

[0069] like Figure 5 As shown, the first coarse section 312 of the first air extraction hole 311 is a first waist-shaped hole. The first waist-shaped hole is provided with at least one first thread structure 3144. The outer diameter of the first plug 314 is larger than the inner diameter of the first thin section 313, and a second thread structure that matches the first thread structure 3144 is provided.

[0070] Here, the first thread structure 3144 is an internal thread in the oblong hole, and it is a half thread located in the middle of the oblong hole. The second thread structure is located on the outer surface of the first plug 314 to match the half thread in the middle of the oblong hole, forming two branch gas flow channels in the first suction hole 311 that flow out through the first narrow section 313. When the first plug 314 is rotated, it moves in the vertical direction in the first suction hole 311 to change the cross-sectional size of the two branch gas flow channels, thereby adjusting the flow resistance of the first suction hole 311.

[0071] Please refer to Figure 6 , Figure 6 A schematic diagram of the structure of a second air extraction port provided according to some embodiments of the present invention is shown.

[0072] like Figure 6 As shown, each first plug 314 is provided with a second air extraction hole, including a second thick section 3141 and a second thin section 3142, and is connected to a vacuum mechanism via a first air extraction path. The second thick section 3141 is provided with a second plug 3143, which is close to or far from the second thin section 3142 to adjust the flow resistance of the second air extraction hole.

[0073] Here, when the adjustment of the flow resistance of the first vent hole 311 by the first plug 314 cannot meet the flow resistance adjustment requirements, the second plug 3143 is rotated, thereby further adjusting the gas flow resistance of the second vent hole, and further adjusting the uniformity of the deposited gas in the process chamber with high precision.

[0074] Please refer to the reference. Figure 2 and Figures 7-8 , Figure 7 A schematic diagram of the structure of the second suction ring and the adjustment part provided according to some embodiments of the present invention is shown. Figure 8 A schematic diagram of the structure of an adjustment section provided according to some embodiments of the present invention is shown.

[0075] like Figure 2 and Figures 7-8 As shown, the vacuum ring assembly 30 also includes a second vacuum ring 32 and an adjustment section 33. The second vacuum ring 32 surrounds the heating plate 20 and has a plurality of third vacuum holes 321 facing a second direction, and is connected to the vacuum mechanism via a second vacuum path. Here, the second direction can be the radial direction of the vacuum ring assembly 30. The adjustment section 33 includes a plurality of third plugs, which are aligned one by one with each of the third vacuum holes 321.

[0076] Here, the present invention uses the cooperation of the first suction ring 31 and the second suction ring 32 to independently adjust each suction hole of the suction ring. This design can flexibly adapt to parameter changes under different process environments without replacing the suction ring, effectively solving the adaptability problem of fixed hole suction rings. It is used to flexibly adapt to the process parameters of thin film deposition, accurately adjust the pores of the suction ring, thereby improving the uniformity of thin film deposition and further improving the efficiency of the thin film deposition process.

[0077] In some embodiments, the second suction ring 32 may be fixedly connected to the first suction ring 31 to cooperate in adjusting the uniformity of the concentration of the reaction gas in the process chamber.

[0078] In some embodiments, the adjustment unit 33 further includes a vacuum ring 34 that surrounds a plurality of third plugs and forms a cavity with the second suction ring 32.

[0079] Furthermore, each third plug includes a spindle 3311, an elastic element 3312, and an adjusting head 3313. The first end of the spindle 3311 is fixedly connected to the vacuum ring 34 via the elastic element 3312, while its second end is fixedly connected to the adjusting head 3313. Here, the elastic expansion and contraction portion of the third plug undergoes compression deformation as the gas pressure flowing out of the third through hole increases, or recovers its compression deformation as the gas pressure flowing out of the third through hole decreases, so as to independently adjust the gas flow rate of each third through hole.

[0080] In some embodiments, the inner wall of the third vent 321 is further provided with an adjusting sleeve to protect the inner wall of the third vent, so as to prevent particulate contamination of the process chamber caused by the collision between the third vent and the adjusting head 3313. Here, the adjusting sleeve may also have a tapered inner wall, and the opening of the third vent can be changed by replacing adjusting sleeves with different tapers.

[0081] In some embodiments, each third plug further includes a first bellows 3314 and a second bellows 3315. The first bellows 3314 surrounds the third plug. A first end of the first bellows 3314 is fixedly connected to a first sidewall of the vacuum ring 34, and a second end is fixedly connected to a mandrel 3311. The second bellows 3315 surrounds the mandrel 3311, with its first end fixedly connected to a second sidewall of the vacuum ring 34, and its second end fixedly connected to the mandrel 3311. Here, a boss structure is provided in the middle of the mandrel 3311 for connecting the first bellows 3314 and the second bellows 3315.

[0082] In some embodiments, the adjusting part 33 further includes an adjusting shaft, the first end of which is movably connected to the vacuum ring 34, and the second end of which is fixedly connected to the elastic member 3312. The adjusting shaft moves closer to or further away from the elastic member 3312 to adjust the preload of the elastic member 3312.

[0083] In some embodiments, the adjustment unit 33 further includes a vacuum pump connected to the cavity of the vacuum ring 34 for providing negative pressure to the cavity. Here, since the elastic member 3312 generates a positive pressure on the third evacuation port 321 via the adjustment head 3313, the third evacuation port 321 is normally closed. In response to the pressure value in the process chamber being greater than a preset threshold, the elastic member 3312 is compressed to open the second evacuation path of the third evacuation port 321, thereby reducing the flow resistance of the third evacuation port 321. Further, in response to the pressure value in the process chamber decreasing and exceeding the preset pressure threshold, the elastic member 3312 gradually elongates from the compressed state, thereby increasing the flow resistance of the third evacuation port 321. Here, the preset pressure threshold is the difference between the positive pressure value of the elastic member 3312 and the negative pressure value of the vacuum pump. Therefore, the vacuum ring assembly 30 can set the pressure threshold by adjusting the negative pressure value of the vacuum pump.

[0084] In some embodiments, the adjustment unit 33 further includes a first air pump. The first air pump is connected to the cavity and is used to provide positive pressure to the cavity. Here, by introducing positive pressure into the cavity, the elastic member 3312 can be adjusted to remain in an extended state to close the second air extraction path of the third air extraction port 321.

[0085] In some embodiments, the adjustment unit 33 further includes a fourth plug 332, an air passage disposed inside the adjustment head 3313, and each third suction hole 321 connected to the vacuum mechanism via a third suction path. The fourth plug 332 is rotatably connected to the adjustment head 3313, and the fourth plug 332 is close to or away from the end of the adjustment head 3313 to adjust the flow resistance of the air passage.

[0086] Here, the fourth plug 332 can be manually adjusted to its initial position before installation to set the initial flow resistance.

[0087] In some embodiments, the second suction ring 32 is connected to a second air pump, which provides purge gas to the second suction path to reduce particle buildup near each of the third suction holes 321. Here, the second suction ring 32 is connected to the second air pump via a second suction conduit 35.

[0088] In some embodiments, the suction ring assembly 30 further includes a retaining ring 36 and / or an outer retaining ring 37. The retaining ring 36 is fixedly connected to the process chamber and is used to mount the first suction ring 31 and / or the second suction ring 32. The outer retaining ring 37 is fixedly connected to the retaining ring 36 and surrounds the first suction ring 31 and / or the second suction ring 32.

[0089] In summary, the vacuum ring assembly 30 and process chamber provided by the present invention can be used to flexibly adapt to the process parameters of thin film deposition, so as to improve the adjustment accuracy of the process gas uniformity in the process chamber, thereby improving the uniformity of thin film deposition and further improving the accuracy and efficiency of the thin film deposition process.

[0090] Although the methods described above are illustrated and depicted as a series of actions for the sake of simplicity, it should be understood and appreciated that these methods are not limited by the order of the actions, as some actions may occur in a different order and / or concurrently with other actions from the illustrations and descriptions herein or not illustrated and described herein but which may be understood by those skilled in the art, according to one or more embodiments.

[0091] The prior description of this disclosure is provided to enable any person skilled in the art to make or use this disclosure. Various modifications to this disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of this disclosure. Therefore, this disclosure is not intended to be limited to the examples and designs described herein, but should be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A gas extraction ring assembly, characterized in that, Comprising: a first pumping ring surrounding the heating disc, the first pumping ring being provided with a plurality of first pumping holes facing a first direction, each of the first pumping holes comprising a first thick section and a first thin section, and being connected to a vacuum mechanism via a first pumping path, wherein a first plug is arranged in the first thick section, the first plug being close to or away from the first thin section to adjust a flow resistance of the first pumping hole.

2. The gas extraction ring assembly of claim 1, wherein, The first thick section of the first pumping hole is a first waist-shaped hole, wherein at least one first threaded structure is arranged in the first waist-shaped hole, an outer diameter of the first plug is greater than an inner diameter of the first thin section, and a second threaded structure matched with the first threaded structure is arranged on the first plug.

3. The gas extraction ring assembly of claim 1, wherein, Each of the first plugs is provided with a second pumping hole comprising a second thick section and a second thin section, and being connected to the vacuum mechanism via the first pumping path, wherein a second plug is arranged in the second thick section, the second plug being close to or away from the second thin section to adjust a flow resistance of the second pumping hole.

4. The gas extraction ring assembly of claim 1, wherein, Further comprising: a second pumping ring surrounding the heating disc, the second pumping ring being provided with a plurality of third pumping holes facing a second direction, and being connected to the vacuum mechanism via a second pumping path; and an adjusting part comprising a plurality of third plugs aligned with the third pumping holes one by one.

5. The gas extraction ring assembly of claim 4, wherein, The adjusting part further comprises: a vacuum ring surrounding the plurality of third plugs, and forming a cavity together with the second pumping ring; and a pumping pump connected to the cavity, for providing negative pressure to the cavity, or a first charging pump connected to the cavity, for providing positive pressure to the cavity.

6. The gas extraction ring assembly of claim 5, wherein, Each of the third plugs comprises a mandrel, an elastic member and an adjusting head, wherein a first end of the mandrel is fixedly connected to the vacuum ring via the elastic member, and a second end of the mandrel is fixedly connected to the adjusting head.

7. The gas extraction ring assembly of claim 6, wherein, Each of the third plugs further comprises: a first bellows surrounding the third plug, wherein a first end of the first bellows is fixedly connected to a first side wall of the vacuum ring, and a second end of the first bellows is fixedly connected to the mandrel; and a second bellows surrounding the mandrel, a first end of the second bellows being fixedly connected to a second side wall of the vacuum ring, and a second end of the second bellows being fixedly connected to the mandrel.

8. The gas extraction ring assembly of claim 6, wherein, The adjusting part further comprises an adjusting shaft, a first end of the adjusting shaft being movably connected to the vacuum ring, and a second end of the adjusting shaft being fixedly connected to the elastic member, the adjusting shaft being close to or away from the elastic member to adjust a pre-tightening force of the elastic member.

9. The gas extraction ring assembly of claim 7, wherein, The adjusting part further comprises a fourth plug arranged in an air passage inside the adjusting head, each of the third pumping holes being connected to the vacuum mechanism via a third pumping path, wherein the fourth plug is rotatably connected to the adjusting head, the fourth plug being close to or away from an end of the adjusting head to adjust a flow resistance of the air passage.

10. The gas extraction ring assembly of claim 4, wherein, The second pumping ring is connected to a second charging pump, the second charging pump providing purge gas to the second pumping path to reduce accumulation of particles near each of the third pumping holes.

11. The gas extraction ring assembly of claim 4, wherein, Further comprising: a fixing ring fixedly connected to a process chamber, for mounting the first pumping ring and / or the second pumping ring, and / or an outer blocking ring fixedly connected to the fixing ring, and surrounding the first pumping ring and / or the second pumping ring.

12. A process chamber, comprising: Comprising: a showerhead for introducing a reactant gas into the process chamber; a heating plate disposed below the showerhead for performing a film deposition process on a wafer thereon; a gas distribution ring assembly according to any one of claims 1-10 surrounding the heating plate for adjusting a distribution of a reactant gas density in the process chamber; and a vacuum mechanism connected to a gas exhaust disposed on a sidewall of the process chamber for providing a negative pressure to the process chamber through the gas exhaust and the gas distribution ring assembly.

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