Passive adaptive reserve pool node based on TaOx multifunctional device

Abstract

The invention belongs to the related field of artificial neuromorphisms, and discloses a passive adaptive reserve pool node based on TaOx multifunctional devices, the node is composed of two TaOx multifunctional devices with the same structure, and each TaOx multifunctional device comprises a first electrode layer, a functional layer, a barrier layer and a second electrode layer which are sequentially stacked from bottom to top; before the designed initialization operation is executed, the two TaOx multifunctional devices have simulation volatile characteristics; and after the initialization operation is executed, one TaOx multifunctional device has a multi-valued non-volatile characteristic and is used for adaptively regulating and controlling the dynamic range of the reserve pool node, and the other TaOx multifunctional device still keeps a simulated volatile characteristic and is used for realizing the dynamic behavior of the reserve pool node. According to the invention, the dynamic range can be spontaneously adjusted according to the input signal, the self-adaptability to the wide-range signal is realized, an active adjustment circuit is not needed, and a more efficient device-level solution is provided for the dynamic range limitation of the physical reserve pool.

Description

Technical Field

[0001] This invention belongs to the field of artificial neuromorphology, and more specifically, relates to a method based on TaO2. x Passive adaptive reservoir node for multifunctional devices. Background Technology

[0002] Inspired by the biological brain, reservoir computing has been proposed to process complex time-series data. Its working principle involves mapping the input signal to a high-dimensional space and processing it using a fixed network with nonlinear dynamic characteristics (the "reservoir layer"). The advantage of this architecture is that it only requires training a simple linear output layer, avoiding the costly backpropagation training of traditional recurrent neural networks, thus exhibiting significant advantages in computational efficiency, energy consumption, and speed. In recent years, reservoir computing has demonstrated outstanding performance in tasks such as time series prediction and signal processing, and has driven research into the hardware implementation of physical systems such as memristors and photonic devices.

[0003] Currently, the hardware implementation of reservoir computing still faces a key challenge: dynamic saturation of physical nodes. Existing physical systems, due to their fixed parameters, can only adapt to a specific range of input signals. When processing large-amplitude signals, they easily reach saturation, leading to a significant decrease in system computational accuracy and severely limiting the practical application of the hardware system. To address this issue, researchers have proposed the concept of adaptive reservoir computing, which dynamically adjusts node parameters through feedback loops or external control.

[0004] However, further research shows that existing adaptive schemes generally employ active control strategies, requiring complex external circuits and control algorithms. This not only significantly increases system complexity and energy consumption but also diminishes the original energy efficiency advantages of reservoir computing. Therefore, designing a physical node that can dynamically expand its operating range through a passive adaptive mechanism without external active control has become a key technological bottleneck driving reservoir computing towards practical applications. Summary of the Invention

[0005] To address one or more of the above-mentioned deficiencies or improvement needs of the existing technology, the present invention provides a TaO-based... x The passive adaptive reservoir node of the multifunctional device, through the re-study and design of the specific structure and especially the working mechanism of its key components, can spontaneously adjust the dynamic range according to the input signal, realize the adaptability to a wide range of signals without the need for active adjustment circuits, and provide a more efficient device-level solution for the dynamic range limitation of physical reservoirs. It also has comprehensive advantages such as compact structure and easy operation.

[0006] To achieve the above objectives, according to the present invention, a TaO-based...x The passive adaptive reservoir node of the multifunctional device is characterized by: The reservoir node consists of two identical TaO structures. x Multifunctional devices, namely the first and second TaO x Composed of multifunctional devices, and for the first and second TaO x For a multifunctional device, each component includes a first electrode layer, a functional layer, a barrier layer, and a second electrode layer stacked sequentially from bottom to top, wherein the first electrode layer is made of an inert metal material; the functional layer is made of TaO. x The material is made with x less than 2.5; the barrier layer is made of an inert metal to block metal atoms of the second electrode layer during the preparation of the TaO. x The process of the multifunctional device itself enters the functional layer; the second electrode layer is made of an active metal material; Before performing the initialization operation, the first and second TaO x The multifunctional devices each have oxygen vacancies in their respective functional layers, forming trap energy levels, thereby enabling each TaO x Multifunctional devices utilize charge trapping and detrapping mechanisms to achieve resistive switching behavior, and both possess simulated volatile characteristics; During the initialization operation, the second TaO is... x A positive pulse is applied to the second electrode layer of the multifunctional device, while its first electrode layer is grounded. At this time, the second TaO x The resistive switching mechanism of the multifunctional device is changed to a conductive filament mechanism, and it possesses multi-valued non-volatile characteristics. When the aforementioned passive adaptive reserve pool node is operational, the first and second TaO will be... x The multifunctional devices are connected in series back-to-back through their respective first electrode layers, and to the first TaO. x A negative bias is applied to the second electrode layer of the multifunction device, at which time the first TaO x The multifunctional device has analog volatile characteristics, and the second TaO x Multifunctional devices possess multi-valued non-volatile characteristics; in this way, the first TaO x The multifunctional device utilizes its analog volatile characteristics to provide different current responses to pulses of different amplitudes or frequencies, thereby realizing the dynamic behavior of the reservoir node; the second TaO x Multifunctional devices utilize their multi-valued non-volatile characteristics to adaptively control the dynamic range of reservoir nodes by adjusting their resistance state.

[0007] As a further preferred embodiment of the present invention, the first electrode layer is made of one of the following inert metal materials: Pt, Pd, Au, Ni, ITO, Ti, W, Al, Ta, Hf, TaN, TiN, and TiW; the second electrode layer is made of the following active metal materials: Ag and Cu; and the barrier layer is made of one of the following inert metal materials: Pt, Pd, Au, Ni, ITO, Ti, W, Al, Ta, Hf, TaN, TiN, and TiW.

[0008] As a further preferred embodiment of the present invention, the thickness of the first electrode layer is designed to be 5nm~2000nm, the thickness of the functional layer is designed to be 2nm~100nm, the thickness of the barrier layer is designed to be 2nm~10nm, and the thickness of the second electrode layer is designed to be 10nm~2000nm.

[0009] As a further preferred embodiment of the present invention, when the first TaO x When the negative voltage pulse applied to the second electrode layer of the multifunctional device exceeds a preset value, its resistance decreases as the number of pulses increases; simultaneously, the second TaO... x The voltage drop across the multifunctional device increases until it reaches its threshold voltage, at which point the resistance decreases; at this point, the voltage is redistributed to the first TaO. x The multifunctional device achieves a new dynamic equilibrium, thereby enabling the entire reservoir node to reach a new dynamic range.

[0010] As a further preferred embodiment of the present invention, when the first TaO x When the amplitude of the negative voltage pulse applied to the second electrode layer of the multifunctional device is greater than the preset value, the current response of the entire reservoir node tends to saturate as the number of pulses increases. When the saturation state is reached, the entire reservoir node will automatically jump to a new dynamic operating range, and this jump process can be repeated to achieve multiple adaptive adjustments of the dynamic range.

[0011] As a further preferred embodiment of the present invention, for the second TaO x For multifunctional devices, it is preferable to adjust the relaxation time and current change of the reservoir node by controlling its resistance state or resistance, thereby effectively adjusting the dynamic response range of the entire reservoir node.

[0012] As a further preferred embodiment of the present invention, the first and second TaO x The multifunctional device is preferably fabricated in a single photolithography operation, and there is no need to consider the resistance matching problem during the initialization operation.

[0013] In summary, the technical solutions conceived by this invention have the following main technical advantages compared with the prior art: (1) This invention fully utilizes TaO by re-examining the specific structure and composition of key components, especially their working mechanism. x The discovery that the multifunctional device has different electrical characteristics before and after initialization is used to construct the reservoir node. Compared with existing similar products, it can automatically adjust the dynamic range according to the input signal, realize the adaptability to a wide range of signals, and does not require active adjustment circuitry. (2) The passive adaptive reservoir node designed in this invention has a compact overall structure, is easy to operate, and can be controlled by adjusting the second TaO. x The control of the resistance or other characteristics of multifunctional devices allows for more flexible and convenient adjustment of the relaxation time and current change of the reservoir node. (3) The passive adaptive reservoir designed in this invention can be prepared by simultaneously preparing two TaOs using a single photolithography process. x This multifunctional device eliminates the need to consider impedance matching and other issues during initialization, thereby further improving the product's processing efficiency and adaptability. (4) Compared with existing similar products, the passive adaptive reservoir designed in this invention exhibits stronger robustness and can maintain stable prediction accuracy under a wide range of parameters. Therefore, it can provide an efficient device-level solution for the dynamic range limitation of physical reservoirs and is conducive to building a large-scale, highly integrated physical reservoir network. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the overall structure of the passive adaptive reservoir node according to the present invention; Figure 2 This is a specific example of the Pt / TaO provided in conjunction with the present invention. x The current-voltage curve of a Ti / Ag multifunctional device after 30 consecutive voltage scans without initialization. Figure 3 This is a specific example of the Pt / TaO provided in conjunction with the present invention. x / Ti / Ag multifunctional device, test response diagram of pulses with different amplitudes when not initialized, where the frequency of the applied pulse is 50Hz, the pulse width is 10ms, and the amplitudes are -3.4V, -3.6V, -3.8V, and -4V respectively; Figure 4 This is a specific example of the Pt / TaO provided in conjunction with the present invention. x / Ti / Ag multifunctional device, test response diagram of applying pulses of different frequencies when it is not initialized, where the amplitude of the applied pulse is -3.6V, the pulse width is 10ms, and the frequencies are 1.25Hz, 2.5Hz, 5Hz and 6.67Hz respectively. Figure 5 This is a specific example of the Pt / TaO provided in conjunction with the present invention. x The current-voltage curve of a Ti / Ag multifunctional device after initialization (current limit 1mA, scan voltage 0~1V); Figure 6 This is a specific example of the Pt / TaO provided in conjunction with the present invention. x / Ti / Ag multifunctional device, after initialization, retain characteristics under different resistive states, test results, where the test duration is 1000s; Figure 7 The passive adaptive reservoir node provided in conjunction with a specific example of the present invention is a current response diagram measured by applying a single pulse after adjusting the resistance state of its internal multi-value non-volatile devices, wherein the applied pulse amplitude is -6V and the pulse width is 20ms. Figure 8 This is a passive adaptive reserve pool node provided in conjunction with a specific example of the present invention, when executing... Figure 7 The current relaxation curve shown is obtained after pulse excitation and measured at a constant -2V reading voltage. Figure 9 Yes Figure 7 and Figure 8 Statistical results of the relationship between the relaxation time and current change at the mid-node and the resistive state of multi-valued non-volatile devices; Figure 10 This is a current response diagram of a passive adaptive reservoir node provided in conjunction with a specific example of the present invention to 16 different pulse sequences after adjusting the resistance state of its internal multi-value non-volatile devices; Figure 11 This is a passive adaptive reservoir node provided in conjunction with a specific example of the present invention, showing the current response diagram of 100 consecutive pulses with different amplitudes, wherein the pulse width of the applied pulses is 80μs, the frequency is 6.67kHz, and the amplitudes are -4.6V, -4.7V, -4.8V, and -4.9V, respectively. Figure 12 This is a schematic diagram illustrating the passive adaptive reservoir system constructed according to the present invention; Figure 13 yes Figure 12 The results show a performance comparison between the passive adaptive reservoir system and the traditional reservoir system in predicting Hénon map chaotic systems. Figure 14 yes Figure 12 The passive adaptive reservoir system shown is compared with the conventional reservoir system in predicting Hénon map chaotic systems. The normalized root mean square error distribution of the two systems is shown in the range of maximum input voltage (8~9V) and mask length (5~50). Detailed Implementation

[0015] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0016] It should be understood that expressions such as "comprising" and "may include" as used in this application indicate the existence of the disclosed functions, operations, or constituent elements, and do not limit one or more additional functions, operations, and constituent elements. In this application, terms such as "comprising" and / or "having" may be interpreted as indicating a specific characteristic, number, operation, constituent element, component, or combination thereof, but should not be interpreted as excluding the existence or possibility of adding one or more other characteristics, numbers, operations, constituent elements, components, or combinations thereof.

[0017] It should be understood that the terms “center,” “upper,” “lower,” “front,” “rear,” “left,” “right,” “vertical,” “horizontal,” “inner,” “outer,” “clockwise,” “counterclockwise,” “axial,” “radial,” and “circumferential” indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0018] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0019] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0020] Figure 1 This is a schematic diagram of the overall structure of the passive adaptive reservoir node according to the present invention. The following will be combined with... Figure 1 To explain the invention in more detail.

[0021] like Figure 1 As shown, the reservoir node of the present invention consists of two identical TaO structures. x Multifunctional devices, namely the first and second TaO x Composed of multifunctional devices, and the first and second TaO x For a multifunctional device, each component includes a first electrode layer, a functional layer, a barrier layer, and a second electrode layer stacked sequentially from bottom to top, wherein the first electrode layer is made of an inert metal material; the functional layer is made of TaO. x The material is made with x less than 2.5; the barrier layer is made of an inert metal to block metal atoms of the second electrode layer during the preparation of the TaO. x The process of the multifunctional device itself enters the functional layer; the second electrode layer is made of an active metal material; Before performing the initialization operation, the first and second TaO x The multifunctional devices each have oxygen vacancies in their respective functional layers, forming trap energy levels, thereby enabling each TaO x Multifunctional devices utilize charge trapping and detrapping mechanisms to achieve resistive switching behavior, and both possess simulated volatile characteristics; During the initialization operation, the second TaO is... x A positive pulse is applied to the second electrode layer of the multifunctional device, i.e., device B, while its first electrode layer is grounded; correspondingly, the second TaO x The resistive switching mechanism of the multifunctional device has been changed from the charge trapping and detrapping mechanism to the conductive wire mechanism, and it has multi-valued non-volatile characteristics. When the aforementioned passive adaptive reserve pool node is operational, the first and second TaO will be... x The multifunctional devices, namely devices A and B, are connected in series back-to-back through their respective first electrode layers and are connected to the first TaO. x A negative bias voltage is applied to the second electrode layer of the multifunction device, at which time device A, i.e., the first TaO, is... x The multifunctional device has analog volatile characteristics; device B is also known as the second TaO. x Multifunctional devices possess multi-valued non-volatile characteristics; in this way, the first TaO x The multifunctional device utilizes its analog volatile characteristics to provide different current responses to pulses of different amplitudes or frequencies, thereby realizing the dynamic behavior of the reservoir node; the second TaO x Multifunctional devices utilize their multi-valued non-volatile characteristics to adaptively control the dynamic range of reservoir nodes by adjusting their resistance state.

[0022] More specifically, in one instance, the functional layer is TaO.x The thin film has x = 2.042; the first electrode layer is made of Pt; the barrier layer is made of Ti; and the second electrode layer is made of Ag. Furthermore, the first electrode layer has a thickness of 100 nm, the functional layer has a thickness of 10 nm, the barrier layer has a thickness of 5 nm, and the second electrode layer has a thickness of 100 nm. For initialization operations, the parameters adopted include, for example, a current limit of 1 mA and a voltage of 0–1 V.

[0023] Figure 2 This is a specific example of the Pt / TaO provided in conjunction with the present invention. x The current-voltage curves of a / Ti / Ag multifunctional device, obtained from 30 consecutive voltage scans without initialization, are shown. The Pt electrode is grounded, and the Ag electrode is subjected to a negative scan bias of 0 to -3 to 0V. The results show no significant shift in the voltage-current curves between two consecutive scans, indicating that the device spontaneously returns to its initial resistive state after voltage removal without additional electrical reset, demonstrating short-term memory characteristics. This characteristic is suitable for implementing the dynamic response behavior of reservoir nodes.

[0024] Figure 3 This is a specific example of the Pt / TaO provided in conjunction with the present invention. x The test response graphs of a Ti / Ag multifunctional device, without initialization, are obtained by applying pulses of different amplitudes. The applied pulses have a frequency of 50Hz, a pulse width of 10ms, and amplitudes of -3.4V, -3.6V, -3.8V, and -4V. Figure 3 It can be seen that the device current response accumulates with the increase of the number of pulses and is enhanced with the increase of the pulse amplitude.

[0025] Figure 4 This is a specific example of the Pt / TaO provided in conjunction with the present invention. x The test response diagrams of the / Ti / Ag multifunctional device, without initialization, are obtained by applying pulses of different frequencies. The applied pulses have an amplitude of -3.6V, a pulse width of 10ms, and frequencies of 1.25Hz, 2.5Hz, 5Hz, and 6.67Hz. Figure 4 It can be seen that the device current response increases with the increase of the applied pulse frequency.

[0026] Figure 5 This is a specific example of the Pt / TaO provided in conjunction with the present invention. x The current-voltage curve of a / Ti / Ag multifunctional device after initialization (current limit 1mA, scan voltage 0~1V) is shown. The Pt electrode is grounded, and a continuous scan voltage of 0~1~0~-1~0V is applied to the Ag electrode. Figure 5 It is evident that the device exhibits non-volatile characteristics after initialization.

[0027] Figure 6 This is a specific example of the Pt / TaO provided in conjunction with the present invention. x The / Ti / Ag multifunctional device was initialized, and its retention characteristics under different resistance states were tested for 1000 seconds. The test results show that each resistance state exhibits excellent stability within 1000 seconds, confirming that the device possesses multi-valued non-volatile characteristics under this resistive switching mechanism. Therefore, the dynamic range of the reservoir node can be controlled by adjusting its resistance state.

[0028] Based on the above electrical tests, the present invention provides the following findings: (1) Multifunctional device Pt / TaO x / Ti / Ag exhibits simulated volatile characteristics when not initialized; (2) Multifunctional device Pt / TaO x When / Ti / Ag is not initialized, it has significant dynamic response characteristics: its output current increases monotonically with the increase of the number, amplitude and frequency of the input pulse. This characteristic indicates that the device can nonlinearly map the history of the input signal and the parameters to the response state, and can be used to construct the reservoir node; (3) Multifunctional device Pt / TaO x After initialization, / Ti / Ag exhibits multivalued nonvolatile characteristics and can be used to regulate the dynamic range of the reserve pool nodes.

[0029] Figure 7 This is a current response diagram measured by applying a single pulse to a passive adaptive reservoir node provided in a specific embodiment of the present invention, after adjusting the resistance state of its internal multi-valued non-volatile devices. The applied pulse amplitude is -6V and the pulse width is 20ms. Figure 7 It can be seen that the node output current response monotonically increases as the resistance of device B decreases.

[0030] Figure 8 This is a passive adaptive reserve pool node provided in conjunction with a specific example of the present invention, when executing... Figure 7 The current relaxation curve shown is obtained after pulse excitation, measured at a constant -2V read voltage. Figure 8 It is evident that the resistive state of device B not only determines the initial state of relaxation, but also effectively regulates the dynamic characteristics of the entire relaxation process, thus providing an adjustable dynamic basis for the node.

[0031] Figure 9 Yes Figure 7 and Figure 8 Statistical results on the relationship between the relaxation time and current change at the mid-node and the resistive state of multi-valued non-volatile devices. Figure 9It is evident that the relaxation time monotonically increases with the increase of the resistance state of device B, while the change in current monotonically decreases. This quantitative relationship verifies that the dynamic response range of the node can be effectively adjusted by controlling the resistance state of device B.

[0032] Figure 10 This is a current response diagram of a passive adaptive reservoir node provided in conjunction with a specific example of the present invention, after adjusting the resistance state of its internal multi-valued non-volatile devices, to 16 different pulse sequences. Figure 10 It is evident that this node has the ability to distinguish different input sequences, and the output dynamic range can be controlled by the resistance state of device B.

[0033] Figure 11 This is a current response diagram of a passive adaptive reservoir node provided in conjunction with a specific embodiment of the present invention, under the application of 100 consecutive pulses of different amplitudes. The applied pulses have a pulse width of 80 μs, a frequency of 6.67 kHz, and amplitudes of -4.6V, -4.7V, -4.8V, and -4.9V, respectively. Figure 11 As can be seen, when the input pulse amplitude is -4.8V, the node response current jumps at the 76th pulse; when the input pulse amplitude is -4.9V, the reservoir node current response jumps at the 61st and 95th pulses. These test results indicate that the reservoir node can automatically transition to a new dynamic range when it reaches saturation, and this transition behavior has the capability to be triggered multiple times. This behavior is attributed to the synergistic effect of devices A and B: as the pulse is applied, the resistance of device A decreases, leading to an increase in the node current, which causes the voltage drop across device B to reach its threshold and trigger a resistance change; after the resistance of device B decreases, the voltage within the node is redistributed, achieving adaptive adjustment of the dynamic range, allowing the node to enter a new operating state.

[0034] Based on the above electrical measurements, the present invention further proposes the following findings: (1) The passive adaptive reservoir node is simple to construct and requires no complex external circuitry; (2) Under the same input conditions, the output current response change and relaxation time of the passive adaptive reservoir node can be adjusted by regulating the multi-valued non-volatile TaO. x The device is used to implement this; among which, the larger the resistance of the device, the longer the relaxation time of the reservoir node and the smaller the change in current response; (3) the non-volatile TaO in the adjustment node x The resistive state of the device will not affect its ability to distinguish different input sequences; (4) When a continuous large-amplitude pulse is input, the node can spontaneously transition to a new dynamic range when it reaches saturation, and this transition behavior has multiple triggering capabilities and passive adaptive characteristics.

[0035] Figure 12 This is a schematic diagram illustrating the passive adaptive reservoir system constructed according to the present invention. Figure 13yes Figure 12 The results show a performance comparison between the passive adaptive reservoir system and the traditional reservoir system in predicting Hénon-mapped chaotic systems.

[0036] like Figure 13 Specifically, regions (a) and (b) are time series comparison plots and scatter plots of the predicted and target values ​​of this system, respectively, with a normalized root mean square error (RMSE) of 0.126. Regions (c) and (d) are time series comparison plots and scatter plots of the predicted and target values ​​of the traditional system, respectively, with a normalized RMSE of 0.4413. A smaller normalized RMSE means a closer prediction result to the target value. This comparison shows that, compared to the traditional reserve pool system, the passive adaptive reserve pool system in this embodiment has better prediction performance.

[0037] Figure 14 yes Figure 12 The diagram shows a comparison of the parameter adaptability of the passive adaptive reservoir system and the traditional reservoir system in predicting Hénon-mapped chaotic systems. It illustrates the normalized root mean square error (RMSE) distributions of the two systems across variations in maximum input voltage (8–9 V) and mask length (5–50 mm). The comparison between regions (a) and (b) demonstrates that the passive adaptive reservoir system constructed in this invention maintains excellent prediction performance under different input conditions, with a significantly lower RMS error than the traditional system. This is primarily due to the system's passive adaptive mechanism: the system can spontaneously adjust its dynamic range according to input conditions, thus maintaining ideal prediction accuracy under various parameter configurations. In contrast, the traditional reservoir system, due to its fixed parameters, can only achieve optimal performance under specific input conditions, significantly limiting its practical application.

[0038] Based on the above results, the present invention further proposes the following findings: (1) In the Hénon map chaotic system prediction task, the passive adaptive reservoir system has better prediction accuracy than the traditional system, and its normalized root mean square error is significantly reduced; (2) Compared with the traditional reservoir system, the passive adaptive reservoir system exhibits stronger robustness and can maintain stable prediction performance under a wide range of parameters, including maximum input voltage (8-9V) and mask length (5-50).

[0039] In summary, the passive adaptive reservoir node according to the present invention, through re-study and design of the specific structure and composition of its key components, especially its working mechanism, can spontaneously adjust its dynamic range according to the input signal, achieving adaptability to a wide range of signals without the need for active adjustment circuitry. This provides a more efficient device-level solution for limiting the dynamic range of physical reservoirs, while also possessing comprehensive advantages such as compact structure and ease of operation, thus exhibiting good practical value and application prospects.

[0040] Those skilled in the art will readily understand that the above description is merely a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A TaO-based x The passive adaptive reservoir node of the multifunctional device is characterized by: The reservoir node consists of two identical TaO structures. x Multifunctional devices, namely the first and second TaO x Composed of multifunctional devices, and for the first and second TaO x For a multifunctional device, each component includes a first electrode layer, a functional layer, a barrier layer, and a second electrode layer stacked sequentially from bottom to top, wherein the first electrode layer is made of an inert metal material; the functional layer is made of TaO. x The material is made with x less than 2.5; the barrier layer is made of an inert metal to block metal atoms of the second electrode layer during the preparation of the TaO. x The process of the multifunctional device itself enters the functional layer; the second electrode layer is made of an active metal material; Before performing the initialization operation, the first and second TaO x The multifunctional devices each have oxygen vacancies in their respective functional layers, forming trap energy levels, thereby enabling each TaO x Multifunctional devices utilize charge trapping and detrapping mechanisms to achieve resistive switching behavior, and both possess simulated volatile characteristics; During the initialization operation, the second TaO is... x A positive pulse is applied to the second electrode layer of the multifunctional device, while its first electrode layer is grounded. At this time, the second TaO x The resistive switching mechanism of the multifunctional device is changed to a conductive wire mechanism, and it has multi-valued non-volatile characteristics. When the aforementioned passive adaptive reserve pool node is operational, the first and second TaO will be... x The multifunctional devices are connected in series back-to-back through their respective first electrode layers, and to the first TaO. x A negative bias is applied to the second electrode layer of the multifunction device, wherein the first TaO x The multifunctional device has analog volatile characteristics, and the second TaO x Multifunctional devices possess multi-valued non-volatile characteristics; in this way, the first TaO x Multifunctional devices utilize their analog volatile characteristics to provide different current responses to pulses of different amplitudes or frequencies applied to them, thereby realizing the dynamic behavior of reservoir nodes; The second TaO x Multifunctional devices utilize their multi-valued non-volatile characteristics to adaptively control the dynamic range of reservoir nodes by adjusting their resistance state.

2. The passive adaptive reserve pool node as described in claim 1, characterized in that, The first electrode layer is made of one of the following inert metal materials: Pt, Pd, Au, Ni, ITO, Ti, W, Al, Ta, Hf, TaN, TiN, and TiW; the second electrode layer is made of the following active metal materials: Ag and Cu; the barrier layer is made of one of the following inert metal materials: Pt, Pd, Au, Ni, ITO, Ti, W, Al, Ta, Hf, TaN, TiN, and TiW.

3. The passive adaptive reserve pool node as described in claim 1 or 2, characterized in that, The thickness of the first electrode layer is designed to be 5nm~2000nm, the thickness of the functional layer is designed to be 2nm~100nm, the thickness of the barrier layer is designed to be 2nm~10nm, and the thickness of the second electrode layer is designed to be 10nm~2000nm.

4. The passive adaptive reserve pool node as described in any one of claims 1-3, characterized in that, When the first TaO x When the negative voltage pulse applied to the second electrode layer of the multifunctional device exceeds a preset value, its resistance decreases as the number of pulses increases; simultaneously, the second TaO... x The voltage drop across the multifunctional device increases until it reaches its threshold voltage, at which point the resistance decreases; at this point, the voltage is redistributed to the first TaO. x The multifunctional device achieves a new dynamic equilibrium, thereby enabling the entire reservoir node to reach a new dynamic range.

5. The passive adaptive reserve pool node as described in any one of claims 1-4, characterized in that, When the first TaO x When the amplitude of the negative voltage pulse applied to the second electrode layer of the multifunctional device is greater than the preset value, the current response of the entire reservoir node tends to saturate as the number of pulses increases. When the saturation state is reached, the entire reservoir node will automatically jump to a new dynamic operating range, and this jump process can be repeated to achieve multiple adaptive adjustments of the dynamic range.

6. The passive adaptive reserve pool node as described in any one of claims 1-5, characterized in that, For the second TaO x For multifunctional devices, it is preferable to adjust the relaxation time and current change of the reservoir node by controlling its resistance state or resistance, thereby effectively adjusting the dynamic response range of the entire reservoir node.

7. The passive adaptive reserve pool node as described in any one of claims 1-6, characterized in that, First and second TaO x The multifunctional device is preferably fabricated in a single photolithography operation, and there is no need to consider the resistance matching problem during the initialization operation.

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