A method for analyzing the effect of leakage rate on water vapor pumping behavior in high vacuum systems
By introducing a water vapor adsorption-desorption kinetic model within the finite element simulation framework, and combining static pressure rise experiments and pumping experiments, the problem of difficulty in assessing the influence of leakage rate and pore distribution on the water vapor pumping behavior of high vacuum systems in existing technologies has been solved, achieving high-precision water vapor pressure analysis and vacuum performance evaluation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2025-12-22
- Publication Date
- 2026-03-10
AI Technical Summary
Existing technologies lack systematic calibration of key parameters by combining pumping experiments, making it difficult to reflect the impact of leakage rate and leakage hole spatial distribution on water vapor pumping behavior in high vacuum systems. Furthermore, external leakage rates are ignored or simply treated, resulting in a lack of reliable basis for the design and sealing optimization of high vacuum systems.
A water vapor adsorption-desorption kinetic model is introduced within the finite element simulation framework. Combined with static pressure rise experiments and pumping experiments under different internal structural configurations, the time evolution and spatial distribution of water vapor pressure are solved using the finite element method. Adsorption kinetic parameters are calibrated, and the effects of leakage rate and spatial distribution of leakage pore elements on pumping behavior are analyzed.
It enables high-precision quantitative evaluation of water vapor pumping behavior in high vacuum systems, provides a reliable basis for system design and sealing optimization, can reflect the influence of local pressure distribution under complex structures, and improves the accuracy of vacuum performance evaluation.
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Figure CN121365565B_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of vacuum technology, specifically relating to a method for analyzing the effect of leakage rate on water vapor pumping behavior in high vacuum systems, which is particularly applicable to fields with strict vacuum requirements such as semiconductor manufacturing, thin film deposition, surface science, and aerospace simulation. Background Technology
[0002] Vacuum technology is widely used in semiconductor manufacturing, thin film deposition, surface science, and aerospace simulation. The vacuum achieved and performance maintained by a high-vacuum system directly affect the stability of related processes. The gases in a vacuum system mainly originate from permeation through chamber walls, micro-leakage within the vacuum chamber, desorption and release from the surfaces of internal components, and gases introduced or generated during the process. Among these, water vapor, due to its ubiquitous presence in ambient air and its strong adsorption and slow desorption characteristics on metal surfaces, often becomes the main residual gas component in high-vacuum systems, significantly impacting the system's ultimate vacuum and pumping time.
[0003] In high-vacuum chambers primarily constructed of stainless steel, water vapor sources can be simplified to two pathways: external leakage and internal surface desorption. To describe the changes in water vapor pressure during pumping, existing technologies have proposed various pumping models based on the assumption of reversible monolayer adsorption. These models treat the chamber wall as a reversible adsorbed phase and establish pressure-time relationships using adsorption isotherms and mass conservation equations. Some studies further consider surface heterogeneity and complex geometries. However, these methods typically rely on empirically given adsorption kinetic parameters and lack systematic calibration of key parameters through pumping experiments. To simplify calculations, they often assume uniform pressure within the chamber, making it difficult to reflect local pressure differences caused by internal components such as louvers, anti-fouling panels, and long pipes. External leakage rates are often ignored or treated with simple equivalence, lacking methods to analyze the impact of measured leakage rates and the spatial distribution of leaks on the pumping curve and local water vapor pressure within the chamber.
[0004] Therefore, there is an urgent need for a high-precision analysis method that can comprehensively consider actual leakage conditions, surface adsorption kinetics, and complex geometries, in order to more realistically simulate and evaluate the pumping behavior of water vapor in high vacuum systems, and provide a reliable basis for system design, seal optimization, and leak diagnosis. Summary of the Invention
[0005] To address the aforementioned issues, this invention provides a method for analyzing the impact of leakage rate on water vapor pumping behavior in high vacuum systems. A water vapor adsorption-desorption kinetic model is introduced within a unified finite element simulation framework and combined with static pressure rise experiments and pumping experiments under different internal structural configurations. This method obtains water vapor adsorption kinetic parameters applicable to the target chamber, enabling quantitative assessment of the temporal evolution and spatial distribution of water vapor pressure under different external leakage rates and leak spatial distribution conditions. This provides a basis for evaluating the vacuum performance and optimizing the structure of complex high vacuum systems.
[0006] To achieve the above technical objectives, the present invention adopts the following technical solution:
[0007] A method for analyzing the effect of leakage rate on water vapor pumping behavior in a high vacuum system includes the following steps:
[0008] (1) The leakage rate of the high vacuum system is measured to obtain the external leakage rate of water vapor in the vacuum chamber; the vacuum chamber is pumped under at least two internal structure configurations, and the change of water vapor pressure over time is recorded to obtain the experimental water vapor pumping curve.
[0009] (2) Establish a three-dimensional geometric model corresponding to the vacuum chamber, set the inner wall of the chamber, internal components and leakage hole units, and obtain a finite element model including leakage rate setting;
[0010] (3) Introduce the water vapor adsorption-desorption kinetic equation into the finite element model, solve the model using the finite element method, and obtain the simulated water vapor extraction curve;
[0011] (4) Determine the adsorption kinetic parameters based on the matching between the experimental water vapor extraction curve and the simulated water vapor extraction curve;
[0012] (5) Based on the adsorption kinetic parameters, change the external leakage rate of water vapor and / or the spatial distribution of the leakage unit to solve for the change of water vapor pressure with time and the spatial distribution of water vapor pressure under different conditions.
[0013] In step (1), a static pressure rise experiment is preferably used to determine the total external leakage rate Q of the vacuum chamber. total .
[0014] In the static pressure rise experiment, the vacuum chamber is evacuated to a predetermined initial pressure by the vacuum acquisition system, then the connection between the chamber and the vacuum acquisition system is disconnected, and the pressure change in the chamber over time is recorded. The relationship between the chamber volume V and the pressure change rate dP is then analyzed. total The total external leakage rate Q is calculated using / dt. total Preferably, the total external leakage rate Q total Determine by the following formula: Where V is the chamber volume, dPtotal / dt represents the rate of pressure change.
[0015] Taking into account ambient temperature T, relative humidity RH, and total ambient pressure P atm Calculate the ambient water vapor pressure P. Preferably, P is determined through the relationship between the saturated vapor pressure of water and relative humidity. The external water vapor leakage rate Q is determined by the following formula: .
[0016] In step (1), pumping experiments are conducted on the vacuum chamber under different internal structural configurations. Each internal structural configuration is formed by adjusting the combination of internal components of the chamber to obtain experimental curves of water vapor pumping process under different internal structural configurations.
[0017] In each internal structure configuration, the vacuum chamber is evacuated to a predetermined vacuum state by the vacuum acquisition system and then released to the atmosphere, and maintained for a preset time to fully expose the inner wall of the chamber and the surface of the internal components to ambient water vapor.
[0018] After the preset time is reached, the vacuum acquisition system is restarted to evacuate the vacuum chamber. During the evacuation process, a residual gas analyzer (RGA) is used to measure the change of water vapor pressure P(t) in the chamber with time t.
[0019] The curve of water vapor pressure P(t) versus time t is used as the water vapor extraction curve under the corresponding internal structure configuration.
[0020] Preferably, the evacuation experiments under each internal structure configuration use the same initial evacuation conditions and evacuation time in order to compare the effects of different internal structure configurations on water vapor evacuation behavior.
[0021] In step (2), a three-dimensional geometric model corresponding to the vacuum chamber is established. The three-dimensional geometric model includes the inner wall of the chamber and the geometry of the internal components introduced according to the internal structure configuration.
[0022] In the three-dimensional geometric model, surface areas corresponding to potential leakage locations such as external openings, flange interfaces, or instrument connection ports are identified.
[0023] The inner wall of the cavity, the surface of the internal components, and the surface areas of the potential leakage locations are defined as boundaries in the finite element model to apply corresponding boundary conditions.
[0024] In the finite element model, the surface boundary representing the potential leak location is set as a leak hole element, which is a boundary element in the finite element model and is used to characterize the micro-leak connection path between the external environment and the interior of the cavity.
[0025] An equivalent molecular flux boundary condition or an equivalent leak outlet boundary condition is applied to the leak element to introduce an external leakage effect into the finite element model.
[0026] Preferably, the equivalent molecular flux J on the perforated unit leak The external water vapor leakage rate Q and the equivalent surface of the leakage hole A can be determined based on the set external water vapor leakage rate Q and the leakage hole equivalent surface A. leak The calculation yields a finite element model that includes leak elements and leak rate settings.
[0027] In step (3), the water vapor molecule transport process inside the chamber and the adsorption-desorption behavior of the inner wall surface of the chamber are coupled and solved under molecular flow conditions to obtain the simulated water vapor pumping curve.
[0028] Preferably, the adsorption-desorption kinetic equation adopts an adsorption model characterizing surface heterogeneity, and its surface adsorption energy E b The relationship with surface coverage θ is as follows .
[0029] Where E1 is the initial adsorption energy, K Q θ is the scaling factor, and θ is the surface coverage.
[0030] Under this model, the water vapor adsorption flux J ads Desorption flux J des The residence time τ and surface coverage θ preferably satisfy the following conservation relationship: , , , .
[0031] Where S0 is the adhesion coefficient, n sites J represents the saturation adsorption site density. inc (t) represents the incident molecule flux.
[0032] Incident molecular flux J inc It can be determined based on the water vapor pressure P(t) and the average molecular thermal velocity within the chamber. The relationship is calculated using the following formula: .
[0033] In the numerical solution process, by adjusting S0 and n sites And E1, K Q The adsorption-desorption kinetic parameters ensured that the simulated water vapor pumping curve and the experimentally measured pumping curve showed good consistency in both the initial pumping stage and the high vacuum stage.
[0034] Preferably, in step (4), the rationality of using quasi-static equilibrium conditions to solve the gas extraction process is confirmed by checking the quasi-static equilibrium conditions.
[0035] This invention is based on the chamber volume V, the internal surface area A, and the average molecular thermal velocity of water vapor. Based on the vacuum pump speed S, a quasi-static equilibrium criterion threshold is defined. .
[0036] This invention defines the instantaneous relative rate of change of water vapor pressure. , is used to characterize the time scale of pressure changes during the pumping process.
[0037] When the air extraction process meets the requirements At that time, it was assumed that the time scale of water vapor pressure change was much larger than the time scale of molecules flying and reflecting multiple times in the chamber to establish spatial distribution. The pumping process can be regarded as satisfying the quasi-static equilibrium condition. Under this assumption, the time evolution of water vapor pressure inside the chamber was solved by the molecular flow model and the surface flux balance relationship.
[0038] In step (5), after the adsorption-desorption kinetic parameters are calibrated in step (4), the parameters are fixed for subsequent simulations.
[0039] In the simulation operating condition settings, the value of the external water vapor leakage rate Q is changed to construct operating condition models under different leakage rate levels.
[0040] Preferably, a baseline leak rate and several multiples thereof can be selected as representative operating conditions to analyze the impact of leak rate amplification on the water vapor extraction curve and the internal pressure distribution of the chamber.
[0041] Meanwhile, the distribution of the leakage elements in the geometric model can be changed to construct working condition models under different combinations of leakage locations.
[0042] For each combination of leakage rate level and leakage location, numerical solutions are obtained using the finite element model established in step (3) and the adsorption-desorption kinetic parameters calibrated in step (4).
[0043] The change in water vapor pressure P(t) inside the chamber with time and its spatial distribution under various operating conditions are obtained by solving the problem. This is used to characterize the influence of different leakage rates and leakage locations on the water vapor behavior of the high vacuum system.
[0044] Compared with the prior art, the present invention has the following beneficial effects:
[0045] 1. This invention obtains the total external leakage rate of the vacuum chamber through a static pressure rise experiment, calculates the external leakage rate of water vapor by combining the ambient temperature and relative humidity, and applies it to the boundary of the leak unit in the form of an equivalent molecular flux, so that the leakage conditions can be given by measurable physical quantities. The simulated working conditions and the actual working conditions have a good correspondence in terms of leakage rate level.
[0046] 2. This invention introduces the adsorption-desorption kinetic equation of a surface heterogeneous monolayer into the finite element model, correlates the adsorption energy with the coverage, and uses experimental pumping curves under various internal structure configurations to jointly calibrate the relevant parameters. This allows the simulation results to reflect the water vapor pressure changes in the initial stage of pumping and the high vacuum stage more consistently. Compared with the method of using only a simplified adsorption model, this invention has certain advantages in describing the water vapor pumping process.
[0047] 3. This invention establishes a complex geometric finite element model including the inner wall of the chamber, internal components, and leakage elements. Under quasi-static equilibrium conditions, it calculates the temporal evolution and spatial distribution of water vapor pressure under different combinations of external leakage rates and leakage locations. It can quantitatively analyze the vacuum levels in areas such as the main chamber, near the chamber door, and pump pipelines, and can be used to compare the influence of different sealing structures and internal component arrangements on local vacuum levels, providing a reference for the structural design and leakage diagnosis of high vacuum systems. Attached Figure Description
[0048] Figure 1 This is the overall flowchart of the present invention;
[0049] Figure 2 This is a graph showing the changes in total pressure and pressure rise rate with pressure rise time in an example of the present invention;
[0050] Figure 3 This is a graph showing the change of water vapor pressure with pumping time in an example of the present invention.
[0051] Figure 4 This is a comparison chart of simulation results and experimental data in an example of the present invention;
[0052] Figure 5 This is a graph showing the changes in water vapor pressure caused by different leakage rates in an example of the present invention.
[0053] Figure 6 This is a spatial distribution diagram of water vapor pressure in the chamber under different spatial distributions of leakage units in an example of the present invention. Detailed Implementation
[0054] The technical solution of the present invention will be described in detail, completely and clearly below with reference to the accompanying drawings and embodiments, so as to ensure that those skilled in the art can fully understand and implement the present invention based on the specification.
[0055] Example 1
[0056] This embodiment uses a stainless steel high vacuum chamber as an example to illustrate a method for analyzing the effect of leakage rate on water vapor pumping behavior in a high vacuum system.
[0057] like Figure 1As shown, the method in this embodiment includes, in sequence: measuring the external leakage rate of water vapor, measuring the water vapor pumping curve, establishing a finite element model including leakage rate settings, introducing the water vapor adsorption-desorption kinetic equation, solving the simulated pumping curve and determining the adsorption kinetic parameters, and analyzing the influence of different leakage rates and the spatial distribution of leak holes on the water vapor pumping process and the spatial uniformity of pressure in the cavity.
[0058] The chamber is mainly made of SUS 316L and SUS 304 stainless steel, with typical internal dimensions of approximately 1050 mm × 830 mm × 770 mm. Louvers and anti-fouling panels can be installed inside to form different internal structural configurations according to experimental needs.
[0059] The vacuum generation system consists of a backing dry pump and a cryogenic pump connected in series, which can pump the chamber pressure to 10. -6 The vacuum monitoring unit is in the Pa range. It includes a full-range vacuum gauge and an RGA (Remote Gauge).
[0060] After the chamber is sealed, it is heated to 260°C and continuously evacuated under the action of the vacuum system to allow water molecules on the chamber wall to fully desorb. After the chamber cools naturally to room temperature, the valve between the vacuum system and the chamber is closed to isolate the chamber from the vacuum system.
[0061] Record the total pressure of the chamber under isolated conditions. Over time The change in pressure rise rate dP total / dt and chamber volume Substitute into the formula The total external leakage rate of the chamber was obtained. The curves showing the change in total pressure and its rate of pressure rise over time after chamber isolation are shown below. Figure 2 As shown, the total external leakage rate obtained in this embodiment is approximately 1.82 × 10⁻⁶. -4 Pa·L / s.
[0062] Under environmental conditions of 22°C room temperature and 64% relative humidity, the volume fraction of water vapor in the atmosphere is calculated to be approximately 1.7% based on the saturated water vapor pressure. Therefore, the total external leakage rate Q is... total Converted to external water vapor leakage rate, the external water vapor leakage rate is 3.1 × 10⁻⁶. -6 Pa·L / s, and this value will be used as the baseline external leakage rate Q0 in subsequent modeling.
[0063] To simulate the adsorption state of the chamber during typical use, the chamber is slowly vented from a high vacuum state to atmospheric pressure, and the chamber door is opened to expose the inner wall and the surface of the internal components to the atmospheric environment. This process is maintained for a preset time to allow the surface water molecules to be nearly saturated.
[0064] The chamber door was then closed, a vacuum was started to evacuate the system, and the change in water vapor pressure over time was recorded using an RGA.
[0065] In this embodiment, the following four internal structural configurations were selected for water vapor extraction experiments: (1) no louvers / no anti-fouling plate; (2) with louvers / no anti-fouling plate; (3) with louvers / with anti-fouling plate; (4) no louvers / with anti-fouling plate. Figure 3 As shown, the water vapor pressure variation curves measured under different internal structural configurations serve as the experimental basis for calibrating adsorption kinetic parameters.
[0066] A three-dimensional geometric model corresponding to the chamber structure is established. The geometric model includes internal components such as the inner wall of the chamber, louvers, and anti-fouling panels, as well as the location of external interfaces. The inner wall of the chamber, the surfaces of internal components, and the surfaces of external interfaces are defined as boundaries in the finite element model to apply corresponding molecular flux boundary conditions.
[0067] Leakage elements are set on the boundaries of the external interface surfaces such as the corresponding cavity sealing ring and flange joint. Based on the equivalent area of each leakage element, the reference water vapor external leakage rate is distributed to each leakage element so that the total leakage rate in the finite element model is consistent with the reference external leakage rate Q0.
[0068] Water vapor adsorption-desorption kinetic boundary conditions are applied to the surface units of the chamber walls and internal components. This embodiment employs a monolayer adsorption model characterizing surface heterogeneity, with an adsorption energy E... b The following relationship exists between the surface coverage θ and the surface coverage θ: .
[0069] Adsorption flux Adhesion coefficient Surface coverage and incident molecular flux The following conditions must be met: .
[0070] Desorption flux Number of adsorbed molecules per unit area and length of stay The following conditions must be met: .
[0071] Saturated adsorption site density and surface coverage Over time The changes satisfy the law of conservation of mass: .
[0072] Duration of stay Satisfying the Arrhenius relation: .
[0073] in, This is the inherent oscillation frequency of the molecule. The gas constant is Thermodynamic temperature;
[0074] Within the pressure range covered in this embodiment, the gas flow within the chamber is in a molecular flow state. To ensure the rationality of the finite element solution, the pumping process is checked according to the aforementioned quasi-static equilibrium criterion. The maximum value of η(t) calculated from the experimental pumping curve data is approximately 0.014 s. -1 This is much smaller than the values calculated based on the vacuum pump speed S, chamber volume V, chamber surface area A, and average molecular thermal velocity of water vapor. The threshold η calculated according to the quasi-static equilibrium criterion qs =1105.2 s -1 Therefore, the pumping process can be considered to satisfy the quasi-static equilibrium condition. Under the above molecular flow and quasi-static equilibrium conditions, the finite element model is solved to obtain the evolution of water vapor pressure inside the chamber over time and its spatial distribution.
[0075] To determine the adsorption kinetic parameters, the following parameter value ranges are set in this embodiment:
[0076] S0: 0.01~0.5; n sites 3.3×10 -5 ~8.3×10 -4 mol / m 2 E1: 80–100 kJ / mol; K Q : 10~50 kJ / mol.
[0077] The above parameter ranges were selected with reference to reports in published literature on the adsorption characteristics of water vapor on stainless steel surfaces, and in combination with the material of this chamber and the actual evacuation conditions.
[0078] Under the internal structure configuration of "no louvers / no anti-fouling panels", multiple parameter combinations were selected for simulation, and water vapor extraction curves were calculated and compared with corresponding experimental results. The parameter combination that simultaneously satisfies the trends of the initial extraction stage and the high vacuum stage was selected as the calibrated adsorption kinetic parameters. For example... Figure 4 As shown, the water vapor extraction curve obtained by simulation using calibrated parameters matches the experimental curve well.
[0079] After determining the adsorption kinetic parameters, the external leakage rate of water vapor and the distribution of leakage units were changed to calculate the temporal evolution and spatial distribution of water vapor pressure in the chamber under different operating conditions.
[0080] like Figure 5As shown, under the "no louvers / no anti-fouling plate" configuration, the external leakage rate was set to Q = Q0, 10Q0, 100Q0, 1000Q0 and 10000Q0 in sequence. The change of water vapor pressure at the RGA measuring point was calculated relative to the condition without leakage rate setting, which was used to analyze the change characteristics of water vapor pressure under different leakage rate levels.
[0081] like Figure 6 As shown, while keeping the total external leakage rate constant, the leaks are concentrated at the cavity door sealing ring position and the RGA flange joint position, respectively. The spatial distribution of water vapor pressure inside the cavity is calculated under a given evacuation time to compare the influence of different leakage locations on the spatial distribution of water vapor pressure.
[0082] This embodiment integrates the external water vapor leakage rate measured by static pressure rise experiments, the multi-configuration pumping experiment curves, and a finite element model based on surface heterogeneous adsorption kinetics (adsorption energy varies with coverage) to invert and calibrate key adsorption parameters, thus constructing a high-fidelity simulation model. This solves the technical problems of existing methods that rely on empirical parameters, neglect the spatial effect of leakage rate, and struggle to assess local pressure distribution under complex structures. It achieves high-precision quantitative analysis of the magnitude of leakage rate and its spatial distribution, providing a reliable basis for high-vacuum system design optimization and leak diagnosis.
[0083] Specific embodiments of the present invention have been described above. It should be understood that the present invention is not limited to the specific embodiments described above, and those skilled in the art can make various modifications or variations within the scope of the claims, which do not affect the essence of the present invention. Where there is no conflict, the above embodiments and features described therein can be combined with each other.
Claims
1. A method of analyzing the effect of leak rate on water vapor pumping behavior in a high vacuum system, characterized by, The method comprises the following steps: Step S1. Obtain measured data A static pressure rise experiment is performed on the target high vacuum system to measure the total external leak rate of the high vacuum system, and the total external leak rate is converted into a water vapor external leak rate according to environmental parameters; Water vapor pumping experiments are performed under at least two different internal structure configurations, and the change of water vapor pressure with time is recorded synchronously to obtain a plurality of experimental water vapor pumping curves; Step S2. Establish a finite element model including leak rate settings Based on the specific structure of the high vacuum system corresponding to the experiment in step S1, a three-dimensional geometric model including the inner wall of the chamber, internal components and potential leakage positions is established; In the three-dimensional geometric model, the potential leakage positions are set as leak hole units, and equivalent molecular flux boundary conditions are applied to the leak hole units according to the water vapor external leak rate, to obtain a finite element model including leak rate settings; Step S3. Simulate the water vapor pumping process In the finite element model, a water vapor adsorption-desorption kinetics equation is introduced, which includes: . Surface adsorption energy Relationship with surface coverage Relationship with surface coverage ; wherein, is the initial adsorption energy, is a proportionality coefficient characterizing the degree of surface heterogeneity; i. residence time of adsorbed molecules Arrhenius relationship with surface adsorption energy Arrhenius relationship with surface adsorption energy ; wherein, is the frequency of the intrinsic molecular oscillation, is the gas constant, is the thermodynamic temperature; ii. water vapor adsorption flux , desorption flux and surface coverage conservation relation over time t: ; ; ; wherein, is the adhesion coefficient, is the saturation adsorption site density, is the number of adsorbed molecules per unit area, is the incident molecular flux; iv. Incident molecular flux Relationship with water vapor pressure and average molecular thermal velocity : ; Based on the adsorption-desorption kinetics equation, the finite element model is solved to obtain a simulated water vapor pumping curve; Step S4. Calibrate the adsorption kinetics parameters The simulation water vapor pumping curve obtained in step S3 and the experimental water vapor pumping curve obtained in step S1 are matched, and the adhesion coefficient is determined by parameter optimization , saturated adsorption site density , initial adsorption energy and the proportion coefficient representing the degree of surface heterogeneity value; Step S5. Analyze the influence of leak rate on pumping behavior Based on the calibrated adsorption kinetics parameters, the water vapor external leak rate and / or the spatial distribution of the leak hole units are changed in the finite element model, and the change of water vapor pressure with time and the spatial distribution of water vapor pressure under different leak rate conditions are obtained through simulation, to realize quantitative analysis of the influence effect of leak rate.
2. The method of claim 1, wherein the water vapor is introduced into the high vacuum system at a pressure of 10"4 Pa or less. The leak hole units in step S2 are set at positions corresponding to external openings, flange interfaces or instrument connection ports.
3. The method of claim 1, wherein the method is used to analyze the effect of leak rate on water vapor pumping behavior in a high vacuum system. In step S2, the equivalent molecular flux boundary condition is applied by calculating the number of water vapor molecules entering the chamber through the leak hole units per unit time according to the water vapor external leak rate and the equivalent area of the leak hole units, and converting it into the equivalent molecular flux density on the boundary.
4. The method of claim 1, wherein the method is used to analyze the effect of leak rate on water vapor pumping behavior in a high vacuum system. In step S3, the finite element model is solved under quasi-static equilibrium conditions, specifically including: Based on the vacuum pump speed , the chamber volume , the chamber inner surface area A and the average molecular thermal velocity , the quasi-static equilibrium criterion threshold is calculated : ; Computing the instantaneous relative rate of change of water vapor pressure ; When the following condition is satisfied during the pumping process the quasi-static equilibrium condition is used for the solution.
5. The method of claim 1, wherein the method is used to analyze the effect of leak rate on water vapor pumping behavior in a high vacuum system. In step S4, the parameter optimization method is to perform simulation calculation on a plurality of parameter combinations within a preset parameter range, and select the parameter combination that has the best fitting degree of the simulation curve and the experimental curve in the initial pumping stage and the high vacuum stage as the calibration result.
6. The method of claim 1, wherein the method is performed in a high vacuum system. In step S5, the quantitative analysis of the influence effect of leak rate includes: The influence of leak rate size on the ultimate vacuum degree of the system; The influence of leak rate size on the pumping time required to reach the target vacuum degree; The influence of the spatial distribution of the leak hole on the spatial uniformity of the water vapor pressure in the chamber; The influence of the leak hole position on the local vacuum degree of the key process area.
7. The method of claim 1, wherein the method is used to analyze the effect of leak rate on water vapor pumping behavior in a high vacuum system. In step S1, the calculation formula of the water vapor external leak rate Q is: ; wherein, the total external leak rate measured for the static pressure rise experiment, the ambient water vapor pressure, the ambient total pressure.
8. The method of claim 1, wherein the method is used to analyze the effect of leak rate on water vapor pumping behavior in a high vacuum system. In step S1, the internal structure configuration is realized by adjusting the installation combination mode of the louvers, anti-fouling plates, baffles or process tooling in the chamber.
9. The method of analyzing the influence of leak rate on water vapor pumping behavior in a high vacuum system according to any one of claims 1-7, characterized in that, Further comprising step S6: based on the analysis results of step S5, optimizing the sealing design, leak detection strategy or process arrangement scheme of the high vacuum system.
Citation Information
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