Ion detection device

Abstract

The invention discloses an ion detection device, which comprises a substrate, a circuit layer, an ion sensitive layer, a packaging layer and a barrier layer, and is characterized in that the circuit layer is located at one side of the substrate; the circuit layer comprises a first transistor; the ion sensitive layer is located on one side of the circuit layer away from the substrate; the packaging layer is located on one side, away from the substrate, of the ion sensitive layer; the packaging layer is provided with a first through hole, and the first through hole exposes part of the ion sensitive layer; the barrier layer is located between the circuit layer and the ion sensitive layer; the barrier layer comprises a first barrier part, and the first barrier part is overlapped with the first through hole in the direction perpendicular to the plane where the substrate is located. According to the technical scheme, the reliability of the device can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of ion detection, and in particular to an ion detection device. BACKGROUND

[0002] The ion detection device based on a transistor (for example, a thin film transistor) can convert the ion concentration signal into a measurable electrical signal by specific interaction between the ion sensitive layer and the ion to be detected, and then change the key electrical parameters (for example, threshold voltage, channel conductivity or source-drain current) of the transistor, so as to realize miniaturization, high integration and low power consumption of ion detection.

[0003] However, the current ion detection device has a reliability problem due to the penetration of the test solution to the area where the transistor is located inside, resulting in device failure. SUMMARY

[0004] The present application provides an ion detection device to improve the reliability of the device.

[0005] The ion detection device provided by the present application comprises:

[0006] a substrate;

[0007] a circuit layer located on one side of the substrate; the circuit layer comprises a first transistor;

[0008] an ion sensitive layer located on a side of the circuit layer away from the substrate;

[0009] a packaging layer located on a side of the ion sensitive layer away from the substrate; the packaging layer is provided with a first through hole, and the first through hole exposes part of the ion sensitive layer;

[0010] a barrier layer located between the circuit layer and the ion sensitive layer; the barrier layer comprises a first barrier portion, and the first barrier portion overlaps the first through hole in a direction perpendicular to the plane where the substrate is located.

[0011] The technical scheme of the embodiment of the present application sets the barrier layer between the ion sensitive layer and the circuit layer, sets the barrier layer to comprise the first barrier portion corresponding to the first through hole, and sets the first barrier portion and the first through hole to overlap in the direction perpendicular to the plane where the substrate is located. In this way, the first barrier portion can be used to block at least part of the solution that continues to penetrate from the first through hole to the side of the substrate, weaken or even avoid the adverse effects of the test solution on the first transistor, and improve the reliability of the device.

[0012] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present application, nor is it used to limit the scope of the present application. Other features of the present application will become apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0013] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly introduced. Obviously, the drawings in the following description only constitute some embodiments of the present application, and for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1 is a structural schematic diagram of an ion detection device provided by an embodiment of the present application;

[0015] Figure 2 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0016] Figure 3 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0017] Figure 4 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0018] Figure 5 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0019] Figure 6 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0020] Figure 7 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0021] Figure 8 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0022] Figure 9 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0023] Figure 10 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0024] Figure 11 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0025] Figure 12 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0026] Figure 13 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application;

[0027] Figure 14is a structural schematic view of another ion detection device provided by an embodiment of the present application.

[0028] Figure 15 is a structural schematic view of another ion detection device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0029] In order to make the personnel in the art better understand the present application, the technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work should fall within the scope of protection of the present application.

[0030] It is apparent that various modifications and changes can be made to the present application without departing from the spirit or scope thereof. Accordingly, the present application intends to cover all modifications and changes as falling within the scope of the claims (technical solutions claimed to be protected), and their equivalents. It should be noted that the embodiments provided by the present application can be combined with each other without contradiction, if possible.

[0031] First of all, it should be noted that, unless otherwise defined, the technical terms or scientific terms used in the present application should be understood as the usual meanings understood by those having ordinary skills in the art to which the present application belongs. The terms "first", "second", and similar terms used in the present application do not represent any order, number, or importance, but are only used to distinguish different components. "Include" and similar terms mean that the elements or objects before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connected" or "connected" and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right", and similar terms are only used to represent relative positional relationships, and when the absolute position of the described object changes, the relative positional relationship may also change accordingly. In addition, the shapes and sizes of the components in the drawings do not reflect the true proportions, but only serve to illustrate the content of the present application.

[0032] The existing ion detection device usually comprises a substrate and a transistor, an ion sensitive layer and a packaging layer which are sequentially stacked from bottom to top on one side of the substrate, and a through hole is arranged on the packaging layer to expose the ion sensitive layer, so that the test solution can contact the ion sensitive layer through the through hole, and then the ion detection can be realized through the cascade response mechanism of the ion sensitive layer to the electrical parameters of the transistor in response to the ion to be detected. The inventors have found that in the conventional ion detection device, the through hole on the packaging layer usually overlaps with the transistor in the projection direction of the device thickness, for example, overlaps with the channel region of the transistor. Therefore, when detecting, the test solution may penetrate through the ion sensitive layer and the dielectric layer above the transistor to reach the film layer where the transistor is located, causing reliability problems and leading to device failure, for example: the test solution may corrode the transistor, leading to device failure; the source and drain of the transistor may form a path with the test solution, leading to device leakage and short circuit failure.

[0033] To solve this problem, the present application provides an ion detection device. The ion detection device comprises a substrate, a circuit layer, an ion sensitive layer, a packaging layer and a barrier layer. The circuit layer is located on one side of the substrate. The circuit layer comprises a first transistor. The ion sensitive layer is located on the side of the circuit layer away from the substrate. The packaging layer is located on the side of the ion sensitive layer away from the substrate. The packaging layer is provided with a first through hole which exposes part of the ion sensitive layer. The barrier layer is located between the circuit layer and the ion sensitive layer. The barrier layer comprises a first barrier portion which overlaps with the first through hole in the direction perpendicular to the plane where the substrate is located.

[0034] By using the above scheme, since the barrier layer is arranged between the ion sensitive layer and the circuit layer, and the barrier layer comprises the first barrier portion which overlaps with the first through hole, at least part of the solution which continues to penetrate from the first through hole to the side of the substrate can be blocked by the barrier layer, thereby weakening or even avoiding the adverse effects of the test solution on the first transistor, and improving the reliability of the device.

[0035] The above is the core idea of the present application. The technical solutions of the embodiments of the present application will be described clearly and completely in combination with the drawings in the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0036] Figure 1 is a structural schematic diagram of an ion detection device provided by an embodiment of the present application, as Figure 1As shown, the ion detection device 100 provided by the embodiment of the present application comprises a substrate 10, a circuit layer 20, an ion-sensitive layer 30, an encapsulation layer 40 and a barrier layer 50, the circuit layer 20 is located on one side of the substrate 10; the circuit layer 20 comprises a first transistor 21; the ion-sensitive layer 30 is located on a side of the circuit layer 20 away from the substrate 10; the encapsulation layer 40 is located on a side of the ion-sensitive layer 30 away from the substrate 10; the encapsulation layer 40 is provided with a first through hole 41, and the first through hole 41 exposes part of the ion-sensitive layer 30; the barrier layer 50 is located between the circuit layer 20 and the ion-sensitive layer 30; the barrier layer 50 comprises a first barrier portion 51, and the first barrier portion 51 overlaps the first through hole 41 in a direction Z perpendicular to a plane in which the substrate 10 is located.

[0037] The first transistor 21 refers to a transistor in the circuit layer 20 for outputting a corresponding electrical signal in response to an ion sensing signal of the ion-sensitive layer 30 to the ion to be measured (which is manifested as a change in voltage / charge on the ion-sensitive layer 30 with the change in ion concentration). Optionally, the first transistor 21 is a thin film transistor, and the circuit layer 20 can comprise other electronic elements in addition to the first transistor 21, which can be set as needed by those skilled in the art, and the embodiment of the present application does not limit this. The circuit layer 20 can be specifically understood as a film layer in which the electronic elements such as the first transistor 21 are located.

[0038] The ion-sensitive layer 30 has ion sensitivity, and the embodiment of the present application does not specially limit the material of the ion-sensitive layer 40, as long as it can take into account factors such as ion selectivity, stability, compatibility with semiconductor processes and detection sensitivity. For example, when the ion to be measured is Cl ion, the material of the ion-sensitive layer 30 can include but is not limited to AgCl; when the ion to be measured is Na ion, the material of the ion-sensitive layer 30 can include but is not limited to ; when the ion to be measured is Cu ion, the material of the ion-sensitive layer 30 can include but is not limited to ZnO; when the ion to be measured is H ion, the material of the ion-sensitive layer 30 can include but is not limited to ; and when the ion to be measured is an ammonium ion, the material of the ion-sensitive layer 30 can include but is not limited to graphene and two-dimensional materials (such as molybdenum disulfide).

[0039] The encapsulation layer 40 is provided with the first through hole 41, and the test solution can contact the ion-sensitive layer 30 through the first through hole 41, and then realize ion detection through the above-mentioned cascade response mechanism of ion sensing-transistor electrical parameters of the ion-sensitive layer to the ion to be measured.

[0040] In the embodiment, the encapsulation layer 40 can be a single layer of film or a plurality of layers of film stacked together, and the present embodiment does not limit the encapsulation layer 40. The material of the encapsulation layer 40 needs to have low permeability to play a sealing role and protect the device performance and service life, and the present embodiment does not specially limit the material of the encapsulation layer 40.

[0041] It should be noted that one or two or even more first through holes 41 can be arranged in the encapsulation layer 40, and the present embodiment does not limit the number of the first through holes 41. Figure 1 For example, only one first through hole 41 is arranged in the encapsulation layer 40.

[0042] Further, in the embodiment, a barrier layer 50 is arranged between the ion-sensitive layer 30 and the circuit layer 20, and the barrier layer 50 includes a first barrier portion 51, which overlaps the first through hole 41 in the direction perpendicular to the plane of the substrate 10.

[0043] The barrier layer 50 is used to block the test solution from continuing to penetrate in the direction close to the substrate 10. Compared with the non-through hole area (i.e., the area outside the through hole) of the encapsulation layer 40, the test solution is more likely to continue to penetrate downward through the first through hole 41. In the embodiment, the barrier layer 50 is arranged between the ion-sensitive layer 30 and the circuit layer 20, and the barrier layer 50 includes the first barrier portion 51 corresponding to the first through hole 41. The first barrier portion 51 and the first through hole 41 are arranged in the direction Z perpendicular to the plane of the substrate 10. In this way, the first barrier portion 51 can block at least part of the solution that continues to penetrate from the first through hole 41 to the side of the substrate 10, weaken the adverse effects of the test solution on the first transistor, and improve the reliability of the device.

[0044] Optionally, the material of the barrier layer 50 includes metal. The metal has good density and can ensure the blocking effect on the solution, thereby improving the reliability of the device. For example, the material of the barrier layer 50 can include but is not limited to copper, aluminum, silver, and the like.

[0045] Referring to Figure 1 Optionally, the orthographic projection of the first barrier portion 51 on the substrate 10 covers the orthographic projection of the first through hole 41 on the substrate 10.

[0046] Specifically, the projection coverage relationship can be understood as that the area of the orthographic projection of the first blocking part 51 on the substrate 10 is greater than the area of the orthographic projection of the first via hole 41 on the substrate 10, and the boundary of the orthographic projection of the first blocking part 51 on the substrate 10 is located at the periphery of the boundary of the orthographic projection of the first via hole 41 on the substrate 10, in other words, the boundary of the orthographic projection of the first blocking part 51 on the substrate 10 entirely surrounds the boundary of the orthographic projection of the first via hole 41 on the substrate 10. In this way, the first blocking part 51 can be used to block the test solution from continuing to penetrate in the direction close to the substrate 10 from the first via hole 41, so as to avoid damaging the first transistor 21 and affecting the device reliability.

[0047] With reference to Figure 1 Optionally, the first transistor 21 includes a source electrode 211 and a drain electrode 212, and the ion detection device 100 further includes a first dielectric layer 61 covering the source electrode 211 and the drain electrode 212; the blocking layer 50 is located on the side of the first dielectric layer 61 away from the substrate 10.

[0048] With reference to Figure 1 The first transistor 21 further includes an active layer 213, and the source electrode 211 and the drain electrode 212 are located on the side of the active layer 213 away from the substrate 10 and form ohmic contacts with the active layer 213, and one of the source electrode 211 and the drain electrode 212 serves as a signal output terminal of the first transistor 21.

[0049] The first dielectric layer 61 specifically refers to a dielectric layer located on the side of the first transistor 21 away from the substrate 10 and covering the source electrode 211 and the drain electrode 212. Figure 1 As shown in FIG. 1, the first dielectric layer 61 is in contact with the source electrode 211 and the drain electrode 212 and covers the side surface and the upper surface of the source electrode 211 and the drain electrode 212. In this embodiment, the blocking layer 50 is located on the side of the first dielectric layer 61 away from the substrate 10, so that the adjustment of the preparation process can be reduced, and the yield can be ensured.

[0050] In summary, by arranging the blocking layer between the ion-sensitive layer and the circuit layer, the blocking layer includes the first blocking part corresponding to the first via hole, and the first blocking part and the first via hole are arranged in the direction perpendicular to the plane of the substrate, so that the first blocking part can be used to block the solution at least partially penetrating from the first via hole to the side of the substrate, weaken or even avoid the adverse effects of the test solution on the first transistor, and improve the device reliability.

[0051] With reference to Figure 1 In an embodiment, optionally, the first via hole 41 overlaps the channel region of the first transistor 21.

[0052] The channel region refers to a portion of the active layer 213 between the source electrode 211 and the drain electrode 212. By setting the first through hole 41 to overlap the channel region of the first transistor 21, the path of the ion sensing signal of the ion to be detected on the ion sensitive layer 30 to the active layer of the first transistor is shortened, and the detection sensitivity is ensured. In the embodiment, the first blocking part 51 can be used to block the penetration of the test solution from the first through hole 41 towards the side close to the substrate 10, so as to avoid damage of the active layer 213 of the first transistor 21 by the test solution.

[0053] Further, with reference to Figure 1 When the first through hole 41 overlaps the channel region of the first transistor 21, the first blocking part 51 also overlaps the channel region of the first transistor 21. At this time, the blocking layer 50 needs to have conductivity to ensure that the ion sensing signal on the ion sensitive layer 30 can act on the first transistor through the blocking layer 50, so as to realize ion detection.

[0054] With reference to Figure 1 The first transistor 21 includes the source electrode 211 and the drain electrode 212. Optionally, in the direction Z perpendicular to the plane where the substrate 10 is located, the first through hole 41 does not overlap at least one of the source electrode 211 and the drain electrode 212.

[0055] Specifically, the orthogonal projection of the first through hole 41 on the substrate 10 does not intersect with the orthogonal projection of the source electrode 211 on the substrate 10, and / or the orthogonal projection of the first through hole 41 on the substrate 10 does not intersect with the orthogonal projection of the drain electrode 212 on the substrate 10. In this way, the setting area of the first through hole 41 is away from at least one of the source electrode 211 and the drain electrode 212. On the one hand, the penetration of the test solution to the lower film layer is blocked by the blocking layer 50. On the other hand, by setting the first through hole 41 away from the area where the source electrode 211 and / or the drain electrode 212 is located, the risk of short circuit of the source electrode 211 and the drain electrode 212 by the test solution is further reduced, and the device reliability is improved.

[0056] Figure 2 is another structure diagram of an ion detection device provided by the embodiment of the present application, as shown in Figure 2 In another embodiment, optionally, in the direction Z perpendicular to the plane where the substrate 10 is located, the first through hole 41 does not overlap the first transistor 21. In other words, the orthogonal projection of the first through hole 41 on the substrate 10 does not intersect with the orthogonal projection of the first transistor 21 on the substrate 10. In this way, the setting area of the first through hole 41 is away from the first transistor 21. On the one hand, the penetration of the test solution to the lower film layer is blocked by the blocking layer 50. On the other hand, by setting the first through hole 41 away from the area where the first transistor 21 is located, the risk of damage of the first transistor 21 by the test solution is further reduced, and the device reliability is improved.

[0057] The orthographic projection of the first transistor 21 on the substrate 10 can be understood as a collection area of the orthographic projection of each film layer structure in the first transistor 21 on the substrate 10. Figure 2 For example, the first transistor 21 includes a source 211, a drain 212, an active layer 213, and a first gate 214, the orthographic projection of the first transistor 21 on the substrate 10 is a collection area of the orthographic projection of the source 211, the drain 212, the active layer 213, and the first gate 214 on the substrate 10.

[0058] Referring to Figure 2 In this embodiment, the first blocking part 51 can not overlap the first transistor 21, and in this case, the ion-sensitive layer 30 can be extended to the region where the first transistor 21 is located, so that the ion-sensitive layer 30 overlaps the channel region of the first transistor 21 in the direction Z perpendicular to the plane where the substrate 10 is located, to ensure that the ion sensing signal can act on the first transistor 21 to realize ion detection.

[0059] Referring to Figure 2 It should be noted that in this example, since the blocking layer 50 does not overlap the first transistor 21, the blocking layer 50 can not have conductivity, and in addition to using a metal material, other materials that can effectively block the penetration of the solution can also be selected, and the embodiments of the present application do not limit this.

[0060] Figure 3 is another structure diagram of an ion detection device provided by the embodiments of the present application, as Figure 3 Optionally, the blocking layer 50 further includes a second blocking part 52, and the second blocking part 52 overlaps the first transistor 21 in the direction Z perpendicular to the plane where the substrate 10 is located.

[0061] The difference between the second blocking part 52 and the first blocking part 51 is that the second blocking part 52 does not overlap the first via hole 41 in the direction Z perpendicular to the plane where the substrate 10 is located, but overlaps the first transistor 21.

[0062] The non-via hole area of the packaging layer 40 can also have the possibility of the test solution penetrating into the film layer where the first transistor 21 is located, and the embodiments of the present application set the blocking layer 50 to further include the second blocking part 52, and set the second blocking part 52 to overlap the first transistor 21, so that the second blocking part 52 can be used to protect at least part of the region of the first transistor 21, and further reduce the device reliability problem caused by the penetration of the solution.

[0063] Exemplarily, Figure 3As an example, the first via hole 41 and the first transistor 21 do not overlap in the plane direction Z in which the vertical substrate 10 is located, and the first blocking part 51 is arranged corresponding to the first via hole 41, so as to prevent the test solution from penetrating from the first via hole 41 in the direction close to the substrate 10, and the second blocking part 52 is arranged corresponding to the first transistor 21, so as to prevent the test solution from penetrating from the non-via hole area of the packaging layer 40 in the direction close to the substrate 10, thereby protecting the first transistor 21 and further improving the reliability of the device. Referring to Figure 3 In the embodiment, the second blocking part 52 overlaps with the source 211, the drain 212 and the active layer 213 of the first transistor 21 in the plane direction Z in which the vertical substrate 10 is located, so as to provide comprehensive protection for the first transistor 21.

[0064] Figure 4 is another structure diagram of an ion detection device provided by the embodiment of the present application, as shown in Figure 4 Optionally, the blocking layer 50 includes a blocking structure 501, and the blocking structure 501 includes the first blocking part 51 and the second blocking part 52 connected with each other.

[0065] Specifically, in the embodiment, the first blocking part 51 and the second blocking part 52 are connected with each other to form an integral whole, i.e., the blocking structure 501. In this way, the patterning process difficulty of the blocking layer can be reduced, and the requirement for the fineness of the corresponding mask can be reduced, thereby ensuring the product yield.

[0066] Continuing to refer to Figure 4 Optionally, the orthographic projection of the blocking structure 501 on the substrate 10 covers the orthographic projection of the first transistor 21 on the substrate 10.

[0067] Specifically, the orthographic projection of the blocking structure 501 on the substrate 10 covers at least the orthographic projection of the first transistor 21 on the substrate 10. In this way, the first transistor 21 can be comprehensively protected by the blocking structure 501.

[0068] Referring to Figure 4 When the first via hole 41 and the first transistor 21 do not overlap, the orthographic projection of the blocking structure 501 on the substrate 10 not only covers the orthographic projection of the first transistor 21 on the substrate 10, but also overlaps with the orthographic projection of the first via hole 41 on the substrate 10. Figure 4The normal projection of the blocking structure 501 on the substrate 10 covers both the normal projection of the first transistor 21 on the substrate 10 and the normal projection of the first via hole 41 on the substrate 10. In this case, the blocking structure 501 can not only block the penetration of the test solution from the first via hole 41 to the lower film layer, but also provide comprehensive protection for the first transistor 21. Since the first via hole 41 does not overlap the first transistor 21, even if a small amount of solution penetrates at the first via hole 41 after long-term use of the device, it is difficult to have an adverse effect on the first transistor 21, which can effectively guarantee the reliability and service life of the device.

[0069] Figure 5 is another structure diagram of an ion detection device provided by an embodiment of the present application, as shown in the figure, in other embodiments, the first via hole 41 overlaps the channel region of the first transistor 21, and the normal projection of the blocking structure 501 on the substrate 10 covers the normal projection of the first transistor 21 on the substrate 10. In this way, the blocking structure 501 can also be used to block the penetration of the test solution from the first via hole 41 to the lower film layer, and provide comprehensive protection for the first transistor 21. Figure 5

[0070] According to the above explanation, when the normal projection of the blocking structure 501 on the substrate 10 covers the normal projection of the first transistor 21 on the substrate 10, the blocking layer 50 should have conductivity, for example, a conductive metal can be selected to simultaneously consider conductivity and film layer density, so as to realize ion detection and block the penetration of the test solution to the lower film layer.

[0071] It should be noted that the above embodiments are all illustrated by taking the ion-sensitive layer 30 overlapping the channel region of the first transistor 21 as an example, Figure 6 is another structure diagram of an ion detection device provided by an embodiment of the present application, as shown in the figure, in other embodiments, when the first via hole 41 does not overlap the first transistor 21 in the direction Z perpendicular to the plane where the substrate 10 is located, the normal projection of the blocking structure 501 on the substrate 10 covers the normal projection of the first transistor 21 on the substrate 10, and the ion-sensitive layer 30 does not overlap the first transistor 21 in the direction Z perpendicular to the plane where the substrate 10 is located. In this case, the ion-sensitive signal on the ion-sensitive layer 30 can act on the first transistor 21 through the blocking structure 501, so as to realize ion detection. Figure 6

[0072] Figure 7 is another structure diagram of an ion detection device provided by an embodiment of the present application, as shown in the figure, in other embodiments, when the first via hole 41 does not overlap the first transistor 21 in the direction Z perpendicular to the plane where the substrate 10 is located, the normal projection of the blocking structure 501 on the substrate 10 covers the normal projection of the first transistor 21 on the substrate 10, and the ion-sensitive layer 30 does not overlap the first transistor 21 in the direction Z perpendicular to the plane where the substrate 10 is located. In this case, the ion-sensitive signal on the ion-sensitive layer 30 can act on the first transistor 21 through the blocking structure 501, so as to realize ion detection. Figure 7 ​​As shown, the ion detection device 100 further comprises a dielectric layer 60 between the first transistor 21 and the blocking layer 50; the dielectric layer 60 is provided with a first recess 601, which overlaps the channel region of the first transistor 21 in the direction Z of the plane in which the vertical substrate 10 lies.

[0073] As shown, the first transistor comprises a source 211 and a drain 212 arranged in the same layer, and the dielectric layer 60 is between the first transistor 21 and the blocking layer 50, specifically, the dielectric layer 60 is between the source 21 or the drain 212 and the blocking layer 50. Figure 7

[0074] The number of the dielectric layer 60 can be one or more, and the first recess 601 can be located in at least one of the dielectric layers. Since the dielectric layer 60 is located on the side of the blocking layer 50 close to the first transistor 21, and the first recess 601 overlaps the channel region of the first transistor 21 in the direction Z of the plane in which the vertical substrate 10 lies, by providing the first recess 601 in the dielectric layer 60, the distance between the blocking structure 501 and the channel region of the first transistor 21 can be reduced, and the detection sensitivity can be improved.

[0075] For example, Figure 7 For example, the dielectric layer 60 comprises a first dielectric layer 61 covering the source 211 and the drain 212, as shown, Figure 7 The first dielectric layer 61 is provided with the first recess 601, and the depth of the first recess 601 is less than the thickness of the first dielectric layer 61, i.e. the first recess 601 does not penetrate the first dielectric layer 61. By providing the first recess 601 in the first dielectric layer 61 corresponding to the channel region of the first transistor 21, the distance between the blocking structure 501 and the channel region of the first transistor 21 can be reduced, and the detection sensitivity can be improved.

[0076] Figure 8 is another structure diagram of an ion detection device provided by an embodiment of the present application, as shown, Figure 8 In other embodiments, the dielectric layer 60 comprises a first dielectric layer 61 and a second dielectric layer 62, and the second dielectric layer 62 is between the first dielectric layer 61 and the blocking layer 50; the thickness of the second dielectric layer 62 is greater than the thickness of the first dielectric layer 61, and the first recess 601 is located in the second dielectric layer 62.

[0077] ​Specifically, in the embodiment, the second dielectric layer 62 is additionally arranged on the side of the first dielectric layer 61 away from the substrate 10, and the thickness of the second dielectric layer 62 is greater than the thickness of the first dielectric layer 61. The first recess 601 is arranged in the second dielectric layer 62. In this way, by increasing the number and thickness of the dielectric layer above the first transistor 21, the difficulty of the test solution penetrating into the film layer where the first transistor 21 is located can be further increased, and the device reliability can be improved. Compared with arranging the recess in the first dielectric layer 61, arranging the first recess 601 in the second dielectric layer 62 can ensure that the distance between the blocking structure 501 and the channel region of the first transistor 21 is small, ensure the detection sensitivity, and reduce the requirement for process precision. The first dielectric layer 61 is used to protect the first transistor 21 below, so as to avoid damage to the first transistor 21 caused by over-etching in the process of processing the first recess 601.

[0078] As shown in Figure 8 , optionally, the first recess 601 penetrates through the second dielectric layer 62. In this way, the distance between the blocking structure 501 and the channel region of the first transistor 21 can be ensured to be small, and the detection sensitivity can be improved. Of course, this arrangement is not limited, and in other embodiments, the first recess 601 can not penetrate through the second dielectric layer 62 under the condition that the detection sensitivity meets the standard.

[0079] For example, the material of the first dielectric layer 61 includes but is not limited to SiN, and the material of the second dielectric layer 62 includes but is not limited to SiN and an organic resin material. Optionally, the thickness of the first dielectric layer 61 is 1000 angstroms to 3000 angstroms, and the thickness of the second dielectric layer 62 is greater than the thickness of the first dielectric layer 61.

[0080] Optionally, the first transistor 21 includes a source electrode 211 and a drain electrode 212. In the direction Z perpendicular to the plane where the substrate 10 is located, the first recess 601 does not overlap with the source electrode 211 and the drain electrode 212.

[0081] Specifically, the orthogonal projection of the first recess 601 on the substrate 10 does not intersect with the orthogonal projection of the source electrode 211 and the drain electrode 212 on the substrate 10, and only overlaps with the channel region of the first transistor 21. In this way, the isolation effect of the second dielectric layer between the source electrode 211, the drain electrode 212 and the test solution can be ensured, and the device reliability can be ensured.

[0082] It should be noted that the above embodiment is only taken as an example that the first transistor 21 includes one gate electrode (the first gate electrode 214). Specifically, the first gate electrode 214 is located between the active layer 213 and the substrate 10, and the first gate insulating layer 201 is arranged between the first gate electrode 214 and the active layer 213. At this time, optionally, at least part of the blocking structure 501 is in contact with the first dielectric layer 61. For example, Figure 6 andFigure 7 For example, the whole blocking structure 501 is in contact with the first dielectric layer 61, Figure 8 For example, the partial blocking structure 501 is in contact with the first dielectric layer 61 through the first groove 601.

[0083] Figure 9 is a schematic diagram of another ion detection device structure provided by an embodiment of the present application, as shown, Figure 9 In other embodiments, the first transistor 21 includes a first gate 214, an active layer 213, and a second gate 215; the first gate 214 is located between the substrate 10 and the active layer 213, and the second gate 215 is located on the side of the active layer 213 away from the substrate 10; the ion detection device 100 further includes a dielectric layer 60 located between the second gate 215 and the blocking layer 50; the dielectric layer 60 includes a first via 610, and the blocking structure 501 is electrically connected to the second gate 215 through the first via 610.

[0084] Specifically, in the present embodiment, the first transistor 21 is a double-gate transistor having a bottom gate and a top gate, i.e., the first gate 214 and the second gate 215. A first gate insulating layer 201 is arranged between the first gate 214 and the active layer 213, and a second gate insulating layer 202 is arranged between the second gate 215 and the active layer 213. The second gate insulating layer 202 exposes the source region and the drain region of the active layer 213, so that the source 211 is in contact with the source region of the active layer 213, the drain 212 is in contact with the drain region of the active layer 213, and the second gate 215 is insulated from the source 211 and the drain 212.

[0085] The first gate 214 is used to control the switching of the first transistor 21, and the second gate 215 is used to receive an ion sensing signal to make the first transistor 21 output an electrical signal in response to the ion sensing signal. Specifically, the second gate 215 is electrically connected to the blocking structure 501 through the first via 610 in the upper dielectric layer 60, so as to receive the ion sensing signal.

[0086] In an embodiment, an etch stop layer (ESL) can be used as the second gate insulating layer. The etch stop layer is thinner than the insulating layer composed of the traditional gate insulating layer and the passivation layer, so that the capacitive coupling amplification effect can be achieved, and the ion response sensitivity of the device is improved.

[0087] As described above, one or more dielectric layers can be included between the first transistor 21 and the blocking layer 50. Regardless of the number of dielectric layers 60, the first via 610 overlaps the second gate 215 in the direction Z perpendicular to the plane in which the substrate 10 is located, and penetrates the dielectric layer between the second gate 215 and the blocking structure 501, so as to achieve the electrical connection between the blocking structure 501 and the second gate 215.

[0088] Exemplarily, Figure 9 In the case that a layer of dielectric layer 60, such as a first dielectric layer 61, is included between the first transistor 21 and the blocking layer 50, the first via hole 610 is located in the first dielectric layer 61 and penetrates through the portion of the first dielectric layer 61 between the second gate 215 and the blocking structure 501, so that the second gate 215 and the blocking structure 501 are electrically connected through the first via hole 610.

[0089] Exemplarily, Figure 10 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application, as shown in the figure, Figure 10 In other embodiments, the dielectric layer 60 includes a first dielectric layer 61 and a second dielectric layer 62, the second dielectric layer 62 is located on the side of the first dielectric layer 61 away from the substrate 10, and in this case, the first via hole 610 includes a first sub-via hole 611 and a second sub-via hole 612 connected in series, the first sub-via hole 611 is located in the second dielectric layer 62 and penetrates through the second dielectric layer 62, and the second sub-via hole is located in the first dielectric layer 61 and penetrates through the portion of the first dielectric layer 61 between the second gate 215 and the second dielectric layer 62, so that the second gate 215 and the blocking structure 501 are electrically connected through the first via hole 610. As shown in the figure, Figure 10 Optionally, the side walls of the first sub-via hole 611 and the second sub-via hole 612 are smoothly connected (without steps).

[0090] Figure 11 is a structural schematic diagram of another ion detection device provided by an embodiment of the present application, as shown in the figure, Figure 11 In an embodiment, the aperture of the first sub-via hole 611 is larger than the aperture of the second sub-via hole 612, and there is a step surface between the inner walls of the first sub-via hole 611 and the second sub-via hole 612. Specifically, part of the upper surface of the first dielectric layer 61 constitutes the step surface. Exemplarily, in this embodiment, the first sub-via hole 611 can be designed by referring to the first groove 601 described above.

[0091] On the basis of any of the above embodiments, by referring to Figure 11 Optionally, the ion sensitive layer 30 is in direct contact with the blocking layer 50.

[0092] Specifically, the ion sensitive layer 30 and the blocking layer 50 are adjacent film layers, and there is no other film layer, such as a dielectric layer, between them. In this way, the number of film layers of the ion detection device can be avoided from being excessively increased, which is conducive to the thin design of the device. In addition, when the blocking layer 50 covers the channel region of the first transistor 21, by setting the ion sensitive layer 30 in direct contact with the blocking layer 50, it is conducive to ensuring that the ion sensitive layer 30 and the blocking layer 50 have a large contact area, thereby ensuring the sensitivity of the device.

[0093] Figure 12 is another structure diagram of an ion detection device provided by an embodiment of the present application, as shown in Figure 12 Optionally, the ion detection device 100 further comprises a reference electrode 70, which is located on the side of the circuit layer 20 away from the substrate 10; the packaging layer 40 further comprises a second through hole 42, which exposes part of the reference electrode 70.

[0094] In the embodiment, a fixed potential is applied to the reference electrode 70, which is used to provide a known and stable potential reference for the ion detection device, so as to ensure the accuracy and reliability of the detection result.

[0095] As shown in Figure 12 , the reference electrode 70 is insulated from the ion-sensitive layer 30 and the blocking layer 50. During ion detection, the reference electrode 70 can be in contact with the test solution through the second through hole 42. In the embodiment, the ion-sensitive layer and the reference electrode 70 are arranged in the ion detection device 100 at the same time, so that the integration of the device can be improved. In other embodiments, the ion-sensitive layer and the reference electrode can also be arranged in different devices, and the embodiments of the present application are not limited in this regard.

[0096] Two possible arrangement modes of the reference electrode 70 are provided below.

[0097] As one possible arrangement mode, refer to Figure 12 Optionally, in the direction Z perpendicular to the plane in which the substrate 10 is located, the reference electrode 70 overlaps the ion-sensitive layer 30; the ion detection device 100 further comprises a first insulating layer 80, which is located between the reference electrode 70 and the ion-sensitive layer 30.

[0098] In the embodiment, the first insulating layer 80 is formed on the side of the ion-sensitive layer 30 away from the substrate 10, and the first insulating layer 80 is used to realize the insulation between the reference electrode 70 and the ion-sensitive layer 30, which is relatively simple in process and does not need to adjust the pattern design of the existing ion-sensitive layer 30.

[0099] Refer to Figure 12Further, the first insulating layer 80 and the first through hole 41 are not overlapped in the direction Z of the plane in which the substrate 10 is located. In other words, the cut-off position of the first insulating layer 80 is located in the non-through hole area of the packaging layer 40, and does not extend to the area in which the first through hole 41 is located. When the first insulating layer 80 and the first through hole 41 are overlapped, the first insulating layer 80 will shield a part of the ion-sensitive layer 30 in the area in which the first through hole 41 is located, reducing the exposed area of the ion-sensitive layer 30, so that, in the case where the size of the first through hole 41 is unchanged, the detection sensitivity will be reduced. In contrast, in the present embodiment, the first insulating layer 41 and the first through hole 41 are not overlapped in the direction Z of the plane in which the substrate 10 is located, so that the first through hole 41 only exposes the ion-sensitive layer 30, thereby ensuring the detection sensitivity.

[0100] As another possible implementation, Figure 13 is another structural schematic diagram of an ion detection device provided by the present embodiment, as shown in Figure 13 Optionally, the reference electrode 70 and the ion-sensitive layer 30 are not overlapped.

[0101] In the present embodiment, the pattern of the ion-sensitive layer 30 is adjusted to reserve a space for arranging the reference electrode 70, so that the reference electrode 70 and the ion-sensitive layer 30 are not overlapped in the direction Z of the plane in which the substrate 10 is located, i.e., the reference electrode 70 and the ion-sensitive layer 30 have a spacing in the direction parallel to the plane in which the substrate 10 is located, thereby ensuring the mutual insulation between the two.

[0102] Continuing to refer to Figure 13 Optionally, the reference electrode 70 is arranged in the same layer as and spaced from the first blocking part 51. In other words, the first blocking part 51 and the reference electrode 70 are simultaneously manufactured when the blocking layer 50 is manufactured. Specifically, a whole layer of blocking film is first manufactured, and then etching process is used to pattern the blocking film, so as to simultaneously obtain the pattern of the first blocking part 51 and the reference electrode 70, thereby achieving the same-layer and spaced arrangement of the two. In this way, the preparation efficiency can be improved, and the manufacturing cost can be reduced.

[0103] For example, referring to Figure 13 In this example, the first blocking part 51 and the second blocking part 52 are connected to each other and integrally formed, forming a blocking structure 501, which is arranged in the same layer as and spaced from the reference electrode 70.

[0104] Optionally, the ion detection device 100 further comprises a microfluidic module (not shown), and the microfluidic module comprises a microfluidic channel, which is in communication with the first through hole.

[0105] Specifically, the ion detection device can use a microfluidic scheme to realize injection of the test solution. The specific structure of the microfluidic module is not specially limited in the embodiments of the present application, and can be designed by the person skilled in the art, as long as the microfluidic channel is in communication with the first through hole 41 on the packaging layer 40, so that the test solution can enter the first through hole 41 through the microfluidic channel and contact the ion-sensitive layer 30.

[0106] With reference to Figure 13 It can be understood that, when the ion detection device 100 includes the reference electrode 70, the microfluidic channel is also connected with the second through hole 42.

[0107] In other embodiments, the test solution can also be dropped on the ion detection device in the manner of dropping by using a pipette, and the embodiments of the present application do not specially limit this.

[0108] It can be understood that one first transistor 21 corresponds to one detection pixel, and the above embodiments are all taken as examples of the single-pixel ion detection device, and in other embodiments, the ion detection device can also include a plurality of detection pixels arranged in an array to improve the performance of the ion detection device. The following briefly describes this, and the same parts will not be repeated.

[0109] Exemplarily, Figure 14 is another structure diagram of an ion detection device provided by the embodiments of the present application, as Figure 14 shown, the ion detection device 100 includes a plurality of first transistors 21, the plurality of first transistors 21 are arranged in a two-dimensional array along a first direction X and a second direction Z, the first direction X and the second direction Y are perpendicular to each other and both are parallel to the plane on which the substrate 10 is located; the ion detection device 100 also includes a plurality of scanning lines 91, a plurality of bias signal lines 92 and a plurality of feedback signal lines 93; the plurality of scanning lines 91 extend along the first direction X and are arranged along the second direction Y; the plurality of bias signal lines 92 and the plurality of feedback signal lines 93 both extend along the second direction Y and are arranged along the first direction X; the first gate 214 of the plurality of first transistors 21 arranged side by side along the first direction X is electrically connected with the same scanning line 91, the first pole (such as the source 211) of the plurality of first transistors 21 arranged side by side along the second direction Y is electrically connected with the same bias signal line 92, and the second pole (such as the drain 212) of the plurality of first transistors 21 arranged side by side along the second direction Y is electrically connected with the same feedback signal line 93.

[0110] One first transistor 21 corresponds to one detection pixel P. Specifically, the scanning line 91, the bias signal line 92 and the feedback signal line 93 are coupled with the control chip IC, the control chip IC can select the first transistor through the plurality of scanning lines 91, provide the bias signal to the first transistor 21 in the selected state through the bias signal line 92, and receive the output signal of the first transistor 21 through the feedback signal line 93, and then can comprehensively analyze the situation of the ion to be measured in the test solution according to the output signals of the plurality of first transistors 21, and improve the performance of the device.

[0111] With reference to Figure 14 In an embodiment, optionally, all the bias signal lines 92 are electrically connected.

[0112] With reference to Figure 14 When the ion detection device 100 includes a plurality of first transistors 21, optionally, the ion-sensitive layer 30 includes a plurality of first ion-sensitive patterns 31 arranged at intervals, one first ion-sensitive pattern 31 is arranged in correspondence with at least one first transistor 21, and the number of first ion-sensitive patterns 31 is less than or equal to the number of first transistors 21.

[0113] Exemplarily, Figure 14 Taking the case that the first ion-sensitive pattern 31 is arranged in one-to-one correspondence with the first transistor 21 as an example, in other embodiments, a plurality of first transistors 21 can correspond to the same first ion-sensitive pattern 31, and the embodiments of the present application do not limit this.

[0114] Figure 15 is another structure diagram of an ion detection device provided by the embodiments of the present application, as Figure 15 In other embodiments, optionally, the ion-sensitive layer 30 includes a second ion-sensitive pattern 32, and all the first transistors 21 are located within the coverage range of the second ion-sensitive pattern 32 in the direction perpendicular to the plane in which the substrate 10 is located. In other words, all the first transistors 21 correspond to the same ion-sensitive pattern 32.

[0115] It should be noted that, Figure 14 and Figure 15 are taken as examples in which the ion-sensitive layer 30 and the reference electrode 70 do not overlap, and with reference to the above description, in some embodiments, the ion-sensitive layer 30 and the reference electrode 70 overlap in the direction perpendicular to the plane in which the substrate 10 is located, and an insulating layer is arranged between the two to ensure the mutual insulation of the two.

[0116] With reference to Figure 14 and Figure 15 When the ion detection device 100 includes a plurality of first transistors 21, optionally, each first transistor 21 is arranged in correspondence with at least one first via hole 41. Figure 14and Figure 15 For example, only the case that each first transistor 21 is arranged corresponding to two first vias 41 is illustrated. In other embodiments, each first transistor 21 can be arranged corresponding to one or more first vias 41.

[0117] Referring to Figure 14 and Figure 15 When the ion detection device 100 includes a plurality of first transistors 21, the blocking structure 501 is arranged corresponding to each first transistor 21.

[0118] Referring to Figure 14 and Figure 15 When the ion detection device 100 includes a plurality of first transistors 21, the ion detection device 100 can include only one reference electrode 21. The cross-sectional structure of each detection pixel P can be arranged according to any of the above embodiments, which will not be repeated here.

[0119] The above detailed description does not constitute a limitation on the protection scope of the present application. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations, and substitutions can be made according to design requirements and other factors. Any modifications, equivalent replacements, and improvements made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. An ion detection device, comprising: Comprising: a substrate; a circuit layer on one side of the substrate; the circuit layer comprising a first transistor; an ion-sensitive layer on a side of the circuit layer distal to the substrate; an encapsulation layer on a side of the ion-sensitive layer distal to the substrate; the encapsulation layer being provided with a first via, the first via exposing a portion of the ion-sensitive layer; a barrier layer between the circuit layer and the ion-sensitive layer; the barrier layer comprising a first barrier portion, the first barrier portion overlapping the first via in a direction perpendicular to a plane in which the substrate lies.

2. The ion detection device according to claim 1, wherein a footprint of the first barrier portion on the substrate covers a footprint of the first via on the substrate.

3. The ion detection device according to claim 1, wherein the barrier layer further comprises a second barrier portion, the second barrier portion overlapping the first transistor in a direction perpendicular to a plane in which the substrate lies.

4. The ion detection device according to claim 3, wherein the barrier layer comprises a barrier structure, the barrier structure comprising the first barrier portion and the second barrier portion connected to each other.

5. The ion detection device according to claim 4, wherein a footprint of the barrier structure on the substrate covers a footprint of the first transistor on the substrate.

6. The ion detection device according to claim 1, wherein the first transistor comprises a source and a drain, the first via does not overlap at least one of the source and the drain in a direction perpendicular to a plane in which the substrate lies.

7. The ion detection device according to claim 6, wherein the first via does not overlap the first transistor in a direction perpendicular to a plane in which the substrate lies.

8. The ion detection device of claim 5, wherein, Further comprising: a dielectric layer between the first transistor and the barrier layer; the dielectric layer being provided with a first recess, the first recess overlapping a channel region of the first transistor in a direction perpendicular to a plane in which the substrate lies.

9. The ion detection device according to claim 8, wherein the dielectric layer comprises a first dielectric layer and a second dielectric layer, the second dielectric layer being between the first dielectric layer and the barrier layer; a thickness of the second dielectric layer is greater than a thickness of the first dielectric layer, and the first recess is in the second dielectric layer.

10. The ion detection device according to claim 9, wherein the first recess penetrates the second dielectric layer.

11. The ion detection device according to claim 8, wherein the first transistor comprises a source and a drain; the first recess does not overlap either of the source and the drain in a direction perpendicular to a plane in which the substrate lies.

12. The ion detection device according to claim 5, wherein the first transistor comprises a first gate, an active layer, and a second gate; the first gate being between the substrate and the active layer, the second gate being on a side of the active layer distal to the substrate; The ion detection device further comprises a dielectric layer between the second gate and the blocking layer. The dielectric layer comprises a first via, and the blocking structure is electrically connected to the second gate through the first via.

13. The ion detection device of claim 1, wherein: The ion-sensitive layer is in direct contact with the blocking layer.

14. The ion detection device of claim 1, wherein: The material of the blocking layer comprises a metal.

15. The ion detection device of claim 14, wherein, The blocking layer has electrical conductivity.

16. The ion detection device of claim 1, wherein: The first transistor comprises a source and a drain; The ion detection device further comprises a first dielectric layer covering the source and the drain; The blocking layer is located on a side of the first dielectric layer away from the substrate.

17. The ion detection device of claim 1, wherein, Further comprising: a reference electrode located on a side of the circuit layer away from the substrate; and 18. The ion detection device of claim 17, wherein: In a direction perpendicular to a plane in which the substrate is located, the reference electrode overlaps the ion-sensitive layer; The ion detection device further comprises a first insulating layer between the reference electrode and the ion-sensitive layer.

19. The ion detection device of claim 17, wherein: The reference electrode does not overlap the ion-sensitive layer.

20. The ion detection device of claim 19, wherein: The reference electrode is in the same layer as the first blocking portion and is spaced apart from the first blocking portion.

21. The ion detection device of claim 1, wherein: The ion detection device further comprises a microfluidic module comprising a microfluidic channel in communication with the first via.

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