Preparation method and application of CdZnTe semiconductor ceramic

Abstract

The invention relates to the technical field of preparation of compound semiconductor materials, and discloses a preparation method and application of CdZnTe semiconductor ceramic, and the preparation method comprises the following steps: weighing CdZnTe powder by using an analytical balance, putting the weighed CdZnTe powder into a graphite mold with the inner diameter of 1.5 cm, putting round carbon paper with the diameter of 1.5 cm on each of the upper side and the lower side of the CdZnTe powder, and uniformly mixing the round carbon paper with the CdZnTe powder; sequentially stacking the carbon paper, the CdZnTe powder and the carbon paper; and the loaded graphite mold is put into a discharge plasma sintering furnace cavity, 160 kg pressure is applied for pre-pressing, the discharge plasma sintering furnace cavity is vacuumized after pre-pressing is completed, and discharge plasma sintering is carried out in a vacuum environment according to a multi-stage temperature-pressure-heat preservation time curve. By adopting the spark plasma sintering technology, a uniform Joule heating effect is generated in the CdZnTe powder through pulse current, so that the material is rapidly and uniformly heated, and the problems of non-uniform temperature distribution and abnormal grain growth caused by slow heat conduction in a traditional sintering method are effectively solved.

Description

Technical Field

[0001] This invention relates to the field of compound semiconductor material preparation technology, specifically to a method for preparing CdZnTe semiconductor ceramics and its application. Background Technology

[0002] X-ray and gamma-ray detectors play an irreplaceable role in key fields such as nuclear medicine diagnosis, public safety inspection, nuclear safety monitoring, industrial non-destructive testing, and space science research. Cadmium zinc telluride (CdZnTe), as a direct conversion compound semiconductor material with excellent performance at room temperature, is considered an ideal candidate material for preparing such radiation detectors due to its high atomic number, suitable bandgap, and good carrier transport characteristics.

[0003] For a long time, the preparation of high-quality CdZnTe bulk materials has mainly relied on single-crystal growth technology. Industrially, the moving heating method, the vertical Bridgman process, and the vertical gradient solidification method, which has gradually developed in recent years, are commonly used. The moving heating method can achieve high-purity crystal growth by precisely controlling the movement of the heating zone, but the extremely slow growth rate leads to low production efficiency. While the vertical Bridgman process increases the growth rate by an order of magnitude and eliminates the need for subsequent annealing, resulting in relatively low dislocation density, it faces inherent challenges such as low single-crystal yield, severe internal defect propagation, and low electron mobility lifetime. The vertical gradient solidification method achieves crystal growth by controlling the temperature gradient of the furnace, which facilitates the integration of various process-aided technologies, but it has stringent requirements for temperature field stability and incurs high equipment investment and maintenance costs. The common problems of the aforementioned single-crystal growth technologies—long growth cycles, high energy consumption, complex processes, high costs, and poor material performance consistency—severely restrict the large-scale commercial application of CdZnTe semiconductor materials in the field of radiation detection. Therefore, there is an urgent need to develop a new method for rapidly preparing high-performance CdZnTe materials to overcome the current technological bottlenecks. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this invention provides a method for preparing CdZnTe semiconductor ceramics and its applications, thus solving the problems mentioned in the background section.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a method for preparing CdZnTe semiconductor ceramics, comprising the following steps: Weigh the CdZnTe powder using an analytical balance. Place the weighed CdZnTe powder into a graphite mold with an inner diameter of 1.5cm. Place a circular carbon paper with a diameter of 1.5cm on each side of the CdZnTe powder. Stack the carbon paper, CdZnTe powder, and carbon paper in that order. The loaded graphite mold is placed into the discharge plasma sintering furnace cavity and a pressure of 160 kg is applied for pre-compression. After the pre-compression is completed, the discharge plasma sintering furnace cavity is evacuated. Discharge plasma sintering is carried out in a vacuum environment according to a multi-stage temperature-pressure-holding time curve. After sintering, the furnace is cooled to obtain CdZnTe semiconductor ceramic. Surface treatment was performed on the CdZnTe semiconductor ceramic obtained by spark plasma sintering to obtain a CdZnTe semiconductor ceramic with a smooth surface.

[0006] The above technical solution achieves rapid and uniform heating by generating uniform Joule heat within the CdZnTe powder using pulsed current. This effectively overcomes the problems of uneven temperature distribution and abnormal grain growth caused by slow heat conduction in traditional sintering methods, and significantly suppresses the loss of volatile elements during sintering. This enables rapid densification sintering of CdZnTe ceramics, resulting in high-density, high-resistivity semiconductor ceramic materials. Compared to traditional single-crystal growth techniques, this method offers advantages such as short process cycle, low sintering temperature, low energy consumption, and high production efficiency. It avoids the slow growth rate of the moving heating method, the low single-crystal yield of the vertical Bridgman method, and the high equipment cost of the vertical gradient solidification method. This provides an efficient and feasible technical solution for the large-scale preparation of CdZnTe semiconductor materials. The prepared CdZnTe semiconductor ceramics exhibit excellent electrical properties and structural density, fully meeting the application requirements of room-temperature X-ray detectors for low dark current, high sensitivity, and stable detection performance. It is suitable for detector fabrication in fields such as nuclear medicine imaging, public safety inspection, and industrial flaw detection.

[0007] Preferably, the CdZnTe powder is a high-purity powder with a stoichiometric ratio of Cd0.9Zn0.1Te, the purity of which is 5N, and the weighing mass is 1.7 to 2.2g.

[0008] By employing the above technical solution and using high-purity 5N powder with a stoichiometric ratio of Cd0.9Zn0.1Te as raw material and controlling the weighing mass within the range of 1.7–2.2 g, precise control of the final ceramic product composition is achieved. This ensures stable doping of the Zn component at a molar ratio of 0.1, effectively avoiding the introduction of impurity energy levels and the increase of charge carrier recombination centers caused by insufficient raw material purity. At the same time, this mass range matches the graphite mold with an inner diameter of 1.5 cm, ensuring that the thickness of the pre-pressed blank is within the ideal forming range of 1.3–1.8 mm, and also ensuring uniform Joule heat distribution and effective pressure transmission during spark plasma sintering. This results in CdZnTe semiconductor ceramics with uniform composition, high density, and stable electrical properties.

[0009] Preferably, the thickness of the circular blank formed after pre-pressing is 1.3 to 1.8 mm, the sintering pressure applied during the spark plasma sintering process is 40 to 70 MPa, the holding time is 5 to 20 min, and the sintering temperature is 850 to 975 °C.

[0010] Through the above technical solution, by controlling the thickness of the pre-pressed circular blank within the range of 1.3–1.8 mm, combined with the application of a sintering pressure of 40–70 MPa during spark plasma sintering, a holding time of 5–20 min, and a sintering temperature of 850–975 °C, the optimal matching and synergistic effect of various process parameters were achieved. The matching of the blank thickness with the inner diameter of the mold ensured that Joule heat penetrated uniformly into the blank during sintering and minimized the temperature gradient. The pressure range of 40–70 MPa provided sufficient driving force to promote particle rearrangement and densification while avoiding grain breakage. The short holding time of 5–20 min effectively suppressed abnormal grain growth while rapidly completing densification. The sintering temperature of 850–975 °C ensured the energy required for atomic diffusion and grain boundary migration and was lower than the volatilization temperature of Te, thus significantly suppressing compositional segregation. Finally, high-performance CdZnTe semiconductor ceramics with a relative density of over 98%, a resistivity on the order of 109 Ω·cm, and a uniform structure were obtained.

[0011] Preferably, the sintering temperature during the spark plasma sintering process is controlled within the range of 850–975°C.

[0012] By controlling the discharge plasma sintering temperature within a reasonable range, a balance between the sintering densification process and the stability of the composition is achieved. This ensures that atomic diffusion and grain boundary migration proceed fully to obtain high-density ceramics, while effectively suppressing the loss of volatile elements and the generation of high-temperature defects, thereby obtaining CdZnTe semiconductor ceramics with uniform structure and stable performance.

[0013] Preferably, the sintering pressure applied during the spark plasma sintering process is controlled within the range of 40 to 70 MPa.

[0014] By controlling the discharge plasma sintering pressure within an appropriate range, a balance between the densification driving force and the integrity of the material structure is achieved. This provides sufficient pressure to promote particle rearrangement and plastic deformation to obtain high density, while avoiding grain breakage and microcracks caused by excessive pressure, thereby obtaining CdZnTe semiconductor ceramics with dense structure and stable performance.

[0015] Preferably, the holding time during the discharge plasma sintering process is controlled within the range of 5 to 20 minutes.

[0016] By controlling the heat preservation time within a reasonable range, a balance between rapid densification and grain growth inhibition is achieved. This ensures that grain rearrangement and grain boundary fusion are completed in a short time to obtain high density, while effectively avoiding abnormal grain growth, component volatilization and performance degradation caused by long heat preservation. As a result, CdZnTe semiconductor ceramics with uniform structure and excellent performance are obtained.

[0017] Preferably, the heating program in the spark plasma sintering process is set as follows: heating from room temperature to 600°C at a heating rate of 150°C / min, and then heating from 600°C to the sintering temperature at a heating rate of 100°C / min.

[0018] The above technical solution, by adopting a segmented temperature-changing heating program, achieves an organic combination of rapid heating efficiency and precise temperature control. It ensures rapid passage through the low-temperature stage to shorten the overall process cycle, while slowing down the heating rate in the high-temperature stage to ensure uniform temperature field distribution and avoid temperature overshoot, thereby obtaining CdZnTe semiconductor ceramics with uniform structure and stable performance.

[0019] Preferably, the upper limit of power during the discharge plasma sintering process is constant at 75%, and the vacuum degree inside the discharge plasma sintering furnace is 10⁻² Pa.

[0020] By using the above technical solution, the stability and purity of the sintering process are guaranteed by constantly controlling the upper limit of power and combining it with a high vacuum sintering environment. This ensures the uniformity of Joule heating and the stability of the temperature field, while effectively avoiding oxidation reactions and the loss of volatile elements, thereby obtaining CdZnTe semiconductor ceramics with accurate composition, dense structure and stable performance.

[0021] Preferably, the surface treatment includes the following operations: Use 2000-grit sandpaper to polish both sides of the CdZnTe semiconductor ceramic for 10 minutes each to remove carbon that has penetrated into the ceramic surface; Use 7000-grit sandpaper to polish both sides of the polished CdZnTe semiconductor ceramic for 10 minutes each to remove scratches for the first time. The CdZnTe semiconductor ceramic was polished for 15 minutes on each side after grinding using a polishing solution prepared with MgO powder to remove scratches for the second time. The polished CdZnTe semiconductor ceramic was cleaned with deionized water and then dried with nitrogen gas to complete the surface treatment.

[0022] Through the above technical solution, by adopting a graded and progressive surface treatment process, the effective removal of carbon layers infiltrated during the sintering process and the gradual optimization of surface quality are achieved. This ensures the complete removal of residual carbon impurities in the graphite mold, and obtains a smooth surface with low roughness and high flatness through multiple grinding and polishing processes. At the same time, the combination of deionized water cleaning and inert gas drying avoids secondary surface contamination and water vapor adsorption. Finally, CdZnTe semiconductor ceramics with excellent surface condition and suitable for detector fabrication are obtained.

[0023] A CdZnTe semiconductor ceramic is used in the fabrication of a room-temperature radiation X-ray detector.

[0024] Through the above technical solution, the CdZnTe semiconductor ceramic prepared by the discharge plasma sintering method described in this invention has been directly applied in room temperature radiation X-ray detectors. Due to its high density, high resistivity, low defect density and good carrier transport characteristics, the ceramic material fully meets the basic requirements of X-ray detectors for low dark current, high sensitivity and stable detection performance, so that the detector can work at room temperature and exhibit excellent X-ray response capability.

[0025] This invention provides a method for preparing CdZnTe semiconductor ceramics and its applications. It offers the following advantages: 1. This invention employs spark plasma sintering technology, which generates a uniform Joule heating effect inside CdZnTe powder through pulsed current, achieving rapid and uniform heating of the material. This effectively overcomes the problems of uneven temperature distribution and abnormal grain growth caused by slow heat conduction in traditional sintering methods. At the same time, it suppresses the loss of volatile elements during sintering, significantly improving the densification rate and density of CdZnTe ceramics, and obtaining high-quality semiconductor ceramic materials.

[0026] 2. The preparation method of this invention has a short process cycle, low sintering temperature, and short holding time, which greatly shortens the production cycle, reduces energy consumption costs, and avoids the problems of slow growth rate, low production efficiency, and demanding equipment requirements of traditional single crystal growth methods. It provides an efficient and feasible technical solution for the large-scale production of CdZnTe semiconductor materials.

[0027] 3. The CdZnTe semiconductor ceramic prepared by this invention has excellent electrical properties and structural density, making it suitable for the fabrication of room temperature radiation X-ray detectors. The fabricated detectors exhibit low dark current, high sensitivity, and good detection limits, which can meet the requirements for X-ray detection materials in fields such as nuclear medicine imaging, security monitoring, and industrial flaw detection. Attached Figure Description

[0028] Figure 1This is a schematic diagram of the scanning electron microscope (SEM) of the cross-section of the Cd0.9Zn0.1Te sample in Examples 1, 2, and 3 of the present invention; Figure 2 This is a schematic diagram of the electrical property (IV) test results of the Cd0.9Zn0.1Te sample in Example 1 of the present invention; Figure 3 This is a schematic diagram of the test results of the X-ray room temperature radiation detector prepared from the Cd0.9Zn0.1Te sample in Example 1 of the present invention. Detailed Implementation

[0029] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0030] Please see the appendix Figure 1 - Appendix Figure 3 This invention provides a method for preparing CdZnTe semiconductor ceramics and its application.

[0031] Example 1 This embodiment provides a method for preparing CdZnTe semiconductor ceramics by spark plasma sintering, including the following steps: Step (1): Use an analytical balance to accurately weigh 2.1g of high-purity Cd0.9Zn0.1Te powder, put the powder into a graphite mold with an inner diameter of 1.5cm, place a circular carbon paper with a diameter of 1.5cm on each side of the powder, stack the carbon paper, powder, and carbon paper in that order, and then place the graphite mold in a spark plasma sintering furnace and pre-press it under a pressure of 160kg to form a cylindrical blank with a thickness of 1.5mm.

[0032] Step (2): Place the loaded graphite mold into the spark plasma sintering furnace chamber, evacuate to a vacuum level of 10⁻² Pa, and start the sintering program in a vacuum environment. First, rapidly raise the furnace temperature from room temperature to 600℃ at a heating rate of 150℃ / min, and then continue to raise the temperature to a sintering temperature of 925℃ at a heating rate of 100℃ / min. Throughout the heating process, apply a constant sintering pressure of 70MPa to the green body, and set the upper limit of sintering power to 75%. When the temperature reaches 925℃, maintain this temperature and pressure conditions for 15 minutes of holding sintering. After the holding period, disconnect the power supply, and allow the sample to cool to room temperature with the furnace, obtaining a highly dense CdZnTe semiconductor ceramic.

[0033] Step (3): Surface treatment of the sintered CdZnTe semiconductor ceramic. First, polish both sides of the ceramic with 2000-grit sandpaper for 10 minutes each to completely remove the carbon layer that penetrated into the surface during sintering. Then, polish both sides of the ceramic with 7000-grit sandpaper for 10 minutes each for the first scratch removal. Next, polish both sides of the ceramic with a polishing solution prepared with MgO powder for 15 minutes each for the second scratch removal to obtain a smooth surface. Finally, rinse the polished ceramic with deionized water and dry it with high-purity nitrogen gas to complete the surface treatment and obtain CdZnTe semiconductor ceramic that can be used for detector fabrication.

[0034] The performance of the CdZnTe semiconductor ceramic prepared in this embodiment was characterized. Figure 1 (a) is a scanning electron microscope image of the cross section of the sample. It can be seen that the ceramic structure is dense, the grain boundaries are clear, and there are no obvious pores or defects. The relative density is measured to be 99.7%. Figure 2 The resistivity of the sample, calculated through fitting, is 1.82 × 10⁹ Ω·cm, indicating excellent electrical insulation properties. The sample was then fabricated into a detector device and subjected to X-ray room temperature radiation detection tests, with the following results: Figure 3 As shown, the detector exhibits low dark current levels at different dose rates. Under an 80 kV tube voltage, its sensitivity reaches 44.9 μC·Gyair-1·cm-2, and its detection limit is as low as 148.87 μGyair·s-1, demonstrating excellent X-ray detection performance.

[0035] Example 2 This embodiment provides a method for preparing CdZnTe semiconductor ceramics by spark plasma sintering, which differs from Embodiment 1 in that the sintering temperature is different.

[0036] Step (1): Use an analytical balance to accurately weigh 2.1g of high-purity Cd0.9Zn0.1Te powder, put the powder into a graphite mold with an inner diameter of 1.5cm, place a circular carbon paper with a diameter of 1.5cm on each side of the powder, stack the carbon paper, powder, and carbon paper in that order, and then place the graphite mold in a spark plasma sintering furnace and pre-press it under a pressure of 160kg to form a cylindrical blank with a thickness of 1.5mm.

[0037] Step (2): Place the loaded graphite mold into the spark plasma sintering furnace chamber, evacuate to a vacuum level of 10⁻² Pa, and start the sintering program in a vacuum environment. First, rapidly raise the furnace temperature from room temperature to 600℃ at a heating rate of 150℃ / min, and then continue to raise the temperature to 950℃ at a heating rate of 100℃ / min. Throughout the heating process, apply a constant sintering pressure of 70MPa to the green body, and set the upper limit of sintering power to 75%. When the temperature reaches 950℃, maintain this temperature and pressure conditions for 15 minutes of holding sintering. After the holding period, disconnect the power supply, and allow the sample to cool to room temperature with the furnace, obtaining highly dense CdZnTe semiconductor ceramics.

[0038] Step (3): Surface treatment of the sintered CdZnTe semiconductor ceramic. First, polish both sides of the ceramic with 2000-grit sandpaper for 10 minutes each to completely remove the carbon layer that penetrated into the surface during sintering. Then, polish both sides of the ceramic with 7000-grit sandpaper for 10 minutes each for the first scratch removal. Next, polish both sides of the ceramic with a polishing solution prepared with MgO powder for 15 minutes each for the second scratch removal to obtain a smooth surface. Finally, rinse the polished ceramic with deionized water and dry it with high-purity nitrogen gas to complete the surface treatment and obtain CdZnTe semiconductor ceramic that can be used for detector fabrication.

[0039] The performance of the CdZnTe semiconductor ceramic prepared in this embodiment was characterized. Figure 1 (b) is a scanning electron microscope image of the cross section of the sample, showing that the ceramic structure is relatively dense, with a relative density of 98.9%. After increasing the sintering temperature to 950℃, the density of the ceramic remained good, the grain growth was relatively uniform, and no obvious abnormal grain growth was observed, indicating that the sintering process of the present invention has a wide process window.

[0040] Example 3 This embodiment provides a method for preparing CdZnTe semiconductor ceramics by discharge plasma sintering, which differs from Example 1 in that the powder weighing mass is different.

[0041] Step (1): Use an analytical balance to accurately weigh 1.9g of high-purity Cd0.9Zn0.1Te powder, put the powder into a graphite mold with an inner diameter of 1.5cm, place a circular carbon paper with a diameter of 1.5cm on each side of the powder, stack the carbon paper, powder, and carbon paper in that order, and then place the graphite mold in a spark plasma sintering furnace and pre-press it under a pressure of 160kg to form a cylindrical blank with a thickness of 1.3mm.

[0042] Step (2): Place the loaded graphite mold into the spark plasma sintering furnace chamber, evacuate to a vacuum level of 10⁻² Pa, and start the sintering program in a vacuum environment. First, rapidly raise the furnace temperature from room temperature to 600℃ at a heating rate of 150℃ / min, and then continue to raise the temperature to a sintering temperature of 925℃ at a heating rate of 100℃ / min. Throughout the heating process, apply a constant sintering pressure of 70MPa to the green body, and set the upper limit of sintering power to 75%. When the temperature reaches 925℃, maintain this temperature and pressure conditions for 15 minutes of holding sintering. After the holding period, disconnect the power supply, and allow the sample to cool to room temperature with the furnace, obtaining a highly dense CdZnTe semiconductor ceramic.

[0043] Step (3): Surface treatment of the sintered CdZnTe semiconductor ceramic. First, polish both sides of the ceramic with 2000-grit sandpaper for 10 minutes each to completely remove the carbon layer that penetrated into the surface during sintering. Then, polish both sides of the ceramic with 7000-grit sandpaper for 10 minutes each for the first scratch removal. Next, polish both sides of the ceramic with a polishing solution prepared with MgO powder for 15 minutes each for the second scratch removal to obtain a smooth surface. Finally, rinse the polished ceramic with deionized water and dry it with high-purity nitrogen gas to complete the surface treatment and obtain CdZnTe semiconductor ceramic that can be used for detector fabrication.

[0044] The performance of the CdZnTe semiconductor ceramic prepared in this embodiment was characterized. Figure 1 (c) is a scanning electron microscope image of the cross-section of the sample, showing that the ceramic structure is dense and the grains are evenly distributed, with a relative density of 99.5%. After reducing the powder mass to 1.9g, the thickness of the resulting green body becomes thinner, but high-density ceramics can still be obtained under the same sintering process conditions, indicating that the preparation method of the present invention has good adaptability to products of different thicknesses.

[0045] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A method for preparing CdZnTe semiconductor ceramic, characterized in that, Includes the following steps: Weigh the CdZnTe powder using an analytical balance. Place the weighed CdZnTe powder into a graphite mold with an inner diameter of 1.5cm. Place a circular carbon paper with a diameter of 1.5cm on each side of the CdZnTe powder. Stack the carbon paper, CdZnTe powder, and carbon paper in that order. The loaded graphite mold is placed into the discharge plasma sintering furnace cavity and a pressure of 160 kg is applied for pre-compression. After the pre-compression is completed, the discharge plasma sintering furnace cavity is evacuated. Discharge plasma sintering is carried out in a vacuum environment according to a multi-stage temperature-pressure-holding time curve. After sintering, the furnace is cooled to obtain CdZnTe semiconductor ceramic. Surface treatment was performed on the CdZnTe semiconductor ceramic obtained by spark plasma sintering to obtain a CdZnTe semiconductor ceramic with a smooth surface.

2. The method for preparing CdZnTe semiconductor ceramic according to claim 1, characterized in that, The CdZnTe powder is a high-purity powder with a stoichiometric ratio of Cd0.9Zn0.1Te, and the purity of the high-purity powder is 5N, with a weighing weight of 1.7 to 2.2g.

3. The method for preparing CdZnTe semiconductor ceramic according to claim 1, characterized in that, The thickness of the circular blank formed after pre-pressing is 1.3 to 1.8 mm. The sintering pressure applied during the spark plasma sintering process is 40 to 70 MPa, the holding time is 5 to 20 min, and the sintering temperature is 850 to 975 °C.

4. The method for preparing CdZnTe semiconductor ceramic according to claim 1, characterized in that, The sintering temperature during the discharge plasma sintering process is controlled within the range of 850–975°C.

5. The method for preparing CdZnTe semiconductor ceramic according to claim 1, characterized in that, The sintering pressure applied during the discharge plasma sintering process is controlled within the range of 40 to 70 MPa.

6. The method for preparing CdZnTe semiconductor ceramic according to claim 1, characterized in that, The holding time during the discharge plasma sintering process is controlled within the range of 5 to 20 minutes.

7. The method for preparing CdZnTe semiconductor ceramic according to claim 1, characterized in that, The heating program in the spark plasma sintering process is set as follows: the temperature is increased from room temperature to 600°C at a heating rate of 150°C / min, and then increased from 600°C to the sintering temperature at a heating rate of 100°C / min.

8. The method for preparing CdZnTe semiconductor ceramic according to claim 1, characterized in that, The power limit during the discharge plasma sintering process is kept constant at 75%, and the vacuum degree inside the discharge plasma sintering furnace is 10⁻² Pa.

9. The method for preparing a CdZnTe semiconductor ceramic according to claim 1, characterized in that, The surface treatment includes the following operations: Use 2000-grit sandpaper to polish both sides of the CdZnTe semiconductor ceramic for 10 minutes each to remove carbon that has penetrated into the ceramic surface; Use 7000-grit sandpaper to polish both sides of the polished CdZnTe semiconductor ceramic for 10 minutes each to remove scratches for the first time. The CdZnTe semiconductor ceramic was polished for 15 minutes on each side after grinding using a polishing solution prepared with MgO powder to remove scratches for the second time. The polished CdZnTe semiconductor ceramic was cleaned with deionized water and then dried with nitrogen gas to complete the surface treatment.

10. A CdZnTe semiconductor ceramic, prepared by the method according to any one of claims 1 to 9, characterized in that, This CdZnTe semiconductor ceramic is used in the fabrication of room temperature radiation X-ray detectors.

Images