Ion laser ion source assisted magnetron sputtering coating system and process

Abstract

The application belongs to the technical field of TGV glass deep hole coating technology, and particularly relates to an ION laser ion source assisted magnetron sputtering coating system and process. The system comprises a vacuum chamber and a substrate arranged in the vacuum chamber, and is characterized in that further comprises a central vertical target and three eccentric dynamic angle targets distributed on the substrate. The central vertical target is vertically arranged at the central position of the substrate, the three eccentric dynamic angle targets are arranged in an inclined manner with the substrate, and the three eccentric dynamic angle targets are arranged in a ring around the periphery of the central vertical target. The three eccentric dynamic angle targets form an equilateral triangle, and the central vertical target coincides with the central position of the equilateral triangle. The system further comprises an ion main light source arranged at the central position directly above the substrate. The system further comprises three ION laser ion auxiliary sources arranged on the substrate, and each ION laser ion auxiliary source is arranged at the center line of each two adjacent eccentric dynamic angle targets. The application improves the control precision of the surface uniformity U% distribution.

Description

Technical Field

[0001] This invention belongs to the field of TGV glass deep hole coating technology for semiconductor packaging, specifically relating to an ION laser ion source-assisted magnetron sputtering coating system and process. Background Technology

[0002] Through Glass Via (TGV) is a key technology in the fields of microelectronics and optoelectronics. It enables high-density electrical connections between chips or device layers by creating vertically interconnected conductive vias in a glass substrate.

[0003] Currently, in the deep hole structure of TGV (Through Glass Via), during seed layer sputtering, the ratio of hole depth to hole width (depth-to-width ratio) is often as high as 9:1, which causes sputtering particles to encounter shielding effects and collision scattering when entering the hole, resulting in a significant decrease in the coating thickness in the middle and bottom sections of the hole.

[0004] Collision scattering is also an important factor affecting coating uniformity. During their flight, sputtered particles collide with gas molecules or other particles, resulting in energy loss and changes in direction, which further reduces the uniformity of the coating within the holes.

[0005] Traditional sputtering methods (single-target or dual-target) struggle to achieve uniform coating in TGV vias with high aspect ratios. Surface uniformity (U%) is a crucial indicator of coating quality, while in-hole coating capability (SC%) and DSC%) reflect the filling effect and uniformity of the coating within the via.

[0006] Traditional sputtering methods (single-target or dual-target) face bottlenecks in improving surface uniformity (U%) and in-hole coating capability (single-sided coating step coverage SC%, double-sided coating step coverage DSC%). At the same time, the coating time is long, the production efficiency is low, and the process control flexibility is poor.

[0007] To address the technical problem of "the hole bottom shielding effect and particle dissipation in the traditional TGV structure causing a significant decrease in the coating thickness in the middle and bottom sections of the hole", this invention provides an ION laser ion source-assisted magnetron sputtering coating system. Summary of the Invention

[0008] To address the technical problem of "the hole bottom shielding effect and particle dissipation in traditional TGV structures causing a significant decrease in coating thickness in the middle and bottom sections of the hole," this invention provides the following technical solution:

[0009] Firstly,

[0010] This invention provides an ION laser ion source-assisted magnetron sputtering coating system, including a vacuum chamber and a substrate disposed within the vacuum chamber. The system is characterized by further including a central vertical target and three eccentric dynamic tilt targets distributed on the substrate. The central vertical target is vertically disposed at the center of the substrate, and the three eccentric dynamic tilt targets are inclined relative to the substrate and arranged in a ring around the central vertical target, forming an equilateral triangle. The center of the central vertical target coincides with the center of this equilateral triangle.

[0011] It also includes an ion main light source positioned at the center of the top of the substrate, which emits high-energy laser pulses with wavelengths of 193nm-248nm;

[0012] It also includes three ION laser ion auxiliary sources disposed on the substrate, with one ION laser ion auxiliary source disposed at the line connecting the centers of every two adjacent eccentric dynamic tilt angle targets.

[0013] Furthermore, the center vertical target base distance TSD is 200mm.

[0014] Furthermore, the incident angle of the central vertical target is 0°.

[0015] Furthermore, the two eccentric dynamic tilt targets located on the inner side away from the vacuum chamber inlet have a target-to-base distance (TSD) of 150 mm, while the one eccentric dynamic tilt target located on the outer side near the vacuum chamber inlet has a target-to-base distance (TSD) of 200 mm.

[0016] Furthermore, the radius of the three eccentric dynamic tilt targets is R=250mm.

[0017] Furthermore, the eccentric dynamic tilt target is tilted at an angle of 15° relative to the substrate, and the dynamic scanning range is ±5°.

[0018] Furthermore, the ion main source emits high-energy laser pulses with wavelengths of 193nm to 248nm; the ION laser ion auxiliary source can be a high-frequency pulsed laser with a wavelength of 355nm.

[0019] Furthermore, the substrate can be rotated at a speed of 10~30 RPM.

[0020] Furthermore, the tilt angles of the three eccentric dynamic tilt targets are adjustable.

[0021] Furthermore, the tilt angles of the three eccentric dynamic tilt targets are 15±5°.

[0022] Secondly,

[0023] This invention provides an ION laser ion source-assisted magnetron sputtering coating process, which is implemented using the system described above. The process includes:

[0024] Place the product to be processed on the substrate;

[0025] Controlling the vacuum environment of the vacuum chamber;

[0026] The main ion source and three ION laser ion auxiliary sources are controlled to emit ion beams.

[0027] A central vertical target and three eccentric dynamic tilt targets are used for precipitation to prepare coatings or modify the surface of the product to be processed.

[0028] Compared with the prior art, the present invention has the following beneficial effects:

[0029] This invention is based on the core principle of multi-target dynamic tilt magnetron sputtering combined with synchronous ion source-assisted energy injection. It enables the coverage angle to be adjusted through a central vertical target and three sets of eccentric dynamic tilt targets. Combined with three-point distributed ION laser ion-assisted source and ion main source excitation technology, the deposited particles have multi-directional kinetic energy, adjustable energy distribution and deep hole orientation ability. This significantly improves the hole bottom shielding effect and particle dissipation problem in traditional TGV structures, and increases the coating thickness in the middle and bottom sections of the hole.

[0030] The high-energy excitation (193~355nm) provided by the ion main light source and three ION laser ion-assisted sources causes atomic recombination and surface energy enhancement in the deposition region within the TGV deep holes, thereby promoting particle adhesion and densification within the holes. At the same time, the continuous adjustment of the dynamic tilt angle of the eccentric target by ±5° provides deposition angle compensation and distribution scanning capability, achieving high film uniformity within the TGV deep holes and through-hole coating.

[0031] This invention is applied to advanced semiconductor packaging processes, particularly for large-area glass substrates (26-28 inches) and high-density TGV via structures. Through a four-target + ION laser ion source-assisted system configuration, stable and efficient metal seed layer coverage can be achieved at a depth of 225 μm within the vias while maintaining high-throughput coating capacity.

[0032] Ion laser source-assisted technology is particularly suitable for coating porous structures and curved substrates. It not only improves the uniformity and adhesion of the film layer, but also enhances the conductivity consistency of the electroplating seed layer and the success rate of subsequent hole filling, while reducing the formation of bubbles and voids. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of the magnetron sputtering coating system of the present invention;

[0034] Figure 2 for Figure 1 The right view;

[0035] Figure 3 for Figure 1 Top view;

[0036] Figure 4 This is a schematic diagram of the magnetron sputtering coating system of the present invention, omitting the vacuum chamber;

[0037] Figure 5 This is a schematic diagram showing the configuration of the ION laser ion source, the central vertical target, and the eccentric dynamic tilt target of the present invention.

[0038] Figure 6 This is a film thickness distribution diagram of the present invention (U% = ±1%).

[0039] Figure label:

[0040] 1. Vacuum chamber; 11. Vacuum chamber inlet; 2. Substrate; 3. Central vertical target; 4. Eccentric dynamic tilt target; 5. Ion main light source; 6. ION laser ion auxiliary source. Detailed Implementation

[0041] The technical solution of the present invention will be clearly described below with reference to the accompanying drawings. Obviously, the described embodiments are not all embodiments of the present invention. All other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present invention.

[0042] It should be noted that the terms "center", "upper", "lower", "horizontal", "left", "right", "front", "rear", "lateral", "longitudinal", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention.

[0043] Example 1

[0044] Combination Figures 1-4 As shown, the present invention provides an ION laser ion source-assisted magnetron sputtering coating system, including a vacuum chamber 1, a substrate 2 disposed in the vacuum chamber 1, a central vertical target 3 and three eccentric dynamic tilt targets 4 distributed on the substrate 2. The central vertical target 3 is vertically disposed at the center of the substrate 2, and the three eccentric dynamic tilt targets 4 are inclined to the substrate 2 and are arranged in a ring around the central vertical target 3. The three eccentric dynamic tilt targets 4 form an equilateral triangle (that is, the target arrangement adopts a circular equidistant 120° distribution), and the central vertical target 3 coincides with the center of the equilateral triangle.

[0045] It also includes an ion main light source 5 positioned at the center of the top of the substrate 2;

[0046] It also includes three ION-assisted laser sources 6 disposed on the substrate 2, with one ION-assisted laser source 6 disposed at the center line connecting two adjacent eccentric dynamic tilt targets 4.

[0047] The target surfaces of the central vertical target 3 and the three eccentric dynamic tilt targets 4 are 8-inch flat surfaces.

[0048] Target-to-substrate distance (TSD) is a core parameter in magnetron sputtering, referring to the vertical distance between the target surface and the substrate (or sample stage).

[0049] Let the target-base distance TSD of the central vertical target 3 be 200 mm. The target-base distance TSD of the central vertical target 3 is the vertical distance between the surface of the central vertical target 3 and the substrate 2. The incident angle of the central vertical target 3 is 0°.

[0050] Two eccentric dynamic tilting targets 4 located on the inner side away from the vacuum chamber inlet 11 are set with a target-to-base distance TSD of 150 mm, and one eccentric dynamic tilting target 4 located on the outer side near the vacuum chamber inlet 11 is set with a target-to-base distance TSD of 200 mm.

[0051] like Figure 5 As shown, the three eccentric dynamic tilt targets 4 are arranged with a radius R = 250 mm, where R is the distance from the center of the eccentric dynamic tilt target 4 to the center of the central vertical target 3. The eccentric dynamic tilt target 4 is tilted at an angle of 15° relative to the substrate 2 and can be dynamically scanned at ±5°. Figure 5 In this context, ION refers to the ION laser ion-assisted source 6 of the present invention.

[0052] The ION laser-assisted ion source 6 can use a high-frequency pulsed laser with a wavelength of 355nm to irradiate the deposition region in the TGV deep-hole structure with high energy, promoting surface recombination and increased kinetic energy of the deposited particles. This technology can improve the grain density of the film, reduce the internal stress of the film, and enhance the adhesion and orientation of the deposited particles in the deep hole.

[0053] The magnetron sputtering coating system integrates an optical module (three ION laser ion-assisted sources 6) between the central vertical target 3, the eccentric dynamic tilt target 4, and the substrate 2 to achieve dynamic control and directional energy transfer, thereby improving the TGV coating quality.

[0054] The ion main light source 5 emits high-energy laser pulses with wavelengths of 193nm~248nm, which are simultaneously applied to the surface of the substrate 2 to assist in the recombination and diffusion of thin film atoms, improve the density of the coating and the adhesion of the sidewalls, and improve the coating efficiency of the lower section of the hole wall by using an electric field to assist in the control of ion kinetic energy.

[0055] The substrate 2 is rotatable at a speed of 10~30 RPM. In addition, the bottom of the substrate 2 is equipped with a substrate rotation mechanism with a speed of 10~30 RPM, so that the substrate 2 can rotate at a low speed of 10~30 RPM.

[0056] The tilt angles of the three eccentric dynamic tilt targets 4 are adjustable. A dynamic tilt adjustment platform connected to the three eccentric dynamic tilt targets 4 is provided at the bottom of the base plate 2. The tilt angles of the three eccentric dynamic tilt targets 4 can be adjusted by changing the angle of the dynamic tilt adjustment platform.

[0057] The magnetron sputtering system, constructed using four 12-inch targets (one central vertical target 3 and three eccentric dynamically tilted targets 4) assisted by the ION laser ion source of this invention, compared with the structure of the transmission sputtering method, has been verified through multiple sets of simulation experiments. The performance comparison results at a thickness of 1500 nm are shown in Table 1; the obtained film thickness distribution diagram is shown in... Figure 6 As shown.

[0058] Table 1

[0059]

[0060] By rotating the substrate and adjusting the tilt angle of the three eccentric dynamic tilting targets 4, the coating particles can be evenly distributed to each area of ​​the pores at multiple angles and regions. Combined with the ion source to accelerate the reaction and densify the film, the single-sided SC% > 5% and the double-sided DSC% can be increased to more than 8%, while the surface uniformity (U%) is controlled within ±1%.

[0061] The four-target asymmetric configuration of this invention, combined with ion laser source-assisted technology, successfully overcomes the coating bottleneck encountered by traditional sputtering in deep hole structures, and possesses the following significant technical effects and application potential:

[0062] 1. Improved surface uniformity U% distribution control precision: By combining vertical coating of the central vertical target with dynamic angle adjustment of three eccentric dynamic tilt targets, and ION laser ion-assisted source, the difference in film thickness between the center and the edge can be effectively compensated. Actual test results show that U% can be controlled within ±1.0%, achieving near-ideal film thickness uniformity, which is suitable for large-area 14-inch to 16-inch substrates.

[0063] 2. Improved single-sided coating step coverage (SC%): The directional energy compensation of the ion main light source can significantly enhance the kinetic energy of the coated particles entering the deep hole of the TGV. According to single-sided coating simulation and measurement analysis, the SC% can reach more than 5% at a depth of 225μm (when the planar thickness is 1500 nm, the film thickness at 225μm in the deep hole is about 52.5 nm), which is more than 65% higher than the traditional dual-target configuration.

[0064] 3. Enhanced DSC% penetration capability of double-sided coating: With a double-sided continuous coating process, the total time for both sides is controlled within 180-200 minutes, achieving a deep hole symmetry coverage capability of DSC% = 6.2%, and a uniform coating with a film thickness of >90 nm at the midpoint of the deep hole (total thickness of 3000 nm on both sides).

[0065] 4. Reduced coating time and increased production capacity: The dynamic scanning coating mode combined with the high-energy ION laser ion-assisted source significantly improves deposition efficiency. Under the same coating thickness, the process time can be reduced from the original 220-240 minutes to within 70 minutes, increasing production capacity by more than 20%.

[0066] 5. Improved stress and reliability of TGV coating: Ion source-assisted deposition can effectively reduce internal stress in the film layer, avoid stress cracks or peeling, and also significantly improve the thermal stress release of high-density interconnect packaging structures.

[0067] 6. Highly flexible modular structure: This system is designed to support flexible switching between multiple targets and angles, and can be adapted to various power supplies (DC, RF, HIPIMS) and ion laser source types. In the future, it can be extended to various sputtering processes such as barrier layers, dielectric layers, and bonding layers, and has good process scalability and production line compatibility.

[0068] 7. Wide range of applications: This technology is particularly suitable for advanced packaging processes, including various TGV interconnection requirements such as Chip-on-Wafer, Fan-out, and 2.5D Interposer, improving vertical conductivity and reliability between packaging layers. It can also be applied to glass substrate microvia packaging for high-frequency and high-voltage applications.

[0069] 8. Simulation data verification and reliability analysis: The experiment was conducted using COMSOL and a self-built sputtering model to simulate the thickness distribution and deep hole coating behavior. The U% of the simulation results was ±1.0%. Combined with SEM and FIB profile analysis, the consistency between the physical structure and the simulation was verified to be good, confirming that the multi-target system under ion assistance can stably achieve ultra-high uniformity coating.

[0070] Example 2

[0071] An ION laser ion source-assisted magnetron sputtering coating process, employing the process described in Example 1, includes:

[0072] Place the product to be processed on the substrate;

[0073] Control the vacuum environment of vacuum chamber 1;

[0074] The main ion source 5 and three ION laser ion auxiliary sources 6 are controlled to emit ion beams;

[0075] The central vertical target 3 and three eccentric dynamic tilt targets are used for precipitation to prepare coatings or modify the surface of the product to be processed.

[0076] Specifically, the coating process includes the following key steps:

[0077] 1. Substrate processing and positioning: The glass substrate with TGV deep hole structure is placed on a rotating stage in the vacuum chamber, and a central vertical target and three sets of movable eccentric dynamic tilting targets are set on the target frame system to ensure alignment with the hole position.

[0078] 2. Vacuum pumping and gas introduction: After the system is evacuated to the basic pressure, process gas (such as Ar or Ar / O2 / N2 mixture) is introduced, and the working pressure is adjusted to the range of 0.1-1 Pa;

[0079] 3. Start magneto-controlled target deposition: Start the magneto-controlled power supply of the central vertical target and the eccentric dynamic tilt target, set the target-substrate distance and power conditions, and perform synchronous or alternating deposition;

[0080] 4. Synchronous excitation of ion source: During the deposition process, a 355nm ION laser ion-assisted source and a 193-248nm ion main source with three points are turned on to provide kinetic energy for particle orientation in the pores and excitation for surface recombination.

[0081] 5. Dynamic angle control and rotation scanning: Simultaneously perform eccentric dynamic tilt target ±5° dynamic scanning and substrate rotation of 10~30RPM to achieve full coverage of coating particles under different incident angles;

[0082] 6. Process termination and cooling and unloading: After the target thickness is achieved, turn off the light source and power supply in sequence, and remove the coated finished product after cooling.

[0083] The above technical features constitute the preferred embodiment of the present invention, which has strong adaptability and optimal implementation effect. Non-essential technical features can be added or removed according to actual needs to meet the needs of different situations.

[0084] Finally, it should be noted that the above content is only used to illustrate the technical solution of the present invention, and is not intended to limit the scope of protection of the present invention. Simple modifications or equivalent substitutions made by those skilled in the art to the technical solution of the present invention do not depart from the essence and scope of the technical solution of the present invention.

Claims

1. An ION laser ion source-assisted magnetron sputtering coating system, comprising a vacuum chamber and a substrate disposed within the vacuum chamber, characterized in that, It also includes a central vertical target and three eccentric dynamic tilt targets distributed on the substrate. The central vertical target is vertically positioned at the center of the substrate, and the three eccentric dynamic tilt targets are inclined to the substrate. The three eccentric dynamic tilt targets are arranged around the central vertical target, and the three eccentric dynamic tilt targets form an equilateral triangle. The central vertical target coincides with the center of the equilateral triangle. It also includes an ion main light source positioned at the center of the top of the substrate; It also includes three ION laser ion auxiliary sources disposed on the substrate, with one ION laser ion auxiliary source disposed at the line connecting two adjacent eccentric dynamic tilt angle target centers; The ION laser ion-assisted source uses a high-frequency pulsed laser with a wavelength of 355nm; the ion main light source emits high-energy laser pulses with wavelengths of 193nm~248nm. The two eccentric dynamic tilt targets located on the inner side away from the vacuum chamber inlet have a target-to-base distance (TSD) of 150 mm, while the eccentric dynamic tilt target located on the outer side near the vacuum chamber inlet has a target-to-base distance (TSD) of 200 mm. The radius of the three eccentric dynamic tilt targets is R=250mm; The eccentric dynamic tilt target is tilted at an angle of 15° relative to the substrate, and the dynamic scanning range is ±5°.

2. The ION laser ion source-assisted magnetron sputtering coating system according to claim 1, characterized in that, The center vertical target base distance TSD is 200mm.

3. The ION laser ion source-assisted magnetron sputtering coating system according to claim 2, characterized in that, The incident angle of the central vertical target is 0°.

4. The ION laser ion source-assisted magnetron sputtering coating system according to any one of claims 1-3, characterized in that, The substrate can rotate at a speed of 10~30 RPM.

5. A magnetron sputtering coating system assisted by an ION laser ion source according to any one of claims 1-3, characterized in that, The tilt angle γ of the three eccentric dynamic tilt targets can be adjusted within the range of 10° to 20°.

6. An ION laser ion source-assisted magnetron sputtering coating process, characterized in that, Implemented using the system described in any one of claims 1-5, the process comprising: Place the product to be processed on the substrate; Controlling the vacuum environment of the vacuum chamber; The main ion source and three ION laser ion auxiliary sources are controlled to emit ion beams. The central vertical target and three eccentric dynamic tilt targets are used for precipitation to modify the surface of the product to be processed.

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