Heating plate top ring and thin film deposition equipment

Abstract

The invention provides a heating plate top ring and thin film deposition equipment. The heating plate top ring wraps the outer edge of a heating plate, and comprises an inner side, an outer side, a top ring and a top ring, the surface of the inner side is attached to the outer edge of the heating plate; and the outer side is provided with a structure matched with a ceramic ring, and the structure is matched with the contact surface between the ceramic rings.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment manufacturing, and more particularly to thin film deposition equipment. Background Technology

[0002] Semiconductor process equipment, such as thin film deposition equipment, faces several key technological challenges during thin film deposition. Existing chamber structures have significant shortcomings in terms of film uniformity, primarily manifested as uneven airflow distribution between the substrate edges and center, leading to film warping. This non-uniformity is particularly pronounced when processing large-area substrates, often causing film thickness variations exceeding the required threshold. Simultaneously, non-ideal convection patterns formed by reactive gases within the chamber further exacerbate deposition non-uniformity. Regarding plasma control, deficiencies in traditional designs allow plasma to easily leak into non-reactive areas, forming plasma fields. This not only interferes with the normal deposition process but also causes process instability and fluctuations in process parameters. Furthermore, existing gas delivery systems have significant design flaws, allowing some reactive gases to seep into the dead zone below the heating plate. Due to low extraction efficiency in this area, residual gas undergoes side reactions at high temperatures, generating particulate matter. Over time, these particles accumulate, severely impacting product yield.

[0003] Therefore, a new structure is urgently needed to improve gas distribution in order to enhance process stability and film uniformity. Summary of the Invention

[0004] To overcome the shortcomings of the prior art, the present invention provides a heating plate top ring and a thin film deposition apparatus.

[0005] The present invention provides a heating plate top ring, which wraps around the outer edge of the heating plate and includes an inner side and an outer side.

[0006] The inner surface is in contact with the outer edge of the heating plate;

[0007] The outer side has a structure that mates with a ceramic ring, and the contact surfaces between the structure and the ceramic ring mate with each other.

[0008] In one embodiment, there is a gap between the structure and the contact surface of the ceramic ring.

[0009] In one embodiment, the gap is between 0.5 and 1 mm.

[0010] In one embodiment, the contact surface between the structure and the ceramic ring is in a multi-step fit or in a 90° multi-level interlaced labyrinth structure.

[0011] In one embodiment, the contact surface between the structure and the ceramic ring is in a single trapezoidal fit.

[0012] In one embodiment, the contact surface between the structure and the ceramic ring is conical.

[0013] In one embodiment, the heating plate top ring is surrounded by the ceramic ring, and the height of the heating plate top ring is greater than the height of the ceramic ring.

[0014] In one embodiment, the bottom of the heating plate top ring is located below the bottom of the ceramic ring.

[0015] In one embodiment, the bottom of the heating plate top ring and the bottom of the ceramic ring are located on the same plane.

[0016] The present invention also provides a thin film deposition apparatus, including but not limited to a heating plate, a vacuum ring, a heating plate top ring as described above, a ceramic ring, and a spray head.

[0017] The heating plate is used to support and heat the wafer.

[0018] The spray head is located directly above the heating plate, opposite to the heating plate and spaced apart.

[0019] The suction ring is located above the heating plate.

[0020] The top ring of the heating plate wraps around the outer edge of the heating plate.

[0021] A ceramic ring is located at the bottom of the suction ring and surrounds the top ring of the heating plate, and the contact surfaces of the ceramic ring and the top ring of the heating plate cooperate with each other.

[0022] The heating plate top ring of the present invention can reduce the effect of plasma on the wafer edge, reduce the increase in edge film thickness caused by substrate oxidation, reduce the difference in film thickness between the edge and the center, and thus improve the uniformity of the film. It can also reduce the gap between the spray head and the heating plate, resulting in a smaller pumping gap and increased flow conduction, which becomes the "bottleneck" of the entire pumping system. This reduces the system pumping speed, makes the low point of the flow field tend to be in the center, and makes the airflow more stable and uniform, thereby improving the uniformity of the film.

[0023] In addition, the top ring of the heating plate avoids the need to redesign a new heating plate, reducing costs and saving time.

[0024] The contact surface between the heating plate top ring and the ceramic ring of the present invention has a unique fit design, which can reduce the downward flow of reactive gas to form a plasma field below the heating plate, thereby preventing the occurrence of process instability; in addition, it can also reduce the entry of reactive gas into the area below the heating plate, which can lead to incomplete evacuation and particle formation. Attached Figure Description

[0025] The above-described invention and the following detailed description will be better understood when read in conjunction with the accompanying drawings. It should be noted that the drawings are merely examples of the claimed invention. In the drawings, the same reference numerals represent the same or similar elements.

[0026] Figure 1 A thin film deposition apparatus according to an embodiment of the present invention is shown;

[0027] Figure 2 A partially enlarged view of the engagement between the heating plate top ring and the ceramic ring according to an embodiment of the present invention is shown;

[0028] Figure 3a A schematic diagram of the heating plate top ring according to an embodiment of the present invention is shown;

[0029] Figure 3b A schematic diagram of a ceramic ring according to an embodiment of the present invention is shown;

[0030] Figure 4 A partially enlarged view of the engagement between the heating plate top ring and the ceramic ring according to an embodiment of the present invention is shown;

[0031] Figure 5 A partially enlarged view of the engagement between the heating plate top ring and the ceramic ring according to an embodiment of the present invention is shown;

[0032] Figure 6a A simulation diagram of the flow field of a heating plate with a top ring according to an embodiment of the present invention is shown.

[0033] Figure 6b The simulation diagram of the flow field of a heating plate without a heating plate top ring in the prior art is shown. Detailed Implementation

[0034] The following detailed description of the features and advantages of the present invention provides sufficient information for any person skilled in the art to understand and implement the invention. Furthermore, based on the specification, claims, and drawings disclosed herein, those skilled in the art can easily understand the related objectives and advantages of the invention. Although the description of the invention is presented in conjunction with preferred embodiments, this does not mean that the features of the invention are limited to these embodiments. On the contrary, the purpose of describing the invention in conjunction with embodiments is to cover other options or modifications that may arise based on the claims of the invention. To provide a thorough understanding of the invention, numerous specific details will be included in the following description. The invention may also be implemented without using these details. Moreover, to avoid confusion or obscuring the focus of the invention, some specific details will be omitted in the description.

[0035] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0036] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood as the orientations shown in the relevant paragraphs and accompanying drawings. These relative terms are for illustrative purposes only and do not imply that the described apparatus must be manufactured or operated in a specific orientation, and therefore should not be construed as limiting the invention.

[0037] It is understood that while terms such as "first," "second," and "third" may be used herein to describe various components, channels, assemblies, regions, layers, and / or parts, these components, channels, assemblies, regions, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, channels, assemblies, regions, layers, and / or parts. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0038] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not specifically singular and may include plural forms. Generally speaking, the terms "comprising" and "including" only indicate the inclusion of explicitly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements.

[0039] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples with the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, numerical parameters should take into account specified significant digits and employ a general method of digit reservation. Although the numerical ranges and parameters used to confirm their breadth of scope in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

[0040] Furthermore, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this specification do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of the application can be appropriately combined.

[0041] Figure 1 A thin film deposition apparatus according to an embodiment of the present invention is shown. The thin film deposition apparatus includes, but is not limited to, a cavity 4, a spray head 1, a heating plate 6, a heating plate top ring 5, a ceramic ring 3, and a suction ring 2.

[0042] The spray head 1 and the heating plate 6 are positioned opposite each other and spaced apart, with the heating plate 6 located directly below the spray head 1.

[0043] The spray head 1 has a micropore array to uniformly deliver the reaction gas to the heating plate 6.

[0044] Heating plate 6 is used to support and heat the wafer.

[0045] The suction ring 2 is located between the spray head 1 and the heating plate 6, and is used to quickly discharge residual gas, optimize the flow field distribution in the chamber, and prevent the deposition of reaction byproducts.

[0046] A ceramic ring 3 is provided at the bottom of the suction ring 2.

[0047] In one embodiment, the ceramic ring 3 may include an inner ceramic ring and an outer ceramic ring, which are installed concentrically.

[0048] The ceramic ring 3 serves as insulation, preventing short circuits caused by current generated by plasma or radio frequency power supply between the equipment cavity and components, thus ensuring process stability.

[0049] A heating plate top ring 5 is installed on the outer edge of the heating plate 6. The contact surfaces of the ceramic ring 3 and the heating plate top ring 5 cooperate with each other, which can reduce the effect of plasma on the wafer edge, reduce the increase in edge film thickness caused by substrate oxidation, reduce the difference in film thickness between the edge and the center, and thus improve the uniformity of the film. It can also reduce the gap between the spray head and the heating plate, resulting in a smaller pumping gap and increased flow conduction, which becomes the "bottleneck" of the entire pumping system. This reduces the system pumping speed, makes the low point of the flow field tend to be in the center, and makes the airflow more stable and uniform, thereby improving the uniformity of the film.

[0050] During thin film deposition, a plasma electric field is formed between the spray head and the heating plate. The reactant gases, after mixing, enter the reaction zone through the spray head for film deposition. Gas from the bottom of the chamber enters the reaction zone through the gap between the ceramic ring and the top ring of the heating plate. The gas is then extracted by a suction ring, preventing reactant gases from entering below the heating plate. The top ring of the heating plate reduces the effect of plasma on the wafer edges, mitigating edge thickness increases caused by substrate oxidation and reducing the thickness difference between the edges and the center, thus improving film uniformity. Three structural options—multi-step structure (90° multi-level staggered labyrinth structure), stepped structure, and conical structure—between the ceramic ring and the top ring of the heating plate reduce downward flow of reactant gases, thereby reducing the occurrence of process instability caused by a plasma field below the heating plate; and reducing the amount of reactant gases entering below the heating plate, which could lead to incomplete extraction and particle formation. Furthermore, the top ring of the heating plate avoids the need for redesigning a new heating plate, reducing costs and saving time.

[0051] Figure 2 A partially enlarged view shows the engagement of the heating plate top ring and the ceramic ring according to an embodiment of the present invention. Figure 2 As shown, the top ring 5-2 of the heating plate wraps around the outer edge of the heating plate.

[0052] A ceramic ring 5-1 is set around the top ring 5-2 of the heating plate.

[0053] The contact surfaces of the heating plate top ring 5-2 and the ceramic ring 5-1 are in a multi-step pattern.

[0054] In one embodiment, the height of the heating plate top ring 5-2 is greater than the height of the ceramic ring 5-1.

[0055] In one embodiment, the bottom of the heating plate top ring 5-2 is located below the bottom of the ceramic ring 5-1.

[0056] In one embodiment, there is a gap between the contact surfaces of the heating plate top ring 5-2 and the ceramic ring 5-1.

[0057] In one embodiment, the gap is approximately 0.5 to 1 mm, and can be adjusted according to process requirements.

[0058] Figure 3a A schematic diagram of a heating plate top ring according to an embodiment of the present invention is shown. The heating plate top ring covers the outer edge of the heating plate and includes an inner side 301 and an outer side.

[0059] The inner surface 301 is attached to the outer edge of the heating plate.

[0060] The outer side has a structure 302 that mates with a ceramic ring, and the contact surface between the structure and the ceramic ring mates with each other.

[0061] Figure 3bA schematic diagram of a ceramic ring according to an embodiment of the present invention is shown.

[0062] like Figure 3a and Figure 3b As shown, the contact surface between the top ring of the heating plate and the ceramic ring has a multi-step fit.

[0063] Figure 4 A partially enlarged view of the heating plate top ring and ceramic ring mating according to an embodiment of the present invention is shown. As shown in Figure 3, the heating plate top ring 5-2 wraps around the outer edge of the heating plate.

[0064] A ceramic ring 5-1 is set around the top ring 5-2 of the heating plate.

[0065] The contact surfaces of the heating plate top ring 5-2 and the ceramic ring 5-1 are in a single trapezoidal fit.

[0066] In one embodiment, the height of the heating plate top ring 5-2 is greater than the height of the ceramic ring 5-1.

[0067] In one embodiment, the bottom of the heating plate top ring 5-2 is on the same plane as the bottom of the ceramic ring 5-1.

[0068] In one embodiment, there is a gap between the contact surfaces of the heating plate top ring 5-2 and the ceramic ring 5-1.

[0069] In one embodiment, the gap is approximately 0.5 to 1 mm.

[0070] Figure 5 A partially enlarged view of the heating plate top ring and ceramic ring mating according to an embodiment of the present invention is shown. As shown in Figure 3, the heating plate top ring 5-2 wraps around the outer edge of the heating plate.

[0071] A ceramic ring 5-1 is set around the top ring 5-2 of the heating plate.

[0072] The contact surfaces of the heating plate top ring 5-2 and the ceramic ring 5-1 are conical.

[0073] In one embodiment, the height of the heating plate top ring 5-2 is greater than the height of the ceramic ring 5-1.

[0074] In one embodiment, the bottom of the heating plate top ring 5-2 is on the same plane as the bottom of the ceramic ring 5-1.

[0075] In one embodiment, there is a gap between the contact surfaces of the heating plate top ring 5-2 and the ceramic ring 5-1.

[0076] In one embodiment, the gap is approximately 0.5 to 1 mm.

[0077] Figure 6aA simulation diagram of the flow field of a heating plate with a top ring according to an embodiment of the present invention is shown. The left side shows the pumping velocity distribution, and the right side shows the pressure distribution.

[0078] Figure 6b The diagram shows a simulation of the flow field of a heating plate without a top ring in the prior art. The left side shows the pumping velocity distribution, and the right side shows the pressure distribution.

[0079] The heating plate top ring and the mating structure between the heating plate top ring and the ceramic ring of the present invention have the following beneficial technical effects:

[0080] Firstly, it can reduce the downward flow of reactive gases and prevent the formation of a plasma field below the heating plate, which could cause process instability.

[0081] Secondly, it can reduce the amount of reactive gas entering below the heating plate, which could lead to incomplete evacuation and particle formation.

[0082] The terminology and expressions used above are for descriptive purposes only, and the invention should not be limited to these terms and expressions. The use of these terms and expressions does not mean excluding any illustrative and descriptive equivalent features (or parts thereof), and it should be recognized that various modifications that may exist should also be included within the scope of the claims. Other modifications, variations, and substitutions may also exist. Accordingly, the claims should be considered to cover all such equivalents.

[0083] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the present application requires more features than those mentioned in the claims.

[0084] Similarly, it should be noted that although the present invention has been described with reference to the specific embodiments described above, those skilled in the art should recognize that the above embodiments are only used to illustrate the present invention, and various equivalent changes or substitutions can be made without departing from the spirit of the present invention. Therefore, any changes or modifications to the above embodiments within the scope of the essential spirit of the present invention will fall within the scope of the claims of this application.

Claims

1. A heater disk top ring characterized by, The heating plate top ring wraps the outer edge of the heating plate, and the heating plate top ring comprises: an inner side, a surface of which is fitted to the outer edge of the heating plate; an outer side, which has a structure matched with a ceramic ring, and the contact surface between the structure and the ceramic ring is matched with each other.

2. The heater disk top ring of claim 1 wherein, The contact surface between the structure and the ceramic ring has a gap.

3. The heater disk top ring of claim 1 wherein, The gap is between 0.5-1mm.

4. The heater tray top ring of claim 1 wherein, The contact surface between the structure and the ceramic ring is matched in a multi-step manner.

5. The heater disk top ring of claim 1 wherein, The contact surface between the structure and the ceramic ring is matched in a single-step manner.

6. The heater disk top ring of claim 1 wherein, The contact surface between the structure and the ceramic ring is matched in a conical surface manner.

7. The heater disk top ring of claim 1 wherein, The heating plate top ring is surrounded by the ceramic ring, and the height of the heating plate top ring is greater than the height of the ceramic ring.

8. The heater tray top ring of claim 4 wherein, The bottom of the heating plate top ring is below the bottom of the ceramic ring.

9. The heater tray top ring of claim 5 wherein, The bottom of the heating plate top ring is in the same plane as the bottom of the ceramic ring.

10. A thin film deposition apparatus, characterized by, It comprises: a heating plate for supporting and heating a wafer; a shower head located directly above the heating plate and arranged opposite and spaced apart from the heating plate; an exhaust ring located above the heating plate; a heating plate top ring as claimed in any one of claims 1 to 9, wrapping the outer edge of the heating plate; a ceramic ring located at the bottom of the exhaust ring and surrounding the heating plate top ring, and the contact surface between the ceramic ring and the heating plate top ring is matched with each other.

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