Copolymer containing cyclic ether structure, preparation method of copolymer, positive photoresist and application of positive photoresist

Abstract

The invention relates to a copolymer containing a cyclic ether structure, a preparation method of the copolymer, a positive photoresist and application of the positive photoresist. The photoresist comprises the following components: film-forming resin, a photo-acid generator, an alkaline quenching agent, a solvent and an auxiliary agent, wherein the film-forming resin is a monomer copolymer containing a cyclic ether structure and is mainly prepared by polymerizing a monomer A, a monomer B and a monomer C; the monomer A contains a lactone group; the monomer B contains a protecting group; the monomer C contains a polar group and a rigid cyclic ether structure, so that the mechanical property and polarity of the photoresist can be improved. The monomer copolymer containing the cyclic ether structure has the advantages of being good in film forming property and easy to develop, can be used for preparing ArF positive photoresist, and has the advantages of being high in image resolution, good in morphology, small in standing wave effect and the like.

Description

Technical Field

[0001] This application relates to the field of photoresist technology, and more specifically, to a copolymer containing a cyclic ether structure, its preparation method, a positive photoresist, and its application. Background Technology

[0002] Photoresist is the core material of photolithography and a key raw material for chip manufacturing. In the manufacturing process, photoresist is first spin-coated onto a substrate. When light passes through a mask and irradiates the substrate, the solubility of the photoresist changes. After the soluble portion is washed away with a developer, the photoresist forms a corresponding pattern, which is then transferred to the substrate through etching. Depending on the subsequent application, the substrate can be a printed circuit board, wafer, or integrated circuit board, among other semiconductor devices.

[0003] Photoresists can be classified into positive and negative photoresists based on their reaction mechanism. Negative photoresists are those where the photoresist hardens in the exposed areas, becoming insoluble in the developer; during development, the unexposed areas are dissolved to form the pattern. Positive photoresists, on the other hand, exhibit a change in solubility in the exposed areas, dissolving during development to form the pattern.

[0004] ArF series photoresists have been used in chemical amplification, which exhibit very high lithographic resolution and good morphology. However, they have high requirements for film-forming resins, requiring sensitive deprotection groups and certain polar groups to improve deprotection ability. The interfacial bonding ability between the photoresist and the wafer must be strong. However, current applications of this type of photoresist still have problems such as pattern defects and pattern instability in lithographic pattern applications. Summary of the Invention

[0005] To obtain photoresists with fewer pattern defects and stable patterns, this application provides a copolymer containing a cyclic ether structure, its preparation method, a positive photoresist, and its application.

[0006] In a first aspect, this application provides a copolymer containing a cyclic ether structure, which adopts the following technical solution: a copolymer containing a cyclic ether structure, which is obtained by free radical polymerization of monomer A, monomer B and monomer C; The monomer A contains a lactone group; The B monomer contains a protecting group; The C monomer contains polar groups and rigid cyclic ether groups.

[0007] Preferably, the monomer molar percentage in the copolymer is: 45-50 mol% of monomer A, 30-40 mol% of monomer B, and 10-20 mol% of monomer C.

[0008] Monomers with cyclic ether structures possess steric hindrance, which can stabilize the structural sequence of the film-forming resin and enhance its deprotection ability. Simultaneously, they can provide polar groups to the resin, strengthening the interfacial bonding between the photoresist and the wafer. Based on these advantages, photoresists prepared from copolymers of monomers containing cyclic ether structures exhibit superior performance.

[0009] Specifically, a positive photoresist is prepared by using a polymerization reaction to obtain a cyclic ether copolymer. During use, the cyclic ether structure in the copolymer significantly improves the polarity of the photoresist, resulting in a tighter bond between the photoresist and the silicon wafer, greatly reducing defects during the coating process. Simultaneously, the cyclic structure enhances the resin's stability and mechanical properties, allowing it to maintain its physical properties during exposure and development, reducing defects such as T-top, footing, and collapse, thus significantly improving the overall performance of the photoresist.

[0010] In some embodiments, monomer A is one or more of 1,4-butyrolactone methacrylate, 5-methacryloyloxy-2,6-norbornane lactone, and 2-carboxy-2-cyano-4-norbornane lactone-5-methacrylate.

[0011] In some embodiments, monomer B is one or more of 2-methyl-2-adamantyl acrylate, 2-ethyl-2-adamantyl acrylate, 2-methyl-2-adamantyl methacrylate, 2-ethyl-2-adamantyl methacrylate, and 2-isopropyl-2-adamantyl methacrylate.

[0012] By adopting the above technical solution, the molecular structure of monomer B is optimized, the overall deprotection capability of the photoresist is improved, the activation energy of the resin reaction during exposure is reduced, and the sensitivity, resolution and other properties of the photoresist are improved.

[0013] In some embodiments, the structural formula of the monomer C is as follows: One or more of the following, wherein R is one of hydrogen atom, methyl, ethyl, propyl, and isopropyl.

[0014] By adopting the above technical solutions, the types of C monomers are further optimized and adjusted, the molecular structure composition and the types of substituent groups are modified, and the chemical and thermal stability of the copolymer system is improved. During the polymerization process, the cyclic ether groups interact with the lactone groups, making it easier for the deprotected monomers to react with the photoacid generator in the copolymer sequence. Simultaneously, the self-leveling and adhesion of the photoresist are optimized, reducing morphological defects in the photolithographic pattern.

[0015] More preferably, when monomer A is 1,4-butyrolactone methacrylate, monomer B is 2-methyl-2-adamantyl methacrylate, and monomer C is preferably cyclotrimethylolpropane methyl acetal acrylate, the prepared photoresist can obtain better photolithographic patterns.

[0016] This may be because, in the copolymer molecular chain obtained by polymerization, the similar ester group formation forces in the structure of 1,4-butyrolactone methacrylate and cyclotrimethylolpropane methyl acetal acrylate lead to the formation of molecular confinement thresholds in the structure of ether ring and lactone, which is beneficial to restricting acid diffusion within the exposure area and optimizing the reaction of deprotected monomers and photoacid generators. Furthermore, the cyclotrimethylolpropane methyl acetal acrylate has a structure of three rationally distributed oxygen atoms within the molecule, which can also improve adhesion, thereby synergistically optimizing the photolithography pattern.

[0017] Secondly, this application provides a method for preparing a copolymer containing a cyclic ether structure, comprising the following steps: S1: First, weigh a portion of the solvent into a flask, and at the same time weigh the monomer and initiator and dissolve them in a portion of the solvent to prepare a monomer solution for later use. Place the flask at 70-80℃ and keep it magnetically stirred. Then, add the monomer solution dropwise into the flask at a uniform rate. After all the monomer solution has been added, react for 2-8 hours and then terminate the reaction to obtain the intermediate product. S2: After the intermediate product was cooled to room temperature, it was added dropwise to a methanol solution to obtain a white precipitate. After filtration and drying, a copolymer powder was obtained.

[0018] Understandably, this application selects the monomer of the first aspect for polymerization, which possesses the excellent properties of the copolymer of the first aspect.

[0019] By adopting the above technical solution, a polymerization reaction is carried out under suitable reaction temperature and reaction time conditions, while inert gas protection is used to obtain a cyclic ether copolymer resin with uniform molecular structure.

[0020] Thirdly, this application provides an ArF positive photoresist, comprising the following raw materials in parts by weight: 60-120 parts of film-forming resin, 6-10 parts of photoacid generator, 0.2-0.5 parts of alkaline quencher, 0.01-0.02 parts of additives, and 400-2000 parts of solvent; wherein the film-forming resin is the copolymer described in the first aspect. In some embodiments, the photoacid-generating agent is (4-acetylphenyl)(4-iodophenyl)phenyl-1,1,1-trifluoromethanesulfonium thionate, N-hydroxyphthalimide methanesulfonate, N-hydroxysuccinimide methanesulfonate, N-hydroxysuccinimide, p-toluenesulfonate, maleic amylopectin imide methanesulfonate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium camphor sulfonate, diphenyliodonium perfluoro-1-butanesulfonate, diphenyliodonium perfluorooctane sulfonate, 4-methylfluorophenyliodonium trifluoromethanesulfonate, bis(4-tert-butylphenyl)iodonium trifluoromethanesulfonate, bis(4-tert-butylphenyl)iodonium perfluoro-1-butane ... The following are some of the following: (1) Butylphenyl)iodonium camphor sulfonate, (2) bis(4-tert-butylphenyl)iodonium perfluorooctane sulfonate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium camphor sulfonate, triphenylsulfonium perfluoro-1-butyl sulfonate, triphenylsulfonium perfluorooctane sulfonate, p-tolyldiphenylsulfonium trifluoromethanesulfonate, p-tolyldiphenylsulfonium perfluorooctane sulfonate, p-tolyldiphenylsulfonium perfluoro-1-butane sulfonate, 2,4,6-trimethylphenyldiphenylsulfonium trifluoromethane sulfonate, 4-tert-butylphenyldiphenylsulfonium trifluoromethane sulfonate, and 4-hydroxy-1-naphthyldimethylsulfonium trifluoromethane sulfonate.

[0021] In some embodiments, the alkaline quencher is one or more selected from triethanolamine, trioctylamine, tetrabutylammonium acetate, tributylamine, triisopropanolamine, and N-methyldicyclohexylamine.

[0022] In some embodiments, the solvent is one or more selected from propylene glycol methyl ether, propylene glycol methyl ether acetate, ethyl lactate, cyclohexanone, ethyl acetate, butanone, 3-ethoxypropionic acid, 2-heptanone, and ethylene glycol monomethyl ether acetate. The additive is Shin-Etsu KP-341 leveling agent.

[0023] Fourthly, this application provides an application of ArF positive photoresist, characterized in that the photoresist of the third aspect is coated with an anti-reflective coating, then coated, exposed, baked, and developed to obtain a photolithographic pattern.

[0024] In summary, this application includes at least one of the following beneficial technical effects: 1. Because this application uses multiple monomers such as A, B, and C to polymerize monomer copolymers containing cyclic ether structures, the ether-containing cyclic structure has certain steric hindrance, which can optimize the arrangement of each monomer in the copolymer, making the copolymer structure more stable and improving the production stability of the resin. When applied to chemically amplified photoresists, it improves the leveling properties of the photoresist system, greatly reduces the generation of pattern defects such as T-top morphology, and makes the photolithographic pattern more stable.

[0025] 2. This study screens and optimizes the molecular structures of monomers A, B, and C to further improve the overall performance of the resin. The cyclic ether structure can significantly improve the polarity of the photoresist, resulting in a tighter bond between the photoresist and the silicon wafer, greatly reducing defects during the coating process. Simultaneously, the ring structure enhances the resin's stability and mechanical properties, allowing it to maintain its physical properties during exposure and development, reducing defects such as T-top, footing, and collapse, thus achieving better photolithographic patterns. Attached Figure Description

[0026] Figure 1 This is a CD-SEM image of the photoresist in Embodiment 1 of this application.

[0027] Figure 2 This is a CD-SEM image of the photoresist in Embodiment 2 of this application.

[0028] Figure 3 This is a CD-SEM image of the photoresist in Embodiment 3 of this application.

[0029] Figure 4 This is a CD-SEM image of the photoresist in Example 4 of this application.

[0030] Figure 5 This is a CD-SEM image of the photoresist in Comparative Example 1 of this application.

[0031] Figure 6 This is a CD-SEM image of the photoresist in Comparative Example 2 of this application. Detailed Implementation

[0032] The present invention will be further described in detail below with reference to specific embodiments. The raw materials used in this application are all commercially available brands or obtainable through conventional processes. The embodiments of the present invention are not limited thereto; for process parameters not specifically specified, conventional techniques can be referred to.

[0033] Example 1 The copolymer containing a cyclic ether structure in this embodiment is obtained by polymerization of monomer A, monomer B, and monomer C, wherein monomer A is 1,4-butyrolactone methacrylate, monomer B is 2-methyl-2-adamantyl methacrylate, and monomer C is cyclotrimethylolpropane methyl acetal acrylate.

[0034] The preparation method of the copolymer containing a cyclic ether structure in this embodiment: S1: 90g of propylene glycol methyl ether acetate was added to a 500ml four-necked flask equipped with a stirrer, condenser, and thermometer. 9.91g of cyclotrimethylolpropane methyl acetal acrylate, 21.79g of 2-methyl-2-adamantyl methacrylate, 18.36g of 1,4-butyrolactone methacrylate, and 4g of dimethyl azobisisobutyronitrile were dissolved in 56.87g of propylene glycol methyl ether acetate to prepare a monomer solution. The flask was placed at 79℃ and magnetically stirred. The monomer solution was then added dropwise to the flask at a uniform rate. After all the monomer solution was added, the reaction was stopped after 4 hours to obtain the intermediate product. A reflux condenser was used throughout the reaction.

[0035] S2: After the intermediate product is cooled to room temperature, it is added dropwise to 800 ml of methanol to obtain a white precipitate, which is then filtered and dried in a vacuum oven at 55°C.

[0036] The ArF-positive photoresist of this embodiment is prepared by mixing the following raw materials in the indicated weights: 100 parts of film-forming resin (i.e., the above copolymer), 10 parts of photoacid-generating agent, 0.2 parts of alkaline quencher, 0.01 parts of additives, and 400 parts of solvent.

[0037] The photo-induced acid-producing agent is N-hydroxysuccinimide methanesulfonate, the alkaline quencher is trioctylamine, the solvent is propylene glycol methyl ether acetate, and the auxiliary agent is KP-341.

[0038] The application of ArF-positive photoresist in this embodiment includes the following steps: the ArF-positive photoresist is applied to the wafer surface by spin coating, then dried at 110°C for 60 seconds, exposed using an ArF light source, then baked at 110°C for another 60 seconds, then developed using tetramethyl sodium hydroxide developer for 60 seconds, and finally cleaned to obtain the photolithographic pattern.

[0039] Example 2 The copolymer containing a cyclic ether structure in the embodiment is obtained by polymerization of monomer A, monomer B and monomer C, wherein monomer A is 1,4-butyrolactone methacrylate, monomer B is 2-methyl-2-adamantyl methacrylate and monomer C is cyclotrimethylolpropane methyl acetal acrylate.

[0040] The preparation method of the copolymer containing a cyclic ether structure in this embodiment: S1: 90g of propylene glycol methyl ether acetate was added to a 500ml four-necked flask equipped with a stirrer, condenser, and thermometer. 9.91g of cyclotrimethylolpropane methyl acetal acrylate, 19.19g of 2-methyl-2-adamantyl methacrylate, 20.25g of 1,4-butyrolactone methacrylate, and 4g of dimethyl azobisisobutyronitrile were dissolved in 56.87g of propylene glycol methyl ether acetate to prepare a monomer solution. The flask was placed at 79℃ with magnetic stirring, and then the monomer solution was added dropwise to the flask at a uniform rate. After all the monomer solution was added, the reaction was stopped after 4 hours to obtain the intermediate product. A reflux condenser was used throughout the reaction.

[0041] S2: After the intermediate product is cooled to room temperature, it is added dropwise to 800 ml of methanol to obtain a white precipitate, which is then filtered and dried in a vacuum oven at 55°C.

[0042] The ArF-positive photoresist of this embodiment is prepared by mixing the following raw materials in the indicated weights: 100 parts of film-forming resin (i.e., the above copolymer), 10 parts of photoacid-generating agent, 0.2 parts of alkaline quencher, 0.01 parts of additives, and 400 parts of solvent.

[0043] The photo-induced acid-producing agent is N-hydroxysuccinimide methanesulfonate, the alkaline quencher is trioctylamine, the solvent is propylene glycol methyl ether acetate, and the auxiliary agent is KP-341.

[0044] The application of ArF-positive photoresist in this embodiment is the same as in Embodiment 1.

[0045] Example 3 The copolymer containing a cyclic ether structure in the embodiment is obtained by polymerization of monomer A, monomer B and monomer C, wherein monomer A is 1,4-butyrolactone methacrylate, monomer B is 2-methyl-2-adamantyl methacrylate and monomer C is cyclotrimethylolpropane methyl acetal acrylate.

[0046] The preparation method of the copolymer containing a cyclic ether structure in this embodiment: S1: 90g of propylene glycol methyl ether acetate was added to a 500ml four-necked flask equipped with a stirrer, condenser, and thermometer. 7.69g of cyclotrimethylolpropane methyl acetal acrylate, 21.79g of 2-methyl-2-adamantyl methacrylate, 18.9g of 1,4-butyrolactone methacrylate, and 4g of dimethyl azobisisobutyronitrile were dissolved in 56.87g of propylene glycol methyl ether acetate to prepare a monomer solution. The flask was placed at 79℃ and magnetically stirred. The monomer solution was then added dropwise to the flask at a uniform rate. After all the monomer solution was added, the reaction was stopped for 4 hours to obtain the intermediate product. A reflux condenser was used throughout the reaction.

[0047] S2: After the intermediate product is cooled to room temperature, it is added dropwise to 800 ml of methanol to obtain a white precipitate, which is then filtered and dried in a vacuum oven at 55°C.

[0048] The ArF-positive photoresist of this embodiment is prepared by mixing the following raw materials in the indicated weights: 100 parts of film-forming resin (i.e., the above copolymer), 10 parts of photoacid-generating agent, 0.2 parts of alkaline quencher, 0.01 parts of additives, and 400 parts of solvent.

[0049] The photo-induced acid-producing agent is N-hydroxysuccinimide methanesulfonate, the alkaline quencher is trioctylamine, the solvent is propylene glycol methyl ether acetate, and the auxiliary agent is KP-341.

[0050] The application of ArF-positive photoresist in this embodiment is the same as in Embodiment 1.

[0051] Example 4 The copolymer containing a cyclic ether structure in the embodiment is obtained by polymerization of monomer A, monomer B and monomer C, wherein monomer A is 1,4-butyrolactone methacrylate, monomer B is 2-methyl-2-adamantyl methacrylate and monomer C is cyclotrimethylolpropane methyl acetal acrylate.

[0052] The preparation method of the copolymer containing a cyclic ether structure in this embodiment: S1: 90g of propylene glycol methyl ether acetate was added to a 500ml four-necked flask equipped with a stirrer, condenser, and thermometer. 5.46g of cyclotrimethylolpropane methyl acetal acrylate, 20.83g of 2-methyl-2-adamantyl methacrylate, 20.25g of 1,4-butyrolactone methacrylate, and 4g of dimethyl azobisisobutyronitrile were dissolved in 56.87g of propylene glycol methyl ether acetate to prepare a monomer solution. The flask was placed at 79℃ with magnetic stirring, and then the monomer solution was added dropwise to the flask at a uniform rate. After all the monomer solution was added, the reaction was stopped after 4 hours to obtain the intermediate product. A reflux condenser was used throughout the reaction.

[0053] S2: After the intermediate product is cooled to room temperature, it is added dropwise to 800 ml of methanol to obtain a white precipitate, which is then filtered and dried in a vacuum oven at 55°C.

[0054] The ArF-positive photoresist of this embodiment is prepared by mixing the following raw materials in the indicated weights: 40 parts of film-forming resin (i.e., the above copolymer), 10 parts of photoacid-generating agent, 0.2 parts of alkaline quencher, 0.01 parts of additives, and 400 parts of solvent.

[0055] The photo-induced acid-producing agent is N-hydroxysuccinimide methanesulfonate, the alkaline quencher is trioctylamine, the solvent is propylene glycol methyl ether acetate, and the auxiliary agent is KP-341.

[0056] The application of ArF-positive photoresist in this embodiment is the same as in Embodiment 1.

[0057] Comparative Example 1 The ArF-positive photoresist of Comparative Example 1 was prepared by mixing the following raw materials by weight: 40 parts film-forming resin, 8 parts photoacid generator, 0.15 parts alkaline quencher, 0.01 parts additives, and 400 parts solvent.

[0058] The film-forming resin is the copolymer of Example 2. The photoacid generator is N-hydroxysuccinimide methanesulfonate, the alkaline quencher is trioctylamine, the solvent is propylene glycol methyl ether acetate, and the additive is KP-341.

[0059] The application of ArF-positive photoresist in this comparative embodiment is the same as in Embodiment 2.

[0060] Comparative Example 2 The ArF-positive photoresist of Comparative Example 2 was prepared by mixing the following raw materials by weight: 40 parts film-forming resin, 6 parts photoacid generator, 0.1 parts alkaline quencher, 0.01 parts additives, and 400 parts solvent.

[0061] The film-forming resin is the copolymer of Example 2, the photoacid generator is N-hydroxysuccinimide methanesulfonate, the alkaline quencher is trioctylamine, the solvent is propylene glycol methyl ether acetate, and the additive is KP-341.

[0062] The application of ArF-positive photoresist in this comparative embodiment is the same as in Embodiment 2.

[0063] Table 1: Polymer properties of the examples and comparative examples Table 2: Photoresist properties of the examples and comparative examples Combining Table 1, Table 2 and Figure 1-4 Analysis of Examples 1-4 shows that the white edges of the lines are not obvious in the top view of the line pattern, indicating good contrast. Furthermore, the SEM cross-sectional images show that as the C monomer content is adjusted, the edges of the pattern gradually become smoother, and the standing wave effect is significantly improved, further enhancing the resolution of the photoresist. Copolymers with high C monomer content have higher polarity and molecular chain flexibility, allowing them to bond tightly to the silicon wafer surface during film formation and providing sufficient free volume for acid diffusion, reducing defect generation and producing high-resolution images at lower exposure energies. (See Tables 1 and 2.) Figure 1-6 Comparing Examples 1-2 and Example 2, it can be seen that the photoresist of this application can achieve better results at a specific weight ratio.

[0064] This specific embodiment is merely an explanation of this application and is not intended to limit it. After reading this specification, those skilled in the art can make modifications to this embodiment without contributing any inventive step, but such modifications are protected by patent law as long as they fall within the scope of the claims of this application.

Claims

1. A copolymer containing a cyclic ether structure, characterized in that, It is prepared by free radical polymerization of monomers A, B, and C; The monomer A contains a lactone group; The B monomer contains a protecting group; The C monomer contains polar groups and rigid cyclic ether groups.

2. The copolymer containing a cyclic ether structure according to claim 1, characterized in that, The monomer A is one or more of 1,4-butyrolactone methacrylate, 5-methacryloyloxy-2,6-norbornane lactone, and 2-carboxy-2-cyano-4-norbornane lactone-5-methacrylate.

3. The copolymer containing a cyclic ether structure according to claim 1, characterized in that, The monomer B is one or more of 2-methyl-2-adamantyl acrylate, 2-ethyl-2-adamantyl acrylate, 2-methyl-2-adamantyl methacrylate, 2-ethyl-2-adamantyl methacrylate, and 2-isopropyl-2-adamantyl methacrylate.

4. The copolymer containing a cyclic ether structure according to claim 1, characterized in that, The structural formula of the monomer C is as follows: One or more of the following, wherein R is one of hydrogen atom, methyl, ethyl, propyl, and isopropyl.

5. The method for preparing the copolymer containing a cyclic ether structure according to any one of claims 1-4, characterized in that, Includes the following steps: S1: First, weigh a portion of the solvent into a flask, and at the same time weigh the monomer and initiator and dissolve them in a portion of the solvent to prepare a monomer solution for later use. Place the flask at 70-80℃ and keep it magnetically stirred. Then, add the monomer solution dropwise into the flask at a uniform rate. After all the monomer solution has been added, react for 2-8 hours and then terminate the reaction to obtain the intermediate product. S2: After the intermediate product was cooled to room temperature, it was added dropwise to a methanol solution to obtain a white precipitate. After filtration and drying, a copolymer powder was obtained.

6. An ArF positive photoresist, characterized in that, The raw materials comprise the following parts by weight: 60-120 parts of film-forming resin, 6-10 parts of photoacid generator, 0.2-0.5 parts of alkaline quencher, 0.01-0.02 parts of additives, and 400-2000 parts of solvent; wherein the film-forming resin is a copolymer as described in any one of claims 1-4.

7. The ArF positive photoresist according to claim 6, characterized in that, The photoacid-generating agent is (4-acetylphenyl)(4-iodophenyl)phenyl-1,1,1-trifluoromethanesulfonium thionate, N-hydroxyphthalimide methanesulfonate, N-hydroxysuccinimide methanesulfonate, N-hydroxysuccinimide, p-toluenesulfonate, maleic amylopectin imide methanesulfonate, diphenyliodonium trifluoromethanesulfonate, diphenyliodonium camphor sulfonate, diphenyliodonium perfluoro-1-butanesulfonate, diphenyliodonium perfluorooctane sulfonate, 4-methylfluorophenyliodonium trifluoromethanesulfonate, bis(4-tert-butylphenyl)iodonium trifluoromethanesulfonate, bis(4-tert-butylphenyl)iodonium perfluoro-1-butane ... The following are some of the following: iodonium camphor sulfonate, bis(4-tert-butylphenyl)iodonium perfluorooctane sulfonate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium trifluoromethanesulfonate, triphenylsulfonium camphor sulfonate, triphenylsulfonium perfluoro-1-butyl sulfonate, triphenylsulfonium perfluorooctane sulfonate, p-tolyl diphenylsulfonium trifluoromethanesulfonate, p-tolyl diphenylsulfonium perfluorooctane sulfonate, p-tolyl diphenylsulfonium perfluoro-1-butane sulfonate, 2,4,6-trimethylphenyl diphenylsulfonium trifluoromethane sulfonate, 4-tert-butylphenyl diphenylsulfonium trifluoromethane sulfonate, and 4-hydroxy-1-naphthyl dimethylsulfonium trifluoromethane sulfonate.

8. The ArF positive photoresist according to claim 6, characterized in that, The alkaline quencher is one or more of triethanolamine, trioctylamine, tetrabutylammonium acetate, tributylamine, triisopropanolamine, and N-methyldicyclohexylamine.

9. The ArF positive photoresist according to claim 6, characterized in that, The solvent is one or more of propylene glycol methyl ether, propylene glycol methyl ether acetate, ethyl lactate, cyclohexanone, ethyl acetate, butanone, 3-ethoxypropionic acid, 2-heptanone, and ethylene glycol monomethyl ether acetate.

10. An application of an ArF positive photoresist, characterized in that, The photoresist as described in any one of claims 6-9 is coated with an anti-reflective coating, then coated, exposed, baked, and developed to obtain a photolithographic pattern.

Images