Method, system and equipment for dynamically monitoring junction temperature of crimping device and medium

Abstract

The invention relates to the technical field of electronic devices, and discloses a method, a system, equipment and a medium for dynamically monitoring the junction temperature of a crimping device, and the method comprises the steps: constructing an equivalent thermal resistance model of the tested crimping device through a press-fitting topological structure between the tested crimping device and a water-cooling radiator and an operation condition of the press-fitting topological structure; by designing the temperature measurement reference point and monitoring the hot spot temperature on the contact surface of the radiator when the tested crimping device works, the thermal resistance and waterway part of the radiator is omitted, the junction temperature estimation precision is improved, and the junction temperature calculation process is simplified. And further, inputting the voltage information and the current information in the current acquisition period and the temperature of the temperature measurement reference point into the equivalent thermal resistance model for decoupling, and obtaining the junction temperature of the tested crimping device. The temperature measuring points are reasonably designed on the radiator, so that the problem of selection of the temperature measuring points caused by limitation of voltage endurance capability is effectively avoided, and the accuracy of junction temperature measurement of the crimping device is remarkably improved.

Description

Technical Field

[0001] This invention relates to the field of electronic device technology, and in particular to a method, system, device and medium for dynamic monitoring of junction temperature of a crimped device. Background Technology

[0002] Large-scale offshore wind power converter stations face numerous challenges, including harsh operating environments and high operation and maintenance costs. Further research and improvement of the reliability of flexible DC converter valves at offshore stations are crucial to ensuring the efficient absorption and utilization of large-scale offshore wind power resources.

[0003] Currently, offshore flexible DC transmission projects are increasingly using press-fit devices to address the challenges of significantly increased capacity in offshore converter stations. The junction temperature of the core component, the press-fit insulated-gate bipolar transistor (IGBT), is difficult to measure directly. Current methods for measuring the junction temperature of press-fit devices are often limited by voltage withstand capability, leading to inaccurate measurements. Summary of the Invention

[0004] In view of this, the present invention provides a method, system, device and medium for dynamic monitoring of junction temperature of crimped devices, which solves the technical problem that current methods for measuring junction temperature of crimped devices are prone to inaccurate measurement of junction temperature due to limitations in the selection of temperature measurement points caused by the withstand voltage.

[0005] The first aspect of this invention provides a method for dynamic monitoring of the junction temperature of a press-fit device, comprising:

[0006] Based on the press-fit topology and operating conditions between the press-fit device under test and the water-cooled radiator, an equivalent thermal resistance model of the press-fit device under test is constructed; wherein, the water-cooled radiator includes a temperature measurement reference point for measuring the temperature of the press-fit device under test, and the temperature measurement reference point is located on the contact surface of the water-cooled radiator corresponding to the press-fit device under test.

[0007] The voltage and current information of the pressure-connected device under test, as well as the temperature of the temperature reference point, are acquired during the current acquisition cycle.

[0008] The voltage and current information of the pressure-connected device under test in the current acquisition cycle, as well as the temperature input of the temperature reference point, are decoupled into the equivalent thermal resistance model to obtain the junction temperature of the pressure-connected device under test in the current acquisition cycle.

[0009] Preferably, the pressure-fit device under test is a pressure-fit device that separately packages an IGBT, and the water-cooled heat sink includes a first heat sink and a second heat sink; the pressure-fit device under test is disposed between the first heat sink and the second heat sink;

[0010] The equivalent thermal path relationship of the equivalent thermal resistance model of the pressure-connected device under test is as follows:

[0011]

[0012]

[0013]

[0014] In the formula, T is the junction temperature of the IGBT. hsA T represents the temperature of the reference point corresponding to the first radiator. hsB This refers to the temperature of the reference point corresponding to the second radiator. The junction-to-case thermal resistance between the IGBT and the first heatsink. The junction-to-case thermal resistance at the contact point between the IGBT and the second heatsink. The contact thermal resistance between the IGBT and the first heatsink. The contact thermal resistance between the IGBT and the second heatsink. This refers to the heat loss of the IGBT through the first heat sink. P represents the heat loss of the IGBT through the second heat sink. loss This represents the total loss of the IGBT.

[0015] Preferably, the pressure-connected device under test is a pressure-connected device that simultaneously encapsulates an IGBT, the pressure-connected device under test includes an IGBT and a diode connected in anti-parallel with the IGBT, the water-cooled heat sink includes a third heat sink and a fourth heat sink; the pressure-connected device under test is disposed between the third heat sink and the fourth heat sink;

[0016] The equivalent thermal path relationship of the equivalent thermal resistance model of the pressure-connected device under test is as follows:

[0017]

[0018]

[0019]

[0020]

[0021]

[0022]

[0023] In the formula, This refers to the junction temperature of the IGBT. T is the junction temperature of the diode. hsA T represents the temperature of the reference point corresponding to the third radiator. hsBThis refers to the temperature of the reference point corresponding to the fourth radiator. The junction-to-case thermal resistance at the contact point between the IGBT and the third heatsink. The contact thermal resistance between the IGBT and the third heatsink. The junction-to-case thermal resistance at the contact point between the IGBT and the fourth heatsink. The contact thermal resistance between the IGBT and the fourth heatsink. The junction-case thermal resistance at the contact point between the diode and the third heat sink. The contact thermal resistance between the diode and the third heat sink. The junction-to-case thermal resistance of the diode at the contact point with the fourth heat sink. The contact thermal resistance between the diode and the fourth heat sink. This refers to the heat loss of the IGBT through the third heat sink. This refers to the heat loss of the IGBT through the fourth heat sink. This refers to the loss due to heat dissipation of the diode via the third heat sink. P represents the loss of the diode due to heat dissipation via the fourth heat sink. lossI P represents the total loss of the IGBT. lossD This represents the total loss of the diode.

[0024] Preferably, the step of decoupling the voltage and current information of the pressure-connected device under test in the current acquisition cycle, and the temperature input of the temperature reference point, into the equivalent thermal resistance model to obtain the junction temperature of the pressure-connected device under test in the current acquisition cycle includes:

[0025] Based on the voltage and current information of the tested crimped device in the current acquisition cycle, determine the conduction loss and switching loss of the tested crimped device in the current acquisition cycle;

[0026] Based on the conduction loss and the switching loss, determine the total loss of the tested crimped device in the current acquisition cycle;

[0027] The total loss and the temperature of the temperature measurement reference point are input into the equivalent thermal resistance model for decoupling to obtain the junction temperature of the pressure-connected device under test in the current acquisition cycle.

[0028] In a second aspect, the present invention also provides a dynamic monitoring system for junction temperature of a press-fit device, comprising: a water-cooled heat sink, a status monitoring module, a temperature monitoring module, and a junction temperature calculation unit;

[0029] The water-cooled heat sink is in contact with the crimped device under test, and the water-cooled heat sink is used to dissipate heat from the crimped device under test; the water-cooled heat sink includes a temperature reference point for measuring the temperature of the crimped device under test, and the temperature reference point is located on the contact surface of the water-cooled heat sink corresponding to the crimped device under test.

[0030] The status monitoring module is used to acquire the voltage and current information of the tested crimping device during the current acquisition cycle;

[0031] The temperature monitoring module is used to obtain the temperature of the temperature measurement reference point within the current acquisition cycle;

[0032] The junction temperature calculation unit is used to decouple the voltage and current information of the press-fit device under test in the current acquisition cycle, as well as the temperature of the temperature measurement reference point, into a preset equivalent thermal resistance model to obtain the junction temperature of the press-fit device under test in the current acquisition cycle; wherein, the preset equivalent thermal resistance model is constructed based on the press-fit topology between the press-fit device under test and the water-cooled radiator and the operating conditions.

[0033] Preferably, the water-cooled radiator includes a first radiator and a second radiator; the pressure-connected device under test is disposed between the first radiator and the second radiator;

[0034] Each radiator includes a water-cooled radiator inlet, a water-cooled radiator outlet, and water-cooled radiator channels;

[0035] The water inlet of the water-cooled radiator is connected to the water outlet of the water-cooled radiator through the water channel of the water-cooled radiator;

[0036] The water-cooled radiator has a contact layer on the side of the water channel near the pressure-connected device under test. The contact layer is grooved and has the temperature measurement reference point.

[0037] Preferably, the temperature monitoring module includes a temperature-sensing fiber optic sensor head, a temperature-sensing fiber, and a fiber optic temperature transmitter;

[0038] The temperature-measuring fiber optic sensor head is connected to the fiber optic temperature transmitter via the temperature-measuring fiber optic cable.

[0039] Preferably, the junction temperature calculation unit includes a device loss calculation module and a junction temperature calculation module;

[0040] The device loss calculation module is used to determine the conduction loss and switching loss of the tested crimped device in the current acquisition cycle based on the voltage and current information of the tested crimped device in the current acquisition cycle, and to determine the total loss of the tested crimped device in the current acquisition cycle based on the conduction loss and the switching loss; it is also used to send the total loss to the junction temperature calculation module.

[0041] The junction temperature calculation module is used to input the total loss and the temperature of the temperature measurement reference point into the preset equivalent thermal resistance model for decoupling, so as to obtain the junction temperature of the pressure-connected device under test in the current acquisition cycle.

[0042] Thirdly, the present invention provides an electronic device, the electronic device including a memory and a processor, the memory storing a computer program, the computer program being executed by the processor causing the processor to perform the steps of the dynamic monitoring method for junction temperature of the crimping device as described in the first aspect.

[0043] Fourthly, the present invention provides a computer-readable storage medium having a computer program stored thereon, which, when executed, implements the steps of the dynamic monitoring method for junction temperature of a crimping device as described in the first aspect.

[0044] As can be seen from the above technical solution, this invention constructs an equivalent thermal resistance model of the press-fit device under test based on the press-fit topology between the press-fit device and the water-cooled heat sink and its operating conditions. By designing a temperature reference point, the hot spot temperature on the heat sink contact surface is monitored when the press-fit device is working, thereby omitting the thermal resistance and water circuit of the heat sink, improving the accuracy of junction temperature estimation, and simplifying the junction temperature calculation process. Furthermore, the voltage and current information in the current acquisition cycle, as well as the temperature of the temperature reference point, are input into the equivalent thermal resistance model for decoupling to obtain the junction temperature of the press-fit device under test. By rationally designing the temperature measurement point on the heat sink, the problem of temperature measurement point selection caused by the voltage withstand capability limitation is effectively avoided, significantly improving the accuracy of junction temperature measurement of the press-fit device. Attached Figure Description

[0045] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0046] Figure 1 This invention provides an application environment for a method for dynamic monitoring of junction temperature of a crimped device.

[0047] Figure 2 A flowchart illustrating a method for dynamic monitoring of junction temperature of a crimping device provided in an embodiment of the present invention;

[0048] Figure 3 An equivalent thermal resistance model for a press-fit device for a separately packaged IGBT provided in an embodiment of the present invention;

[0049] Figure 4 An equivalent thermal resistance model for a press-fit device that simultaneously encapsulates an IGBT, provided for embodiments of the present invention;

[0050] Figure 5This is a schematic diagram of a dynamic monitoring system for junction temperature of a crimping device provided in an embodiment of the present invention;

[0051] Figure 6 This is a schematic diagram of a partial press-fit structure for double-sided pressing of IGBTs provided in an embodiment of the present invention;

[0052] Figure 7 This is a schematic diagram of the structure of the first heat sink provided in an embodiment of the present invention;

[0053] Figure 8 This is a schematic diagram of the structure of the second heat sink provided in an embodiment of the present invention;

[0054] Figure 9 This is a schematic diagram of the structure of a temperature monitoring module provided in an embodiment of the present invention;

[0055] Figure 10 This is a program logic diagram for calculating junction temperature provided in an embodiment of the present invention;

[0056] Figure 11 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present invention. Detailed Implementation

[0057] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0058] The dynamic monitoring method for junction temperature of crimped devices provided in this application can be applied to, for example... Figure 1 In the application environment shown, terminal 101 communicates with server 102 via a network. A data storage system can store the data that server 102 needs to process. The data storage system can be integrated onto server 102 or placed in the cloud or on another network server. Terminal 101 or server 102 constructs an equivalent thermal resistance model of the press-fit device under test based on the press-fit topology and operating conditions between the press-fit device and the water-cooled radiator. The water-cooled radiator includes a temperature reference point for measuring the temperature of the press-fit device under test, located on the contact surface of the water-cooled radiator corresponding to the press-fit device. The voltage and current information of the press-fit device under test, as well as the temperature of the temperature reference point, are acquired during the current acquisition cycle. The voltage and current information of the press-fit device under test, along with the temperature of the temperature reference point, are input into the equivalent thermal resistance model for decoupling to obtain the junction temperature of the press-fit device under test during the current acquisition cycle.

[0059] Terminal 101 can be, but is not limited to, various personal computers, laptops, smartphones, and tablets.

[0060] Server 102 can be a standalone physical server, a server cluster or distributed system consisting of multiple physical servers, or a cloud server that provides cloud computing services.

[0061] like Figure 2 As shown, this application provides a method for dynamic monitoring of the junction temperature of a crimping device, which is applied to... Figure 1 Taking terminal 101 or server 102 as an example, the explanation includes the following steps S1 to S3. Wherein:

[0062] Step S1: Based on the press-fit topology and operating conditions between the press-fit device under test and the water-cooled heat sink, construct an equivalent thermal resistance model of the press-fit device under test; wherein, the water-cooled heat sink includes a temperature reference point for measuring the temperature of the press-fit device under test, and the temperature reference point is set on the contact surface of the water-cooled heat sink corresponding to the press-fit device under test.

[0063] Based on information such as the package type and material of the press-fit device under test, the structural parameters of the water-cooled heat sink, and the press-fit structure between the press-fit device and the water-cooled heat sink, an equivalent thermal resistance model of the press-fit device under test is constructed. This equivalent thermal resistance model accurately reflects the heat transfer relationship between the press-fit device and the water-cooled heat sink, providing a foundation for subsequent temperature monitoring and junction temperature calculation. When constructing the equivalent thermal resistance model, the actual operating conditions of the press-fit device under test, such as operating current, operating voltage, and switching frequency, must also be considered to ensure the accuracy and practicality of the equivalent thermal resistance model.

[0064] Simultaneously, a temperature reference point is set on the contact surface of the water-cooled heat sink corresponding to the pressure-connected device under test. Since this reference point can monitor the hot spot temperature on the heat sink contact surface when the pressure-connected device is operating, the reference point can be moved from the conventional side of the heat sink to the hot spot on the heat dissipation surface, thus decoupling the relationship between the device junction temperature and the thermal resistance and water circuit of the water-cooled heat sink. By setting the temperature reference point, the thermal resistance and water circuit of the heat sink can be omitted when estimating the junction temperature, resulting in a more accurate measurement of the device's hot spot temperature and simplifying the junction temperature calculation process.

[0065] Step S2: Obtain the voltage and current information of the pressure-connected device under test during the current acquisition cycle, as well as the temperature of the temperature reference point.

[0066] The process involves real-time acquisition of voltage and current information from the tested press-fit device, along with real-time acquisition of the temperature at a reference point using temperature sensors. This acquired information is used in subsequent junction temperature calculations to ensure accuracy and real-time performance. During the acquisition process, the acquired data must be filtered to eliminate the impact of noise on the results.

[0067] Step S3: Decouple the voltage and current information of the pressure-connected device under test in the current acquisition cycle, as well as the temperature of the temperature reference point, into the equivalent thermal resistance model to obtain the junction temperature of the pressure-connected device under test in the current acquisition cycle.

[0068] Based on the voltage and current information of the pressure-connected device under test, the loss of the device during the current acquisition cycle can be calculated. Then, the measured temperature of the reference temperature point and the loss of the pressure-connected device are input into the previously constructed equivalent thermal resistance model. The equivalent thermal resistance model can simulate the heat transfer process between the pressure-connected device and the water-cooled radiator. Through calculation using the equivalent thermal resistance model, the junction temperature of the pressure-connected device during the current acquisition cycle can be obtained.

[0069] It should be noted that this embodiment constructs an equivalent thermal resistance model of the press-fit device under test (PUT) based on the press-fit topology between the PUT and the water-cooled heatsink and its operating conditions. By designing a temperature reference point, the hot spot temperature on the heatsink contact surface is monitored when the PUT is operating, thereby omitting the heatsink's thermal resistance and water circuit components, improving the accuracy of junction temperature estimation, and simplifying the junction temperature calculation process. Furthermore, the voltage and current information within the current acquisition cycle, as well as the temperature of the temperature reference point, are input into the equivalent thermal resistance model for decoupling to obtain the junction temperature of the PUT. By rationally designing the temperature measurement point on the heatsink, the problem of selecting the temperature measurement point due to voltage withstand capability limitations is effectively avoided, significantly improving the accuracy of junction temperature measurement of the PUT.

[0070] In practical applications, the type of crimping device under test can be determined according to the operating conditions. Different types of crimping devices have different equivalent thermal resistance models, which affects the calculation results of junction temperature.

[0071] The press-fit devices under test include press-fit devices that encapsulate IGBTs separately and press-fit devices that encapsulate IGBTs simultaneously.

[0072] In this context, a press-fit device that individually packages an IGBT refers to encapsulating a single semiconductor device (such as an IGBT chip) into a standalone unit. Unlike integrated packaging (which combines multiple devices into one package), it encapsulates a single IGBT chip within a press-fit package to facilitate efficient current control and good thermal management in high-power applications. This packaging method is particularly suitable for applications requiring high reliability and high power density.

[0073] Simultaneous IGBT press-fit devices refer to devices that encapsulate IGBTs and other semiconductor devices such as diodes within a single press-fit package. This packaging method reduces device size, increases power density, and, due to the matching thermal and electrical characteristics of the IGBT and diodes, allows for better thermal management and current control. Simultaneous IGBT press-fit devices have wide applications in high-power power electronic systems, such as motor drives, wind power generation, and electric vehicles. This packaging method improves system efficiency and reliability while reducing system cost and complexity.

[0074] In some embodiments, the pressure-fit device under test is a pressure-fit device that separately encapsulates an IGBT, and the water-cooled heat sink includes a first heat sink and a second heat sink; the pressure-fit device under test is disposed between the first heat sink and the second heat sink.

[0075] For example, such as Figure 3 As shown, the equivalent thermal resistance model of the press-fit device under test is constructed based on the press-fit topology. The equivalent thermal resistance model of the press-fit device under test includes the first IGBT loss 23, the first IGBT junction temperature 24, the first IGBT equivalent single-sided thermal resistance 25, the first IGBT equivalent single-sided contact thermal resistance 26, the first IGBT single-sided heat dissipation power 27, the temperature of the measuring point of the first A-side water-cooled heat sink 28, the second IGBT equivalent single-sided thermal resistance 29, the second IGBT equivalent single-sided contact thermal resistance 30, the power of the first IGBT single-sided heat sink 31, and the first B-side water... The temperature at the heat sink measurement point is 32. Among them, the first IGBT loss 23, the first IGBT equivalent single-sided thermal resistance 25, the first IGBT equivalent single-sided contact thermal resistance 26, the temperature at the first A-side water-cooled heat sink measurement point 28, the second IGBT equivalent single-sided thermal resistance 29, the second IGBT equivalent single-sided contact thermal resistance 30, and the temperature at the first B-side water-cooled heat sink measurement point 32 are known parameters. The first IGBT junction temperature 24, the first IGBT single-sided heat dissipation power 27, and the first IGBT single-sided heat sink power 31 are parameters estimated by this model.

[0076] The equivalent thermal path relationship of the equivalent thermal resistance model of the press-fit device under test is as follows:

[0077]

[0078]

[0079]

[0080] In the formula, T is the junction temperature of the IGBT. hsA T represents the temperature of the reference point corresponding to the first radiator. hsB This refers to the temperature of the reference point corresponding to the second radiator. The junction-to-case thermal resistance between the IGBT and the first heatsink. The junction-to-case thermal resistance at the contact point between the IGBT and the second heatsink. The contact thermal resistance between the IGBT and the first heatsink. The contact thermal resistance between the IGBT and the second heatsink. This refers to the heat loss of the IGBT through the first heat sink. P represents the heat loss of the IGBT through the second heat sink. loss This represents the total loss of the IGBT.

[0081] In some embodiments, the pressure-connected device under test is a pressure-connected device that simultaneously encapsulates an IGBT. The pressure-connected device under test includes an IGBT and a diode connected in antiparallel to the IGBT. The water-cooled heat sink includes a third heat sink and a fourth heat sink. The pressure-connected device under test is disposed between the third heat sink and the fourth heat sink.

[0082] For example, such as Figure 4As shown, the equivalent thermal resistance model of the press-fit device under test is constructed based on the press-fit topology. The equivalent thermal resistance model of the press-fit device under test includes the second IGBT loss 33, the second IGBT junction temperature 34, the third IGBT equivalent single-sided thermal resistance 35, the third IGBT equivalent single-sided contact thermal resistance 36, the second IGBT single-sided heat dissipation power 37, the fourth IGBT equivalent single-sided thermal resistance 38, the fourth IGBT equivalent single-sided contact thermal resistance 39, the third IGBT single-sided heat dissipation power 40, the diode loss 41, the diode junction temperature 42, the first diode equivalent single-sided thermal resistance 43, the first diode equivalent single-sided contact thermal resistance 44, the first diode single-sided heat dissipation power 45, the second diode equivalent single-sided thermal resistance 46, the second diode equivalent single-sided contact thermal resistance 47, the diode single-sided heat dissipation power 48, the temperature of the A-side water-cooled radiator measuring point 49, and the temperature of the second B-side water-cooled radiator measuring point 50. Among them, the second IGBT loss 33, the third IGBT equivalent single-sided thermal resistance 35, the third IGBT equivalent single-sided contact thermal resistance 36, the fourth IGBT equivalent single-sided thermal resistance 38, the fourth IGBT equivalent single-sided contact thermal resistance 39, the diode loss 41, the first diode equivalent single-sided thermal resistance 43, the first diode equivalent single-sided contact thermal resistance 44, the second diode equivalent single-sided thermal resistance 46, the second diode equivalent single-sided contact thermal resistance 47, the temperature of the A-side water-cooled heat sink measuring point 49, and the temperature of the second B-side water-cooled heat sink measuring point 50 are known parameters. The second IGBT junction temperature 34, the second IGBT single-sided heat dissipation power 37, the third IGBT single-sided heat dissipation power 40, the diode junction temperature 42, the first diode single-sided heat dissipation power 45, and the second diode single-sided heat sink power 48 are parameters estimated by this equivalent thermal resistance model.

[0083] The equivalent thermal path relationship of the equivalent thermal resistance model of the pressure-connected device under test is as follows:

[0084]

[0085]

[0086]

[0087]

[0088]

[0089]

[0090] In the formula, This refers to the junction temperature of the IGBT. T is the junction temperature of the diode. hsA T represents the temperature of the reference point corresponding to the third radiator. hsB This refers to the temperature of the reference point corresponding to the fourth radiator. The junction-to-case thermal resistance at the contact point between the IGBT and the third heatsink. The contact thermal resistance between the IGBT and the third heatsink. The junction-to-case thermal resistance at the contact point between the IGBT and the fourth heatsink. The contact thermal resistance between the IGBT and the fourth heatsink. The junction-case thermal resistance at the contact point between the diode and the third heat sink. The contact thermal resistance between the diode and the third heat sink. The junction-to-case thermal resistance of the diode at the contact point with the fourth heat sink. The contact thermal resistance between the diode and the fourth heat sink. This refers to the heat loss of the IGBT through the third heat sink. This refers to the heat loss of the IGBT through the fourth heat sink. This refers to the loss due to heat dissipation of the diode via the third heat sink. P represents the loss of the diode due to heat dissipation via the fourth heat sink. lossI P represents the total loss of the IGBT. lossD This represents the total loss of the diode.

[0091] In some embodiments, the junction temperature of the press-fit device under test during the current acquisition cycle is obtained by decoupling it into the equivalent thermal resistance model based on the voltage and current information of the press-fit device under test during the current acquisition cycle, and the temperature input of the temperature reference point, including:

[0092] Step S301: Based on the voltage and current information of the pressure-connected device under test in the current acquisition cycle, determine the conduction loss and switching loss of the pressure-connected device under test in the current acquisition cycle.

[0093] Among them, conduction loss is the loss generated by the current passing through the tested crimped device under normal operating conditions. It is proportional to the on-resistance of the device and the square of the current flowing through the device.

[0094] Switching loss is the loss generated by the voltage and current changes of the tested crimped device during the switching process. It is related to the switching frequency, switching time and voltage and current waveforms during the switching process.

[0095] The conduction loss of the tested crimped device is based on the slope resistance r of the device's voltage drop curve. T and threshold voltage U T The current i obtained and connected to the device is the amount of current i. cond The current sampling interval is also relevant; it is a result accumulated over a certain sampling time length T. The device's voltage drop V... cond The following relationships exist between the device's on-current, slope resistance, and threshold voltage:

[0096] .

[0097] Since the voltage drop curve of the device is related to the junction temperature, the slope resistance r T and threshold voltage U T The calculation should be based on the device's junction temperature, and should be related to the device junction temperature T. vj The conversion relationship is as follows:

[0098]

[0099]

[0100] Where, r 25 The slope resistance of the device's voltage drop curve at a junction temperature of 25°C is r. 125 U is the slope resistance of the device's voltage drop curve at 125°C. 25 U represents the threshold voltage of the device's voltage drop curve at a junction temperature of 25°C. 125 This represents the threshold voltage of the device's voltage drop curve at a junction temperature of 125°C. Since the device junction temperature is based on the calculated device losses, it is updated at time intervals of T. The device voltage drop curve parameters are updated based on the latest device junction temperature.

[0101] Switching losses are obtained based on parameters a, b, and c of the quadratic curve of device switching losses, and are related to the switching current I of the device. sw and device switching voltage V d And obtain the device's rated voltage U nom The relevant factor is the result accumulated over a certain sampling time length T. The switching loss E of the device... sw The following relationships exist between the device switching voltage, the device rated voltage, and the parameters of the quadratic curve of switching losses:

[0102] .

[0103] Device switching losses are also related to junction temperature. The quadratic curve of device switching losses should be calculated based on the device's junction temperature T. vj The conversion relationship is as follows:

[0104]

[0105]

[0106]

[0107] In the formula, a 25 b 25 c 25 Here are the parameters of the quadratic curve of switching loss of the device at rated voltage and junction temperature of 25℃, a125 b 125 c 125 For the device at rated voltage U nom The switching loss quadratic curve parameters are as follows: Since the device junction temperature is based on the calculated device loss, and the device junction temperature is updated at time intervals T, the device switching loss quadratic curve parameters are based on the latest device junction temperature.

[0108] Based on the above settings, the cumulative calculation method for the conduction loss of the monitored device based on the sampling time T is as follows:

[0109]

[0110] In the formula, i cond [i] represents the current at the i-th conducting sampling point of the monitored device within the sampling duration T. Based on the judgment of the device's conduction state, the device accumulates n current sampling points during this period, with a sampling interval of ΔT. The cumulative calculation method for the switching loss of the monitored device over the sampling duration T is as follows:

[0111]

[0112] In the formula, I sw [k] represents the current at the k-th switch sampling point of the monitored device within the sampling duration T, V. d [k] represents the voltage at the kth switch sampling point. Based on the judgment of the switch state during the period, the device has a total of m switches during this period.

[0113] Step S302: Determine the total loss of the tested crimped device in the current acquisition cycle based on the conduction loss and switching loss.

[0114] At the end of a sampling period of duration T, the total loss of the monitored device can be obtained as follows:

[0115] .

[0116] Step S303: Input the total loss and the temperature of the temperature measurement reference point into the equivalent thermal resistance model for decoupling, and obtain the junction temperature of the pressure-connected device under test in the current acquisition cycle.

[0117] The total loss P loss and the temperature of the reference point T hsA and T hsB As input parameters, these parameters are substituted into the equivalent thermal resistance model constructed above for calculation. Based on the network relationship between thermal resistance and thermal capacity, this model can simulate the transfer and distribution of heat inside the pressure-connected device under test, thereby decoupling the junction temperatures of the IGBT and diode.

[0118] For example, the junction temperature-dependent loss of a press-fit device that separately packages an IGBT is P, which is the total loss of the internal IGBT. loss The temperature T at the monitoring points on both sides of the device is obtained through a set fiber optic temperature sensor. hsA and T hsB Based on the equivalent thermal resistance model of a separately packaged IGBT, the relationship is rearranged into a linear matrix, yielding the following parameter matrix:

[0119]

[0120] Since the thermal resistance parameters of the IGBT are known, after obtaining the temperatures at the monitoring points on both sides of the device and completing the device loss calculation, the following IGBT junction temperature and single-sided loss results can be obtained:

[0121]

[0122] As another example, the junction temperature-dependent losses of a press-fit device that simultaneously encapsulates an IGBT and a diode include the total internal IGBT loss P. lossI and the total diode loss P lossD Temperatures ThsA and ThsB at two monitoring points on both sides of the device are obtained using a set fiber optic temperature sensor. Based on the equivalent thermal resistance model of simultaneously packaged IGBTs, their relationship is rearranged into a linear matrix, yielding the following parameter matrix:

[0123]

[0124] Since the thermal resistance parameters of both the IGBT and the diode are known, after obtaining the temperatures at the monitoring points on both sides of the device and completing the device loss calculation, the following results can be obtained: IGBT junction temperature, diode junction temperature, and single-sided loss:

[0125]

[0126] It should be noted that the embodiments of this application monitor the hot spot temperature of the heat sink of the crimping device in real time and estimate the junction temperature of the crimping device in real time by establishing an equivalent thermal path model based on the junction temperature reference point. This helps to evaluate the junction temperature of the device under different operating conditions in real time through experimental methods, further achieving a close approximation of the actual junction temperature of the device. It also helps in the evaluation and optimization of the device heat sink design.

[0127] like Figure 5 As shown, this application provides a dynamic monitoring system for junction temperature of a crimped device, including: a water-cooled heat sink 100, a status monitoring module 200, a temperature monitoring module 300, and a junction temperature calculation unit 400.

[0128] The water-cooled radiator 100 is in contact with the pressure-connected device 500 under test, and the water-cooled radiator 100 is used to dissipate heat from the pressure-connected device 500 under test; the water-cooled radiator 100 includes a temperature reference point for measuring the temperature of the pressure-connected device 500 under test, and the temperature reference point is located on the contact surface of the water-cooled radiator 100 corresponding to the pressure-connected device 500 under test.

[0129] The status monitoring module 200 is used to acquire the voltage and current information of the pressure-connected device 500 under test during the current acquisition cycle;

[0130] Temperature monitoring module 300 is used to acquire the temperature of the temperature measurement reference point within the current acquisition cycle;

[0131] The junction temperature calculation unit 400 is used to decouple the voltage and current information of the pressure-fitted device 500 under test in the current acquisition cycle and the temperature of the temperature reference point into a preset equivalent thermal resistance model to obtain the junction temperature of the pressure-fitted device 500 under test in the current acquisition cycle. The preset equivalent thermal resistance model is constructed based on the press-fit topology between the pressure-fitted device 500 under test and the water-cooled radiator 100 and the operating conditions.

[0132] The pressure-connected device under test is a pressure-connected device with a separately packaged IGBT, and the water-cooled heat sink includes a first heat sink and a second heat sink; the pressure-connected device under test is located between the first heat sink and the second heat sink;

[0133] The equivalent thermal path relationship of the equivalent thermal resistance model of the press-fit device under test is as follows:

[0134]

[0135]

[0136]

[0137] In the formula, T is the junction temperature of the IGBT. hsA T represents the temperature of the reference point corresponding to the first radiator. hsB This refers to the temperature of the reference point corresponding to the second radiator. The junction-to-case thermal resistance between the IGBT and the first heatsink. The junction-to-case thermal resistance at the contact point between the IGBT and the second heatsink. The contact thermal resistance between the IGBT and the first heatsink. The contact thermal resistance between the IGBT and the second heatsink. This refers to the heat loss of the IGBT through the first heat sink. P represents the heat loss of the IGBT through the second heat sink. loss This represents the total loss of the IGBT.

[0138] The pressure-connected device under test is a pressure-connected device that simultaneously encapsulates an IGBT. The pressure-connected device under test includes an IGBT and a diode connected in anti-parallel with the IGBT. The water-cooled heat sink includes a third heat sink and a fourth heat sink. The pressure-connected device under test is located between the third heat sink and the fourth heat sink.

[0139] The equivalent thermal path relationship of the equivalent thermal resistance model of the press-fit device under test is as follows:

[0140]

[0141]

[0142]

[0143]

[0144]

[0145]

[0146] In the formula, This refers to the junction temperature of the IGBT. T is the junction temperature of the diode. hsA T represents the temperature of the reference point corresponding to the third radiator. hsB This refers to the temperature of the reference point corresponding to the fourth radiator. The junction-to-case thermal resistance at the contact point between the IGBT and the third heatsink. The contact thermal resistance between the IGBT and the third heatsink. The junction-to-case thermal resistance at the contact point between the IGBT and the fourth heatsink. The contact thermal resistance between the IGBT and the fourth heatsink. The junction-case thermal resistance at the contact point between the diode and the third heat sink. The contact thermal resistance between the diode and the third heat sink. The junction-to-case thermal resistance of the diode at the contact point with the fourth heat sink. The contact thermal resistance between the diode and the fourth heat sink. This refers to the heat loss of the IGBT through the third heat sink. This refers to the heat loss of the IGBT through the fourth heat sink. This refers to the loss due to heat dissipation of the diode via the third heat sink. P represents the loss of the diode due to heat dissipation via the fourth heat sink. lossI P represents the total loss of the IGBT. lossD This represents the total loss of the diode.

[0147] In some embodiments, the water-cooled radiator includes a first radiator and a second radiator; the pressure-connected device under test is disposed between the first radiator and the second radiator;

[0148] Each radiator includes a water-cooled radiator inlet, a water-cooled radiator outlet, and water-cooled radiator channels;

[0149] The water inlet of the water-cooled radiator is connected to the water outlet of the water-cooled radiator through the water channel of the water-cooled radiator;

[0150] The water-cooled radiator has a contact layer on the side of the water channel closest to the pressure-connected device being tested. The contact layer has grooves and a temperature reference point.

[0151] For example, such as Figure 6 As shown, the IGBT partial press-fit structure with double-sided press-fit using a water-cooled heat sink includes: the monitored press-fit device 10, the A-side water-cooled heat sink 11, the A-side water-cooled heat sink inlet 12, the A-side water-cooled heat sink outlet 13, the A-side water-cooled heat sink water channel 14, the A-side water-cooled heat sink reference temperature measuring point 15, the contact layer between the A-side water-cooled heat sink and the device 16, the B-side water-cooled heat sink 17, the B-side water-cooled heat sink inlet 18, the B-side water-cooled heat sink outlet 19, the B-side water-cooled heat sink water channel 20, the B-side water-cooled heat sink reference temperature measuring point 21, and the B-side water-cooled heat sink contact layer 22. The monitored crimped device 10 is located between the A-side water-cooled heat sink 11 and the B-side water-cooled heat sink 17. The A-side water-cooled heat sink inlet 12 is connected to the A-side water-cooled heat sink outlet 13 through the A-side water-cooled heat sink channel 14. The A-side water-cooled heat sink and the device contact layer 16 is provided with the A-side water-cooled heat sink reference temperature measuring point 15. The B-side water-cooled heat sink inlet 18 is connected to the B-side water-cooled heat sink outlet 19 through the B-side water-cooled heat sink channel 20. The B-side water-cooled heat sink and the device contact layer 22 is provided with the B-side water-cooled heat sink reference temperature measuring point 21.

[0152] Among them, the A-side water-cooled radiator 11 and the B-side water-cooled radiator 17 can adopt the following... Figure 7 The first radiator 6 shown or as Figure 8 The second heat sink 8 shown is provided with a first fiber optic groove 7 that is longitudinally slotted from the edge of the heat sink and extends to the center, and a second fiber optic groove 9 that is obliquely slotted from the edge of the heat sink and extends to the center. For example, in order to ensure that the fiber optic sensing head can reach the center of the heat sink when the temperature measuring fiber is installed, the slot width of the first fiber optic groove 7 and the second fiber optic groove 9 is more than 1.1 times the diameter of the temperature measuring fiber optic sensing head.

[0153] By creating grooves on the contact surfaces of the monitored press-fit device, reference temperature measurement points are obtained for the A-side and B-side water-cooled heat sinks. Since these reference points can monitor the hot spot temperature on the heat sink contact surface during device operation, the temperature reference point in the junction temperature calculation can be shifted from the conventional heat sink side to the hot spot on the heat sink surface, decoupling the relationship between the device junction temperature and the heat sink thermal resistance and water channels. Using this method, the thermal resistance and water channel components of the water-cooled heat sink can be omitted in the junction temperature estimation model, resulting in a more accurate measurement of the device's hot spot temperature and a simplified junction temperature calculation model.

[0154] In some embodiments, such as Figure 9 As shown, the temperature monitoring module includes temperature-sensing fiber optic sensor heads 3 and 5, temperature-sensing fibers 2 and 4, and fiber optic temperature transmitter 1.

[0155] The temperature-measuring fiber optic sensor heads 3 and 5 are connected to the fiber optic temperature transmitter 1 via temperature-measuring fibers 2 and 4.

[0156] The temperature-sensing fiber optic sensor heads 3 and 5 are positioned at the temperature reference points of the water-cooled radiator, namely reference temperature measurement point 15 on side A and reference temperature measurement point 21 on side B, for real-time monitoring of hot spot temperatures on the radiator's contact surface. Temperature-sensing fibers 2 and 4 serve as the transmission medium, transmitting the temperature signals collected by the temperature-sensing fiber optic sensor heads 3 and 5 to the fiber optic temperature transmitter 1. The fiber optic temperature transmitter 1 receives and processes these temperature signals, converting them into digital or analog signals for subsequent data processing and analysis.

[0157] While the temperature monitoring module is operating, the status monitoring module is also acquiring real-time voltage and current information of the press-fit device under test. This information is collected by corresponding sensors or measuring devices and transmitted to the junction temperature calculation unit. Based on the received voltage and current information, as well as the temperature information provided by the temperature monitoring module, the junction temperature calculation unit performs decoupling calculations using a preset equivalent thermal resistance model.

[0158] In some embodiments, the junction temperature calculation unit includes a device loss calculation module and a junction temperature calculation module;

[0159] The device loss calculation module is used to determine the conduction loss and switching loss of the tested crimped device in the current acquisition cycle based on the voltage and current information of the tested crimped device in the current acquisition cycle, and to determine the total loss of the tested crimped device in the current acquisition cycle based on the conduction loss and switching loss; it is also used to send the total loss to the junction temperature calculation module.

[0160] The junction temperature calculation module is used to input the total loss and the temperature of the temperature measurement reference point into the preset equivalent thermal resistance model for decoupling, so as to obtain the junction temperature of the pressure-connected device under test in the current acquisition cycle.

[0161] like Figure 10 As shown, the program logic control for junction temperature calculation includes: the logic starts entering the junction temperature calculation program; the logic configures parameters related to the initial junction temperature and logic loss calculation; the logic determines whether the device is conducting or switching; the logic calculates the device conduction loss based on the junction temperature; the logic calculates the device switching loss based on the junction temperature; the logic calculates the single-step device loss with a sampling time interval ΔT as the step size and accumulates it with the accumulated loss; the logic determines whether the loss accumulation time has reached T; the logic acquires one heat sink temperature measurement point data; and the logic calculates the device junction temperature T based on the device thermal resistance model and the total device loss over a time period of T. vj The calculation is performed, the logic outputs the junction temperature calculation result and ends. In this logic control, setting the logic to "No" indicates that the device is not conducting or has undergone a switching action, that is, the device is in a turn-off steady state or current flows through its parallel reverse freewheeling diode. The logic will wait until the next time period to make another judgment, until the logic is "Yes" and enters the next logic. The logic is set to perform loss accumulation control. If the logic is "No", it means that the device loss accumulation has not yet reached the time T, and the logic will return to continue to perform single-step device loss calculation, until the logic is "Yes" and enters the next logic.

[0162] like Figure 11 As shown, this application provides an electronic device 103, which includes a memory 203 and a processor 303. The memory 203 stores a computer program. When the computer program is executed by the processor 303, the processor 303 performs the steps of the dynamic monitoring method for the junction temperature of the crimping device as described in the above embodiment.

[0163] This application provides a computer-readable storage medium storing a computer program thereon, which, when executed, implements the steps of the dynamic monitoring method for junction temperature of the crimping device as described in the above embodiments.

[0164] This application provides a computer program product, which includes a computer program stored on a non-transitory computer-readable storage medium. The computer program includes program instructions, wherein when the program instructions are executed by a computer, the computer performs the steps of the virtual impedance control parameter optimization method described in the above embodiments.

[0165] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the specific working processes of the systems, electronic devices, and computer storage media described above can be referred to the corresponding processes in the foregoing method embodiments, and will not be repeated here.

[0166] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0167] It should be understood that although the steps in the flowcharts of the embodiments described above are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the embodiments described above may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0168] In the embodiments provided by this invention, it should be understood that the disclosed systems, electronic devices, computer storage media, and methods can be implemented in other ways. For example, the device embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be an indirect coupling or communication connection between devices or units through some interfaces, and may be electrical, mechanical, or other forms.

[0169] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0170] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0171] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a storage medium and includes several instructions for executing all or part of the steps of the methods described in the various embodiments of the present invention through a computer device (which may be a personal computer, a server, or a network device, etc.). The aforementioned storage medium includes: USB flash drives, portable hard drives, read-only memory (ROM), random access memory (RAM), magnetic disks, optical disks, and other media capable of storing program code.

[0172] The above embodiments are only used to illustrate the technical solutions of the present invention, and are not intended to limit it. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method of dynamically monitoring a junction temperature of a crimped device, the method comprising: include: Based on the press-fit topology and operating conditions between the press-fit device under test and the water-cooled radiator, an equivalent thermal resistance model of the press-fit device under test is constructed; wherein, the water-cooled radiator includes a temperature measurement reference point for measuring the temperature of the press-fit device under test, and the temperature measurement reference point is located on the contact surface of the water-cooled radiator corresponding to the press-fit device under test. The voltage and current information of the pressure-connected device under test, as well as the temperature of the temperature reference point, are acquired during the current acquisition cycle. The voltage and current information of the pressure-connected device under test in the current acquisition cycle, as well as the temperature input of the temperature reference point, are decoupled into the equivalent thermal resistance model to obtain the junction temperature of the pressure-connected device under test in the current acquisition cycle.

2. The crimped device junction temperature dynamic monitoring method of claim 1, wherein, The pressure-fit device under test is a pressure-fit device for a separately packaged IGBT, and the water-cooled heat sink includes a first heat sink and a second heat sink; the pressure-fit device under test is disposed between the first heat sink and the second heat sink; The equivalent thermal path relationship of the equivalent thermal resistance model of the pressure-connected device under test is as follows: In the formula, T is the junction temperature of the IGBT, hsA T is the temperature of the temperature measurement reference point corresponding to the first heat sink, hsB T is the temperature of the temperature measurement reference point corresponding to the second heat sink, R is the junction-case thermal resistance of the IGBT in contact with the first heat sink, R is the junction-case thermal resistance of the IGBT in contact with the second heat sink, R is the contact thermal resistance of the IGBT in contact with the first heat sink, R is the contact thermal resistance of the IGBT in contact with the second heat sink, P is the loss of the IGBT dissipated through the first heat sink, P is the loss of the IGBT dissipated through the second heat sink, loss P is the total loss of the IGBT.

3. The crimped device junction temperature dynamic monitoring method of claim 1, wherein, The pressure-connected device under test is a pressure-connected device that simultaneously encapsulates an IGBT. The pressure-connected device under test includes an IGBT and a diode connected in anti-parallel with the IGBT. The water-cooled heat sink includes a third heat sink and a fourth heat sink. The pressure-connected device under test is disposed between the third heat sink and the fourth heat sink. The equivalent thermal path relationship of the equivalent thermal resistance model of the pressure-connected device under test is as follows: In the formula, Tj is the IGBT junction temperature, Tj is the diode junction temperature, hsA T is the temperature of the third heat sink corresponding to the temperature measurement reference point, hsB T is the temperature of the fourth heat sink corresponding to the temperature measurement reference point, Rjc3 is the junction-to-case thermal resistance of the IGBT in contact with the third heat sink, Rc3 is the contact thermal resistance of the IGBT in contact with the third heat sink, Rjc4 is the junction-to-case thermal resistance of the IGBT in contact with the fourth heat sink, Rc4 is the contact thermal resistance of the IGBT in contact with the fourth heat sink, Rjc3 is the junction-to-case thermal resistance of the diode in contact with the third heat sink, Rc3 is the contact thermal resistance of the diode in contact with the third heat sink, Rjc4 is the junction-to-case thermal resistance of the diode in contact with the fourth heat sink, Rc4 is the contact thermal resistance of the diode in contact with the fourth heat sink, Pd3 is the loss of the IGBT dissipated through the third heat sink, Pd4 is the loss of the IGBT dissipated through the fourth heat sink, Pd3 is the loss of the diode dissipated through the third heat sink, Pd4 is the loss of the diode dissipated through the fourth heat sink, lossI P is the total loss of the IGBT, lossD P is the total loss of the diode.

4. The crimped device junction temperature dynamic monitoring method according to any one of claims 1 to 3, characterized in that, The step of decoupling the voltage and current information of the pressure-connected device under test in the current acquisition cycle, and the temperature input of the temperature reference point, into the equivalent thermal resistance model to obtain the junction temperature of the pressure-connected device under test in the current acquisition cycle includes: Based on the voltage and current information of the tested crimped device in the current acquisition cycle, determine the conduction loss and switching loss of the tested crimped device in the current acquisition cycle; Based on the conduction loss and the switching loss, determine the total loss of the tested crimped device in the current acquisition cycle; The total loss and the temperature of the temperature measurement reference point are input into the equivalent thermal resistance model for decoupling to obtain the junction temperature of the pressure-connected device under test in the current acquisition cycle.

5. A system for dynamically monitoring the junction temperature of a crimped device, comprising: include: Water-cooled radiator, status monitoring module, temperature monitoring module, and junction temperature calculation unit; The water-cooled heat sink is in contact with the crimped device under test, and the water-cooled heat sink is used to dissipate heat from the crimped device under test; the water-cooled heat sink includes a temperature reference point for measuring the temperature of the crimped device under test, and the temperature reference point is located on the contact surface of the water-cooled heat sink corresponding to the crimped device under test. The status monitoring module is used to acquire the voltage and current information of the tested crimping device during the current acquisition cycle; The temperature monitoring module is used to obtain the temperature of the temperature measurement reference point within the current acquisition cycle; The junction temperature calculation unit is configured to decouple the voltage information and the current information of the measured crimping device in a current collection period and the temperature of the temperature measurement reference point input into a preset equivalent thermal resistance model to obtain the junction temperature of the measured crimping device in the current collection period.

6. The crimped device junction temperature dynamic monitoring system of claim 5, wherein, The water-cooled heat sink comprises a first heat sink and a second heat sink, and the measured crimping device is arranged between the first heat sink and the second heat sink. Each heat sink comprises a water-cooled heat sink water inlet, a water-cooled heat sink water outlet and a water-cooled heat sink water channel. The water-cooled heat sink water inlet is connected to the water-cooled heat sink water outlet through the water-cooled heat sink water channel. The side of the water-cooled heat sink water channel close to the measured crimping device is provided with a contact layer, and the contact layer is slotted and provided with the temperature measurement reference point.

7. The crimped device junction temperature dynamic monitoring system of claim 5, wherein, The temperature monitoring module comprises a temperature measurement optical fiber sensing head, a temperature measurement optical fiber and an optical fiber temperature transmitter. The temperature measurement optical fiber sensing head is connected to the optical fiber temperature transmitter through the temperature measurement optical fiber.

8. The crimped device junction temperature dynamic monitoring system of claim 5, wherein, The junction temperature calculation unit comprises a device loss calculation module and a junction temperature calculation module. The device loss calculation module is configured to determine the conduction loss and the switching loss of the measured crimping device in the current collection period according to the voltage information and the current information of the measured crimping device in the current collection period, and determine the total loss of the measured crimping device in the current collection period according to the conduction loss and the switching loss, and send the total loss to the junction temperature calculation module. The junction temperature calculation module is configured to decouple the total loss and the temperature of the temperature measurement reference point input into the preset equivalent thermal resistance model to obtain the junction temperature of the measured crimping device in the current collection period.

9. An electronic device, comprising: The electronic device comprises a memory and a processor, the memory stores a computer program, and the computer program is executed by the processor to make the processor execute the steps of the crimping device junction temperature dynamic monitoring method according to any one of claims 1-4.

10. A computer-readable storage medium having stored thereon a computer program, characterized in that, The computer program is executed to implement the steps of the crimping device junction temperature dynamic monitoring method according to any one of claims 1-4.

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