Current stabilization module for semiconductor equipment and use method of current stabilization module
By designing a current stabilization module in semiconductor devices and utilizing the tortuous structure of the rectifier channel to convert turbulent flow into laminar flow, the problem of uneven gas distribution is solved, improving thin film uniformity and device performance. This method is applicable to a variety of semiconductor devices.
Patent Information
- Application Number
- CN202511540513.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-27
- Publication Date
- 2026-01-23
AI Technical Summary
In existing semiconductor process equipment, the connection method between the gas introduction component and the reaction chamber cannot effectively suppress turbulence, resulting in uneven gas distribution in the reaction chamber, affecting film thickness and composition uniformity, and thus affecting chip yield and performance.
Design a flow stabilization module, which includes a shell and symmetrically arranged inlet and outlet interfaces, connected by a tortuous rectifier channel. The rectifier channel has a Z-shaped or S-shaped structure to increase the flow path resistance, convert turbulent flow into laminar flow, and ensure uniform gas distribution.
It improves the uniformity of gas distribution in the reaction chamber, enhances thin film uniformity, reduces thin film thickness deviation, and improves the electrical performance stability of semiconductor devices. It is applicable to a variety of semiconductor process equipment, requires no large-scale modification, and reduces costs.
Smart Images
Figure CN121380909A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application belongs to the technical field of semiconductor equipment, and particularly relates to a current stabilizing module for a semiconductor equipment and a use method thereof. BACKGROUND
[0002] In a semiconductor process, the thin film preparation (such as chemical vapor deposition, atomic layer deposition, etc.) has a very high requirement for the gas flow uniformity in the reaction chamber. The flow state (turbulent flow or laminar flow) of the gas flow directly affects the distribution uniformity of the reaction gas on the substrate surface, and further determines the thickness consistency, composition uniformity and electrical performance of the thin film. When the inlet gas flow enters the reaction chamber in a turbulent flow state, local vortex, concentration gradient fluctuation and other phenomena are easily formed, which leads to the difference in reaction rate of different areas of the substrate, and finally affects the yield and performance of the chip. At present, the gas insert is used to introduce the reaction gas into the reaction chamber, which is the mainstream way, but the gas outlet state of the small hole of the gas insert may still form turbulent flow due to the gas pressure fluctuation, pipeline disturbance and other factors, and therefore a special current stabilizing structure needs to be arranged between the gas insert and the chamber to adjust the turbulent flow to laminar flow and improve the process stability.
[0003] In the existing semiconductor process equipment, the gas insert is usually directly communicated with the reaction chamber, or is connected only through a simple straight passage. After the gas flows out of the small hole of the gas insert, it directly enters the chamber to participate in the reaction. Some equipment will set a multi-hole baffle at the outlet of the gas insert to try to reduce the disturbance of the gas flow through the pore resistance, but the hole of the baffle is mostly a straight hole or a simple grid structure, and the effect of suppressing the turbulent flow is limited, and it is difficult to adjust the gas flow to a laminar flow state.
[0004] The direct communication or straight passage connection between the gas insert and the reaction chamber cannot effectively suppress the turbulent flow, and the gas entering the reaction chamber is easy to form vortex and cause uneven concentration of the reactants, which finally leads to significant differences in the thickness and composition of the thin film.
[0005] The simple structure of the multi-hole baffle has insufficient rectification effect on the gas flow, the straight hole or grid channel cannot produce a sustained resistance adjustment effect through path optimization, the improvement of the turbulent flow state is limited, and it is still difficult to meet the requirement of the gas flow uniformity for high-precision thin film preparation. SUMMARY
[0006] Based on the technical problems existing in the prior art, the present application provides a current stabilizing module for a semiconductor equipment and a use method thereof.
[0007] In order to achieve the above object, the first aspect of the present application provides a current stabilizing module for semiconductor equipment, comprising a shell, a plurality of gas inlet interfaces are uniformly arranged on one side of the shell, a plurality of gas outlet interfaces are symmetrically arranged on the other side of the shell, the number of the plurality of gas inlet interfaces is the same as that of the plurality of gas outlet interfaces, the plurality of gas inlet interfaces and the plurality of gas outlet interfaces correspond to each other one by one, and the plurality of gas inlet interfaces and the plurality of gas outlet interfaces are connected through meandering rectifying channels.
[0008] Further improvement of the present application is that the rectifying channels are symmetrically in the shape of a U or S.
[0009] Further improvement of the present application is that the convex / concave direction of the rectifying channels is vertical or horizontal.
[0010] Further improvement of the present application is that each of the rectifying channels comprises a first segment, a second segment and a third segment arranged in sequence, the first segment and the third segment are horizontally arranged, and the second segment is an upwardly inclined slope segment.
[0011] Further improvement of the present application is that the cross section of the rectifying channels is hexagonal, and the cross sections of adjacent rectifying channels form a honeycomb structure.
[0012] Further improvement of the present application is that the length of the rectifying channels is greater than one and a half times the width of the shell.
[0013] Further improvement of the present application is that the length of the rectifying channels is greater than two times the width of the shell.
[0014] Further improvement of the present application is that the rectifying channels comprise a plurality of straight segments and a plurality of bending segments.
[0015] Further improvement of the present application is that the bending angle of the bending segments is greater than or equal to ninety degrees.
[0016] The second aspect of the present application provides a use method of the current stabilizing module for semiconductor equipment, based on the above-mentioned current stabilizing module for semiconductor equipment, comprising the following steps: The current stabilizing module is arranged between a gas introduction assembly and a reaction chamber, so that the gas in the gas introduction assembly flows into the plurality of rectifying channels from the plurality of gas inlet interfaces, and the gas in the plurality of rectifying channels flows into the reaction chamber from the plurality of gas outlet interfaces. After the gas flows into the plurality of gas inlet interfaces, it flows through the meandering rectifying channels and then flows into the reaction chamber from the plurality of gas outlet interfaces.
[0017] The above technical solution has the following beneficial technical effects: The application is connected with the several gas inlet interfaces and the gas outlet of the gas guide assembly, the several gas outlet interfaces and the gas inlet of the reaction chamber, the turbulent gas in the gas guide assembly is introduced into the rectifying channel through the several gas inlet interfaces, the gas flow in the turbulent state is stably changed into the laminar state through the bent rectifying channel, and the gas flow in the laminar state is introduced into the reaction chamber through the several gas outlet interfaces, so that the uniformity of the gas distribution in the reaction chamber is improved, and the problem of insufficient uniformity of the film in the reaction chamber caused by the flow disturbance is solved. BRIEF DESCRIPTION OF DRAWINGS
[0018] The accompanying drawings are used to better understand the application, and do not constitute undue limitations on the application. Among them: Figure 1 is a structural schematic diagram of the rectifying channel in the current stabilizing module for semiconductor equipment when the protrusion / recess is vertically arranged; Figure 2 is a sectional view of the rectifying channel in the current stabilizing module for semiconductor equipment when the protrusion / recess is vertically arranged; Figure 3 is a top view of the rectifying channel in the current stabilizing module for semiconductor equipment when the protrusion / recess is vertically arranged; Figure 4 is a top view of the rectifying channel in the current stabilizing module for semiconductor equipment when the protrusion / recess is horizontally arranged; Figure 5 is a longitudinal section Reynolds number distribution diagram of the wafer center position in the current stabilizing module embodiment 1 of the current stabilizing module for semiconductor equipment when the stabilizing module is not arranged; Figure 6 is a longitudinal section Reynolds number distribution diagram of the wafer center position in the current stabilizing module embodiment 1 of the current stabilizing module for semiconductor equipment when the protrusion / recess of the rectifying channel is horizontally arranged; Figure 7 is a longitudinal section Reynolds number distribution diagram of the wafer center position in the current stabilizing module embodiment 1 of the current stabilizing module for semiconductor equipment when the protrusion / recess of the rectifying channel is vertically arranged; Figure 8 is a structural schematic diagram of the rectifying channel in the current stabilizing module for semiconductor equipment when the three-section rectifying channel is adopted; Figure 9 is a schematic diagram of the hexagonal rectifying channel in the current stabilizing module for semiconductor equipment.
[0019] In the figure: 1, shell; 2, gas inlet interface; 3, gas outlet interface; 4, rectifying channel; 401, first section; 402, second section; 403, third section. DETAILED DESCRIPTION
[0020] The following description, in conjunction with the accompanying drawings, illustrates exemplary embodiments of the present invention, including various details to aid understanding. These details should be considered merely exemplary. Therefore, those skilled in the art will recognize that various changes and modifications can be made to the embodiments described herein without departing from the scope and spirit of the invention. Similarly, for clarity and brevity, descriptions of well-known functions and structures are omitted in the following description.
[0021] Example One A current stabilizing module for semiconductor devices, such as Figures 1-3 As shown, the device includes a shell 1, several inlet ports 2, several outlet ports 3, and several rectifier channels 4. The shell 1 is a hollow, sealed container. Two symmetrical side walls of the shell 1 have the same number of inlet ports 2 and outlet ports 3, respectively. The inlet ports 2 and outlet ports 3 correspond one-to-one and are connected by a tortuous rectifier channel 4. The inlet ports 2 are connected to the outlets of the gas inlet assembly, and the outlet ports 3 are connected to the inlets of the reaction chamber. Turbulent gas from the gas inlet assembly is introduced into the rectifier channels 4 through the inlet ports 2. The tortuous rectifier channels 4 stabilize the turbulent airflow into a laminar flow state. The laminar flow then enters the reaction chamber through the outlet ports 3, thereby improving the uniformity of gas distribution within the reaction chamber and solving the problem of insufficient film uniformity caused by airflow disturbance. The shell 1 protects the rectifier channels 4 and also serves as heat insulation. The sides of the plurality of air inlet ports 2 and the plurality of air outlet ports 3 are planes formed by the length and height of the outer shell 1. The length of the outer shell 1 matches the distribution range of the air outlets of the gas inlet assembly, thereby ensuring that the gas discharged from each air outlet of the gas inlet assembly can enter the rectifier channel 4 to suppress turbulence.
[0022] Specifically, the rectifier channel 4 has a symmetrical Z-shaped structure or a symmetrical S-shaped structure, such as... Figure 2As shown, the rectifying channel 4 is a symmetrical structure. Due to the uneven gas outlet speed of the gas inlet assembly, the output gas flow is turbulent. When the turbulent flow enters the rectifying channel 4 through the gas inlet end interface 2, the zigzag or S-shaped structure generates resistance (friction resistance and vortex loss at the bending part) along the non-linear path, so that the kinetic energy of the gas flow is consumed, the disturbance energy is attenuated, and the Reynolds number of the turbulent gas flow through the rectifying channel 4 is reduced, and the stable laminar flow is converted into the reaction chamber through the gas outlet end interface 3. Through the structural design of the "zigzag" or "s-shaped" rectifying channel 4, the flow path of the gas in the module is prolonged and the flow resistance is increased, and the "path damping effect" in fluid mechanics is used to force the turbulent gas flow to be converted into laminar flow. At the same time, the symmetrical design of the rectifying channel 4 ensures that the gas at different positions can be uniformly gathered, avoiding uneven gas distribution caused by path differences, and finally achieving uniformity of gas flow rate and concentration into the reaction chamber.
[0023] Specifically, the convex / concave direction of the rectifying channel 4 is arbitrary, but is preferably vertical or horizontal, such as Figures 5-7 As shown, when the steady flow module in this embodiment is not set, the Reynolds number range of the wafer center position section in the reaction chamber is about 7.712526-6.476896, when the convex / concave direction of the rectifying channel 4 is horizontal, the Reynolds number range of the wafer center position section in the reaction chamber is about 7.59761-5.972983, and when the convex / concave direction of the rectifying channel 4 is vertical, the Reynolds number range of the wafer center position section in the reaction chamber is about 7.4362-6.41228. The smaller the Reynolds number, the more gentle the flow in the reaction chamber, which is more conducive to wafer processing in the reaction chamber. Therefore, according to the Reynolds number in different settings, the smaller the Reynolds number, the more conducive to wafer processing in the reaction chamber. The convex / concave direction of the rectifying channel 4 is preferably vertical, and the remaining setting modes (such as horizontal direction or honeycomb structure, etc.) can also effectively reduce the Reynolds number, which can be selected under special working conditions.
[0024] Specifically, the shell 1 is made of high-temperature-resistant material, such as quartz material. The shell 1 is preferably a flat cuboid structure. The width of the shell 1 is slightly smaller than the size of the gas inlet of the reaction chamber, so that a sealing assembly can be arranged between the side of the shell 1 where the gas outlet end interfaces 3 are arranged and the reaction chamber. The sealing assembly is usually a sealing ring. The shell 1 is also connected to the gas inlet assembly through a sealing ring.
[0025] Specifically, the number, aperture and position distribution of the plurality of gas inlet interfaces 2 correspond to the gas outlets on the gas introduction assembly one by one, thereby ensuring that all the gas flowing out of the gas introduction assembly is introduced into the plurality of rectifying channels 4, and the sealing ring is used for airtight connection between the two. The number, aperture and position distribution of the plurality of gas outlet interfaces 3 correspond to the gas outlets on the reaction chamber one by one, thereby ensuring that all the gas flowing out of the plurality of rectifying channels 4 is introduced into the reaction chamber, and the sealing ring is used for airtight connection between the two.
[0026] Specifically, the length of the rectifying channel 4 is greater than twice the width of the shell 1, the rectifying channel 4 includes a plurality of linear segments and a plurality of bending segments, and the bending angle of the bending segment is greater than or equal to ninety degrees. By controlling the length of the plurality of rectifying channels 4, it is ensured that the gas flow flowing through the rectifying channel 4 receives sufficient friction. By controlling the number and bending angle of the bending segment, the local resistance (vortex loss at the bending position) of the gas flow flowing through the plurality of rectifying channels 4 is increased. The combined local resistance and friction weaken the turbulent flow of the gas flow to a laminar flow, thereby providing uniform and smooth gas flow to the reaction chamber and ensuring the quality of the wafer / plating film. The at least two linear segments included in the rectifying channel 4 are respectively connected to the gas inlet interface 2 and the gas outlet interface 3 of the rectifying channel 4, ensuring smooth gas flow. The number and angle of the bending segment are adjusted according to the input turbulent flow.
[0027] Specifically, as shown in Figures 8-9 In addition to the above S-shaped or U-shaped arrangement, the cross section of the rectifying channel 4 can also be hexagonal, so that the cross sections of adjacent rectifying channels 4 form a honeycomb structure. At this time, as shown in Figure 8 Each of the rectifying channels 4 includes a first segment 401, a second segment 402 and a third segment 403 arranged in sequence, the first segment 401 and the third segment 403 are horizontally arranged, and the second segment 402 is an inclined upward slope. The length of the rectifying channel 4 is greater than one and a half times the width of the shell 1. By arranging the rectifying channel 4 with a hexagonal cross section, the contact area with the gas is effectively increased, and the along-the-way resistance of the gas flow through the rectifying channel 4 is better utilized to improve the turbulent flow. The rectifying channel 4 is arranged in a three-segment structure, i.e. straight-inclined-upward-straight structure, which can prolong the gas flow distance and adjust the flow state. When the rectifying channel 4 as shown in Figure 8 The cross section of the entire flow stabilizing module is in a honeycomb structure as shown in Figure 9 which can make the best use of space. When this structure is used, the length of the rectifying channel 4 is appropriately reduced, and the length of the rectifying channel 4 is preferably greater than one and a half times the width of the shell 1.
[0028] Example Two A method for using a current stabilizing module for semiconductor equipment based on the current stabilizing module for semiconductor equipment of embodiment 1, comprising the following steps: Setting the current stabilizing module between the gas introduction assembly and the reaction chamber, so that the gas in the gas introduction assembly flows from the plurality of gas inlet interfaces 2 to the plurality of rectifying channels 4, and the gas in the plurality of rectifying channels 4 flows from the plurality of gas outlet interfaces 3 to the reaction chamber; After the gas flows into the plurality of gas inlet interfaces 2, it flows through the zigzag rectifying channels 4 and then flows from the plurality of gas outlet interfaces 3 to the reaction chamber.
[0029] The several gas inlet interfaces 2 are used to connect with the gas outlets of the gas introduction assembly, and the several gas outlet interfaces 3 are used to connect with the gas inlets of the reaction chamber. The turbulent gas in the gas introduction assembly is introduced into the rectifying channel 4 through the several gas inlet interfaces 2. The turbulent gas flow is stabilized to be in a laminar flow state through the bent rectifying channel 4. The gas flow in the laminar flow state is introduced into the reaction chamber through the several gas outlet interfaces 3, so as to improve the uniformity of the gas distribution in the reaction chamber and solve the problem of insufficient uniformity of the film in the reaction chamber caused by the disturbance of the gas flow. The shell 1 is used to protect the rectifying channel 4 and simultaneously plays a role of heat insulation. The side surface for arranging the several gas inlet interfaces 2 and the several gas outlet interfaces 3 is a plane composed of the length and the height of the shell 1. The length of the shell 1 is matched with the distribution range of the gas outlets of the gas introduction assembly, so as to ensure that the gas discharged from each gas outlet of the gas introduction assembly can enter the rectifying channel 4 to suppress the turbulent flow. Through the special structure of the “U-shaped” or “S-shaped” channel, the turbulent gas flow is rectified to be in a laminar flow by using the continuous flow resistance caused by the path lengthening. Compared with the existing straight channel or simple porous baffle, the disturbance of the gas flow is suppressed, the local vortex and the concentration fluctuation are effectively eliminated, and the uniform distribution of the reaction gas in the reaction chamber is ensured. The improvement of the uniformity of the gas flow directly reflects on the film performance. The film thickness deviation can be reduced, the composition uniformity can be improved, the local defects caused by the uneven gas flow can be significantly reduced, and the electrical performance stability of the semiconductor device can be improved. The steady flow module only needs to be additionally arranged between the gas insert and the reaction chamber, does not need to be large-scale modified to the original equipment, can be directly adapted to different models of semiconductor process equipment (such as CVD and ALD equipment), reduces the modification cost, and is convenient for later maintenance and replacement. For the preparation of high-purity and ultra-thin films (such as a gate oxide layer below 5 nm), the present application can meet more stringent gas flow control requirements, so that the equipment can stably produce semiconductor devices with higher precision, and the process compatibility and product competitiveness of the equipment are improved. The steady flow module is accurately arranged between the small holes of the gas insert and the reaction chamber, forms a gas flow conduction path of “gas insert→steady flow module→reaction chamber”, ensures that the initial turbulent flow from the gas insert is rectified before entering the chamber, and avoids secondary disturbance in the chamber. This layout design is a core application scheme for ensuring the uniformity of the gas flow. The size (such as the channel width, the bending angle and the length) of the “U-shaped” or “S-shaped” channel can be adaptively adjusted according to the small hole distribution of the gas insert, the gas flow and the volume of the chamber, while ensuring the rectification effect, and avoiding excessive increase of the gas pressure drop to affect the process pressure stability. This adjustable structure parameter design is an important technical feature that is different from the fixed structure baffle.
[0030] Those skilled in the art can clearly understand that, for the convenience and brevity of description, only the above-mentioned division of each functional unit and module is exemplified, and in actual application, the above-mentioned functions can be completed by different functional units and modules according to needs, that is, the internal structure of the device is divided into different functional units or modules to complete all or part of the functions described above. Each functional unit and module in the embodiment can be integrated in one processing unit, or each unit can exist physically independently, or two or more units can be integrated in one unit. The integrated unit can be realized in the form of hardware or in the form of software functional unit. In addition, the specific names of each functional unit and module are only for convenient distinction, and do not limit the protection scope of the present application. The specific working process of the units and modules in the above system can refer to the corresponding process in the foregoing method embodiments, which will not be described here.
[0031] The above specific embodiments do not constitute a limitation on the protection scope of the present application. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can occur depending on design requirements and other factors. Any modification, equivalent replacement and improvement within the spirit and principles of the present application should be included in the protection scope of the present application.
Claims
1. A current regulating module for a semiconductor device, characterized by, Including a shell (1), the shell (1) is uniformly provided with a plurality of gas inlet interfaces (2) on one side, the other side of the shell (1) is provided with a plurality of gas outlet interfaces (3), the number of the plurality of gas inlet interfaces (2) and the plurality of gas outlet interfaces (3) is same, the plurality of gas inlet interfaces (2) and the plurality of gas outlet interfaces (3) are one-to-one corresponding, the plurality of gas inlet interfaces (2) and the plurality of gas outlet interfaces (3) are connected through the tortuous rectifying channel (4).
2. A current regulating module for a semiconductor device according to claim 1, wherein, The rectifying channel (4) is a symmetric S-shaped structure or a symmetric S-shaped structure.
3. A current regulating module for a semiconductor device according to claim 2, wherein, The convex / concave direction of the rectifying channel (4) is vertical or horizontal.
4. The current regulating module for a semiconductor device of claim 1, wherein, Each rectifying channel (4) includes a first segment (401), a second segment (402) and a third segment (403) arranged in sequence, the first segment (401) and the third segment (403) are horizontally arranged, and the second segment (402) is an upwardly inclined slope segment.
5. A current regulating module for a semiconductor device according to claim 4, wherein, The cross section of the rectifying channel (4) is hexagonal, and the cross sections of adjacent rectifying channels (4) form a honeycomb structure.
6. A current regulating module for a semiconductor device as recited in claim 4, wherein, The length of the rectifying channel (4) is greater than one and a half times the width of the shell (1).
7. A current regulating module for a semiconductor device as defined in claim 2, wherein, The length of the rectifying channel (4) is greater than two times the width of the shell (1).
8. A current regulating module for a semiconductor device according to claim 2, wherein, The rectifying channel (4) includes a plurality of straight segments and a plurality of bending segments.
9. A current regulating module for a semiconductor device according to claim 8, wherein, The bending angle of the bending segment is greater than or equal to ninety degrees.
10. A method of using a current regulating module for a semiconductor device, according to any one of claims 1-9, characterized in that, Including the following steps: The flow stabilizing module is arranged between the gas introduction assembly and the reaction chamber, so that the gas in the gas introduction assembly flows into the plurality of rectifying channels (4) from the plurality of gas inlet interfaces (2), and the gas in the plurality of rectifying channels (4) flows into the reaction chamber from the plurality of gas outlet interfaces (3); After the gas is introduced from the plurality of gas inlet interfaces (2), it flows through the tortuous rectifying channel (4) and flows into the reaction chamber from the plurality of gas outlet interfaces (3).