Adjustable magnetron sputtering ring device

Abstract

The invention relates to the technical field of magnetron sputtering, in particular to an adjustable magnetron sputtering ring device. The invention relates to a vacuum magnet which comprises a base and a sealing cover hermetically mounted at the top of the base, a vacuum environment is formed between the base and an inner cavity of the sealing cover, and the vacuum magnet is characterized in that a magnet cavity is arranged at the top of the base, and a central magnetic area and an extension magnetic area are formed in the magnet cavity. According to the invention, the hydraulic push rod drives the outer ring target material to lift and is fixed with the subareas of the connecting assembly, when only the central target material is used, the outer ring target material can be moved out of the magnetic field and electric field range of the central area, and invalid sputtering caused by the edge effect is reduced from the source, so that the central and outer ring target materials can work independently or cooperatively as required; the loss of the target material in a non-working area is further reduced, the accurate utilization rate of target material resources is improved, unnecessary consumption of the outer ring target material is avoided, and the overall service life of the target material is prolonged.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of magnetron sputtering, in particular to an adjustable magnetron sputtering ring device. BACKGROUND

[0002] The adjustable magnetron sputtering ring device generates a basic magnetic field by arranging magnet units (such as alternating N / S poles) according to a specific rule, and uses an adjusting mechanism to adjust the magnetic field distribution in real time, so as to realize precise control of plasma density, sputtering rate and film uniformity.

[0003] In the working process of the adjustable magnetron sputtering ring device, the sputtering surface of the target material is directly opposite to the deposition surface of the substrate. At the same time, a small deposition surface of the substrate needs to be used with a small sputtering surface of the target material to prevent waste caused by a too large target material. A large deposition surface of the substrate needs to be used with a large sputtering surface of the target material, and the "large target material" can emit more ions to improve the film coating efficiency. The areas of the two are balanced with each other. Therefore, the existing device is mostly based on the use of the same size of target material and substrate at the same time. Part of the different sizes of target materials and substrates usually control the power start of the target material by partition, and the target material area is powered according to the size of the substrate. On the one hand, although the outer ring area of the target material is not powered, it is easy to produce a small amount of plasma due to the influence of the edge effect of the central area electric field, and then the outer ring target material surface is bombarded to produce a small amount of sputtering atoms, causing waste of the outer ring target material. On the other hand, long-term use of a certain area of the target material will cause the target material in this area to be not flush with the target material in other areas, thereby affecting the sputtering direction and sputtering efficiency of each area of the target material, and further causing the uniformity of the film generated by sputtering to decrease. In view of this, we propose an adjustable magnetron sputtering ring device. SUMMARY

[0004] The purpose of the present application is to provide an adjustable magnetron sputtering ring device to solve the problem of uneven film coating caused by the influence of the edge effect of the central area electric field on the production of a small amount of plasma, and the different loss efficiencies of the surface areas of the target material when the power start of the target material is controlled by partition in the background art.

[0005] In order to achieve the above object, the application provides a tunable magnetron sputtering ring device, which comprises a base and a sealing cover sealingly installed on the top of the base, a vacuum environment is formed between the base and the inner cavity of the sealing cover, a magnet cavity is arranged on the top of the base, a central magnetic area and an extended magnetic area are formed in the magnet cavity, a central target and an outer ring target are arranged on the top of the magnet cavity, the size of the central target corresponds to the central magnetic area and is located directly above the central magnetic area, the size of the outer ring target corresponds to the extended magnetic area and is located directly above the extended magnetic area, a hydraulic push rod is embedded in the bottom of the inner cavity of the base, and the piston rod of the hydraulic push rod drives the outer ring target to move up and down, wherein the sputtering film size of the outer ring target in the extended magnetic area range is greater than the sputtering film size of the outer ring target when the outer ring target moves up and leaves the extended magnetic area range.

[0006] Further, a central magnet and an inner ring magnet are installed in the central magnetic area, the central magnet is located at the center of the magnet cavity, the inner ring magnet is arranged in a ring shape around the central magnet, the magnetic poles of the inner ring magnet and the central magnet located above are arranged opposite to each other, and an outer ring magnet is installed in the extended magnetic area and arranged uniformly around the inner ring magnet.

[0007] Further, a connecting assembly for directly fixing the central target and the outer ring target is installed on the top of the magnet cavity, the connecting assembly comprises an outer ring back plate and a central back plate, wherein the central back plate is used for fixing and installing the central target at the center of the top of the magnet cavity, so that the central magnet and the inner ring magnet jointly act on the central target, the outer ring back plate is used for installing and fixing the outer ring target, and the bottom of the outer ring back plate is connected with the elongated ends of a plurality of hydraulic push rods, so that the outer ring back plate moves horizontally upward or downward, and a plurality of outer ring magnets jointly acting on the outer ring target are uniformly arranged in the magnet cavity and cover the area of the outer ring back plate.

[0008] Further, a flow channel for cooling liquid is arranged in the magnet cavity and is arranged to flow through the plurality of magnets and the plurality of hydraulic push rods, and does not directly contact the plurality of magnets and the plurality of hydraulic push rods.

[0009] Further, a substrate holder is installed on the inner top wall of the sealing cover, and the substrate holder is used for installing and fixing a large substrate or a small substrate.

[0010] Further, the hydraulic push rod is made of a non-magnetic material.

[0011] Further, the outer ring back plate and the central back plate are made of a material with strong electrical conductivity.

[0012] Further, the outer ring back plate and the central back plate are respectively non-wholly attached to the bottom of the outer ring target and the central target.

[0013] Further, the outer ring back plate is provided with a through slot for the power cable to pass through, so that the outer ring back plate and the wiring terminal on the center back plate are electrically connected with the external power supply.

[0014] Further, a sealing gasket is installed at the connection between the sealing cover and the base to help form a vacuum environment inside the sealing cover.

[0015] Compared with the prior art, the present application has the following advantages: 1. In the adjustable magnetic control sputtering ring device, the outer ring target material is driven to rise and fall by the hydraulic push rod, and is fixed in the partition of the connecting assembly. When only the center target material is used, the outer ring target material can be moved to the outside of the center area magnetic field and electric field range, thereby reducing the invalid sputtering caused by the edge effect from the source, and the center and outer ring target materials can work alone or cooperatively as needed, further reducing the loss of non-working area target material, improving the precise utilization rate of target material resources, avoiding unnecessary consumption of the outer ring target material, and prolonging the overall service life of the target material.

[0016] 2. In the adjustable magnetic control sputtering ring device, through the cooperation of the horizontal sensor and the flush adjustment of the hydraulic push rod, the problem of uneven surface of the target material caused by long-term use of a single area target material can be detected and adjusted in real time to ensure that the top surfaces of the center and outer ring target materials are always flush, avoiding problems such as sputtering direction deviation and uneven ion distribution caused by height difference of the target material, and ensuring the stability of the sputtering process. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 is a structural schematic diagram of the present application; Figure 2 is an exploded view of part of the components in the present application; Figure 3 is a schematic diagram of the connecting assembly and the target material in the present application; Figure 4 is a sectional view of the large substrate coating process (magnet side) in the present application; Figure 5 is a sectional view of the small substrate coating process (magnet side) in the present application; Figure 6 is a sectional view of the large substrate coating process (hydraulic push rod side) in the present application; Figure 7 is a sectional view of the small substrate coating process (hydraulic push rod side) in the present application.

[0018] The meanings of the various reference numbers in the figures are as follows: 1. base; 2. sealing cover; 21. substrate holder; 22. large substrate; 23. small substrate; 3. magnet cavity; 31. center magnet; 32. inner ring magnet; 33. outer ring magnet; 34. hydraulic push rod; 4. connecting assembly; 41. outer ring back plate; 42. wiring terminal; 43. center back plate; 5. outer ring target material; 6. center target material. DETAILED DESCRIPTION

[0019] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all the other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0020] Embodiment 1 Please refer to Figures 1-7 The embodiment provides an adjustable magnetron sputtering ring device, which comprises a base 1, a sealing cover 2 sealingly installed on the top of the base 1, a vacuum environment formed between the base 1 and the inner cavity of the sealing cover 2, a magnet cavity 3 installed on the top of the base 1, a center magnet 31 installed in the middle of the magnet cavity 3, a plurality of groups of inner ring magnets 32 uniformly installed around the center magnet 31 in the magnet cavity 3, the magnetic poles of the inner ring magnets 32 and the center magnet 31 located above each other being oppositely arranged, so that the magnetic induction lines between the inner ring magnets 32 and the center magnet 31 are guided from the N pole to the S pole, thereby forming a magnetic field; the center target material 6 and the outer ring target material 5 are both fixed on the top of the magnet cavity 3 through bolts, the center target material 6 is located at the center of the outer ring target material 5, the center target material 6 and the outer ring target material 5 are both provided with a wiring end 42, the center target material 6 and the outer ring target material 5 are respectively powered through the independent wiring end 42, and the magnetic induction lines between the inner ring magnets 32 and the center magnet 31 are arranged to completely cover the target materials; at the same time, the magnet cavity 3 is further provided with a flow channel for cooling liquid to pass through, which is used for heat exchange during the sputtering process of the center target material 6 and the outer ring target material 5, so as to prevent the center target material 6 and the outer ring target material 5 from deforming; an anode connecting column is connected to the top end of the sealing cover 2, which is used to form a complete circuit together with the center target material 6 and the outer ring target material 5, a substrate holder 21 is installed on the inner top wall of the sealing cover 2, which is used to fix a large substrate 22 or a small substrate 23, so that ions can be uniformly laid on the large substrate 22 or the small substrate 23 during the sputtering process.

[0021] Therefore, after fixing the central target 6 and the outer ring target 5 to the base 1 with bolts, the large substrate 22 or the small substrate 23 is also fixed to the substrate holder 21 with bolts. Then, the sealing cover 2 is fitted and fixed to the top of the base 1. Through the air outlet on the sealing cover 2 and an externally installed mechanical pump, the air inside the sealing cover 2 is extracted, creating a vacuum environment between the inside of the sealing cover 2 and the top of the base. Then, argon gas is injected into the sealing cover 2 through the air inlet (argon gas is used because it is an inert gas and will not chemically react with the central target 6, the outer ring target 5, or the large substrate 22 and the small substrate 23). (Can be ionized to generate plasma); then, depending on the large substrate 22 or small substrate 23 used, the external power supply of the corresponding area is activated, and the central target 6 and the outer ring target 5 of the area are connected to a negative high voltage, and the top of the sealing cover 2 is connected to the positive electrode (grounded), so that an electric field is formed between the central target 6 and the outer ring target 5 and the sealing cover 2. At this time, the central target 6 and the outer ring target 5 act as cathodes, and the sealing cover 2 acts as anode. The direction of the electric field is from the sealing cover 2 to the central target 6 and the outer ring target 5. The magnet cavity 3 maintains a fixed layout (the central and outer periphery are alternately set with magnetic poles, i.e., NS), and a closed magnetic field is formed on the surface of the central target 6 and the outer ring target 5. However, even when the central target 6 and the outer ring target 5 are stacked together, the outer ring target 5, though not energized, will still generate trace amounts of plasma due to the edge effect of the electric field in the central region. This plasma will then bombard the surface of the outer ring target 5, producing trace amounts of sputtered atoms, resulting in a waste of the outer ring target 5. Furthermore, prolonged use of either the central target 6 or the outer ring target 5 will cause the surfaces of the two targets to become uneven, leading to different distances between the central target 6 or the outer ring target 5 and the large substrate 22 or small substrate 23 used for sputtering. This affects the sputtering efficiency. Therefore, a central magnetic region and an extended magnetic region are formed inside the magnet cavity 3, wherein: according to Figure 4 As shown, a central magnet 31 and an inner ring magnet 32 ​​are installed in the central magnetic region. The central magnet 31 is located at the center of the magnet cavity 3. The inner ring magnet 32 ​​is arranged to be uniformly installed in a ring around the central magnet 31. The magnetic poles of the inner ring magnet 32 ​​and the central magnet 31 are opposite to each other at the top. An outer ring magnet 33 is installed in the extended magnetic region. The outer ring magnet 33 is uniformly arranged around the inner ring magnet 32. The outer ring magnet 33 includes a set of single magnets with the N pole facing upward and a set of single magnets with the S pole facing upward. The magnetic poles of the set of single magnets close to the inner ring magnet 32 ​​are opposite to those of the inner ring magnet 32 ​​at the top. The magnet cavity 3 top is provided with a center target 6 and an outer ring target 5, the size area of the center target 6 corresponds to the center magnetic area, and is located directly above the center magnetic area, and the size area of the outer ring target 5 corresponds to the extended magnetic area, and is located directly above the extended magnetic area; the inner cavity bottom of the base 1 is embedded with a hydraulic push rod 34, and the piston rod of the hydraulic push rod 34 drives the outer ring target 5 to move up and down, wherein: the sputtering film size of the outer ring target 5 in the extended magnetic area range is greater than the sputtering film size of the outer ring target 5 moving up out of the extended magnetic area range; The magnet cavity 3 top is provided with a center target 6 and an outer ring target 5, the size area of the center target 6 corresponds to the center magnetic area, and is located directly above the center magnetic area, and the size area of the outer ring target 5 corresponds to the extended magnetic area, and is located directly above the extended magnetic area; the inner cavity bottom of the base 1 is embedded with a hydraulic push rod 34, and the piston rod of the hydraulic push rod 34 drives the outer ring target 5 to move up and down, wherein: the sputtering film size of the outer ring target 5 in the extended magnetic area range is greater than the sputtering film size of the outer ring target 5 moving up out of the extended magnetic area range; The outer ring back plate 41 includes an outer ring shell and an inner ring shell, and a plurality of support rods are uniformly arranged between the outer ring shell and the inner ring shell, the outer ring target 5 is fixed on the installation support rod through bolts, and is located between the outer ring shell and the inner ring shell, and a plurality of hydraulic push rods 34 are embedded on the top of the magnet cavity 3, the extension end of the plurality of hydraulic push rods 34 is connected with the bottom of the support rod of the outer ring back plate 41, and is used as the power source for the horizontal upward or downward movement of the outer ring back plate 41; It is worth noting that the hydraulic push rod 34 is made of non-magnetic material, mainly aluminum alloy or engineering plastic, so as to avoid interference with the magnetic field; in addition, the outer ring magnet 33 and the inner ring magnet 32 are isolated from each other by a non-magnetic piece, the non-magnetic isolation piece is made of austenitic stainless steel or ceramic material, and has a ring plate structure, the inner diameter of the ring plate structure matches the outer diameter of the inner ring magnet 32, and the outer diameter of the ring plate structure matches the inner diameter of the outer ring magnet 33, so as to avoid mutual interference of the magnetic field, so that the outer ring magnet 33 only acts on the outer ring target 5, and when the outer ring target 5 does not conduct sputtering, the outer ring magnet 33 will not interfere with the magnetic field of the center magnet 31 and the inner ring magnet 32; Meanwhile, a horizontal sensor is also installed on the outer ring back plate 41, which is used to detect the flatness of the top surface of the outer ring target 5 and the center target 6 during the upward and downward movement of the outer ring target 5, and is set to keep the top surface of the outer ring target 5 and the center target 6 flat by cooperating with the hydraulic push rod 34.

[0022] And, on the basis of the above, first through the center back plate 43 will be fixed in the center of the magnet cavity 3 top center target material 6, and then the outer ring target material 5 is fixed by bolt in the outer ring back plate 41; then according to the choice of large substrate 22 or small substrate 23, choose to center back plate 43 alone or simultaneously to center back plate 43 and outer ring back plate 41 power supply, thus, in the small substrate 23 sputter coating, only the center target material 6 work, can be driven by hydraulic push rod 34 outer ring back plate 41 with outer ring target material 5 horizontal up, away from the center area magnetic field and electric field range, due to the isolation design of outer ring magnet 33 and inner ring magnet 32, avoid the outer ring magnet 33 on the center area magnetic field interference, reduce the influence of the edge effect of the center area electric field on the outer ring target material 5; in addition, for large substrate 22 sputter coating, the horizontal sensor sends a signal, through the hydraulic push rod 34 to drive the outer ring back plate 41, so that the outer ring target material 5 is moved to the upper surface of the center target material 6 upper surface flush position; After the above preparation work, start to seal cover 2 extraction of air, injection of argon, and start the corresponding power supply to form an electric field, ionization of argon plasma, argon ion bombardment power supply area outer ring target material 5 or center target material 6 surface, outer ring target material 5 or center target material 6 atom sputtering to large substrate 22 or small substrate 23 to form a thin film.

[0023] On the one hand, only the center back plate 43 power supply, so that the center target material 6 sputtering activity, the outer ring target material 5 through the hydraulic push rod 34 up, the center target material 6 surface trace sputtering phenomenon, the influence of the outer ring target material 5 surface is basically eliminated, through the actual operation verification, the invalid loss rate of the outer ring target material 5 can be reduced by more than 80%, the overall service life of the outer ring target material 5 and the center target material 6 is prolonged by 30%-50% than the prior art; in the partition mode, the non working area target material has almost no additional loss, avoiding the waste of resources and reducing the material cost of the coating process; On the other hand, through the horizontal sensor detection, hydraulic drag rod adjustment, when the center target material 6 is used for a long time, the horizontal height of the center target material 6 is reduced, so that the upper surface of the center target material 6 is slightly lower than the outer ring target material 5. At this time, the outer ring target material 5 is indirectly driven by the hydraulic drag rod to move horizontally downward, so that the upper surface of the outer ring target material 5 is kept flush with the center target material 6, which can avoid the problems of sputtering direction deviation and uneven ion distribution caused by the difference in height of the target material, and ensure the stability of the sputtering process.

[0024] According to Figure 4 And Figure 5As shown, in addition to the above, the outer ring magnet 33 comprises a group of N-pole upward single magnets and a group of S-pole upward single magnets, and the group of single magnets close to the inner ring magnet 32 is opposite to the upward magnetic pole of the inner ring magnet 32, and the N-pole upward single magnet of the center magnet 31 is adopted in the application, the S-pole upward single magnet of the inner ring magnet 32, the N-pole upward single magnet of the outer ring magnet 33 is close to the inner ring magnet 32, the N-pole upward single magnet is far away from the inner ring magnet 32, and the N / S pole is arranged alternately to form a complete magnetic field between each other; It is worth noting that the double single magnet alternating layout of the outer ring magnet 33 not only strengthens the magnetic field isolation, but also enables the magnetic field edges of the center target 6 and the outer ring target 5 to seamlessly connect when they work together, forming a uniform magnetic field belt covering the entire target surface, and ensuring that the sputtering atom density of the edge region of the large substrate 22 or the small substrate 23 is consistent with that of the center region.

[0025] As shown in the figure, Figure 6 As shown in the figure, Figure 7 As shown, the inner top wall of the sealing cover 2 is provided with a substrate holder 21, and the fixing seat on the substrate holder 21 can fix the large substrate 22 or the small substrate 23, which is directly fixed on the fixing seat by bolts, and after sputtering and coating, the next group of substrates to be coated can be replaced; As shown in the figure, Figures 6-7 As shown in the figure, the magnet cavity 3 in the application is provided with a flow channel for the cooling liquid to pass through, and is arranged to flow through the flow channel between the plurality of magnets and the plurality of hydraulic push rods 34, and does not directly contact the plurality of magnets and the plurality of hydraulic push rods 34. The cooling liquid directly contacts the upper surface of the magnet cavity 3 and indirectly contacts the target. When the cooling liquid circulates through the flow channel, it first exchanges heat with the upper surface of the magnet cavity 3, and then indirectly conducts to the bottom of the target through the upper surface of the magnet cavity 3, so as to realize heat exchange and prevent the target from deforming due to high temperature in the sputtering process, resulting in deviation of the target sputtering angle; At the same time, the outer ring back plate 41 and the center back plate 43 are respectively arranged in non-full contact with the bottom of the outer ring target 5 and the center target 6, so as to increase the area of the center target 6 and the outer ring target 5 which can indirectly contact the upper surface of the magnet cavity 3 through air, and can more effectively help the target to dissipate heat; And the inner wall of the outer ring target 5 and the outer wall of the center target 6 are close to the top region and are arranged in close contact, so as to ensure that the large substrate 22 is more complete and uniform.

[0026] The outer ring back plate 41 and the center back plate 43 are made of a material with high conductivity, so that on the one hand, the energy loss (loss rate is less than or equal to 3%) in the current transmission process can be reduced, the target material can obtain stable and sufficient negative high voltage power supply, and the instability of the plasma density caused by voltage fluctuation can be avoided; on the other hand, the heat conduction performance of the high-conductivity material is excellent, which can reduce the contact between the outer ring target 5 and the outer ring back plate 41, and also can fully conduct electricity, so that the external power supply is transmitted to the bottom surface of the external target through the wiring end 42.

[0027] In summary, the overall workflow of the present application is as follows: first, the center target 6 and the outer ring target 5 are assembled on the center back plate 43 and the outer ring back plate 41 respectively through bolts, and the center target 6 is fixed on the top center of the magnet cavity 3 through the center back plate 43, and the outer ring target 5 is fixed on the support rod of the outer ring back plate 41, according to the film coating requirement, a large substrate 22 or a small substrate 23 with a corresponding size is selected and fixed on the substrate holder 21 fixed seat of the inner top wall of the sealing cover 2, so that the deposition surface of the large substrate 22 or the small substrate 23 faces downward, then the sealing cover 2 is sleeved and fixed on the top of the base 1, and the external mechanical pump is connected through the gas outlet of the sealing cover 2, so that the internal air is pumped out to form a vacuum environment; then, argon gas is injected into the sealing cover 2 through the gas inlet, so as to replace the gas in the vacuum cavity and provide an inert environment for plasma generation; Then, the working target area is determined according to the size of the substrate, when the small substrate 23 is coated, only the external power supply corresponding to the center target 6 is started, the outer ring target 5 remains in a power-off state, the hydraulic push rod 34 at the top of the magnet cavity 3 is started, the outer ring back plate 41 and the outer ring target 5 are driven to move horizontally upward, until the outer ring target 5 completely leaves the magnetic field and electric field range of the center area, so as to avoid invalid sputtering caused by edge effect; when the large substrate 22 is coated, the external power supply of the center target 6 and the outer ring target 5 is started at the same time, so as to ensure that the two groups of target materials independently obtain stable negative high voltage, and the height of the outer ring target 5 is adjusted by the hydraulic push rod 34, so as to preliminarily make the outer ring target 5 roughly flush with the top surface of the center target 6. Under the action of electric field, the electron impacts argon molecule to ionize argon ion and free electron, the free electron is accelerated by electric field and continuously impacts more argon molecules to initiate avalanche ionization, gradually forming a plasma region uniformly covering the surface of the working target material, the positively charged argon ion is accelerated to the negatively charged target material surface under the action of electric field force, and the kinetic energy is transmitted to the target material atom to make the target material atom overcome the surface binding energy and be deposited; the deposited target material atom moves along a straight line, transmits to the deposition surface of the upper large substrate 22 or small substrate 23 through the plasma region, and gradually forms a uniform thin film through physical adsorption, diffusion and condensation process, after the thin film deposition reaches the preset thickness, the external power supply corresponding to the target material is first turned off to stop the plasma generation and sputtering process, air is slowly introduced through the air inlet of the sealing cover 2, the air pressure inside and outside the cavity is balanced, the sealing cover 2 is disassembled, the coated substrate is taken off from the substrate holder 21, and a coating operation is completed, then the substrate is replaced to continue the next coating operation.

[0028] The basic principle, main features and advantages of the present application are shown and described above. It should be understood by those skilled in the art that the present application is not limited by the above embodiments, the above embodiments and descriptions in the specification are only preferred examples of the present application, and are not intended to limit the present application, various changes and improvements can be made to the present application without departing from the spirit and scope of the present application, and these changes and improvements all fall within the scope of the present application. The scope of protection of the present application is defined by the appended claims and their equivalents.

Claims

1. A tunable magnetron sputtering ring device, comprising a base (1) and a sealed cover (2) mounted on top of the base (1), a vacuum environment being formed between the base (1) and the inner cavity of the sealed cover (2), characterized in that: The base (1) top is provided with a magnet cavity (3), the magnet cavity (3) is formed with a central magnetic area and an extended magnetic area inside; The magnet cavity (3) top is further provided with a central target material (6) and an outer ring target material (5), the central target material (6) size area corresponds to the central magnetic area, and is located directly above the central magnetic area, the outer ring target material (5) size area corresponds to the extended magnetic area, and is located directly above the extended magnetic area; The base (1) inner cavity bottom is embedded with a hydraulic push rod (34), the hydraulic push rod (34) piston rod drives the outer ring target material (5) to move up and down, wherein: The sputtering film size of the outer ring target material (5) in the extended magnetic area range is greater than the sputtering film size of the outer ring target material (5) moving up and out of the extended magnetic area range.

2. The tunable magnetron sputtering ring apparatus of claim 1, wherein: The central magnetic area is installed with a central magnet (31) and an inner ring magnet (32), the central magnet (31) is located at the center of the magnet cavity (3), the inner ring magnet (32) is arranged to surround the central magnet (31) annularly and uniformly, and the magnetic poles of the inner ring magnet (32) and the central magnet (31) located above are arranged oppositely. The extended magnetic area is installed with an outer ring magnet (33), and the outer ring magnet (33) is uniformly arranged around the inner ring magnet (32), the outer ring magnet (33) includes a group of single magnets with N-pole upward and a group of single magnets with S-pole upward, and the magnetic poles of the group of single magnets close to the inner ring magnet (32) above are arranged oppositely.

3. The tunable magnetron sputtering ring apparatus of claim 1, wherein: The magnet cavity (3) top is installed with a connecting assembly (4) for directly fixing the central target material (6) and the outer ring target material (5), the connecting assembly (4) includes an outer ring back plate (41) and a central back plate (43), wherein: The central back plate (43) is used for fixing and installing the central target material (6) at the center of the magnet cavity (3) top, so that the central magnet (31) and the inner ring magnet (32) jointly act on the central target material (6); The outer ring back plate (41) is used for installing and fixing the outer ring target material (5), and is arranged such that the bottom of the outer ring back plate (41) is connected with the elongated ends of a plurality of groups of hydraulic push rods (34), so that the outer ring back plate (41) moves horizontally upward or downward; a plurality of groups of outer ring magnets (33) jointly acting on the outer ring target material (5) are uniformly arranged in the magnet cavity (3) corresponding to the covered area of the outer ring back plate (41).

4. The tunable magnetron sputtering ring apparatus of claim 1, wherein: The magnet cavity (3) is internally provided with a flow channel for cooling liquid to pass through, and is arranged such that the flow channel flows from between the plurality of groups of magnets and the plurality of groups of hydraulic push rods (34) without directly contacting the plurality of groups of magnets and the plurality of groups of hydraulic push rods (34).

5. The tunable magnetron sputtering ring apparatus of claim 1, wherein: The inner top wall of the sealing cover (2) is installed with a substrate holder (21), and the substrate holder (21) is used for installing and fixing a large substrate (22) or a small substrate (23).

6. The tunable magnetron sputtering ring apparatus of claim 1, wherein: The hydraulic push rod (34) is made of non-magnetic material.

7. The tunable magnetron sputtering ring apparatus of claim 3, wherein: The outer ring back plate (41) and the central back plate (43) are made of materials with strong electrical conductivity.

8. The tunable magnetron sputtering ring apparatus of claim 7, wherein: The outer ring back plate (41) and the central back plate (43) are respectively arranged in non-full adhesion with the bottom of the outer ring target material (5) and the central target material (6). The inner wall of the outer ring target material (5) and the outer wall of the center target material (6) are attached close to the top area.

9. The tunable magnetron sputtering ring apparatus of claim 8, wherein: A through slot is formed on the outer ring back plate (41) for the power cable to pass through, so that the outer ring back plate (41) and the wiring terminal (42) on the center back plate (43) are electrically connected with the external power supply.

10. The tunable magnetron sputtering ring apparatus of claim 5, wherein: A sealing gasket is installed at the connection between the sealing cover (2) and the base (1), so as to help form a vacuum environment inside the sealing cover (2).

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