Method for measuring crystal placement offset
By using a non-penetrating camera module to calculate the offset relationship on the first and second surfaces of the grain, the problems of expensive and small field of view of infrared systems are solved, and efficient and low-cost crystal offset detection and bonding are achieved.
Patent Information
- Application Number
- CN202411097865.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-12
- Publication Date
- 2026-02-13
AI Technical Summary
Existing methods for measuring crystal offset use infrared systems, which are expensive and have a small field of view, resulting in slow detection speeds.
A non-penetrating camera module is used to capture images on the first and second surfaces of the grain, calculate the offset relationship, and then use a processing module to calculate the offset compensation value to achieve precise bonding.
This improved testing speed, reduced costs, and ensured precise adhesion between the die and the carrier.
Smart Images
Figure CN121520964A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to a measurement method, in particular to a die offset measurement method. BACKGROUND
[0002] The die offset measurement method is mainly to measure the offset between the bumps of a die and the pads of a wafer. Since infrared rays (IR) have good penetration for silicon, the existing die offset measurement method uses the infrared rays to observe the offset state between the bumps of the die and the pads of the wafer after the die is bonded to the wafer. However, the infrared system is expensive, and the field of view (FOV) of the infrared system is too small, resulting in slow detection speed.
[0003] Therefore, the applicant believes that the above-mentioned defects can be improved, and finally proposes the present application by means of scientific principles. SUMMARY
[0004] The technical problem to be solved by the present application is to provide a die offset measurement method that can effectively improve the defects that may be caused by the existing die offset measurement method.
[0005] The die offset measurement method disclosed by the embodiment of the present application comprises: a pre-step of providing at least one die; wherein the die has a first surface and a second surface located on opposite sides, the first surface of the die is formed with a plurality of bumps, and the plurality of bumps are arranged on the first surface to form a die image; a first moving step of moving the die to a position of a lower non-penetrating camera module; a first offset calculation step of using the lower non-penetrating camera module to take a picture of the first surface of the die, obtaining a positional relationship between the die image and a die contour of the die, and comparing the positional relationship with a standard positional relationship to obtain a first offset relationship; a second moving step of moving the die to a predetermined position of a wafer; a second offset calculation step of using an upper non-penetrating camera module to take a picture of the second surface of the die, and comparing the difference between the die contour of the die and the predetermined position to obtain a second offset relationship; and a compensation calculation step of using a processing module to calculate the first offset relationship and the second offset relationship to generate an offset compensation value, the offset compensation value corresponding to the positional offset relationship between the die contour and the predetermined position of the wafer.
[0006] Optionally, the first offset relationship is a first offset coordinate, the second offset relationship is a second offset coordinate, and the processing module adds the first offset coordinate and the second offset coordinate to generate the offset compensation value.
[0007] Optionally, the carrier plate includes a plurality of pads formed in the predetermined position of the carrier plate and corresponding to the bumps of the die.
[0008] Optionally, after the offset compensation value is calculated, a die placement step is further included, in which the die is moved to the predetermined position on the carrier plate according to the offset compensation value, and the die is placed on the predetermined position.
[0009] Optionally, in the first offset calculation step, the lower non-penetrating camera module captures an image of the first surface of the die to generate a first image, wherein the first image includes the positional relationship between the die image and the die contour of the die, and the first offset calculation step compares the first image with a first ideal image to obtain the first offset relationship, wherein the first ideal image includes the ideal positional relationship.
[0010] Optionally, the standard positional relationship is that the center point of the die image is equal to the center point of the die contour of the die.
[0011] Optionally, in the second offset calculation step, the predetermined position includes at least two positioning points, and the at least two positioning points are respectively located at at least two corners of the predetermined position, and the second offset calculation step compares the positional difference between the two edges corresponding to the at least two positioning points of the die contour and the at least two positioning points of the predetermined position P to obtain the second offset relationship.
[0012] Optionally, the lower non-penetrating camera module, the upper non-penetrating camera module, and the processing module are arranged in an automatic optical inspection device.
[0013] Optionally, the upper non-penetrating camera module, the lower non-penetrating camera module, and the processing module are arranged in a die bonding machine.
[0014] Optionally, the first offset relationship and the second offset relationship include an X-direction offset, a Y-direction offset, and an angle-direction offset.
[0015] In summary, the method for measuring the wafer offset disclosed in the embodiments of the present application can achieve the purposes of increasing the detection speed and saving the cost by "capturing the first surface of the wafer by the lower non-penetrating camera module to obtain the first offset relationship" and "capturing the second surface of the wafer by the upper non-penetrating camera module to obtain a second offset relationship".
[0016] The detailed contents of other effects and embodiments of the present application are described below in combination with the drawings. BRIEF DESCRIPTION OF DRAWINGS
[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments described in the present application, and for those skilled in the art, other drawings can also be obtained without creative labor on the basis of these drawings.
[0018] Figure 1 The flowchart of the method for measuring the wafer offset of the embodiments of the present application;
[0019] Figure 2 The action schematic diagram of the method for measuring the wafer offset of Figure 1 ;
[0020] Figure 3 The lower view schematic diagram of capturing the first surface of the wafer in the first offset calculation step;
[0021] Figure 4 The lower view schematic diagram of the standard position relationship between the wafer image and the wafer contour without offset of the wafer;
[0022] Figure 5 The upper view schematic diagram of calculating the reference center of the carrier plate in the second offset calculation step;
[0023] Figure 6 The upper view schematic diagram of comparing the offset between the wafer contour and the predetermined position in the second offset calculation step;
[0024] Figure 7 The schematic diagram of obtaining an offset compensation value in the compensation calculation step embodiment one;
[0025] Figure 8 The schematic diagram of obtaining the offset compensation value in the compensation calculation step embodiment two;
[0026] Figure 9 The schematic diagram of obtaining the offset compensation value in the compensation calculation step embodiment three;
[0027] Figure 10This is a schematic diagram illustrating the process of obtaining the offset compensation value in Example 4 of the compensation calculation step. Detailed Implementation
[0028] The following specific embodiments illustrate the implementation of the "method for measuring crystal offset" disclosed in this application. Those skilled in the art can understand the advantages and effects of this application from the content disclosed in this specification. This application can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this application. Furthermore, the accompanying drawings are for simple illustration only and are not depictions of actual dimensions, as stated in advance. The following embodiments will further describe the relevant technical content of this application in detail, but the disclosed content is not intended to limit the scope of protection of this application.
[0029] It should be understood that while terms such as "first," "second," and "third" may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another, or one signal from another. Furthermore, the term "or" as used herein should, as appropriate, include any combination of one or more of the related listed items.
[0030] Please see Figures 1 to 10 The figures shown are embodiments of this application. It should be noted that the quantities and shapes mentioned in the accompanying drawings are only used to specifically illustrate the implementation of this application in order to facilitate understanding of the content of this application, and are not intended to limit the scope of protection of this application.
[0031] This embodiment discloses a method S100 for measuring die placement offset, which measures the offset of multiple dies 1 bonded to multiple predetermined positions P on a carrier plate 2, and then obtains an offset compensation value based on the offset. Subsequently, a die bonder (not shown) places the dies 1 on the predetermined positions P of the carrier plate 2 according to the compensation value, thus eliminating the offset problem. It should be noted that the die placement offset measurement method S100 in this embodiment uses the die bonder for measurement, but this application is not limited to this.
[0032] For ease of explanation, the accompanying drawings of this embodiment only show a single grain 1 among the plurality of grains 1 and its corresponding single predetermined position P, and are described accordingly.
[0033] Specifically, the die 1 has a plurality of bumps 11, and the predetermined position P on the carrier board 2 is provided with a plurality of pads 22 corresponding to the plurality of bumps 11 of the die 1. The die bonding machine needs to accurately bond the die 1 to the plurality of pads 22 on the predetermined position P on the carrier board 2 without offset, so that the plurality of bumps 11 of the die 1 and the plurality of pads 22 on the predetermined position P of the carrier board 2 are accurately electrically connected to play a good conductive effect.
[0034] In detail, the measurement method S100 of the die placement offset of the present embodiment is measured by a plurality of non-penetrating camera modules (i.e. visible light measurement), a plurality of offset values are obtained, a total offset value is calculated from the plurality of offset values, and the offset compensation value is obtained. The die bonding machine then places the die according to the offset compensation value to accurately bond the die 1 to the plurality of pads 22 on the predetermined position P on the carrier board 2.
[0035] The measurement method S100 of the die placement offset includes (or sequentially implements) a pre-step S101, a first moving step S103, a first offset calculation step S105, a second moving step S107, a second offset calculation step S109, and a compensation calculation step S111.
[0036] In order to facilitate understanding of the present embodiment, the following will first explain the respective contents of the pre-step S101, the first moving step S103, the first offset calculation step S105, the second moving step S107, the second offset calculation step S109, and the compensation calculation step S111, but the present application is not limited thereto.
[0037] It should be noted that, in order to facilitate understanding of the present embodiment, the accompanying drawings only simply present the measurement relationship between the die 1 and the carrier board 2, so as to clearly present each step in the measurement method S100 of the die placement offset, but the present application is not limited to the accompanying drawings. The following will introduce each step of the measurement method S100 of the die placement offset.
[0038] As shown in Figures 1 to 3 The pre-step S101 provides at least one die 1. The die 1 has a first surface 12 and a second surface 13 on opposite sides. The first surface 12 of the die 1 is formed with a plurality of bumps 11, and the plurality of bumps 11 are arranged on the first surface 12 to form a die image 14. In the present embodiment, the die image 14 is an array of the plurality of bumps 11 arranged, but the present application is not limited thereto. For example, the arrangement of the plurality of bumps 11 can be adjusted according to actual design requirements.
[0039] It is to be noted that, in the present embodiment, a seal ring 15 is formed between the profile of the die 1 and the bumps 11. The seal ring 15 can also be referred to as a die seal ring, which is generally formed between the scribe lane and the integrated circuit on each die on a wafer, and is formed by alternately laminating a plurality of dielectric layers and a plurality of metal layers, wherein the metal layers are connected to each other by vias passing through the dielectric layers. When the wafer sawing process is performed along the scribe lane, the die seal ring can prevent stress cracking from the scribe lane to the integrated circuit during the wafer sawing process. Therefore, the die image 14 of the present embodiment is defined as the image formed by the seal ring 15 and the bumps 11, but the present application is not limited thereto. For example, the image formed by the bumps 11 can also be defined as the die image 14.
[0040] As shown in FIG. 1, the first moving step S103 is to move the die 1 to a position above a lower non-penetrating camera module 3. In the present embodiment, a suction nozzle 4 of a mechanical arm (not shown) of a die bonding machine sucks the second surface 13 of the die 1 and moves the die 1 above the lower non-penetrating camera module 3 of the die bonding machine, wherein the first surface 12 of the die 1 faces the lower non-penetrating camera module 3, but the present application is not limited thereto. For example, the lower non-penetrating camera module 3 can be a stand-alone structure, rather than being arranged in the die bonding machine. Figure 1 With Figure 2 As shown in FIG. 1, the first moving step S103 is to move the die 1 to a position above a lower non-penetrating camera module 3. In the present embodiment, a suction nozzle 4 of a mechanical arm (not shown) of a die bonding machine sucks the second surface 13 of the die 1 and moves the die 1 above the lower non-penetrating camera module 3 of the die bonding machine, wherein the first surface 12 of the die 1 faces the lower non-penetrating camera module 3, but the present application is not limited thereto. For example, the lower non-penetrating camera module 3 can be a stand-alone structure, rather than being arranged in the die bonding machine.
[0041] As shown in FIG. 1, the first moving step S103 is to move the die 1 to a position above a lower non-penetrating camera module 3. In the present embodiment, a suction nozzle 4 of a mechanical arm (not shown) of a die bonding machine sucks the second surface 13 of the die 1 and moves the die 1 above the lower non-penetrating camera module 3 of the die bonding machine, wherein the first surface 12 of the die 1 faces the lower non-penetrating camera module 3, but the present application is not limited thereto. For example, the lower non-penetrating camera module 3 can be a stand-alone structure, rather than being arranged in the die bonding machine. Figures 1 to 4 As shown in FIG. 1, the first moving step S103 is to move the die 1 to a position above a lower non-penetrating camera module 3. In the present embodiment, a suction nozzle 4 of a mechanical arm (not shown) of a die bonding machine sucks the second surface 13 of the die 1 and moves the die 1 above the lower non-penetrating camera module 3 of the die bonding machine, wherein the first surface 12 of the die 1 faces the lower non-penetrating camera module 3, but the present application is not limited thereto. For example, the lower non-penetrating camera module 3 can be a stand-alone structure, rather than being arranged in the die bonding machine.
[0042] It is to be noted that the plurality of dies 1 is cut from a wafer (not shown in the figure). The wafer cutting is performed by a diamond along a cutting path that is pre-arranged in the integrated circuit manufacturing process. The cutting depth is to cut the die 1 completely, but the back adhesive is not damaged. The cutting width is mainly determined by the width of the diamond saw blade. During the cutting process, heat is generated and fine chips are continuously generated. In order to cool and avoid contamination, cooling liquid must be continuously sprayed. The flow rate of the cooling liquid needs to be stable, because the change of the flow rate will affect the contact force between the saw blade and the die 1 during the cutting process. Because the cutting action does not enhance the quality of the chip, the so-called cutting quality refers to the yield of the product. The generation of defective products during the cutting process is mainly due to incorrect cutting position (exceeding the cutting path), serious chipping and unqualified cleanliness.
[0043] It is to be noted that, since the generation of defective products during the cutting process is mainly due to incorrect cutting position, the inaccuracy of the cutting path will cause the positional relationship between the die image 14 and the die contour 16 on the first surface 12 of the die 1 to be offset. When the positional relationship between the die image 14 and the die contour 16 is offset, the die 1 is bonded to the predetermined position P of the carrier board 2, and the plurality of bumps 11 of the die 1 cannot be correctly bonded to the plurality of pads 22 on the predetermined position P of the carrier board 2. Therefore, the first offset calculation step S105 is mainly to calculate the first offset relationship between the die image 14 and the die contour 16.
[0044] In the present embodiment, the lower non-penetrating camera module 3 captures the first surface 12 of the die 1 to generate a first image. It is to be noted that the positional relationship between the die image 14 and the die contour 16 can be obtained from the first image. Specifically, the positional relationship between the die image 14 and the die contour 16 is the positional relationship between the sealing ring 15 of the die image 14 and the die contour 16, but the present application is not limited thereto. For example, in other embodiments not shown in the present application, the positional relationship between the die image 14 and the die contour 16 can also be the positional relationship between the center position of the die image 14 and the die contour 16.
[0045] In this embodiment, the lower non-penetrating camera module 3 is disposed in the die bonding machine. The lower non-penetrating camera module 3 can transmit the first image to the die bonding machine, and the die bonding machine can have a built-in first ideal image. The first ideal image includes the ideal positional relationship between the die image 14 and the die contour 16 of the die 1. This standard positional relationship is that the center point of the die image 14 is equal to the center point of the die contour 16 of the die 1 (e.g., ...). Figure 4 (As shown). The grain bonding mechanism can compare the first image with the second image, which is equivalent to comparing the positional relationship with the standard positional relationship to obtain the first offset relationship, but this application is not limited to this.
[0046] For example, in other embodiments not shown in this application, the die bonding machine can calculate the center position coordinates of the die image 14 from the first image. The die bonding machine compares the center position coordinates with a built-in ideal center position coordinate to obtain the first offset relationship.
[0047] like Figure 1 and Figure 2 As shown, the second moving step S107 involves moving the die 1 to the predetermined position P of the carrier plate 2. In this embodiment, the robotic arm of the die bonding machine moves the die 1 to the predetermined position P of the carrier plate 2 via the suction nozzle 4, and the die 1 and the carrier plate 2 are located below an upper non-penetrating camera module 5 for image acquisition and detection by the upper non-penetrating camera module 5.
[0048] It should be noted that before the second moving step S107, the upper non-penetrating camera module 5 first calculates the reference center of the carrier plate 2 and defines the predetermined position P, but this application is not limited to this. For example, the data of the predetermined position P in this embodiment can be pre-built into the die bonding machine.
[0049] like Figures 1 to 2 and Figures 6 to 7 As shown, the second offset calculation step S109 is to use the upper non-penetrating camera module 5 to capture the second surface 13 of the grain 1, and compare the difference between the grain profile 16 of the grain 1 and the predetermined position P of the carrier plate 2 to obtain a second offset relationship.
[0050] It should be noted that, due to the increasingly smaller size of the current die 1, the die bonding machine may experience offset between the die 1 and the predetermined position P on the carrier plate 2 during the placement process due to various factors. Therefore, the second offset calculation step S109 in this embodiment is used to measure and calculate the offset between the die 1 and the predetermined position P on the carrier plate 2, so as to facilitate the die bonding machine in compensating for the offset at the predetermined position P where the die 1 is bonded to the carrier plate 2, so that the die bonding machine can accurately bond the die 1 to the predetermined position P on the carrier plate 2.
[0051] In this embodiment, the predetermined position P is located in the central region of the carrier plate 2. The central region of the carrier plate 2 has multiple positioning points P1, P2, P3, and P4 corresponding to the predetermined position P. In this embodiment, the predetermined position P has four positioning points P1, P2, P3, and P4, but this application is not limited to this. For example, the number of positioning points P1, P2, P3, and P4 on the predetermined position P can also be two, three, or adjusted according to actual design requirements.
[0052] Since the carrier plate 2 in this embodiment is rectangular, the four positioning points P1, P2, P3, and P4 are located at the center region of the carrier plate 2, corresponding to the four corners of the carrier plate 2. When the die 1 is placed on the carrier plate 2, the upper non-penetrating camera module 5 captures the second surface 13 of the die 1 to generate a second image, and transmits the second image to the die bonding machine. Since the second image includes the image of the die 1 placed on the carrier plate 2, the die bonding machine can compare the difference between the die outline 16 of the die 1 and the predetermined position P to obtain a second offset relationship.
[0053] In detail, the grain bonding mechanism can compare the positional differences between the four corners of the grain contour 16 and the four positioning points P1, P2, P3, P4 of the predetermined position P to obtain the second offset relationship, but this application is not limited to this. For example, when the upper non-penetrating camera module 5 is an automated optical inspection (AOI) device, the upper non-penetrating camera module 5 can directly capture an image of the second surface 13 of the grain 1, and compare the positional differences between the four corners of the grain contour 16 and the four positioning points P1, P2, P3, P4 of the predetermined position P to obtain the second offset relationship.
[0054] It is particularly noted that the upper non-penetrating camera module 5 can be disposed in the die bonding machine and independently operated in the automatic optical inspection device, or integrated in the automatic optical inspection module of the die bonding machine. In addition to the above, the upper non-penetrating camera module 5, the lower non-penetrating camera module 3 and the processing module can all be disposed in the die bonding machine, or the upper non-penetrating camera module 5, the lower non-penetrating camera module 3 and the processing module can all be disposed in the automatic optical inspection device.
[0055] In addition, in the second offset calculation step S109, although four positioning points P1, P2, P3 and P4 are used to obtain the second offset relationship in the embodiment, the present application is not limited thereto. For example, the predetermined position P can include at least two positioning points to obtain the second offset relationship.
[0056] In detail, the predetermined position P includes at least two positioning points, and the at least two positioning points are respectively located at at least two corners of the predetermined position P. The second offset calculation step S109 compares the position difference between the two edge corners of the die contour 16 corresponding to the at least two positioning points and the at least two positioning points of the predetermined position P to obtain the second offset relationship.
[0057] In more detail, the two positioning points can be respectively located at two corners of the predetermined position P on the diagonal line, so that the second offset calculation step S109 can more accurately obtain the second offset relationship.
[0058] As shown in Figure 1 With Figure 7 As shown in the figure, the compensation calculation step S111 uses a processing module (not shown in the figure) to calculate the first offset relationship and the second offset relationship to generate an offset compensation value. The offset compensation value corresponds to the positional offset relationship between the die image 14 and the predetermined position P of the carrier plate 2.
[0059] It is noted that the processing module can be disposed in the automatic optical inspection device, and the automatic optical inspection device can directly calculate the first offset relationship and the second offset relationship to generate the offset compensation value.
[0060] In this embodiment, the compensation calculation step S111 integrates the first offset relationship and the second offset relationship to determine the offset relationship between the die image 14 of the die 1 and the predetermined position P of the carrier plate 2, thereby generating the offset compensation value. This allows the die bonding machine to compensate for the offset caused by the cutting of the die 1 and the offset caused by the placement of the die 1 on the carrier plate 2, and move the die 1 to the predetermined position P on the carrier plate 2. This ensures that the plurality of bumps 11 of the die image 14 are accurately bonded to the plurality of pads 22 (e.g., ...) at the predetermined position P. Figure 1 The crystal placement step S113 shown is illustrated.
[0061] To be more specific, such as Figures 1 to 7 As shown, in this embodiment, for ease of understanding, the offset direction of the grain image 14 relative to the grain profile 16 and the offset direction of the grain profile 16 relative to the predetermined position P are defined by a first direction X and a second direction Y that are perpendicular to each other, and the first direction X and the second direction Y can jointly define a displacement plane.
[0062] It should be noted that the first offset relationship and the second offset relationship include an X-direction offset, a Y-direction offset, and an angular offset. For ease of understanding of this embodiment, only the X-direction offset will be described below. Those skilled in the art can easily deduce the Y-direction offset and the angular offset based on the X-direction offset, so they will not be elaborated here.
[0063] In this embodiment, the first offset relationship is a first offset coordinate, the second offset relationship is a second offset coordinate, and the processing module can add the first offset coordinate and the second offset coordinate to generate a total offset coordinate. Figure 6 and Figure 7 As shown, Figure 6 This is a top view schematic diagram comparing the offset between the grain profile 16 and the predetermined position P for the second offset calculation step. Figure 7 This is a schematic diagram for obtaining the offset compensation value. It should be noted that, for ease of understanding this embodiment, Figure 7 To illustrate how the total offset coordinates are determined and the offset compensation value is obtained in this embodiment, the actual operation is as follows: Figure 6 As shown.
[0064] like Figure 7As shown, when the die image 14 is offset 10 micrometers to the right relative to the die outline 16 in the first direction X (i.e., offset(10,0)), and the die outline 16 is offset 10 micrometers to the left relative to the predetermined position P of the carrier 2 in the first direction X (i.e., offset(-10,0)), the total offset coordinates are: offset(10,0) + offset(-10,0) = offset(0,0). That is, there is no offset between the positions of the plurality of bumps 11 in the die image 14 and the plurality of pads 22 at the predetermined position P.
[0065] like Figure 8 As shown, this is a second embodiment of the first offset relationship and the second offset relationship. When the die image 14 is offset 10 micrometers to the right relative to the die outline 16 in the first direction X (i.e., offset(10,0)), and the die outline 16 is not offset relative to the predetermined position P of the carrier 2 (i.e., offset(0,0)), the total offset coordinate is: offset(10,0) + offset(0,0) = offset(10,0). That is, the position between the plurality of bumps 11 of the die image 14 and the plurality of pads 22 of the predetermined position P is offset 10 micrometers to the right in the first direction X. Thus, the offset compensation value is provided to the die bonding machine to perform the die placement step S113 to compensate for the total offset coordinate (i.e., offset(10,0)).
[0066] like Figure 9 As shown, this is a third embodiment of the first offset relationship and the second offset relationship. When the die image 14 is not offset relative to the die outline 16 (i.e., offset(0,0)), and the die outline 16 is offset 10 micrometers to the left in the first direction X relative to the predetermined position P of the carrier 2 (i.e., offset(-10,0)), the total offset coordinate is: offset(0,0) + offset(-10,0) = offset(-10,0). That is, the position between the plurality of bumps 11 of the die image 14 and the plurality of pads 22 of the predetermined position P is offset 10 micrometers to the left in the first direction X. Thus, the offset compensation value is provided to the die bonding machine to perform the die placement step S113 to compensate for the total offset coordinate (i.e., offset(-10,0)).
[0067] like Figure 10As shown, it is the fourth embodiment of the first offset relationship and the second offset relationship. When the die image 14 is not offset relative to the die contour 16 (i.e., offset(0, 0)), and the die contour 16 is also not offset relative to the predetermined position P of the carrier board 2 (i.e., offset(0, 0)), the total offset coordinate is: offset(0, 0) + offset(0, 0) = offset(0, 0). That is, the positions between the bumps 11 of the die image 14 and the pads 22 of the predetermined position P are not offset. Thus, the die bonder does not need to compensate for the offset to perform the die placement step S113.
[0068] [Technical effects of the embodiments of the present application]
[0069] In summary, the die placement offset measurement method disclosed by the embodiments of the present application, through "the lower non-penetrating camera module photographs the first surface of the die to obtain the first offset relationship" and "the upper non-penetrating camera module photographs the second surface of the die to obtain a second offset relationship", to achieve the purpose of increasing detection speed and saving cost.
[0070] The above-mentioned embodiments and / or implementations are only used to illustrate the preferred embodiments and / or implementations of the present application, and do not limit the embodiments of the present application in any form. Any person skilled in the art can make some changes or modifications to other equivalent embodiments without departing from the technical means disclosed in the present application, but should be considered as the same technology or embodiment as the present application.
Claims
1. A method for measuring crystal offset, characterized in that, The method for measuring the crystal offset includes: A preliminary step: providing at least one grain; wherein the grain has a first surface and a second surface located on opposite sides, the first surface of the grain is formed with a plurality of bumps, and the plurality of bumps are arranged on the first surface to form a grain image; First moving step: Move the die to the position of the non-penetrating camera module; A first offset calculation step: using the lower non-penetrating camera module to capture the first surface of the grain, obtaining a positional relationship between the grain image and a grain outline of the grain, and comparing the positional relationship with a standard positional relationship to obtain a first offset relationship; A second moving step: moving the grain to a predetermined position on a carrier plate; A second offset calculation step: using a non-penetrating camera module to image the second surface of the grain, and comparing the difference between the grain profile and the predetermined position to obtain a second offset relationship; and One compensation calculation step: A processing module is used to calculate the first offset relationship and the second offset relationship to generate an offset compensation value, which corresponds to the positional offset relationship between the grain image and the predetermined position of the carrier.
2. The method for measuring crystal offset according to claim 1, characterized in that, The first offset relationship is a first offset coordinate, the second offset relationship is a second offset coordinate, and the processing module adds the first offset coordinate and the second offset coordinate to generate the offset compensation value.
3. The method for measuring crystal offset according to claim 1, characterized in that, The carrier plate includes a plurality of solder pads, which are formed within the predetermined positions of the carrier plate and correspond to a plurality of bumps of the grain.
4. The method for measuring crystal offset according to claim 1, characterized in that, Following the compensation calculation step, a die placement step is further included: moving the die to the predetermined position on the carrier plate according to the offset compensation value, and setting the die at the predetermined position.
5. The method for measuring crystal offset according to claim 1, characterized in that, In the first offset calculation step, the lower non-penetrating camera module captures the first surface of the grain to generate a first image; wherein, the first image contains the positional relationship between the grain image and the grain outline of the grain, and the first offset calculation step compares the first image with a first ideal image to obtain the first offset relationship; wherein, the first ideal image contains the ideal positional relationship.
6. The method for measuring crystal offset according to claim 5, characterized in that, The standard positional relationship is that the center point of the grain image is equal to the center point of the grain profile.
7. The method for measuring crystal offset according to claim 1, characterized in that, In the second offset calculation step, the predetermined position includes at least two positioning points, which are located at at least two corners of the predetermined position. The second offset calculation step compares the positional differences between the two sides of the grain profile corresponding to the at least two positioning points and the at least two positioning points of the predetermined position P to obtain the second offset relationship.
8. The method for measuring crystal offset according to claim 1, characterized in that, The lower non-penetrating camera module, the upper non-penetrating camera module, and the processing module are disposed in an automatic optical inspection device.
9. The method for measuring crystal offset according to claim 1, characterized in that, The upper non-penetrating camera module, the lower non-penetrating camera module, and the processing module are all mounted on a die bonding machine.
10. The method for measuring crystal offset according to claim 1, characterized in that, The first offset relationship and the second offset relationship include an X-direction offset, a Y-direction offset and an angular direction offset.