Liner and semiconductor process chamber
By opening a gas outlet channel on the inner liner body located below the partition, dilution gas is blown to the corresponding position of the partition, solving the problem of uneven film thickness in the semiconductor process chamber and improving the uniformity of film thickness.
Patent Information
- Application Number
- CN202411040009.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-07-31
- Publication Date
- 2026-02-03
AI Technical Summary
In semiconductor process chambers, there is a problem of poor uniformity in the thickness of thin films during the growth of thin films on wafers, especially at the locations corresponding to spacers where the film thickness is insufficient.
A first channel is opened on the inner liner body, so that its gas outlet is located below and opposite to the partition. Diluting gas is blown through this channel to the corresponding position of the partition to increase the gas flow rate and flow rate, thereby improving the uniformity of film thickness.
By increasing the gas velocity and flow rate in the area corresponding to the barrier, the film thickness in the area corresponding to the barrier above the wafer was increased, thus improving the film thickness uniformity.
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Figure CN121451285A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor equipment, and in particular to an inner liner and a semiconductor process chamber. BACKGROUND
[0002] A semiconductor process chamber for preparing a silicon epitaxial wafer, such as a silicon epitaxial CVD (chemical vapor deposition) chamber, is mainly used for epitaxial growth of a thin film with a required conductivity type, resistivity, thickness, and lattice structure and integrity on a wafer.
[0003] The semiconductor process chamber comprises an inner liner, the inner liner is provided with a gas inlet channel and a gas outlet channel, and the gas inlet channel is divided into a plurality of gas inlet sub-channels by a partition. Process gas enters the inner cavity of the semiconductor process chamber through the plurality of gas inlet sub-channels, so as to perform an epitaxial growth process on the wafer. By adjusting the flow rate of the gas entering the different gas inlet sub-channels, the deposition rate of the thin film at the center and the edge of the wafer can be adjusted.
[0004] However, due to the presence of the partition, the gas flow rate at the position of the wafer corresponding to the partition is relatively small, and therefore the thickness of the thin film deposited at the position of the wafer corresponding to the partition is usually smaller than the thickness of the thin film at other regions of the wafer, so that the semiconductor process chamber has the problem of poor uniformity of the thickness of the thin film grown on the wafer during the process of growing the thin film on the wafer. SUMMARY
[0005] The present application discloses an inner liner and a semiconductor process chamber to solve the problem of poor uniformity of the thickness of the thin film grown on the wafer during the process of growing the thin film on the wafer in the related art.
[0006] To solve the above technical problems, the present application is implemented as follows:
[0007] In a first aspect, the present application discloses an inner liner applied to a semiconductor process chamber, the semiconductor process chamber comprising a cavity and a support seat arranged in the cavity, and the inner liner comprising:
[0008] an inner liner body arranged in the cavity and surrounding the support seat, the inner liner body being provided with a first gas inlet channel;
[0009] a partition, the first gas inlet channel being divided into a plurality of gas inlet sub-channels by the partition, and the plurality of gas inlet sub-channels being sequentially distributed along the surrounding direction of the inner liner body and used for blowing gas to the support surface of the support seat;
[0010] The inner liner body further has a first channel, a gas outlet of the first channel is formed on an inner surface of the inner liner body, is located below the barrier and is opposite to the barrier, and is used for blowing gas to the support surface to increase a gas flow rate of the support surface at a position corresponding to the barrier.
[0011] In a second aspect, the application further discloses a semiconductor process chamber, and the disclosed semiconductor process chamber comprises a cavity, a support seat arranged in the cavity and the inner liner of the first aspect.
[0012] The technical scheme adopted by the application can achieve the following technical effects:
[0013] The inner liner disclosed by the embodiments of the application can achieve the following technical effects: BRIEF DESCRIPTION OF DRAWINGS
[0014] Figure 1 FIG. 1 is a schematic diagram of a semiconductor process chamber disclosed by an embodiment of the application;
[0015] Figure 2 FIG. 5 is a schematic diagram of an inner liner disclosed by an embodiment of the application in a first perspective view;
[0016] Figure 3 FIG. 6 is a sectional view of the inner liner disclosed by the embodiment of the application in the first perspective view and at a first position;
[0017] Figure 4 FIG. 7 is a sectional view of the inner liner disclosed by the embodiment of the application in a second perspective view and at the first position;
[0018] Figure 5A cross-sectional view of the inner liner disclosed by the embodiments of the present application at a second perspective and at a second position;
[0019] Figure 6 A cross-sectional view of the inner liner disclosed by the embodiments of the present application at a second perspective and at a third position;
[0020] Figure 7 A cross-sectional view of the inner liner disclosed by the embodiments of the present application at a second perspective and at a fourth position;
[0021] Figure 8 A schematic view of the inner liner disclosed by the embodiments of the present application at a second perspective;
[0022] Figure 9 A structural schematic view of the first shield disclosed by the embodiments of the present application at a first perspective;
[0023] Figure 10 A structural schematic view of the first shield disclosed by the embodiments of the present application at a second perspective.
[0024] BRIEF DESCRIPTION OF THE DRAWINGS
[0025] 100 - cavity, A1 - upper cavity, A2 - lower cavity, 101 - second air inlet channel, 102 - first air outlet channel, 110 - top cover, 120 - base ring, 130 - bottom cover, 140 - first shield, 150 - second shield,
[0026] 200 - inner liner, 200a - inner liner body, 210 - first air inlet channel, 211 - air inlet sub-channel, 220 - barrier, 230 - first channel, 240 - second channel, 241 - air inlet section, 242 - arc section, 243 - air outlet section, 250 - annular groove, 260 - third channel, 270 - second air outlet channel,
[0027] 300 - support seat, 301 - annular gap,
[0028] 410 - first valve, 420 - third valve,
[0029] 500 - infrared heating device. DETAILED DESCRIPTION
[0030] In order to make the objectives, technical solutions and advantages of the present application clearer, the technical solutions of the present application will be described below in connection with specific embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.
[0031] The technical solutions disclosed by the embodiments of the present application will be described in detail below with reference to the accompanying drawings.
[0032] Please refer to Figures 1 to 10 The embodiments of the present application disclose an inner liner applied to a semiconductor process chamber. The disclosed semiconductor process chamber can be a semiconductor process chamber for preparing silicon epitaxial wafers. Of course, the disclosed semiconductor process chamber can also be a semiconductor chamber for performing other processes. The embodiments of the present application do not limit the specific type of the semiconductor process chamber.
[0033] The disclosed semiconductor process chamber includes a cavity 100 and a support seat 300 arranged in the cavity 100. The cavity 100 is the main part of the semiconductor process chamber, which provides a mounting base for other components of the semiconductor process chamber. The support seat 300 can be used to support a wafer.
[0034] The inner liner 200 includes an inner liner body 200a and a barrier 220. The inner liner body 200a is an annular structure, which is arranged in the cavity 100 and surrounds the support seat 300. The inner liner body 200a is provided with a first gas inlet channel 210, which penetrates the inner wall of the inner liner body 200a. The first gas inlet channel 210 is used to provide a reaction gas to the support surface of the support seat 300 for depositing a thin film on the wafer carried on the support surface.
[0035] It should be noted that the cavity 100 can be provided with a second gas inlet channel 101, which can be opposite to and penetrate the first gas inlet channel 210. The reaction gas can pass through the second gas inlet channel 101 and the first gas inlet channel 210 in sequence to reach the support surface of the support seat 300. The second gas inlet channel 101 and the first gas inlet channel 210 can both be straight channels, of course, the second gas inlet channel 101 and the first gas inlet channel 210 can also be curved or bent channels. The embodiments of the present application do not specifically limit the type of the second gas inlet channel 101 and the first gas inlet channel 210.
[0036] The barrier 220 is arranged in the first gas inlet channel 210, and the first gas inlet channel 210 is divided into a plurality of gas inlet sub-channels 211 by the barrier 220. The plurality of gas inlet sub-channels 211 are distributed in sequence along the surrounding direction of the inner liner body 200a, and the plurality of gas inlet sub-channels 211 are used to blow gas, such as reaction gas, to the support surface of the support seat 300.
[0037] In the case that the support seat 300 supports a wafer, the barrier 220 can be opposite to the position of one-half radius of the wafer, of course, the barrier 220 can also be opposite to other positions of the wafer, for example, the barrier 220 is opposite to the position of one-third radius of the wafer. The embodiments of the present application do not specifically limit the corresponding position of the barrier 220 and the wafer.
[0038] The gas inlets of the plurality of gas sub-channels 211 can be in communication with the second gas inlet channel 101 respectively. It should be noted that the second gas inlet channel 101 can have only one channel, and the gas outlet of the second gas inlet channel 101 can be adapted to the overall shape formed by the gas inlets of the plurality of gas sub-channels 211. Of course, the second gas inlet channel 101 can also be composed of a plurality of sub-channels, and the gas outlets of the plurality of sub-channels of the second gas inlet channel 101 can correspond to the gas inlets of the plurality of gas sub-channels 211 respectively and be adapted to the shape.
[0039] The reaction gas can enter the corresponding gas sub-channels 211 from the gas inlets of the plurality of gas sub-channels 211 through the second gas inlet channel 101. The gas outlets of the plurality of gas sub-channels 211 are directed to one side of the support seat 300, and the reaction gas entering the gas sub-channels 211 can be delivered to the wafer supported on the support surface of the support seat 300 through the gas outlets of the gas sub-channels 211, so as to perform an epitaxial growth process on the wafer to grow a thin film. In the specific process, the uniformity of the deposited thin film can be adjusted by controlling the flow rate of the reaction gas entering the plurality of gas sub-channels 211.
[0040] The inner liner body 200a is also provided with a first channel 230. The gas outlet of the first channel 230 is formed on the inner side wall of the inner liner body 200a, and the gas outlet of the first channel 230 is located below the blocking piece 220 and opposite to the blocking piece 220. The gas outlet of the first channel 230 is used to blow gas to the support surface to increase the gas flow rate of the support surface at the position corresponding to the blocking piece 220. For details, please refer to the following Figure 2 In the following Figure 2 In the following
[0041] It should be noted that the gas blown to the support surface by the gas outlet of the first channel 230 can be a dilution gas. For example, when monocrystalline silicon needs to be deposited on the wafer, the reaction gas is a mixture of a silicon source and hydrogen, and the dilution gas can be hydrogen; when silicon nitride needs to be deposited on the wafer, the reaction gas is a mixture of a silicon source and nitrogen, and the dilution gas can be nitrogen. The dilution gas is selected according to different processes, and the type of the dilution gas is not limited in the embodiments of the present application.
[0042] It should be noted that when the wafer is supported by the support seat 300, the gas outlets of the plurality of gas inlet sub-channels 211 and the gas outlet of the first channel 230 can be higher than the deposition surface of the wafer. The plurality of gas inlet sub-channels 211 are used to blow the reaction gas to different areas of the wafer from the same direction. The cavity 100 is provided with a first exhaust channel 102, the inner liner body 200a is provided with a second exhaust channel 270, the first exhaust channel 102 and the second exhaust channel 270 are communicated, and the tail gas in the cavity 100 can be discharged to the outside of the cavity 100 through the second exhaust channel 270 and the first exhaust channel 102.
[0043] The inner liner 200 disclosed in the embodiments of the present application is provided with the first channel 230 on the inner liner body 200a, so that the gas outlet of the first channel 230 is located below the baffle 220 and opposite to the baffle 220, so that when the reaction gas is sequentially transported to the wafer on the support surface through the second gas inlet channel 101 and the plurality of gas inlet sub-channels 211, the gas outlet of the first channel 230 can blow the dilution gas at the position corresponding to the baffle 220, so as to increase the gas flow rate of the area above the wafer corresponding to the baffle 220. There is a pressure difference above the wafer due to the different flow rates of the gas, so that part of the reaction gas will flow to the area above the wafer corresponding to the baffle 220 under the action of the pressure difference, so as to increase the concentration of the process gas in the area above the wafer corresponding to the baffle 220, thereby facilitating the increase of the thickness of the film deposited in the area of the wafer corresponding to the baffle 220. Moreover, due to the increase of the gas flow rate of the area above the wafer corresponding to the baffle 220 under the action of the dilution gas, the flow rate of the reaction gas flowing through the area above the wafer corresponding to the baffle 220 is increased, thereby the flow of the reaction gas flowing through the area of the wafer corresponding to the baffle 220 is increased, so as to increase the thickness of the film deposited in the area of the wafer corresponding to the baffle 220 and the uniformity of the thickness of the wafer during deposition of the film.
[0044] It should be noted that the flow rate of the dilution gas cannot be increased unlimitedly, and if the flow rate of the dilution gas is too large, the thickness of the film deposited in the area of the wafer corresponding to the baffle 220 will be reduced. Therefore, the flow rate of the dilution gas has a critical value, when the flow rate of the dilution gas is less than the critical value, the effect of the dilution gas on the increase of the thickness of the film is more significant, and when the flow rate of the dilution gas is greater than the critical value, the effect of the dilution gas on the decrease of the thickness of the film is more significant. The critical value can be obtained through experimental verification, and the critical values of different processes are different.
[0045] In a specific process, in order to improve the uniformity of the thickness of the wafer when depositing a thin film, the support seat 300 needs to drive the wafer supported thereon to rotate. In order to avoid interference between the support seat 300 and the inner liner body 200a when the support seat 300 rotates, optionally, an annular gap 301 can be formed between the inner liner body 200a and the support seat 300, so that the support seat 300 can avoid interference with the inner liner body 200a when rotating.
[0046] The cavity 100 can be divided into an upper cavity A1 and a lower cavity A2 by the support seat 300, and the upper cavity A1 and the lower cavity A2 can be communicated through the annular gap 301. The support surface of the support seat 300 can face the upper cavity A1. The gas outlets of the plurality of gas inlet sub-channels 211 can be located above the support seat 300, and the gas outlets of the plurality of gas inlet sub-channels 211 can be communicated with the upper cavity A1.
[0047] Since the lower cavity A2 does not need to perform an epitaxial growth process, if the reaction gas or particulate matter in the upper cavity A1 enters the lower cavity A2 through the annular gap 301, it will pollute the lower cavity A2, thereby increasing the maintenance time and cost of the semiconductor process chamber. In order to reduce the time and cost of maintaining the semiconductor process chamber, optionally, the semiconductor process chamber can also include a protective gas input device, which can be used to deliver protective gas to the lower cavity A2, so that the protective gas can form a gas barrier at the annular gap 301, thereby avoiding the reaction gas or particulate matter in the upper cavity A1 entering the lower cavity A2 through the annular gap 301, and thereby reducing the time and cost of maintaining the semiconductor process chamber.
[0048] In order to avoid the problem that the protective gas in the lower cavity A2 is too much from the annular gap 301 to the circumferential edge of the support seat 300, thereby causing the thickness uniformity of the thin film deposited at the edge of the wafer to be relatively poor, optionally, the width of the annular gap 301 can be 0.5mm-1mm, wherein the width of the annular gap 301 can include 0.5mm and 1mm. By setting the width of the annular gap 301 to be 0.5mm-1mm, the width of the annular gap 301 can be smaller under the condition that the support seat 300 can rotate, thereby reducing the gas flow from the annular gap 301 to the circumferential edge of the support seat 300, and thereby alleviating the problem that the thickness uniformity of the thin film deposited at the edge of the wafer is relatively poor.
[0049] Specifically, the gas inlet of the first channel 230 can be located on the outer surface of the cavity 100, and the outside of the cavity 100 can be provided with a dilution gas input device, through which dilution gas can be delivered from the gas inlet of the first channel 230 into the first channel 230.
[0050] In order to reduce the number of components of the semiconductor process chamber to optimize the structure of the semiconductor process chamber, optionally, the gas inlet of the first channel 230 can be arranged on the inner surface of the inner liner body 200a and below the gas outlet of the first channel 230, so that the gas inlet of the first channel 230 is below the support seat 300 and communicates with the lower cavity A2. The protective gas in the lower cavity A2 can enter the first channel 230 through the gas inlet of the first channel 230 and be delivered from the gas outlet of the first channel 230 to the area above the wafer corresponding to the baffle 220.
[0051] It should be noted that in the case that the gas inlet of the first channel 230 is below the gas outlet of the first channel 230, so that the gas inlet of the first channel 230 is below the support seat 300 and communicates with the lower cavity A2, the dilution gas input device is the protective gas input device, and the dilution gas is the protective gas. The protective gas input device is used to deliver the protective gas to the lower cavity A2.
[0052] The inner liner 200 disclosed in the embodiments of the present application arranges the gas inlet of the first channel 230 below the gas outlet of the first channel 230, so that the gas inlet of the first channel 230 is below the support seat 300 and communicates with the lower cavity A2. Therefore, the protective gas in the lower cavity A2 can enter the first channel 230 through the gas inlet of the first channel 230 and be delivered from the gas outlet of the first channel 230 to the area above the wafer corresponding to the baffle 220. Thus, the protective gas in the lower cavity A2 is fully utilized, and a gas input device does not need to be arranged on the side of the gas inlet of the first channel 230. Therefore, the number of components of the semiconductor process chamber can be reduced to optimize the structure of the semiconductor process chamber.
[0053] In order to adjust the deposition rate of the thin film in the area of the wafer corresponding to the baffle 220, optionally, the inner liner 200 can further include a first valve 410. The first valve 410 can be arranged on the inner liner body 200a. The first valve 410 can be used to adjust the flow rate of the gas flowing through the first channel 230.
[0054] The inner liner 200 disclosed in the embodiments of the present application arranges the first valve 410 on the inner liner body 200a, so that the first valve 410 can adjust the flow rate of the gas flowing through the first channel 230, thereby adjusting the deposition rate of the thin film in the area of the wafer corresponding to the baffle 220.
[0055] Optionally, the inner side wall of the inner liner body 200a can be provided with an annular groove 250, the annular groove 250 can extend along the circumferential direction of the inner liner body 200a, and the gas inlet of the first channel 230 can be in communication with the annular groove 250. It should be noted that when the inner liner 200 is applied to the semiconductor process chamber, the annular groove 250 can be located below the support seat 300, that is, in the lower cavity A2.
[0056] The inner liner 200 disclosed in the embodiments of the present application can make the gas inlet of the first channel 230 in communication with the annular groove 250 by providing the annular groove 250 on the inner side wall of the inner liner body 200a, so that the protective gas in the lower cavity A2 can gather in the annular groove to form a relatively stable gas flow, and then enter the first channel 230, thereby facilitating the stability of the gas flow in the first channel.
[0057] In order to improve the growth efficiency of the film of the wafer in the process, the semiconductor process chamber can further include an infrared heating device 500, and the cavity 100 can include a top cover 110, the top cover 110 can be transparent quartz material, the top cover 110 can be located above the support seat 300 and opposite to the support surface of the support seat 300. The infrared light emitted by the infrared heating device 500 can pass through the top cover 110 to heat the support seat 300 or the wafer on the support seat 300, thereby improving the growth efficiency of the film of the wafer in the process.
[0058] During the process of the semiconductor process chamber to deposit a film on the wafer, the reaction gas will also deposit a film on the inner side wall of the top cover 110. When the film deposited on the inner side wall of the top cover 110 reaches a certain thickness, the deposited film will affect the heating effect of the infrared heating device 500 on the support seat 300 or the wafer on the support seat 300, and the deposited film also has the risk of falling off to affect the quality of the deposited film, therefore, the maintenance personnel need to clean and maintain the top cover 110 regularly. However, frequent cleaning and maintenance of the top cover 110 will result in low process efficiency of the semiconductor process chamber.
[0059] In order to improve the process efficiency of the semiconductor process chamber, the inner liner body 200a can be further provided with a second channel 240, the gas outlet of the second channel 240 can be located above the blocking piece 220, and the gas outlet of the second channel 240 is used to blow gas in a direction parallel to the support surface, so as to form a gas protection layer on the surface of the cavity 100 facing the support surface, that is, the inner side wall of the top cover 110. The gas in the second channel 240 can be the same as the gas in the first channel 230.
[0060] It should be noted that the gas outlet of the second channel 240 can blow the gas in a direction parallel to the support surface, and the gas can be a dilution gas. For example, when monocrystalline silicon needs to be deposited on the wafer, the reaction gas is a mixture of a silicon source and hydrogen, and the dilution gas can be hydrogen; when silicon nitride needs to be deposited on the wafer, the reaction gas is a mixture of a silicon source and nitrogen, and the dilution gas can be nitrogen. The dilution gas is selected according to different processes, and the type of the dilution gas is not limited in the embodiments of the present application. In the case that the inner liner 200 is applied to the semiconductor process chamber, the gas outlet of the second channel 240 is located above the support seat 300, and the gas outlet of the second channel 240 can be adjacent to the surface of the cavity 100 facing the support surface.
[0061] The inner liner 200 disclosed in the embodiments of the present application can be provided with the second channel 240 on the inner liner body 200a, so that the gas outlet of the second channel 240 is located above the barrier 220, and the gas outlet of the second channel 240 can blow the gas in a direction parallel to the support surface, so as to form a gas protection layer on the surface of the cavity 100 facing the support surface, thereby preventing the reaction gas from contacting the top cover 110 or diluting the concentration of the reaction gas near the top cover 110, and further slowing down the deposition rate of the inner sidewall film layer of the top cover 110, thereby reducing the frequency of cleaning and maintaining the top cover 110, and improving the process efficiency of the semiconductor process chamber.
[0062] Optionally, the gas inlet of the second channel 240 can be provided on the inner surface of the inner liner body 200a and located below the barrier 220. In the case that the inner liner 200 is applied to the semiconductor process chamber, the gas inlet of the second channel 240 can be located below the support seat 300, that is, the gas inlet of the second channel 240 is in communication with the lower cavity A2.
[0063] The inner liner 200 disclosed in the embodiments of the present application can be provided with the gas inlet of the second channel 240 on the inner surface of the inner liner body 200a and located below the barrier 220, so that the gas (that is, the protective gas in the lower cavity A2, and the protective gas can be the aforementioned dilution gas) below the support seat 300 blows the gas in a direction parallel to the support surface through the second channel 240, thereby making full use of the gas in the lower cavity A2, and avoiding the need to separately provide a gas conveying device on the side of the gas inlet of the second channel 240, thereby facilitating the simplification of the structure of the semiconductor process chamber.
[0064] In order to make the flow of the gas flow in the cavity 100 relatively stable, the first exhaust channel 102 and the second exhaust channel 270 can be located on opposite sides of the second gas inlet channel 101 and the first gas inlet channel 210, so that the gas flow in the cavity 100 is relatively stable during the flow.
[0065] In an optional embodiment, the second passage 240 can include an air inlet section 241, an arc section 242, and a plurality of air outlet sections 243. The arc section 242 can extend along the arrangement direction of the plurality of air inlet sub-passages 211 and be located above the first air inlet passage 210. The arc section 242 can be located on the side where the first air inlet passage 210 is located. Specifically, the arc section 242 can be located in a first region of the inner liner body 200a, and the second exhaust passage 270 can be located in a second region of the inner liner body 200a. The first region and the second region can be divided by a central axis perpendicular to the direction of the first air inlet passage 210 to the second exhaust passage 270, and each region can be half of the inner liner body 200a.
[0066] One end of the air inlet section 241 can be in communication with the arc section 242, and the other end of the air inlet section 241 can be a gas inlet of the second passage 240. One end of the air outlet section 243 can be in communication with the arc section 242, and the other end of the air outlet section 243 can be a gas outlet of the second passage 240. The plurality of air outlet sections 243 can be arranged in sequence along the extension direction of the arc section 242. In the case where the inner liner 200 is applied to a semiconductor process chamber, the air inlet section 241 can be in communication between the arc section 242 and the lower cavity A2, and the air outlet section 243 can be in communication between the arc section 242 and the upper cavity A1.
[0067] The inner liner 200 disclosed in the embodiments of the present application sets the second passage 240 to include the air inlet section 241, the arc section 242, and the air outlet section 243, so that the arc section 242 extends along the arrangement direction of the plurality of air inlet sub-passages 211 and is located above the first air inlet passage 210, and the arc section 242 is located on the side where the first air inlet passage 210 is located. Therefore, the air outlet section 243 can blow gas from the side where the first air inlet passage 210 is located to the direction parallel to the support surface, so as to form a gas protection layer on the surface of the support surface facing the top cover 110, and facilitate the smooth discharge of the gas flowing through the inner side surface of the top cover 110 from the first exhaust passage 102 and the second exhaust passage 270.
[0068] In order to control the flow rate of the gas in the second passage 240, the inner liner 200 can further include a second valve, which can be arranged in the inner liner body 200a. The second valve can be used to adjust the flow rate of the gas flowing through the second passage 240, so as to control the flow rate of the gas in the second passage 240 according to actual needs.
[0069] In order to improve the stability of the gas flow into the second passage 240, the inner side wall of the inner liner body 200a can be provided with an annular groove 250, which can extend along the circumferential direction of the inner liner body 200a. The gas inlet of the second passage 240 can be in communication with the annular groove.
[0070] The inner liner 200 disclosed by the embodiment of the present application can be provided with an annular groove 250 on the inner side wall of the inner liner body 200a, so that the gas in the lower cavity A2 can gather in the annular groove 250 to form a relatively stable gas flow, and then enter the second channel 240, thereby facilitating the stability of the gas flow in the second channel 240.
[0071] To improve the concentration of process gas in the region above the wafer corresponding to the barrier 220, the inner liner body 200a can also be provided with a third channel 260, the gas inlet of the third channel 260 can be in communication with the gas inlet sub-channel 211, and the gas outlet of the third channel 260 can be provided on the inner surface of the inner liner body 200a and above the barrier 220 and opposite to the barrier 220.
[0072] The inner liner 200 disclosed by the embodiment of the present application can be provided with a third channel 260 on the inner liner body 200a, so that the gas inlet of the third channel 260 is in communication with the gas inlet sub-channel 211, and the gas outlet of the third channel 260 is provided on the inner surface of the inner liner body 200a and above the barrier 220 and opposite to the barrier 220, so that when the reaction gas is transported to the surface of the wafer through the gas inlet sub-channel 211, part of the reaction gas in the gas inlet sub-channel 211 can enter the third channel 260 through the gas inlet of the third channel 260 and be transported to the region above the wafer corresponding to the barrier 220 through the gas outlet of the third channel 260, thereby improving the concentration of the reaction gas in the region above the wafer corresponding to the barrier 220, and facilitating the deposition of the film in the region of the wafer corresponding to the barrier 220.
[0073] Optionally, the inner liner 200 can also include a third valve 420, which can be provided on the inner liner body 200a, and the third valve 420 can be used to adjust the flow of gas through the third channel 260, thereby adjusting the deposition rate of the film in the region of the wafer corresponding to the barrier 220.
[0074] To improve the overall strength of the inner liner body 200a, the inner liner body 200a can be provided in a one-piece annular structure, and the first gas inlet channel 210 can be provided on the side wall of the inner liner body 200a. By providing the inner liner body 200a in a one-piece annular structure, the overall strength of the inner liner body 200a can be improved.
[0075] To improve the rate of depositing thin film on the wafer, optionally, the flow area of the gas inlet sub-channel 211 can be decreased, wherein the flow area of the gas inlet of the gas inlet sub-channel 211 can be greater than the flow area of the gas outlet of the gas inlet sub-channel 211, so that the flow rate of the reaction gas can be accelerated when the reaction gas passes through the gas inlet sub-channel 211, and in turn, the flow rate of the reaction gas flowing through the wafer can be improved, so that the flow of the reaction gas flowing above the wafer per unit time can be improved, and in turn, the rate of depositing thin film on the wafer by the reaction gas can be improved.
[0076] The application also discloses a semiconductor process chamber, which comprises a cavity 100, a support seat 300 arranged in the cavity 100, and the inner liner 200 disclosed in the above embodiment. The inner liner body 200a is arranged in the cavity 100 and surrounds the support seat 300.
[0077] The semiconductor process chamber disclosed in the embodiment of the application can improve the thickness of the thin film deposited in the area of the wafer corresponding to the barrier 220 by arranging the inner liner 200 disclosed in the above embodiment, and improve the uniformity of the thickness of the wafer during deposition of the thin film.
[0078] In an optional embodiment, the cavity 100 can comprise a base ring 120 and a first protective member 140, the base ring 120 can be sleeved on the inner liner 200, the base ring 120 can be provided with a first mounting hole, and the first protective member 140 can be arranged in the first mounting hole. The first protective member 140 can be of an integrated structure, and the first protective member 140 can be provided with a second gas inlet channel 101.
[0079] The semiconductor process chamber disclosed in the embodiment of the application is arranged in a structure comprising the base ring 120 and the first protective member 140, so that the first protective member 140 can be arranged in the first mounting hole, and the first protective member 140 can be provided with the second gas inlet channel 101, so that the reaction gas can directly contact the first protective member 140 without contacting the base ring 120. Therefore, when the reaction gas causes corrosion to the first protective member 140 or a relatively thick film layer is deposited on the inner wall of the second gas inlet channel 101, the first protective member 140 can be directly cleaned or replaced, thereby facilitating the maintenance of the semiconductor process chamber. By arranging the first protective member 140 in an integrated structure, the overall strength of the first protective member 140 can be improved.
[0080] Specifically, the cavity 100 can further comprise a bottom cover 130, and the top cover 110, the base ring 120 and the bottom cover 130 can enclose an inner cavity of the cavity 100. The cavity 100 can further comprise a second protective member 150, the base ring 120 can be provided with a second mounting hole, the second protective member 150 can be arranged in the second mounting hole, and the second protective member 150 can be provided with a first exhaust channel 102.
[0081] The semiconductor process chamber disclosed by the embodiments of the present application can be directly cleaned or replaced when the second shield 150 is corroded by the tail gas after the reaction or a thicker film layer is deposited on the inner wall of the first exhaust passage 102, thereby facilitating the maintenance of the semiconductor process chamber.
[0082] It should be noted that the first valve 410, the second valve, the third valve 420, and the fourth valve disclosed by the embodiments of the present application can be needle valves, of course, the first valve 410, the second valve, the third valve 420, and the fourth valve can also be other types of valves, and the embodiments of the present application do not limit the types of the first valve 410, the second valve, the third valve 420, and the fourth valve.
[0083] The above embodiments of the present application mainly describe the differences between the various embodiments, and the optimization features of the various embodiments can be combined to form a better embodiment without contradiction, and the combination is not described here in the interest of brevity.
[0084] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above specific embodiments, and the above specific embodiments are only illustrative and not restrictive, and those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the scope of protection of the claims, and all of them belong to the protection of the present application.
Claims
1. An inner liner for a semiconductor process chamber, the semiconductor process chamber comprising a cavity (100) and a susceptor (300) disposed within the cavity (100), characterized by, The inner liner (200) comprises: an inner liner body (200a) arranged in the cavity (100) and surrounding the support base (300), the inner liner body (200a) being provided with a first gas inlet channel (210); a partition (220), the first gas inlet channel (210) being divided into a plurality of gas inlet sub-channels (211) by the partition (220), the plurality of gas inlet sub-channels (211) being arranged in sequence along the circumferential direction of the inner liner body (200a) and used for blowing gas to the support surface of the support base (300); the inner liner body (200a) is further provided with a first channel (230), a gas outlet of the first channel (230) being arranged on the inner surface of the inner liner body (200a) and below the partition (220) and opposite to the partition (220), and used for blowing gas to the support surface to increase the gas flow rate of the support surface at the position corresponding to the partition (220).
2. The inner liner of claim 1, wherein, a gas inlet of the first channel (230) is arranged on the inner surface of the inner liner body (200a) and below the gas outlet of the first channel (230).
3. The inner liner of claim 1, wherein, The inner liner (200) further comprises a first valve (410) arranged on the inner liner body (200a) and used for adjusting the gas flow rate in the first channel (230).
4. The inner liner of claim 1, wherein, an inner side wall of the inner liner body (200a) is provided with an annular groove (250) extending along the circumferential direction of the inner liner body (200a), and a gas inlet of the first channel (230) is in communication with the annular groove (250).
5. The inner liner of claim 1, wherein, The inner liner body (200a) is further provided with a second channel (240), a gas outlet of the second channel (240) being arranged above the partition (220) and used for blowing gas in a direction parallel to the support surface to form a gas protection layer on the surface of the cavity (100) facing the support surface.
6. The inner liner of claim 5, wherein, a gas inlet of the second channel (240) is arranged on the inner surface of the inner liner body (200a) and below the partition (220).
7. The inner liner of claim 5, wherein, The second channel (240) comprises a gas inlet section (241), an arc-shaped section (242) and a plurality of gas outlet sections (243), the arc-shaped section (242) extending along the arrangement direction of the plurality of gas inlet sub-channels (211) and being arranged above the first gas inlet channel (210), the arc-shaped section (242) being arranged on one side of the first gas inlet channel (210), one end of the gas inlet section (241) being in communication with the arc-shaped section (242), the other end of the gas inlet section (241) being the gas inlet of the second channel (240), one end of each of the plurality of gas outlet sections (243) being in communication with the arc-shaped section (242), the other end of each of the plurality of gas outlet sections (243) being the gas outlet of the second channel (240), and the plurality of gas outlet sections (243) being arranged in sequence along the extension direction of the arc-shaped section (242).
8. The inner liner of claim 5, wherein, The inner liner (200) further comprises a second valve arranged in the inner liner body (200a) for regulating the flow of gas through the second passage (240).
9. The inner liner of claim 5, wherein, An inner side wall of the inner liner body (200a) is provided with an annular groove (250) extending along a circumferential direction of the inner liner body (200a), and a gas inlet of the second passage (240) is in communication with the annular groove (250).
10. The inner liner of claim 1, wherein, The inner liner body (200a) is further provided with a third passage (260), a gas inlet of the third passage (260) is in communication with the gas inlet sub-passage (211), a gas outlet of the third passage (260) is arranged on an inner surface of the inner liner body (200a) and is located above and opposite to the barrier (220).
11. The inner liner of claim 1, wherein, The inner liner further comprises a third valve (420) arranged in the inner liner body (200a), and the third valve (420) is used for regulating the flow of gas through the third passage (260).
12. The inner liner of claim 1, wherein, The flow area of the gas inlet sub-passage (211) decreases, and the flow area of the gas inlet of the gas inlet sub-passage (211) is greater than the flow area of the gas outlet of the gas inlet sub-passage (211).
13. A semiconductor process chamber, characterized by, The inner liner (200) is arranged in the support seat (300) in the cavity (100). The inner liner (200) is arranged in the support seat (300) in the cavity (100).