Photoelectric device preparation method based on dry transfer printing and product
By dry-transferring transparent conductive films onto transparent tape and then laminating them onto optoelectronic devices, the problem of film damage caused by solution methods is solved, thereby improving the fabrication yield and performance of optoelectronic devices and enhancing device stability.
Patent Information
- Application Number
- CN202511541371.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-10-27
- Publication Date
- 2026-02-17
AI Technical Summary
When preparing transparent flexible top electrodes using solution methods, damage can be caused to the underlying film layer, affecting the performance and stability of optoelectronic devices.
A dry transfer method is used to coat a conductive solution onto a transparent tape to form a transparent conductive film. The transparent tape is then pressed onto a functional structure substrate to avoid damage to the film layer caused by solvent corrosion and mechanical stress. The tape substrate layer serves as an encapsulation layer to protect the device.
This improves the fabrication yield and performance of optoelectronic devices, avoids chemical damage to the film layer caused by solution methods, and enhances the stability and reliability of the devices.
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Figure CN121548211A_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of display technology, specifically relating to a method and product for fabricating optoelectronic devices based on dry transfer printing. Background Technology
[0002] In the field of modern optoelectronics, transparent flexible top electrodes play an indispensable role as a key component in many emerging optoelectronic devices. With the rapid development of wearable devices, flexible display technology, and portable energy harvesting systems, the demand for optoelectronic devices is increasing, and the performance requirements are becoming increasingly stringent.
[0003] Solution methods, as a simple, flexible, and mass-production-ready electrode fabrication technique, have been widely used in the preparation of transparent electrodes. However, in practical applications, the use of solution methods to prepare top electrodes can cause varying degrees of damage to the underlying film layers. Factors such as the corrosiveness of the solvent, mechanical stress during the coating process, and volume shrinkage during the drying process can all lead to damage to the underlying film layers, severely restricting the performance improvement and practical application of optoelectronic devices. Summary of the Invention
[0004] This application aims to provide a method and product for fabricating optoelectronic devices based on dry transfer printing, in order to solve the adverse effects of solution-based top electrode fabrication on the performance of optoelectronic devices.
[0005] To solve the above-mentioned technical problems, this application is implemented as follows: The first aspect of this application proposes a method for fabricating optoelectronic devices based on dry transfer printing, the method comprising: The transparent tape is fixed to the platform, with the sticky side of the transparent tape facing away from the platform; A conductive solution is applied to the adhesive surface of the transparent tape by spin coating, spraying, or scraping to obtain a transparent conductive film. Prepare a functional structure substrate, the functional structure substrate comprising, in sequence: a substrate, a bottom electrode, and a light-emitting layer; After cutting the transparent tape with the transparent conductive film, it is pressed onto the surface of the functional structure substrate to form a transparent electrode located on the side of the light-emitting layer away from the bottom electrode, thus obtaining an optoelectronic device.
[0006] In some embodiments, the transparent tape is a pressure-sensitive tape.
[0007] In some embodiments, the transparent tape includes at least: a substrate layer and an adhesive layer, wherein the adhesive layer has an adhesive surface on the side facing away from the substrate layer; The substrate layer is made of one or more of the following materials: polyimide (PI), polyethylene terephthalate (PET), polyvinyl chloride (PVC), and biaxially oriented polypropylene (BOPP). The adhesive layer is made of one of the following materials: acrylic pressure-sensitive adhesive, rubber pressure-sensitive adhesive, silicone pressure-sensitive adhesive, or polyurethane pressure-sensitive adhesive.
[0008] In some embodiments, the thickness of the substrate layer is greater than or equal to 20 μm and less than or equal to 500 μm.
[0009] In some embodiments, after the transparent tape is fixed to the platform, the method further includes: The platform is heated to a first temperature, which is greater than or equal to 40°C and less than or equal to 60°C.
[0010] In some embodiments, after applying the conductive solution to the adhesive surface of the transparent tape, the method includes: The thin film formed by the conductive solution is annealed and dried to obtain the transparent conductive thin film.
[0011] In some embodiments, the transparent tape includes at least a substrate layer and an adhesive layer; after cutting the transparent tape with the transparent conductive film and pressing it onto the surface of the functional structure substrate, the method further includes: An encapsulation layer is prepared on the surface of the substrate layer facing away from the adhesive layer.
[0012] In some embodiments, the conductive solution is one of the following: Alcohol-based or water-based dispersions of silver or copper nanowires; Aqueous dispersion of poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)PEDOT:PSS; Conductive paste for printing metal meshes comprises metal micro / nano particles, an organic carrier, and a binder, wherein the metal micro / nano particles are silver, copper, nickel, silver alloy, copper alloy, or nickel alloy. Aqueous or organic solvent-based dispersions of graphene oxide or carbon nanotubes.
[0013] The second aspect of this application provides an optoelectronic device, which is prepared by the preparation method described in the first aspect of this application.
[0014] A third aspect of this application provides a display device, the display device comprising: an optoelectronic device prepared by the preparation method described in the first aspect of this application.
[0015] In the embodiments of this application, a transparent conductive film is prepared by coating a conductive solution onto a transparent tape. Then, a dry transfer method is used to directly press the transparent tape onto the surface of the light-emitting layer of the functional structure substrate, forming a transparent electrode located above the light-emitting layer. This method of preparing the top electrode using dry transfer ensures that all processes involving potentially corrosive solvents are completed on a separate tape. After the film dries and cures to form a stable electrode, it is then physically pressed onto the device. This avoids the adverse effects of solution-based electrode preparation on optoelectronic devices (the corrosiveness of solvents, mechanical stress during coating, and volume shrinkage during drying, etc.), completely eliminating chemical damage to the light-emitting layer during the top electrode preparation process, thereby significantly improving the yield and performance of optoelectronic devices. Furthermore, the transparent tape can serve as an encapsulation layer above the top electrode, isolating it from water and oxygen. Therefore, after completing the dry transfer, it is not necessary to remove the tape material above the top electrode, making the process easier to control and implement.
[0016] The above description is only an overview of the technical solution of this application. In order to better understand the technical means of this application and to implement it in accordance with the contents of the specification, and to make the above and other objects, features and advantages of this application more obvious and understandable, the following are specific embodiments of this application. Attached Figure Description
[0017] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the accompanying drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. It should be noted that the scale in the drawings is for illustration only and does not represent the actual scale.
[0018] Figure 1 This is a flowchart of the steps of a method for fabricating an optoelectronic device according to an embodiment of this application; Figure 2 This is a schematic diagram of the film structure of an optoelectronic device proposed in the embodiments of this application; Figure 3 This is a comparative diagram of transmittance proposed in the embodiments of this application; Figure 4 This is a schematic diagram of the average sheet resistance of a top electrode proposed in an embodiment of this application; Reference numerals: 1. Transparent tape; 2. Top electrode; 3. Electron transport layer; 4. Light-emitting layer; 5. Hole transport layer; 6. Hole injection layer; 7. Bottom electrode. Detailed Implementation
[0019] The embodiments of this application will now be described in detail. Examples of these embodiments are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.
[0020] The terms "first" and "second" in the specification and claims of this application may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise stated, "multiple" means two or more. Furthermore, "and / or" in the specification and claims indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and following objects are in an "or" relationship.
[0021] In the description of this application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0022] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0023] In the field of modern optoelectronics, transparent flexible top electrodes play an indispensable role as a key component in many emerging optoelectronic devices. From organic / quantum dot light-emitting diodes (OLEDs / QLEDs) to solar cells (OSCs), the performance of transparent flexible top electrodes directly affects the overall efficiency, stability, and reliability of the devices. With the rapid development of wearable devices, flexible display technologies, and portable energy harvesting systems, the demand for transparent flexible top electrodes is increasing, and the requirements for their performance are becoming increasingly stringent.
[0024] Solution-based methods, as a simple, flexible, and mass-production-ready electrode fabrication technique, have been widely used in the preparation of transparent electrodes. This method typically involves dissolving or dispersing a conductive material in a suitable solvent, then coating the solution onto a substrate using processes such as spin coating, dip coating, or spray coating. Subsequent treatments (such as drying and annealing) then form a conductive thin-film electrode. However, despite the numerous advantages of solution-based methods, in practical applications, the fabrication of the top electrode using this method can cause varying degrees of damage to the underlying film layer. This problem severely restricts the performance improvement and practical application of devices.
[0025] In optoelectronic devices, the film layer beneath the top electrode typically includes key functional layers such as electron transport layers, hole transport layers, light-emitting layers, or photoactive layers. These layers perform crucial functions such as charge transport and energy conversion, and their structural and performance integrity is essential for the normal operation of the device. However, factors during solution-based electrode fabrication, such as the corrosiveness of the solvent, mechanical stress during coating, and volume shrinkage during drying, can damage the underlying film layer. For example, the corrosiveness of the solvent may disrupt the chemical bonds of the underlying film layer, leading to changes in its physical and chemical properties. Some highly polar or corrosive solvents may dissolve or swell the organic components in the underlying film layer, causing problems such as pores, cracks, or peeling. Furthermore, during electrode solution coating, excessively rapid coating speed or improper interaction between the substrate and the solution can generate significant mechanical stress, causing deformation, cracking, or even detachment of the underlying film layer. Simultaneously, during drying, solvent evaporation in the electrode solution leads to volume shrinkage; if this shrinkage exceeds the underlying film layer's tolerance, it can also cause damage.
[0026] These issues with the underlying film layer damage caused by solution-based electrode fabrication can lead to a series of serious consequences. First, film layer damage may disrupt the electrical continuity within the device, causing problems such as current leakage or short circuits, affecting the normal operation of the device. Second, film layer damage can introduce defects within the device, increasing the probability of charge recombination and thus reducing the device's photoelectric conversion efficiency. Furthermore, film layer damage may also reduce the stability and reliability of the device, shortening its lifespan.
[0027] To address the aforementioned issues, this application proposes a dry transfer electrode fabrication method that avoids solution damage to the underlying film layer, namely, a method and product for fabricating optoelectronic devices based on dry transfer printing. In this application, a transparent conductive film is prepared by coating a conductive solution onto a transparent tape. Then, using dry transfer printing, the transparent tape is directly pressed onto the surface of the light-emitting layer of the functional structure substrate, forming a transparent electrode located above the light-emitting layer. This method of fabricating the top electrode using dry transfer printing ensures that all processes potentially involving corrosive solvents are completed on a separate tape. After the film dries and cures to form a stable electrode, it is then physically pressed onto the device. This avoids the adverse effects of solution-based electrode fabrication on optoelectronic devices (the corrosiveness of solvents, mechanical stress during coating, and volume shrinkage during drying, etc.), completely eliminating chemical damage to the light-emitting layer during the top electrode fabrication process, thereby significantly improving the fabrication yield and performance of optoelectronic devices.
[0028] The first aspect of this application provides a method for fabricating optoelectronic devices based on dry transfer printing, referring to... Figure 1 , Figure 1 A flowchart illustrating the steps of a method for fabricating an optoelectronic device is shown, as follows: Figure 1 As shown, the method includes: Step S101: Fix the transparent tape to the platform, with the adhesive side of the transparent tape facing away from the platform; One side of the transparent tape is the adhesive side of the adhesive layer, and the other side is the substrate side of the substrate layer (i.e., non-adhesive). In this step, the substrate side of the transparent tape is in contact with the platform, with the adhesive side facing away from the platform and facing upwards. For example, transparent pressure-sensitive tape is fixed to the flat surface with the pressure-sensitive adhesive side facing upwards.
[0029] Step S102: The conductive solution is applied to the adhesive surface of the transparent tape by spin coating, spraying or scraping to obtain a transparent conductive film. Specifically, the electrode solution is coated onto the transparent tape prepared in step S101 by any one of the following methods: scraping, inkjet printing, spin coating, drop coating, or spray coating, to obtain a transparent conductive film with uniform conductivity.
[0030] In some embodiments, after applying the conductive solution to the adhesive surface of the transparent tape, the method includes: The transparent conductive film is obtained by annealing and drying the thin film formed by the conductive solution. Specifically, a transparent electrode is pre-prepared on a pressure-sensitive adhesive tape, annealed and dried, and then transferred to the surface of the light-emitting device, avoiding damage to the underlying film layer of the device during solution-based top electrode fabrication. Annealing is commonly referred to as welding or sintering. For electrode materials such as metal nanowires (AgNWs, CuNWs), in the dried nanowire film, the nanowires are only physically overlapped, resulting in a large contact resistance. Through annealing, atoms at the intersections of the nanowires gain energy and diffuse, thereby forming a strong ohmic contact with better conductivity. This is crucial for obtaining a conductive film with low sheet resistance. For electrode materials such as metal meshes, the metal mesh slurry contains metal micro / nanoparticles, organic solvents, binders, etc. The purpose of annealing is to: sinter the metal particles to connect them into continuous conductive lines; and decompose and volatilize the organic carrier to prevent it from becoming an insulating impurity. For carbon-based electrode materials (graphene, carbon nanotubes), high-temperature treatment removes oxygen-containing functional groups, residual solvent molecules, and dispersants, thereby improving conductivity. For conductive polymer (PEDOT:PSS) electrode materials, annealing removes water molecules and induces phase separation and rearrangement of the PEDOT and PSS molecular chains. During annealing, insulating PSS migrates outward from the conductive PEDOT-rich regions, forming a more efficient conductive pathway and significantly improving the film's conductivity. The annealing process varies depending on the conductive solution; therefore, this embodiment does not limit the specific process parameters such as annealing time and temperature.
[0031] Step S103: Prepare a functional structure substrate, which includes, in sequence, a substrate, a bottom electrode, and a light-emitting layer. In this embodiment, step S103 may be performed before or simultaneously with steps S101 and S102.
[0032] Specifically, refer to Figure 2 , Figure 2 A schematic diagram of the film structure of an optoelectronic device is shown, as follows. Figure 2 As shown, the optoelectronic device prepared by the method proposed in this application includes: a transparent tape 1, a top electrode 2, an electron transport layer 3, a light-emitting layer 4, a hole transport layer 5, a hole injection layer 6, and a bottom electrode, stacked sequentially. The transparent tape 1 serves to encapsulate and isolate water and oxygen. It should be noted that... Figure 2 The film structure of the optoelectronic device shown is only an example. Other film structures may also be included in the optoelectronic device. For example, a substrate is provided on the side of the bottom electrode 7 away from the hole injection layer 6, and other encapsulation layers, glass covers, etc. may be provided on the side of the transparent tape 1 away from the top electrode 2.
[0033] Step S104: After cutting the transparent tape with the transparent conductive film, press it onto the surface of the functional structure substrate to form a transparent electrode located on the side of the light-emitting layer away from the bottom electrode, thereby obtaining an optoelectronic device.
[0034] The transparent tape with the transparent conductive film prepared in step S102 is cut to a suitable size and shape (i.e., the shape required for the top electrode) and pressed onto the surface of the optoelectronic device (the surface of the functional structure substrate near the light-emitting layer). Specifically, other functional film layers, such as an electron transport layer, may be disposed between the light-emitting layer and the top electrode, or an electron injection layer may be disposed between the electron transport layer and the top electrode. Therefore, in the step of pressing the transparent tape, the transparent conductive film can contact the surface of the electron injection layer. Rolling removes air bubbles, thereby fixing the transparent conductive film on the side of the light-emitting layer away from the bottom electrode, forming the top electrode. Simultaneously, the transparent tape does not need to be peeled off; the substrate layer of the transparent tape has a certain water and oxygen barrier effect, which can help increase the stability of the device.
[0035] In this embodiment, the optoelectronic device can be a light-emitting device (organic light-emitting diode, micro light-emitting diode, etc.) that emits light using a transparent top electrode; it can be a photovoltaic device (e.g., organic solar cell) that collects light and conducts current using a transparent top electrode; or it can be a photodetector and sensor (e.g., photodetector) that uses a transparent top electrode as a light-transmitting contact electrode for detecting light signals or forming a sensing interface. In this embodiment, the specific type of optoelectronic device is not limited.
[0036] The transparent flexible top electrode based on dry transfer using transparent tape provided in this application is pre-prepared on the tape and then transferred to the surface of the target device via tape contact. This avoids solvent penetration, swelling, or dissolution problems encountered in solution-based preparation processes, protecting the low solvent-resistant functional layer in the device. Furthermore, conductive materials may be embedded in the underlying soft layer during direct spin coating or spraying. The preparation method proposed in this application avoids leakage or short circuits caused by the nanostructure scratching the underlying functional layer during spin coating or spraying. Moreover, after the conductive film is dry-transferred to the target device surface, the tape substrate does not need to be peeled off, possessing the ability to isolate water and oxygen, thus protecting the device surface and increasing device stability.
[0037] In some embodiments, the transparent tape is a pressure-sensitive tape.
[0038] Given the crucial role of transparent top electrodes in fully transparent and top-emitting devices, traditional thin-layer metal and transparent conductive oxide electrode fabrication processes suffer from high equipment requirements and high costs. In contrast, solution methods offer significant advantages such as low cost, low equipment requirements, and large-scale production capability. However, current solution-based top electrode fabrication methods can damage the underlying film layer of the device, primarily due to solvent erosion. Based on these characteristics, this application proposes a transparent top electrode for optoelectronic devices based on pressure-sensitive adhesive tape dry transfer: the electrode is pre-fabricated on a transparent pressure-sensitive adhesive tape and then transferred to the surface of the target device (such as the surface of a functional structure substrate). This electrode ensures that the functional layer (such as the light-emitting layer) of the light-emitting device or other optoelectronic devices remains completely free from contact with any solvent throughout the process, fundamentally solving the problems of solvent penetration, swelling, or dissolution of the underlying film layer during solution-based electrode fabrication. The transparent flexible top electrode for optoelectronic devices based on pressure-sensitive adhesive tape dry transfer has a simple structure, low processing cost, and can be mass-produced, making it flexibly applicable to various optoelectronic devices. This new type of transparent flexible top electrode can be used in both the light-emitting display field and the solar cell field. Due to the wide selection of pressure-sensitive tapes, it can be used in flexible and stretchable fields.
[0039] In some embodiments, the transparent tape includes at least a substrate layer and an adhesive layer, wherein the adhesive layer has an adhesive surface on the side facing away from the substrate layer; wherein the substrate layer may be a transparent flexible substrate. The substrate layer is made of one or more of the following materials: polyimide (PI), polyethylene terephthalate (PET), polyvinyl chloride (PVC), and biaxially oriented polypropylene (BOPP). The adhesive layer is made of one of the following materials: acrylic pressure-sensitive adhesive, rubber pressure-sensitive adhesive, silicone pressure-sensitive adhesive, or polyurethane pressure-sensitive adhesive. In other words, the adhesive layer (i.e., the pressure-sensitive adhesive) is made of materials including: acrylic copolymers, natural rubber and tack resins, MQ resin and silicone rubber, polyols and diisocyanates, or other common pressure-sensitive adhesives.
[0040] In some embodiments, the thickness of the substrate layer is greater than or equal to 20 μm and less than or equal to 500 μm.
[0041] In this embodiment, the substrate layer of the transparent tape can serve as an encapsulation layer for the optoelectronic device, acting as a barrier against water and oxygen. This eliminates the need to remove the transparent tape after obtaining the top electrode film structure via dry transfer, simplifying the manufacturing process. Therefore, in this embodiment, the thickness of the transparent tape, particularly the substrate layer, needs to be controlled. The thickness of the substrate layer must be less than or equal to the thickness of a typical optoelectronic device encapsulation layer. The substrate layer can serve as a resin encapsulation layer. Referring to the typical thickness range of numerical encapsulation layers (20μm-500μm), the thickness of the substrate layer is set to be greater than or equal to 20μm and less than or equal to 500μm.
[0042] In some embodiments, after the transparent tape is fixed to the platform, the method further includes: The platform is heated to a first temperature, which is greater than or equal to 40°C and less than or equal to 60°C.
[0043] Specifically, the initial temperature is determined by the material (conductive solution) used in the preparation of the top electrode. For example, if the conductive solution is an AgNWs solution, the initial temperature can be 50 °C. It's important to note that some PEDOT:PSS formulations with specific dopants and precise requirements for thermal annealing do not need to be heated to excessively high temperatures. Conductive solutions are typically dispersed in solvents (such as water, ethanol, etc.). At room temperature, the solution may have high viscosity and surface tension. Heating to the initial temperature effectively reduces the viscosity of the solution, making it easier to spread and level during coating. Furthermore, moderate heating accelerates the evaporation of the solvent, allowing the conductive solution to quickly adhere to the adhesive layer surface of the tape, forming a continuous and efficient conductive network.
[0044] In some embodiments, the transparent tape includes at least a substrate layer and an adhesive layer; after cutting the transparent tape with the transparent conductive film and pressing it onto the surface of the functional structure substrate, the method further includes: An encapsulation layer is prepared on the surface of the substrate layer facing away from the adhesive layer.
[0045] The transparent flexible electrode is formed by fabricating a conductive material on a transparent pressure-sensitive adhesive tape substrate and then adhering it to the device surface using pressure-sensitive adhesive on the tape surface. The transparent conductive film is pre-prepared on the tape, avoiding solvent penetration, swelling, or dissolution issues common in solution-based fabrication processes, thus protecting the low-solvent-resistant functional layers in the device. Simultaneously, the tape substrate does not need to be peeled off and can serve as an encapsulation layer or part of an encapsulation layer to prevent water and oxygen corrosion of the device, increasing device stability. An encapsulation layer is further fabricated on one side of the transparent tape (the side of the substrate layer facing away from the adhesive layer, i.e., the non-adhesive substrate side). The substrate layer and encapsulation layer of the transparent tape together provide encapsulation.
[0046] In some embodiments, the conductive solution is one of the following: Alcohol-based or water-based dispersions of silver or copper nanowires; Aqueous dispersion of poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate)PEDOT:PSS; Conductive paste for printing metal meshes comprises metal micro / nano particles, an organic carrier, and a binder, wherein the metal micro / nano particles are silver, copper, nickel, silver alloy, copper alloy, or nickel alloy. Aqueous or organic solvent-based dispersions of graphene oxide or carbon nanotubes.
[0047] Different conductive solutions result in different top electrodes. Corresponding to the conductive materials mentioned above, the materials used for transparent top electrodes include: silver nanowires (AgNWs), copper nanowires (CuNWs), graphene, PEDOT:PSS, metal mesh, carbon nanotubes, or any one of other common transparent electrode materials.
[0048] In some embodiments, step S103 (preparing the functional structure substrate) includes the following steps: S103-1. The transparent substrate with the bottom electrode is immersed in the washing solution, deionized water and anhydrous ethanol respectively for ultrasonic cleaning to remove organic matter and dust from the transparent substrate. In some embodiments, the transparent substrate is a rigid substrate or a flexible substrate; the rigid substrate can be glass, silicon dioxide, or quartz; the flexible substrate can be polyethylene terephthalate, polyethylene naphthalate, or polyimide. In specific implementations, cleaning the transparent substrate through the above steps can effectively remove organic matter, impurities, etc., from the substrate surface. In some embodiments, the substrate with the bottom electrode is a rigid substrate or a flexible substrate; wherein, the rigid substrate includes any one of glass, silicon dioxide or quartz, and the flexible substrate includes any one of polyethylene terephthalate, polyethylene naphthalate or polyimide; the material used for the bottom electrode is any one of indium tin oxide (ITO), silver (Ag), AgNWs, CuNWs, graphene, PEDOT:PSS, metal mesh, carbon nanotubes or other common electrode materials.
[0049] S103-2. After ultrasonic cleaning, the substrate is dried with nitrogen to remove residual organic solvents and dust. S103-3. Functional layers such as hole injection layer, hole transport layer, light emission layer and electron transport layer are sequentially prepared on the cleaned substrate (i.e., on the side of the bottom electrode facing away from the substrate).
[0050] In some embodiments, the hole injection layer uses materials including: PEDOT:PSS, molybdenum trioxide (MoO3) nanoparticles, and any of other common hole injection layer materials; the hole transport layer uses materials including: poly(9,9-dioctylfluorene-co-N-(4-butylphenyl)-diphenylamine)TFB, poly(9,9-dioctylfluorene-co-benzimidazole)PF8Cz, polyvinylcarbazole (PVK), and any of other common hole transport layer materials; the light-emitting layer uses materials including: cadmium selenide / zinc sulfide core-shell CdSe / ZnS quantum dots (ZnS shell encapsulating CdSe core), cadmium selenide / zinc selenide core-shell CdSe / ZnSe quantum dots (ZnSe shell material), indium phosphide / zinc sulfide core-shell InP / ZnS quantum dots, and any of other common light-emitting materials; the electron transport layer uses materials including: zinc magnesium oxide (ZnMgO), zinc oxide (ZnO), and zinc tin oxide (ZnSnO). It is one of the common electron transport layer materials, such as tin dioxide (SnO2) and others.
[0051] Specific experimental steps or conditions are not specified in the examples; however, they can be performed according to the conventional experimental steps or conditions described in the prior art. Reagents and other instruments used, unless otherwise specified, are all commercially available conventional reagent products.
[0052] The method proposed in this application will be specifically described below through an embodiment 1.
[0053] Example 1 In Example 1, the optoelectronic device is a quantum dot light-emitting device, the transparent tape is a transparent pressure-sensitive tape, and the prepared top electrode is a transparent AgNWs top electrode. The method is as follows: Step 1: Fix the PI pressure-sensitive tape onto the coating platform with the pressure-sensitive adhesive side facing up, and heat the platform to 50 ℃; Step 2: The AgNWs solution is coated onto the transparent pressure-sensitive tape prepared in Step 1 to obtain a transparent conductive film, and then annealed and dried. The concentration of the AgNWs solution is 2.5 mg / ml, the scraper speed is 5 mm / s, and the annealing time is 2 min. Step 3: Cut the transparent pressure-sensitive tape with a transparent conductive film prepared in Step 2 into a suitable electrode shape, press it onto the surface of the target light-emitting device, roll it to remove air bubbles, and obtain the light-emitting device.
[0054] The method for fabricating the light-emitting device mentioned in step three includes the following steps: Step 1: Immerse the substrate with the bottom electrode in the film washing solution, deionized water and anhydrous ethanol respectively for ultrasonic cleaning to remove organic matter and dust from the transparent substrate; Step 2: After ultrasonic cleaning, the substrate is dried with nitrogen to remove residual organic solvents and dust. Step 3: The hole injection layer PEDOT:PSS, the hole transport layer PF8Cz, the light-emitting layer CdSe / ZnS quantum dots, and the electron transport layer ZnO are sequentially spin-coated onto the cleaned substrate. Reference Figure 3 , Figure 3 A schematic diagram showing a comparison of transmittance is provided, such as... Figure 3 As shown, the horizontal axis represents wavelength (in nm), and the vertical axis represents transmittance. The solid line curve represents the transmittance of the glass substrate, and the dashed line curve represents the transmittance of the light-emitting device with the transparent flexible top electrode obtained in Example 1. It can be seen that the overall transmittance of the light-emitting device with the transparent electrode prepared in Example 1 is not significantly different from that of the glass substrate, and the overall transmittance of the light-emitting device is around 90% in the visible light range. (Refer to...) Figure 4 , Figure 4 A schematic diagram of the average sheet resistance of a top electrode is shown, such as... Figure 4 As shown, the transparent flexible top electrode prepared in Example 1, measuring 2 cm × 2 cm, was divided into four equal parts, and the sheet resistance of each part was measured to obtain the following results: Figure 4 The sheet resistance (in Ω / sq) of each area is shown. It can be seen that the sheet resistance of the transparent flexible top electrode within a 2 cm × 2 cm area is 19.2 Ω / sq, 21.5 Ω / sq, 22.5 Ω / sq, and 19.3 Ω / sq, respectively, exhibiting uniform size and good conductivity. Therefore, by fabricating transparent top electrodes (transmittance ≥80%, sheet resistance ≤50 Ω / sq) using a solution method on pressure-sensitive adhesive tape, high-performance operation of optoelectronic devices can be achieved.
[0055] The second aspect of this application provides an optoelectronic device, which is prepared by the preparation method described in the first aspect of this application.
[0056] Specifically, the film structure of optoelectronic devices can be as follows: Figure 2 As shown, it includes: a transparent tape 1, a top electrode 2, an electron transport layer 3, a light-emitting layer 4, a hole transport layer 5, a hole injection layer 6, and a bottom electrode, stacked sequentially. The transparent tape 1 serves to encapsulate and isolate water and oxygen. It should be noted that... Figure 2 The film structure of the optoelectronic device shown is only an example. Other film structures may also be included in the optoelectronic device. For example, a substrate is provided on the side of the bottom electrode 7 away from the hole injection layer 6, and other encapsulation layers, glass covers, etc. may be provided on the side of the transparent tape 1 away from the top electrode 2.
[0057] In the embodiments of this application, the optoelectronic device can be a light-emitting device (organic light-emitting diode, micro light-emitting diode, etc.) that emits light using a transparent top electrode; it can be a photovoltaic device (e.g., organic solar cell) that collects light and conducts current using a transparent top electrode; or it can be a photodetector and sensor device (e.g., photodetector) that uses a transparent top electrode as a light-transmitting contact electrode for detecting light signals or forming a sensing interface. In the embodiments of this application, the specific type of optoelectronic device is not limited.
[0058] A third aspect of this application provides a display device, the display device comprising: an optoelectronic device prepared by the preparation method described in the first aspect of this application.
[0059] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. The same or similar parts between the various embodiments can be referred to each other.
[0060] Finally, it should be noted that in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.
[0061] The above provides a detailed description of the method and product for fabricating optoelectronic devices based on dry transfer printing provided in this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the method and core ideas of this application. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the ideas of this application. Therefore, the content of this specification should not be construed as a limitation of this application.
[0062] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this application are indicated by the following claims.
[0063] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The scope of this application is limited only by the appended claims.
[0064] The terms "an embodiment," "embodiment," or "one or more embodiments" as used herein mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment of this application. Furthermore, please note that the examples of the phrase "in one embodiment" do not necessarily all refer to the same embodiment.
[0065] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.
[0066] In the claims, any reference signs placed between parentheses should not be construed as limiting the claims. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. This application can be implemented by means of hardware comprising several different elements and by means of a suitably programmed computer. In a unit claim enumerating several means, several of these means may be embodied by the same item of hardware. The use of the words first, second, and third, etc., does not indicate any order. These words can be interpreted as names.
[0067] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.
Claims
1. A method for fabricating an optoelectronic device based on dry transfer printing, characterized in that, The method comprises: fixing a transparent tape on a platform, and the adhesive surface of the transparent tape faces away from the platform; coating an electrically conductive solution on the adhesive surface of the transparent tape by spin coating, spray coating or blade coating to obtain a transparent conductive film; preparing a functional structure substrate, which comprises a substrate, a bottom electrode and a light-emitting layer stacked in sequence; cutting the transparent tape with the transparent conductive film and laminating it on the surface of the functional structure substrate to form a transparent electrode on the side of the light-emitting layer away from the bottom electrode, thereby obtaining a photoelectric device.
2. The method of claim 1, wherein the method further comprises: The transparent tape is a pressure-sensitive tape.
3. The method of claim 2, wherein the step of depositing the photoactive layer is performed by a method selected from the group consisting of: spin coating, dip coating, spray coating, and inkjet printing. The transparent tape at least comprises a substrate layer and an adhesive layer, and the surface of the adhesive layer away from the substrate layer is the adhesive surface; The material used in the substrate layer is one or more of polyimide (PI), polyethylene terephthalate (PET), polyvinyl chloride (PVC) and biaxially oriented polypropylene (BOPP). The material used in the adhesive layer is one of acrylate pressure-sensitive adhesive material, rubber pressure-sensitive adhesive material, silicone pressure-sensitive adhesive material and polyurethane pressure-sensitive adhesive material.
4. The method of claim 3, wherein the step of depositing the photoelectric material is performed by a method selected from the group consisting of sputtering, vacuum deposition, and chemical vapor deposition. The thickness of the substrate layer is greater than or equal to 20 μm and less than or equal to 500 μm.
5. The method of claim 1, wherein the method further comprises: After fixing the transparent tape on the platform, the method further comprises: heating the platform to a first temperature, which is greater than or equal to 40 ℃ and less than or equal to 60 ℃.
6. The method of claim 1, wherein the method further comprises: After coating the electrically conductive solution on the adhesive surface of the transparent tape, the method comprises: annealing and drying the film formed by the electrically conductive solution to obtain the transparent conductive film.
7. The method of claim 1, wherein the method further comprises: The transparent tape at least comprises a substrate layer and an adhesive layer; after cutting the transparent tape with the transparent conductive film and laminating it on the surface of the functional structure substrate, the method further comprises: preparing an encapsulation layer on the surface of the substrate layer away from the adhesive layer.
8. The method of claim 1, wherein the method further comprises: The electrically conductive solution is one of: alcohol-based or water-based dispersion of silver nanowires or copper nanowires; water dispersion of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS); conductive paste for printing metal grid, comprising metal micro-nano particles, organic carrier and binder, wherein the metal micro-nano particles are silver, copper, nickel, silver alloy, copper alloy or nickel alloy; water-based or organic solvent-based dispersion of graphene oxide or carbon nanotubes.
9. An optoelectronic device, characterized in that The photoelectric device is prepared by the preparation method of any one of claims 1-8.
10. A display device, characterized by comprising: The display device comprises the photoelectric device prepared by the preparation method of any one of claims 1-8.