Laser-induced positioning epitaxy system

Abstract

The invention discloses a laser-induced positioning epitaxy system, which comprises a shell, a bearing frame, a mask and a laser generator, and is characterized in that the shell is provided with a turnover cavity and a reaction cavity; and the laser generator emits laser to the mask through the perspective window and enables the laser to penetrate through the mask to irradiate the substrate. According to the invention, through accurate control of the mask and the laser, epitaxial growth can be carried out only in a specific region of the substrate without influencing other regions. The traditional selective area epitaxy technology is limited by thermal budget, and the epitaxial growth of a specific area can be realized under the condition that other parts of the substrate are not influenced by utilizing the local heating characteristic of laser. The laser heating has high locality and high controllability, and the epitaxial growth region and layer number can be accurately controlled, so that a complex device structure is prepared. By realizing epitaxial growth of a multi-layer structure on the substrate, the performance of the device can be improved, for example, high-speed and efficient information transmission and processing can be realized.

Description

Technical Field

[0001] This invention relates to the field of chemical vapor deposition, and more specifically to a laser-induced positioning epitaxial system. Background Technology

[0002] With the rapid development of information technology, silicon-based optoelectronic integration technology, as an emerging integration technology, has received increasing attention. This technology achieves high-speed and efficient information transmission and processing by integrating optoelectronic and microelectronic devices on silicon substrates. However, silicon-based optoelectronic integration technology still faces many challenges, especially in the heterogeneous integration of optoelectronic materials, where there are significant technical bottlenecks.

[0003] In related technologies, selected area epitaxy (SIE) plays a crucial role in the research and fabrication of silicon-based optoelectronic fusion devices. However, it suffers from limitations such as reliance on mask layers to define the epitaxial window region and thermal budget constraints. Therefore, developing a targeted epitaxy technique that is independent of mask layers and not limited by thermal budgets has become an important research direction for the development of silicon-based optoelectronic fusion technology. Summary of the Invention

[0004] The present invention aims to at least partially solve one of the technical problems in the related art.

[0005] Therefore, embodiments of the present invention propose a laser-induced positioning epitaxy system.

[0006] The laser-induced positioning epitaxial growth system of this invention includes a housing, a support frame, a mask, and a laser generator. The housing has a turnover cavity and a reaction cavity, with a first valve between the turnover cavity and the reaction cavity. The housing also has a viewing window and a loading / unloading hatch. The support frame carries a substrate for transferring the substrate between the turnover cavity and the reaction cavity. The mask is disposed inside the reaction cavity. The laser generator is disposed outside the housing. The laser generator emits a laser beam through the viewing window onto the mask, causing the laser to pass through the mask and irradiate the substrate, thereby enabling epitaxial growth in the laser-irradiated area on the substrate.

[0007] In some embodiments, the laser-induced positioning epitaxial system of the present invention further includes a mounting frame disposed within the reaction chamber, the mounting frame having a support, the mask being disposed on the support, and the mounting frame having a placement area for placing the support frame.

[0008] In some embodiments, the laser-induced positioning epitaxial system of the present invention further includes a temperature control component, which is disposed on the mounting frame and defines the placement area between the temperature control component and the mask. The temperature control component is used to adjust the temperature of the placement area.

[0009] In some embodiments, the temperature control assembly includes a heat-conducting plate and a cooling coil. The heat-conducting plate is arranged at a distance from the mask, and a heating wire is provided inside the heat-conducting plate. The cooling coil is located on the side of the heat-conducting plate opposite to the mask.

[0010] In some embodiments, the laser-induced positioning epitaxial system of the present invention further includes an infrared thermometer and a camera. The infrared thermometer is used to detect the temperature of the substrate surface through the viewing window, and the camera is used to observe the epitaxial state of the substrate surface through the viewing window.

[0011] In some embodiments, the laser-induced positioning extension system of the present invention further includes a three-axis adjustment device, which is disposed outside the housing. The laser generator, the infrared thermometer, and the camera are all disposed on the three-axis adjustment device to adjust the positions of the laser generator, the infrared thermometer, and the camera.

[0012] In some embodiments, the housing has a first air inlet, a first air outlet, and a second air outlet communicating with the reaction chamber. The first air inlet is used to deliver process gas for epitaxial growth of the substrate into the reaction chamber. The first air outlet is connected to a first mechanical pump, and the second air outlet is connected to a cryogenic pump. A second valve is provided between the second air outlet and the cryogenic pump.

[0013] In some embodiments, the housing further has a second air inlet, a third air outlet, and a fourth air outlet communicating with the turnover cavity. The second air inlet is used to deliver nitrogen into the turnover cavity. The third air outlet is connected to a second mechanical pump, and the fourth air outlet is connected to a molecular pump. A third valve is provided between the fourth air outlet and the molecular pump.

[0014] In some embodiments, the laser-induced positioning epitaxial system of the present invention further includes a conveying rod, which is slidably disposed within the housing, with a first end disposed inside the housing and a second end disposed outside the housing, and the support frame connected to the first end of the conveying rod.

[0015] In some embodiments, both the turnover cavity and the reaction cavity are equipped with vacuum gauges.

[0016] The laser-induced localization epitaxial system of this invention, through precise control of the mask and laser, enables epitaxial growth only in a specific region of the substrate without affecting other areas. Traditional selected-area epitaxy techniques are limited by thermal budgets, while this invention utilizes the local heating characteristics of lasers to achieve epitaxial growth in a specific region without affecting other parts of the substrate. Laser heating offers high locality and controllability, allowing precise control over the region and number of layers in the epitaxial growth, thereby fabricating complex device structures. By achieving multilayer epitaxial growth on a substrate, device performance can be improved, such as enabling high-speed, efficient information transmission and processing. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the structure of the laser-induced positioning epitaxial system according to an embodiment of the present invention.

[0018] Figure 2 This is a cross-sectional view of the laser-induced positioning epitaxial system according to an embodiment of the present invention.

[0019] Figure 3 This is a cross-sectional view of the laser-induced positioning epitaxial system according to an embodiment of the present invention.

[0020] Figure 4 This is a cross-sectional view of the laser-induced positioning epitaxial system according to an embodiment of the present invention.

[0021] Figure 5 This is a schematic diagram showing the arrangement of the temperature control component, substrate, support frame, and mask according to an embodiment of the present invention.

[0022] Figure label: 100. Laser-induced positioning epitaxial system; 200. Substrate; 1. Housing; 101. Turnover cavity; 102. Reaction cavity; 103. Perspective window; 104. Loading / unloading hatch; 105. First air inlet; 106. First air extraction port; 107. Second air extraction port; 108. Second air inlet; 109. Fourth air extraction port; 2. First valve; 3. Support frame; 4. Mask; 5. Laser generator; 6. Mounting frame; 7. Support; 8. Placement area; 9. Temperature control component; 901. Cooling coil; 902. Heat-conducting sheet; 10. Infrared thermometer; 11. Camera; 12. Three-axis adjustment device; 13. First mechanical pump; 14. Cryogenic pump; 15. Second valve; 16. Second mechanical pump; 17. Molecular pump; 18. Third valve; 19. Conveying rod. Detailed Implementation

[0023] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0024] With the rapid development of information technology, silicon-based optoelectronic integration technology, as an emerging integration technology, has received increasing attention. This technology achieves high-speed and efficient information transmission and processing by integrating optoelectronic and microelectronic devices on a silicon substrate. However, silicon-based optoelectronic integration technology still faces many challenges, especially in the heterogeneous integration of optoelectronic materials, where there are significant technical bottlenecks.

[0025] In related technologies, selected area epitaxy (SIE) plays a crucial role in the research and fabrication of silicon-based optoelectronic fusion devices. However, it suffers from limitations such as reliance on four mask layers to define the epitaxial window region and thermal budget constraints. Therefore, developing a localized epitaxy technique that is independent of four mask layers and not limited by thermal budget constraints has become an important research direction for the development of silicon-based optoelectronic fusion technology.

[0026] like Figures 1 to 5 As shown, the laser-induced positioning epitaxial growth system 100 of this embodiment includes a housing 1, a support frame 3, a mask 4, and a laser generator 5. The housing 1 has a transfer cavity 101 and a reaction cavity 102, with a first valve 2 disposed between the transfer cavity 101 and the reaction cavity 102. The housing 1 also has a viewing window 103 and a loading / unloading hatch 104; the support frame 3 is used to carry a substrate 200 for transferring the substrate 200 between the transfer cavity 101 and the reaction cavity 102. The mask 4 is disposed inside the reaction cavity 102; the laser generator 5 is disposed outside the housing 1, and the laser generator 5 emits a laser beam through the viewing window 103 to the mask 4, causing the laser beam to pass through the mask 4 and irradiate the substrate 200, thereby enabling epitaxial growth in the laser-irradiated area on the substrate 200. For example, the first valve is a gate valve.

[0027] The epitaxial process of the laser-induced positioning epitaxial system 100 in this embodiment of the invention is as follows: (1) For example Figure 3 As shown, before epitaxial growth begins on substrate 200, it is necessary to ensure that the pressure in the turnover cavity 101 and reaction cavity 102 reaches 10. -5 Pa moves the support frame 3 from the reaction chamber 102 to the turnover chamber 101, closes the first valve 2 between the turnover chamber 101 and the reaction chamber 102, and restores the pressure of the turnover chamber 101 to normal pressure. (2) Open the pick-up and drop-off door 104, place the substrate 200 on the support frame 3 in the turnover cavity 101, close the pick-up and drop-off door 104, and reduce the pressure in the turnover cavity 101 to 10. -5 Below Pa; (3) such as Figure 4 As shown, the first valve 2 is opened to transport the carrier frame 2 of the substrate 200 into the reaction chamber 102 in preparation for the epitaxial growth process; (4) such as Figure 2As shown, the laser generator 5 emits a laser beam through the viewing window 103 onto the mask 4. After passing through the mask 4, the laser beam irradiates a specific location on the substrate 200. A gas source then reacts chemically with the surface of the substrate 200 at a specific temperature, achieving epitaxial growth. Due to the high locality of the laser, only the area irradiated by the laser experiences a temperature increase, thus allowing epitaxial growth to occur in that area. (5) After the epitaxial growth process is completed, the pressure in the reaction chamber 102 is reduced to 10. -5 When the pressure is below Pa, open the first valve 2 and transfer the sample from the reaction chamber 102 to the turnover chamber 101 through the support frame 2. Close the first valve 2 between the two chambers to restore the pressure of the turnover chamber 101 to normal pressure. Open the pick-and-place door 104 and take out the epitaxially grown substrate 200 sample.

[0028] The laser-induced localization epitaxial system 100 of this invention, through precise control of the mask 4 and the laser, enables epitaxial growth only in a specific region of the substrate 200 without affecting other regions. Traditional selected area epitaxy techniques are limited by thermal budgets, while this invention utilizes the local heating characteristics of lasers to achieve epitaxial growth in a specific region without affecting other parts of the substrate 200. Laser heating has high locality and high controllability, allowing precise control over the region and number of layers of epitaxial growth, thereby fabricating complex device structures. By achieving multilayer epitaxial growth on the substrate 200, device performance can be improved, such as enabling high-speed, efficient information transmission and processing.

[0029] In some embodiments, the laser-induced positioning epitaxial system 100 of the present invention further includes a mounting frame 6, which is disposed in the reaction chamber 102. The mounting frame 6 is provided with a support 7, and the mask 4 is disposed on the support 7. The mounting frame 6 has a placement area 8 for placing the carrier frame 3.

[0030] For example, such as Figures 2 to 4 As shown, the mounting frame 6 is connected to a mechanical device via a metal disc. The mechanical device controls the horizontal and vertical translation and horizontal rotation of the metal disc, enabling the metal disc to drive the mounting frame 6 to perform these functions. Specifically, the mounting frame 6 includes a metal guide rail, within which are three supports 7, arranged at 120° angles to each other. The supports 7 are made of quartz and are used to hold the mask 4 required for positioning the epitaxial layer.

[0031] Mounting bracket 6 is located within reaction chamber 102, providing a fixed position for mask 4 and ensuring its stability during laser irradiation, which is crucial for precise control of the epitaxial region. Support 7 on mounting bracket 6 is used to place mask 4, ensuring an appropriate distance between mask 4 and substrate 200 so that the laser can accurately pass through mask 4 and irradiate substrate 200. Mounting bracket 6 has a placement area 8 for placing carrier 3, allowing for convenient placement and removal of substrate 200 when needed, improving production efficiency.

[0032] Therefore, the mounting bracket 6 and the support 7 enhance the stability of the mask 4, making the epitaxial growth process more reliable and reducing epitaxial growth defects caused by equipment instability. By precisely controlling the position of the mask 4, the accuracy of laser irradiation can be improved, thereby achieving more precise selective epitaxy. The design of the mounting bracket 6 makes the maintenance and replacement of the mask 4 and the support bracket 3 more convenient, helping to maintain the long-term stable operation of the equipment.

[0033] In some embodiments, the laser-induced positioning epitaxial system 100 of the present invention further includes a temperature control component 9, which is disposed on the mounting frame 6 and defines a placement area 8 between the temperature control component 9 and the mask 4. The temperature control component 9 is used to adjust the temperature of the placement area 8.

[0034] The temperature control component 9 is mounted on the mounting bracket 6 and is used to regulate the temperature of the placement area 8. This is crucial for the epitaxial growth process, as different epitaxial materials may require different temperature conditions to achieve optimal growth quality. The placement area 8 between the temperature control component 9 and the mask 4 can be temperature-controlled independently of other areas within the reaction chamber 102. This allows for precise temperature regulation of a specific area without affecting the overall environment of the reaction chamber 102.

[0035] Therefore, by precisely controlling the temperature of the placement area 8, the conditions for epitaxial growth can be optimized, the quality of the epitaxial layer can be improved, and defects can be reduced. The addition of the temperature control component 9 enables the equipment to adapt to a wider range of epitaxial growth needs, including epitaxial growth of different materials and structures, thereby improving the applicability of the equipment.

[0036] In some embodiments, the temperature control component 9 includes a heat-conducting plate 902 and a cooling coil 901. The heat-conducting plate 902 is arranged at a distance from the mask 4. A heating wire is provided inside the heat-conducting plate 902. The cooling coil 901 is located on the side of the heat-conducting plate 902 away from the mask 4.

[0037] A heating wire is installed inside the heat-conducting plate 902, which can be heated by energizing the wire. A cooling coil 901 is located on the side of the heat-conducting plate 902 facing away from the mask 4, and typically carries a coolant or other cooling medium, such as liquid nitrogen, to cool the heat-conducting plate 902 when needed. Specifically, the cooling coil 901 can be spiral-shaped to maximize its contact area with the heat-conducting plate.

[0038] The heating wire of the heat-conducting plate 902 provides localized heating, while the cooling coil 901 provides localized cooling. This arrangement enables rapid heating and cooling of the epitaxial growth region, thereby precisely controlling the growth temperature. Through the different layouts of the heat-conducting plate 902 and the cooling coil 901, a specific temperature gradient can be formed in the placement area 8, which is crucial for certain epitaxial growth processes requiring specific temperature distributions. The heating wire and cooling coil 901 can quickly respond to temperature control demands, allowing the equipment to rapidly adapt to temperature changes during epitaxial growth.

[0039] In some embodiments, the laser-induced positioning epitaxial system 100 of the present invention further includes an infrared thermometer 10 and a camera 11. The infrared thermometer 10 is used to detect the temperature of the substrate 200 surface through the viewing window 103, and the camera 11 is used to observe the epitaxial state of the substrate 200 surface through the viewing window 103.

[0040] The infrared thermometer 10 performs non-contact temperature detection on the surface of the substrate 200 through the viewing window 103, enabling real-time monitoring of temperature changes on the substrate 200 surface during epitaxial growth. The temperature data provided by the infrared thermometer 10 can be fed back to the temperature control component 9 for real-time temperature control, ensuring temperature stability during the epitaxial growth process. By monitoring and adjusting the temperature in real time, the growth quality of the epitaxial layer can be optimized, reducing defects and impurities.

[0041] Camera 11 observes the epitaxial state of the substrate 200 surface through the viewing window 103, enabling real-time monitoring of the epitaxial growth process. The use of camera 11 makes the epitaxial growth process visible, helping operators observe changes in the epitaxial layer and adjust process parameters promptly. Through the real-time images from camera 11, defects in the epitaxial layer, such as cracks and voids, can be detected, allowing for timely corrective measures.

[0042] In some embodiments, the laser-induced positioning extension system 100 of the present invention further includes a three-axis adjustment device 12. The three-axis adjustment device 12 is disposed outside the housing 1. The laser generator 5, the infrared thermometer 10 and the camera 11 are all disposed on the three-axis adjustment device 12 to adjust the positions of the laser generator 5, the infrared thermometer 10 and the camera 11.

[0043] The three-axis adjustment device 12 allows for precise positioning of the laser generator 5, infrared thermometer 10, and camera 11 in three vertical directions (typically the X, Y, and Z axes). This device enables precise alignment of the laser generator 5, infrared thermometer 10, and camera 11 with the substrate 200 surface, improving the accuracy of epitaxial growth and the uniformity of the grown layer. Operators can adjust the three-axis adjustment device 12 as needed to accommodate variations in substrate size and shape, as well as different epitaxial growth process requirements.

[0044] In some embodiments, the housing 1 has a first air inlet 105, a first air outlet 106, and a second air outlet 107 communicating with the reaction chamber 102. The first air inlet 105 is used to deliver process gas for epitaxial growth of the substrate 200 into the reaction chamber 102. The first air outlet 106 is connected to a first mechanical pump 13, and the second air outlet 107 is connected to a cryogenic pump 14. A second valve 15 is provided between the second air outlet 107 and the cryogenic pump 14.

[0045] The first gas inlet 105 is used to supply process gases for epitaxial growth of the substrate 200 into the reaction chamber 102, such as silane, disilane, germanane, digermanane, etc., and also includes doping gases such as phosphine, diborane, arsine, etc. Of course, these process gases can be diluted with hydrogen, helium, nitrogen, etc., which do not participate in the epitaxial reaction, or hydrogen, helium, nitrogen, etc., which do not participate in the epitaxial reaction can be used as carrier gases to supply certain process liquid source (also known as MO source) vapor with a low vapor pressure into the reaction chamber 102 by means of bubbling or other methods.

[0046] The first exhaust port 106 is connected to a first mechanical pump 13, used to maintain appropriate pressure within the reaction chamber 102 and to discharge waste gas or excess gas generated during the reaction. The second exhaust port 107 is connected to a cryogenic pump 14, used to quickly reduce the pressure within the reaction chamber 102 when needed, typically used when rapid cooling or removal of gas from the reaction chamber 102 is required. A second valve 15 is located between the second exhaust port 107 and the cryogenic pump 14, used to control the opening and closing of the cryogenic pump 14, thereby controlling the pressure and temperature within the reaction chamber 102.

[0047] The placement of the air inlet and outlet allows for precise control of the gas composition and pressure within the reaction chamber 102, which is crucial for the stability of the epitaxial growth process and the quality of the grown layer. Rapidly adjusting the pressure within the reaction chamber 102 optimizes epitaxial growth conditions and improves growth efficiency. The use of the cryogenic pump 14 enhances the equipment's cooling capacity, helping to quickly reduce the temperature within the reaction chamber 102 when needed, thus maintaining the stability of the epitaxial growth process.

[0048] In some embodiments, the housing 1 further has a second air inlet 108, a third air outlet and a fourth air outlet 109 communicating with the turnover cavity 101. The second air inlet 108 is used to deliver nitrogen into the turnover cavity 101. The third air outlet is connected to a second mechanical pump 16. The fourth air outlet 109 is connected to a molecular pump 17. A third valve 18 is provided between the fourth air outlet 109 and the molecular pump 17.

[0049] The second inlet 108 is used to supply nitrogen or other inert gases into the turnover chamber 101 to restore the pressure inside the turnover chamber 101 to atmospheric pressure. The third exhaust port is connected to a second mechanical pump 16 to maintain appropriate pressure within the turnover chamber 101 and to discharge waste or excess gas generated during turnover. The fourth exhaust port 109 is connected to a molecular pump 17 to quickly reduce the pressure inside the turnover chamber 101 when needed, typically used when rapid cooling or purging of gas from the turnover chamber 101 is required. A third valve 18 is located between the fourth exhaust port 109 and the molecular pump 17 to control the opening and closing of the molecular pump 17, thereby controlling the pressure inside the turnover chamber 101. By rapidly adjusting the pressure inside the turnover chamber 101, the turnover process of the substrate 200 can be optimized, improving turnover efficiency. Through the configuration of the inlets and exhaust ports, the equipment can adapt to different turnover requirements, improving its versatility.

[0050] In some embodiments, the laser-induced positioning epitaxial system 100 of the present invention further includes a conveying rod 19, which is slidably disposed in the housing 1. The first end of the conveying rod 19 is disposed inside the housing 1, and the second end of the conveying rod 19 is disposed outside the housing 1. The support frame 3 is connected to the first end of the conveying rod 19.

[0051] The conveyor rod 19 is used to transfer the carrier 3 (and the substrate 200 thereon) between the turnover cavity 101 and the reaction cavity 102, thereby automating the processing of the substrate 200. The conveyor rod 19 is slidably inserted through the housing 1, which makes the transfer process of the substrate 200 smoother and reduces physical damage to the substrate 200.

[0052] In some embodiments, vacuum gauges (not shown in the figure) are provided in both the turnover cavity 101 and the reaction cavity 102.

[0053] A vacuum gauge is used to monitor the pressure in the turnover chamber 101 and the reaction chamber 102 in real time, ensuring that the epitaxial growth process is carried out under predetermined pressure conditions. The data provided by the vacuum gauge can be fed back to the control system to automatically adjust the gas flow rate at the inlet and outlet, maintaining stable pressure in the reaction chamber 102 and the turnover chamber 101. By precisely controlling the pressure, consistency in each epitaxial growth process can be ensured, thereby improving device performance and reliability.

[0054] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this invention and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0055] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0056] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise explicitly limited. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0057] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "over," and "on top" of the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0058] In this invention, the terms "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to a specific feature, structure, material, or characteristic described in connection with that embodiment or example, which is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0059] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A laser-induced positioning epitaxial system, characterized in that, include: The housing (1) has a turnover cavity (101) and a reaction cavity (102), and a first valve (2) is provided between the turnover cavity (101) and the reaction cavity (102). The housing (1) also has a viewing window (103) and a loading and unloading hatch (104). A support frame (3) is used to support a substrate (200) for transferring the substrate (200) between the turnover cavity (101) and the reaction cavity (102). A mask (4) is disposed inside the reaction chamber (102); A laser generator (5) is disposed outside the housing (1). The laser generator (5) emits a laser through the perspective window (103) to the mask (4) and causes the laser to pass through the mask (4) and irradiate the substrate (200) so that the laser irradiation area on the substrate (200) can be epitaxially grown.

2. The laser-induced positioning epitaxial system according to claim 1, characterized in that, It also includes a mounting frame (6) disposed in the reaction chamber (102), a support (7) is provided on the mounting frame (6), the mask (4) is disposed on the support (7), and the mounting frame (6) has a placement area (8) for placing the support frame (3).

3. The laser-induced positioning epitaxial system according to claim 2, characterized in that, It also includes a temperature control component (9), which is disposed on the mounting bracket (6). The temperature control component (9) and the mask (4) define the placement area (8). The temperature control component (9) is used to adjust the temperature of the placement area (8).

4. The laser-induced positioning epitaxial system according to claim 3, characterized in that, The temperature control component (9) includes a heat-conducting plate (902) and a cooling coil (901). The heat-conducting plate (902) is arranged at intervals from the mask (4). A heating wire is provided inside the heat-conducting plate (902). The cooling coil (901) is located on the side of the heat-conducting plate (902) away from the mask (4).

5. The laser-induced positioning epitaxial system according to claim 1, characterized in that, It also includes an infrared thermometer (10) and a camera (11), the infrared thermometer (10) being used to detect the temperature of the substrate (200) surface through the viewing window (103), and the camera (11) being used to observe the epitaxial state of the substrate (200) surface through the viewing window (103).

6. The laser-induced positioning epitaxial system according to claim 5, characterized in that, It also includes a three-axis adjustment device (12), which is located outside the housing (1). The laser generator (5), the infrared thermometer (10) and the camera (11) are all located on the three-axis adjustment device (12) to adjust the position of the laser generator (5), the infrared thermometer (10) and the camera (11).

7. The laser-induced positioning epitaxial system according to claim 1, characterized in that, The housing (1) has a first air inlet (105), a first air outlet (106), and a second air outlet (107) communicating with the reaction chamber (102). The first air inlet (105) is used to deliver process gas for epitaxial growth of the substrate (200) into the reaction chamber (102). The first air outlet (106) is connected to a first mechanical pump (13). The second air outlet (107) is connected to a cryogenic pump (14). A second valve (15) is provided between the second air outlet (107) and the cryogenic pump (14).

8. The laser-induced positioning epitaxial system according to claim 1, characterized in that, The housing (1) also has a second air inlet (108), a third air outlet and a fourth air outlet (109) communicating with the turnover cavity (101). The second air inlet (108) is used to deliver nitrogen into the turnover cavity (101). The third air outlet is connected to a second mechanical pump (16). The fourth air outlet (109) is connected to a molecular pump (17). A third valve (18) is provided between the fourth air outlet (109) and the molecular pump (17).

9. The laser-induced positioning epitaxial system according to claim 1, characterized in that, It also includes a conveying rod (19), which is slidably inserted through the housing (1). The first end of the conveying rod (19) is located inside the housing (1), and the second end of the conveying rod (19) is located outside the housing (1). The support frame (3) is connected to the first end of the conveying rod (19).

10. The laser-induced positioning epitaxial system according to claim 1, characterized in that, Vacuum gauges are provided in both the turnover cavity (101) and the reaction cavity (102).

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