Plasma polishing solution as well as preparation method and application thereof
By using acidic and alkaline components in the plasma polishing solution, the problems of low polishing efficiency and environmental pollution of the TC4 movable support are solved, achieving efficient and safe polishing results, reducing polishing time and ensuring environmental friendliness.
Patent Information
- Application Number
- CN202511655988.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-12
- Publication Date
- 2026-02-06
AI Technical Summary
Traditional polishing methods are inefficient for TC4 movable supports, difficult to polish complex shapes, have unstable polishing quality, and cause environmental pollution problems. In particular, chemical polishing uses highly corrosive solvents, which affect health and the environment.
A plasma polishing solution, consisting of an acidic portion (ammonium salts and halides) and an alkaline portion (alkaline compounds), is used to achieve efficient polishing of the TC4 movable support by heating and polishing under voltage.
It achieves environmentally friendly and efficient TC4 movable bracket polishing, significantly reducing polishing time, ensuring high safety, and using no corrosive acid components, with a wide range of water sources.
Smart Images

Figure CN121472872A_ABST
Abstract
Description
Technical Field
[0001] This invention belongs to the field of plasma polishing technology, and relates to a plasma polishing fluid, its preparation method, and its application. Background Technology
[0002] Currently, the materials commonly used for 3D printing of removable partial dentures include cobalt-chromium alloys, titanium alloys, and pure titanium. Among them, TC4 material, as a representative titanium alloy, has advantages such as low density, good biocompatibility, and excellent mechanical properties, and its use in 3D printing movable supports is receiving increasing attention and recognition.
[0003] Polishing is a crucial step in the fabrication of the TC4 movable bracket. Traditional polishing methods include mechanical polishing, electrolytic polishing, and chemical polishing. However, mechanical polishing suffers from low efficiency, difficulty in polishing complex shapes, inconsistent polishing quality, and reliance on the experience and skill of the polishing personnel. Chemical and electrolytic polishing processes utilize large amounts of chemical reagents, especially highly corrosive solvents such as nitric acid and hydrofluoric acid, which not only impact the physical and mental health of the polishing personnel but also have a certain environmental impact.
[0004] This shows that polishing has become a major factor restricting the application of TC4 movable supports. Developing an environmentally friendly, efficient, and safe polishing method for TC4 movable supports is an important prerequisite for promoting the application of 3D printed TC4 movable supports. Summary of the Invention
[0005] In view of this, one objective of the present invention is to provide a plasma polishing fluid; a second objective of the present invention is to provide a method for preparing a plasma polishing fluid; a third objective of the present invention is to provide an application of a plasma polishing fluid in polishing a dental TC4 movable support; and a fourth objective of the present invention is to provide a method for polishing a TC4 movable support with a plasma polishing fluid.
[0006] To achieve the above objectives, the present invention provides the following technical solution: A plasma polishing solution, the plasma polishing solution comprising an acidic portion and an alkaline portion; The acidic portion consists of ammonium salts and halides, wherein the ammonium salts are any one or several different types, and the halides are any one or several different types. The alkaline portion can be any one or more alkaline compounds.
[0007] Preferably, the ammonium salt contains NH4. + Compounds; the halides are compounds containing halide ions.
[0008] Preferably, the alkaline compound refers to a compound that is alkaline when dissolved in water alone.
[0009] Preferably, the plasma polishing solution comprises 0.5 to 3 parts of ammonium salt, 0.1 to 2 parts of halide, 0.5 to 4 parts of alkaline compound, and 100 parts of water.
[0010] More preferably, the plasma polishing solution contains 2.4 parts of ammonium salt, 1.35 parts of halide, 3.75 parts of alkaline compound, and 100 parts of water.
[0011] More preferably, the plasma polishing solution contains 0.5 parts of ammonium salt, 0.1 parts of halide, 0.5 parts of alkaline compound, and 100 parts of water.
[0012] Preferably, the water level is any one of distilled water, purified water, tap water, or deionized water.
[0013] The preparation method of the above-mentioned plasma polishing solution is as follows: Add water to a container, heat to 80-85°C, then add the acidic and alkaline portions in sequence, stirring until fully dissolved.
[0014] The above-mentioned plasma polishing solution was used in polishing the TC4 movable support.
[0015] The method for polishing the TC4 movable support with the above-mentioned plasma polishing solution is as follows: the plasma polishing solution described in claims 1 to 7 is placed in a polishing tank, heated to 85 to 95°C, and the TC4 movable support is placed in a pre-placed bracket under a voltage of 320 to 380V. The polishing is carried out for 600 to 900 seconds, and then the TC4 movable support is removed.
[0016] The beneficial effects of the present invention are as follows: The present invention discloses a plasma polishing solution, which mainly includes an acidic part (ammonium salt and halide) and an alkaline part, which can be used for polishing TC4 movable supports and has the following advantages: (1) The plasma polishing solution disclosed in the present invention does not contain any corrosive or dangerous acid components, which ensures the safety of polishing TC4 movable supports; (2) When the plasma polishing solution disclosed in the present invention is used to polish TC4 movable supports, the polishing time of a single support can be reduced by more than 80% compared with the traditional manual polishing process; (3) The water used in the plasma polishing solution disclosed in the present invention has a wide range of sources, and tap water, distilled water or purified water can meet the requirements.
[0017] Other advantages, objectives, and features of the invention will be set forth in part in the description which follows, and in part will be apparent to those skilled in the art from the following examination, or may be learned from practice of the invention. The objectives and other advantages of the invention can be realized and obtained through the following description. Attached Figure Description
[0018] To make the objectives, technical solutions, and advantages of this invention clearer, a preferred description of the invention will be provided below with reference to the accompanying drawings, in which: macroscopic images of the TC4 movable bracket before and after polishing are shown below. Figure 1 As shown; Figure 2 In the image, a and b are SEM images of the TC4 movable support before and after polishing, respectively.
[0019] Figure 1 Images of the TC4 movable bracket before and after polishing in Example 1; Figure 2 In Example 1, image a is a SEM image of the TC4 movable bracket before polishing, and image b is a SEM image of the TC4 movable bracket after polishing. Figure 3 This is a comparison image of the TC4 movable bracket before and after polishing in Example 2; Figure 4 Image a is a SEM image of the TC4 movable bracket before polishing in Example 2, and image b is a SEM image of the TC4 movable bracket after polishing in Example 2. Figure 5 This is a comparison image of the TC4 movable bracket before and after polishing in Example 3; Figure 6 In Example 3, image a is a SEM image of the TC4 movable bracket before polishing, and image b is a SEM image of the TC4 movable bracket after polishing. Detailed Implementation
[0020] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0021] Example 1 A method for preparing a plasma polishing slurry is as follows: (1) First, pour 10L into the plasma polishing equipment and heat it to 80℃; (2) Add 240g of ammonium chloride and 135g of ammonium fluoride (acidic part) to the plasma polishing equipment in sequence, and then add 375g of sodium hydroxide (alkaline part). Stir until fully dissolved to obtain plasma polishing solution.
[0022] The above-mentioned plasma polishing solution was used to polish the TC4 movable support. The specific method is as follows: (1) Place the TC4 movable bracket to be polished on the hanger and put it into the polishing tank inside the polishing machine; (2) Add the plasma polishing solution prepared above into the polishing tank, heat it to 90°C, and polish it for 600s at a voltage of 380V. (3) Take out the TC4 movable bracket, rinse it thoroughly with tap water, dry it and then remove it to complete the polishing process of the TC4 movable bracket.
[0023] Macroscopic images of the TC4 movable support before and after polishing are shown below. Figure 1 As shown; Figure 2 The images show SEM images of the TC4 movable support before and after polishing. This demonstrates that the plasma polishing solution prepared in Example 1 has a very good polishing effect on the TC4 movable support.
[0024] Example 2 A method for preparing a plasma polishing slurry is as follows: (1) First, pour 10L into the plasma polishing equipment and heat it to 85℃; (2) Add 50g of ammonium chloride and 10g of hydroxylamine hydrochloride (acidic part) to the plasma polishing equipment in sequence, and then add 50g of sodium hydroxide (alkaline part). Stir until fully dissolved to obtain plasma polishing solution.
[0025] The above-mentioned plasma polishing solution was used to polish the TC4 movable support. The specific method is as follows: (1) Place the TC4 movable bracket to be polished on the hanger and put it into the polishing tank inside the polishing machine; (2) Add the plasma polishing solution prepared above into the polishing tank, heat it to 85°C, and polish it for 900s at a voltage of 380V. (3) Take out the TC4 movable bracket, rinse it thoroughly with tap water, dry it and then remove it to complete the polishing process of the TC4 movable bracket.
[0026] Macroscopic images of the TC4 movable support before and after polishing are shown below. Figure 3 As shown; Figure 4 The images show SEM images of the TC4 movable support before and after polishing. This demonstrates that the plasma polishing solution prepared in Example 1 has a very good polishing effect on the TC4 movable support.
[0027] Example 3 A method for preparing a plasma polishing slurry is as follows: (1) First, pour 10L into the plasma polishing equipment and heat it to 82℃; (2) Add 300g of ammonium fluoride and 200g of ammonium hydrogen fluoride (acidic part) to the plasma polishing equipment in sequence, and then add 400g of potassium hydroxide (alkaline part). Stir until fully dissolved to obtain plasma polishing solution.
[0028] The above-mentioned plasma polishing solution was used to polish the TC4 movable support. The specific method is as follows: (1) Place the TC4 movable bracket to be polished on the hanger and put it into the polishing tank inside the polishing machine; (2) Add the plasma polishing solution prepared above into the polishing tank, heat it to 95°C, and polish it for 600s at a voltage of 380V. (3) Take out the TC4 movable bracket, rinse it thoroughly with tap water, dry it and then remove it to complete the polishing process of the TC4 movable bracket.
[0029] Macroscopic images of the TC4 movable support before and after polishing are shown below. Figure 5 As shown; Figure 6 The images show SEM images of the TC4 movable support before and after polishing. This demonstrates that the plasma polishing solution prepared in Example 1 has a very good polishing effect on the TC4 movable support.
[0030] In summary, this invention discloses a plasma polishing solution, which mainly includes an acidic part (ammonium salt and halide) and an alkaline part, and can be used for polishing TC4 movable supports. It has the following advantages: (1) The plasma polishing solution disclosed in this invention does not contain any corrosive or dangerous acid components, which ensures the safety of polishing TC4 movable supports; (2) When the plasma polishing solution disclosed in this invention is used to polish TC4 movable supports, the polishing time of a single support can be reduced by more than 80% compared with the traditional manual polishing process; (3) The water used in the plasma polishing solution disclosed in this invention has a wide range of sources, and tap water, distilled water or purified water can meet the requirements.
[0031] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit it. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of the present invention without departing from the spirit and scope of the present invention, and all such modifications or substitutions should be covered within the scope of the claims of the present invention.
Claims
1. A plasma polishing fluid, characterized by, The plasma polishing solution comprises an acidic part and an alkaline part; The acidic part is ammonium salt and halide, the ammonium salt is any one or several different kinds, and the halide is any one or several different kinds; The alkaline part is any one or several alkaline compounds.
2. The plasma fluid of claim 1, wherein, The ammonium salt is a compound containing NH4 + The halide is a compound containing a halogen ion.
3. The plasma fluid of claim 1, wherein, The alkaline compound refers to a compound that is alkaline after being dissolved in water alone.
4. The plasma polishing fluid according to any one of claims 1 to 3, characterized in that The plasma polishing solution comprises 0.5-3 parts of ammonium salt, 0.1-2 parts of halide, 0.5-4 parts of alkaline compound, and 100 parts of water.
5. The plasma fluid of claim 1, wherein, The plasma polishing solution comprises 2.4 parts of ammonium salt, 1.35 parts of halide, 3.75 parts of alkaline compound, and 100 parts of water.
6. The plasma fluid of claim 5, wherein, The plasma polishing solution comprises 0.5 parts of ammonium salt, 0.1 parts of halide, 0.5 parts of alkaline compound, and 100 parts of water.
7. The plasma fluid of claim 4, wherein, The water is any one of distilled water, pure water, tap water, or deionized water.
8. The method of claim 1 to 7, characterized in that, The configuration method is specifically as follows: Water is added to a container and heated to 80-85℃, and then the acidic part and the alkaline part are added in sequence, and stirred to fully dissolve.
9. The use of the plasma polishing solution of claims 1-7 in polishing TC4 movable supports.
10. The method of claim 1-7 for polishing TC4 active by means of plasma electrolytic polishing fluid, characterized in that, The method is specifically: placing the plasma polishing solution of claims 1-7 in a polishing tank, heating to 85-95℃, placing a TC4 movable support pre-placed on a hanger into the polishing tank under a voltage of 320-380V, polishing for 600-900s, and then taking out the TC4 movable support.