Implementation method of glass substrate by using copper planting plunger holes

Abstract

The invention discloses a method for realizing a glass substrate by using a copper planting plunger hole. The method comprises the following steps: processing a via hole in a substrate layer through a glass drilling processing technology; the copper plunger is plugged into the via hole; leveling the surface of the base material layer and the hole edge of the via hole where the copper column is planted; forming seed layers on the upper and lower surfaces of the substrate layer; a photosensitive dry film is attached to the surface of the seed layer; forming a circuit pattern on the photosensitive dry film to form a polymerized dry film; removing the unpolymerized photosensitive dry film; depositing copper atoms on the seed layer to form a deposited copper atom layer; removing the polymerized dry film; and thinning the copper surface on which the copper atom layer is deposited by using an etching process to form a circuit pattern. According to the invention, the copper column is plugged into the via hole through the copper column planting machine, the via hole filling operation is realized, compared with the electroplating hole filling operation in the prior art, the limitation of the depth ratio of the via hole is broken through, and the hole filling operation of the deep via hole can be realized.

Description

Technical Field

[0001] This invention belongs to the field of glass substrate hole plugging technology, specifically relating to a method for implementing glass substrate hole plugging using copper-filled pillars. Background Technology

[0002] Silicon substrate glass is a substrate material used in the manufacture of integrated circuits (ICs) and optoelectronic devices. It possesses excellent chemical stability, thermal stability, and mechanical strength, making it suitable for the manufacture of high-density integrated circuits.

[0003] To achieve vertical interconnection of electrical signals, allowing current and signals between chips or components to be transmitted from one side of a glass substrate to the other, vias need to be created and filled during the glass substrate manufacturing process. In the existing technology, electroplating is mostly used for via filling. However, the electroplating method is limited by the depth ratio of the via diameter to the depth, which has significant limitations. Summary of the Invention

[0004] The purpose of this invention is to provide a method for implementing copper-filled plunger holes in glass substrates, thereby solving the problems mentioned in the background art. The method for implementing copper-filled plunger holes in glass substrates provided by this invention has the advantage of overcoming aspect ratio limitations and enabling deep via filling operations.

[0005] To achieve the above objectives, the present invention provides the following technical solution: a method for implementing a glass substrate using copper-filled plunger holes, comprising the following steps:

[0006] S1. Take a glass substrate as the substrate layer and process through holes in the substrate layer using glass drilling technology.

[0007] S2. Insert the copper pillar into the through hole;

[0008] S3. Using CMP equipment, chemical micro-etching and mechanical polishing are used to smooth the surface of the substrate layer and the edges of the through holes after the copper pillars are implanted.

[0009] S4. Using a Sputter device, a seed layer is formed on the upper and lower surfaces of the substrate layer;

[0010] S5. Clean the seed layer on the upper and lower surfaces of the substrate layer with chemical agents;

[0011] S6. Attach a photosensitive dry film to the surface of the seed layer;

[0012] S7. Using a UV exposure machine, the circuit pattern is formed onto the photosensitive dry film to create a polymerized dry film.

[0013] S8. Using a developing process, remove the unpolymerized photosensitive dry film;

[0014] S9. Using the copper electroplating process, copper atoms are deposited on the seed layer to form a deposited copper atom layer, increasing the copper thickness on the surfaces of the upper and lower seed layers.

[0015] S10. Remove the polymerized dry film using a film removal process;

[0016] S11. Using an etching process, the copper surface of the deposited copper atomic layer is thinned to form a circuit pattern.

[0017] In this invention, further, in S1, the method for processing the via hole includes the following steps:

[0018] S11. Micropores are generated on the substrate layer using a high-energy laser beam;

[0019] S12. Use HF, KOH and NaOH to etch the micro-holes to enlarge their diameter and form vias.

[0020] In a further step of this invention, in S2, a copper pillar is inserted into the through hole using a copper pillar insertion machine.

[0021] In this invention, further, in S3, the method for performing the leveling operation includes the following steps:

[0022] S31. Fix the substrate layer at the bottom of the polishing head and place the polishing pad on the grinding disc;

[0023] S32. The rotary polishing head presses on the polishing pad with a certain pressure, and abrasive liquid is added between the substrate layer surface and the polishing pad.

[0024] S33. Use chemical cleaning methods to remove particles, impurities, and dust from the surface of the substrate layer.

[0025] In this invention, further, in S4, the method for forming the seed layer includes the following steps:

[0026] S41. Use chemical cleaning methods to remove grease and dust from the upper and lower surfaces of the substrate layer and inside the vias;

[0027] S42. Place the cleaned substrate layer into the vacuum chamber of the Sputter equipment and perform a vacuuming operation.

[0028] S43. The target material is evaporated into gaseous atoms by an electron beam, and a seed layer of titanium and copper is generated above and below the substrate layer by magnetron sputtering.

[0029] In this invention, further, in step S5, the method for cleaning the seed layer on the upper and lower surfaces of the substrate layer includes the following steps:

[0030] S51. Use chemical cleaning methods to remove grease and dust from the surface of the upper and lower seed layers;

[0031] S52. Use hot air and then cold air to dry the seed layer in sequence to avoid abnormal oxidation.

[0032] In this invention, further, in step S6, the method of attaching the photosensitive dry film includes the following steps:

[0033] S61. Use a dust removal machine to remove dust from the surfaces of the upper and lower seed layers;

[0034] S62. Then, the photosensitive dry film is attached to the surface of the upper and lower seed layers respectively.

[0035] In a further step of this invention, in S7, the method of forming the circuit pattern onto the photosensitive dry film includes the following steps:

[0036] S71. Use a dust removal machine to remove dust from the surfaces of the upper and lower photosensitive dry films;

[0037] S72. Using a UV exposure machine, the circuit pattern is formed onto the photosensitive dry film, causing the photosensitive dry film exposed to UV light to polymerize and form a polymerized dry film.

[0038] In a further step of this invention, in S8, the method for removing the unpolymerized photosensitive dry film includes the following steps:

[0039] S81. By reacting the chemical solution with the photosensitive dry film, the unpolymerized photosensitive dry film is removed, leaving the polymerized dry film.

[0040] S82. Use hot air and then cold air to dry the seed layer in sequence to avoid abnormal oxidation.

[0041] In a further step of this invention, in S9, the method for forming a deposited copper atom layer includes the following steps:

[0042] S91. Suspend the substrate layer on the fixture and immerse it in a copper sulfate solution;

[0043] S92. When an electric current is applied to the fixture, copper ions in the copper sulfate solution are deposited on the seed layer of the substrate layer to form a deposited copper atom layer.

[0044] Compared with the prior art, the beneficial effects of the present invention are:

[0045] 1. This invention uses a copper column insertion machine to insert copper columns into through holes, thereby achieving hole filling. Compared with the electroplating hole filling operation in the prior art, it breaks through the limitation of the through hole depth ratio and can achieve hole filling operation for deep through holes.

[0046] 2. In this invention, after inserting copper pillars into the through holes using a copper pillar insertion machine, CMP equipment is used to smooth the surface of the substrate layer and the edge of the through holes after the copper pillars have been inserted. This can integrate the brushing and micro-etching processes in the thin copper process, improve the smoothness of the substrate layer surface and avoid cracks in the substrate layer.

[0047] 3. In this invention, when cleaning the seed layer on the upper and lower surfaces of the substrate layer and removing the unpolymerized photosensitive dry film, hot air and cold air are used sequentially to dry the seed layer to avoid abnormal oxidation. Attached Figure Description

[0048] Figure 1 This is a schematic diagram of the structure of step S1 of the present invention.

[0049] Figure 2 This is a schematic diagram of step S2 of the present invention.

[0050] Figure 3 This is a schematic diagram of step S4 of the present invention.

[0051] Figure 4 This is a schematic diagram of the structure of step S6 of the present invention.

[0052] Figure 5 This is a schematic diagram of the structure of step S7 of the present invention.

[0053] Figure 6 This is a schematic diagram of step S8 of the present invention.

[0054] Figure 7 This is a schematic diagram of step S9 of the present invention.

[0055] Figure 8 This is a structural schematic diagram of steps S10-S11 of the present invention.

[0056] In the figure: 1. Substrate layer; 2. Via; 3. Copper pillar; 4. Seed layer; 5. Photosensitive dry film; 6. Polymerized dry film; 7. Deposited copper atom layer. Detailed Implementation

[0057] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0058] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0059] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0060] In the description of this invention, the terms "upper," "lower," "right," and "left," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention. Furthermore, the terms "first" and "second" are used merely for distinction in description and have no special meaning.

[0061] Example

[0062] Please see Figures 1-8 This embodiment provides the following technical solution: a method for implementing a glass substrate using copper-filled plunger holes, comprising the following steps:

[0063] S1. Take a glass substrate as the substrate layer 1, and process the through hole 2 on the substrate layer 1 by glass drilling process.

[0064] S2. Insert the copper pillar 3 into the through hole 2;

[0065] S3. Using CMP equipment (chemical mechanical polishing equipment), the surface of the substrate layer 1 and the edge of the through hole 2 after the copper pillar 3 are smoothed by chemical micro-etching and mechanical grinding.

[0066] S4. Using a Sputter device (magnetron sputtering coating device), seed layers 4 are formed on the upper and lower surfaces of the substrate layer 1;

[0067] S5. Clean the seed layer 4 on the upper and lower surfaces of the substrate layer 1 with chemical agents;

[0068] S6. Attach photosensitive dry film 5 to the surface of seed layer 4;

[0069] S7. Using a UV exposure machine, the circuit pattern is formed onto the photosensitive dry film 5 to form a polymer dry film 6.

[0070] S8. Using a developing process, remove the unpolymerized photosensitive dry film 5;

[0071] S9. Using the copper electroplating process, copper atoms are deposited on the seed layer 4 to form a copper atom deposition layer 7, increasing the copper thickness on the surfaces of the upper and lower seed layers 4.

[0072] S10. Remove the polymer dry film 6 using a film removal process;

[0073] S11. Using an etching process, the copper surface of the deposited copper atom layer 7 is thinned to form a circuit pattern.

[0074] Specifically, in S1, the method for machining the through hole 2 includes the following steps:

[0075] S11. Micro-pores are generated on substrate layer 1 using a high-energy laser beam;

[0076] S12. Use HF (hydrogen fluoride), KOH (potassium hydroxide) and NaOH (sodium hydroxide) to etch the micro-holes, enlarging the size of the micro-holes and forming through holes 2.

[0077] Specifically, in S2, a copper pillar 3 is inserted into the through hole 2 using a copper pillar insertion machine.

[0078] Specifically, in S3, the method for performing leveling work includes the following steps:

[0079] S31. Fix the substrate layer 1 at the bottom of the polishing head and place the polishing pad on the grinding disc;

[0080] S32. The rotating polishing head presses on the polishing pad with a certain pressure, and abrasive liquid is added between the surface of the substrate layer 1 and the polishing pad;

[0081] S33. Use chemical cleaning methods to remove particles, impurities and dust from the surface of substrate layer 1.

[0082] Specifically, in S4, the method for forming seed layer 4 includes the following steps:

[0083] S41. Use chemical cleaning methods to remove grease and dust from the upper and lower surfaces of the substrate layer 1 and the through holes 2;

[0084] S42. Place the cleaned substrate layer 1 into the vacuum chamber of the Sputter equipment and perform a vacuuming operation.

[0085] S43. The target material is evaporated into gaseous atoms by an electron beam, and a seed layer 4 of titanium and copper is generated above and below the substrate layer 1 by magnetron sputtering.

[0086] Specifically, in S5, the method for cleaning the seed layer 4 on the upper and lower surfaces of the substrate layer 1 includes the following steps:

[0087] S51. Use chemical cleaning methods to remove grease and dust from the surfaces of the upper and lower seed layers 4;

[0088] S52. Use hot air and cold air in sequence to dry the seed layer 4 to avoid abnormal oxidation.

[0089] Specifically, in S6, the method of attaching the photosensitive dry film 5 includes the following steps:

[0090] S61. Use a dust removal machine to remove dust from the surfaces of the upper and lower seed layers 4.

[0091] S62. Then, the photosensitive dry film 5 is attached to the surface of the upper and lower seed layers 4 respectively.

[0092] Specifically, in S7, the method for forming the circuit pattern onto the photosensitive dry film 5 includes the following steps:

[0093] S71. Use a dust removal machine to remove dust from the surfaces of the upper and lower photosensitive dry films 5.

[0094] S72. Using a UV exposure machine, the circuit pattern is formed onto the photosensitive dry film 5, causing the photosensitive dry film 5 exposed to UV light to polymerize, forming a polymerized dry film 6.

[0095] Specifically, in S8, the method for removing the unpolymerized photosensitive dry film 5 includes the following steps:

[0096] S81. The unpolymerized photosensitive dry film 5 is removed by reacting the solution with the photosensitive dry film 5, leaving the polymerized dry film 6.

[0097] S82. Use hot air and then cold air to dry the seed layer 4 in sequence to avoid abnormal oxidation.

[0098] Specifically, in S9, the method for forming the deposited copper atomic layer 7 includes the following steps:

[0099] S91. Suspend substrate layer 1 on the fixture and immerse it in copper sulfate solution;

[0100] S92. When an electric current is applied to the fixture, copper ions in the copper sulfate solution are deposited on the seed layer 4 of the substrate layer 1 to form a deposited copper atom layer 7.

[0101] In summary, this invention uses a copper pillar implanter to insert copper pillars 3 into the vias 2, achieving via filling. Compared to the electroplating filling process in the prior art, this invention overcomes the limitation of the via depth ratio of the via 2, enabling the filling of deep vias. After inserting the copper pillars 3 into the vias 2 using the copper pillar implanter, this invention uses CMP equipment to smooth the surface of the substrate layer 1 and the edges of the vias 2 after the copper pillars 3 have been implanted. This integrates the brushing and micro-etching processes in the thin copper process, improving the smoothness of the substrate layer 1 surface and preventing cracks in the substrate layer 1. When cleaning the seed layer 4 on the upper and lower surfaces of the substrate layer 1 and removing the unpolymerized photosensitive dry film 5, this invention sequentially uses hot and cold air to dry the seed layer 4, preventing abnormal oxidation.

[0102] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A method for implementing a glass substrate using copper-filled plunger holes, characterized in that, Includes the following steps: S1. Take a glass substrate as the substrate layer and process through holes in the substrate layer using glass drilling technology. S2. Insert the copper pillar into the through hole; S3. Using CMP equipment, chemical micro-etching and mechanical polishing are used to smooth the surface of the substrate layer and the edges of the through holes after the copper pillars are implanted. S4. Using a Sputter device, a seed layer is formed on the upper and lower surfaces of the substrate layer; S5. Clean the seed layer on the upper and lower surfaces of the substrate layer with chemical agents; S6. Attach a photosensitive dry film to the surface of the seed layer; S7. Using a UV exposure machine, the circuit pattern is formed onto the photosensitive dry film to create a polymerized dry film. S8. Using a developing process, remove the unpolymerized photosensitive dry film; S9. Using the copper electroplating process, copper atoms are deposited on the seed layer to form a deposited copper atom layer, increasing the copper thickness on the surfaces of the upper and lower seed layers. S10. Remove the polymerized dry film using a film removal process; S11. Using an etching process, the copper surface of the deposited copper atomic layer is thinned to form a circuit pattern.

2. The method for implementing a glass substrate using copper-filled plunger holes according to claim 1, characterized in that: In step S1, the method for processing the through hole includes the following steps: S11. Micropores are generated on the substrate layer using a high-energy laser beam; S12. Use HF, KOH and NaOH to etch the micro-holes to enlarge their diameter and form vias.

3. The method for implementing a glass substrate using copper-filled plunger holes according to claim 1, characterized in that: In step S2, a copper column is inserted into the through hole using a copper column implantation machine.

4. The method for implementing a glass substrate using copper-filled plunger holes according to claim 1, characterized in that: In step S3, the method for performing the leveling operation includes the following steps: S31. Fix the substrate layer at the bottom of the polishing head and place the polishing pad on the grinding disc; S32. The rotary polishing head presses on the polishing pad with a certain pressure, and abrasive liquid is added between the substrate layer surface and the polishing pad. S33. Use chemical cleaning methods to remove particles, impurities, and dust from the surface of the substrate layer.

5. The method for implementing a glass substrate using copper-filled plunger holes according to claim 1, characterized in that: In step S4, the method for forming the seed layer includes the following steps: S41. Use chemical cleaning methods to remove grease and dust from the upper and lower surfaces of the substrate layer and inside the vias; S42. Place the cleaned substrate layer into the vacuum chamber of the Sputter equipment and perform a vacuuming operation. S43. The target material is evaporated into gaseous atoms by an electron beam, and a seed layer of titanium and copper is generated above and below the substrate layer by magnetron sputtering.

6. The method for implementing a glass substrate using copper-filled plunger holes according to claim 1, characterized in that: In step S5, the method for cleaning the seed layer on the upper and lower surfaces of the substrate layer includes the following steps: S51. Use chemical cleaning methods to remove grease and dust from the surface of the upper and lower seed layers; S52. Use hot air and then cold air to dry the seed layer in sequence to avoid abnormal oxidation.

7. The method for implementing a glass substrate using copper-filled plunger holes according to claim 1, characterized in that: In step S6, the method for attaching the photosensitive dry film includes the following steps: S61. Use a dust removal machine to remove dust from the surfaces of the upper and lower seed layers; S62. Then, the photosensitive dry film is attached to the surface of the upper and lower seed layers respectively.

8. The method for implementing a glass substrate using copper-filled plunger holes according to claim 1, characterized in that: In step S7, the method of forming the circuit pattern onto the photosensitive dry film includes the following steps: S71. Use a dust removal machine to remove dust from the surfaces of the upper and lower photosensitive dry films; S72. Using a UV exposure machine, the circuit pattern is formed onto the photosensitive dry film, causing the photosensitive dry film exposed to UV light to polymerize and form a polymerized dry film.

9. A method for implementing a glass substrate using copper-filled plunger holes according to claim 1, characterized in that: In step S8, the method for removing the unpolymerized photosensitive dry film includes the following steps: S81. By reacting the chemical solution with the photosensitive dry film, the unpolymerized photosensitive dry film is removed, leaving the polymerized dry film. S82. Use hot air and then cold air to dry the seed layer in sequence to avoid abnormal oxidation.

10. A method for implementing a glass substrate using copper-filled plunger holes according to claim 1, characterized in that: In step S9, the method for forming a deposited copper atom layer includes the following steps: S91. Suspend the substrate layer on the fixture and immerse it in a copper sulfate solution; S92. When an electric current is applied to the fixture, copper ions in the copper sulfate solution are deposited on the seed layer of the substrate layer to form a deposited copper atom layer.

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