Film forming apparatus, method for manufacturing electronic device, and film forming method

Abstract

A film forming apparatus for forming a film of a vapor deposition material onto a pixel forming region of a substrate via a mask having a plurality of opening portions includes a placement portion on which at least a part of a contact region in a peripheral region of the pixel forming region is placed. The mounting portion mounts a substrate between the pixel formation region and the contact region, the substrate having a wall portion formed such that a surface of the pixel formation region protrudes from the contact region toward the mask side.

Description

Technical Field

[0001] This invention relates to techniques for forming films on substrates, and to film forming apparatus, methods for manufacturing electronic devices, and film forming methods. Background Technology

[0002] A known technique involves aligning a substrate and a mask, then depositing a vapor-depositing material onto the substrate via the mask to form a film. The film is formed when the aligned substrate and mask are in close contact with each other. For example, Patent Document 1 discloses a structure for a film-forming apparatus that aligns a substrate mounted on a mounting section with a mask and forms a film.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2022-007538 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] From the viewpoint of improving the tightness of the contact between the substrate and the mask and protecting the mask, it is preferable to suppress particles that may be generated due to the contact between the substrate and the mounting portion from entering between the substrate and the mask.

[0008] This invention provides a technique that can suppress particles from entering between the substrate and the mask.

[0009] Methods for solving problems

[0010] In one aspect of the present invention, a film-forming apparatus deposits a vapor-deposited material onto a pixel-forming region of a substrate via a mask having multiple openings, wherein...

[0011] The film forming apparatus includes a mounting portion that mounts at least a portion of a contact area in the peripheral region of the pixel forming region. The mounting portion mounts the substrate between the pixel forming region and the contact area. The substrate has a wall portion formed such that the surface of the pixel forming region protrudes from the contact area toward the mask side.

[0012] Invention Effects

[0013] According to the present invention, a technique can be provided that can suppress particles from entering between the substrate and the mask. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of a part of an electronic equipment production line.

[0015] Figure 2 This is a schematic diagram of a film-forming apparatus according to one embodiment of the present invention.

[0016] Figure 3A It is a three-dimensional view of the substrate and mask, and a magnified view of a part of the mask.

[0017] Figure 3B This is a magnified view of a portion of the substrate and mask.

[0018] Figure 3C This is a magnified view of a portion of the substrate and mask.

[0019] Figure 4 4A is Figure 3A AA-line sectional view, 4B is Figure 3A BB line section view, 4C is Figure 3A CC-line sectional view.

[0020] Figure 5 5A and 5B are Figure 2 A diagram illustrating the operation of the film-forming device.

[0021] Figure 6 6A and 6B are Figure 2 A diagram illustrating the operation of the film-forming device.

[0022] Figure 7 7A and 7B are Figure 2 A diagram illustrating the operation of the film-forming device.

[0023] Figure 8 8A and 8B are Figure 2 A diagram illustrating the operation of the film-forming device.

[0024] Figure 9 9A and 9B are Figure 2 A diagram illustrating the operation of the film-forming device.

[0025] Figure 10 Figures 10A and 10B are illustrations of other structural examples of the substrate. Detailed Implementation

[0026] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Furthermore, the following embodiments do not limit the technical solutions of the claims. Multiple features are described in the embodiments, but not all of these features are necessarily essential to the invention; moreover, multiple features can be arbitrarily combined. Moreover, in the drawings, the same or identical structures are labeled with the same reference numerals, and repeated descriptions are omitted.

[0027] <First Implementation>

[0028] <Production Line of Electronic Equipment>

[0029] Figure 1This is a schematic diagram showing a portion of the structure of an electronic production line 100 to which the film-forming apparatus of the present invention can be applied. In each figure, arrows X and Y represent mutually orthogonal horizontal directions, and arrow Z represents the vertical direction (direction of gravity). Figure 1 Such production lines are used, for example, for the manufacture of light-emitting elements for organic EL display devices. Production line 100 includes a transport chamber 120 that has an octagonal shape when viewed from above. A substrate 101 is fed into the transport chamber 120 from the transport path 110, and the substrate 101 with the film formed is moved out from the transport chamber 120 to the transport path 111.

[0030] Multiple film-forming devices 1 for forming films on substrate 101 are arranged around the transport chamber 120. A transport chamber 130 is arranged adjacent to each film-forming device 1. A storage chamber 140 for storing a mask 102 is arranged around the transport chamber 130, which has an octagonal shape when viewed from above.

[0031] A transport unit 121 for transporting substrate 101 is disposed in the transport chamber 120. In this embodiment, the transport unit 121 is a horizontally articulated robot that carries the substrate 101 in a horizontal posture on its hand and transports it. The transport unit 121 performs the following actions: transporting the substrate 101, which is brought in from the transport path 110, to the film forming apparatus 1; and transporting the substrate 101, which has been film-formed in the film forming apparatus 1, from the film forming chamber 1 to the transport path 111.

[0032] Each transport chamber 130 is equipped with a transport unit 131 for transporting masks 102. In this embodiment, the transport unit 131 is a horizontally articulated robot that carries the mask 102 in a horizontal posture on its hand and transports it. The transport unit 131 performs the actions of transporting the mask 102 from the storage chamber 140 to the film forming apparatus 1 and transporting the mask 102 from the film forming apparatus 1 to the storage chamber 140.

[0033] <Film Forming Device>

[0034] Figure 2 This is a schematic diagram of a film-forming apparatus 1 according to one embodiment of the present invention. The film-forming apparatus 1 is an apparatus for forming a film of vapor-deposited material on a substrate 101, using a mask 102 to form a thin film of vapor-deposited material with a predetermined pattern. The material of the substrate 101 used for film formation in the film-forming apparatus 1 can be appropriately selected from materials such as glass, resin, and metal. In particular, in this embodiment, the substrate 101 is, for example, a glass substrate on which TFTs (Thin Film Transistors) are formed, or a silicon wafer on which semiconductor elements are formed.

[0035] The vapor deposition material can be organic materials, inorganic materials (metals, metal oxides, etc.), or similar substances. The film deposition apparatus 1 can be used, for example, in manufacturing apparatuses for producing electronic devices and optical components such as display devices (flat panel displays, etc.), thin-film solar cells, and organic photoelectric conversion elements (organic thin-film camera elements), and is particularly suitable for manufacturing apparatuses for producing organic EL panels. In the following description, an example of film deposition on a substrate 101 by vacuum vapor deposition using the film deposition apparatus 1 will be described; however, the present invention is not limited to this, and various film deposition methods such as sputtering or CVD can also be applied.

[0036] The film-forming apparatus 1 has a box-shaped vacuum chamber 2. The internal space of the vacuum chamber 2 is maintained in a vacuum atmosphere or an inert gas atmosphere such as nitrogen. In this embodiment, the vacuum chamber 2 is connected to a vacuum pump (not shown). A vapor deposition unit 10 is arranged inside the vacuum chamber 2. The vapor deposition unit 10 has a vapor deposition source (film-forming source) that releases vapor deposition material (film-forming material) upwards. A baffle 10a is arranged above the vapor deposition unit 10, which restricts and releases the release of vapor deposition material. The baffle 10a is opened and closed using an opening and closing mechanism (not shown). Figure 2 The diagram shows the baffle 10a in the closed state, restricting the release of vapor-deposited material from the vapor deposition unit 10. An anti-adhesion plate 2a is also disposed above the vapor deposition unit 10. The anti-adhesion plate 2a prevents vapor-deposited material from unnecessarily adhering to the following structures disposed in the upper part of the internal space of the vacuum chamber 2.

[0037] A substrate support plate 3, which supports the substrate 101 in a horizontal position, is disposed inside the vacuum chamber 2. In this embodiment, the substrate support plate 3 is an electrostatic chuck, on which the substrate 101 is attracted and held by electrostatic force on its lower surface. A cooling plate 4 is fixed on the substrate support plate 3. The cooling plate 4 is, for example, equipped with a water cooling mechanism, and cools the substrate 101 via the substrate support plate 3 during film formation.

[0038] The substrate support plate 3 and the cooling plate 4 are suspended from the magnet plate 5 by displacement in the Z direction via the support portion 5a. The magnet plate 11 attracts the plate of the mask 102 by magnetic force. During film formation, the substrate 101 is clamped between the magnet plate 11 and the mask 102 by magnetic force, thus improving the adhesion between the substrate 101 and the mask 102.

[0039] The film-forming apparatus 1 includes a mask support unit 6 that supports the mask 102 during film formation. In this embodiment, the mask support unit 6 also performs the transfer operation of the substrate 101 between the transport unit 121 and the substrate support plate 3. The mask support unit 6 includes a pair of support members 6a separated in the X direction. Each support member 6a is raised and lowered by a corresponding actuator 6b. In this embodiment, an actuator 6b is provided for each support member 6a, but a single actuator 6b can also be used to raise and lower the pair of support members 6a. The actuator 6b is, for example, an electric cylinder or an electric ball screw mechanism. The support member 6a has a claw portion F1 (mounting portion) at its lower end. The substrate 101 and the peripheral portion of the mask 102 are mounted on the claw portion F1. Figure 2 In this example, the mask 102 is placed on the claw F1. A pair of support members 6a move up and down synchronously, thereby moving the substrate 101 and the mask 102 up and down.

[0040] The film forming apparatus 1 includes an alignment unit 8, which aligns the substrate 101 with the mask 102. The alignment apparatus 8 includes a drive mechanism 80 and multiple measurement units SR. The drive mechanism 80 includes a distance adjustment unit 81, a support shaft 82, a stand 83, and a position adjustment unit 84.

[0041] The distance adjustment unit 81 is a mechanism that raises and lowers the support shaft 82 along the Z direction, and may include, for example, an electric cylinder or an electric ball screw mechanism. A magnet plate 5 is fixed to the lower end of the support shaft 82. Raising and lowering the support shaft 82 causes the substrate support plate 3 to rise and fall via the magnet plate 5. By raising and lowering the substrate support plate 3, the distance between the substrate 101 and the mask 102 is adjusted, causing the substrate 101 supported by the substrate support plate 3 and the mask 102 to approach and move away (separate) in the thickness direction (Z direction) of the substrate 101. In other words, the distance adjustment unit 81 causes the substrate 101 and the mask 102 to approach in the coinciding direction or move away in the opposite direction. Furthermore, the "distance" adjusted by the distance adjustment unit 81 is the so-called vertical distance (or vertical distance), and the distance adjustment unit 81 can also be described as a unit that adjusts the vertical position of the substrate 101. The distance adjustment unit 81 is mounted on the position adjustment unit 84 via a stand 83.

[0042] The position adjustment unit 84 adjusts the relative position of the substrate 101 with respect to the mask 102 by displacing the substrate support plate 3 in the XY plane. That is, the position adjustment unit 80 can also be described as a unit that adjusts the horizontal position of the mask 102 and the substrate 101. The position adjustment unit 80 can displace the substrate support plate 6 in the X direction, Y direction, and the rotational direction (θ direction) about the axis in the Z direction. In this embodiment, the relative position of the mask 102 is adjusted by fixing its position and displacing the substrate 101; however, adjustment can be performed by displacing the mask 102, or by displacing both the substrate 101 and the mask 102.

[0043] The position adjustment unit 84 includes a fixed plate 20a and a movable plate 20b. Both the fixed plate 84a and the movable plate 84b are rectangular frame-shaped plates, with the fixed plate 84a fixed to the upper wall 20 of the vacuum chamber 2. An actuator is disposed between the fixed plate 20a and the movable plate 20b, causing the movable plate 20b to move relative to the fixed plate 20a in the X, Y, and rotational directions about the Z axis.

[0044] A frame-like platform 83 is mounted on the movable plate 84b, and a distance adjustment unit 81 is supported on the platform 83. When the movable plate 84b is displaced, the platform 83 and the distance adjustment unit 81 are displaced as a whole. As a result, the substrate 101 can be displaced in the rotational directions of the X, Y, and Z axes. An opening is formed in the upper wall portion 20 for the support shaft 82, support members 6a and 7a to pass through. These openings are sealed by sealing members (bellows, etc., not shown) to maintain the airtightness of the vacuum chamber 2.

[0045] The measurement unit SR measures the positional offset between the substrate 101 and the mask 102. In this embodiment, the measurement unit SR is an image-capturing device (camera). The measurement unit SR is disposed on the upper wall 20 and is capable of capturing images within the vacuum chamber 2. Alignment marks (not shown) are formed on the substrate 101 and the mask 102, respectively. The measurement unit SR captures images of each alignment mark on the substrate 101 and the mask 102. The positional offset between the substrate 101 and the mask 102 is calculated based on the position of each alignment mark, and the relative position of the substrate 101 and the mask 102 is adjusted using the position adjustment unit 84 to eliminate the positional offset.

[0046] The control device 9 controls the entire film-forming apparatus 1. The control device 9 includes a processing unit 90, a storage unit 91, an input / output interface (I / O) 92, and a communication unit 93. The processing unit 90 is a processor, such as a CPU, that executes the program stored in the storage unit 92 and controls the film-forming apparatus 1. The storage unit 91 is a storage device such as ROM, RAM, or HDD, which stores various control information in addition to the program executed by the processing unit 90. The I / O 92 is the interface for transmitting and receiving signals between the processing unit 90 and external devices. The communication unit 93 is a communication device that communicates with a host device or other control devices via a communication line.

[0047] <Example of substrate and mask structure>

[0048] Figure 3A , Figure 3B and Figure 3C An example of the structure of substrate 101 and mask 102 is shown. Substrate 101 is a circular silicon wafer, and after film deposition and other processes, multiple chips 101a are cut from substrate 101. Mask 102 is also a circular component, similar to substrate 101, and includes a mask portion 102b corresponding to each chip 101a and a frame portion 102a surrounding the mask portion 102b. Multiple openings (through holes) 102c are formed in the mask portion 102b to allow the vapor deposition material to pass through the substrate 101, and the arrangement of the openings 102c defines the film deposition pattern on substrate 101.

[0049] Figure 3B This is a partial enlarged view of the substrate 101 and the mask 102. Figure 3B The 3BA is a top view (XY top view) of the substrate 101 viewed from the Z direction. Each pixel, corresponding to a plurality of chips 101a, is formed within the pixel forming region 300. A region (peripheral region 310) surrounding the pixel forming region 300 is provided. The claw F1 (mounting part) moves in the left-right direction (X direction) and mounts at least a portion of the peripheral region 310 of the substrate 101 (contact region 311). Figure 3B As shown in 3BA, the substrate 101 is mounted on the claw portion F1 in multiple contact areas 311 in the left-right direction. For example, as Figure 3B As shown in 3BA, the claw part F1 can also be placed in the contact area 311 of two parts on the left and two parts on the right, for a total of four parts.

[0050] Figure 3B 3BB is a side view (XZ side view) of the substrate 101 viewed from the Y direction. A wall portion 312 is formed between the pixel forming region 300 and the contact region 311, protruding from the contact region 311 toward the mask 102 side (mask side) with the surface of the pixel forming region 300 protruding from the contact region 311. Figure 3BIn the 3BB, the height of the wall portion 312 is H1, and the distance (length) between the wall portion 312 of the substrate 101 and the end of the substrate 101 is L1. The substrate 101 with the wall portion 312 has a stepped shape in which the thickness (H0-H1) of the contact area 311 is thinner than the thickness H0 of the pixel forming area 300. The same wall portion 312 is formed in each contact area 311 placed on the claw portion F1, and the same stepped shape is provided. The substrate 101 is a silicon wafer, and the wall portion 312 can be configured as a structure formed on the substrate 101 using a semiconductor manufacturing process.

[0051] Figure 3B 3BC is a side view (XZ side view) of the substrate 101 and mask 102 viewed from the Y direction, and a side view of the mask 102 in its positional relationship with the substrate 101 viewed from the Y direction. A region (peripheral region 410) is provided around the mask region 102e, on which multiple mask portions 102b are formed. The claw F1 moves in the left-right direction (X direction) and places at least a portion of the peripheral region 410 of the mask 102 in a region (contact region 411).

[0052] A wall portion 412 is formed on the mask 102 such that the surface of the mask 102 (the surface of the mask region 102e) facing the pixel forming region 300 of the substrate 101 protrudes from the contact region 411 toward the substrate 101 side (the substrate side). Figure 3B In 3BC, the height of the wall portion 412 is H2. The height H2 of the wall portion 412 of the mask 102 can be the same as the height H1 of the wall portion 312 of the substrate 101, or it can be formed to be higher than the height H1 of the wall portion 312 of the substrate 101. The mask 102 with the wall portion 412 has a stepped shape in which the thickness of the contact area 411 is thinner than the thickness of the mask area 102e.

[0053] The distance (length) between the wall portion 412 of the mask 102 and the end portion of the mask 102 is L2. The wall portion 412 of the mask 102 is formed at a position where the distance L2 between the wall portion 412 of the mask 102 and the end portion of the mask 102 is longer than the distance L1 between the wall portion 312 of the substrate 101 and the end portion of the substrate 101 (L2 > L1). The wall portion 412 can be formed on the mask 102 using mask manufacturing processes.

[0054] Figure 3C This is a partial enlarged view of the substrate 101 and the mask 102. Figure 3C3CA is a partially enlarged view of the substrate 101 and mask 102 in the comparative example. In the structure of the comparative example, the wall portion 312 of the substrate 101 and the wall portion 412 of the mask 102 are not provided. If the substrate 101 and mask 102 are placed on the claw portion F1 and come into contact with the claw portion F1, particles P may be generated due to friction and wear during contact. In the comparative example, the generated particles P are configured to easily intrude into the pixel forming region 300 side. If the generated particles P adhere to the surface between the pixel forming region 300 and the mask 102 (the surface of the mask region 102e), they may become a major cause of impeded adhesion. In addition, depending on the size of the particles P, it may be impossible to ensure an accurate positional relationship between the pixel forming region 300 and the mask 102 during film formation, which may become a major cause of pattern blurring.

[0055] Figure 3C 3CB is a partially enlarged view of the substrate 101 and mask 102 of the embodiment. Even when particles P are generated due to contact with the claw F1 when the substrate 101 and mask 102 are placed on the claw F1, the particles P are held (remained) by the stepped shape of the wall 312, thus suppressing the intrusion (mixing) of particles P into the pixel forming region 300 side. According to the structure of this embodiment, by suppressing the intrusion of particles P into the pixel forming region 300, the adhesion between the pixel forming region 300 and the surface of the mask 102 (the surface of the mask region 102e) can be improved. As a result, an accurate positional relationship can be ensured between the pixel forming region 300 and the mask 102 during film formation, enabling the formation of patterns with higher precision.

[0056] Figure 3C 3CC is shown Figure 3C The figure shows a modified example of the 3CB structure, in which a trapping part 350 is provided in the claw part F1 (placement part), the trapping part 350 trapping particles P that may be generated when the substrate 101 is placed. The trapping part 350 is located near the placement surface SF where the claw part F1 abuts against the contact area 311.

[0057] As an example of the structure of the collecting section 350, particles P can be collected (attracted) by electrostatic force. For example, a charged plate (charged member) may be provided inside the frame of the collecting section 350. By applying a predetermined voltage to the charged plate, the charged plate is charged, and particles are collected by electrostatic force.

[0058] The processing unit 90 can be controlled by applying a predetermined voltage to the charged sheet from the power supply of the film forming apparatus 1. For example, a detection unit (sensor) that detects the amount (quantity, concentration) of particles P may be installed in the film forming apparatus 1, and the processing unit 90 controls the predetermined voltage based on the amount of particles P detected by the detection unit.

[0059] Alternatively, the trapping section 350 can be configured as an adhesive member that traps particles using adhesive force. For example, as the trapping section 350, an adhesive member that traps particles P using adhesive force can be attached near the mounting surface SF. Furthermore, the adhesive member can be attached to the outside of the frame of the trapping section 350 along with a structure that uses electrostatic force, and electrostatic force can be generated using charged sheets (charged members) inside the frame, trapping particles based on the adhesive force and electrostatic force of the adhesive member.

[0060] Additionally, as a structure to suppress particle P from intruding into the pixel forming region 300, a protrusion 360 protruding from the pixel forming region 300 to the mask 102 can be provided between the pixel forming region 300 and the contact region 311. The protrusion 360 can be integrally formed with the substrate 101 by a semiconductor manufacturing process, or it can be a separate component. To improve the adhesion between the substrate 101 and the mask 102, the height of the protrusion 360 only needs to be higher than the height H1 of the wall portion 312 of the substrate 101 and less than the combined height (H1+H2) of the wall portion 312 of the substrate 101 and the wall portion 412 of the mask 102.

[0061] The position of the protrusion 360 is not limited to between the pixel forming region 300 and the contact region 311, and can also be set in the region surrounding the pixel forming region 300. In this case, in order to avoid contact between the protrusion 360 and the mask 102, a recess can be provided in the region surrounding the mask region 102e (peripheral region 410).

[0062] exist Figure 3C In the 3CC, an example is shown in which the protrusion 360 is provided on the substrate 101 side, but it is not limited to this example. The protrusion 360 may also be provided on the mask 102 side.

[0063] Alternatively, a protrusion 360 may be provided instead of a wall portion 312 on the substrate 101. In this case, in order to improve the tightness of the connection between the substrate 101 and the mask 102, the height of the protrusion 360 only needs to be less than or equal to the height H2 of the wall portion 412 of the mask 102.

[0064] Figure 4 4A~ Figure 4 The 4Cs are Figure 3AThe cross-sectional views are shown along line AA, line BB, and line CC. The mask 102 includes a mask body 1020 and a magnetic body 1021 formed on the mask body 1020. The mask body 1020 is made of a non-magnetic material, such as silicon (Si). By using a silicon wafer as the mask body 1020, finer and more precise openings 102c can be formed through the application of semiconductor manufacturing technology. The frame portion 102a is a thick-walled portion with relatively thick walls, and the mask portion 102b is a thin-walled portion with relatively thin walls. The rigidity of the frame portion 102a is higher than that of the mask portion 102b. The mask portion 102b can be formed thinner without significantly reducing the overall rigidity of the mask 102.

[0065] Multiple slits 102d are formed on the surface of the mask body 102. Each slit 102d is a bottomed groove formed within the mask portion 102b and appears as a cross when viewed from above. By forming the slits 102d, deformation within the slits 102d can be tolerated and damage such as cracks in the mask body 102 can be prevented when stress is applied to it.

[0066] The magnetic material 1021 is, for example, a thin film of a magnetic material such as nickel (Ni). In this embodiment, the magnetic force of the magnet plate 5 is used to make the mask 102 and the substrate 101 closely connected during film formation. As in this embodiment, when the mask body 1020 is made of a non-magnetic material, it is not possible to directly obtain a magnetically based close connection. By forming the magnetic material 1021 on the mask body 1020, the magnetic force of the magnet plate 5 can act on the magnetic material 1021, thereby obtaining a magnetically based close connection between the mask 102 and the substrate 101.

[0067] In this embodiment, the magnetic material 1021 is formed on the surface of the mask body 1020, particularly on the surface overlapping with the substrate 101. This allows for a close contact between the magnetic material 102 and the substrate 101. Furthermore, the magnetic material 1021 is formed to surround each opening 102c, and particularly in this embodiment, it is formed as a whole in a lattice shape with mutually orthogonal vertical and horizontal straight lines. This enhances the magnetic-based close contact with the substrate 101 around the openings 102c, enabling the accurate deposition of the vapor-deposited material released through the openings 102c onto the target areas of the substrate 101.

[0068] <Control Example>

[0069] An example of the control of the film-forming apparatus 1 performed by the processing unit 90 of the control unit 9 will be described. Figure 5 5A~ Figure 9 Figure 9B is an operational illustration of the film-forming apparatus 1, showing an example from the loading of the substrate 101 to the film formation and removal. Here, the structures of the substrate 101 and the mask 102 are as described in... Figure 3B , Figure 3C As explained in the text.

[0070] Figure 5 Figure 5A shows the state in which the substrate 101 is moved into the vacuum chamber 2. The substrate 101 is transported by the transport robot 121 to the area below the substrate support plate 3. The substrate adsorption surface 3a on the lower surface of the substrate support plate 3 is horizontal. Next, the substrate 101 is transferred from the transport robot 121 to the substrate support plate 3 using the mask support unit 6. Figure 5 Figure 5B illustrates this action. By raising the support member 6a, the periphery of the substrate 101 is placed on the claw portion F1, the substrate 101 rises from the transport robot 121, and is pressed against the substrate adsorption surface 3a of the substrate support plate 3. The electrostatic chuck of the substrate support plate 3 is activated to adsorb and hold the substrate 101.

[0071] Next, the mask 102 is moved into the vacuum chamber 2. Figure 6 Figure 6A shows the state in which the mask 102 is moved into the vacuum chamber 2. The mask 102 is moved from the storage chamber 140 into the vacuum chamber 2 using a transfer robot 131. The mask 102 is located directly below the substrate 101. Next, the mask 102 is transferred from the transfer robot 131 to the mask support unit 6 and positioned in the alignment position. Figure 6 Figure 6B illustrates this action. By raising the support member 6a, the periphery of the mask 102 is placed on the claw F1, causing the mask 102 to rise from the transport robot 131. The mask 102 is then supported on the support member 6a and, through further raising, is positioned in an alignment position. In this embodiment, the mask 102 is raised to position it in an alignment position, but it could also be configured such that the substrate 101 is lowered to position it in an alignment position.

[0072] Next, perform the alignment action. For example... Figure 7 As shown in Figure 7A, the relative position of the alignment mark on the substrate 101 and the alignment mark on the mask 102 is measured using the measurement unit SR. If the measurement result (positional offset between the substrate 101 and the mask 102) is within the allowable range, the alignment operation ends. If the measurement result is outside the allowable range, a control quantity (displacement of the substrate 101) is set based on the measurement result to bring the positional offset within the allowable range.

[0073] "Position offset" is defined by the distance and direction (X, Y, θ) of the position offset. Based on the set control variables, such as... Figure 7 The position adjustment unit 80 is operated as shown in 7B. This causes the substrate support plate 3 to shift in the XY plane and adjusts the relative position of the substrate 101 with respect to the mask 102.

[0074] Whether the measurement results are within the acceptable range can be determined, for example, by calculating the distance between the alignment marks separately and comparing the average and square of the distance with a preset threshold.

[0075] After adjusting the relative position, the relative position of the alignment marks on the substrate 101 and the mask 102 is measured again using the measurement unit SR. If the measurement result is within the acceptable range, the alignment operation ends. If the measurement result is outside the acceptable range, the relative position of the substrate 101 relative to the mask 102 is adjusted again. This process of measurement and relative position adjustment is repeated until the measurement result is within the acceptable range.

[0076] Next, the film formation process will be carried out. First, the substrate 101 and the mask 102 will be aligned. Figure 8 Figure 8A illustrates this operation. When the substrate support plate 3 is lowered, the substrate 101 is placed on the mask 102, with the entire surface of the substrate 101 to be processed in contact with the mask 102. The magnet plate 5 is pressed against the cooling plate 4, resulting in a configuration where the magnet plate 5, cooling plate 4, substrate support plate 3, substrate 101, and mask 102 are sequentially and closely connected from above. The magnetic force of the magnet plate 5 attracts the mask 102, enabling the mask 102 to be in close contact with the substrate 101. Since a magnetic body 1021 is formed on the mask 102 (… Figure 3A , Figure 4 4B and Figure 4 (4C), therefore, a stronger magnetic attraction force can be obtained. Thus, according to this embodiment, it is possible to improve the adhesion between the substrate 101 and the mask 102 while using a non-magnetic mask 102. In addition, even if stress is generated in the mask body 1020 due to the magnetic force, deformation can be tolerated through the slit 102d and damage such as cracks in the mask 1020 can be prevented.

[0077] Through the above process, the preparation for film formation is completed. Next, as follows... Figure 8 As shown in Figure 8B, the baffle 10a is opened, and the vapor deposition material is released from the vapor deposition unit 10. The vapor deposition material is deposited onto the substrate 101 via the mask 102.

[0078] During the film formation process, the mask 102 and the substrate 101 are removed separately. Figure 9 Figure 9A illustrates the action of removing the mask 102. First, the magnet plate 5 is raised, separating the substrate 101 from the mask 102. After the hand of the transport robot 131 enters under the mask 102, the support member 6a of the mask support unit 6 is lowered, transferring the mask 102 from the support member 6a to the transport robot 131. The transport robot 131 then transports the mask 102 to the storage chamber 140.

[0079] Next, the substrate 101 with the film formed is removed. The support member 6a of the mask support unit 6 is raised, and the substrate 101 is supported from below by the claw F1. The substrate support unit 3 releases its grip on the substrate 101 and transfers the substrate 101 to the support member 6a. After the hand of the transfer robot 121 enters under the substrate 101, as... Figure 9 As shown in 9B, the support member 6a of the mask support unit 6 is lowered, and the substrate 101 is transferred from the support member 6a to the transport robot 121. The transport robot 121 transports the substrate 101 to the transport path 111. Through the above process, the actions from the loading of the substrate 101 to the film formation and removal are completed.

[0080] In addition, Figure 4 In this paper, an example of magnetic material 1021 being formed on mask body 1020 is described, but it is also possible that magnetic material is formed on substrate 101. Figure 10 Figures 10A and 1010B illustrate one example. These figures are equivalent to... Figure 4 The figure shows a cross-sectional view of 4B, and also shows a cross-sectional view of the substrate 101 aligned with the mask 102.

[0081] like Figure 10 As shown in Figure 10A, a magnetic body 101d is formed around a pixel region 101b, which is the area to be vapor-deposited, in the substrate 101. In the illustrated example, the magnetic body 101d is formed on the surface of a bank 101c surrounding the pixel region 101b. The magnetic body 101d is, for example, a thin film of a magnetic material such as nickel (Ni). The magnetic bodies 101d and 1021 are disposed at locations where they overlap when the substrate 101 and the mask 102 are properly aligned.

[0082] Figure 10 Figure 10B shows the state where the substrate 101 and mask 102 are overlapped after the substrate 101 and mask 102 are aligned. The magnetic force of the magnet plate 5 causes the magnetic body 101d and magnetic body 1021 to attract each other, thereby improving the adhesion between the substrate 101 and mask 102. Moreover, by causing the magnetic body 101d and magnetic body 1021 to attract each other, the relative position of the opening 102c and a pixel region 101b is self-aligned, and the vapor deposition material can be more accurately deposited onto the pixel region 101b, which is the vapor deposition target area, through the opening 102c.

[0083] <Other Implementation Methods>

[0084] The present invention can also be implemented by supplying a program that implements one or more functions of the above embodiments to a system or device via a network or storage medium, and having one or more processors in the computer of the system or device read and execute the program. Alternatively, it can be implemented using a circuit (e.g., an ASIC) that implements one or more functions.

[0085] This invention is not limited to the embodiments described above, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the claims are appended to disclose the scope of the invention.

[0086] This application claims priority based on Japanese Patent Application No. 2023-126420, filed on August 2, 2023, the entire contents of which are incorporated herein by reference.

[0087] Explanation of reference numerals in the attached figures

[0088] 1: Film forming apparatus, 8: Alignment unit, 10: Evaporation unit (film forming source), 101: Substrate, 102: Mask, 300: Pixel forming area, 310:, 311:, 312: Wall (wall of substrate), 412: Wall (wall of mask).

Claims

1. A film-forming apparatus, wherein the film-forming apparatus deposits a vapor-deposited material onto a pixel-forming region of a substrate via a mask having a plurality of openings, characterized in that, The film-forming apparatus includes a mounting section that mounts at least a portion of the contact area in the peripheral region of the pixel-forming region. The mounting portion places the substrate between the pixel forming region and the contact region, and the substrate has a wall portion formed such that the surface of the pixel forming region protrudes from the contact region toward the mask side.

2. The film-forming apparatus according to claim 1, characterized in that, The substrate having the wall portion has a stepped shape in which the thickness of the contact area is thinner than the thickness of the pixel forming area.

3. The film-forming apparatus according to claim 2, characterized in that, The substrate is a silicon wafer, and the wall portion is a structure formed on the substrate using semiconductor manufacturing processes.

4. The film-forming apparatus according to claim 1, characterized in that, A protrusion extending from the pixel forming area to the mask side is provided between the pixel forming area and the contact area.

5. The film-forming apparatus according to claim 1, characterized in that, At least a portion of the contact area in the peripheral region where the mask is placed on the mounting portion. The mounting portion holds the mask, and the mask has a wall portion formed such that the surface of the mask facing the pixel forming region protrudes from the contact area of ​​the mask toward the substrate side.

6. The film-forming apparatus according to claim 5, characterized in that, The mask wall is formed at a position where the distance between the mask wall and the end of the mask is greater than the distance between the substrate wall and the end of the substrate.

7. The film-forming apparatus according to claim 5, characterized in that, The mask having the wall portion has a stepped shape in which the thickness of the contact area of ​​the mask is thinner than the thickness of the area of ​​the mask facing the pixel forming area.

8. The film-forming apparatus according to claim 1, characterized in that, In the mounting section, a particle-collecting section is provided near the mounting surface that abuts against the contact area.

9. The film-forming apparatus according to claim 8, characterized in that, The collecting section includes an electrified component, which uses the electrostatic force of the electrified component, which is charged by applying a predetermined voltage, to collect the particles.

10. The film-forming apparatus according to claim 9, characterized in that, The film-forming apparatus also includes: The detection unit detects the amount of the particles; and The processing unit controls a predetermined voltage based on the amount of particles detected by the detection unit.

11. The film-forming apparatus according to claim 8, characterized in that, As the trapping part, an adhesive member is attached near the mounting surface to trap the particles by means of adhesive force.

12. A method for manufacturing an electronic device, characterized in that, The manufacturing method of the electronic device includes a film-forming step, wherein a film is formed on a substrate using the film-forming apparatus according to any one of claims 1 to 11.

13. A film deposition method, wherein the film deposition method is a film deposition method of a film deposition apparatus for depositing vapor-deposited material onto a pixel forming region of a substrate via a mask having a plurality of openings, characterized in that, The film formation method includes a placement step, in which at least a portion of the contact area of ​​the peripheral region of the pixel forming region is placed on the placement portion of the film formation apparatus. In the placement process, the substrate is placed between the pixel forming region and the contact region in the placement portion, and the substrate has a wall portion formed such that the surface of the pixel forming region protrudes from the contact region toward the mask side.

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