Diffusion welding method for CoZrTaB target material

Abstract

The invention provides a diffusion welding method of a CoZrTaB target material, which comprises the following steps: (1) carrying out finish machining on a CoZrTaB target blank to a welding size, and processing a thread on a welding surface of the CoZrTaB target blank by adopting a polycrystalline diamond screwer; (2) first cleaning and PVD titanium film plating are sequentially carried out on the welding face with the machined threads, and a to-be-welded CoZrTaB target blank is obtained; the back plate is subjected to finish machining to the welding size, and a to-be-welded back plate is obtained; and (3) the to-be-welded CoZrTaB target blank and the to-be-welded back plate are sequentially subjected to second cleaning, assembling, sheath welding, high-temperature degassing and diffusion welding, and the diffusion-welded CoZrTaB target material is obtained. According to the diffusion welding method, the polycrystalline diamond screwer is adopted to machine the threads on the welding face of the CoZrTaB target blank, then the titanium film is plated, and the CoZrTaB target material which is high in welding strength and meets the high-temperature sputtering use requirement is obtained.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of target material welding, and particularly relates to a diffusion welding method of a CoZrTaB target material. BACKGROUND

[0002] With the rapid development of the fields of integrated circuits, flat panel displays and optical coating, the demand for high-performance sputtering targets is increasing. CoZrTaB alloy, as a new type of multi-component alloy system, has a broad application prospect in the fields of microelectronic packaging, magnetic storage medium and protective coating due to its excellent amorphous forming ability, high corrosion resistance, good thermal stability and excellent electrical and thermal conductivity. However, CoZrTaB alloy is a high-melting-point, high-hardness magnetic alloy material, which is difficult to process and not easy to diffuse.

[0003] CN108070838A discloses a high-purity CoZrTaB magnetic sputtering target and a preparation method thereof. Three or four kinds of Co powder, Ta powder, ZrB2 powder, B powder and ZrH2 powder are combined to obtain CoZrTaB mixed powder. Co powder, Ta powder and ZrB2 powder are preferentially used for batching. When the ratio cannot be met, B powder or ZrH2 powder is added for supplementation. Then, a CoZrTaB magnetic sputtering target blank is obtained by hot-pressing sintering, and a high-purity CoZrTaB magnetic sputtering target is obtained by finish machining of the finished product. The prepared target has uniform phase organization distribution, a density of ≥99%, a magnetic permeability of 6%~28%, and no internal pores or other defects.

[0004] CN104032276A discloses a soft magnetic target material. A first mode of the soft magnetic target material is composed of an Fe-Co alloy with an atomic ratio of Fe:Co being 100:0~20:80, and the alloy further contains 0.2~5 atomic% of one or two of Al or Cr. In addition, a second mode of the soft magnetic target material is composed of an Fe-Ni alloy with an atomic ratio of Fe:Ni being 100:0~20:80, and the alloy further contains 0.2~5 atomic% of one or two of Al or Cr. In the first and second modes of the soft magnetic target material, the alloy can contain 30 atomic% or less of one or more than two selected from a group consisting of B, Nb, Zr, Ta, Hf, Ti and V.

[0005] CN104451277A discloses a chromium-aluminum alloy target material and a preparation method thereof. The chromium-aluminum alloy target material contains chromium and aluminum as main elements, and at least two of Co, Ti, Ta, W, Nb, Mo, Zr, V, B, Si, Y, La, Ce or Se. The addition of multiple elements can form a composite film layer material in multiple morphologies of nitride, carbide and nitrocarbide. The improved heat treatment process is more conducive to the further densification of the product. The improved powder mixing and degassing process effectively controls the oxygen content.

[0006] However, the above patent method only discloses the preparation method of the CoZrTaB target material, and does not disclose how to weld the CoZrTaB target blank with the back plate and how to prevent the target material from being detached during high-temperature sputtering.

[0007] Therefore, it is of great significance to provide a diffusion welding method for the CoZrTaB target material. SUMMARY

[0008] In view of the problems in the prior art, the present application provides a diffusion welding method for a CoZrTaB target material. The method includes the following steps: machining threads on the welding surface of the CoZrTaB target blank using a polycrystalline diamond threaded cutter, and then performing diffusion welding with the back plate after titanium film plating. The diffusion-welded CoZrTaB target material will not be detached, and the welding strength meets the customer's use requirements.

[0009] To achieve this purpose, the present application adopts the following technical solutions:

[0010] The present application provides a diffusion welding method for a CoZrTaB target material, which includes the following steps:

[0011] (1) The CoZrTaB target blank is finished to the welding size, and a polycrystalline diamond threaded cutter is used to machine threads on the welding surface of the CoZrTaB target blank;

[0012] (2) The welding surface after machining threads is sequentially subjected to first cleaning and PVD titanium film plating to obtain a CoZrTaB target blank to be welded; and the back plate is finished to the welding size to obtain a back plate to be welded;

[0013] (3) The CoZrTaB target blank to be welded and the back plate to be welded are sequentially subjected to second cleaning, assembly, sleeved welding, high-temperature degassing and diffusion welding to obtain a diffusion-welded CoZrTaB target material.

[0014] The diffusion welding method of the CoZrTaB target material provided by the application is characterized in that, in view of the fact that the CoZrTaB target blank is difficult to process and is not easy to diffuse, a poly-crystal diamond threaded tool is used to process threads on the welding surface of the CoZrTaB target blank, the poly-crystal diamond threaded tool has higher hardness and better wear resistance than a hard alloy threaded tool, and a higher-precision threaded surface can be processed; the existence of the threaded surface can significantly increase the actual contact area of the target blank and the back plate, thereby improving the bonding strength of the welding interface, the concave-convex structure of the threads can disperse the thermal stress generated during the welding process, reduce the local stress concentration caused by the difference in the thermal expansion coefficient, and reduce the risk of cracking or deformation; then, the welding surface after the threads are processed is sequentially subjected to first cleaning and oil removal, titanium film is plated by using PVD, the success rate of diffusion welding and the interface performance can be significantly improved, and the target material after diffusion welding meets the use requirements at high temperatures.

[0015] The present application does not make detailed limitation on the finish machining of the CoZrTaB target blank and the finish machining of the back plate, and the target blank and the back plate can be machined to the welding size by using the existing finish machining method.

[0016] The present application does not make detailed limitation on the first cleaning, and the oil stains on the welding surface after the threads are processed can be removed by using the existing cleaning liquid and cleaning method. The present application does not make detailed limitation on the second cleaning, and the pollutants introduced during the plating process can be removed by using the existing cleaning liquid and cleaning method. The first cleaning and the second cleaning of the present application are both followed by drying.

[0017] Preferably, the feed speed of the poly-crystal diamond threaded tool in step (1) is 50-150 m / min, for example, it can be 50 m / min, 55 m / min, 60 m / min, 70 m / min, 80 m / min, 100 m / min, 120 m / min, 140 m / min or 150 m / min, etc., but is not limited to the listed values, and other values not listed in this range are also applicable.

[0018] The feed amount is 0.02-0.05 mm / z, for example, it can be 0.02 mm / z, 0.025 mm / z, 0.03 mm / z, 0.035 mm / z, 0.04 mm / z, 0.045 mm / z or 0.05 mm / z, etc., but is not limited to the listed values, and other values not listed in this range are also applicable.

[0019] Preferably, the feed speed of the poly-crystal diamond threaded tool in the present application is 50-150 m / min, if the feed speed is too low, the processing time will be prolonged, the friction heat between the tool and the target blank will be increased, and local thermal damage of the target blank will be caused; if the feed speed is too high, the cutting force will be increased, vibration or chatter will be easily generated, the roughness of the threaded surface will be deteriorated, and the interface bonding strength of the subsequent coating or welding will be affected.

[0020] Preferably, the surface roughness of the thread processed by the welding surface in step (1) is 0.5-1 μm, for example, it can be 0.5 μm, 0.55 μm, 0.6 μm, 0.65 μm, 0.7 μm, 0.8 μm or 1 μm, etc., but not limited to the listed values, other values not listed in the range are also applicable.

[0021] The thread depth is 0.08-0.17 mm, for example, it can be 0.08 mm, 0.085 mm, 0.09 mm, 0.1 mm, 0.13 mm, 0.15 mm or 0.17 mm, etc., but not limited to the listed values, other values not listed in the range are also applicable.

[0022] The pitch is 0.15-0.25 mm, for example, it can be 0.15 mm, 0.17 mm, 0.2 mm, 0.22 mm, 0.23 mm, 0.24 mm or 0.25 mm, etc., but not limited to the listed values, other values not listed in the range are also applicable.

[0023] Preferably, the thickness of the titanium film in step (2) is 1-2 μm, for example, it can be 1 μm, 1.2 μm, 1.4 μm, 1.5 μm, 1.7 μm, 1.9 μm or 2 μm, etc., but not limited to the listed values, other values not listed in the range are also applicable.

[0024] Preferably, the thickness of the titanium film in the present application is 1-2 μm, if the titanium film is too thin, it cannot completely cover the thread surface defects; if the titanium film is too thick, it hinders the close contact during diffusion welding, thereby affecting the quality of diffusion welding.

[0025] Preferably, the back plate in step (2) comprises a copper alloy back plate.

[0026] Preferably, the material of the cladding in step (3) comprises 304 stainless steel.

[0027] Preferably, the temperature of the high-temperature degassing in step (3) is 200-300℃, for example, it can be 200℃, 210℃, 230℃, 250℃, 270℃, 290℃ or 300℃, etc., but not limited to the listed values, other values not listed in the range are also applicable.

[0028] The time is 2-5 h, for example, it can be 2 h, 2.5 h, 3 h, 3.5 h, 4 h, 4.5 h or 5 h, etc., but not limited to the listed values, other values not listed in the range are also applicable.

[0029] Preferably, the diffusion welding in step (3) is at a temperature of 400-550 DEG C, for example, it can be 400 DEG C, 420 DEG C, 450 DEG C, 480 DEG C, 500 DEG C, 520 DEG C or 550 DEG C, but not limited to the listed values, other values not listed in the range are also applicable.

[0030] Preferably, the diffusion welding in step (3) is at a temperature of 400-550 DEG C, for example, it can be 400 DEG C, 420 DEG C, 450 DEG C, 480 DEG C, 500 DEG C, 520 DEG C or 550 DEG C, but not limited to the listed values, other values not listed in the range are also applicable.

[0031] Preferably, the diffusion welding in step (3) is at a pressure of 80-900 MPa, for example, it can be 80 MPa, 90 MPa, 100 MPa, 300 MPa, 500 MPa, 700 MPa or 900 MPa, but not limited to the listed values, other values not listed in the range are also applicable.

[0032] Preferably, the diffusion welding in step (3) is at a pressure of 80-900 MPa, for example, it can be 80 MPa, 90 MPa, 100 MPa, 300 MPa, 500 MPa, 700 MPa or 900 MPa, but not limited to the listed values, other values not listed in the range are also applicable.

[0033] As a preferred technical solution of the present application, the diffusion welding method comprises the following steps:

[0034] (1) CoZrTaB target blank is finished to the welding size, and a poly crystalline diamond threaded tool is used to process threads on the welding surface of the CoZrTaB target blank;

[0035] The feed speed of the poly crystalline diamond threaded tool is 50-150 m / min, and the feed amount is 0.02-0.05 mm / z; the surface roughness of the threads processed on the welding surface is 0.5-1 μm, the thread depth is 0.08-0.17 mm, and the thread pitch is 0.15-0.25 mm;

[0036] (2) the welding surface after processing threads is sequentially subjected to first cleaning and PVD to deposit a titanium film with a thickness of 1-2 μm to obtain a CoZrTaB target blank to be welded; a copper alloy back plate is finished to the welding size to obtain a back plate to be welded;

[0037] (3) the CoZrTaB target blank to be welded and the back plate to be welded are sequentially subjected to second cleaning, assembly, pack welding, high-temperature degassing at a temperature of 200-300 DEG C for 2-5 h, and diffusion welding at a temperature of 400-550 DEG C and a pressure of 80-900 MPa for 3-5 h to obtain a CoZrTaB target material after diffusion welding;

[0038] The material of the sleeve in the sleeve welding includes 304 stainless steel.

[0039] Compared with the prior art, the present application has at least the following beneficial effects:

[0040] The diffusion welding method of the CoZrTaB target provided by the present application greatly improves the welding strength of the target blank and the back plate by processing threads and titanium film on the welding surface of the CoZrTaB target blank, and the CoZrTaB target is not cracked after diffusion welding, and will not be de-welded during high-temperature sputtering use, meeting the actual use requirements. BRIEF DESCRIPTION OF DRAWINGS

[0041] Figure 1 is a flowchart of the diffusion welding method of the CoZrTaB target provided by Embodiment 1 of the present application. DETAILED DESCRIPTION

[0042] The technical solutions of the present application will be further described below in combination with the drawings and through specific embodiments.

[0043] The present application will be further described below in detail. However, the following examples are only simple examples of the present application, and do not represent or limit the protection scope of the present application, and the protection scope of the present application is subject to the claims.

[0044] Embodiment 1

[0045] The present embodiment provides a diffusion welding method of a CoZrTaB target, and a flowchart thereof is shown in Figure 1 The diffusion welding method comprises the following steps:

[0046] (1) The CoZrTaB target blank is finished to the welding size, and a poly crystalline diamond thread cutter is used to process threads on the welding surface of the CoZrTaB target blank;

[0047] The feed speed of the poly crystalline diamond thread cutter is 110 m / min, and the feed amount is 0.025 mm / z; the surface roughness of the threads processed on the welding surface is 0.58 μm, the thread depth is 0.1 mm, and the thread pitch is 0.2 mm;

[0048] (2) The welding surface after processing threads is sequentially subjected to first cleaning and PVD to coat a titanium film with a thickness of 1.2 μm to obtain a CoZrTaB target blank to be welded; and a copper alloy back plate is finished to the welding size to obtain a back plate to be welded;

[0049] (3) the CoZrTaB target blank to be welded and the backing plate to be welded are sequentially subjected to second cleaning, assembly, sleeved welding, high-temperature degassing at a temperature of 260°C for 2.5h, and diffusion welding at a temperature of 480°C and a pressure of 200MPa for 3.5h, to obtain the diffusion-welded CoZrTaB target material; the material of the sleeve in the sleeved welding is 304 stainless steel.

[0050] Example 2

[0051] The present embodiment provides a diffusion welding method of a CoZrTaB target material, which comprises the following steps:

[0052] (1) the CoZrTaB target blank is finished to a welding size, and a poly-crystal diamond threaded cutter is used to process threads on the welding surface of the CoZrTaB target blank;

[0053] The feed speed of the poly-crystal diamond threaded cutter is 50m / min, and the feed amount is 0.05mm / z; the surface roughness of the threads processed on the welding surface is 1μm, the thread depth is 0.17mm, and the thread pitch is 0.15mm;

[0054] (2) the welding surface after the threads are processed is sequentially subjected to first cleaning and PVD plating of a titanium film with a thickness of 2μm, to obtain the CoZrTaB target blank to be welded; a copper alloy backing plate is finished to a welding size, to obtain the backing plate to be welded;

[0055] (3) the CoZrTaB target blank to be welded and the backing plate to be welded are sequentially subjected to second cleaning, assembly, sleeved welding, high-temperature degassing at a temperature of 200°C for 5h, and diffusion welding at a temperature of 550°C and a pressure of 80MPa for 5h, to obtain the diffusion-welded CoZrTaB target material; the material of the sleeve in the sleeved welding is 304 stainless steel.

[0056] Example 3

[0057] The present embodiment provides a diffusion welding method of a CoZrTaB target material, which comprises the following steps:

[0058] (1) the CoZrTaB target blank is finished to a welding size, and a poly-crystal diamond threaded cutter is used to process threads on the welding surface of the CoZrTaB target blank;

[0059] The feed speed of the poly-crystal diamond threaded cutter is 150m / min, and the feed amount is 0.02mm / z; the surface roughness of the threads processed on the welding surface is 1μm, the thread depth is 0.08mm, and the thread pitch is 0.25mm;

[0060] (2) the welding surface after processing thread is sequentially subjected to first cleaning and PVD plating of titanium film with a thickness of 1 μm, to obtain a CoZrTaB target blank to be welded; a copper alloy back plate is finished to a welding size, to obtain a back plate to be welded;

[0061] (3) the CoZrTaB target blank to be welded and the back plate to be welded are sequentially subjected to second cleaning, assembly, sleeved welding, high-temperature degassing at a temperature of 300 ℃ for 2 h, and diffusion welding at a temperature of 400 ℃ and a pressure of 900 MPa for 3 h, to obtain a CoZrTaB target material after diffusion welding; the material of the sleeve in the sleeved welding is 304 stainless steel.

[0062] Example 4

[0063] The embodiment provides a diffusion welding method of a CoZrTaB target material, and the diffusion welding method comprises the following steps:

[0064] (1) a CoZrTaB target blank is finished to a welding size, and a poly-crystal diamond thread tool is used to process thread on a welding surface of the CoZrTaB target blank;

[0065] The feed speed of the poly-crystal diamond thread tool is 80 m / min, and the feed amount is 0.033 mm / z; the surface roughness of the thread processed on the welding surface is 0.62 μm, the thread depth is 0.09 mm, and the pitch is 0.19 mm;

[0066] (2) the welding surface after processing thread is sequentially subjected to first cleaning and PVD plating of titanium film with a thickness of 1.4 μm, to obtain a CoZrTaB target blank to be welded; a copper alloy back plate is finished to a welding size, to obtain a back plate to be welded;

[0067] (3) the CoZrTaB target blank to be welded and the back plate to be welded are sequentially subjected to second cleaning, assembly, sleeved welding, high-temperature degassing at a temperature of 220 ℃ for 3.3 h, and diffusion welding at a temperature of 510 ℃ and a pressure of 420 MPa for 4.6 h, to obtain a CoZrTaB target material after diffusion welding; the material of the sleeve in the sleeved welding is 304 stainless steel.

[0068] It can be seen from the combination of Examples 1 to 4 that the diffusion welding method of the CoZrTaB target material provided by the application is simple in operation, the welding strength of the target blank and the back plate is greatly improved by processing thread and plating titanium film on the welding surface of the CoZrTaB target blank, the welding strength of the CoZrTaB target material after diffusion welding can reach 50 to 80 MPa, the high-temperature sputtering use requirement is met, and the target material will not be de-welded.

[0069] Example 5

[0070] The embodiment provides a diffusion welding method of a CoZrTaB target material, which is same as that in the embodiment 1 except that the feed speed of the poly crystalline diamond threaded tool is 40 m / min.

[0071] Embodiment 6

[0072] The embodiment provides a diffusion welding method of a CoZrTaB target material, which is same as that in the embodiment 1 except that the feed speed of the poly crystalline diamond threaded tool is 160 m / min.

[0073] It can be seen from the combination of the embodiment 1 and the embodiments 5-6 that the feed speed is too low in the embodiment 5, the machining time is prolonged, the friction heat of the tool and the target blank is increased, and local thermal damage of the target blank is caused; the feed speed is too high in the embodiment 6, the cutting force is increased, vibration or chatter is prone to be generated, and the roughness of the threaded surface is deteriorated, thereby affecting the interface bonding strength of the subsequent plated layer or welding.

[0074] Embodiment 7

[0075] The embodiment provides a diffusion welding method of a CoZrTaB target material, which is same as that in the embodiment 1 except that the thickness of the titanium film is 0.5 μm.

[0076] Embodiment 8

[0077] The embodiment provides a diffusion welding method of a CoZrTaB target material, which is same as that in the embodiment 1 except that the thickness of the titanium film is 3 μm.

[0078] It can be seen from the combination of the embodiment 1 and the embodiments 7-8 that the titanium film is too thin in the embodiment 7, the threaded surface defects cannot be completely covered, and the welding strength of the CoZrTaB target material obtained after diffusion welding is reduced; the titanium film is too thick in the embodiment 8, the close contact during diffusion welding is hindered, and the quality of the diffusion welding is affected.

[0079] Comparative Example 1

[0080] The comparative example provides a diffusion welding method of a CoZrTaB target material, which is same as that in the embodiment 1 except that a hard alloy threaded tool is used to process the threads on the welding surface of the CoZrTaB target blank.

[0081] Since the hard alloy threaded tool is used to process the threads on the welding surface of the CoZrTaB target blank in the comparative example, the hardness of the tool is low, the wear resistance is poor, the precision and roughness of the threaded surface obtained by processing are poor, the welding strength of the CoZrTaB target material obtained after diffusion welding is reduced, and cracking occurs during the high-temperature sputtering use.

[0082] Comparative Example 2

[0083] The comparative example provides a diffusion welding method of CoZrTaB target material, which is the same as example 1 except that step (2) does not perform PVD titanium plating film.

[0084] The comparative example does not have a titanium plating film on the welded surface after machining threads, which can result in poor diffusion welding effect, and the welding strength of the CoZrTaB target material after diffusion welding is reduced, and cracking occurs during high-temperature sputtering use.

[0085] In summary, the diffusion welding method of the CoZrTaB target material provided by the present application uses a polycrystalline diamond thread cutter to machine threads and plating titanium film on the welded surface of the CoZrTaB target blank, which greatly improves the welding strength of the target blank and the back plate, and the CoZrTaB target material after diffusion welding does not crack, and does not weld off during high-temperature sputtering use, which meets the actual use requirements and is suitable for wide range of popularization and application.

[0086] The applicant declares that the above is only a specific embodiment of the present application, but the protection scope of the present application is not limited thereto, and those skilled in the art should understand that any changes or replacements within the technical scope disclosed by the present application can be easily thought of by any person skilled in the art, and all fall within the protection scope and disclosure scope of the present application.

Claims

1. A diffusion welding method of a CoZrTaB target material, characterized by, The diffusion welding method comprises the following steps: (1) CoZrTaB target blank is finished to welding size, and a poly crystalline diamond thread tool is used to process threads on the welding surface of the CoZrTaB target blank; (2) the welding surface after the threads are processed is sequentially subjected to first cleaning and PVD titanium film plating to obtain a CoZrTaB target blank to be welded; a back plate is finished to welding size to obtain a back plate to be welded; (3) the CoZrTaB target blank to be welded and the back plate to be welded are sequentially subjected to second cleaning, assembly, sleeved welding, high-temperature degassing at a temperature of 200-300 DEG C for 2-5 hours and diffusion welding at a temperature of 400-550 DEG C and a pressure of 80-900 MPa for 3-5 hours to obtain a CoZrTaB target material after diffusion welding.

2. The diffusion welding method according to claim 1, characterized by, In step (1), the feed speed of the poly crystalline diamond thread tool is 50-150 m / min, and the feed amount is 0.02-0.05 mm / z.

3. Diffusion welding method according to claim 1 or 2, characterized in that In step (1), the surface roughness of the threads processed on the welding surface is 0.5-1 μm, the thread depth is 0.08-0.17 mm, and the thread pitch is 0.15-0.25 mm.

4. The diffusion welding method according to any one of claims 1 to 3, characterized by In step (2), the thickness of the titanium film is 1-2 μm.

5. The diffusion welding method according to any one of claims 1 to 4, characterized in that, In step (2), the back plate comprises a copper alloy back plate.

6. The diffusion welding method according to any one of claims 1 to 5, characterized by In step (3), the material of the sleeve in the sleeved welding comprises 304 stainless steel.

7. The diffusion welding method according to any one of claims 1 to 6, characterized by In step (3), the temperature of the high-temperature degassing is 200-300 DEG C, and the time is 2-5 hours.

8. The diffusion welding method according to any one of claims 1 to 7, characterized by In step (3), the temperature of the diffusion welding is 400-550 DEG C.

9. The diffusion welding method according to any one of claims 1 to 8, characterized by, In step (3), the pressure of the diffusion welding is 80-900 MPa, and the time is 3-5 hours.

10. The diffusion welding method according to any one of claims 1 to 9, characterized by The diffusion welding method comprises the following steps: (1) CoZrTaB target blank is finished to welding size, and a poly crystalline diamond thread tool is used to process threads on the welding surface of the CoZrTaB target blank; In step (1), the feed speed of the poly crystalline diamond thread tool is 50-150 m / min, and the feed amount is 0.02-0.05 mm / z; the surface roughness of the threads processed on the welding surface is 0.5-1 μm, the thread depth is 0.08-0.17 mm, and the thread pitch is 0.15-0.25 mm; (2) the welding surface after the threads are processed is sequentially subjected to first cleaning and PVD titanium film plating to obtain a CoZrTaB target blank to be welded; a back plate is finished to welding size to obtain a back plate to be welded; (3) the CoZrTaB target blank to be welded and the back plate to be welded are sequentially subjected to second cleaning, assembly, sleeved welding, high-temperature degassing at a temperature of 200-300 DEG C for 2-5 hours and diffusion welding at a temperature of 400-550 DEG C and a pressure of 80-900 MPa for 3-5 hours to obtain a CoZrTaB target material after diffusion welding. In step (3), the material of the sleeve in the sleeved welding comprises 304 stainless steel.

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