Movable air exhaust structure and thin film deposition equipment

Abstract

The invention relates to a movable air exhaust structure and thin film deposition equipment, and the air exhaust structure comprises a side air exhaust channel which is arranged at the side part of a reaction chamber; the side air exhaust ring is arranged in the side air exhaust channel, and the side air exhaust ring is mounted below a spray header of the reaction chamber; the bottom air exhaust ring is mounted at the top of a bottom air exhaust channel, and the bottom air exhaust channel is arranged at the bottom of the reaction chamber; the flow suppression ring is movably arranged between the bottom air exhaust ring and the bottom of the reaction chamber; the flow restraining ring is used for controlling the relative flow proportion of the side air exhaust channel and the bottom air exhaust channel through vertical movement, and dynamic air flow optimization is achieved. Therefore, airflow distribution can be controlled more finely, airflow uniformity in each area in the cavity is ensured, dead zones and vortexes are reduced, and consistency and quality of deposition are improved. Reaction by-products and unreacted gas can be more effectively discharged, the concentration of the reaction by-products and the unreacted gas in the cavity is reduced, and pollution and side reaction are reduced.

Description

Technical Field

[0001] This application relates primarily to the field of semiconductor equipment, and more particularly to a movable air extraction structure and a thin film deposition apparatus. Background Technology

[0002] In the semiconductor device manufacturing process, chemical vapor deposition (CVD) equipment is the core equipment for thin film deposition. During the thin film deposition process, various gas reactions produce some reaction byproducts. These byproducts affect the number and movement of particles in the reaction chamber, and may even lead to particle contamination of the wafer, thus significantly impacting the process results. Generally, after the process is completed, excess reaction gases and byproducts can be extracted from the reaction chamber using the evacuation structure within the CVD equipment.

[0003] In the existing technology, there is only one fixed exhaust outlet in the reaction chamber, which cannot be directly adjusted. This results in poor exhaust uniformity and low efficiency, affecting the effect of thin film deposition process. Summary of the Invention

[0004] One objective of this application is to provide a movable suction structure and thin film deposition equipment to solve the problems of inability to adjust suction uniformity, insufficient by-product discharge efficiency, and dead zone contamination in the cavity in the prior art.

[0005] According to one aspect of this application, a movable air extraction structure is provided, the air extraction structure comprising:

[0006] A side exhaust channel is located on the side of the reaction chamber;

[0007] A side-extraction ring is disposed within the side-extraction channel, and the side-extraction ring is installed below the spray head in the reaction chamber.

[0008] A bottom evacuation ring is installed at the top of a bottom evacuation channel, which is located at the bottom of the reaction chamber.

[0009] A flow-suppressing ring is movably disposed between the bottom suction ring and the bottom of the reaction chamber;

[0010] The flow-suppressing ring is used to control the relative flow rate ratio between the side air extraction channel and the bottom air extraction channel by moving up and down, thereby achieving dynamic airflow optimization.

[0011] Optionally, the flow suppression ring and the bottom suction ring are provided with vent holes at corresponding positions, and the diameter of the vent hole on the flow suppression ring is smaller than the diameter of the vent hole on the bottom suction ring.

[0012] Optionally, the air extraction structure includes a drive unit, a transmission rod, and a sealing structure;

[0013] The drive unit is connected to the flow suppression ring via the transmission rod and is sealed using the sealing structure.

[0014] When the drive unit is started, it drives the flow suppression ring to move up and down through the transmission rod.

[0015] Optionally, the drive unit is a cylinder, the sealing structure includes a bellows and a sealing ring, and the transmission rod is an aluminum connecting rod;

[0016] The bellows surrounds the aluminum connecting rod;

[0017] The sealing ring is used to connect the reaction chamber to the aluminum connecting rod.

[0018] The aluminum connecting rod is connected to a cylinder located at the bottom of the reaction chamber.

[0019] Optionally, the relative flow rate ratio between the side exhaust channel and the bottom exhaust channel is continuously controllable within the range of 1:2 to 2:1.

[0020] Optionally, when the flow suppression ring is in the first position, the relative flow rate of the side exhaust channel is greater than the relative flow rate of the bottom exhaust channel, which is used to increase the wafer center flow rate in the reaction chamber.

[0021] When the flow suppression ring is in the second position, the relative flow rate of the side extraction channel is less than the relative flow rate of the bottom extraction channel, which is used to increase the wafer edge flow rate in the reaction chamber.

[0022] Optionally, the air extraction structure further includes a controller connected to the drive unit and configured to:

[0023] Generate position commands for the flow suppression ring based on real-time monitoring data;

[0024] According to the position command, the drive unit is controlled to move the flow suppression ring to the target position in order to dynamically balance the relative flow ratio between the side air extraction channel and the bottom air extraction channel.

[0025] Optionally, the controller is configured to:

[0026] When the flow rate at the center of the wafer is lower than the first set threshold, the flow suppression ring is controlled to move downward to increase the flow rate of the bottom extraction channel;

[0027] When the wafer edge flow rate is lower than the second set threshold, the flow suppression ring is controlled to move upward to increase the flow rate of the side exhaust channel, wherein the first set threshold is less than the second set threshold.

[0028] Optionally, the flow resistance is maximized when the flow-suppressing ring moves to a position close to the lower surface of the bottom suction ring; no flow resistance is generated when the flow-suppressing ring moves to a position close to the bottom of the reaction chamber.

[0029] According to another aspect of this application, a thin film deposition apparatus is also provided, comprising:

[0030] Multiple reaction chambers, each containing a spray head and a wafer, are used to perform thin-film deposition processes on the wafer; and

[0031] As described above, the air extraction structure includes side air extraction channels connected to the outlets of the side air extraction rings in each reaction chamber, bottom air extraction channels connected to the outlets of the bottom air extraction rings in each reaction chamber, and a flow-suppressing ring provided between the bottom air extraction ring and the bottom of the chamber, so that the side and bottom of each reaction chamber can be extracted simultaneously by adjusting the position of the flow-suppressing ring.

[0032] Compared with the prior art, this application provides a movable air extraction structure, which includes:

[0033] A side-extraction channel is located on the side of the reaction chamber; a side-extraction ring is disposed within the side-extraction channel and installed below the spray head of the reaction chamber; a bottom-extraction ring is installed at the top of the bottom-extraction channel, which is located at the bottom of the reaction chamber; a flow-suppressing ring is movably disposed between the bottom-extraction ring and the bottom of the reaction chamber; the flow-suppressing ring is used to control the relative flow ratio between the side-extraction channel and the bottom-extraction channel by moving up and down, thereby achieving dynamic airflow optimization. Simultaneous bottom and side extraction allows for more precise control of airflow distribution, ensuring uniform airflow in all areas of the chamber, reducing dead zones and eddies, and improving deposition consistency and quality; the dual-channel extraction increases the extraction path, enabling more effective removal of reaction byproducts and unreacted gases, reducing their concentration within the chamber, and minimizing contamination and side reactions. Attached Figure Description

[0034] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings, wherein:

[0035] Figure 1 A schematic diagram of a movable air extraction structure according to one aspect of this application is shown.

[0036] Figure 2 This invention provides a schematic diagram of the structure of a secondary suction ring on the bottom suction channel in one embodiment of the present application.

[0037] Figure 3 This diagram illustrates the gas flow rate below the SHD in side-extraction mode according to one embodiment of this application.

[0038] Figure 4 This diagram illustrates the gas flow rate below the SHD in bottom-pump mode according to one embodiment of this application.

[0039] Figure 5 This diagram illustrates the gas flow rate below the SHD in dual-channel mode according to one embodiment of this application.

[0040] Figure 6 This invention provides a schematic diagram of the speed normalization curves for three modes below SHD in one embodiment of the present application.

[0041] Figure 7 This diagram illustrates the gas flow rate above the wafer in a side-pull mode according to one embodiment of this application.

[0042] Figure 8 This diagram illustrates the gas flow rate above the wafer in bottom-extraction mode according to one embodiment of this application.

[0043] Figure 9 This diagram illustrates the gas flow rate above the wafer in dual-channel mode according to one embodiment of this application.

[0044] Figure 10 This diagram illustrates the normalized speed curves for three modes above the wafer in one embodiment of this application.

[0045] The same or similar reference numerals in the accompanying drawings represent the same or similar parts. Detailed Implementation

[0046] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0047] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein, and therefore this application is not limited to the specific embodiments disclosed below.

[0048] In the description of this application, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0049] Furthermore, the terms “up,” “down,” “left,” “right,” “top,” “bottom,” “horizontal,” and “vertical” used in the following description should be understood as the orientations shown in the paragraph and related figures. This relative terminology is for illustrative purposes only and does not imply that the described device must be manufactured or operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0050] It is understood that although terms such as “first,” “second,” “third,” etc., may be used here to describe various pipes, channels, components, areas, layers, and / or parts, these components, areas, layers, and / or parts should not be limited by these terms, and these terms are only used to distinguish different pipes, channels, components, areas, layers, and / or parts.

[0051] The evacuation structure of the CVD equipment cavity is mainly composed of two parts: an evacuation ring and an evacuation channel. The evacuation ring is used to form a uniform evacuation area in the cavity, while the evacuation channel is used to quickly export the process waste gas and by-products (PA) in the cavity to the subsequent treatment system.

[0052] Depending on the location of the extraction ring and extraction channel on the cavity, the extraction modes include side extraction mode and bottom extraction mode. The two modes have structural differences and are suitable for different deposition scenarios.

[0053] Currently, both of the two extraction modes of CVD equipment chambers have problems that are difficult to balance. The bottom extraction mode has the advantage of laminar flow but insufficient PA discharge efficiency, while the side extraction mode has PA removal capabilities but dead zone contamination problems.

[0054] With the continuous advancement of semiconductor coating technology, the requirements for controlling the evacuation speed and uniformity within the CVD equipment cavity are becoming increasingly stringent. There is an urgent need for an evacuation structure design that can balance evacuation uniformity, PA discharge efficiency, and the requirement for a dead-zone-free cavity, in order to overcome the limitations of existing technologies. To address the aforementioned technical problems, this application proposes a movable evacuation structure for the equipment cavity.

[0055] Figure 1 A schematic diagram of a movable air extraction structure according to one aspect of this application is shown, the air extraction structure comprising:

[0056] A side exhaust channel 20 is provided on the side of the reaction chamber 10;

[0057] A side-extraction ring 201 is disposed in the side-extraction channel 20, and the side-extraction ring 201 is installed below the spray head 101 of the reaction chamber 10.

[0058] A bottom extraction ring 301 is installed at the top of a bottom extraction channel 30, which is located at the bottom of the reaction chamber 10.

[0059] The flow suppression ring 302 is movably disposed between the bottom extraction ring 301 and the bottom of the reaction chamber 10; the flow suppression ring 302 is used to control the relative flow ratio between the side extraction channel 20 and the bottom extraction channel 30 by moving up and down, so as to achieve dynamic airflow optimization.

[0060] A side-extraction channel is opened in the middle of the chamber, and a side-extraction ring 201 is set below the spray head (SHD) outlet 101 to realize dual-channel air extraction of the chamber. A flow-suppressing ring 302 is designed between the bottom air extraction ring 301 and the bottom air extraction port as a secondary air extraction ring. By moving the flow-suppressing ring 302, the flow resistance of the bottom air extraction channel 30 is adjusted, and the flow ratio of the side air extraction channel 20 and the bottom air extraction channel 30 is controlled in a coordinated manner to achieve uniform distribution of airflow velocity on the wafer surface.

[0061] Continue to refer to Figure 1 The dual-channel a is formed by the side air extraction channel 20 and the bottom air extraction channel 30. The arrows in the figure indicate the airflow direction. It can be seen that the airflow passes through the side air extraction channel 20 and the bottom air extraction channel 30 and finally exits the cavity. By simultaneously extracting air from the bottom and the side, the airflow distribution can be controlled more precisely, ensuring that the airflow in each area of ​​the cavity is uniform, reducing dead zones and eddies, and improving the consistency and quality of deposition.

[0062] The dual-channel extraction increases the extraction path, which can more effectively remove reaction byproducts and unreacted gases, reduce their concentration in the chamber, and reduce pollution and side reactions.

[0063] By adjusting the flow suppression ring, it is possible to flexibly adjust the bottom extraction and side extraction gas extraction ratio according to the characteristics of different processes and steps.

[0064] In one embodiment of this application, as Figure 2 As shown, the flow suppression ring 302 and the bottom suction ring 301 are provided with corresponding ventilation holes, and the diameter of the ventilation hole 3021 on the flow suppression ring 302 is smaller than the diameter of the ventilation hole 3011 on the bottom suction ring 301.

[0065] The bottom extraction ring 301 can be located at the top of the bottom extraction channel, directly facing the reaction zone, serving as the main airflow inlet. The bottom extraction ring 301 has a large aperture, which can achieve low flow resistance.

[0066] The aperture of the flow-suppressing ring 302 is smaller than that of the bottom extraction ring 301 of the previous level, thus forming a stepped converging flow channel. The small hole structure forces the airflow vertically downward, suppresses the edge vortex, and accelerates the airflow through the small hole, thereby driving the reaction byproducts through the bottom extraction channel.

[0067] In one embodiment of this application, the flow resistance is at its maximum when the flow-suppressing ring 302 moves to be close to the lower surface of the bottom suction ring 301; when the flow-suppressing ring 302 moves to be close to the bottom of the reaction chamber 10, no flow resistance is generated.

[0068] As the flow suppression ring 302 moves toward the bottom suction ring 301, the distance between them gradually decreases. The vent holes (i.e., small holes) on the flow suppression ring 302 gradually approach the large holes of the bottom suction ring, reducing the equivalent flow area and thus increasing the flow resistance. The flow resistance is at its maximum when the flow suppression ring 302 is in close contact with the lower surface of the bottom suction ring 301.

[0069] The flow suppression ring 302 moves away from the bottom suction ring 301, that is, it gradually approaches the bottom of the cavity. The distance between it and the bottom suction ring 301 gradually increases, the equivalent flow area increases, and the flow resistance decreases. When it moves to be close to the bottom of the cavity, almost no flow resistance is generated.

[0070] In one embodiment of this application, the air extraction structure includes a drive unit 40, a transmission rod 50, and a sealing structure 60; the drive unit 40 is connected to the flow suppression ring 302 through the transmission rod 50, and the sealing structure 60 is used to achieve sealing; when the drive unit 40 is started, the flow suppression ring 302 is driven to move up and down through the transmission rod 50.

[0071] Continue to refer to Figure 1 The drive unit 40 is connected to the flow suppression ring 302. When the drive unit 40 is started, the transmission rod 50 pushes or pulls the flow suppression ring 302 to move in the vertical direction, for example, from close to the lower surface of the bottom suction ring 301 to the bottom of the cavity. The flow resistance of the bottom suction channel is changed by the change of the equivalent flow area between the flow suppression ring 302 and the bottom suction ring 301, so as to achieve dynamic balance of the flow ratio of the two channels.

[0072] The sealing structure 60 encloses the transmission rod 50 and is located at the through hole at the bottom of the cavity, allowing the drive unit 40 to maintain the vacuum seal inside the cavity while moving the flow suppression ring 302 outside the cavity.

[0073] In one embodiment of this application, the drive unit 40 is a cylinder, the sealing structure 60 includes a bellows and a sealing ring, and the transmission rod 50 is an aluminum connecting rod.

[0074] The bellows surrounds the aluminum connecting rod; the sealing ring is used to connect the reaction chamber and the aluminum connecting rod; the aluminum connecting rod is connected to a cylinder located at the bottom of the reaction chamber.

[0075] The bellows and sealing ring form a sealing structure to ensure vacuum sealing when the flow suppression ring moves; the bellows allows the drive rod to move axially while isolating the pressure difference between the inside and outside of the cavity, and the sealing ring provides a static seal to prevent gas leakage.

[0076] In one embodiment of this application, the flow suppression ring is installed between the bottom suction ring and the bottom of the cavity via an aluminum rod (with a rubber ring sealing the cavity bottom) connected by a cylinder. The flow suppression ring needs to be installed first, followed by the bottom suction ring, and finally the heating plate assembly.

[0077] Driven by a cylinder, the flow-damping ring can move between the bottom of the bottom suction ring and the top surface of the cavity bottom. The holes of the flow-damping ring correspond one-to-one with those of the bottom suction ring, leaving space for a bottom channel. The diameter of the flow-damping ring holes is smaller than that of the bottom suction ring, and the airflow passes through the two holes, thus adjusting the flow resistance.

[0078] In one embodiment of this application, the relative flow rate ratio between the side exhaust channel and the bottom exhaust channel is continuously controllable within the range of 1:2 to 2:1.

[0079] When the flow-suppressing ring 302 moves between the bottom suction ring 301 and the bottom of the cavity, it adjusts the bottom suction air resistance and flow rate, thereby changing the distribution ratio between the side suction channel and the bottom suction channel. The relative flow ratio can be continuously adjusted from 1:2 to 2:1.

[0080] Following the above embodiment, when the flow suppression ring is in the first position, the relative flow rate of the side exhaust channel is greater than the relative flow rate of the bottom exhaust channel, which is used to increase the wafer center flow rate in the reaction chamber.

[0081] When the flow suppression ring is in the second position, the relative flow rate of the side extraction channel is less than the relative flow rate of the bottom extraction channel, which is used to increase the wafer edge flow rate in the reaction chamber.

[0082] In one embodiment of this application, the flow resistance and flow rate distribution of the flow suppression ring at different positions can be flexibly adjusted to change the pumping ratio between side pumping and bottom pumping, as shown in Table 1:

[0083]

[0084] Table 1

[0085] The flow suppression ring 302 moves vertically from a first position to a second position. The first position is where the flow suppression ring 302 is flush against the lower surface of the bottom extraction ring, and the second position is where it is flush against the bottom of the cavity. At the first position, the side extraction ratio is increased to 2:1, increasing the wafer center flow rate by, for example, 10% to 15%. When moved to the second position, the bottom extraction ratio is increased to 2:1, increasing the wafer edge flow rate by, for example, 40% to 60%. This increased flow rate leads to a higher concentration of reactive gases in the edge region, improving the edge deposition rate and enhancing edge reactions, such as edge etching compensation or sealing ring deposition.

[0086] In one embodiment of this application, the air extraction structure further includes a controller (not shown), connected to the drive unit, configured to: generate a position command for the flow suppression ring based on real-time monitoring data; and control the drive unit to move the flow suppression ring to a target position based on the position command, so as to dynamically balance the relative flow ratio between the side air extraction channel and the bottom air extraction channel.

[0087] The monitored data can be the flow rate of both channels, such as using flow meters to monitor the flow rate of the bottom and side extraction channels separately; or it can be the flow velocity on the wafer surface, which can be monitored in real time by scanning the gas flow velocity in a specified area of ​​the wafer (such as the edge area). Based on the monitored data, the controller determines whether the flow suppression ring needs to be moved up or down to the target position. For example, if the flow velocity at the edge of the wafer is detected to be high, the flow suppression ring needs to be moved up, and it is determined that it needs to be moved up by 2mm. This is then driven by the drive unit to move the flow suppression ring up by 2mm, reducing the edge flow velocity and redistributing the flow ratio of the two channels, thus improving the film thickness uniformity.

[0088] In one embodiment of this application, when the drive unit uses a cylinder, the controller pushes the flow suppression ring to move through the cylinder and connecting rod by monitoring data. A displacement sensor can be built into the cylinder so that the movement position of the flow suppression ring can be fed back in real time.

[0089] Following the above embodiments, the controller is configured as follows:

[0090] When the flow rate at the center of the wafer is lower than the first set threshold, the flow suppression ring is controlled to move downward to increase the flow rate of the bottom extraction channel;

[0091] When the wafer edge flow rate is lower than the second set threshold, the flow suppression ring is controlled to move upward to increase the flow rate of the side exhaust channel, wherein the first set threshold is less than the second set threshold.

[0092] The first set threshold is the critical value of the wafer center flow rate. When the wafer center flow rate is less than the first set threshold, it indicates that the gas rate in the central region is insufficient, which leads to the delay of reactant replenishment and the accumulation of by-products. Therefore, it is necessary to move the flow suppression ring down to reduce the flow resistance of the bottom gas extraction channel, thereby increasing the proportion of bottom gas extraction flow and increasing the flow rate in the wafer center region.

[0093] The second set threshold is the critical value of the wafer edge flow rate. When the wafer edge flow rate is less than the second set threshold, the edge eddy causes gas retention and triggers excessive reaction. At this time, the flow suppression ring needs to be moved upward, the flow resistance of the side extraction channel is reduced, the side extraction flow rate ratio is increased, and the wafer edge flow rate is increased, thereby reducing the edge etching non-uniformity.

[0094] Combination Figure 1According to another aspect of this application, a thin film deposition apparatus is also provided, comprising: multiple reaction chambers, each containing a spray head and a wafer, for performing a thin film deposition process on the wafer; and an extraction structure as described above, wherein side extraction channels are respectively connected to the outlets of side extraction rings in each reaction chamber, bottom extraction channels are respectively connected to the outlets of bottom extraction rings in each reaction chamber, and a flow-suppressing ring is provided between the bottom extraction ring and the bottom of the chamber, so as to simultaneously extract air from the sides and bottom of each reaction chamber by adjusting the position of the flow-suppressing ring.

[0095] With its simple, practical, and highly flexible structure, it can adjust the flow ratio of the two channels according to the needs of the process, as well as increase the gas extraction rate and improve the uniformity of gas extraction in the reaction chamber, thereby increasing the equipment's production capacity.

[0096] For CVD equipment, in a single evacuation mode, the bottom evacuation mode can form a vertical laminar flow from top to bottom, but the evacuation stroke inside the cavity is long, making it difficult to remove PA on the wafer surface (center); the side evacuation mode has flexible positioning and a short evacuation stroke in the wafer area, which is conducive to removing PA from the wafer surface, but it is easy to form dead zones at the bottom of the cavity and other locations.

[0097] Specifically, bottom-extraction mode effectively avoids turbulence of process gases within the cavity, ensuring a uniform distribution of process gases on the wafer surface and providing a foundation for consistent thin film deposition. Side-extraction structures are typically located on the cavity sidewall near the wafer, significantly shortening the extraction stroke around the wafer. This allows the extraction force to act more directly on the wafer surface, resulting in short-stroke extraction. This effectively captures and removes PA (particulate matter) generated on the wafer surface, particularly at the wafer edges and center, contributing to improved wafer surface cleanliness.

[0098] In one embodiment of this application, simulation experiments were conducted on the bottom-pull mode, the side-pull mode, and the dual-channel mode described in the above embodiments of this application, respectively, with the simulation conditions shown in Table 2:

[0099]

[0100] Table 2

[0101] The pressure measured at 1 mm below the SHD was 600 torr in all three modes. A schematic diagram of the gas flow rate in the side-pump mode is shown below. Figure 3 As shown, the flow velocity range is Range = 0.031 m / s, the maximum flow velocity is Max = 0.045 m / s, and the minimum flow velocity is Min = 0.014 m / s; the flow velocity in bottom pumping mode is as follows. Figure 4As shown: Range = 0.025 m / s, Max = 0.039 m / s, Min = 0.014 m / s; the flow rate in dual-channel mode is as follows: Figure 5 As shown: Range = 0.032 m / s, Max = 0.046 m / s, Min = 0.014 m / s. The velocity normalization curve is as follows: Figure 6 As shown, within a diameter range of 300mm, the SHD outlet position under different structures exhibits a low velocity at the center and a high velocity at the edge. Due to the influence of the edge flow field, the bottom pumping rate curve fluctuates in the 200-300mm range (distance from the wafer center).

[0102] The pressure measured at 1 mm above the wafer was 600 torr in all three modes. A schematic diagram of the gas flow rate on the wafer surface during the side-extraction mode is shown below. Figure 7 As shown, the velocities are: Range = 0.096 m / s, Max = 0.097 m / s, Min = 0.0005 m / s; the flow velocity diagram in bottom pumping mode is shown below. Figure 8 As shown, the velocities are: Range = 0.095 m / s, Max = 0.096 m / s, Min = 0.0005 m / s; the flow velocity diagram in dual-channel mode is shown below. Figure 9 As shown, the velocities are: Range = 0.092 m / s, Max = 0.092 m / s, Min = 0.0002 m / s. The velocity normalization curve is shown below. Figure 10 As shown, within a 300mm diameter range, the velocity in the center of the wafer surface is low, while the velocity at the edge is high; the dual-channel structure exhibits better velocity uniformity (high points are lower, and the curve is smoother).

[0103] The simulation results show that in the single-mode, the bottom-pump mode has a long pumping path because the pumping structure is located at the bottom of the cavity. As a result, it is difficult to form a sufficient negative pressure to quickly remove the process byproducts (PA) in the central area of ​​the wafer surface. The residual PA can have an adverse effect on the quality of the thin film on the wafer surface, such as causing uneven film composition and increased defect rate.

[0104] In a single side-extraction mode, the exhaust airflow is mainly directed horizontally from the side wall exhaust port, resulting in dead zones in areas far from the exhaust port, such as the bottom and corners of the cavity, where the airflow cannot effectively cover the dead zones. These dead zones easily accumulate residual process gases or byproducts, which may not only re-evaporate and contaminate the wafers in subsequent processes but also increase the difficulty and frequency of cavity cleaning, raising equipment maintenance costs and downtime.

[0105] The dual-channel extraction design of this application uses a cylinder to move a flow-damping ring up and down in the bottom region, adjusting the air resistance and flow rate at the bottom, thereby changing the distribution ratio of bottom and side extraction. This allows for switching between the advantages of bottom and side extraction, and the adjustment range can be further expanded by adjusting the orifice diameter of the extraction ring. Simultaneous extraction from the bottom and sides allows for more precise control of airflow distribution, ensuring uniform airflow in all areas of the cavity, reducing dead zones and eddies, and improving the consistency and quality of deposition. The dual-channel extraction increases the extraction path, enabling more effective removal of reaction byproducts and unreacted gases, reducing their concentration in the cavity, and minimizing contamination and side reactions.

[0106] It should be noted that the illustrations provided in the above embodiments are only schematic representations of the basic concept of this application. Therefore, the drawings only show the components relevant to this application and are not drawn according to the actual number, shape, and size of the components in the actual implementation. In the actual implementation, the form, quantity, and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex. To keep the illustrations as concise as possible, not all structures are shown in the drawings.

[0107] The basic concepts have been described above. Obviously, for those skilled in the art, the above disclosure is merely illustrative and does not constitute a limitation of this application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this application, and therefore remain within the spirit and scope of the exemplary embodiments of this application.

[0108] Meanwhile, this application uses specific terms to describe embodiments of the application. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of the application.

[0109] Therefore, it should be emphasized and noted that the references to "an embodiment," "an alternative embodiment," or "an alternative embodiment" in different locations throughout this specification do not necessarily refer to the same embodiment. Furthermore, certain features, structures, or characteristics of one or more embodiments of this application can be appropriately combined.

[0110] In some embodiments, numbers describing the quantity of components and attributes are used. It should be understood that such numbers used in the description of embodiments are modified in some examples by the terms "approximately," "approximately," or "generally." Unless otherwise stated, "approximately," "approximately," or "generally" indicates that the numbers are allowed to vary by ±20%.

[0111] Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may be changed depending on the characteristics required by individual embodiments. In some embodiments, the numerical parameters should take into account a specified number of significant digits and employ a general method of digit preservation. Although the numerical ranges and parameters used to confirm their breadth of application in some embodiments of this application are approximate values, in specific embodiments, such values ​​are set as precisely as feasible.

Claims

1. A mobile pumping structure, characterized by, The gas extraction structure comprises: a side gas extraction channel arranged at a side of the reaction chamber; a side gas extraction ring arranged in the side gas extraction channel, the side gas extraction ring being arranged below a shower head of the reaction chamber; a bottom gas extraction ring arranged at a top of a bottom gas extraction channel arranged at a bottom of the reaction chamber; a flow control ring movably arranged between the bottom gas extraction ring and the bottom of the reaction chamber; the flow control ring is used to control a relative flow ratio of the side gas extraction channel and the bottom gas extraction channel by moving up and down, so as to realize dynamic airflow optimization.

2. The gas extraction structure according to claim 1, characterized in that, The flow control ring and the bottom gas extraction ring are provided with corresponding vent holes, and a diameter of the vent hole on the flow control ring is smaller than a diameter of the vent hole on the bottom gas extraction ring.

3. The gas extraction structure according to claim 1, characterized by The gas extraction structure comprises a driving unit, a transmission rod and a sealing structure; the driving unit is connected with the flow control ring through the transmission rod, and the sealing structure is used for sealing; when the driving unit is started, the flow control ring is driven to move up and down through the transmission rod.

4. The gas extraction structure according to claim 3, characterized by The driving unit is a cylinder, the sealing structure comprises a bellows and a sealing rubber ring, and the transmission rod is an aluminum connecting rod; the bellows is arranged around the aluminum connecting rod; the sealing rubber ring is used to connect a connecting position of the reaction chamber and the aluminum connecting rod; the aluminum connecting rod is connected with the cylinder arranged at the bottom of the reaction chamber.

5. The gas extraction structure according to claim 1, characterized by The relative flow ratio of the side gas extraction channel and the bottom gas extraction channel is continuously controllable in a range of 1:2 to 2:

1.

6. The gas extraction structure according to claim 1, characterized by When the flow control ring is located at a first position, the relative flow of the side gas extraction channel is greater than that of the bottom gas extraction channel, so as to increase a wafer center flow rate in the reaction chamber; When the flow control ring is located at a second position, the relative flow of the side gas extraction channel is less than that of the bottom gas extraction channel, so as to increase a wafer edge flow rate in the reaction chamber.

7. The gas extraction structure according to claim 3, characterized by The gas extraction structure further comprises a controller connected to the driving unit and configured to: generate a position instruction of the flow control ring according to real-time monitoring data; control the driving unit to move the flow control ring to a target position according to the position instruction, so as to dynamically balance the relative flow ratio of the side gas extraction channel and the bottom gas extraction channel.

8. The gas extraction structure according to claim 7, characterized by The controller is configured to: when the wafer center flow rate is lower than a first set threshold, control the flow control ring to move downward to increase the flow of the bottom gas extraction channel; when the wafer edge flow rate is lower than a second set threshold, control the flow control ring to move upward to increase the flow of the side gas extraction channel, wherein the first set threshold is smaller than the second set threshold.

9. The gas extraction structure according to claim 1, characterized by When the flow control ring moves to closely adhere to a lower surface of the bottom gas extraction ring, the flow resistance is maximum; when the flow control ring moves to closely adhere to a bottom of the reaction chamber, no flow resistance is generated.

10. A thin film deposition apparatus, characterized by, comprises: a plurality of reaction chambers, each of which comprises a shower head and a wafer, and performs a thin film deposition process on the wafer; and The gas extraction structure according to any one of claims 1-9, wherein the side extraction channels are respectively connected to the gas outlets of the side extraction rings in the reaction chambers, the bottom extraction channels are respectively connected to the gas outlets of the bottom extraction rings of the reaction chambers, and a flow suppression ring is arranged between the bottom extraction ring and the chamber bottom, so as to simultaneously extract the side and bottom of each reaction chamber by adjusting the position of the flow suppression ring.

Images