Crystalline silicon battery assembly, and recovery method and application thereof
By physically stripping perovskite/crystalline silicon tandem solar cells, the high cost and unsafe recycling problems of existing technologies are solved, enabling green, safe and efficient recycling of crystalline silicon cells, which is suitable for the reuse of crystalline silicon cells.
Patent Information
- Application Number
- CN202511691448.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-18
- Publication Date
- 2026-01-20
AI Technical Summary
In existing technologies, the recycling methods for perovskite/crystalline silicon tandem solar cells are costly, unsafe, and environmentally unfriendly. Chemical solvents are prone to saturation after dissolving the substances, leading to increased economic costs and safety hazards.
Using a physical method, the hole transport layer between the tunneling layer and the perovskite light-absorbing layer of the perovskite/crystalline silicon tandem solar cell is cracked by cooling and heating. The perovskite light-absorbing layer is then peeled off to obtain a tunneling composite layer and a perovskite light-absorbing composite layer. After cleaning and drying, a crystalline silicon solar cell module is obtained.
It achieves green, safe, economical and efficient recycling of crystalline silicon solar cells, obtaining a complete bottom morphology of the perovskite thin film, which is suitable for the reuse of crystalline silicon solar cells.
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Figure CN121360733A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application belongs to the field of photovoltaics, and particularly relates to a crystalline silicon battery assembly, a recycling method and application thereof. BACKGROUND
[0002] Rapid research on hybrid halide perovskites has opened several avenues for the development of next-generation photovoltaic devices. With these characteristics, perovskite solar cells have achieved an authenticated photoelectric conversion efficiency (PCE) of 26.1%. Notably, perovskite / silicon tandem solar cells (PST) constructed by integrating a perovskite light-absorbing layer onto a crystalline silicon cell can take advantage of the industrial advantages of the crystalline silicon cell to provide a shortcut for market penetration of perovskite solar cells. Recently, perovskite / silicon tandem solar cells have achieved an authenticated PCE of 33.9%, but their long-term operational stability remains a problem. PST uses a wide-bandgap (WBG) perovskite light-absorbing layer in the top cell, among which hybrid halide-cation combinations with bandgaps between 1.65 and 1.7 eV are the most widely used, as these compositions can maximize the use of the solar spectrum and minimize thermal losses, however, these compositions simultaneously have problems of poor crystallinity and weak texture, the composition has multiple grain orientations, various crystal planes are exposed in the vertical direction, poor crystalline quality leads to more ion migration channels, and various ports of different crystal planes even after passivation will accelerate the degradation of the crystal. Therefore, under continuous light, the WBG perovskite light-absorbing layer film will undergo phase separation, thereby shortening the lifetime of the device. In addition, during the preparation of perovskite / silicon tandem solar cells, some uncontrollable factors cause the performance of the perovskite solar cell on the crystalline silicon cell to be unsatisfactory, thereby causing the performance of the entire tandem cell to decrease. In summary, the performance of the bottom cell (crystalline silicon cell) does not decrease significantly after long-term use, and the performance and stability of the tandem solar cell are greatly affected by the top cell (perovskite solar cell). Therefore, the high-cost crystalline silicon cell can be recycled.
[0003] The prior art recycles perovskite solar cells using a chemical method, and when using a chemical solvent to dissolve for recycling, the chemical solvent will be saturated after dissolving the material, and then the chemical reagent needs to be replaced, resulting in unnecessary economic costs. In addition, most of these chemical reagents are flammable and have relatively high chemical toxicity, which can cause some safety problems.
[0004] Therefore, it is urgent to develop a green, safe, economical and efficient method for recycling crystalline silicon cells. SUMMARY
[0005] To solve the problems in the prior art, the present application provides a recycling method of crystalline silicon battery assembly. The perovskite / crystalline silicon stacked solar cell placed in a liquid medium is first cooled, then heated until the hole transport layer located between the tunneling layer and the perovskite light absorbing layer cracks, obtaining a tunneling composite layer and a perovskite light absorbing composite layer, stripping the perovskite light absorbing composite layer to obtain a stripped crystalline silicon battery intermediate; the stripped crystalline silicon battery intermediate is cleaned and dried to obtain a crystalline silicon battery assembly. The present application can recycle the crystalline silicon battery assembly in a green, safe, economical and efficient manner.
[0006] Specifically, the present application provides a method for recycling crystalline silicon battery assembly, comprising the following steps:
[0007] (1) The perovskite / crystalline silicon stacked solar cell placed in a liquid medium is first cooled, then heated until the hole transport layer located between the tunneling layer and the perovskite light absorbing layer cracks, obtaining a tunneling composite layer and a perovskite light absorbing composite layer, stripping the perovskite light absorbing composite layer to obtain a stripped crystalline silicon battery intermediate; the tunneling composite layer comprises a tunneling layer, and the perovskite light absorbing composite layer comprises a perovskite light absorbing layer;
[0008] (2) The stripped crystalline silicon battery intermediate is cleaned and dried to obtain a crystalline silicon battery assembly.
[0009] In one or more embodiments, the tunneling composite layer further comprises a hole transport layer material.
[0010] In one or more embodiments, the perovskite light absorbing composite layer further comprises a hole transport layer material.
[0011] In one or more embodiments, the liquid medium is selected from one or more of ethyl acetate, anisole, ethanol, aromatic hydrocarbons, chlorobenzene, dichloromethane, chloroform, n-hexane, trifluorotrichloroethane, 2,2,3,3,3-pentafluoropropyl alcohol, polyethylene glycol, propylene glycol and ethylene glycol.
[0012] In one or more embodiments, the perovskite / crystalline silicon stacked solar cell comprises, from bottom to top, a crystalline silicon battery, a tunneling layer, a hole transport layer, a perovskite light absorbing layer, an electron transport layer and a top electrode.
[0013] In one or more embodiments, the crystalline silicon battery comprises an emitter and back passivated battery technology cell, an oxide passivated contact cell, an intrinsic thin film heterojunction cell, a cross finger back contact battery technology cell.
[0014] In one or more embodiments, the crystalline silicon battery comprises, in sequence, a bottom electrode, a transparent electrode layer, a P-type base doped layer, a first base passivation layer, a silicon substrate, a second base passivation layer and an N-type base doped layer.
[0015] In one or more embodiments, in step (1), the cooling temperature is -5-5°C.
[0016] In one or more embodiments, in step (1), the cooling time is 1-10h.
[0017] In one or more embodiments, in step (1), the heating temperature is 100-200°C.
[0018] In one or more embodiments, in step (1), the heating time is 1-30min.
[0019] In one or more embodiments, in step (1), the peeling method is blowing or adhesive tape bonding.
[0020] In one or more embodiments, in step (2), the alcohol is used for cleaning.
[0021] The present application provides a crystalline silicon battery assembly prepared by any of the methods of the present application.
[0022] The present application provides a crystalline silicon battery comprising the crystalline silicon battery assembly of the present application. BRIEF DESCRIPTION OF DRAWINGS
[0023] Figure 1 The waste perovskite / crystalline silicon tandem solar cell corresponding to some embodiments of the present application.
[0024] Figure 2 The principle diagram of recovering the crystalline silicon battery assembly for some embodiments of the present application. DETAILED DESCRIPTION
[0025] In order for those skilled in the art to understand the characteristics and effects of the present application, the following is a general description and definition of the terms and phrases mentioned in the specification and claims. Unless otherwise specified, all technical and scientific words used in the text are the usual meanings understood by those skilled in the art for the present application, and in case of conflict, the definition in the specification shall prevail.
[0026] Theories or mechanisms described and disclosed herein, whether correct or not, should not be considered limiting the scope of the present application, i.e., the present application can be practiced without any particular theory or mechanism.
[0027] In this text, "comprising", "including", "containing" and similar words cover the meaning of "consisting essentially of" and "consisting of", for example, when the text discloses "A comprises B and C", "A consists essentially of B and C" and "A consists of B and C" should be considered to have been disclosed herein.
[0028] In the present text, all features defined by a numerical range or a percentage range, such as numerical values, amounts, contents and concentrations, are only for the sake of brevity and convenience. Accordingly, the description of a numerical range or a percentage range should be considered to have encompassed and specifically disclosed all possible sub-ranges and individual numerical values within the range (including integers and fractions).
[0029] In the present text, unless specifically stated otherwise, percentages are mass percentages and ratios are mass ratios.
[0030] In the present text, when describing embodiments or examples, it is to be understood that they are not intended to limit the application to those embodiments or examples. Rather, all alternatives, modifications, and equivalents of the methods and materials described herein, which would be apparent to one of skill in the art, are included within the scope of the claims.
[0031] In the present text, for the sake of brevity, not all possible combinations of the individual technical features in the individual embodiments or examples are described. Therefore, the individual technical features in the individual embodiments or examples can be combined with each other in any way, as long as the combinations do not lead to contradictions, and all possible combinations are to be considered as being within the scope of the present description.
[0032] The present application provides a method for recycling crystalline silicon battery components, the method comprising the following steps: (1) cooling a perovskite / crystalline silicon stacked solar cell placed in a liquid medium, then heating until the hole transport layer located between the tunneling layer and the perovskite light absorbing layer is cracked, obtaining a tunneling composite layer and a perovskite light absorbing composite layer, peeling off the perovskite light absorbing composite layer to obtain a peeled crystalline silicon battery intermediate; (2) cleaning and drying the peeled crystalline silicon battery intermediate to obtain a crystalline silicon battery component.
[0033] In the present application, the tunneling composite layer can comprise the tunneling layer, and in some embodiments, the tunneling composite layer can further comprise a hole transport layer material, for example, the tunneling composite layer is the tunneling layer and the hole transport layer material on the surface of the tunneling layer. In the present application, the perovskite light absorbing composite layer can comprise the perovskite light absorbing layer, and in some embodiments, the perovskite light absorbing composite layer can further comprise a hole transport layer material, for example, the perovskite light absorbing composite layer is the perovskite light absorbing layer and the hole transport layer material on the surface of the perovskite light absorbing layer. Specifically, when the hole transport layer located between the tunneling layer and the perovskite light absorbing layer is cracked, the obtained tunneling composite layer and perovskite light absorbing composite layer comprise three cases, respectively: the tunneling composite layer is the tunneling layer, and the perovskite light absorbing composite layer is the perovskite light absorbing layer and the hole transport layer material; the tunneling composite layer is the tunneling layer and the hole transport layer material on the surface of the tunneling layer, and the perovskite light absorbing composite layer is the perovskite light absorbing layer and the hole transport layer material on the surface of the perovskite light absorbing layer; the tunneling composite layer is the tunneling layer and the hole transport layer material on the surface of the tunneling layer, and the perovskite light absorbing composite layer is the perovskite light absorbing layer.
[0034] The application uses a physical method to separate and recycle crystalline silicon cells, and realizes the peeling of the perovskite light-absorbing layer due to the too large difference in the thermal expansion coefficient between the perovskite light-absorbing layer and the tunneling composite layer. The recycling method of the application can green, safe, economic and efficient recycling of crystalline silicon cell components, and the recycled crystalline silicon cell components are lossless crystalline silicon cell components, which are conducive to the reuse of crystalline silicon cells.
[0035] In the application, the liquid medium can be one or more selected from ethyl acetate, anisole, ethanol, aromatic hydrocarbons, chlorobenzene, dichloromethane, chloroform, n-hexane, trifluorotrichloroethane, 2,2,3,3,3-pentafluoropropyl alcohol, polyethylene glycol, propylene glycol and ethylene glycol. Trifluorotrichloroethane, 2,2,3,3,3-pentafluoropropyl alcohol, polyethylene glycol, propylene glycol or ethylene glycol in the liquid medium is green, safe and economic, and the use thereof can green, safe, economic and efficient recycling of crystalline silicon cell components, and the recycled crystalline silicon cell components are lossless crystalline silicon cell components, which are conducive to the reuse of crystalline silicon cells.
[0036] In the application, the perovskite / crystalline silicon stacked solar cell can include, from bottom to top, a crystalline silicon cell, a tunneling layer, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer and a top electrode. In the application, the perovskite / crystalline silicon stacked solar cell can also include a hole blocking layer, which can be between the electron transport layer and the top electrode. In the application, the perovskite / crystalline silicon stacked solar cell can also include a buffer layer, which can be between the hole blocking layer and the top electrode. In the application, the perovskite / crystalline silicon stacked solar cell can also include an anti-reflection layer, which can be on the surface of the top electrode.
[0037] In the present application, the hole transport layer can include, but is not limited to, one or more of p-type monocrystalline silicon, p-type polycrystalline silicon, p-type amorphous silicon, and single-molecule self-assembly (SAM) material; preferably, the hole transport layer can be one or more selected from [2-(9H-carbazol-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid (MeO-2PACz), [4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid (Me-4PACz), benzoic acid, 4-[bis(2,4-dimethoxybiphenyl-4-yl)amino]-biphenyl-4-carboxylic acid [MC-43], 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Sprio-OMeTAD), polyethylene terephthalate (PTAA), a polymer of 3-hexylthiophene (P3HT), poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), Spiro-TTB, F4-TCNQ, F6TCNNQ, TAPC, NiOx, CuSCN, CuAlO2, V2O5, CdS, and CdSe. In the present application, the thickness of the hole transport layer (p-type region) can be 1 nm to 100 μm.
[0038] In the present application, the perovskite light-absorbing layer can include a perovskite structure substance, and the chemical formula of the perovskite structure substance is ABX3, A is a monovalent cation, which can include, but is not limited to, one or more of cesium ions (Cs + ), rubidium ions (Rb + ), methylamine ions (CH3NH3 + , MA + ), and formamidinium ions (CH(NH2)2 + , FA + ); B is a divalent cation, which can include, but is not limited to, one or more of lead (Pb 2 + ), copper (Cu 2+ ), zinc (Zn 2+ ), gallium (Ga 2+ ), tin (Sn 2+ ), and calcium (Ca 2+ ); X is a monovalent anion, which can include, but is not limited to, one or more of iodine (I - ), bromine (Br - ), chlorine (Cl - ), fluorine (F - ), and thiocyanate ions (SCN - ).
[0039] In the present application, the electron transport layer can include, but is not limited to, one or more of n-type monocrystalline silicon, n-type polycrystalline silicon, n-type amorphous silicon, TiO2, SnO2, ZnO, ZrO2, gallium-doped zinc oxide (GZO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), indium tin oxide (ITO), BaSnO3, TiSnOx, SnZnOx, and fullerene and derivatives (C60, C70, PCBM). In the present application, the thickness of the electron transport layer (n-type region) can be 1 nm-100 μm.
[0040] In the present application, the top electrode can include, but is not limited to, one or more of Au, Ag, Al, Cu, graphene, transparent conductive oxide (TCO), and nanocrystalline silicon. In the present application, the top electrode preparation method can include, but is not limited to, spin coating, blade coating, evaporation, printing, spraying, spray pyrolysis, or slot coating. In the present application, the thickness of the top electrode can be 100 nm-10000 nm.
[0041] In the present application, the transparent conductive oxide (TCO) can include, but is not limited to, one or more of indium tin oxide (ITO), indium zinc oxide (IZO), tungsten-doped indium oxide (IWO), fluorine-doped tin oxide (FTO), cerium-doped indium oxide (ICO), aluminum-doped zinc oxide (AZO), and barium zirconate (BZO).
[0042] In the present application, the tunneling composite layer can include, but is not limited to, one or more of indium tin oxide (ITO), indium zinc oxide (IZO), and tungsten-doped indium oxide (IWO).
[0043] In the present application, the crystalline silicon bottom cell includes, but is not limited to, PERC (emitter and back passivation cell technology) cell, TOPCon (oxide passivation contact) cell, HJT (intrinsic thin film heterojunction cell) cell, and IBC (interdigitated back contact cell technology) cell.
[0044] In the present application, the crystalline silicon cell can sequentially include a bottom electrode, a transparent electrode layer, a P-type base doped layer (a-Si(n)), a first base passivation layer (a-Si(i)), a silicon substrate (c-Si), a second base passivation layer (a-Si(i)), and an N-type base doped layer (a-Si(p)).
[0045] In the present application, cooling can be performed in any manner known in the art, and the cooling device can be a cooling device commonly used in the art, such as a refrigerator or a freezer. In step (1) of the present application, the cooling temperature can be -5-5℃, such as -5℃, -4℃, -3℃, -2℃, -1℃, 0℃, 1℃, 2℃, 3℃, 4℃, or 5℃. In step (1) of the present application, the cooling time can be 1-10 h, such as 1 h, 2 h, 3 h, 4 h, 5 h, 6 h, 7 h, 8 h, 9 h, or 10 h.
[0046] In the present application, the heating can be performed in any manner known in the art, and the heating device can be any device commonly used in the art, such as a heating table, a hot air gun, or an oven. In step (1) of the present application, the heating temperature can be 100-200°C, such as 100°C, 110°C, 120°C, 130°C, 140°C, 150°C, 160°C, 170°C, 180°C, 190°C, or 200°C. In step (1) of the present application, the heating time can be 1-30 min, such as 5 min, 10 min, 15 min, 20 min, 25 min, or 30 min.
[0047] In the present application, the peeling can be performed by blowing or by using adhesive tape. In some embodiments, the blowing is performed using an air gun, and in some embodiments, the blowing gas is N2.
[0048] In the present application, the cleaning solvent can be an alcohol, preferably isopropanol (IPA) and / or ethanol. In the present application, the cleaning can be performed ≥2 times.
[0049] In the present application, the drying can be performed in any manner known in the art, and the drying can be performed by heating or by using an air knife, and in some embodiments, the air knife drying is performed using N2. In the present application, the drying device can be any device commonly used in the art.
[0050] The present application provides a use of a recycled crystalline silicon cell in a solar cell.
[0051] Compared with the prior art, the present application has the following advantages:
[0052] (1) The recycling method of the present application is based on a physical method to achieve the purpose, and the selection of the liquid medium has no great requirement, and has universality;
[0053] (2) In the present application, if the liquid medium is a reagent that does not dissolve the stacked battery, it can be used all the time, and there is no need to replace the reagent due to saturation of dissolution, and it has good economy;
[0054] (3) The present application can select a green and environmentally friendly liquid medium that is not flammable, and has environmental protection and safety;
[0055] (4) The present application can obtain a complete perovskite thin film bottom morphology, which can be used for research;
[0056] (5) Compared with the chemical dissolution method, the present application can efficiently recycle the crystalline silicon cell.
[0057] The present application will be described below in the manner of specific examples. It should be understood that these examples are merely illustrative and are not intended to limit the scope of the present application. The methods, reagents and materials used in the examples are conventional in the art unless otherwise specified. The raw material compounds in the examples can be purchased through commercial channels.
[0058] The structure of the waste perovskite / crystalline silicon tandem solar cell used in the examples and comparative examples of the present application is shown in Figure 1 , wherein the SAM corresponding to the hole transport layer is Me-4PACZ, and the perovskite light-absorbing layer contains FA 0.8 MA 0.15 Cs 0.05 Pb(I 0.75 Br 0.25 )3.
[0059] Example 1
[0060] In this example, the crystalline silicon cell component in the waste perovskite / crystalline silicon tandem solar cell shown in Figure 1 is recycled, and the specific steps are as follows:
[0061] (1) Place the waste perovskite / crystalline silicon tandem solar cell in a container containing ethyl acetate, and then place it in a refrigerator at a temperature of -5°C for cooling for 10 min. Place the cooled perovskite / crystalline silicon tandem solar cell on a heating table at a temperature of 120°C for heating for 20 min. Heat until the hole transport layer located between the tunneling layer and the perovskite light-absorbing layer is cracked, to obtain a tunneling composite layer and a perovskite light-absorbing composite layer (the tunneling composite layer is the tunneling layer and the hole transport layer material on the surface of the tunneling layer, and the perovskite light-absorbing composite layer is the perovskite light-absorbing layer and the hole transport layer material on the surface of the perovskite light-absorbing layer); use N2 to strip the perovskite light-absorbing composite layer to obtain a stripped crystalline silicon cell intermediate;
[0062] (2) Place the stripped crystalline silicon cell intermediate in ethanol and wash twice to dissolve away the residual ethyl acetate and the hole transport layer material on the surface of the tunneling layer, and then dry with N2 to obtain a crystalline silicon cell component (HJT) with the structure of ITO / a-Si(n) / a-Si(i) / c-Si / a-Si(i) / a-Si(p) / ITO / Ag;
[0063] (3) Print Ag with a thickness of 2 μm on the ITO surface of the crystalline silicon cell component to obtain a crystalline silicon cell.
[0064] Example 2
[0065] The difference between this example and Example 1 is that in this example, the ethyl acetate in Example 1 is replaced by anisole.
[0066] Example 3
[0067] The difference between this example and Example 1 is that in this example, the ethyl acetate in Example 1 is replaced by ethanol.
[0068] Comparative Example 1
[0069] This comparative example recovers the crystalline silicon cell in the waste perovskite / crystalline silicon tandem solar cell according to the chemical reagent dissolution method. Figure 1 The crystalline silicon cell in the waste perovskite / crystalline silicon tandem solar cell is as shown in the following specific steps:
[0070] (1) The waste perovskite / crystalline silicon tandem solar cell is placed in a container containing N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (the volume ratio of DMF to DMSO is 4:1), and then ultrasonic treatment is performed for 30 min to remove the perovskite light-absorbing layer, the electron transport layer, the hole blocking layer, the buffer layer and the top electrode, thereby obtaining an intermediate;
[0071] (2) The intermediate is placed in a solvent containing isopropyl alcohol and ultrasonic treatment is performed for 10 min to remove the hole transport layer, and then N2 is used for drying, thereby obtaining a crystalline silicon cell intermediate;
[0072] (3) Ag with a thickness of 2 μm is printed on the ITO surface of the crystalline silicon cell intermediate, thereby obtaining a crystalline silicon cell.
[0073] Test Example
[0074] Device performance test of the crystalline silicon cell: under the AM 1.5G standard solar spectrum, a solar simulator is used, the voltage range is set to be from -0.3-0.8V, the current output of the crystalline silicon cell recovered in Example 1-3 and Comparative Example 1 under different voltages is tested, and the corresponding current-voltage (I-V) characteristic curve is drawn, wherein the cell surface area is 1.1664 cm 2 , and the incident light power (Pin) is 100 mW / cm 2 . According to the characteristic curve, the open-circuit voltage, the short-circuit current density, the fill factor and the photoelectric conversion efficiency of the crystalline silicon cell recovered in Example 1-3 and Comparative Example 1 are obtained.
[0075] (1) Open-circuit voltage (Voc): the voltage value corresponding to the current equal to zero.
[0076] (2) Short-circuit current density (Jsc): the current value when the voltage is zero is the short-circuit current (Isc), and the current size on the unit cell surface area is the short-circuit current density.
[0077] (3) Fill factor (FF): the ratio of the maximum output power (Pmax) of the cell to the product of the open-circuit voltage and the short-circuit current, the calculation formula is (Pmax / Voc*Isc), wherein the maximum power point is the point at which the output power of the cell reaches the maximum value.
[0078] (4) Photoelectric conversion efficiency (PCE): The photoelectric conversion efficiency refers to the ratio of the maximum output power to the incident light power (Pin), and the calculation formula is (Pmax / Pin)*100%.
[0079] The test results of open-circuit voltage, short-circuit current density, fill factor and photoelectric conversion efficiency of the recycled crystalline silicon cells of Examples 1-3 and Comparative Example 1 are shown in Table 1.
[0080] Table 1: Open-circuit voltage, short-circuit current density, fill factor and photoelectric conversion efficiency of the recycled crystalline silicon cells of Examples 1-3 and Comparative Example 1
[0081]
[0082] As can be seen from Table 1, the recycled crystalline silicon cell of Example 1 has the optimal photovoltaic performance parameters, and the photovoltaic performance difference between Example 2 and Example 3 compared with Example 1 is not very obvious. Among them, Example 3 is slightly worse than Example 1 and Example 2, which may be due to the fact that ethanol has a certain solubility for the perovskite light-absorbing layer, causing a part of the perovskite to adhere to the crystalline silicon bottom cell, thereby affecting the performance of the silicon cell. The mixed solvent of DMF and DMSO used in Comparative Example 1 can completely dissolve the perovskite light-absorbing layer, thereby causing excessive PbI2 to adhere to the crystalline silicon bottom cell, resulting in a substantial decrease in the performance of the crystalline silicon cell.
Claims
1. A method of recycling a crystalline silicon cell assembly, characterized by, The method comprises the following steps: (1) cooling a perovskite / silicon tandem solar cell placed in a liquid medium, then heating until the hole transport layer located between the tunneling layer and the perovskite light-absorbing layer is cracked, obtaining a tunneling composite layer and a perovskite light-absorbing composite layer, peeling off the perovskite light-absorbing composite layer to obtain a peeled-off silicon cell intermediate; the tunneling composite layer comprises a tunneling layer, and the perovskite light-absorbing composite layer comprises a perovskite light-absorbing layer; (2) cleaning and drying the peeled-off silicon cell intermediate to obtain a silicon cell assembly.
2. The method of claim 1, wherein the tunneling composite layer further comprises a hole transport layer material; and / or the perovskite light-absorbing composite layer further comprises a hole transport layer material. The liquid medium is selected from one or more of ethyl acetate, anisole, ethanol, aromatic hydrocarbons, chlorobenzene, dichloromethane, chloroform, n-hexane, dimethylformamide antisolvent, trifluorotrichloroethane, 2,2,3,3,3-pentafluoropropanol, polyethylene glycol, propylene glycol, and ethylene glycol. The perovskite / silicon tandem solar cell comprises, from bottom to top, a silicon cell, a tunneling layer, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and a top electrode.
3. The method of claim 1, wherein, The silicon cell comprises an emitter and back passivation cell technology cell, an oxide passivation contact cell, an intrinsic thin film heterojunction cell, and a cross-finger back contact cell technology cell.
4. The method of claim 1, wherein, The silicon cell comprises, in sequence, a bottom electrode, a transparent electrode layer, a P-type base doped layer, a first base passivation layer, a silicon substrate, a second base passivation layer, and an N-type base doped layer.
5. The method of claim 4, wherein, The method has one or more of the following characteristics:
6. The method of claim 4, wherein, In step (1), the cooling temperature is -5-5℃; 7. The method of claim 1, wherein, In step (1), the cooling time is 1-10h; In step (1), the heating temperature is 100-200℃; In step (1), the heating time is 1-30min; In step (1), the peeling method is blowing or adhesive bonding. In step (2), an alcohol is used for cleaning.
9. A silicon cell assembly prepared by the method of any one of claims 1-8.
8. The method of claim 1, wherein, 10. A silicon cell comprising the silicon cell assembly of claim 9.