Adjustable magnetron sputtering ring device

Abstract

The present application relates to the technical field of magnetron sputtering, in particular to a kind of adjustable magnetron sputtering ring device.It includes base and the sealing cover of the top sealing installation of base, the vacuum environment is formed between the inner cavity of base and sealing cover, it is characterized in that: the top of base is provided with magnet cavity, and the central magnetic area and extension magnetic area are formed in magnet cavity inside.The outer ring target material is driven to lift by hydraulic push rod, and is fixed with the partition of connecting assembly, when only using central target material, outer ring target material can be moved to the central area magnetic field and the range outside electric field, reduce the invalid sputtering caused by edge effect from source, so that central, outer ring target material can work alone or cooperatively as needed, further reduce the loss of non-working area target material, improve the precise utilization rate of target material resources, avoid unnecessary consumption of outer ring target material, prolong the overall service life of target material.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of magnetron sputtering, in particular to an adjustable magnetron sputtering ring device. BACKGROUND

[0002] The adjustable magnetron sputtering ring device generates a basic magnetic field by arranging magnet units (such as alternating N / S poles) according to a specific rule, and uses an adjusting mechanism to adjust the magnetic field distribution in real time, so as to realize precise control of plasma density, sputtering rate and film uniformity.

[0003] In the working process of the adjustable magnetron sputtering ring device, the sputtering surface of the target material is directly opposite to the deposition surface of the substrate. At the same time, a small deposition surface of the substrate needs to be used with a small sputtering surface of the target material to prevent waste caused by a too large target material. A large deposition surface of the substrate needs to be used with a large sputtering surface of the target material, and the "large target material" can emit more ions to improve the film coating efficiency. The areas of the two are balanced with each other. Therefore, the existing device is mostly based on the same size of target material and substrate for simultaneous use.

[0004] Part of the different sizes of target materials and substrates usually control the power start of the target material by partition, and the target material area is powered according to the size of the substrate. However, on the one hand, although the outer ring area of the target material is not powered, it is easy to produce a small amount of plasma due to the influence of the edge effect of the central area electric field, and then the outer ring target material surface is bombarded to produce a small amount of sputtering atoms, causing waste of the outer ring target material. On the other hand, long-term use of a certain area of the target material will cause the target material in this area to be out of level with the target material in other areas, thereby affecting the sputtering direction and sputtering efficiency of each area of the target material, and further causing the uniformity of the film generated by sputtering to decrease. In view of this, we propose an adjustable magnetron sputtering ring device. SUMMARY

[0005] The purpose of the present application is to provide an adjustable magnetron sputtering ring device to solve the problem of uneven film coating caused by the influence of the edge effect of the central area electric field on the production of a small amount of plasma, which bombards the outer ring target material surface to produce a small amount of sputtering atoms, and the different loss efficiencies of the surface areas of the target material.

[0006] In order to achieve the above object, the application provides a tunable magnetron sputtering ring device, which comprises a base and a sealing cover sealingly installed on the top of the base, a vacuum environment is formed between the base and the inner cavity of the sealing cover, a magnet cavity is arranged on the top of the base, a central magnetic area and an extended magnetic area are formed in the magnet cavity, a central target and an outer ring target are arranged on the top of the magnet cavity, the size of the central target corresponds to the central magnetic area and is located directly above the central magnetic area, the size of the outer ring target corresponds to the extended magnetic area and is located directly above the extended magnetic area, a hydraulic push rod is embedded in the bottom of the inner cavity of the base, and the piston rod of the hydraulic push rod drives the outer ring target to move up and down, wherein the sputtering film size of the outer ring target in the extended magnetic area range is greater than the sputtering film size of the outer ring target when the outer ring target moves up and leaves the extended magnetic area range.

[0007] Further, the central magnetic area is provided with a central magnet and an inner ring magnet, the central magnet is located at the center of the magnet cavity, the inner ring magnet is arranged in a ring shape around the central magnet, the magnetic poles of the inner ring magnet and the central magnet located above are arranged in opposite directions, and the extended magnetic area is provided with an outer ring magnet, and the outer ring magnet is arranged around the inner ring magnet.

[0008] Further, the top of the magnet cavity is provided with a connecting assembly for directly fixing the central target and the outer ring target, the connecting assembly comprises an outer ring back plate and a central back plate, wherein the central back plate is used for fixing and installing the central target at the center of the top of the magnet cavity, so that the central magnet and the inner ring magnet jointly act on the central target, the outer ring back plate is used for installing and fixing the outer ring target, and the bottom of the outer ring back plate is connected with the elongated ends of a plurality of hydraulic push rods, so that the outer ring back plate moves horizontally upward or downward, and a plurality of outer ring magnets jointly acting on the outer ring target are uniformly arranged around the covering area of the outer ring back plate in the magnet cavity.

[0009] Further, the magnet cavity is provided with a flow channel for cooling liquid, and the flow channel flows through the plurality of magnets and the plurality of hydraulic push rods and does not directly contact the plurality of magnets and the plurality of hydraulic push rods.

[0010] Further, the inner top wall of the sealing cover is provided with a substrate holder, and the substrate holder is used for fixing and installing a large substrate or a small substrate.

[0011] Further, the hydraulic push rod is made of a non-magnetic material.

[0012] Further, the outer ring back plate and the central back plate are made of a material with strong electrical conductivity.

[0013] Further, the outer ring back plate and the central back plate are respectively non-wholly attached to the bottom of the outer ring target and the central target.

[0014] Further, the outer ring back plate is provided with a through slot for the power cable to pass through, so that the outer ring back plate and the wiring terminal on the center back plate are electrically connected with the external power supply.

[0015] Further, a sealing gasket is installed at the connection between the sealing cover and the base to help form a vacuum environment inside the sealing cover.

[0016] Compared with the prior art, the present application has the following beneficial effects:

[0017] 1. In the adjustable magnetic control sputtering ring device, the outer ring target material is driven to rise and fall by the hydraulic push rod, and is fixed in the partition of the connecting assembly. When only the center target material is used, the outer ring target material can be moved to the outside of the center area magnetic field and electric field range, thereby reducing the invalid sputtering caused by the edge effect from the source, and the center and outer ring target materials can work alone or cooperatively as needed, further reducing the loss of non-working area target material, improving the precise utilization rate of target material resources, avoiding unnecessary consumption of the outer ring target material, and prolonging the overall service life of the target material.

[0018] 2. In the adjustable magnetic control sputtering ring device, through the level adjustment cooperation of the horizontal sensor and the hydraulic push rod, the problem of uneven surface of the target material caused by long-term use of a single area target material can be detected and adjusted in real time, the height of the outer ring target material is adjusted to ensure that the top surface of the center target material and the outer ring target material is always level, avoiding problems such as sputtering direction deviation and uneven ion distribution caused by the height difference of the target material, and ensuring the stability of the sputtering process. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 It is a structural schematic diagram of the present application;

[0020] Figure 2 It is an exploded view of part of the components in the present application;

[0021] Figure 3 It is a schematic diagram of the connecting assembly and the target material in the present application;

[0022] Figure 4 It is a sectional view of the large substrate coating process (magnet side) in the present application;

[0023] Figure 5 It is a sectional view of the small substrate coating process (magnet side) in the present application;

[0024] Figure 6 It is a sectional view of the large substrate coating process (hydraulic push rod side) in the present application;

[0025] Figure 7 It is a sectional view of the small substrate coating process (hydraulic push rod side) in the present application.

[0026] The meanings of the various reference numbers in the drawings are as follows:

[0027] 1, base; 2, sealing cover; 21, substrate holder; 22, large substrate; 23, small substrate; 3, magnet cavity; 31, center magnet; 32, inner ring magnet; 33, outer ring magnet; 34, hydraulic push rod; 4, connecting assembly; 41, outer ring back plate; 42, terminal; 43, center back plate; 5, outer ring target material; 6, center target material. DETAILED DESCRIPTION

[0028] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0029] Embodiment 1

[0030] Please refer to Figures 1-7 The present embodiment provides an adjustable magnetron sputtering ring device, which comprises a base 1 and a sealing cover 2 sealingly installed on the top of the base 1. A vacuum environment is formed between the base 1 and the inner cavity of the sealing cover 2. A magnet cavity 3 is installed on the top of the base 1. A center magnet 31 is installed in the middle of the magnet cavity 3. A plurality of inner ring magnets 32 are uniformly installed around the center magnet 31 in the magnet cavity 3. The magnetic poles of the inner ring magnets 32 and the center magnet 31 located above are oppositely arranged, so that the magnetic induction lines between the inner ring magnets 32 and the center magnet 31 are guided from the N pole to the S pole, thereby forming a magnetic field. The center target material 6 and the outer ring target material 5 are both fixed to the top of the magnet cavity 3 by bolts. The center target material 6 is located at the center of the outer ring target material 5. The center target material 6 and the outer ring target material 5 are both provided with terminals 42. The terminals 42 are separately powered. The magnetic induction lines between the inner ring magnets 32 and the center magnet 31 are arranged to completely cover the target materials. At the same time, the magnet cavity 3 is also provided with a flow channel for cooling liquid to pass through, which is used for heat exchange during the sputtering process of the center target material 6 and the outer ring target material 5, so as to prevent the center target material 6 and the outer ring target material 5 from deforming. An anode terminal post is connected to the top end of the sealing cover 2, which is used to form a complete circuit with the center target material 6 and the outer ring target material 5. A substrate holder 21 is installed on the inner top wall of the sealing cover 2, which is used to fix a large substrate 22 or a small substrate 23, so that the ions can be uniformly laid on the large substrate 22 or the small substrate 23 during the sputtering process.

[0031] Therefore, the center target 6 and the outer ring target 5 are first fixed on the base 1 by bolts, then the large substrate 22 or the small substrate 23 is also fixed on the substrate holder 21 by bolts, then the sealing cover 2 is sleeved and fixed on the top of the base 1, the air inside the sealing cover 2 is pumped out through the gas outlet on the sealing cover 2 and the mechanical pump arranged outside, so that the space between the inside of the sealing cover 2 and the top of the base forms a vacuum environment, and then argon gas is injected into the inside of the sealing cover 2 from the gas inlet (argon gas is used because, as an inert gas, it cannot chemically react with the center target 6 and the outer ring target 5, and the large substrate 22 and the small substrate 23, and can be ionized to produce plasma); then, according to the large substrate 22 or the small substrate 23 used, the external power supply of the corresponding area is started, the center target 6 and the outer ring target 5 in this area are connected to negative high voltage, the top end of the sealing cover 2 is connected to positive (ground), so that an electric field is formed between the center target 6 and the outer ring target 5 and the sealing cover 2, at this time, the center target 6 and the outer ring target 5 act as cathodes, the sealing cover 2 acts as an anode, the direction of the electric field is from the sealing cover 2 to the center target 6 and the outer ring target 5, and the magnet cavity 3 remains fixed in the layout (the central and peripheral magnetic poles are arranged alternately, that is, N-S), so as to form a closed magnetic field on the surfaces of the center target 6 and the outer ring target 5.

[0032] However, the center target 6 and the outer ring target 5 are stacked together, and the outer ring target 5, although not electrified, is affected by the edge effect of the central electric field, generates a small amount of plasma, and further bombards the surface of the outer ring target 5 to generate a small amount of sputtered atoms, causing waste of the outer ring target 5. In addition, long-term use of the center target 6 or the outer ring target 5 can cause the surfaces of the center target 6 and the outer ring target 5 to be uneven, thereby causing the distance between the center target 6 or the outer ring target 5 and the sputtered and plated large substrate 22 or small substrate 23 to be different, thereby affecting the sputtering efficiency. Therefore, the magnet cavity 3 is formed with a center magnetic area and an extended magnetic area, wherein:

[0033] According to the center magnetic area and the extended magnetic area shown in Figure 4 The center magnetic area is provided with a center magnet 31 and an inner ring magnet 32, the center magnet 31 is located at the center of the magnet cavity 3, the inner ring magnet 32 is arranged in a ring shape around the center magnet 31, and the magnetic poles of the inner ring magnet 32 and the center magnet 31 located above are arranged opposite to each other; the extended magnetic area is provided with an outer ring magnet 33, and the outer ring magnet 33 is arranged around the inner ring magnet 32, the outer ring magnet 33 includes a group of single magnets with N-pole upward and a group of single magnets with S-pole upward, and the magnetic poles of the group of single magnets close to the inner ring magnet 32 above are arranged opposite to each other with the inner ring magnet 32;

[0034] The magnet cavity 3 top is provided with a center target 6 and an outer ring target 5, the size area of the center target 6 corresponds to the center magnetic area, and is located directly above the center magnetic area, and the size area of the outer ring target 5 corresponds to the extended magnetic area, and is located directly above the extended magnetic area; the inner cavity of the base 1 is embedded with a hydraulic push rod 34, and the piston rod of the hydraulic push rod 34 drives the outer ring target 5 to move up and down, wherein: the sputtering film size of the outer ring target 5 in the extended magnetic area range is greater than the sputtering film size of the outer ring target 5 moving up out of the extended magnetic area range;

[0035] The magnet cavity 3 top is provided with a center target 6 and an outer ring target 5, the size area of the center target 6 corresponds to the center magnetic area, and is located directly above the center magnetic area, and the size area of the outer ring target 5 corresponds to the extended magnetic area, and is located directly above the extended magnetic area; the inner cavity of the base 1 is embedded with a hydraulic push rod 34, and the piston rod of the hydraulic push rod 34 drives the outer ring target 5 to move up and down, wherein: the sputtering film size of the outer ring target 5 in the extended magnetic area range is greater than the sputtering film size of the outer ring target 5 moving up out of the extended magnetic area range;

[0036] The outer ring back plate 41 includes an outer ring shell and an inner ring shell, and a plurality of support rods are uniformly arranged between the outer ring shell and the inner ring shell, the outer ring target 5 is fixed on the installation support rod through bolts, and is located between the outer ring shell and the inner ring shell, and a plurality of groups of hydraulic push rods 34 are embedded on the top of the magnet cavity 3, the extension end of the plurality of groups of hydraulic push rods 34 is connected with the bottom of the support rod of the outer ring back plate 41, and is used as the power source for the horizontal upward or downward movement of the outer ring back plate 41;

[0037] It is worth noting that the hydraulic push rod 34 is made of non-magnetic material, mainly aluminum alloy or engineering plastic, so as to avoid interference with the magnetic field; in addition, the outer ring magnet 33 and the inner ring magnet 32 are isolated from each other by a non-magnetic piece, the non-magnetic isolation piece is made of austenitic stainless steel or ceramic material, and has a ring plate structure, the inner diameter of the ring plate structure matches the outer diameter of the inner ring magnet 32, and the outer diameter of the ring plate structure matches the inner diameter of the outer ring magnet 33, so as to avoid mutual interference of the magnetic field, so that the outer ring magnet 33 only acts on the outer ring target 5, and when the outer ring target 5 is not powered on for sputtering, the outer ring magnet 33 will not interfere with the magnetic field of the center magnet 31 and the inner ring magnet 32;

[0038] Meanwhile, a horizontal sensor is also installed on the outer ring back plate 41, which is used to detect the degree of the top surface of the outer ring target 5 and the center target 6 being flush during the up and down movement of the outer ring target 5, and is set to cooperate with the hydraulic push rod 34 to keep the top surface of the outer ring target 5 and the center target 6 flush.

[0039] And, on the basis of the above, first by the center back plate 43 will be fixed in the center of the magnet cavity 3 top center target material 6, and then the outer ring target material 5 is fixed by bolted to the outer ring back plate 41; then according to the choice of large substrate 22 or small substrate 23, the choice of single center back plate 43 power supply, or at the same time to the center back plate 43 and outer ring back plate 41 power supply, so, in the small substrate 23 sputtering coating, only the center target material 6 work, can be driven by hydraulic push rod 34 outer ring back plate 41 with outer ring target material 5 horizontal up, away from the center area magnetic field and electric field range, due to the isolation design of the outer ring magnet 33 and the inner ring magnet 32, avoid the outer ring magnet 33 on the center area magnetic field interference, reduce the edge effect of the center area electric field on the outer ring target material 5; in addition, for large substrate 22 sputtering coating, the horizontal sensor sends a signal, the outer ring back plate 41 is pushed by hydraulic push rod 34, so that the outer ring target material 5 is moved to the upper surface of the center target material 6 upper surface level position;

[0040] After the above preparation work, start to seal cover 2 extraction of air, injection of argon, and start the corresponding power supply to form an electric field, ionization of argon plasma, argon ion bombardment power supply area outer ring target material 5 or center target material 6 surface, outer ring target material 5 or center target material 6 atom sputtering to large substrate 22 or small substrate 23 to form a thin film.

[0041] On the one hand, only the center back plate 43 power supply, so that the center target material 6 sputtering activity, the outer ring target material 5 is moved up by hydraulic push rod 34, the center target material 6 surface trace sputtering phenomenon, the influence of the outer ring target material 5 surface is basically eliminated, the actual operation verification, the outer ring target material 5 invalid loss rate can be reduced by more than 80%, the outer ring target material 5 and center target material 6 overall service life is prolonged by 30%-50% than prior art; in the partition mode, the non working area target material has almost no additional loss, avoiding the waste of resources, reducing the material cost of coating process;

[0042] On the other hand, through the horizontal sensor detection, hydraulic drag rod adjustment, when the center target material 6 is used for a long time, the horizontal height of the center target material 6 is reduced, so that the upper surface of the center target material 6 is slightly lower than the outer ring target material 5, at this time, the outer ring target material 5 is indirectly driven by the hydraulic drag rod to move horizontally downward, so that the upper surface of the outer ring target material 5 and the center target material 6 is kept flush, which can avoid the problems of sputtering direction deviation and ion distribution uneven caused by the difference in height of the target material, and ensure the stability of the sputtering process.

[0043] According to Figure 4 And Figure 5As shown, in addition, the outer ring magnet 33 includes a set of single magnets with N poles facing upward and a set of single magnets with S poles facing upward. The set of single magnets close to the inner ring magnet 32 ​​has the opposite magnetic poles to the inner ring magnet 32. In the invention, the N pole of the central magnet 31 faces upward and the S pole of the inner ring magnet 32 ​​faces upward. The single magnets with N poles facing upward in the outer ring magnet 33 are arranged close to the inner ring magnet 32, and the single magnets with N poles facing upward are arranged away from the inner ring magnet 32. The cross-section forms an alternating arrangement of N / S poles, so that a complete magnetic field is formed between them.

[0044] It is worth noting that the alternating dual-single magnet layout of the outer ring magnet 33 not only strengthens magnetic field isolation, but also allows the magnetic field edges of the central target 6 and the outer ring target 5 to be seamlessly connected when they work together, forming a uniform magnetic field band covering the entire target surface, ensuring that the sputtering atomic density of the edge region of the large substrate 22 or the small substrate 23 is consistent with that of the central region.

[0045] like Figure 6 and Figure 7 As shown, a substrate holder 21 is installed on the inner top wall of the sealing cover 2. The mounting base on the substrate holder 21 can install and fix a large substrate 22 or a small substrate 23. The substrate is directly fixed to the mounting base by bolts. After the sputtering coating is completed, the next set of substrates to be coated is replaced.

[0046] according to Figures 6-7 As shown, the magnet cavity 3 in this invention has a flow channel for coolant to pass through. The flow channel is configured to flow between multiple sets of magnets and several sets of hydraulic push rods 34 without directly contacting the multiple sets of magnets and several sets of hydraulic push rods 34. The coolant directly contacts the upper surface of the magnet cavity 3 and indirectly contacts the target material. When the coolant circulates through the flow channel, it first undergoes efficient heat exchange with the upper surface of the magnet cavity 3, and then is indirectly conducted to the bottom of the target material through the upper surface of the magnet cavity 3, thereby realizing heat exchange and preventing the target material from deforming due to excessive temperature during sputtering, which would cause the target sputtering angle to deviate.

[0047] Meanwhile, the outer ring backplate 41 and the central backplate 43 are not fully bonded to the bottom of the outer ring target 5 and the central target 6, respectively, which increases the area in which the central target 6 and the outer ring target 5 can directly contact the upper surface of the magnet cavity 3 through the air, and can more effectively help the target to dissipate heat.

[0048] Furthermore, the inner wall of the outer ring target 5 and the outer wall of the central target 6 are fitted together near the top area, ensuring that the formed large substrate 22 is more complete and uniform.

[0049] The outer ring back plate 41 and the center back plate 43 are made of a material with high conductivity, so that on the one hand, the energy loss (loss rate ≤ 3%) in the current transmission process can be reduced, the target material can obtain stable and sufficient negative high voltage power supply, and the instability of the plasma density caused by voltage fluctuation can be avoided; on the other hand, the high conductivity material has excellent heat conduction performance, which can reduce the contact between the outer ring target 5 and the outer ring back plate 41, and also can fully conduct electricity, so that the external power supply is transmitted to the bottom surface of the external target through the wiring end 42.

[0050] In summary, the overall workflow of the present application is as follows: first, the center target 6 and the outer ring target 5 are assembled on the center back plate 43 and the outer ring back plate 41 respectively through bolts, and the center target 6 is fixed on the top center of the magnet cavity 3 through the center back plate 43, and the outer ring target 5 is fixed on the support rod of the outer ring back plate 41, according to the film coating requirement, a large substrate 22 or a small substrate 23 with corresponding size is selected, the large substrate 22 or the small substrate 23 is fixed on the substrate holder 21 fixed seat of the inner top wall of the sealing cover 2, to ensure that the deposition surface of the large substrate 22 or the small substrate 23 faces downward, then the sealing cover 2 is sleeved and fixed on the top of the base 1, and the external mechanical pump is connected through the gas outlet of the sealing cover 2, to extract the internal air to form a vacuum environment; then, argon is injected into the sealing cover 2 through the gas inlet, to replace the gas in the vacuum cavity and provide an inert environment for plasma generation;

[0051] Then, the working target area is determined according to the substrate size, when the small substrate 23 is coated, only the external power supply corresponding to the center target 6 is started, the outer ring target 5 remains in a power-off state, the hydraulic push rod 34 at the top of the magnet cavity 3 is started, to drive the outer ring back plate 41 and the outer ring target 5 to move horizontally upward, until the outer ring target 5 completely leaves the magnetic field and electric field range of the center area, to avoid invalid sputtering caused by edge effect; when the large substrate 22 is coated, the external power supply of the center target 6 and the outer ring target 5 is started at the same time, to ensure that the two groups of target materials independently obtain stable negative high voltage, the height of the outer ring target 5 is adjusted by the hydraulic push rod 34, to preliminarily make the outer ring target 5 roughly flush with the top surface of the center target 6;

[0052] Under the action of electric field, the electron impacts argon molecule to ionize argon ion and free electron, the free electron is accelerated by electric field to continuously impact more argon molecules, to initiate avalanche ionization, to gradually form a plasma region uniformly covering the surface of the working target material, the positively charged argon ion is accelerated to the negatively charged target material surface under the action of electric field force, to transfer kinetic energy to the target material atom, to make the target material atom overcome surface binding energy and be deposited; the deposited target material atom moves along a straight line, transmits to the deposition surface of the upper large substrate 22 or small substrate 23 through the plasma region, and gradually forms a uniform thin film through physical adsorption, diffusion and condensation process, after the thin film deposition reaches the preset thickness, the external power supply corresponding to the target material is first turned off, the plasma generation and sputtering process are stopped, air is slowly introduced through the air inlet of the sealing cover 2, the air pressure inside and outside the cavity is balanced, the sealing cover 2 is disassembled, the coated substrate is taken off from the substrate rack 21, and a coating operation is completed, then the substrate is replaced to continue the next coating operation.

[0053] The basic principle, main features and advantages of the present application are shown and described above. It should be understood by those skilled in the art that the present application is not limited by the above-mentioned embodiments, the above-mentioned embodiments and descriptions in the specification are only preferred examples of the present application, and are not intended to limit the present application, various changes and improvements can be made to the present application without departing from the spirit and scope of the present application, and these changes and improvements all fall within the scope of the present application. The scope of protection of the present application is defined by the appended claims and their equivalents.

Claims

1. An adjustable magnetron sputtering ring device, comprising a base (1) and a sealing cover (2) sealed and mounted on the top of the base (1), wherein a vacuum environment is formed between the base (1) and the inner cavity of the sealing cover (2), characterized in that: The base (1) is provided with a magnet cavity (3) at the top, and a central magnetic region and an extended magnetic region are formed inside the magnet cavity (3); The top of the magnet cavity (3) is also provided with a central target (6) and an outer ring target (5). The size and area of ​​the central target (6) correspond to the central magnetic region and are located directly above the central magnetic region. The size and area of ​​the outer ring target (5) correspond to the extended magnetic region and are located directly above the extended magnetic region. A hydraulic push rod (34) is embedded at the bottom of the inner cavity of the base (1). The piston rod of the hydraulic push rod (34) drives the outer ring target (5) to move up and down, wherein: The sputtered coating size of the outer ring target (5) within the extended magnetic region is larger than the sputtered coating size of the outer ring target (5) when it moves upward and leaves the extended magnetic region. A central magnet (31) and an inner ring magnet (32) are installed in the central magnetic region. The central magnet (31) is located at the center of the magnet cavity (3). The inner ring magnet (32) is arranged to be uniformly installed in a ring around the central magnet (31). The magnetic poles of the inner ring magnet (32) and the central magnet (31) are opposite to each other at the top. An outer ring magnet (33) is installed in the extended magnetic region, and the outer ring magnet (33) is uniformly arranged around the inner ring magnet (32). The outer ring magnet (33) includes a set of single magnets with N pole facing upward and a set of single magnets with S pole facing upward. The magnetic poles of the set of single magnets that are close to the inner ring magnet (32) are opposite to those of the inner ring magnet (32).

2. The adjustable magnetron sputtering ring device according to claim 1, characterized in that: The magnet cavity (3) is equipped with a connecting assembly (4) for directly fixing the central target (6) and the outer ring target (5) at its top. The connecting assembly (4) includes an outer ring back plate (41) and a central back plate (43), wherein: The central backplate (43) is used to fix the central target (6) at the top center of the magnet cavity (3) so that the central magnet (31) and the inner ring magnet (32) work together on the central target (6). The outer ring back plate (41) is used to install and fix the outer ring target (5), and is configured to connect the bottom of the outer ring back plate (41) to the extended ends of several sets of hydraulic push rods (34) so ​​that the outer ring back plate (41) can move horizontally upward or downward; multiple sets of outer ring magnets (33) are uniformly arranged around the area covered by the outer ring back plate (41) in the magnet cavity (3) to act on the outer ring target (5).

3. The adjustable magnetron sputtering ring device according to claim 1, characterized in that: The magnet cavity (3) is provided with a flow channel for coolant to pass through, and the flow channel is configured to flow between multiple sets of magnets and several sets of hydraulic push rods (34) without directly contacting the multiple sets of magnets and several sets of hydraulic push rods (34).

4. The adjustable magnetron sputtering ring device according to claim 1, characterized in that: The inner top wall of the sealing cover (2) is equipped with a substrate holder (21), which is used to install and fix a large substrate (22) or a small substrate (23).

5. The adjustable magnetron sputtering ring device according to claim 1, characterized in that: The hydraulic push rod (34) is made of non-magnetic material.

6. The adjustable magnetron sputtering ring device according to claim 2, characterized in that: Both the outer ring back plate (41) and the central back plate (43) are made of highly conductive materials.

7. The adjustable magnetron sputtering ring device according to claim 6, characterized in that: The outer ring back plate (41) and the central back plate (43) are respectively not fully bonded to the bottom of the outer ring target (5) and the central target (6); The inner wall of the outer ring target (5) and the outer wall of the central target (6) are fitted together near the top area.

8. The adjustable magnetron sputtering ring device according to claim 7, characterized in that: The outer ring back plate (41) is provided with a through groove for the cable to pass through, so that the wiring terminal (42) on the outer ring back plate (41) and the center back plate (43) can be electrically connected to the external power supply.

9. The adjustable magnetron sputtering ring device according to claim 4, characterized in that: A sealing gasket is installed at the connection between the sealing cover (2) and the base (1) to help create a vacuum environment inside the sealing cover (2).

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