Silicon carbide crystal growth furnace thermostat with real-time temperature field monitoring function

Abstract

The invention relates to the technical field of silicon carbide crystal growth furnace temperature measurement, and discloses a silicon carbide crystal growth furnace constant temperature device with a real-time temperature field monitoring function, the silicon carbide crystal growth furnace constant temperature device comprises a carrier plate, the upper surface of the carrier plate is fixedly connected with a control box, the upper surface of the carrier plate is fixedly connected with a cylinder, and a crucible is placed in the cylinder. According to the invention, the temperature measuring mechanism accurately controls the gas output amount through the pump body, can drive the temperature measuring terminal to realize temperature monitoring at different depths of the crucible along the flow channel, covers the full-range temperature measuring requirement from the bottom of the crucible to a raw material solid-liquid interface, and meets the temperature measuring scenes at different stages of silicon carbide crystal growth; temperature signals collected by the temperature measuring terminal are transmitted to the control box in real time through a wire, the control box rapidly recognizes local temperature field abnormity through data comparison and immediately adjusts current distribution of the heating coil for targeted regulation and control, temperature field deviation can be corrected in time, crystal growth interruption or quality degradation caused by temperature field abnormity is avoided, and the service life of the crystal is prolonged. And the controllability of the crystal growth process is improved.

Description

Technical Field

[0001] This invention relates to the field of temperature measurement technology for silicon carbide crystal growth furnaces, specifically to a constant temperature device for silicon carbide crystal growth furnaces with real-time temperature field monitoring. Background Technology

[0002] Silicon carbide crystal growth furnaces are core high-end equipment for preparing silicon carbide single crystals. They mainly use processes such as physical vapor transport to transform silicon carbide powder raw materials into high-quality silicon carbide single crystals at high temperatures. Silicon carbide single crystals are key materials for manufacturing high-voltage, high-frequency, and high-temperature semiconductor devices and are widely used in new energy vehicles, photovoltaics, energy storage and other fields.

[0003] Currently, most silicon carbide crystal growth furnaces rely on fixed-point temperature monitoring, which cannot reflect the dynamic changes in the temperature field inside the furnace in real time. When a local temperature deviation occurs, it is difficult to quickly locate the abnormal location, and there is a lack of linkage and closed loop with the temperature control system. Manual intervention is often required for adjustment, which leads to a continuous increase in temperature field deviation and affects the crystal growth quality. To address this, we propose a silicon carbide crystal growth furnace constant temperature device with real-time temperature field monitoring. Summary of the Invention

[0004] (a) Technical problems to be solved To address the shortcomings of existing technologies, this invention provides a constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring. This solves the problem that most existing silicon carbide crystal growth furnaces rely on fixed points for temperature monitoring, which cannot reflect the dynamic changes in the temperature field inside the furnace in real time. When local temperature deviations occur, it is difficult to quickly locate the abnormal location, and there is a lack of linkage and closed loop with the temperature control system, which often requires manual intervention and adjustment, resulting in a continuous increase in temperature field deviation and affecting the crystal growth quality.

[0005] (II) Technical Solution To achieve the above objectives, the present invention provides the following technical solution: a constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring, comprising a carrier plate, a control box fixedly connected to the upper surface of the carrier plate, a cylinder fixedly connected to the upper surface of the carrier plate, a crucible placed inside the cylinder, a sealing cover installed above the cylinder, a temperature measuring mechanism inside the cylinder, the temperature measuring mechanism comprising a mounting frame fixedly connected to the inner bottom wall of the cylinder, two symmetrically arranged stabilizing frames fixedly connected to the inner wall of the crucible, two symmetrically arranged flow channels formed on the lower surface of the crucible, the flow channels being located within the stabilizing frames, vent holes fixedly connected to both sides of the crucible, the vent holes communicating with the flow channels, and a rotating rod rotatably connected to the inner wall of the mounting frame, the rotating rod... One end is fixedly connected to a reel, on which a wire is wound. The end of the wire away from the reel is fixedly connected to a temperature measuring terminal. The temperature measuring terminal is located below the flow channel, and its specifications are consistent with the flow channel. The temperature measuring mechanism precisely controls the gas output through the pump body, which can drive the temperature measuring terminal to monitor the temperature at different depths of the crucible along the flow channel. This covers the full range of temperature measurement needs from the bottom of the crucible to the solid-liquid interface of the raw material, meeting the temperature measurement scenarios at different stages of silicon carbide crystal growth. The temperature signal collected by the temperature measuring terminal is transmitted to the control box in real time via the wire. The control box quickly identifies local temperature field anomalies through data comparison and immediately adjusts the current distribution of the heating coil for targeted regulation. This can correct temperature field deviations in a timely manner, avoid crystal growth interruption or quality degradation caused by temperature field anomalies, and improve the controllability of the crystal growth process.

[0006] Furthermore, a mounting base is fixedly connected to the inner bottom wall of the cylinder, and a pump body is fixedly connected to the inner wall of the mounting base. An exhaust pipe is fixedly connected to the output end of the pump body, and the end of the exhaust pipe away from the pump body is connected to the mounting frame. The position of the temperature measuring terminal can be flexibly controlled by adjusting the gas output of the pump body to meet the needs of temperature monitoring at different depths at different crystal growth stages. The constant temperature mechanism can be conveniently adjusted to the target temperature through the control box to adapt to the growth temperature requirements of silicon carbide crystals of different specifications and types.

[0007] Furthermore, a storage rack is fixedly connected to the inner wall of the mounting frame, and a through hole is opened on the surface of the storage rack. The wire passes through the through hole, and the interior of the storage rack corresponds to the flow channel.

[0008] Furthermore, a torsion spring is fixedly connected to one side of the reel, the torsion spring is sleeved on the rotating rod, and the end of the torsion spring away from the reel is fixedly connected to the inner wall of the mounting frame.

[0009] Furthermore, an air inlet pipe is fixedly connected to the input end of the pump body, and a receiving cover is fixedly connected to the end of the air inlet pipe away from the pump body. The receiving cover is located on one side of the exhaust port.

[0010] Furthermore, a support plate is fixedly connected to the side of the receiving cover away from the crucible, and one end of the support plate is fixedly connected to the inner wall of the cylinder to ensure that the receiving cover is in a stable state.

[0011] Furthermore, the interior of the cylinder is equipped with a positioning mechanism to support the crucible, ensuring that the crucible is in a stable state.

[0012] Furthermore, the positioning mechanism includes a support rod, which is fixedly connected to the inner bottom wall of the cylinder. A bracket is fixedly connected to the upper end of the support rod, and the crucible is placed on the bracket. A limiting block is fixedly connected to the inner bottom wall of the cylinder, and a limiting sleeve is fixedly connected to the lower surface of the crucible. The limiting sleeve is fitted onto the limiting block. Through the precise fitting of the limiting sleeve and the limiting block, and the vertical support of the bracket and the support rod, the crucible is stably positioned horizontally and vertically inside the cylinder. This effectively avoids displacement of the crucible due to thermal expansion or gas flow during heating, ensuring that the heating coil and the outer wall of the crucible always maintain a uniform distance. Heat can be evenly transferred to the inside of the crucible, reducing the problem of uneven local temperature field caused by crucible displacement from the root cause. This provides a stable initial temperature field foundation for silicon carbide crystal growth, ensuring the consistency of the crystal growth environment in different batches and different positions in the same batch, and reducing the crystal defect rate caused by temperature field fluctuations.

[0013] Furthermore, the cylinder is equipped with a constant temperature mechanism for temperature control. The inert gas supply and impurity extraction system can adjust the gas flow rate and vacuum level according to the crystal growth process, adapting to different scenarios from small-batch laboratory research and development to industrial mass production. The high adaptability of the device allows it to meet diverse silicon carbide crystal growth needs without major modifications, significantly improving the device's versatility and practical application value, and reducing equipment investment costs for silicon carbide crystal production companies.

[0014] Furthermore, the constant temperature mechanism includes a support block, which is fixedly connected to the inner wall of the cylinder. A heating coil is fixedly connected to the surface of the support block and is sleeved on the crucible. A suction pipe is fixedly connected to one side of the cylinder, and a pressure gauge is installed on the suction pipe. A gas supply pipe is fixedly connected to one side of the cylinder.

[0015] In summary, the technical effects and advantages of this invention are as follows: 1. In this invention, the temperature measuring mechanism precisely controls the gas output through the pump body, which can drive the temperature measuring terminal along the flow channel to monitor the temperature at different depths of the crucible, covering the full range of temperature measurement needs from the bottom of the crucible to the solid-liquid interface of the raw material. This meets the temperature measurement scenarios at different stages of silicon carbide crystal growth. The temperature signal collected by the temperature measuring terminal is transmitted to the control box in real time via wires. The control box quickly identifies local temperature field anomalies through data comparison and immediately adjusts the current distribution of the heating coil for targeted regulation. This can correct temperature field deviations in a timely manner, avoid crystal growth interruption or quality deterioration caused by temperature field anomalies, and improve the controllability of the crystal growth process.

[0016] 2. In this invention, the position of the temperature measuring terminal can be flexibly controlled by adjusting the gas output of the pump body, meeting the needs of temperature monitoring at different depths at different crystal growth stages. The constant temperature mechanism can be conveniently adjusted through the control box to adapt to the growth temperature requirements of silicon carbide crystals of different specifications and types. The inert gas supply and impurity extraction system can adjust the gas flow rate and vacuum degree according to the crystal growth process, adapting to different scenarios from small-batch research and development in the laboratory to industrial mass production. The high adaptability of the device allows it to meet the diverse needs of silicon carbide crystal growth without major modifications, significantly improving the versatility and practical application value of the device, and reducing equipment investment costs for silicon carbide crystal production enterprises.

[0017] 3. In this invention, the precise fitting of the limiting sleeve and the limiting block, and the vertical support of the bracket and the strut, achieve stable horizontal and vertical positioning of the crucible inside the cylinder. This effectively avoids displacement of the crucible due to thermal expansion or gas flow during heating, ensuring that the heating coil and the outer wall of the crucible always maintain a uniform distance. Heat can be evenly transferred to the inside of the crucible, reducing the problem of uneven local temperature field caused by crucible displacement from the root. This provides a stable initial temperature field foundation for silicon carbide crystal growth, ensuring the consistency of the crystal growth environment for different batches and different positions of the same batch, and reducing the crystal defect rate caused by temperature field fluctuations. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the overall structure of a constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring according to the present invention. Figure 2 This is a side view of the constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring according to the present invention. Figure 3 This is a cross-sectional structural diagram of the cylinder of a silicon carbide crystal growth furnace constant temperature device with real-time temperature field monitoring according to the present invention. Figure 4 This invention relates to a temperature control device for a silicon carbide crystal growth furnace with real-time temperature field monitoring. Figure 3 A schematic diagram of the structure at point A; Figure 5 This invention relates to a temperature control device for a silicon carbide crystal growth furnace with real-time temperature field monitoring. Figure 3 A schematic diagram of the structure at point B; Figure 6 This is a schematic diagram of the exploded structure of the cylinder in a constant temperature device for silicon carbide crystal growth furnace with real-time temperature field monitoring according to the present invention. Figure 7 This is a partial cross-sectional view of the cylinder of a silicon carbide crystal growth furnace constant temperature device with real-time temperature field monitoring according to the present invention. Figure 8 This invention relates to a temperature control device for a silicon carbide crystal growth furnace with real-time temperature field monitoring. Figure 7 A schematic diagram of the cross-sectional structure; Figure 9 This is a partial cross-sectional view of the temperature measuring mechanism in a silicon carbide crystal growth furnace constant temperature device with real-time temperature field monitoring according to the present invention.

[0019] In the diagram: 1. Carrier plate; 2. Control box; 3. Cylinder; 4. Sealing cover; 5. Crucible; 6. Positioning mechanism; 61. Support rod; 62. Bracket; 63. Limiting block; 64. Limiting sleeve; 7. Temperature measuring mechanism; 71. Mounting frame; 72. Rotating rod; 73. Torsion spring; 74. Roller; 75. Wire; 76. Storage rack; 77. Through hole; 78. Temperature measuring terminal; 79. Flow channel; 710. Stabilizing frame; 711. Exhaust port; 712. Receiving cover; 713. Air inlet pipe; 714. Support plate; 715. Pump body; 716. Exhaust pipe; 717. Mounting base; 8. Constant temperature mechanism; 81. Air supply pipe; 82. Air extraction pipe; 83. Pressure gauge; 84. Heating coil; 85. Support block. Detailed Implementation

[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0021] refer to Figures 1-9The diagram shows a silicon carbide crystal growth furnace constant temperature device with real-time temperature field monitoring. It includes a carrier plate 1, a control box 2 fixedly connected to the upper surface of the carrier plate 1, a cylinder 3 fixedly connected to the upper surface of the carrier plate 1, a crucible 5 placed inside the cylinder 3, a sealing cover 4 installed above the cylinder 3, and a temperature measuring mechanism 7 inside the cylinder 3. The temperature measuring mechanism 7 includes a mounting frame 71 fixedly connected to the inner bottom wall of the cylinder 3. Two symmetrically arranged stabilizers 710 are fixedly connected to the inner wall of the crucible 5. Two symmetrically arranged flow channels 79 are formed on the lower surface of the crucible 5, and the flow channels 79 are located within the stabilizers 710. Exhaust holes 711 are fixedly connected to both sides of the crucible 5, communicating with the flow channels 79. A rotating rod 72 is rotatably connected to the inner wall of the mounting frame 71, and a winding wheel 74 is fixedly connected to one end of the rotating rod 72. The winding wheel 74 is wound with... A wire 75 is wound around the crucible 5, and a temperature measuring terminal 78 is fixedly connected to the end of the wire 75 away from the winding wheel 74. The temperature measuring terminal 78 is located below the flow channel 79, and the specifications of the temperature measuring terminal 78 are consistent with those of the flow channel 79. The temperature measuring mechanism 7 precisely controls the gas output through the pump body 715, which can drive the temperature measuring terminal 78 to monitor the temperature at different depths of the crucible 5 along the flow channel 79. This covers the full range of temperature measurement needs from the bottom of the crucible 5 to the solid-liquid interface of the raw material, meeting the temperature measurement scenarios at different stages of silicon carbide crystal growth. The temperature signal collected by the temperature measuring terminal 78 is transmitted to the control box 2 in real time through the wire 75. The control box 2 quickly identifies local temperature field anomalies through data comparison and immediately adjusts the current distribution of the heating coil 84 for targeted regulation. This can correct temperature field deviations in a timely manner, avoid crystal growth interruption or quality deterioration caused by temperature field anomalies, and improve the controllability of the crystal growth process.

[0022] The inner bottom wall of the cylinder 3 is fixedly connected to the mounting base 717, the inner wall of the mounting base 717 is fixedly connected to the pump body 715, the output end of the pump body 715 is fixedly connected to the exhaust pipe 716, and the end of the exhaust pipe 716 away from the pump body 715 is connected to the mounting frame 71. By adjusting the gas output of the pump body 715, the position of the temperature measuring terminal 78 can be flexibly controlled to meet the needs of temperature monitoring at different depths at different crystal growth stages. The constant temperature mechanism 8 can be conveniently adjusted to the target temperature through the control box 2 to adapt to the growth temperature requirements of silicon carbide crystals of different specifications and types.

[0023] The inner wall of the mounting frame 71 is fixedly connected to a storage rack 76. The surface of the storage rack 76 is provided with a through hole 77. The wire 75 passes through the through hole 77. The interior of the storage rack 76 corresponds to the flow channel 79.

[0024] A torsion spring 73 is fixedly connected to one side of the winding wheel 74. The torsion spring 73 is sleeved on the rotating rod 72, and the end of the torsion spring 73 away from the winding wheel 74 is fixedly connected to the inner wall of the mounting frame 71.

[0025] The pump body 715 has an air inlet pipe 713 fixedly connected to its input end, and a receiving cover 712 fixedly connected to the end of the air inlet pipe 713 away from the pump body 715. The receiving cover 712 is located on one side of the exhaust port 711.

[0026] Among them, a support plate 714 is fixedly connected to the side of the receiving cover 712 away from the crucible 5. One end of the support plate 714 is fixedly connected to the inner wall of the cylinder 3 to ensure that the receiving cover 712 is in a stable state.

[0027] The cylinder 3 is equipped with a positioning mechanism 6 to support the crucible 5, ensuring that the crucible 5 is in a stable state.

[0028] The positioning mechanism 6 includes a support rod 61, which is fixedly connected to the inner bottom wall of the cylinder 3. A bracket 62 is fixedly connected to the upper end of the support rod 61, and the crucible 5 is placed on the bracket 62. A limiting block 63 is fixedly connected to the inner bottom wall of the cylinder 3, and a limiting sleeve 64 is fixedly connected to the lower surface of the crucible 5. The limiting sleeve 64 is fitted onto the limiting block 63. Through the precise fitting of the limiting sleeve 64 and the limiting block 63, and the vertical support of the bracket 62 and the support rod 61, the crucible 5 is stably positioned horizontally and vertically inside the cylinder 3. This effectively prevents the crucible 5 from shifting due to thermal expansion or gas flow during heating, ensuring that the heating coil 84 and the outer wall of the crucible 5 always maintain a uniform distance. Heat can be evenly transferred to the interior of the crucible 5, reducing the problem of uneven local temperature field caused by the displacement of the crucible 5 from the root. This provides a stable initial temperature field foundation for silicon carbide crystal growth, ensures the consistency of the crystal growth environment in different batches and different positions in the same batch, and reduces the crystal defect rate caused by temperature field fluctuations.

[0029] The cylinder 3 is equipped with a constant temperature mechanism 8 for temperature control. The inert gas supply and impurity extraction system can adjust the gas flow rate and vacuum level according to the crystal growth process, adapting to different scenarios from small-batch laboratory research and development to industrial mass production. The high adaptability of the device allows it to meet diverse silicon carbide crystal growth needs without major modifications, significantly improving the device's versatility and practical application value, and reducing equipment investment costs for silicon carbide crystal production companies.

[0030] The constant temperature mechanism 8 includes a support block 85, which is fixedly connected to the inner wall of the cylinder 3. A heating coil 84 is fixedly connected to the surface of the support block 85 and is sleeved on the crucible 5. A suction pipe 82 is fixedly connected to one side of the cylinder 3, and a pressure gauge 83 is installed on the suction pipe 82. A gas supply pipe 81 is fixedly connected to one side of the cylinder 3.

[0031] Working principle of the invention: In the initial stage of device startup, the crucible 5 is precisely positioned. The operator places the crucible 5 containing silicon carbide raw material inside the cylinder 3. The limiting sleeve 64 on the lower surface of the crucible 5 is precisely fitted with the limiting block 63 on the bottom wall of the cylinder 3 to limit the horizontal displacement of the crucible 5. At the same time, the bottom of the crucible 5 is attached to the bracket 62 of the positioning mechanism 6, and the support rod 61 provides vertical support for the bracket 62 to ensure that the crucible 5 remains horizontal. At this time, the temperature measuring terminal 78 of the temperature measuring mechanism 7 is located directly below the flow channel 79 of the crucible 5 under the positioning guide, and the terminal specification matches the flow channel 79, which is ready for subsequent temperature measurement. Then, the sealing cover 4 is covered, and the cylinder 3 is evacuated to the preset vacuum degree through the evacuation pipe 82 to remove impurity air. Then, inert protective gases such as argon are introduced through the gas supply pipe 81 to create an anti-oxidation crystal growth environment. Entering the constant temperature control stage, the control box 2 outputs current to the heating coil 84 of the constant temperature mechanism 8. The heating coil 84 heats the crucible 5 and the raw materials inside through electromagnetic induction. Since the heating coil 84 and the outer wall of the crucible 5 maintain a uniform distance, the heat is evenly transferred to the inside of the crucible 5. At the same time, the control box 2 monitors the gas pressure inside the cylinder 3 in real time, and replenishes inert gas through the gas supply pipe 81. The pump body 715 extracts impurity gas through the gas inlet pipe 713 and the receiving cover 712 to ensure the purity of the protective atmosphere and the stability of the crystal growth environment. In the temperature field monitoring stage, according to the temperature measurement requirements at different stages of crystal growth, the control box 2 sends a command to the pump body 715. The pump body 715 delivers gas to the mounting frame 71 through the exhaust pipe 716. The increased gas pressure inside the frame pushes the temperature measuring terminal 78 up along the flow channel 79. By adjusting the gas output, the rising height of the terminal can be precisely controlled to achieve temperature monitoring at different depths of the crucible 5. If it is necessary to lower the terminal position, the pump body 715 reverses the gas extraction, and the torsion spring 73 on the side of the roller 74 releases its elasticity to drive the rotating rod 72 to rotate. The winding wire 75 pulls the terminal back to the initial position. The temperature measuring terminal 78 converts the collected temperature signal into an electrical signal, which is transmitted to the control box 2 through the wire 75. The control box 2 converts the electrical signal into a temperature value and displays it in real time. At the same time, it compares the temperature measurement data with the target temperature. If a local temperature field abnormality occurs, the current distribution of the heating coil 84 is immediately adjusted to regulate the temperature. Throughout the entire crystal growth cycle, the positioning mechanism 6 continuously maintains the position of the crucible 5 by using the limiting sleeve 64, limiting block 63, and bracket 62 to prevent displacement caused by thermal expansion or gas flow, ensuring the relative position stability between the heating coil 84 and the crucible 5. The stabilizing frame 710 supports the inner wall of the crucible 5 to prevent high-temperature deformation and ensures the integrity of the flow channel 79. The impurity gas extracted by the pump body 715 enters the mounting frame 71 through the exhaust pipe 716 and can also dissipate heat for components such as the rotating rod 72 and the torsion spring 73. The exhaust hole 711 is connected to the flow channel 79 to assist in the discharge of the volatile gas of the raw materials in the crucible 5, which not only prevents gas accumulation from affecting the crystal quality but also provides a smooth channel for the temperature measuring terminal 78 to rise and fall. Finally, through the continuous coordination of each mechanism, a stable and controllable temperature field environment is provided for silicon carbide crystal growth, improving the crystal growth quality and yield.

[0032] Finally, it should be noted that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the protection scope of the present invention.

Claims

1. A temperature control device for a silicon carbide crystal growth furnace with real-time temperature field monitoring, comprising a carrier plate (1), characterized in that: A control box (2) is fixedly connected to the upper surface of the carrier plate (1), and a cylinder (3) is fixedly connected to the upper surface of the carrier plate (1). A crucible (5) is placed inside the cylinder (3), and a sealing cover (4) is installed on the top of the cylinder (3). A temperature measuring mechanism (7) is provided inside the cylinder (3). The temperature measuring mechanism (7) includes a mounting frame (71), which is fixedly connected to the inner bottom wall of the cylinder (3). Two symmetrically arranged stabilizing frames (710) are fixedly connected to the inner wall of the crucible (5), and two symmetrically arranged flow channels (79) are opened on the lower surface of the crucible (5). The flow channel (79) is located in the stabilizer (710). Both sides of the crucible (5) are fixedly connected to exhaust holes (711). The exhaust holes (711) are connected to the flow channel (79). The inner wall of the mounting frame (71) is rotatably connected to a rotating rod (72). One end of the rotating rod (72) is fixedly connected to a winding wheel (74). A wire (75) is wound on the winding wheel (74). The end of the wire (75) away from the winding wheel (74) is fixedly connected to a temperature measuring terminal (78). The temperature measuring terminal (78) is located below the flow channel (79), and the specifications of the temperature measuring terminal (78) are consistent with those of the flow channel (79).

2. The constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring according to claim 1, characterized in that: The inner bottom wall of the cylinder (3) is fixedly connected to a mounting base (717), the inner wall of the mounting base (717) is fixedly connected to a pump body (715), the output end of the pump body (715) is fixedly connected to an exhaust pipe (716), and the end of the exhaust pipe (716) away from the pump body (715) is connected to the mounting frame (71).

3. The constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring according to claim 1, characterized in that: The inner wall of the mounting frame (71) is fixedly connected to a storage rack (76), and the surface of the storage rack (76) is provided with a through hole (77). The wire (75) passes through the through hole (77), and the interior of the storage rack (76) corresponds to the flow channel (79).

4. The constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring according to claim 1, characterized in that: A torsion spring (73) is fixedly connected to one side of the reel (74). The torsion spring (73) is sleeved on the rotating rod (72). The end of the torsion spring (73) away from the reel (74) is fixedly connected to the inner wall of the mounting frame (71).

5. A constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring according to claim 2, characterized in that: An air inlet pipe (713) is fixedly connected to the input end of the pump body (715), and a receiving cover (712) is fixedly connected to the end of the air inlet pipe (713) away from the pump body (715). The receiving cover (712) is located on one side of the exhaust port (711).

6. The constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring according to claim 5, characterized in that: A support plate (714) is fixedly connected to the side of the receiving cover (712) away from the crucible (5), and one end of the support plate (714) is fixedly connected to the inner wall of the cylinder (3).

7. The constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring according to claim 1, characterized in that: The cylinder (3) is provided with a positioning mechanism (6) for supporting the crucible (5).

8. The constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring according to claim 7, characterized in that: The positioning mechanism (6) includes a support rod (61), which is fixedly connected to the inner bottom wall of the cylinder (3). A bracket (62) is fixedly connected to the upper end of the support rod (61). The crucible (5) is placed on the bracket (62). A limiting block (63) is fixedly connected to the inner bottom wall of the cylinder (3). A limiting sleeve (64) is fixedly connected to the lower surface of the crucible (5). The limiting sleeve (64) is fitted onto the limiting block (63).

9. A constant temperature device for a silicon carbide crystal growth furnace with real-time temperature field monitoring according to claim 1, characterized in that: The inside of the cylinder (3) is equipped with a constant temperature mechanism (8) for temperature control.

10. A temperature control device for a silicon carbide crystal growth furnace with real-time temperature field monitoring according to claim 9, characterized in that: The constant temperature mechanism (8) includes a support block (85), which is fixedly connected to the inner wall of the cylinder (3). A heating coil (84) is fixedly connected to the surface of the support block (85), which is sleeved on the crucible (5). A suction pipe (82) is fixedly connected to one side of the cylinder (3), and a pressure gauge (83) is installed on the suction pipe (82). A gas supply pipe (81) is fixedly connected to one side of the cylinder (3).

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