Packaging of multiple sensor chips

Abstract

The invention relates to packaging of a multi-sensor chip. According to an embodiment, the sensor component comprises a chip carrier and a first semiconductor chip and a second semiconductor chip, the first semiconductor chip and the second semiconductor chip being arranged on the chip carrier. Alternatively, the second semiconductor chip is arranged on the chip carrier and the first semiconductor chip is arranged on the second semiconductor chip (chip stack). The sensor component further comprises a first sensor element integrated in the first semiconductor chip and a second sensor element integrated in the second semiconductor chip, and a housing formed by a casting material, the housing having an opening. The first sensor element and the second sensor element are located within the opening such that they can interact with the atmosphere surrounding the sensor structural element.

Description

Technical Field

[0001] This specification relates to the packaging (chip housing) of semiconductor structural elements having multiple integrated sensors. Background Technology

[0002] Today, multiple sensor devices are designed as so-called System-in-Packages (SiPs), where the sensor device has a chip within a chip housing, integrating the sensor element and additional electronic circuitry. These integrated sensors are so-called smart sensors, which, in addition to the sensor element (which is sensitive to specific environmental parameters such as pressure, temperature, carbon monoxide, etc.), include additional electronic circuitry that processes (e.g., amplifies, digitizes, filters, etc.) the sensor signal and, when necessary, communicates with other electronic units.

[0003] Various concepts for manufacturing integrated sensors themselves are known. An example is the micromechanical structure integrated into silicon, the so-called MEMS (Micro-Electro-Mechanical Systems). Other examples are sensor elements fabricated using SOI (Silicon-on-Insulator) or SOS (Silicon-on-Sapphire) technologies, which, for example, contain piezoresistive elements. The SiC (Silicon Carbide)-based technology SiCOI (SiC on Insulator) is also known for manufacturing integrated sensor elements for pressure measurement. Subsequently, sensor elements integrated into a chip are called sensor chips.

[0004] MEMS sensors can be designed for multiple sensor applications. MEMS sensors exist for measuring (atmospheric) pressure, measuring air quality, detecting different chemical elements, etc. The properties of the medium surrounding the sensor are then referred to as environmental parameters. In order to measure environmental parameters, the sensor element must be in physical contact with the medium surrounding it. That is, the sensor chip cannot be completely encapsulated in a casting like other integrated circuits (ICs), but must contain openings that allow the sensor element to physically contact the surrounding medium (typically a gas). Therefore, the packaging of integrated sensors must meet different requirements than that of conventional semiconductor chips. In particular, there is a risk of introducing mechanical stress into the sensor chip in MEMS, which can negatively impact the chip's performance. Furthermore, in sensor structures with multiple sensors, a space-saving arrangement may be desirable. Summary of the Invention

[0005] This invention relates to sensor structural elements having multiple integrated sensor chips. The invention also relates to methods for manufacturing these sensor structural elements. Different embodiments and extensions are described from the subject matter of this specification.

[0006] According to an embodiment, the sensor structure element includes a chip carrier and a first semiconductor chip and a second semiconductor chip, wherein either the first and second semiconductor chips are disposed on the chip carrier, or (alternatively) the second semiconductor chip is disposed on the chip carrier, and the first semiconductor chip is disposed on the second semiconductor chip (chip stacking). The sensor structure element also includes a first sensor element integrated in the first semiconductor chip and a second sensor element integrated in the second semiconductor chip, and a housing formed by casting, the housing having an opening. The first and second sensor elements are located within the opening, allowing them to interact with the atmosphere surrounding the sensor structure element.

[0007] According to an embodiment, the manufacturing method includes mounting a first semiconductor chip and a second semiconductor chip on a chip carrier, or (alternatively) bonding the first semiconductor chip to the second semiconductor chip, and mounting the second semiconductor chip (together with the first semiconductor chip) on the chip carrier, wherein a first sensor element is integrated in the first semiconductor chip, and a second sensor element is integrated in the second semiconductor chip. The method further includes manufacturing a chip housing from a casting material using a film-assisted molding (FAM) process, such that an opening is maintained in the chip housing, and the first and second sensor elements are located within the opening and thus can interact with the atmosphere surrounding the semiconductor chip. Attached Figure Description

[0008] The invention is then described in detail with the aid of examples shown in the accompanying drawings. These drawings are not necessarily to scale, and the embodiments shown are not limited to the aspects illustrated. Rather, the value lies in illustrating the principles upon which the embodiments are based. In the drawings:

[0009] Figure 1 An example of a sensor structure element having multiple sensor chips arranged on a chip carrier is shown.

[0010] Figure 2 Another example of a sensor structure element having multiple sensor chips arranged on a chip carrier is shown.

[0011] Figures 3A-3D (Combined into Figure 3) An embodiment of an improved method for manufacturing sensor structural elements having multiple sensor chips arranged on a chip carrier is illustrated with a series of cross-sectional views.

[0012] Figure 4 A variation of the embodiment shown in Figure 3 is illustrated.

[0013] Figure 5 Another embodiment of a sensor structure element having multiple sensor chips arranged on a chip carrier is shown with the aid of a schematic top view.

[0014] Figure 6 and Figure 7 It shows Figure 5 Modifications / variations of the example.

[0015] Figure 8 Another embodiment is shown in which the sensor chip is mounted on other chips via chip-on-chip mounting. Detailed Implementation

[0016] Figure 1 A possible implementation of a sensor device with multiple sensor chips capable of measuring different physical parameters is illustrated. In the example shown, two sensor chips 21 and 22, along with an additional semiconductor chip 23, are arranged on a substrate (chip carrier 10). The chips can be mounted, for example, on a structured metallization layer of the chip carrier by means of soldering. In the example shown, the semiconductor chip 23 is, for example, an application-specific integrated circuit (ASIC) configured to process the sensor signals from sensor chips 21 and 22.

[0017] Sensor chip 21 has a sensor element 210 integrated within the chip, which is sensitive to pressure, for example. Sensor chip 22 has a sensor element 220, which may be sensitive to air humidity, for example. In the example shown, sensor element 210 is protected by a protective layer 211. The protective layer 211 is, for example, a protective gel capable of transmitting the pressure of the surrounding atmosphere to sensor element 210.

[0018] Chips 21, 22, and 23 are electrically contacted in a conventional manner using bonding wire 15. Here, corresponding bonding pads on the upper sides of the two chips can be connected using bonding wires. Furthermore, the bonding pads on the upper sides of the chips can be connected to corresponding bonding pads on the chip carrier 10 (a portion of the metallization layer of the chip carrier 10) using bonding wires. In the example shown, the chip carrier has metallization layers on both sides, wherein a portion of the upper metallization layer can be connected to a portion of the lower metallization layer 11 via a via. Figure 1 It should be understood as a schematic sketch.

[0019] To protect sensor chips 21 and 22 from environmental influences (such as dust particles), the chips on the upper side of the chip carrier are protected by a protective cover 12, which together with the chip carrier 10 forms a chip housing. The protective cover 12 has an opening 13 that allows the sensor chips 21 and 22 inside the housing to interact with the surrounding atmosphere.

[0020] like Figure 1 As can be seen, the protective cover 12 provides only insufficient protection. The bonding wire 15 itself is not protected. This packaging concept is therefore unsuitable for many applications that require a higher degree of robustness.

[0021] Figure 2 Another example of the integrated sensor device 2 is shown, in which the sensor chip 21 is arranged on other chips 23 in a chip-on-chip (CoC) configuration. Chips 23 are, for example, silicon-based semiconductor chips (e.g., ASICs) and are mounted on a chip carrier 10 in a manner known per se. In the example shown, a lead frame can be used as the chip carrier. In certain variations, the chip carrier 10 may also be a multilayer substrate. Chip stacking is a known technique for directly mounting chips onto other chips. Therefore, chip stacking differs from other concepts, such as mounting two or more chips side-by-side on a lead frame.

[0022] Sensor chip 21 has a sensor element 210 on its upper chip surface. This sensor element is configured to interact with the medium surrounding the chip (e.g., air or other gas) and thereby measure the properties of the medium (e.g., physical or chemical parameters). That is, sensor element 210 generates a signal containing information about the property being searched. As mentioned, sensor element 210 can be a microelectromechanical system (MEMS). MEMS as sensor elements are known in themselves and therefore are not described in detail here. With the aid of MEMS, parameters such as the (static) pressure of the surrounding medium can be measured. Other MEMS sensor elements can measure, for example, the sound pressure or the presence or concentration of substances (e.g., ozone, carbon monoxide, nitrogen dioxide, ammonia, etc.).

[0023] The underside surface of sensor chip 21 is fully fixedly connected to the underlying chip 23 (e.g., by soldering or bonding). Electrical connection between sensor chip 21 and the underlying chip 23 is provided via bonding wires 15. This concept is referred to as chip-to-chip bonding. The bonding wires connect corresponding contact surfaces (bonding pads) on the surfaces of sensor chip 21 or the underlying chip 23.

[0024] Semiconductor chip 23 is connected to chip contacts (e.g., pins, solder balls, etc.) of the lead frame (chip carrier 30) via bonding wires 16. Chip 10 is encapsulated using casting material 31 (molding material) during the molding process. After curing, casting material 31 forms a chip shell (chip package), which, however, only partially surrounds chip 23 for sensor applications.

[0025] The casting material 31 (chip housing) has an opening (cavity) in the area where the sensor chip 21 is located. It should be noted that in this case, during manufacturing, the chip 23 is first mounted on the chip carrier 10 (using a relatively soft adhesive layer), and then an electrical connection (bonding wire 16) is established between the chip 23 and the lead frame using wire bonding. The chip housing 31 with the cavity is then manufactured.

[0026] For example, chip housings are manufactured using film-assisted molding (FAM). This technique allows for the near-stressless production of package-sensitive microelectronic components using epoxide-containing molding materials (e.g., casting material 31). FAM and other suitable molding processes are known in themselves and therefore are not described in detail here.

[0027] Only after the chip housing is manufactured is the sensor chip 21 mounted within the cavity onto the underlying semiconductor chip 23, and electrically contacted via bonding wires 15. Depending on the application, the cavity may then remain open or be filled with gel 211. For example, in pressure sensors, the sensor element is typically covered with a soft casting material, such as gel (silicone). Even after curing, this soft casting material must be soft enough to transfer ambient pressure onto the sensor element 210. The purpose of filling the cavity with a soft casting material is to protect the underlying chip from (dirty) particles and corrosion. In chemical sensors (gas sensors) that detect the presence of specific gaseous substances (such as carbon monoxide), the cavity obviously cannot be covered. A suitable soft casting material is significantly different from the molding compound (such as epoxy resin) used to manufacture the chip housing and which is fully cured (in contrast, soft casting materials, such as silicone, remain soft).

[0028] Sensor device 1 should be manufactured relatively expensively, especially as chip-to-chip bonding (after the fabrication of the chip housing) and individual wire bonding of the sensor chip increase the overall cost of the sensor device. Specific geometric parameters must be observed for the casting process (e.g., FAM) used to fabricate the chip housing. For example, minimum distances a1 and a2 must be observed between the bonding pads disposed on chip 23 and the sidewalls of the cavity (see...). Figure 2 Furthermore, minimum distances a3 and a4 must be observed between the chip edges of chip 23 and the bonding pads, and above the bonding line 16 on the upper side of the housing. The sidewalls of the cavity cannot be arbitrarily steep, but require a specific minimum angle θ. In the example shown, angle θ = 0 corresponds to a right angle between the chip surface and the sidewalls of the cavity. Given the given technology-dependent design parameters that must be followed (e.g., a1-a4, θ) for multi-sensor systems (with multiple individual sensor chips), Figure 2 The concept shown is very complex and requires a relatively large chip casing.

[0029] Subsequently, embodiments of an improved method for manufacturing a sensor device having multiple sensor chips are described with reference to Figures 3 (3A-3D).

[0030] In the first part of the method (participating) Figure 3A In a conventional manner, two or more sensor chips, and additional chips if necessary, are mounted on a chip carrier 10 (lead frame) and contacted by bonding wires 15. In the example shown, two sensor chips 21 and 22 are arranged on the lead frame. The sensitive regions of the sensor chips, i.e., the sensor elements, are arranged in the edge regions of the sensor chips. In the example shown, sensor element 210 is arranged in the edge region of sensor chip 21, and sensor elements 221 and 222 are arranged in the edge region of sensor chip 22. The sensor elements are arranged in the edge regions of adjacent sensor chips facing each other. The sensor chip (or one of the sensor chips) may also have application-specific circuitry (e.g., for processing and digitizing sensor signals provided by the sensor elements) and / or one or more interfaces for communicating with other (external) circuitry. Sensor elements 210, 221, and 222 can measure different physical or chemical parameters. For example, sensor element 210 is a pressure-sensitive sensor element, sensor element 221 is an air humidity-sensitive sensor element, and sensor element 22 is a temperature sensor element.

[0031] In the next part of the method (participate) Figure 3B In this process, the chips arranged on the chip carrier 10 are encapsulated in a rigid potting compound to create a chip housing. A single opening (cavity) is provided within the housing, extending over the edge regions of at least two sensor chips, such that the sensor elements of multiple sensor chips are located within the opening. Within the opening, the sensor chips (especially the sensor elements integrated therein) are not covered by the potting compound; instead, the bonding wires 15 are completely encapsulated.

[0032] To manufacture the chip casing, the FAM process (in...) can be used. Figure 3B (As shown in the diagram). In this case, a molding tool covered with a film / thin film 51 is used, wherein, during the molding process, a portion 510 of the thin film directly contacts and covers the surfaces of sensor chips 21 and 22 (and sensor elements 210, 221, 222), thereby ensuring that the covered portion of the chip surface remains free and is not covered by the casting material 31. That is, a portion 510 of the thin film 51 defines the opening described above. Figure 3C The sensor device is shown after the casting 31 forming the chip housing has hardened. The area between two opposing sides of adjacent chips is also filled with casting refractory (see [reference]). Figure 3C (Region 31').

[0033] In the method Figure 3D In one of the illustrated portions, one or more sensor elements are covered by a soft gel layer. In the example shown, sensor element 210 of chip 21 is protected by a layer 210 made of silicone, while other sensor elements 221 and 22 remain free.

[0034] Figure 4 The illustrated embodiment is Figure 3D Modifications to the example. Figure 3D In the example, the gap between two adjacent chips is filled with casting material 31' until it reaches the chip surface (i.e., the surface of the casting material portion 31' is aligned with the surface of the chip), while... Figure 4 In a variant, a portion 31' of the casting material between two adjacent chips 21 and 22 protrudes from the chip surface. This protruding portion 31' forms a barrier that prevents the gel forming the gel layer 211 from flowing onto the adjacent chip 22. Therefore, the operation of the device during manufacturing is simplified.

[0035] Figure 5 A schematic top view shows Figure 3D A variation of the embodiment. Two sensor chips 21 and 22 are fixed on a lead frame (chip carrier 10). The edge region of sensor chip 21 has sensor elements 210 (in... Figure 5 (located on the right edge of chip 21), and the edge region of sensor chip 22 has sensor elements 221 and 222 (in...). Figure 5 (located on the left edge of chip 22). For example, sensor element 210 is used to measure pressure, sensor element 221 is used to measure air humidity, and sensor element 222 is used to measure gas concentration, such as CO2.

[0036] Sensor chips 21 and 22 are electrically connected to each other via bonding wire 15' (chip-to-chip bonding), and sensor 21 is electrically connected to a corresponding chip contact (e.g., solder pad) of chip carrier 10 via bonding wire 15. The chip housing is manufactured as described above with reference to FIG3 (encapsulating the chip in a casting 31), wherein the housing has an opening O1 (cavity) that allows sensor elements 210, 221, 222 to interact freely with the atmosphere surrounding the chip.

[0037] Figure 6 It shows Figure 5A variant of the example is provided, in which a total of six chips are arranged on a chip carrier, and the chip housing has two openings / cavities. Sensor chips 21, 22, 24, 25, and 26 each have sensor elements (e.g., sensor elements 210 and 221), which are shown as shaded rectangles. Sensor chip 22 has a second sensor element 222. Chip 23 may be an ASIC and, for example, preprocesses sensor signals from other chips and transmits the information contained in the sensor signals to other circuitry. The chips are connected to chip contacts on the chip carrier 10 via bonding lines 15. Chip-to-chip bonding lines are labeled 15' as in the previous example. Sensor elements 210 and 221 are located within opening O1. Sensor element 222 of sensor chip 22 and sensor elements of chips 24, 25, and 26 are located within opening O2.

[0038] Figure 7 It shows Figure 5 Another variation of the example, in which a single central opening extends across four substantially parallel chips. In the example shown, semiconductor chips 21, 22, 23, and 24 have relatively large aspect ratios (e.g., length / width > 3). Each chip has one or more sensor elements (in... Figure 7 (Shown in gray shading). The semiconductor chip is elongated, forcing the sensor element to be located near the edge of the corresponding chip (along the longitudinal side in the edge region). As in the previous example, the bonding line is labeled 15 or 15'.

[0039] Figure 8 Another embodiment is shown, which can be considered as Figure 3D Modifications to the example. (Compared to...) Figure 3D Unlike the example shown, instead of two sensor chips 21 and 22 being mounted on the chip carrier 10, only chip 22 is mounted on the chip carrier, while chip 21 is mounted on chip 22 (chip stacking package). Here, the sensor element 210 of chip 21 can be electrically connected to chip 22, for example, using so-called through-silicon via (TSV) technology. In the example shown, the two chips are connected to corresponding chip contacts on the chip carrier 10 via bonding wires 15. The sensor element 210 of sensor chip 21 is located in the edge region of the chip (near the right edge). However, the sensor element 220 of sensor chip 22 is located in the central surface region of chip 22, near chip 21. Both sensor elements 210 and 222 are located in the (only) opening O1 of the chip housing, which can be manufactured, for example, using a FAM process (as described with reference to FIG3).

[0040] The embodiments described herein are subsequently generalized. It is to be understood that the following content is not an complete generalization, but merely an exemplary generalization of the technical features of the embodiments described herein.

[0041] The embodiment relates to a sensor structural element having the following: a chip carrier and a first semiconductor chip and a second semiconductor chip. The two semiconductor chips are disposed on the chip carrier (see, for example, Figures 3-7). Alternatively, the second semiconductor chip may be disposed on the chip carrier, and the first semiconductor chip may be disposed on the second semiconductor chip (chip stacking) (see...). Figure 8 A first sensor element is integrated in a first semiconductor chip, and a second sensor element is integrated in a second semiconductor chip. The sensor elements also have a housing formed by casting. The housing has an opening designed such that the first and second sensor elements are located within the opening, allowing the sensor elements to interact with the atmosphere surrounding the sensor structure.

[0042] In this embodiment, the first and second sensor elements may be sensitive to different physical parameters. These physical parameters include: temperature, pressure, humidity, and the concentration of one or more gases or gas mixtures.

[0043] In one embodiment, the sensor element has bonding wires for electrically connecting the first semiconductor chip and / or the second semiconductor chip to corresponding chip contacts on a chip carrier, wherein the bonding wires are completely encapsulated in a casting. Other bonding wires can electrically connect the first semiconductor chip to the second semiconductor chip (chip-to-chip bonding, see, for example, see...) Figure 5-7 ).

[0044] In this embodiment, the upper sides of the first semiconductor chip and the upper portions of the second semiconductor chip are covered with a casting material. However, the sensor element integrated within the semiconductor chip is exposed. The lower side of the semiconductor chip is connected to the chip carrier.

[0045] In one embodiment, the gap between the first semiconductor chip and the second semiconductor chip is filled with a casting material. Here, in the region of the gap between the semiconductor chips, the casting material may protrude from both semiconductor chips (see [link to documentation]). Figure 4 ).

[0046] In one embodiment, the first sensor element and / or the second sensor element are covered by a gel layer (e.g., silicone) and thus protected from adverse environmental effects. In the aforementioned example, where a portion of the castable protrudes above the semiconductor chip, this portion of the castable forms a barrier that prevents the gel layer protecting the sensor element from flowing onto the adjacent semiconductor chip.

[0047] Another embodiment relates to a method for manufacturing a sensor structure element having multiple sensor elements. In this embodiment, the method includes mounting a first semiconductor chip and a second semiconductor chip on a chip carrier, wherein the first sensor element is integrated in the first semiconductor chip, and the second sensor element is integrated in the second semiconductor chip. The method further includes manufacturing a chip housing from a casting material using a film-assisted molding (FAM) process. Here, the casting mold is designed such that an opening is maintained in the chip housing, and the first and second sensor elements are located in the opening and thus can interact with the atmosphere surrounding the semiconductor chip.

[0048] In an additional (optional) step, the gel layer can be applied to one (or both) of the semiconductor chips, such that the gel layer covers the first sensor element and / or the second sensor element. The aforementioned barrier against the gel layer can be achieved through a suitable mold design in the casting mold. The possible wire bonding process, of course, takes place prior to the FAM process.

[0049] The embodiments described herein are subsequently summarized. It is to be understood that a complete list of the technical features of the embodiments is not involved herein, but only an exemplary summary is provided.

[0050] The first embodiment relates to a sensor structure element having a chip carrier and a first semiconductor chip and a second semiconductor chip, wherein either the first semiconductor chip and the second semiconductor chip are arranged on the chip carrier (see Figure 3 and...). Figure 4-7 Alternatively, the second semiconductor chip is disposed on a chip carrier and the first semiconductor chip is disposed on the second semiconductor chip (chip stacking, see...). Figure 8 The sensor structure also includes a first sensor element integrated in a first semiconductor chip and a second sensor element integrated in a second semiconductor chip (see, for example, [link to relevant documentation]). Figure 4 (sensor element 210 in chip 21 and sensor element 222 in chip 22), and a housing with an opening formed by casting (see, for example, [reference]). Figure 4 (Opening O1). The first and second sensor elements are located within the opening, allowing them to interact with the atmosphere surrounding the sensor structure elements.

[0051] According to an embodiment, the first sensor element and / or the second sensor element may (optionally) be covered by a gel layer (see [reference]). Figure 4 (gel layer 211).

[0052] In some embodiments, the sensor device may have one or more bonding wires that electrically connect a first semiconductor chip to a second semiconductor chip (chip-to-chip bonding, see, for example, [link to documentation]). Figure 5-7In some embodiments, the sensor device may have bonding wires for electrically connecting the first semiconductor chip and / or the second semiconductor chip to corresponding chip contacts on the chip carrier. In both cases, the bonding wires may be completely surrounded by the casting material.

[0053] The upper sides of the first semiconductor chip and the upper sides of the second semiconductor chip may be partially covered by the casting material (in particular, the bonding wires are protected, and only the area around the sensor element remains free, see, for example, see...). Figure 3D and Figure 4 ).

[0054] In some embodiments (see Figure 3D and Figure 4-7 The first semiconductor chip and the second semiconductor chip (and possibly other semiconductor chips) are mounted side-by-side on the chip carrier with their undersides facing each other. In this case, the gap between the first semiconductor chip and the second semiconductor chip can also be made using a casting material (see [link to relevant documentation]). Figure 3D and Figure 4 A portion 31' of the casting material is filled. Optionally, in the region of the gap between the first semiconductor chip and the second semiconductor chip, the casting material may protrude from both semiconductor chips (and form a mechanical barrier, see...). Figure 4 ).

[0055] The first and second sensor elements can be sensitive to different physical parameters (e.g., pressure, humidity, etc.) in particular (but not necessarily).

[0056] Another embodiment relates to a method of manufacturing a sensor structural element. According to the embodiment, the method includes mounting a first semiconductor chip and a second semiconductor chip on a chip carrier, or (alternatively) bonding the first semiconductor chip to the second semiconductor chip, and mounting the second semiconductor chip (together with the first semiconductor chip) on the chip carrier, wherein a first sensor element is integrated in the first semiconductor chip, and a second sensor element is integrated in the second semiconductor chip. The method further includes manufacturing a chip housing from a casting material using a film-assisted molding (FAM) process, such that an opening is maintained in the chip housing and the first and second sensor elements are located within the opening and thus can interact with the atmosphere surrounding the semiconductor chip.

[0057] According to an embodiment, the casting mold for the FAM process is shaped such that, in the region between the first semiconductor chip and the second semiconductor chip, the casting material protrudes from both semiconductor chips (see [link]). Figure 4 ).

[0058] According to an embodiment, the method may include applying a gel layer that covers a first sensor element and / or a second sensor element.

[0059] According to an embodiment, before manufacturing the chip housing, the method may further include: establishing bonding wire connections for electrically connecting the first semiconductor chip and / or the second semiconductor chip to corresponding chip contacts of the chip carrier, and / or establishing one or more bonding wire connections for electrically connecting the first semiconductor chip and the second semiconductor chip (chip-to-chip bonding).

Claims

1. A sensor structural element, comprising: Chip carrier (10); The first semiconductor chip (21) and the second semiconductor chip (22), wherein, Either the first semiconductor chip and the second semiconductor chip are arranged on the chip carrier (10), or the second semiconductor chip (22) is arranged on the chip carrier (10) and the first semiconductor chip (21) is arranged on the second semiconductor chip (22); A first sensor element (210) integrated in the first semiconductor chip (21) and a second sensor element (221, 222) integrated in the second semiconductor chip (22); The shell formed by casting (31) has an opening (O1); The first sensor element (210) and the second sensor element (221, 222) are located within the opening (O1), enabling the first sensor element and the second sensor element to interact with the atmosphere surrounding the sensor structure element.

2. The sensor structural element according to claim 1, wherein, The first sensor element (210) and the second sensor elements (221, 222) are sensitive to different physical parameters.

3. The sensor structural element according to claim 1 or 2, further comprising: Bonding wires (15) are used to electrically connect the first semiconductor chip (21) and / or the second semiconductor chip (22) to the corresponding chip contacts of the chip carrier (10), wherein, The bonding line (15) is completely surrounded by the castable (31).

4. The sensor structural element according to any one of claims 1 to 3, wherein, The upper sides of the first semiconductor chip (21) and the upper sides of the second semiconductor chip (22) are partially covered by the casting material (31).

5. The sensor structural element according to any one of claims 1 to 4, wherein, The first semiconductor chip (21) and the second semiconductor chip (22) are respectively mounted side by side on the chip carrier (10) with their lower sides facing each other.

6. The sensor element according to claim 5, wherein, The gap between the first semiconductor chip (21) and the second semiconductor chip (22) is filled with casting material (31, 31').

7. The sensor element according to claim 6, wherein, In the region of the gap between the first semiconductor chip (21) and the second semiconductor chip (22), the casting material (31') protrudes from the two semiconductor chips (21, 22).

8. The sensor structural element according to any one of claims 1 to 7, wherein, The first sensor element (210) and / or the second sensor element (221, 222) are covered by a gel layer (211).

9. The sensor structure element according to any one of claims 1 to 8, the sensor structure element further comprising: one or more bonding wires (15') electrically connecting the first semiconductor chip (21) to the second semiconductor chip (22).

10. A method comprising: A first semiconductor chip (21) and a second semiconductor chip (22) are mounted on the chip carrier (10), or the first semiconductor chip (21) is bonded to the second semiconductor chip (22) and the second semiconductor chip (21) is mounted on the chip carrier (10), wherein a first sensor element (210) is integrated in the first semiconductor chip (21) and a second sensor element (221, 222) is integrated in the second semiconductor chip (22). A chip housing is manufactured from a casting material (31) using a film-assisted molding (FAM) process, such that an opening is maintained in the chip housing, and the first sensor element (210) and the second sensor element (221, 222) are located in the opening and are thus able to interact with the atmosphere surrounding the semiconductor chip (21, 22).

11. The method according to claim 11, wherein, The casting mold for the FAM process is shaped such that the casting material (31') protrudes from the two semiconductor chips (21, 22) in the region between the first semiconductor chip (21) and the second semiconductor chip (22).

12. The method according to claim 11 or 12, further comprising: A gel layer (211) is applied, which covers the first sensor element (210) and / or the second sensor element (221, 222).

13. The method according to any one of claims 10 to 12, wherein the method further comprises, prior to manufacturing the chip casing: Establish bonding wire connections (15) for electrically connecting the first semiconductor chip (21) and / or the second semiconductor chip (22) to the corresponding chip contacts of the chip carrier (10), and / or One or more bonding wire connections (15') are established to electrically connect the first semiconductor chip (21) to the second semiconductor chip (22).

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