Method and device for preparing wafer-level semiconductor single-walled carbon nanotube array film

Abstract

The invention relates to a preparation method of a wafer-level semiconductor single-walled carbon nanotube array film, which comprises the following steps: firstly, adding carbon nanotube powder into a first organic solvent of a conjugated polymer containing an azobenzene structure, performing ultrasonic treatment and centrifugation to obtain supernate, filtering the supernate, and re-dispersing the supernate into a second organic solvent, so as to obtain a carbon nanotube array film; obtaining a semiconductor type carbon nanotube solution; then providing a substrate, homogenizing functional groups on the surface of the substrate, placing the substrate on a machine table of a shearing press, injecting the semiconductor type carbon nanotube solution through a force feedback driving pump for shearing deposition, and depositing a carbon nanotube array film on the substrate; and soaking, degrading and cleaning the obtained substrate in degradation liquid to obtain the semiconductor single-walled carbon nanotube array film. According to the method, the problem that wafer-level large-area uniform preparation cannot be realized when the carbon nanotube array film is prepared by an existing solution method is solved, and meanwhile, the preparation time of the array carbon nanotube film is shortened.

Description

Technical Field

[0001] This invention belongs to the field of carbon-based electronic thin film technology, specifically relating to a method and apparatus for preparing wafer-level semiconductor single-walled carbon nanotube array thin films. Background Technology

[0002] With the arrival of the post-Moore's Law era, seeking alternatives to silicon-based materials has become one way to continue Moore's Law. Semiconductor-type single-walled carbon nanotubes (SNTs) possess characteristics such as high carrier mobility, low surface scattering, and ease of gate modulation. In short-channel transistors, their intrinsic ballistic transport properties can significantly reduce power consumption and avoid short-channel effects. Research has shown that semiconductor-type carbon nanotube transistors offer 5-10 times higher overall energy efficiency compared to traditional silicon-based transistors, fully meeting the requirements for continuing Moore's Law.

[0003] However, mass-produced and commercially available single-walled carbon nanotubes are primarily mixtures of semiconducting and metallic single-walled carbon nanotubes. Therefore, to meet the band structure requirements of channel materials in high-performance electronic devices, it is necessary to purify and separate the semiconducting carbon nanotubes from the mixture. Among existing methods for screening carbon nanotube types, encapsulating single-walled carbon nanotubes with conjugated polymers and dispersing and purifying the semiconducting carbon nanotubes in solution is an effective approach.

[0004] In the field of carbon nanotube thin film fabrication, using carbon nanotube solutions to prepare carbon nanotube array films is currently the most mature method. However, the density and uniformity of films obtained by current deposition methods need further improvement. Furthermore, the solution method currently used cannot avoid topological defects in the carbon nanotube liquid crystals formed during deposition. These random distributions significantly affect the uniformity of wafer-level large-area carbon nanotube films, hindering the realization of the performance potential of carbon nanotubes in electronic applications. Therefore, there is a need to develop a process for wafer-level semiconductor single-walled carbon nanotube array films. Summary of the Invention

[0005] The present invention aims to provide a method and apparatus for preparing wafer-level high-efficiency semiconductor single-walled carbon nanotube array thin films, in order to overcome the shortcomings of the prior art. The technical problem to be solved by the present invention is achieved through the following technical solution.

[0006] This invention provides a method for preparing a wafer-level semiconductor single-walled carbon nanotube array thin film, comprising the following steps: S1: Carbon nanotube powder is added to a first organic solvent containing a conjugated polymer with an azobenzene structure, and the supernatant is obtained by sonication and centrifugation. The supernatant is then filtered and redispersed into a second organic solvent to obtain a semiconductor carbon nanotube solution. S2: Provide a substrate and perform functional group homogenization treatment on the substrate surface. Place the substrate on a shear press machine and inject the semiconductor carbon nanotube solution through a force feedback driven pump to perform shear deposition, thereby depositing a carbon nanotube array film on the substrate. S3: The substrate obtained in step S2 is immersed in a degradation solution for degradation and cleaning to obtain a semiconductor single-walled carbon nanotube array film.

[0007] Furthermore, the molecular structure of the conjugated polymer containing the azobenzene structure includes the following structure.

[0008]

[0009] Furthermore, the mass ratio of the conjugated polymer containing the azobenzene structure to the carbon nanotube powder is 1:1, and the concentration of the carbon nanotube powder in the mixed solution is 70-300 µg / mL.

[0010] Furthermore, the first organic solvent is any one or a mixture of toluene, xylene, chloroform, dichlorobenzene, and tetrahydrofuran.

[0011] Further, the second organic solvent is any one or a mixture of toluene, chloroform, xylene, o-dichlorobenzene, 2,3-dichlorotoluene, 2,4-dichlorotoluene, and 3,5-dichlorotoluene.

[0012] Further, the shear deposition step in step S2 includes cutting the PDMS film to align with the flow channel holes of the quartz template, bonding the substrate to the quartz flow channel template with the PDMS film attached, applying pressure to seal the flow channel, injecting the semiconductor carbon nanotube solution through a force feedback-driven pump, maintaining a high-speed and stable shear cycle of the solution in the flow channel, shearing for a period of time until the carbon nanotube array film is completely adsorbed on the substrate surface, slowly squeezing out the carbon nanotube solution and injecting a second organic solvent to clean the flow channel, removing the pressure applied by the press, cleaning the surface with the second organic solvent, and drying to obtain the carbon nanotube array film deposited on the substrate.

[0013] Furthermore, the shear rate of the semiconductor carbon nanotube solution in the shear channel is between 1250 and 15000 s⁻¹. -1 .

[0014] Furthermore, the thickness of the PDMS film ranges from 20 to 200 µm.

[0015] Furthermore, the cleaning step in step S3 includes placing the substrate in a mixed solvent of a third organic solvent and water to clean surface impurities, removing the conjugated polymer wrapped on the semiconductor carbon nanotubes, and drying and low-temperature annealing to remove the depolymerized conjugated polymer.

[0016] Furthermore, the third solvent is any one or a mixture of toluene, xylene, chloroform, dichlorobenzene, and tetrahydrofuran.

[0017] Another aspect of the present invention provides a shearing apparatus for preparing the above-mentioned wafer-level semiconductor single-walled carbon nanotube array thin film, comprising: a press (1), a drive pump (2), a PDMS thin film (3), and a quartz template (4). The press (1) is equipped with a pressure sensing device (11). The bottom end of the pressure sensing device (11) is connected to the pressure head (12) of the press (1). A manual pressure rod (13) is provided on the side of the pressure sensing device (11), and a pressure rod fixing lock button (14) is provided on the back. The manual pressure rod (13) is used to apply a constant pressure to the pressure head (12). The pressure value is fed back by the pressure sensing device (11), and the constant pressure value is maintained by the pressure rod fixing lock button (14). The drive pump (2) has a built-in force feedback sensing system. The pump head (21) provides a constant shear flow rate by squeezing the pump tube (22). The pump tube (22) and the quartz template (4) are connected in a shear channel sealed by a PDMS film (3) for solution injection and circulating shearing.

[0018] The present invention has the following advantages: Semiconductor-type carbon nanotubes are purified using conjugated polymers containing azobenzene structures. Based on this, and combined with a flow channel shearing system, an ordered, high-density, and uniform wafer-level carbon nanotube array film is formed on the substrate surface. This solves the problem that existing solution methods for preparing carbon nanotube array films cannot achieve large-area uniform preparation at the wafer level, while also shortening the preparation time of array carbon nanotube films. Attached Figure Description

[0019] Figure 1 This is a flowchart of the method for preparing wafer-level semiconductor single-walled carbon nanotube array thin films according to the present invention; Figure 2 This is the UV-Vis absorption spectrum of the purified semiconductor carbon nanotube solution according to an embodiment of the present invention; Figure 3 This is a three-dimensional schematic diagram of the shearing system for the wafer-level high-efficiency semiconductor single-walled carbon nanotube array thin film of the present invention.

[0020] Figure 4 This is a right-hand view of the structure of the shearing system for the wafer-level high-efficiency semiconductor single-walled carbon nanotube array thin film of the present invention.

[0021] Figure 5 This is a front view of the structure of the shearing system for the wafer-level high-efficiency semiconductor single-walled carbon nanotube array thin film of the present invention.

[0022] Figure 6This is a polarized light microscope characterization image of the carbon nanotube thin film according to an embodiment of the present invention (scale bar: 200 µm). Figure 7 This is a scanning electron microscope image (scale bar 4 µm) of a carbon nanotube thin film according to an embodiment of the present invention. Figure 8 This is a scanning electron microscope image (scale bar 100 nm) of a carbon nanotube thin film according to an embodiment of the present invention. Figure 9 This is a transmission electron microscope image (scale bar 10 nm) of a carbon nanotube thin film according to an embodiment of the present invention. Figure 10 This is a scanning electron micrograph of a carbon nanotube film prepared using polymer PCz (scale bar: 200 nm). Figure 11 This is a statistical graph showing the transfer characteristic curves and output characteristic curves of transistors prepared from carbon nanotube thin films according to embodiments of the present invention. Detailed Implementation

[0023] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0024] This invention provides a method for preparing wafer-level high-efficiency semiconductor single-walled carbon nanotube array thin films. Semiconductor carbon nanotubes are purified using a unique conjugated polymer containing an azobenzene structure. Based on this, thin films are deposited in an atmosphere formed by an organic solvent to control the formation of locally ordered, high-density, and uniform thin films. Then, the polymer coating on the semiconductor carbon nanotubes is removed. The morphology of the thin film remains consistent before and after polymer removal, thus solving the problems of non-uniformity and low density of carbon nanotube thin films caused by the carbon nanotube thin film deposition process and polymer removal process.

[0025] The following is in conjunction with the appendix Figure 1 The present invention describes in detail the method for preparing wafer-level high-efficiency semiconductor single-walled carbon nanotube array thin films, specifically including the following steps: S1. Carbon nanotube powder generated by arc discharge is added to a first organic solvent containing a conjugated polymer with an azobenzene structure to obtain a mixed solution. The solution is then sonicated and centrifuged to obtain a supernatant. The supernatant is filtered and redispersed in a second organic solvent to obtain a high-purity semiconductor-type carbon nanotube solution. The first organic solvent is one or a mixture of toluene, xylene, chloroform, and dichlorobenzene. The second organic solvent is selected based on its volatility, which affects the interfacial tension of the first organic solvent, and its ability to induce pre-aggregation of carbon nanotubes. It can be any one or a mixture of o-dichlorobenzene, 2,3-dichlorotoluene, 2,4-dichlorotoluene, and 3,5-dichlorotoluene, which have a dispersing effect on carbon nanotubes.

[0026] Conjugated polymers containing azobenzene structures have the following molecular weight requirement: Mn≥15 kDa. They can be one or more of the polymers PFXAB obtained by the Suzuki reaction shown in the figure below, with molecular structural formula as shown in Formula I.

[0027] Formula I.

[0028] The preparation process of PFMAB is as follows: Weigh (E)-1,2-bis(4-bromo-2-methoxyphenyl)azo and 2,2'-(9,9-bisdodecyl-9H-fluorene-2,7-diyl)bis(4,4,5,5-tetramethyl-1,3,2-dioxoborane) in a 1:1 molar ratio, pour into a clean three-necked flask with a magnetic swivel, add 20 mL of toluene, stir at room temperature, and simultaneously purge with N2 (at a low flow rate to prevent rapid volatilization of toluene) for 10 min to remove oxygen.

[0029] Weigh 9 mg of palladium acetate and 18 mg of tricyclohexylphosphine (reference value for 1 mmol monomer per reaction, adjust proportionally for scale-up / scale-down). After turning off N2, quickly pour the mixture into a flask. Turn on N2 and heat to 80°C to begin the reaction. React for 10 min to ensure the catalyst dissolves and is not oxidized (if oxidized, it will turn black). Once the reaction proceeds normally, increase the N2 flow rate and add 3 mL of tetraethylammonium hydroxide and 10 mL of toluene (to prevent volatilization). Reduce the flow rate to maintain a constant positive N2 pressure in the flask and react for at least 12 h.

[0030] After the reaction is complete, increase the N2 flow rate and open the stopper. Add one drop of the reaction solution to 200 mL of methanol (methanol to toluene volume ratio 6:1). Observe the size of the precipitate flakes. If they are too large and not flocculent, add an appropriate amount of toluene to the flask and continue adding until flocculent. At this point, turn off the heating, stirring, and introduce gas to stop the reaction. Place a magnetic stir bar in the methanol and add the reaction solution dropwise while stirring (adding slowly and as close to the center of the stir bar as possible) until all the solution has been added.

[0031] The first step of filtration is performed using PTFE (polytetrafluoroethylene) filter paper, either a sintered glass funnel or a Buchner funnel can be used. The crude PFMAB obtained from the filter paper is dissolved in 50 mL of hot dichloromethane or chloroform at 80°C until completely dissolved (note that dichloromethane may boil; the solution state needs to be monitored and replenished as needed). The dichloromethane / chloroform solution of crude PFMAB is poured into a separatory funnel, and an appropriate amount of deionized water is added. The mixture is vigorously shaken to dissolve salts and impurities. The lower dichloromethane / chloroform solution is extracted. This process is repeated twice. The final dichloromethane / chloroform solution is then used to repeat the process to precipitate higher purity PFMAB. The second step of filtration is performed using PTFE filter paper. The high-purity PFMAB obtained from the filter paper is placed in a sample vial and vacuum dried in a vacuum oven at 60°C for 3 hours to remove methanol before use. The molecular weight of the obtained PFMAB polymer is: M n =19642, M w = 32320. Dissolve 60 mg of the PFMAB polymer prepared by the above process in 120 mL of toluene, heat to 80 °C and stir to make the polymer dissolve quickly and completely, cool to room temperature and then add carbon nanotube powder.

[0032] 60 mg of commercially available carbon nanotube powder was added to the toluene solution of the PFMAB polymer to obtain a mixed solution. The mixed solution was ultrasonically dispersed using a cell disruptor (6 mm amplitude rod, successively 450 W for 40 min; 330 W for 60 min), and cooled to 20 °C using cold circulating water. After ultrasonic dispersion for 1 h, it was ultracentrifuged (19000 g, 1 h), and the supernatant was collected. The supernatant was the semiconductor carbon nanotube solution encapsulating the polymer. The ultrasonically dispersed solution was evenly transferred to four 50 mL centrifuge tubes and centrifuged at 19000 g for 1 h at 3 °C. The supernatant of the centrifuged solution was collected and placed in an adsorption beaker. A rotor was added, and the beaker was placed on a hot plate with the rotation speed set to 700 rpm. 800 mg of silica gel particles were weighed and slowly added to the beaker, and adsorption was allowed to proceed for 40 min. The adsorbed solution was evenly distributed to four 50 mL centrifuge tubes and centrifuged at 2000 g for 10 min at 3 °C. The supernatant of the centrifuged solution was collected and evenly transferred to four ultracentrifuge tubes. The tubes were placed in an ultracentrifuge and centrifuged at 3°C ​​and 50,000 g for 2 hours. The supernatant was then filtered and redispersed in a second organic solvent to obtain a high-purity semiconductor carbon nanotube solution.

[0033] Figure 2This is the UV-Vis absorption spectrum of the semiconductor carbon nanotube solution purified according to the above process. A quartz cuvette with a 1 cm optical path was used. The image shows that the M0 of the metallic carbon nanotubes is in the 600-800 nm range. 11 In the absorption region, the absorption curve is concave, with no absorption peaks observed in metallic carbon nanotubes; while in the semiconductor carbon nanotube S... 22 The absorption region is in the range of 800-1200 nm, and the absorption curve shows a high absorption peak, indicating that the supernatant is a high-purity semiconductor-type single-walled carbon nanotube solution.

[0034] S2. Silicon substrate treatment: First, clean the substrate with acetone, isopropanol and deionized water for 10 min each, then clean it with plasma cleaner for 5 min (60 W), and then grow a 20 nm HfO2 layer by ALD at 250 ℃.

[0035] After placing the treated silicon wafer in a petri dish, a toluene solution of silane (1% by volume) was added to grow a monolayer on the substrate surface. Selected silanes included hexamethyldisilazane, octadecyltrimethoxysilane, octadecyltrichlorosilane, phenyltriethoxysilane, and 3-aminopropyltriethoxysilane. After capping the petri dish and allowing the reaction to stand for 20 minutes, the wafer was removed and immediately placed in clean toluene for sonication for 20 minutes. Afterward, the surface was rinsed with isopropanol and then dried with nitrogen. The substrate, after surface functional group homogenization treatment, is placed on a shear press. A PDMS (polydimethylsiloxane) film is cut and aligned with the flow channel holes of a quartz template. The substrate is then bonded to the quartz flow channel template with the PDMS film attached, and pressure is applied to seal the flow channels. A carbon nanotube solution is injected using a force feedback-driven pump, maintaining a high-speed, stable shear cycle within the flow channels. After shearing for a period until the carbon nanotube array film is completely adsorbed onto the substrate surface, the carbon nanotube solution is slowly extruded, and a second organic solvent is injected for flow channel cleaning. The pressure applied by the press is removed, the surface is cleaned with the second organic solvent, and after drying, the array film deposited on the substrate is obtained. The shearing press includes a press 1, a drive pump 2, a PDMS film 3, and a quartz template 4, as detailed below. Figures 3-5 As shown. The press 1 is equipped with a pressure sensing device 11. The bottom end of the pressure sensing device 11 is connected to the pressure head 12 of the press 1. A manual pressure rod 13 is provided on the side of the pressure sensing device 11, and a pressure rod fixing lock button 14 is provided on the back. The manual pressure rod 13 is used to apply a constant pressure to the pressure head 12. The pressure value is fed back by the pressure sensing device 11, and the constant pressure value is maintained by the pressure rod fixing lock button 14. The drive pump 2 has a built-in force feedback sensing system. The pump head 21 provides a constant shear flow rate by squeezing the pump tube 22. The pump tube 22 and the quartz template 4 are connected in a shear channel sealed by the PDMS film 3 to carry out solution injection and circulating shearing.

[0036] S3. After immersing the carbon nanotube film obtained in step S2 in the degradation solution for degradation, it is then placed in a mixed solvent of a third organic solvent and water to thoroughly clean the surface impurities, remove the conjugated polymers wrapped on the semiconductor carbon nanotubes, and dry and anneal at low temperature to remove the depolymerized conjugated polymers, thereby obtaining an ordered, high-density, and uniform wafer-level carbon nanotube array film.

[0037] Figure 6 This is a polarized light microscope (POM) image of the carbon nanotube array film prepared by the process steps of the embodiments of this application. It can be seen from the image that the carbon nanotube array is uniformly deposited over a large area on the wafer, and obvious liquid crystal defects appear at the flow channel outlet. This indicates that during the shearing process, the shearing system used in this application causes a phase transition in the carbon nanotube array in the solution, which leads to adsorption. This is not present in other orientation systems that utilize shearing. Figure 7 and Figure 8 This is an SEM image of the carbon nanotube film prepared by the process steps in the embodiments of this application. As can be seen from the image, the morphology at different scales shows that a high-density carbon nanotube array film with globally ordered and uniform morphology at the wafer level can be achieved, and the carbon nanotube density can reach more than 100 nanotubes / μm, which is a high-density carbon nanotube film. Figure 9 The image shows a transmission electron microscope image of a carbon nanotube thin film. As can be seen, the carbon nanotube spacing of the array film prepared by this invention is uniform, approximately 5-10 nm, and the film density is approximately 100 CNTs / µm. There is essentially no carbon nanotube stacking or multilayering.

[0038] In another comparative embodiment, the conjugated polymer containing the azobenzene structure was replaced with polymer PCz, while the other steps were the same as in the embodiments of this application. The SEM image of the final carbon nanotube array film is shown below. Figure 10 As shown, when using polymer PCz, the system cannot undergo a phase transition during shearing and cannot form a high-density carbon nanotube array film.

[0039] A silicon wafer with a semiconductor-type carbon nanotube thin film was deposited according to the process steps of the embodiments of this application. Carbon nanotube array channels were defined by photolithography and plasma etching (ICP), and the carbon nanotube material outside the channels was removed by etching. Ti / Pd / Au = 0.5 nm / 20 nm / 20 nm was deposited as source / drain electrodes using a two-step exposure and self-aligned electron beam evaporation method. The channel length L was 500 nm and the width was 10 µm. The electrical performance of the formed transistor was tested, and the results are as follows: Figure 11 As shown, V ds When = -2 V, the on-state current I is measured. on = 510 µA / μm, exhibiting a small coefficient of variation and a high on / off ratio, with good ohmic contact between the source / drain metal electrodes and the channel carbon nanotube material. It is evident that the transistor employing the carbon nanotube thin film of this invention demonstrates excellent electrical performance and uniformity.

[0040] Therefore, the above tests demonstrate that the method of the present invention, in an atmosphere of organic solvent, combines the effect of a conjugated polymer containing an azobenzene structure, and by controlling the conditions, obtains a wafer-level globally ordered, high-density, and uniform semiconductor carbon nanotube film under the synergistic effect of various aspects, and can maintain a locally ordered, high-density, and uniform film morphology after the polymer is removed.

[0041] It should be noted that the above detailed descriptions are exemplary and intended to provide further explanation of this application. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains.

[0042] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0043] It should be noted that the terms "first," "second," etc., used in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate so that the embodiments of this application described herein can be implemented in sequences other than those illustrated or described herein.

[0044] Furthermore, the terms “comprising” and “having”, and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units is not necessarily limited to those steps or units that are explicitly listed, but may include other steps or units that are not explicitly listed or that are inherent to such process, method, product, or apparatus.

[0045] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways, such as rotated 90 degrees or in other orientations, and the spatial relative descriptions used herein will be interpreted accordingly.

[0046] In the detailed description above, reference has been made to the accompanying drawings, which form part of this document. In the drawings, similar symbols typically identify similar parts unless the context otherwise indicates otherwise. The illustrated embodiments described in the detailed specification, drawings, and claims are not intended to be limiting. Other embodiments may be used and other changes may be made without departing from the spirit or scope of the subject matter presented herein.

[0047] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for preparing a wafer-level semiconductor single-walled carbon nanotube array thin film, characterized in that, Includes the following steps: S1: Carbon nanotube powder is added to a first organic solvent containing a conjugated polymer with an azobenzene structure, and the supernatant is obtained by sonication and centrifugation. The supernatant is then filtered and redispersed into a second organic solvent to obtain a semiconductor carbon nanotube solution. S2: Provide a substrate and perform surface functional group homogenization treatment on the substrate. Place the substrate on a shear press machine and inject the semiconductor carbon nanotube solution through a force feedback driven pump to perform shear deposition, thereby depositing a carbon nanotube array film on the substrate. S3: The substrate obtained in step S2 is immersed in a degradation solution for degradation and cleaning to obtain a semiconductor single-walled carbon nanotube array film.

2. The method for preparing a wafer-level semiconductor single-walled carbon nanotube array thin film as described in claim 1, characterized in that, The molecular structural formula of the conjugated polymer containing the azobenzene structure is as follows:

3. The method for preparing a wafer-level semiconductor single-walled carbon nanotube array thin film as described in claim 1, characterized in that, The mass ratio of the conjugated polymer containing the azobenzene structure to the carbon nanotube powder is 1:1, and the concentration of the carbon nanotube powder in the mixed solution is 70-300 μg / mL.

4. The method for preparing a wafer-level semiconductor single-walled carbon nanotube array thin film as described in claim 1, characterized in that, The first organic solvent is any one or a mixture of toluene, xylene, chloroform, dichlorobenzene, and tetrahydrofuran; the second organic solvent is any one or a mixture of toluene, chloroform, xylene, o-dichlorobenzene, 2,3-dichlorotoluene, 2,4-dichlorotoluene, and 3,5-dichlorotoluene.

5. The method for preparing a wafer-level semiconductor single-walled carbon nanotube array thin film as described in claim 1, characterized in that, The shear deposition step in step S2 includes cutting the PDMS film to align with the flow channel pores of the quartz template, bonding the substrate to the quartz flow channel template with the PDMS film attached, applying pressure to seal the flow channel, injecting the semiconductor carbon nanotube solution through a force feedback-driven pump, maintaining a high-speed and stable shear cycle of the solution in the flow channel, shearing for a period of time until the carbon nanotube array film is completely adsorbed on the substrate surface, slowly squeezing out the carbon nanotube solution and injecting a second organic solvent to clean the flow channel, removing the pressure applied by the press, cleaning the surface with the second organic solvent, and drying to obtain the carbon nanotube array film deposited on the substrate.

6. The method for preparing a wafer-level semiconductor single-walled carbon nanotube array thin film as described in claim 5, characterized in that, The shear rate of the semiconductor carbon nanotube solution in the shear channel ranges from 1250 to 15000 s. -1 .

7. The method for preparing a wafer-level semiconductor single-walled carbon nanotube array thin film as described in claim 5, characterized in that, The thickness of the PDMS film ranges from 20 to 200 μm.

8. The method for preparing a wafer-level semiconductor single-walled carbon nanotube array thin film as described in claim 1, characterized in that, The cleaning step in step S3 includes placing the substrate in a mixed solvent of a third organic solvent and water to clean surface impurities, removing the conjugated polymer wrapped on the semiconductor carbon nanotubes, and drying and low-temperature annealing to remove the depolymerized conjugated polymer.

9. The method for preparing a wafer-level semiconductor single-walled carbon nanotube array thin film as described in claim 8, characterized in that, The third solvent is any one or a mixture of toluene, xylene, chloroform, dichlorobenzene, and tetrahydrofuran.

10. A shearing apparatus for preparing wafer-level semiconductor single-walled carbon nanotube array thin films as described in claims 1-9, characterized in that, include: A press (1), a drive pump (2) that can provide a constant flow rate, a PDMS film (3) and a quartz template (4); The press (1) is equipped with a pressure sensing device (11). The bottom end of the pressure sensing device (11) is connected to the pressure head (12) of the press (1). A manual pressure rod (13) is provided on the side of the pressure sensing device (11), and a pressure rod fixing lock button (14) is provided on the back. The manual pressure rod (13) is used to apply a constant pressure to the pressure head (12). The pressure value is fed back by the pressure sensing device (11), and the constant pressure value is maintained by the pressure rod fixing lock button (14). The drive pump (2) has a built-in force feedback sensing system. The pump head (21) provides a constant shear flow rate by squeezing the pump tube (22). The pump tube (22) and the quartz template (4) are connected in a shear channel sealed by a PDMS film (3) for solution injection and circulating shearing.

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