Method and device for analyzing reliability of ESD (Electro-Static Discharge) device
By setting DC and AC voltage tests in ESD devices and combining them with power consumption models to calculate the reliability of ESD devices, the leakage problem caused by heat in existing ESD devices under high temperature and high pressure is solved, and the speed and accuracy of ESD device reliability analysis are improved.
Patent Information
- Application Number
- CN202411111016.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-13
- Publication Date
- 2026-02-13
AI Technical Summary
Existing electrostatic discharge (ESD) reliability verification methods cannot meet the actual needs of customers, especially under high temperature and high pressure conditions. ESD devices are prone to leakage due to repeated switching on and off, which can lead to product power consumption and verification failure.
By setting a first test under DC voltage and a second test under alternating voltage, the two are linked using a power consumption model. The second test duration of the ESD device is calculated based on the first test voltage, leakage current, test duration, second test voltage, and current to determine its reliability, avoiding full-process testing, saving time and improving accuracy.
It enables the determination of ESD device reliability without performing a full second test, improving analysis speed and accuracy and meeting customers' actual usage needs.
Smart Images
Figure CN121522282A_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of semiconductor, in particular to a method for analyzing reliability of ESD device and a device for analyzing reliability of ESD device. BACKGROUND
[0002] Complementary Metal Oxide Semiconductor (CMOS) integrated circuit manufacturing technology has entered the nanometer era. In the process of chip manufacturing, production, testing, transportation and actual use, a certain amount of charge is accumulated in the external environment or internal structure of the chip to form static electricity. Once the static electricity forms a discharge path under certain conditions, the chip may be damaged by a large voltage and a large current. This is the basic process of Electro-Static Discharge (ESD) phenomenon in integrated circuits. Therefore, Electro-Static Discharge (ESD) protection design has become a part that must be considered in all chip designs. The Electro-Static Discharge (ESD) test of electronic product chip level and package level in the industry usually uses human body discharge mode, machine discharge mode and component charging mode.
[0003] However, the current Electro-Static Discharge (ESD) reliability verification cannot meet the actual use requirements of customers. SUMMARY
[0004] The problem solved by the present application is how to analyze the reliability of ESD devices to know the reliability capability of the devices.
[0005] To solve the above problems, the present application provides a method for analyzing reliability of ESD device, comprising: providing an ESD device to be tested; setting a first test temperature, a first test voltage and a first leakage current, performing a first test on the ESD device to be tested, and obtaining a first test duration, the first test voltage being a direct current voltage; setting a second test temperature and a second test voltage, performing a second test on the ESD device to be tested, and obtaining a second test current, the second test voltage being an alternating voltage, and the second test temperature being higher than the first test temperature; and obtaining a second test duration of the ESD device to be tested according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current.
[0006] Optionally, in the step of obtaining the second test duration of the ESD device to be tested according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current, the step further comprises: combining a power consumption model to obtain the second test duration of the ESD device to be tested.
[0007] Optionally, the power consumption model is Q=UIt, where Q is the heat generated by the ESD device under test, U is the test voltage of the ESD device under test, I is the test current of the ESD device under test, and t is the test duration of the ESD device under test.
[0008] Optionally, in the step of obtaining the second test duration of the ESD device under test according to the first test voltage, the first leakage current, the first test duration, the second test voltage, and the second test current, the heat generated by the ESD device under test in the first test process is equal to the heat generated by the ESD device under test in the second test process.
[0009] Optionally, the step of obtaining the first test duration comprises:
[0010] loading the first test voltage to the ESD device under test;
[0011] monitoring the first leakage current during the process of loading the first test voltage;
[0012] obtaining the first test duration according to the size of the first leakage current.
[0013] Optionally, in the step of loading the first test voltage to the ESD device under test, the first test voltage is loaded to the ESD device under test at a first time point.
[0014] Optionally, in the step of monitoring the first leakage current during the process of loading the first test voltage, the second time point is obtained when the first leakage current is greater than a preset value.
[0015] Optionally, in the step of obtaining the first test duration, the first test duration is obtained according to the second time point and the first time point.
[0016] Optionally, in the step of monitoring the first leakage current during the process of loading the first test voltage, the first leakage current is measured at a preset time interval.
[0017] Optionally, in the step of loading the first test voltage to the ESD device under test, the first test voltage is loaded to the ESD device under test at the first test temperature.
[0018] Optionally, the first test temperature is room temperature.
[0019] Optionally, the step of performing the second test on the ESD device under test by setting the second test temperature and the second test voltage comprises:
[0020] loading the second test voltage to the ESD device under test at the second test temperature;
[0021] measuring the second test current after loading the second test voltage.
[0022] Optionally, in the step of setting the second test temperature and the second test voltage and testing the ESD device under test, the second test temperature is 125℃.
[0023] Optionally, the second test voltage is higher than the standard working voltage.
[0024] Optionally, the method further comprises judging the reliability of the ESD device under test according to the second test duration.
[0025] Optionally, in the step of judging the reliability of the ESD device under test, when the second test duration is greater than a preset value, the ESD device under test is determined to be reliable.
[0026] Optionally, the first test is a DC Stress test.
[0027] Correspondingly, the technical scheme of the application further provides an apparatus for analyzing the reliability of an ESD device, comprising:
[0028] a obtaining unit adapted to obtain an ESD device under test and a power consumption model;
[0029] a first testing unit adapted to set a first test temperature, a first test voltage and a first leakage current, test the ESD device under test, and obtain a first test duration, wherein the first test voltage is a direct current voltage;
[0030] a second testing unit adapted to set a second test temperature, a second test voltage, test the ESD device under test, and obtain a second test current, wherein the second test voltage is an alternating voltage, and the second test temperature is higher than the first test temperature;
[0031] an analyzing unit adapted to obtain a second test duration of the ESD device under test according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current.
[0032] Compared with the prior art, the technical scheme of the application has the following advantages:
[0033] In the method for analyzing reliability of an ESD device, the second test duration of the ESD device under test is obtained according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current, and whether the second test duration meets a preset standard is determined, so that the reliability of the ESD device under the second test condition is determined without testing the ESD device under test for a complete second test duration, time for verification test is saved, and the speed and accuracy of analyzing reliability of the ESD device are improved.
[0034] In the alternative, the heat generated by the ESD device under test during the first test is equal to the heat generated by the ESD device under test during the second test. The heat generated by the ESD device under test during the first test under direct current voltage is equal to the heat generated by the ESD device under test during the second test under alternating voltage. The first test and the second test are connected through a power consumption model. The second test duration of the ESD device under test is obtained according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current. The reliability of the ESD device under the second test condition is determined by determining whether the second test duration meets a preset standard, and the speed and accuracy of analyzing reliability of the ESD device are improved. BRIEF DESCRIPTION OF DRAWINGS
[0035] Figure 1 is a flowchart of the method for analyzing reliability of an ESD device according to an embodiment of the present application;
[0036] Figure 2 is a flowchart of the step of obtaining the first test duration according to an embodiment of the present application;
[0037] Figure 3 is an experimental characterization diagram for monitoring the first leakage current according to an embodiment of the present application;
[0038] Figure 4 is a flowchart of the step of obtaining the second test duration according to an embodiment of the present application;
[0039] Figure 5 is a schematic diagram of the device for analyzing reliability of an ESD device according to an embodiment of the present application. DETAILED DESCRIPTION
[0040] As known from the background, the method for analyzing reliability of an ESD device in the prior art has disadvantages.
[0041] In an embodiment, for the ESD test of the electronic product chip level and package level, a human-body discharge model (HBM), a machine discharge model (MM) and a component charging model (CDM) are used, and the ESD device of the electronic product chip level and package level reaches the industry standard in the human-body discharge model (HBM), the machine discharge model (MM) and the component charging model (CDM), but under the condition of high voltage for a short time or high temperature for a long time standard working voltage, the ESD device is repeatedly turned on, a large amount of heat is generated in the process of repeated turning on, and finally the ESD device leaks electricity, which affects the power consumption of the product, the product fails to pass the verification, and the traditional ESD reliability verification cannot meet the actual use requirements of customers.
[0042] To solve the technical problem, the application provides a method for analyzing the reliability of an ESD device, comprising: providing an ESD device to be tested; setting a first test temperature, a first test voltage and a first leakage current, performing a first test on the ESD device to be tested, and obtaining a first test duration, wherein the first test voltage is a direct current voltage; setting a second test temperature and a second test voltage, performing a second test on the ESD device to be tested, and obtaining a second test current, wherein the second test voltage is an alternating voltage, and the second test temperature is higher than the first test temperature; and obtaining a second test duration of the ESD device to be tested according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current.
[0043] In the technical scheme of the application, the heat generated by the first test under the direct current voltage is equal to the heat generated by the second test under the alternating voltage, the first test and the second test are connected through a power consumption model, the second test duration of the ESD device to be tested is obtained according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current, and the reliability of the ESD device under the condition of the second test is obtained. The reliability of the ESD device to be tested under the condition of the second test can be judged without testing the ESD device to be tested for a complete second test duration, the time of verification test is saved, and the speed and accuracy of analyzing the reliability of the ESD device are improved.
[0044] In order to make the above-mentioned purposes, features and advantages of the application more obvious and easy to understand, the specific embodiments of the application will be described in detail below with reference to the accompanying drawings.
[0045] Figure 1is a flowchart of a method for analyzing reliability of an ESD device according to an embodiment of the present application, comprising:
[0046] In step S10, a to-be-tested ESD device is provided.
[0047] In step S11, a first test temperature, a first test voltage and a first leakage current are set, and a first test is performed on the to-be-tested ESD device to obtain a first test duration, wherein the first test voltage is a direct current voltage.
[0048] In step S12, a second test temperature and a second test voltage are set, and a second test is performed on the to-be-tested ESD device to obtain a second test current, wherein the second test voltage is an alternating voltage, and the second test temperature is higher than the first test temperature.
[0049] In step S13, a second test duration of the to-be-tested ESD device is obtained according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current.
[0050] The steps of the method for analyzing reliability of an ESD device will be described in detail below.
[0051] In step S10, the to-be-tested ESD device comprises a substrate, a well region in the substrate, at least two doped regions in the well region, the doped types of the two doped regions being opposite to the doped type of the well region, and an insulating layer on the well region.
[0052] The well region and the two doped regions form a triode. Specifically, in some embodiments of the present application, the well region and the two doped regions form a PNP transistor. In other embodiments, the well region and the two doped regions form an NPN transistor.
[0053] Specifically, in some embodiments of the present application, the insulating layer is a SAlicide Block (SAB) structure. In other embodiments, the material of the insulating layer comprises silicon oxide.
[0054] In step S11, the first test is performed on the to-be-tested ESD device. Specifically, in some embodiments of the present application, the first test is a DC Stress test. The DC Stress test is a test under a direct current high voltage. The high voltage refers to a voltage higher than a standard working voltage.
[0055] Please refer to Figure 2 , Figure 2 is a flowchart of a step of obtaining a first test duration according to an embodiment of the present application, and the step of obtaining a first test duration comprises:
[0056] Step S110, loading the first test voltage to the ESD device to be tested;
[0057] Step S111, monitoring the first leakage current during the process of loading the first test voltage;
[0058] Step S112, obtaining the first test duration according to the size of the first leakage current.
[0059] Specifically, in some embodiments of the present application, the step of obtaining the first test duration comprises:
[0060] In the step S110 of loading the first test voltage to the ESD device to be tested, at a first time, the first test voltage is loaded to the ESD device to be tested.
[0061] In the step S111 of monitoring the first leakage current during the process of loading the first test voltage, when the first leakage current is greater than a preset value, a second time is obtained.
[0062] In the step S112 of obtaining the first test duration, the first test duration is obtained according to the second time and the first time. In the step of obtaining the first test duration, the first test duration is the duration between the first time and the second time.
[0063] In the step S111 of monitoring the first leakage current during the process of loading the first test voltage, the first leakage current is measured at a preset time interval. Specifically, please refer to Figure 3 , Figure 3 is an experimental characterization graph of monitoring the first leakage current in the embodiments of the present application. In some embodiments of the present application, the preset time interval is 10 seconds, that is, the size of the first leakage current is monitored once every 10 seconds to determine whether the first leakage current is greater than a preset value. In other embodiments, the preset time interval can be other durations.
[0064] Specifically, in some embodiments of the present application, Figure 3 In the broken line graph of, the horizontal axis represents the size of the first test voltage, and the unit is volt (V); the vertical axis represents the size of the first leakage current, and the unit is ampere (A). Figure 2 The 8 broken lines in are divided into 4 groups, which respectively represent:
[0065] Group 1: the size of the first leakage current when the first test voltage is loaded at the 0s time;
[0066] Group 2: the size of the first leakage current when the first test voltage is loaded at the 10s time;
[0067] Group 3: the size of the first leakage current when the first test voltage is loaded at the 20s time;
[0068] Group 4: At time 30s, measure the magnitude of the first leakage current under the first test voltage.
[0069] Specifically, in some embodiments of the present invention, in the step of monitoring the first leakage current, in the step of detecting that the first leakage current is greater than a preset value, the preset value is 100 times the value of the first leakage current at time 0s. In other embodiments, the preset value can be other values.
[0070] like Figure 3 As shown, at time 0s, i.e., the first time, the first test voltage is applied to the ESD device under test, and the value of the first leakage current is monitored to be on the order of 10. -13 The preset value is set to be on the order of 10, which is 100 times the value of the first leakage current at time 0s. -11 .
[0071] like Figure 3 As shown, at time 10s, the value of the first leakage current is on the order of 10. -13 The value of the first leakage current at the 10th second is not greater than the preset value.
[0072] like Figure 3 As shown, at time 20s, the value of the first leakage current is on the order of 10. -12 The value of the first leakage current at time 20s is not greater than the preset value.
[0073] like Figure 3 As shown, at time 30s, the value of the first leakage current is on the order of 10. -7 The value of the first leakage current at time 30s is greater than the preset value, so time 30s is taken as the second time.
[0074] The first test duration is obtained based on the first time point (time point 0s) and the second time point (time point 30s), and the first test duration is 30s.
[0075] It should be noted that in the step of applying the first test voltage to the ESD device under test, the first test voltage is greater than the standard operating voltage of the ESD device under test.
[0076] Furthermore, in the step of applying the first test voltage to the ESD device under test, the first test voltage is applied to the ESD device under test at the first test temperature. The first test temperature is room temperature. Specifically, in some embodiments of the present invention, the first test temperature is 25°C.
[0077] In step S12, a second test temperature and a second test voltage are set, and the ESD device under test is subjected to a second test. In some embodiments of the present application, the second test is an HTOL (High Temperature Operating Life) test. The HTOL test is a high-temperature long-time test. The second test has a higher test temperature and a longer test time than the first test. The second test voltage is lower than the first test voltage.
[0078] The second test voltage is higher than the standard working voltage. The second test voltage is 1.1 to 1.5 times the standard working voltage. In some embodiments of the present application, the second test voltage is 1.1 times the standard working voltage.
[0079] Please refer to Figure 4 , Figure 4 is a flowchart of the step of obtaining the second test time in the embodiments of the present application. The step of setting the second test temperature and the second test voltage and subjecting the ESD device under test to the second test includes:
[0080] In step S120, the second test voltage is loaded to the ESD device under test at the second test temperature.
[0081] In step S121, the second test current is measured after the second test voltage is loaded.
[0082] The value of the second test current is considered constant. That is, the value of the second test current measured after the second test voltage is loaded is considered the value of the second test current throughout the second test.
[0083] In the step of setting the second test temperature and the second test voltage and subjecting the ESD device under test to the second test, the second test temperature is 125℃. In some embodiments of the present application, the second test is performed after the second test temperature is stabilized at 125℃.
[0084] In step S13, according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current, the second test duration of the ESD device under test is obtained, and the step further comprises: obtaining the second test duration of the ESD device under test in combination with a power consumption model. Specifically, in some embodiments of the present application, the power consumption model is Q=UIt, wherein Q is the heat generated by the ESD device under test, U is the test voltage of the ESD device under test, I is the test current of the ESD device under test, and t is the test duration of the ESD device under test.
[0085] In the step of obtaining the second test duration of the ESD device under test according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current, the heat generated by the ESD device under test in the first test process is equal to the heat generated by the ESD device under test in the second test process.
[0086] That is:
[0087] When the first test voltage U1 and the first leakage current I1 are set, the first test is performed on the ESD device under test, and the first test duration t1 is obtained, the heat Q1 generated by the ESD device under test is U1*I1*t1;
[0088] When the second test voltage U2 is set, the second test is performed on the ESD device under test, and the second test current I2 is obtained, at this time, the heat Q2 generated by the ESD device under test is U2*I2*t2, and Q2 is equal to the heat Q1 generated by the ESD device under test in the first test condition.
[0089] From Q1=Q2, it can be obtained that U1*I1*t1=U2*I2*t2,
[0090] Since U1, I1, t1, U2 and I2 are known, the value of t2 can be obtained.
[0091] According to the second test duration t2, the reliability of the ESD device under test is judged. In the step of judging the reliability of the ESD device under test, when the second test duration is greater than a preset value, the ESD device under test is judged to be reliable. Specifically, in some embodiments of the present application, the preset value is 1000 hours, that is, when the second test duration is greater than 1000 hours, the reliability of the ESD device under test is judged to meet the process standard.
[0092] Correspondingly, the present application also provides an apparatus for analyzing the reliability of an ESD device, please refer to Figure 5 , the apparatus comprises:
[0093] The acquisition unit 20 is adapted to acquire an ESD device to be tested and a power consumption model;
[0094] The first test unit 21 is adapted to set a first test temperature, a first test voltage and a first leakage current, perform a first test on the ESD device to be tested, and obtain a first test duration, wherein the first test voltage is a direct current voltage;
[0095] The second test unit 22 is adapted to set a second test temperature and a second test voltage, perform a second test on the ESD device to be tested, and obtain a second test current, wherein the second test voltage is an alternating voltage, and the second test temperature is higher than the first test temperature;
[0096] The analysis unit 23 is adapted to obtain a second test duration of the ESD device to be tested according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current.
[0097] The device for analyzing the reliability of an ESD device is adapted to perform the steps of the method for analyzing the reliability of an ESD device. The technical solutions of the acquisition unit 20, the first test unit 21, the second test unit 22 and the analysis unit 23 can refer to the embodiments of the method for analyzing the reliability of an ESD device, and will not be repeated here.
[0098] Although the present application has been disclosed as above, the present application is not limited to this. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present application, and the protection scope of the present application should be subject to the scope defined by the claims.
Claims
1. A method of analyzing the reliability of an ESD device, characterized by, The method comprises: providing an ESD device to be tested; setting a first test temperature, a first test voltage and a first leakage current, performing a first test on the ESD device to be tested, and obtaining a first test duration, wherein the first test voltage is a direct current voltage; setting a second test temperature and a second test voltage, performing a second test on the ESD device to be tested, and obtaining a second test current, wherein the second test voltage is an alternating voltage, and the second test temperature is higher than the first test temperature; obtaining a second test duration of the ESD device to be tested according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current.
2. The method of claim 1, wherein the ESD device is a power MOSFET. In the step of obtaining a second test duration of the ESD device to be tested according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current, a power consumption model is combined to obtain the second test duration of the ESD device to be tested.
3. The method of claim 2, wherein the ESD device is a power MOSFET. The power consumption model is Q=UIt, wherein Q is the heat generated by the ESD device to be tested, U is the test voltage of the ESD device to be tested, I is the test current of the ESD device to be tested, and t is the test duration of the ESD device to be tested.
4. The method of claim 3, wherein the ESD device is a power MOSFET. In the step of obtaining a second test duration of the ESD device to be tested according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current, the heat generated by the ESD device to be tested in the first test process is equal to the heat generated by the ESD device to be tested in the second test process.
5. The method of claim 1, wherein the ESD device is a power MOSFET. The step of obtaining a first test duration comprises: loading the first test voltage to the ESD device to be tested; monitoring the first leakage current during the process of loading the first test voltage; obtaining a first test duration according to the size of the first leakage current.
6. The method of analyzing ESD device reliability of claim 5, wherein, In the step of loading the first test voltage to the ESD device to be tested, the first test voltage is loaded to the ESD device to be tested at a first time point; In the step of monitoring the first leakage current during the process of loading the first test voltage, a second time point is obtained when the first leakage current is greater than a preset value; In the step of obtaining a first test duration, the first test duration is obtained according to the second time point and the first time point.
7. The method of analyzing ESD device reliability of claim 6, wherein, In the step of monitoring the first leakage current during the process of loading the first test voltage, the first leakage current is measured at a preset time interval.
8. The method of claim 5, wherein the ESD device is a power MOSFET. In the step of loading the first test voltage to the ESD device to be tested, the first test voltage is loaded to the ESD device to be tested at the first test temperature.
9. The method of analyzing ESD device reliability of claim 8, wherein, The first test temperature is room temperature.
10. The method of claim 1, wherein the ESD device is a power MOSFET. The step of setting a second test temperature and a second test voltage, and performing a second test on the ESD device to be tested comprises: loading the second test voltage to the ESD device to be tested at the second test temperature; After loading the second test voltage, the second test current is measured.
11. The method of analyzing ESD device reliability of claim 10, wherein, In the step of setting a second test temperature and a second test voltage, and performing a second test on the ESD device to be tested, the second test temperature is 125℃.
12. The method of claim 1 or 10, wherein the ESD device is a power MOSFET. The second test voltage is higher than a standard operating voltage.
13. The method of claim 1, wherein the ESD device is a power MOSFET. Further comprising: According to the second test duration, judging the reliability of the ESD device under test.
14. The method of analyzing ESD device reliability of claim 13, wherein, In the step of judging the reliability of the ESD device under test, when the second test duration is greater than a preset value, judging that the ESD device under test is reliable.
15. The method of claim 1, wherein the ESD device is a power MOSFET. The first test is a DC stress test.
16. An apparatus for analyzing the reliability of ESD devices, characterized in that, Further comprising: An acquisition unit adapted to acquire an ESD device under test and a power consumption model; A first test unit adapted to set a first test temperature, a first test voltage and a first leakage current, perform a first test on the ESD device under test, and obtain a first test duration, wherein the first test voltage is a direct current voltage; A second test unit adapted to set a second test temperature and a second test voltage, perform a second test on the ESD device under test, and obtain a second test current, wherein the second test voltage is an alternating voltage, and the second test temperature is higher than the first test temperature; An analysis unit adapted to obtain a second test duration of the ESD device under test according to the first test voltage, the first leakage current, the first test duration, the second test voltage and the second test current.