Long-wave infrared circular polarization detection array device, detection equipment and electronic equipment

Abstract

The invention discloses a long-wave infrared circular polarization detection array device, detection equipment and electronic equipment, relates to the technical field of optical detection, and solves the technical problems of high manufacturing process requirements and limited integration level. According to the technical key points, the long-wave infrared circular polarization detection array device comprises detection units arranged in an array mode, each detection unit comprises a dielectric layer, a corrosion barrier layer is arranged on the upper surface of each dielectric layer, and a chiral metasurface array is arranged on the upper surface of each corrosion barrier layer; a readout circuit is arranged below the dielectric layer, and the readout circuit is connected with the dielectric layer through an indium column; the chiral metasurface array comprises a minimum array pattern, and the minimum array pattern is arranged on the upper surface of the corrosion barrier layer in a continuous linear array mode to form the chiral metasurface array.

Description

Technical Field

[0001] This invention relates to the field of optical detection technology, specifically to a long-wave infrared circular polarization detection array device, detection equipment, and electronic equipment. Background Technology

[0002] Long-wave infrared (LWIR) bands are widely used in environmental monitoring, gas detection, security surveillance, and medical imaging. Compared to traditional intensity and linear polarization detection, circular polarization detection provides richer and more comprehensive optical information, helping to identify concealed objects or detect minute optical features on target surfaces, thereby enhancing image analysis and target recognition capabilities.

[0003] With the increasing demand for high-precision and high-efficiency detection, traditional circular polarization detection systems relying on discrete optical elements are gradually revealing their limitations. Traditional systems are bulky and complex, making it difficult to meet the requirements of miniaturization and real-time performance. Therefore, the research and application of focal plane array (DoFPA) technology has become a development trend. By directly integrating chiral structures with circular polarization selectivity onto the detection unit, DoFPA technology can achieve highly integrated, real-time circular polarization detection, significantly reducing equipment size and increasing detection speed. It can acquire complete polarization information in a single image, providing higher detection accuracy.

[0004] Alongside this, GaAs / AlGaAs quantum well materials have demonstrated significant advantages in the fabrication of large-area long-wavelength infrared detectors. Compared to mercury cadmium tellurium (HgCdTe) materials, GaAs / AlGaAs quantum well materials not only possess better material uniformity but can also be manufactured using mature III-V semiconductor processes. Their fabrication process is stable and cost-effective, making them particularly suitable for mass production. Furthermore, quantum well materials exhibit stable performance in the long-wavelength infrared band, and by adjusting the barrier height and well width of the quantum well, the detection wavelength can be precisely controlled, avoiding the wavelength inhomogeneity issues present in mercury-based materials. Therefore, GaAs / AlGaAs quantum well detectors demonstrate stronger industrialization advantages in achieving high performance, low cost, and integration of large-area detector arrays, making them particularly suitable for long-wavelength infrared applications.

[0005] However, long-wave infrared circularly polarized focal plane array devices based on GaAs / AlGaAs quantum wells still face several challenges in actual manufacturing. In particular, infrared detection arrays often use flip-chip technology to bond the infrared detection chip to the readout integrated circuit (ROIC). While this helps to improve integration, it also brings some technical difficulties.

[0006] First, considering the micro-nano structure design between different detection units, optical crosstalk becomes a prominent issue. Signal interference between pixels may affect the accuracy of polarization information and reduce detection performance. Secondly, flip-chip technology requires precise alignment between the circular polarization selectivity structure and the detection pixel. Misalignment of the structure can lead to misalignment between the polarization selectivity structure and the detection unit, affecting the detection accuracy. Finally, quantum well infrared detectors (QWIPs) exhibit significant anisotropic absorption characteristics, especially in n-type doped quantum wells, where electronic transitions depend on the photoelectric field component parallel to the quantum well growth direction. When designing integrated detectors, it is necessary to consider both the anisotropic absorption characteristics of QWIPs and improve the circular polarization extinction ratio (CPER). CPER is defined as the ratio of the light responses produced by a photodetector when it operates with two circularly polarized light incident with different rotation directions. It determines the detector's selective response to circularly polarized light and directly affects its polarization detection accuracy and sensitivity.

[0007] Therefore, effectively solving these problems and optimizing the design and process are key to the further development of integrated long-wave infrared circular polarization detector manufacturing technology.

[0008] The technical paper "Circular Polarimetric Imaging with a Metamaterial Integrated Long-Wavelength Infrared Focal Plane Array," published in 2024, presents a checkerboard-patterned chiral metasurface array that improves the circular polarization extinction ratio and peak response speed. However, its integration density is limited, and the checkerboard layout places high demands on nanofabrication technology. Summary of the Invention

[0009] The purpose of this invention is to provide: A long-wave infrared circular polarization detection array device and related technologies are disclosed to achieve high-efficiency circular polarization detection. By optimizing the micro-nano structure design, the manufacturing process is simplified, the integration is improved, and at the same time, it is easier to mass-produce and accurately align.

[0010] Terminology Explanation: Unless otherwise defined, all technical terms used herein have the same meanings as commonly understood by one of ordinary skill in the art to which this subject matter pertains. Unless otherwise stated, all patents, patent inventions, and disclosures cited throughout this document are incorporated herein by reference in their entirety. Where multiple definitions exist for terms herein, the definitions provided in this chapter shall prevail.

[0011] It should be understood that the above brief description and the following detailed description are exemplary and for illustrative purposes only, and do not limit the subject matter of the invention in any way. In this invention, the singular is used in conjunction with the plural unless otherwise specifically stated. It should also be noted that, unless otherwise stated, the use of “or” or “or” means “and / or”. Furthermore, the use of the term “comprising” and other forms such as “including,” “containing,” and “contains” are not limiting.

[0012] Unless specifically defined herein, the use of various commercially available products herein employs standard techniques. For example, they may be implemented using the manufacturer's instructions for use, or in accordance with methods known in the art or the description of this invention. The techniques and methods described herein can generally be implemented according to conventional methods well known in the art, based on the descriptions in the various general and more specific documents cited and discussed in this specification.

[0013] The terms “optional / arbitrary” or “optionally / arbitrarily” mean that the event or situation described below may or may not occur, including both the occurrence and non-occurrence of the event or situation.

[0014] In a first aspect, the present invention provides: a long-wave infrared circular polarization detection array device, comprising an array of detection units, wherein the detection unit includes: A dielectric layer, wherein a corrosion barrier layer is disposed on the upper surface of the dielectric layer, and a chiral metasurface array is disposed on the upper surface of the corrosion barrier layer; A readout circuit is disposed below the dielectric layer, and the readout circuit is connected to the dielectric layer through an indium pillar; The chiral metasurface array includes a minimum array pattern, which is arranged in a continuous linear array on the upper surface of the corrosion barrier layer to form the chiral metasurface array.

[0015] Furthermore, the chiral metasurface array is one of a left-handed circularly polarized light detector array and a right-handed circularly polarized light detector array; Along the X direction, adjacent detection units are arranged in an alternating pattern of left-handed circularly polarized light detection arrays and right-handed circularly polarized light detection arrays; Along the Y direction, adjacent detection units are arranged in the same linear array.

[0016] Furthermore, the minimum array pattern of both the left-hand circularly polarized light detector array and the right-hand circularly polarized light detector array is Z-shaped.

[0017] Furthermore, the dimensions of the minimum array pattern are as follows: the total width W is 2.5 μm, the total length L is 3.5 μm, the pattern width ΔW is 0.45α μm, and the contact width d between adjacent minimum array patterns is 0.2α μm, where α is a number between 0.8 and 2.2.

[0018] Furthermore, the material of the chiral metasurface array is a conductive metallic material with a negative real part and an imaginary part of the dielectric constant in the long-wave infrared band, ranging from 500 to 3000.

[0019] Furthermore, the material of the chiral metasurface array is one of gold, silver, or an alloy.

[0020] Furthermore, the chiral metasurface array is made of gold and uses titanium as the adhesive layer, wherein the thickness of the gold layer is 54 nm and the thickness of the titanium adhesive layer is 6 nm.

[0021] Furthermore, the corrosion barrier layer is made of aluminum gallium arsenide and has a thickness of 100 nm.

[0022] Furthermore, the dielectric layer includes an upper electrode layer and a lower electrode layer, the upper electrode layer is disposed below the lower electrode layer, and a quantum well layer is disposed between the upper electrode layer and the lower electrode layer; A back metal reflective layer is disposed on the lower surface of the upper electrode layer; the indium pillar includes a first indium pillar and a second indium pillar, the first indium pillar is used to connect the readout circuit and the back metal reflective layer, and the second indium pillar is used to connect the readout circuit and the lower electrode layer.

[0023] Furthermore, both the upper electrode layer and the lower electrode layer are n-type gallium arsenide electrodes with a thickness of 250 nm and a doping concentration of 2 × 10⁻⁶. 17 cm -3 .

[0024] Furthermore, the quantum well layer is a 7-layer composite structure of gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs). In each composite layer, the thickness of GaAs is 5 nm to 6 nm, and the thickness of AlGaAs is 45 nm to 50 nm. The doping concentration of both GaAs and AlGaAs is 5 × 10⁻⁶. 18 cm -3 .

[0025] Furthermore, the material of the back metal reflective layer has an electrical conductivity of not less than 4 × 10⁻⁶. 7 For metal materials with a thickness of S / m, the thickness of the back metal reflective layer is not less than twice the skin depth of the electromagnetic wave in its corresponding metal material.

[0026] Furthermore, the material of the back metal reflective layer is gold, and titanium is used as the adhesive layer material. The thickness of the gold layer is 100 nm, and the thickness of the titanium adhesive layer is 8 nm.

[0027] Secondly, the present invention provides a detection device, including the aforementioned long-wave infrared circular polarization detection array device.

[0028] Thirdly, the present invention provides an electronic device including the aforementioned long-wave infrared circular polarization detection array device.

[0029] Compared with the prior art, the present invention has at least the following beneficial effects: In this invention, the chiral metasurface array is arranged in a linear array configuration, compared to the checkerboard layout in existing technologies. Linear arrays allow for more efficient placement of microstructures within a unit area, reducing unnecessary blank areas, thereby improving integration and reducing overall device size. In high-density arrays, checkerboard layouts can lead to optical crosstalk between adjacent units, especially plasmonic resonance modes with propagation modes, which typically exhibit different modes of optical crosstalk around the perimeter. Linear arrays provide a more linear light transmission path, reducing crosstalk between detection units. During manufacturing, linear arrays do not require staggered arrangements; microstructures can be arranged along a one-dimensional direction, reducing the demands on nanofabrication techniques, lowering complexity, and improving overall manufacturing precision. Compared to checkerboard layouts, linear arrays offer a simpler arrangement, simplifying the optical alignment process and significantly reducing the requirements for the alignment accuracy of circular polarization selection structures and detection pixels.

[0030] In addition, the chiral metasurface array adopts a coherent linear array layout, which helps to optimize the light field distribution between adjacent detection units, improve the light field uniformity at the pixel edge, reduce edge effects, and thus improve the overall detection accuracy. Attached Figure Description

[0031] Figure 1 This is a schematic diagram of the detection unit structure of the long-wave infrared circular polarization detection array device of the present invention; Figure 2 A schematic diagram of the structure of a chiral metasurface array for a long-wave infrared circular polarization detection array device; Figure 3 This is a schematic diagram of the structure of the smallest array pattern; Figure 4 The absorption spectra of the left-hand circularly polarized light detector linear array unit material for left-hand and right-hand circular light, and the CPER spectra at the corresponding wavelengths are shown. Figure 5 The parameter scan diagram shows the effect of the structural scaling factor α on the absorption of left-handed circularly polarized light by the detector linear array unit. Figure 6 The parameter scan diagram shows the effect of the structural scaling factor α on the absorption of right-hand circularly polarized light by the detector linear array unit. Figure 7 The parameter scan diagram shows the effect of the structural scaling factor α on the photon responsivity of the detector linear array unit. Figure 8 This is a schematic diagram of the light field distribution across the XY section of the detection unit; Figure 9 This is a schematic diagram of the material absorption distribution at the XY cross section of the detection unit.

[0032] Explanation of reference numerals in the attached figures: 1. Chiral metasurface array, 2. Corrosion barrier layer, 3. Lower electrode layer, 4. Quantum well layer, 5. Upper electrode layer, 6. Back metal reflective layer, 7. First indium pillar, 8. Solder joint, 9. Readout circuit, 10. Second indium pillar, A. Left-handed circularly polarized light detector array, B. Right-handed circularly polarized light detector array. Detailed Implementation

[0033] The following non-limiting embodiments are intended to enable those skilled in the art to gain a more comprehensive understanding of the present invention, but do not limit the invention in any way. The following content is merely an exemplary description of the scope of protection claimed by the present invention, and those skilled in the art can make various changes and modifications to the present invention based on the disclosed content, and such changes should also fall within the scope of protection claimed by the present invention.

[0034] Example 1 This embodiment provides a long-wave infrared circular polarization detection array device, such as... Figure 1 As shown, a detection unit including an array is provided, the detection unit comprising: A dielectric layer, wherein a corrosion barrier layer 2 is disposed on the upper surface of the dielectric layer, and a chiral metasurface array 1 is disposed on the upper surface of the corrosion barrier layer 2; A readout circuit 9 is disposed below the dielectric layer, and the readout circuit 9 is connected to the dielectric layer through an indium pillar; The chiral metasurface array 1 includes a minimum array pattern, which is arranged in a continuous linear array on the upper surface of the corrosion barrier layer 2 to form the chiral metasurface array 1.

[0035] The dielectric layer includes an upper electrode layer 5 and a lower electrode layer 3. The upper electrode layer 5 is disposed below the lower electrode layer 3, and a quantum well layer 4 is disposed between the upper electrode layer 5 and the lower electrode layer 3. The lower surface of the upper electrode layer 5 is provided with a back metal reflective layer 6; the indium pillars include a first indium pillar 7 and a second indium pillar 10. The first indium pillar 7 is used to connect the readout circuit 9 and the back metal reflective layer 6, and a solder joint 8 is provided between the lower surface of the first indium pillar 7 and the readout circuit 9. The second indium pillar 10 is used to connect the readout circuit 9 and the lower electrode layer 3, and a solder joint 8 is provided between the lower surface of the second indium pillar 10 and the readout circuit 9. A solder joint 8 is also provided between the upper surface of the second indium pillar 10 and the lower surface of the lower electrode layer 3.

[0036] Specifically, the detection unit is square, with dimensions of 30μm × 30μm. The lower surface of the lower electrode layer 3 has a step, making its lower surface area smaller than its upper surface area. The quantum well layer 4 covers the lower surface of the lower electrode layer 3, and its dimensions are 27μm × 27μm. The upper surface of the second indium pillar 10 is connected to the stepped surface of the lower electrode layer 3 via a welding point 8.

[0037] The chiral metasurface array 1 is made of a high-conductivity metallic material with a negative real part and an imaginary part of the dielectric constant in the long-wave infrared band, ranging from 500 to 3000. This includes, but is not limited to, gold, silver, and alloys. In this embodiment, the chiral metasurface array 1 is made of gold, and titanium is used as the adhesive layer. The thickness of the gold layer is 54 nm, and the thickness of the titanium adhesive layer is 6 nm.

[0038] The corrosion barrier layer 2 is made of aluminum gallium arsenide and has a thickness of 100 nm.

[0039] Both the upper electrode layer 5 and the lower electrode layer 3 are n-type gallium arsenide electrodes with a thickness of 250 nm and a doping concentration of 2 × 10⁻⁶. 17 cm -3 .

[0040] The quantum well layer 4 is a 7-layer composite structure of gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs). In each composite layer, the thickness of gallium arsenide is 5 nm to 6 nm, and the thickness of AlGaAs is 45 nm to 50 nm. The doping concentration of both gallium arsenide and AlGaAs is 5 × 10⁻⁶. 18 cm -3 .

[0041] The material of the back metal reflective layer 6 has an electrical conductivity of not less than 4 × 10⁻⁶. 7 For metal materials with a thickness of S / m, the thickness of the back metal reflective layer 6 is not less than twice the skin depth of the electromagnetic wave in its corresponding metal material.

[0042] In this embodiment, the material of the back metal reflective layer 6 is gold, and titanium is used as the adhesive layer material. The thickness of the gold layer is 100nm, and the thickness of the titanium adhesive layer is 8nm.

[0043] In other embodiments, the dielectric layer may be replaced with other infrared detection materials.

[0044] The long-wave infrared circular polarization detector array device provided by this invention adopts a metal-dielectric-metal device configuration. The upper chiral metal structure can not only excite plasmonic modes, thereby enhancing the absorption of the quantum well material in the middle dielectric layer, but also effectively achieve selective absorption of circularly polarized light. The lower metal layer plays a necessary role in electric field coupling in this structure. In particular, considering the anisotropic absorption characteristics of the quantum well material, it mainly absorbs light along the Z direction, thereby optimizing the light coupling efficiency and detector performance.

[0045] like Figure 2 As shown, the chiral metasurface array 1 is either a left-handed circularly polarized light detector array A or a right-handed circularly polarized light detector array B. Along the X direction, adjacent detector units are arranged in an alternating manner with left-handed circularly polarized light detector array A and right-handed circularly polarized light detector array B. Along the Y direction, adjacent detector units are arranged in the same array form, that is, in the Y direction, adjacent detector units are either all left-handed circularly polarized light detector array A or all right-handed circularly polarized light detector array B.

[0046] Chiral metamaterials are arranged in a linear array on the surface of each detector unit. Compared to a checkerboard layout, linear arrays can more efficiently arrange microstructures within a unit area, reducing unnecessary blank areas, thereby improving integration and reducing the overall device size. In high-density arrays, checkerboard layouts can lead to optical crosstalk between adjacent units, especially plasmonic resonance modes with propagation modes, which typically exhibit different modes of optical crosstalk around the perimeter. Linear arrays provide a more linear light transmission path, reducing crosstalk between detector units. During manufacturing, linear arrays do not require staggered arrangement; microstructures can be arranged along a one-dimensional direction, reducing the demands on nanofabrication techniques, lowering complexity, and improving overall manufacturing precision. Compared to checkerboard layouts, linear array structures have a simpler arrangement, which helps simplify the optical alignment process and significantly reduces the requirements for the alignment accuracy of circular polarization selection structures and detector pixels.

[0047] The minimum array pattern of both the left-hand circularly polarized light detector array A and the right-hand circularly polarized light detector array B is Z-shaped. For example... Figure 3 As shown, Figure 3 The lower center array is a left-handed circularly polarized light detector linear array A, and the upper array is a right-handed circularly polarized light detector linear array B; the minimum array patterns of the two are symmetrical and have the same size. The dimensions of the minimum array pattern are: total width W = 2.5 μm, total length L = 3.5 μm, pattern width ΔW = 0.45α μm, and contact width d between adjacent minimum array patterns = 0.2α μm, where α takes a value between 0.8 and 2.2.

[0048] The principle of circularly polarized detection using chiral metamaterials can be simply summarized as follows: Circularly polarized light refers to light whose electric field vector rotates along the direction of propagation. When this rotation matches the specific symmetry of a chiral structure (plasmon material, such as a metal), it can induce plasmon excitation and local resonance, enhancing the absorption of light in that direction. When the size of the chiral metamaterial changes, it alters the frequency of the local resonance on the material surface, causing a shift in the absorption peak. Simultaneously, the excitation capability of surface plasmons also changes with size variations, thus affecting the coupling degree between light and the material, and consequently, the material's absorptivity.

[0049] like Figure 4 The image shown is a CPER spectrum obtained using electromagnetic simulation software. Figure 4 The results shown correspond to structural parameters where α is 1. This represents the absorptivity of left-handed circularly polarized light. It represents the absorptivity of right-handed circularly polarized light, with an absorption peak at 10.63 μm. The CPER (photon responsivity) can reach up to 7.16, and it has a circular extinction ratio greater than 1 in the 9.5-11.5 μm wavelength range.

[0050] Figures 5 to 7 The simulations show that adjusting the structural scaling factor α can alter the absorption characteristics of different detector units. These simulations are based on the absorptivity of a left-handed circularly polarized light detector array A. The results demonstrate that the chiral structure exhibits good circular polarization-selective absorption enhancement in the 9.5-11.5 μm band, with significantly better absorption of left-handed circularly polarized light compared to right-handed circularly polarized light. This also reflects the effect of varying the size of the designed chiral metamaterial on the absorptivity and absorption peak position, revealing a structural parameter with the highest CPER.

[0051] Figure 8 In this design, the chiral structure of the Z-shaped antenna (minimum array pattern) decomposes the propagation process of incident circularly polarized light into TM / TE wave components. Under matched polarization states, constructive interference of surface plasmons is excited, forming a strong electric field Z component at the quantum well interface that can be absorbed by the quantum well material. When left-handed circularly polarized light is incident, the corresponding electric field Z component excited in the left-handed circularly polarized light detector array region is significantly stronger than that in the right-handed circularly polarized light detector array region.

[0052] like Figure 9As shown, from the perspective of electromagnetic power loss density per unit volume, when left-handed circularly polarized light is incident, the quantum well material in the left-handed circularly polarized light detection region can efficiently absorb and convert it into photocurrent. This efficient absorption is mainly due to the effective coupling between the chiral structure and the photoelectric field, especially the formation of a strong electric field component at the quantum well interface, thereby enhancing the detection capability of circularly polarized light. In addition, the use of a coherent linear array layout helps to optimize the light field distribution between adjacent detection units, improve the light field uniformity at pixel edges, reduce edge effects, and thus improve the overall detection accuracy.

[0053] Example 2 This embodiment provides a detection device, including the aforementioned long-wave infrared circular polarization detection array device. The detection device can be an infrared detection device or a lidar, etc.

[0054] Example 3 This embodiment provides an electronic device, including the aforementioned long-wave infrared circular polarization detection array device. The electronic device can be an optical communication device for detecting and converting optical signals; it can also be a consumer electronic device, such as a smartphone camera module or facial recognition system; or it can be an industrial and scientific research device, including industrial automation sensors, precision measuring instruments, and astronomical observation equipment.

[0055] The above specific embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to examples, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the scope of the technical solutions of the present invention, and all such modifications or substitutions should be covered within the protection scope of the present invention.

Claims

1. A long-wave infrared circular polarization detection array device, comprising an array of detection units, characterized in that, The detection unit includes: A dielectric layer, wherein a corrosion barrier layer is disposed on the upper surface of the dielectric layer, and a chiral metasurface array is disposed on the upper surface of the corrosion barrier layer; A readout circuit is disposed below the dielectric layer, and the readout circuit is connected to the dielectric layer through an indium pillar; The chiral metasurface array includes a minimum array pattern, which is arranged in a continuous linear array on the upper surface of the corrosion barrier layer to form the chiral metasurface array.

2. The long-wave infrared circular polarization detection array device according to claim 1, characterized in that, The chiral metasurface array is one of a left-handed circularly polarized light detector linear array and a right-handed circularly polarized light detector linear array; Along the X direction, adjacent detection units are arranged in an alternating pattern of left-handed circularly polarized light detection arrays and right-handed circularly polarized light detection arrays; Along the Y direction, adjacent detection units are arranged in the same linear array.

3. The long-wave infrared circular polarization detection array device according to claim 2, characterized in that, The minimum array pattern of both the left-hand circularly polarized light detector array and the right-hand circularly polarized light detector array is Z-shaped.

4. The long-wave infrared circular polarization detection array device according to claim 3, characterized in that, The dimensions of the minimum array pattern are as follows: total width W is 2.5μm, total length L is 3.5μm, pattern width ΔW is 0.45αμm, and contact width d between adjacent minimum array patterns is 0.2αμm, where α is a number between 0.8 and 2.

2.

5. The long-wave infrared circular polarization detection array device according to claim 1, characterized in that, The chiral metasurface array is made of a conductive metallic material with a negative real part and an imaginary part of dielectric constant in the long-wave infrared band, ranging from 500 to 3000.

6. The long-wave infrared circular polarization detection array device according to claim 5, characterized in that, The material of the chiral metasurface array is one of gold, silver, or an alloy.

7. The long-wave infrared circular polarization detection array device according to claim 6, characterized in that, The chiral metasurface array is made of gold and uses titanium as the adhesive layer, wherein the thickness of the gold layer is 54 nm and the thickness of the titanium adhesive layer is 6 nm.

8. The long-wave infrared circular polarization detection array device according to claim 1, characterized in that, The corrosion barrier layer is made of aluminum gallium arsenide and has a thickness of 100 nm.

9. The long-wave infrared circular polarization detection array device according to claim 1, characterized in that, The dielectric layer includes an upper electrode layer and a lower electrode layer, the upper electrode layer is disposed below the lower electrode layer, and a quantum well layer is disposed between the upper electrode layer and the lower electrode layer; A back metal reflective layer is disposed on the lower surface of the upper electrode layer; the indium pillar includes a first indium pillar and a second indium pillar, the first indium pillar is used to connect the readout circuit and the back metal reflective layer, and the second indium pillar is used to connect the readout circuit and the lower electrode layer.

10. The long-wave infrared circular polarization detection array device according to claim 9, characterized in that, Both the upper and lower electrode layers are n-type gallium arsenide electrodes with a thickness of 250 nm and a doping concentration of 2 × 10⁻⁶. 17 cm -3 .

11. The long-wave infrared circular polarization detection array device according to claim 9, characterized in that, The quantum well layer is a 7-layer composite structure of gallium arsenide (GaAs) and aluminum gallium arsenide (AlGaAs). In each layer, the thickness of GaAs is 5 nm to 6 nm, and the thickness of AlGaAs is 45 nm to 50 nm. The doping concentration of both GaAs and AlGaAs is 5 × 10⁻⁶. 18 cm -3 .

12. The long-wave infrared circular polarization detection array device according to claim 9, characterized in that, The material of the back metal reflective layer has an electrical conductivity of not less than 4 × 10⁻⁶. 7 For metal materials with a thickness of S / m, the thickness of the back metal reflective layer is not less than twice the skin depth of the electromagnetic wave in its corresponding metal material.

13. The long-wave infrared circular polarization detection array device according to claim 12, characterized in that, The material of the back metal reflective layer is gold, and titanium is used as the adhesive layer material. The thickness of the gold layer is 100 nm, and the thickness of the titanium adhesive layer is 8 nm.

14. A detection device, characterized in that, Includes the long-wave infrared circular polarization detection array device according to any one of claims 1-13.

15. An electronic device, characterized in that, Includes the long-wave infrared circular polarization detection array device according to any one of claims 1-13.

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