Manufacturing method of glass-based packaging carrier plate and glass-based packaging carrier plate

Abstract

The invention relates to a manufacturing method of a glass-based packaging carrier plate and the glass-based packaging carrier plate, and the manufacturing method comprises the following steps: providing a temporary carrier plate and a growth template arranged on the temporary carrier plate, forming a growth through hole penetrating to the surface of the temporary carrier plate in the growth template, and arranging a conductive metal substrate on the surface, located in the growth through hole, of the temporary carrier plate; carrying out metal filling on the growth through holes by adopting an electroplating method so as to enable the growth through holes to form conductive metal columns; removing the growth template; the side, provided with the conductive metal columns, of the temporary carrier plate is coated with glass powder to form a glass powder layer; curing the glass powder layer to form a glass substrate; removing the temporary support plate; and exposing two ends of the conductive metal column on the surface of the glass substrate. In the electroplating process, the growth through holes in the growth template can be filled with the conductive metal substrate without defects, so that the defects such as holes or bubbles in the formed conductive metal columns are reduced, and finally, the formed glass-based packaging support plate has excellent conductivity.

Description

Technical Field

[0001] This application relates to the field of encapsulation substrate technology, and in particular to a method for manufacturing a glass-based encapsulation substrate and the glass-based encapsulation substrate itself. Background Technology

[0002] Through-Glass Via (TGV) technology, as a key technology for next-generation advanced packaging, has excellent high-frequency electrical characteristics and strong mechanical stability, and has great application prospects in fields such as radio frequency devices, microelectromechanical systems, and optoelectronic system integration.

[0003] However, for high-end glass substrates, when the depth-to-diameter ratio (the ratio of hole depth to hole diameter) of the glass via reaches 10:1 or higher, it is difficult for the metal to enter the hole when depositing titanium or copper seed layers using physical vapor deposition (PVD) technology, especially in the middle part of the hole. This can easily lead to defects such as uneven filling, voids, or bubbles after electroplating, which will affect the conductivity of the TGV and thus the function of the packaging system. Summary of the Invention

[0004] Therefore, it is necessary to provide a method for manufacturing a glass-based encapsulation substrate and a glass-based encapsulation substrate to address the problem that metal is difficult to enter the hole when depositing titanium or copper seed layers using physical vapor deposition (PVD) technology when the depth-to-diameter ratio (the ratio of hole depth to hole diameter) of glass vias reaches 10:1 or above.

[0005] A method for manufacturing a glass-based encapsulation substrate, the method comprising:

[0006] A temporary carrier plate and a growth template disposed on the temporary carrier plate are provided. The growth template has a growth through hole extending to the surface of the temporary carrier plate. A conductive metal substrate is disposed on the surface of the temporary carrier plate located within the growth through hole.

[0007] The grown through-holes are filled with metal using an electroplating method, thereby forming conductive metal pillars in the grown through-holes;

[0008] Remove the growth template;

[0009] Glass powder is applied to the side of the temporary carrier plate with the conductive metal pillar to form a glass powder layer;

[0010] The glass powder layer is cured to form a glass substrate;

[0011] Remove the temporary carrier plate;

[0012] The two ends of the conductive metal pillar are exposed on the surface of the glass substrate.

[0013] In one embodiment, the growth template is a photoresist layer disposed on the surface of the temporary carrier.

[0014] In one embodiment, the step of providing a temporary carrier plate and a growth template disposed on the temporary carrier plate specifically includes:

[0015] A temporary carrier plate is provided, and a conductive metal substrate is disposed on one side of the surface of the temporary carrier plate, the conductive metal substrate covering the surface of the temporary carrier plate;

[0016] Photoresist is applied to the side of the conductive metal substrate away from the temporary carrier to form the photoresist layer;

[0017] Exposure and development are used to create through-holes in the photoresist layer.

[0018] In one embodiment, the conductive metal substrate is bonded to the temporary carrier plate by a temporary bonding adhesive.

[0019] In one embodiment, removing the temporary carrier plate specifically includes:

[0020] The temporary carrier plate is separated from the conductive metal substrate by heating or ultraviolet irradiation.

[0021] In one embodiment, exposing both ends of the conductive metal pillar to the surface of the glass substrate specifically includes:

[0022] The glass substrate is ground to remove the conductive metal substrate, so that both ends of the conductive metal pillar are exposed on the surface of the glass substrate.

[0023] In one embodiment, the thickness of the conductive metal substrate is between 1 μm and 10 μm.

[0024] In one embodiment, the hardening of the glass powder layer to form a glass substrate specifically includes:

[0025] The glass powder layer is pre-baked, desinated, and cured and sintered to form a sintered glass layer;

[0026] A linear laser beam is used to laser sinter the sintered glass layer until the sintered glass layer hardens into a glass substrate.

[0027] In one embodiment, the pre-baking temperature is between 100°C and 200°C;

[0028] And / or, the resin removal temperature is between 300°C and 400°C;

[0029] And / or, the curing and sintering temperature is between 400°C and 500°C;

[0030] And / or, the laser sintering is performed using an infrared laser.

[0031] A glass-based encapsulation substrate, wherein the glass-based encapsulation substrate is prepared using the glass-based encapsulation substrate manufacturing method described in any of the preceding claims.

[0032] The aforementioned method for fabricating a glass-based encapsulation substrate involves first preparing conductive metal pillars, and then forming a glass substrate by coating glass powder onto the conductive metal pillars. During the substrate forming process, glass vias are formed simultaneously, with the conductive metal pillars located within the vias. Compared to traditional glass-based encapsulation substrate fabrication methods, which first use laser-induced etching combined with wet chemical etching to form vias, then employ physical vapor deposition (PVD) to form a seed layer within the vias, and finally use the seed layer to form the conductive metal pillars, the method described in this application eliminates the step of forming vias in the glass substrate, thus eliminating the step of forming a seed layer within the vias using PVD technology.

[0033] Because this application eliminates the step of forming a seed layer within the via, problems such as uneven seed layer thickness, discontinuous coverage, or poor adhesion are eliminated. Furthermore, this application uses a conductive metal substrate as the base point for electroplating, enabling defect-free filling of the growth vias within the growth template with the conductive metal substrate during the electroplating process. This reduces defects such as pores or bubbles within the formed conductive metal pillars. The resulting glass-based encapsulation board exhibits excellent conductivity, which can reduce signal transmission loss when applied to packaging systems. This is particularly beneficial for high-frequency and high-speed applications such as 5G / 6G communication and AI computing. Attached Figure Description

[0034] Figure 1 This is a flowchart illustrating a method for fabricating a glass-based encapsulation substrate in some embodiments of this application.

[0035] Figure 2 for Figure 1 The flowchart for step S10.

[0036] Figure 3 for Figure 1 Flowchart of step S50.

[0037] Figure 4 This is a schematic diagram of the structure of the temporary carrier, conductive metal substrate and photoresist layer after step S11 in some embodiments of this application.

[0038] Figure 5 This is a schematic diagram of the structure of the temporary carrier, conductive metal substrate and photoresist layer after step S13 in some embodiments of this application.

[0039] Figure 6 This is a schematic diagram of the structure of the temporary carrier, conductive metal substrate and photoresist layer after step S20 in some embodiments of this application.

[0040] Figure 7 This is a schematic diagram of the structure of the temporary carrier plate and the conductive metal substrate after step S30 in some embodiments of this application.

[0041] Figure 8 This is a schematic diagram of the structure of the temporary carrier plate, conductive metal substrate and glass powder layer after step S40 in some embodiments of this application.

[0042] Figure 9 This is a schematic diagram of the structure of the temporary carrier plate, conductive metal substrate and glass substrate after step S50 in some embodiments of this application.

[0043] Figure 10 This is a schematic diagram of the structure of the conductive metal substrate and the glass substrate after step S60 in some embodiments of this application.

[0044] Figure 11 This is a schematic diagram of the structure of the glass substrate after step S70 in some embodiments of this application.

[0045] Explanation of reference numerals in the attached figures:

[0046] Temporary carrier 10; growth template 11; conductive metal substrate 12; growth via 13; conductive metal pillar 14; glass powder layer 15; glass substrate 16; photoresist layer 17. Detailed Implementation

[0047] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0048] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0049] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0050] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0051] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0052] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0053] Before discussing the fabrication method of the glass-based encapsulation substrate of this application, we will first describe the traditional fabrication method of glass-based encapsulation substrates. Traditional glass-based encapsulation substrates are formed based on glass substrates. In practical applications, borosilicate glass, aluminosilicate glass, or alkali-free aluminoborosilicate glass systems are typically chosen as substrate materials. These materials have advantages such as low dielectric constant, low coefficient of thermal expansion, and high thermal stability, which can meet the requirements of high-frequency signal transmission and chip packaging. Before production, the glass substrate needs to be cleaned and surface-treated to remove impurities and ensure adhesion for subsequent steps. Then, large-size glass raw materials are cut into substrates of specific specifications using cutting equipment, and rough grinding and fine grinding are performed to optimize their flatness and thickness. Chemical agents may be added during the grinding process to improve precision.

[0054] Then, through-holes (i.e., glass vias, TGVs) are formed in the glass substrate. This is usually achieved by laser-induced etching or deep reactive ion etching. Laser-induced etching involves selectively oriented laser modification on the glass substrate to cause a phase transition in a specific area. Then, wet chemical etching (such as hydrofluoric acid solution) is used to etch the modified area. Since the modified glass has a faster etching rate, a high aspect ratio through-hole is formed.

[0055] Since glass is an insulator, it cannot be directly electroplated. Furthermore, due to its extremely smooth and inert surface, glass has poor adhesion to copper, making direct copper deposition prone to detachment. Therefore, a thin conductive metal substrate layer needs to be deposited on the insulating hole wall to serve as the cathode current path for subsequent copper electroplating. This metal layer is called the seed layer.

[0056] Currently, seed layers typically employ physical vapor deposition (PVD) technology. First, a thin metal film with a thickness of only tens to hundreds of nanometers (nm) is deposited on the entire inner wall of the glass via using PVD (usually sputtering) as an adhesive layer. Commonly used materials are titanium (Ti) or chromium (Cr). The adhesive layer can form strong chemical bonds and mechanical interlocks with the smooth glass surface, while also bonding well with the subsequent copper layer, preventing the metallization layer from peeling off or curling due to thermal or mechanical stress during use.

[0057] Above the adhesive layer, a thicker copper (Cu) layer (about 1-2 micrometers) is sputtered by PVD to form a seed layer. This layer provides a continuous conductive path, ensuring that the current can be evenly distributed to the entire inner surface of the via during subsequent electroplating, thereby achieving uniform copper deposition.

[0058] Finally, within the vias containing the seed layer, copper ions are reduced to copper atoms using an electrochemical method, achieving complete bottom-up or defect-free filling. After electroplating, a copper layer much thicker than required covers the surface of the glass substrate. This layer is then completely removed through polishing, exposing the glass surface again and ensuring global planarization of the copper on the top of each glass substrate with the glass surface, thus completing the fabrication of the glass-based encapsulation substrate.

[0059] During the fabrication of the aforementioned glass-based encapsulation substrate, the inventors discovered the following problems in the related technology: The deposition effect of the seed layer directly affects the filling effect of subsequent electroplating. If the seed layer has problems such as uneven thickness, discontinuous coverage, or poor adhesion, the current distribution during electroplating will be severely uneven, which can easily lead to copper preferentially depositing rapidly at the hole opening or where the seed layer is thick, thus prematurely "sealing" the hole and forming unfillable voids or gaps inside the hole. Furthermore, the thin seed layer may peel off under the thermal stress of the electroplating process, ultimately leading to increased interconnect resistance, significantly reduced reliability, or even device failure.

[0060] For high-end glass substrates, when the depth-to-diameter ratio (the ratio of hole depth to hole diameter) of the glass via reaches 10:1 or higher, during the deposition of titanium or copper seed layers using physical vapor deposition (PVD) technology, the metal atoms or clusters sputtered from the target mainly travel in a straight line, making it difficult to effectively cover the middle and bottom sections of the hole wall. This results in the seed layer in this area being too thin, discontinuous, or even completely missing, which in turn affects the filling effect of subsequent electroplating and ultimately affects the conductivity of the TGV, thus impacting the functionality of the packaging system.

[0061] Based on this, see Figure 1 This application provides a method for manufacturing a glass-based encapsulation substrate, comprising the following steps:

[0062] S10: Provide a temporary carrier plate 10 and a growth template 11 disposed on the temporary carrier plate 10, wherein the growth template 11 has a growth through hole 13 extending to the surface of the temporary carrier plate 10, and a conductive metal substrate 12 is disposed on the surface of the temporary carrier plate 10 located in the growth through hole 13.

[0063] S20: The growth through-hole 13 is filled with metal by electroplating, thereby forming a conductive metal pillar 14 in the growth through-hole 13;

[0064] S30: Remove growth template 11;

[0065] S40: Apply glass powder to the side of the temporary carrier plate 10 with the conductive metal pillar 14 to form a glass powder layer 15.

[0066] S50: The glass powder layer 15 is cured to form a glass substrate 16;

[0067] S60: Remove temporary carrier plate 10;

[0068] S70: Expose both ends of the conductive metal pillar 14 to the surface of the glass substrate 16.

[0069] After step S10, the temporary carrier plate 10, the conductive metal substrate 12, and the growth template 11 form the shape as follows: Figure 5 As shown, after step S20, the temporary carrier plate 10, the conductive metal substrate 12, and the growth template 11 form the shape as shown. Figure 6 As shown, the growth via 13 is now filled with conductive metal pillars 14. Specifically, in step S20, metal filling of the growth via 13 refers to using the conductive metal substrate 12 located within the growth via 13 as the base point for electroplating. Through an electrolytic reaction, metal ions gain electrons on the conductive metal substrate 12 and are reduced to elemental metals. Specifically, a temporary carrier plate 10 with a growth template 11 can be immersed in an electrolyte, and the conductive metal substrate 12 can be connected to the negative terminal of a power supply. At the same time, conductive metal balls are placed in the electrolyte and connected to the positive terminal of a power supply.

[0070] When the power supply is connected to DC, the conductive metal ball connected to the positive electrode loses electrons and becomes metal ions, which dissolve in the electrolyte. The metal ions in the solution migrate to the surface of the conductive metal substrate 12, where they gain electrons and are reduced to elemental metal. Furthermore, since the metal ions are deposited within the growth vias 13, the resulting copper atoms are deposited within the growth vias 13 of the growth template 11. The copper deposition process continues until the space within the growth vias 13 is completely filled with the conductive metal substrate 12, ultimately forming the conductive metal pillar 14.

[0071] In step S30, removing the growth template 11 means separating the growth template 11 from the temporary carrier plate 10, retaining the temporary carrier plate 10 and the conductive metal pillars 14 on the temporary carrier plate 10. At this time, the temporary carrier plate 10, the conductive metal substrate 12, and the conductive metal pillars 14 are as follows: Figure 7 As shown.

[0072] In step S40, during the application of glass powder, the glass powder coats the periphery of the conductive metal pillar 14, meaning that the conductive metal pillar 14 is surrounded by glass powder. Figure 8 As shown, this ensures that after step S50, when the glass powder layer 15 forms the glass substrate 16, the conductive metal pillar 14 is located inside the glass substrate 16, and a glass through-hole is directly formed in the glass substrate 16 at the location of the conductive metal pillar 14. Figure 9As shown. Thus, the glass through-hole is formed along with the glass substrate 16 during the forming process. The shape of the glass through-hole is directly determined by the shape of the copper pillar, which in turn is determined by the growth through-hole 13 of the growth template 11. Therefore, the shape of the growth through-hole 13 can be controlled to control the shapes of the copper pillar and the glass through-hole. Optionally, the growth through-hole 13 is a cylinder, and the copper pillar is also a cylinder, so the shape of the glass through-hole is also cylindrical.

[0073] After step S50, the glass substrate 16 has the complete structure required for the glass encapsulation carrier. However, one side of the glass substrate 16 is covered by the temporary carrier 10. Therefore, in step S60, the temporary carrier 10 is removed, leaving the conductive metal pillar 14 inside the glass through-hole. Figure 10 As shown. In step S70, by cutting or grinding, both ends of the conductive metal pillar 14 can be exposed on the surface of the substrate. The glass substrate 16 and the conductive metal pillar 14 located within the glass substrate 16 then form a glass-based encapsulation carrier, as shown. Figure 11 As shown.

[0074] The aforementioned method for fabricating a glass-based encapsulation substrate involves first preparing conductive metal pillars 14, and then forming a glass substrate 16 by coating glass powder onto the conductive metal pillars 14. During the forming process of the glass substrate 16, glass vias are formed simultaneously, and the conductive metal pillars 14 are also located within the glass vias. Compared to the traditional method for fabricating glass-based encapsulation substrates, which involves first forming vias using laser-induced etching combined with wet chemical etching, then forming a seed layer within the vias using physical vapor deposition (PVD) technology, and finally forming the conductive metal pillars 14 using the seed layer, the method of fabricating the glass-based encapsulation substrate in this application eliminates the step of forming vias in the glass substrate 16, thus eliminating the step of forming a seed layer within the vias using PVD technology.

[0075] Because this application eliminates the step of forming a seed layer in the through-hole, there are no problems such as uneven thickness, discontinuous coverage, or poor adhesion of the seed layer. At the same time, this application uses the conductive metal substrate 12 as the base point for electroplating, which can achieve defect-free filling of the growth through-hole 13 in the growth template 11 with the conductive metal substrate 12 during the electroplating process, thereby reducing defects such as holes or bubbles in the formed conductive metal pillars 14. Finally, the formed glass substrate encapsulation board has excellent conductivity. When applied to the packaging system, it can reduce signal transmission loss, which is especially beneficial for high-frequency and high-speed applications, such as 5G / 6G communication and AI computing.

[0076] Optionally, the conductive metal substrate 12 is copper. In other embodiments, the conductive metal substrate 12 may also be other conductive elements such as silver, or an alloy of two or more metals such as copper-zinc alloy or zinc-nickel alloy. In actual use, different conductive metal substrates 12 can be selected according to the requirements, and no limitation is made here.

[0077] In some embodiments of this application, the growth template 11 is a photoresist layer 17 disposed on the surface of the temporary carrier 10. The photoresist layer 17 can transfer the designed conductive metal pillar 14 pattern onto the photoresist through exposure by a photolithography machine and development by chemical solutions. During the development process, the exposed part of the photoresist is dissolved, thereby forming a through hole on the photoresist. This through hole is the growth through hole 13 on the growth template 11.

[0078] In practical applications, photoresist not only enables the formation of complex microstructures with high precision and high aspect ratio at relatively low process costs and in short cycles, but also offers excellent process flexibility and good material compatibility. The vias formed by photoresist through exposure and development feature steep sidewalls and high aspect ratios, making them particularly suitable for the fabrication of microfluidic channels, MEMS sensors, and other devices. Furthermore, the exposure and development process does not rely on expensive electroforming equipment and lengthy processing cycles like metal molds, significantly reducing costs and shortening fabrication time.

[0079] It is understood that in some other embodiments, the growth mold can also be a metal mold such as an aluminum mold. Metal molds have advantages such as high structural strength and good durability. In actual use, the type of growth template 11 can be selected according to the actual preparation requirements, and no limitation is made here.

[0080] To achieve the placement of a conductive metal substrate 12 within the growth via 13, see [reference needed]. Figure 2 In step S10, the step of "providing a temporary carrier plate 10 and a growth template 11 disposed on the temporary carrier plate 10" specifically includes the following steps:

[0081] S11: A temporary carrier plate 10 is provided, and a conductive metal substrate 12 is disposed on one side of the surface of the temporary carrier plate 10, the conductive metal substrate 12 covering the surface of the temporary carrier plate 10.

[0082] S12: Photoresist is applied to the side of the conductive metal substrate 12 away from the temporary carrier 10 to form a photoresist layer 17.

[0083] S13: Through exposure and development, the photoresist layer 17 is used to form growth vias 13.

[0084] In step S11, the conductive metal substrate 12 can be a copper foil, which is bonded to the surface of the temporary carrier 10. The temporary carrier 10, conductive metal substrate 12, and photoresist layer 17 formed in step S11 are as follows: Figure 4 As shown, after steps S12 and S13, after the growth vias 13 are formed on the photoresist layer 17, the temporary carrier 10, the conductive metal substrate 12, and the photoresist layer 17 are as follows: Figure 5 As shown. At this time, part of the conductive metal substrate 12 exposes the bottom of the growth via 13, so that in step S20, copper ions gain electrons on the conductive metal substrate 12 and are reduced to metallic copper, and finally, conductive metal pillars 14 can be grown in the growth via 13.

[0085] By covering the entire surface of the temporary carrier plate 10 with the conductive metal substrate 12, when multiple growth vias 13 are provided on the photoresist layer 17, each growth via 13 can contain the conductive metal substrate 12. This also facilitates the direct connection of the entire conductive metal substrate 12 to the negative terminal of an external power supply during the subsequent electroplating process. The connection method can be to use a metal clamp or elastic probe connected to an external metal power supply, and to make contact with the edge reserved area or back side of the conductive metal substrate 12 through the metal clamp or elastic probe, thereby achieving a conductive connection between the conductive metal substrate 12 and the external power supply.

[0086] It is understood that in some other embodiments, the conductive metal substrate 12 may not cover the entire surface of the temporary carrier plate 10, but may only be provided on the surface of the temporary carrier plate 10 corresponding to the growth via 13. In the subsequent copper electroplating step, a conductive circuit can be provided inside the temporary carrier plate 10. The conductive circuit is connected to the negative terminal of the external power supply on one hand, and to each conductive metal substrate 12 on the temporary carrier plate 10 on the other hand, so that each conductive metal substrate 12 can be connected to the negative terminal of the external power supply.

[0087] In some specific embodiments, the conductive metal substrate 12 and the temporary carrier plate 10 are bonded together with temporary bonding adhesive. This facilitates the separation of the conductive metal substrate 12 from the temporary carrier plate 10 during step S50, while retaining the conductive metal substrate 12 and the conductive metal pillars 14 located on it. Furthermore, when the conductive metal substrate 12 is copper foil, the temporary bonding adhesive facilitates the fixation of the copper foil to the temporary carrier plate 10, saving steps in the fabrication of the glass-based encapsulation carrier plate.

[0088] In other embodiments, a metal film of conductive metal substrate 12 can be deposited on the surface of temporary carrier plate 10 by physical vapor deposition (PVD) or chemical vapor deposition (CVD). Since the surface of temporary carrier plate 10 is planar, a uniform conductive metal substrate 12 can be formed on the surface of temporary carrier plate 10 even by deposition, ensuring the smooth progress of subsequent electroplating process.

[0089] In some specific embodiments, when the conductive metal substrate 12 and the temporary carrier 10 are bonded together by temporary adhesive, step S60 "removing the temporary carrier 10" specifically includes separating the temporary carrier 10 from the conductive metal substrate 12 by heating or UV irradiation. That is, different processes are selected depending on the type of temporary bonding adhesive to separate the temporary carrier 10 from the conductive metal.

[0090] Specifically, when the temporary bonding adhesive is a heat-release adhesive, it can be heated to above its softening temperature, utilizing its thermally reversible properties to bond or separate the temporary carrier 10 from the conductive metal. Alternatively, the thermal decomposition properties of the temporary bonding adhesive can be utilized, allowing it to decompose directly at high temperatures, thereby separating the temporary carrier 10 from the conductive metal.

[0091] When the temporary bonding adhesive is a photosensitive adhesive, it can be ablated or chemically changed by light of a specific wavelength, such as a UV laser, thereby achieving the separation of the temporary carrier 10 from the conductive metal.

[0092] In some embodiments of this application, in order to ensure that the conductive metal pillar 14 is completely located inside the glass substrate 16 and to avoid incomplete glass vias, in step S40, namely "coating glass powder on the side of the temporary carrier plate 10 with the conductive metal pillar 14 to form a glass powder layer 15", the coated glass powder layer 15 will form a circumferential wrap around the conductive metal pillar 14, thereby ensuring that the glass vias formed subsequently can have a complete shape.

[0093] The thickness of the glass powder layer 15 can be the same as the height of the conductive metal pillar 14, so that after the glass powder layer 15 is cured, one end of the conductive metal pillar 14 can be directly formed on the surface of the glass substrate 16. However, in actual use, the thickness of the glass powder layer 15 is difficult to control. Even if the thickness of the glass powder layer 15 is controlled, the thickness of the glass substrate 16 will be different from the thickness of the glass powder layer 15 in the subsequent curing step. This will cause the end face of the conductive metal pillar 14 to be unable to be parallel to the end face of the glass substrate 16, making it difficult to ensure the flatness of the glass substrate packaging carrier surface.

[0094] Meanwhile, on the side of the glass substrate 16 facing the temporary carrier plate 10, after step S60, i.e., after removing the temporary carrier plate 10, the conductive metal pillar 14 is integrated with the conductive metal substrate 12. Therefore, after step S60, there will be problems such as the conductive metal substrate 12 affecting the flatness of the glass substrate packaging carrier plate surface and the conductive metal substrate 12 affecting the conductivity between the conductive metal main body and the external circuit.

[0095] Based on this, in step S40, after coating the conductive metal substrate 12 with glass powder, in addition to controlling the glass powder layer 15 to wrap the conductive metal pillar 14, it is also necessary to ensure that the thickness of the glass powder layer 15 in the first direction is greater than the height of the conductive metal pillar 14, so that after the glass powder layer 15 is cured, the glass substrate 16 can completely wrap the entire conductive metal pillar 14. At this time, one end of the conductive metal pillar 14 is located inside the glass substrate 16, and the other end is connected to the external conductive metal substrate 12.

[0096] Based on this, in step S70, "exposing both ends of the conductive metal pillar 14 to the surface of the glass substrate 16" specifically includes: grinding the glass substrate 16 to remove the conductive metal substrate 12, and exposing both ends of the conductive metal pillar 14 to the surface of the glass substrate 16.

[0097] Specifically, the polishing method is chemical mechanical polishing (CMP), and the polishing targets are the opposite sides of the glass substrate 16. By polishing the side of the glass substrate 16 with the conductive metal substrate 12, the conductive substrate can be removed, allowing the section of the conductive metal pillar 14 connected to the conductive metal substrate 12 to be exposed on the surface of the glass substrate 16. By polishing the side of the glass substrate 16 away from the conductive metal substrate 12, the thickness of the glass substrate 16 can be reduced until the thickness of the glass substrate 16 is the same as the length of the conductive metal pillar 14, so that the other end of the conductive metal pillar 14 can also be exposed on the surface of the glass substrate 16.

[0098] By grinding, not only can the two ends of the conductive metal pillars 14 be exposed on the surface of the glass substrate 16, but the thickness of the glass substrate 16 can also be flexibly controlled to adapt to the packaging requirements of different packaging systems. Specifically, the thickness of the glass substrate 16 can be controlled by adjusting the grinding thickness during the grinding process. In the actual fabrication process, the height of the conductive metal pillars 14 can be controlled by adjusting the electroplating time of the conductive metal to avoid removing too much conductive metal during the grinding process.

[0099] In some specific embodiments, the thickness of the conductive metal substrate 12 is between 1 μm and 10 μm, so that while ensuring the electroplating filling effect, the thickness of the conductive metal substrate 12 is not too thick, which would affect the polishing difficulty of CMP. It is understood that in other embodiments, a cutting method can also be used to expose both ends of the conductive metal pillar 14 on the surface of the glass substrate 16.

[0100] In some embodiments of this application, see [reference] Figure 3 Step S50, "hardening the glass powder layer 15 to form the glass substrate 16", includes:

[0101] S51: Pre-baking, resin removal, and curing sintering of glass powder layer 15 to form a sintered glass layer;

[0102] S52: Use a linear laser beam to laser sinter the sintered glass layer until the sintered glass layer hardens into a glass substrate 16.

[0103] The purpose of pre-baking is to gently remove the liquid binder components from the glass layer, thereby achieving the initial curing and characterization of the glass powder layer 15. After pre-drying, the resin removal stage, also known as the pre-sintering stage, aims to completely remove solid binders such as ethyl cellulose from the slurry through thermal decomposition. The resin removal process leaves an appropriate number of interconnected micropores between the glass powder particles, creating the material conditions for the next step of melting and sintering, while ensuring the density and integrity of the final sintered body. Finally, in the curing and sintering stage, the glass powder treated in the first two steps melts, flows, and densifies at high temperature, ultimately forming a sintered glass layer.

[0104] Laser sintering after the sintered glass layer is mainly to further improve the density and uniformity of the glass substrate 16. Specifically, the laser sintering energy is highly concentrated and can be precisely and locally heated to refine the sintered glass layer, causing it to remelt instantly and become more dense, thereby significantly reducing pores and microcracks.

[0105] The sintered glass layer includes inorganic components such as SiO2, B2O3, and V2O5, as well as organic components such as adhesives (acrylates), solvents (esters), and other additives (hydrogenated castor oil). In practical applications, the coefficient of thermal expansion of the final glass substrate 16 can be adjusted by changing the composition of the glass powder and the adhesive to adapt to the thermal and mechanical properties of different encapsulation materials.

[0106] In some specific embodiments, the pre-baking temperature is between 100℃ and 200℃, the resin removal temperature is between 300℃ and 400℃, the curing and sintering temperature is between 400℃ and 500℃, and the laser sintering is performed using an infrared laser.

[0107] The following combination Figure 5-11 The overall process of fabricating the glass-based encapsulation substrate of this application is described below:

[0108] S11: A temporary carrier plate 10 is provided, and a conductive metal substrate 12 is disposed on one side of the surface of the temporary carrier plate 10, the conductive metal substrate 12 covering the surface of the temporary carrier plate 10.

[0109] S12: Photoresist is applied to the side of the conductive metal substrate 12 away from the temporary carrier 10 to form a photoresist layer 17.

[0110] S13: Through exposure and development, the photoresist layer 17 is formed to grow through-holes 13;

[0111] S20: The through-hole 13 is filled with metal by electroplating until the through-hole 13 forms a conductive metal pillar 14.

[0112] S30: Remove growth template 11;

[0113] S40: Apply glass powder to the side of the temporary carrier plate 10 with the conductive metal pillar 14 to form a glass powder layer 15.

[0114] S51: Pre-baking, resin removal, and curing / sintering of the glass powder layer 15 to form a sintered glass layer.

[0115] S52: Use a linear laser beam to laser sinter the sintered glass layer until the sintered glass layer hardens into a glass substrate 16;

[0116] S60: The temporary carrier plate 10 is separated from the conductive metal substrate 12 by heating or UV irradiation;

[0117] S70: Grind the glass substrate 16 to remove the conductive metal substrate 12 and expose both ends of the conductive metal pillar 14 on the surface of the glass substrate 16.

[0118] The aforementioned method for fabricating a glass-based encapsulation substrate involves first preparing conductive metal pillars 14, and then forming a glass substrate 16 by coating glass powder onto the conductive metal pillars 14. During the forming process of the glass substrate 16, glass vias are formed simultaneously, and the conductive metal pillars 14 are also located within the glass vias. Compared to the traditional method for fabricating glass-based encapsulation substrates, which involves first forming vias using laser-induced etching combined with wet chemical etching, then forming a seed layer within the vias using physical vapor deposition (PVD) technology, and finally forming the conductive metal pillars 14 using the seed layer, the method of fabricating the glass-based encapsulation substrate in this application eliminates the step of forming vias in the glass substrate 16, thus eliminating the step of forming a seed layer within the vias using PVD technology.

[0119] Because this application eliminates the step of forming a seed layer in the through-hole, there are no problems such as uneven thickness, discontinuous coverage, or poor adhesion of the seed layer. At the same time, this application uses the conductive metal substrate 12 as the base point for electroplating, which can achieve defect-free filling of the growth through-hole 13 in the growth template 11 with the conductive metal substrate 12 during the electroplating process, thereby reducing defects such as holes or bubbles in the formed conductive metal pillars 14. Finally, the formed glass substrate encapsulation plate has excellent conductivity, which can reduce signal transmission loss when applied to the packaging system.

[0120] This application also provides a glass-based encapsulation substrate, which is manufactured using the glass-based encapsulation substrate manufacturing method described in any of the above embodiments. Through the above manufacturing method, defects such as holes or bubbles in the conductive metal pillars 14 within the glass-based encapsulation substrate are reduced, thereby giving the glass-based encapsulation substrate excellent conductivity. When applied in an encapsulation system, it can reduce signal transmission loss, which is especially beneficial for high-frequency and high-speed applications such as 5G / 6G communication and AI computing.

[0121] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0122] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method of fabricating a glass-based package board, the method comprising: The method for manufacturing the glass-based packaging board comprises the following steps: providing a temporary board (10) and a growth template (11) arranged on the temporary board (10); wherein the growth template (11) is provided with a growth through hole (13) penetrating the surface of the temporary board (10), and the surface of the temporary board (10) in the growth through hole (13) is provided with a conductive metal base (12); filling the growth through hole (13) with metal by electroplating, so that the growth through hole (13) forms a conductive metal column (14); removing the growth template (11); applying glass powder on one side of the temporary board (10) with the conductive metal column (14) to form a glass powder layer (15); solidifying the glass powder layer (15) to form a glass substrate (16); removing the temporary board (10); exposing both ends of the conductive metal column (14) to the surface of the glass substrate (16).

2. The method of manufacturing according to claim 1, wherein, The growth template (11) is a photoresist layer (17) arranged on the surface of the temporary board (10).

3. The method of manufacturing according to claim 2, wherein, The step of providing the temporary board (10) and the growth template (11) arranged on the temporary board (10) specifically comprises the following steps: providing a temporary board (10), and arranging a conductive metal base (12) on one side of the surface of the temporary board (10), wherein the conductive metal base (12) covers the surface of the temporary board (10); applying photoresist on the side of the conductive metal base (12) away from the temporary board (10) to form the photoresist layer (17); forming the growth through hole (13) by exposing and developing the photoresist layer (17).

4. The method of claim 1, wherein The conductive metal base (12) and the temporary board (10) are bonded by a temporary bonding glue.

5. The manufacturing method according to claim 4, wherein the step of removing the temporary board (10) specifically comprises the following steps: separating the temporary board (10) and the conductive metal base (12) from each other by heating or ultraviolet irradiation.

6. The method of making of claim 1, wherein, The step of exposing both ends of the conductive metal column (14) to the surface of the glass substrate (16) specifically comprises the following steps: grinding the glass substrate (16) to remove the conductive metal base (12) and expose both ends of the conductive metal column (14) to the surface of the glass substrate (16).

7. The method of making of claim 1, wherein, The thickness of the conductive metal base (12) is between 1 μm and 10 μm.

8. The method of making of claim 1, wherein, The step of solidifying the glass powder layer (15) to form the glass substrate (16) specifically comprises the following steps: pre-baking, desmearing, solidifying and sintering the glass powder layer (15) to form a sintered glass layer; using a linear laser beam to laser sinter the sintered glass layer until the sintered glass layer is solidified into the glass substrate (16).

9. The method of manufacturing according to claim 8, wherein, The pre-baking temperature is between 100°C and 200°C; and / or, the desmearing temperature is between 300°C and 400°C; and / or, the solidifying and sintering temperature is between 400°C and 500°C; and / or, the laser sintering is performed using an infrared waveband laser.

10. A glass-based package board, characterized by, The glass-based package board is prepared by the method of any one of claims 1-9.

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