X-band high-power solid-state transmitting assembly based on power synthesis and assembling method thereof
By using a power-combining-based X-band high-power solid-state transmitter, the reliability and complexity issues of microwave vacuum electronic devices have been solved, achieving efficient power combining and reliability improvement, thus meeting the needs of radar and electronic countermeasures systems.
Patent Information
- Application Number
- CN202511682952.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-17
- Publication Date
- 2026-02-24
AI Technical Summary
Among existing X-band high-power transmitting components, microwave vacuum electronic devices have high voltage, complex peripheral circuits, low reliability, and are prone to frequency shifts, making it difficult to meet the needs of radar and electronic countermeasures systems.
The X-band high-power solid-state transmitter assembly based on power combining is adopted, including a pre-stage drive amplifier module, a high-power power divider network, a final-stage power amplifier module, a waveguide microstrip converter, a high-power waveguide combining network, a power control circuit, and an online temperature feedback device. Through multi-stage series connection and tight mechanical structure, the phase, standing wave ratio, and isolation are adjusted independently, thereby improving the combining efficiency and reliability.
It achieves efficient power combining, reduces transmission power loss, improves equipment reliability and assembly accuracy, and meets the usage requirements of radar and electronic countermeasures systems.
Smart Images

Figure CN121559449A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the fields of radar and electronic countermeasures, and in particular to an X-band high-power solid-state transmitter based on power combining and its assembly method. Background Technology
[0002] X-band high-power transmitters are core components of active phased array radars, primarily responsible for signal amplification and phase adjustment. Their performance directly affects the radar's detection range and imaging quality. GaN-based power amplifier chips can meet the power requirements of applications in radar, electronic countermeasures systems, and other fields. However, the microwave vacuum electronic devices used require high voltages, have complex peripheral circuits, lower reliability, and are prone to frequency shifts.
[0003] Power combining is a technique in communications and electronic engineering that combines the outputs of multiple power amplifiers through a specific network to increase the total power. By using power combining, the output power of multiple power amplifier chips is combined through circuit / space power synthesis, which can effectively increase the output power level of the system. Summary of the Invention
[0004] The purpose of this invention is to provide an X-band high-power solid-state transmitter based on power combining, which has high combining efficiency, low transmission power loss, low assembly difficulty, and can meet the usage requirements of radar and electronic countermeasures systems, as well as its assembly method.
[0005] The technical solution to achieve the purpose of this invention is: an X-band high-power solid-state transmitter component based on power combining, comprising a pre-stage drive amplifier module, a high-power power divider network, a final-stage power amplifier module, a waveguide microstrip converter, a high-power waveguide combining network, a power control circuit, and an online temperature feedback device;
[0006] The pre-amplifier module adopts a multi-stage series configuration to improve the spatial isolation of the drive circuit.
[0007] The high-power power divider network divides the output signal of the pre-stage driver amplifier module into four paths and sends them to the final stage power amplifier module.
[0008] The signal output from the final stage power amplifier module is synthesized to the set power output through a waveguide microstrip converter and a high-power waveguide synthesis network.
[0009] The power control circuit is set on the power control board, which is fixed on the pre-amplifier module and the final power amplifier module to ensure stable power supply.
[0010] The online temperature feedback device is fixed at the heat source sensitive position of the solid-state emission component and provides feedback on the current temperature of the solid-state emission component through voltage value.
[0011] Furthermore, the pre-stage drive amplifier module, high-power power divider network, final stage power amplifier module, waveguide microstrip converter, high-power waveguide combining network, power control circuit and online temperature feedback device are disposed in the component housing. The top of the component housing is provided with a component cover plate, and the side wall of the component housing is provided with a waveguide output port, a power supply interface, an input interface and a control and feedback interface.
[0012] Furthermore, the pre-amplifier module adopts a multi-stage series configuration including a first amplifier module, a second amplifier module, and a third amplifier module, with each amplifier circuit having its own enclosed cavity.
[0013] Furthermore, the power control circuit includes a first power control circuit, a second power control circuit, and a third power control circuit. The first power control circuit is fixed above the first drive amplifier module and the second drive amplifier module via a power control board. The second power control circuit is fixed above the third drive amplifier module via a power control board. The third power control circuit is fixed above the final stage power amplifier module via a power control board.
[0014] The power control board is equipped with a power amplifier modulation circuit, which includes a fast discharge circuit and a control signal oscillation prevention circuit.
[0015] Furthermore, the phase of each output terminal of the high-power power divider network can be adjusted independently, with an adjustment range covering ±10°, which can compensate for the phase difference caused by devices and circuits.
[0016] Furthermore, the final stage power amplifier module adopts a tightly fitted mechanical structure to ensure the continuity of grounding and avoid large reflections at the transition port, which could cause arcing at the connection or insufficient output power.
[0017] Furthermore, the high-power waveguide power combining network is equipped with tuning screws for adjusting standing wave ratio and isolation.
[0018] Furthermore, the high-power waveguide synthesis network includes an upper cover plate, a lower cover plate, a tuning screw, and an isolation port for absorbing loads. The upper cover plate, the lower cover plate, and the component housing are provided with positioning pins. The waveguide end face of the solid-state transmitting component is aligned with the output waveguide end face of the high-power waveguide synthesis network through a clamp and fixed by mechanical parts. The waveguide port of the high-power waveguide synthesis network is fitted with the waveguide port of the solid-state transmitting component.
[0019] Furthermore, the pre-amplifier module amplifies the 8dBm signal to 52.3dBm; the high-power power divider network adopts a Gysel configuration with a distribution loss of 7.3dB, ultimately outputting 45dBm; the final power amplifier module amplifies the input signal to 51.6dBm; and the high-power waveguide combining network adopts a rectangular waveguide configuration to combine the output signal of the final power amplifier link to 57.1dBm.
[0020] An assembly method for an X-band high-power solid-state transmitter assembly based on power combining, as described above, is as follows:
[0021] During assembly, the high-power waveguide combining network, waveguide microstrip conversion device, and final stage power amplifier module are sequentially fixed by mechanical structure and then installed into the component housing. Then, the high-power power divider network, first drive amplifier module, second drive amplifier module, and third drive amplifier module are sequentially installed into the component housing. Finally, the first power control circuit is fixed above the first and second drive amplifier modules, the second power control circuit is fixed above the third drive amplifier module, and the third power control circuit is fixed above the final stage power amplifier module.
[0022] Compared with the prior art, the present invention has the following significant advantages: (1) Each output terminal of the high-power power divider network can independently adjust the phase, and the adjustment range covers ±10°, which can compensate for the phase difference caused by the device and circuit and improve the synthesis efficiency; (2) The connection between the final stage power amplifier module and the waveguide microstrip conversion device adopts a tight mechanical structure connection to ensure that the grounding has good continuity when the high-power signal transmission transitions, avoids large reflection at the transition port, and prevents arcing at the connection or insufficient output power, thus improving the reliability of the equipment; (3) The high-power synthesis network has low insertion loss, and the performance and assembly accuracy of the high-power synthesis network are improved by using tuning screws and positioning pins; (4) The entire component is compactly arranged, small in size, light in weight, and has high output power. Attached Figure Description
[0023] Figure 1 This is a three-dimensional structural schematic diagram of an X-band high-power solid-state emission component based on power combining according to the present invention.
[0024] Figure 2 This is a schematic diagram of the internal structure of an X-band high-power solid-state transmitter based on power combining in an embodiment of the present invention.
[0025] Figure 3 This is an exploded view of an X-band high-power solid-state emission component based on power combining in an embodiment of the present invention.
[0026] Figure 4 This is a schematic diagram of the high-power power divider network in an embodiment of the present invention.
[0027] Figure 5 This is a simulation result curve of the phase adjustment range of the high-power power divider network in this embodiment of the invention.
[0028] Figure 6 This is a schematic diagram showing the connection between the final stage power amplifier module and the waveguide microstrip conversion device in an embodiment of the present invention.
[0029] Figure 7 This is a schematic diagram of the high-power combining network in an embodiment of the present invention.
[0030] Figure 8 This is a three-dimensional surface diagram showing the relationship between synthesis efficiency and phase difference and amplitude difference in an embodiment of the present invention.
[0031] Figure 9 This is a schematic diagram of the principle of the X-band high-power solid-state emission component based on power combining of the present invention.
[0032] The numbers in the diagram are as follows: 1-waveguide output port, 2-power supply interface, 3-input interface, 4-control and feedback interface, 5-first drive amplifier module, 6-second drive amplifier module, 7-third drive amplifier module, 8-high-power power divider network, 9-final stage power amplifier module, 10-high-power waveguide synthesis network, 11-waveguide microstrip conversion device, 12-first power control circuit, 13-second power control circuit, 14-third power control circuit, 15-online temperature feedback device, 16-component housing, 17-component cover plate, 18-tuning screw, 19-isolation port absorbs load. Detailed Implementation
[0033] like Figure 1 , Figure 2 , Figure 3 As shown, the present invention provides an X-band high-power solid-state transmitter component based on power combining, including a pre-stage drive amplifier module, a high-power power divider network 8, a final stage power amplifier module 9, a waveguide microstrip converter 11, a high-power waveguide combining network 10, a power control circuit, and a temperature online feedback device 15.
[0034] The pre-amplifier module adopts a multi-stage series configuration to improve the spatial isolation of the drive circuit.
[0035] The high-power power divider network 8 divides the output signal of the pre-stage driver amplifier module into four paths and sends them to the final stage power amplifier module 9.
[0036] The signal output by the final stage power amplifier module 9 is synthesized to the set power output through the waveguide microstrip conversion device 11 and the high-power waveguide synthesis network 10.
[0037] The power control circuit is set on the power control board, which is fixed on the pre-amplifier module and the final power amplifier module 9 to ensure stable power supply.
[0038] The online temperature feedback device 15 is fixed to the heat source sensitive position of the solid-state emission component by screws, and provides feedback on the current temperature of the solid-state emission component through voltage value.
[0039] As a specific example, the pre-stage drive amplifier module, high-power power divider network 8, final stage power amplifier module 9, waveguide microstrip converter 11, high-power waveguide combining network 10, power control circuit and online temperature feedback device 15 are disposed inside the component housing 16. The top of the component housing 16 is provided with a component cover plate 17, and the side wall of the component housing 16 is provided with a waveguide output port 1, a power supply interface 2, an input interface 3, and a control and feedback interface 4.
[0040] As a specific example, the pre-amplifier module adopts a multi-stage series configuration including a first amplifier module 5, a second amplifier module 6, and a third amplifier module 7, with each amplifier circuit having its own enclosed cavity.
[0041] As a specific example, the power control circuit includes a first power control circuit 12, a second power control circuit 13, and a third power control circuit 14. The first power control circuit 12 is fixed above the first drive amplifier module 5 and the second drive amplifier module 6 via a power control board. The second power control circuit 13 is fixed above the third drive amplifier module 7 via a power control board. The third power control circuit 14 is fixed above the final stage power amplifier module 9 via a power control board.
[0042] The power control board is equipped with a power amplifier modulation circuit, which includes a fast discharge circuit and a control signal oscillation prevention circuit.
[0043] As a specific example, the high-power power divider network 8 allows each output terminal to adjust its phase independently, with an adjustment range covering ±10°, which can compensate for phase differences caused by devices and circuits and improve the synthesis efficiency.
[0044] As a specific example, the final stage power amplifier module 9 adopts a tightly fitted mechanical structure to ensure the continuity of grounding and avoid large reflections at the transition port, which could cause arcing at the connection or insufficient output power.
[0045] As a specific example, the high-power waveguide power combining network 10 is provided with a tuning screw 18 for adjusting the standing wave ratio and isolation.
[0046] As a specific example, the high-power waveguide synthesizing network 10 includes an upper cover plate, a lower cover plate, a tuning screw 18, and an isolation port absorption load 19. The upper cover plate, the lower cover plate, and the component housing 16 are provided with positioning pins. The waveguide end face of the solid-state transmitting component is aligned with the output waveguide end face of the high-power waveguide synthesizing network 10 by a clamp and fixed by a mechanical component. The waveguide port of the high-power waveguide synthesizing network 10 is fitted with the waveguide port of the solid-state transmitting component.
[0047] As a specific example, the pre-amplifier module amplifies the 8dBm signal to 52.3dBm; the high-power power divider network 8 adopts a Gysel configuration with a distribution loss of 7.3dB, ultimately outputting 45dBm; the final power amplifier module 9 amplifies the input signal to 51.6dBm; and the high-power waveguide combining network 10 adopts a rectangular waveguide configuration to combine the output signal of the final power amplifier link to 57.1dBm.
[0048] The present invention also provides an assembly method for an X-band high-power solid-state transmitter assembly based on power combining as described above, the specific process of which is as follows:
[0049] During assembly, the high-power waveguide combining network 10, waveguide microstrip conversion device 11, and final stage power amplifier module 9 are sequentially fixed by mechanical structure and then installed into the component housing 16. Then, the high-power power divider network 8, first drive amplifier module 5, second drive amplifier module 6, and third drive amplifier module 7 are sequentially installed into the component housing 16. Finally, the first power control circuit 12 is fixed above the first drive amplifier module 5 and the second drive amplifier module 6, the second power control circuit 13 is fixed above the third drive amplifier module 7, and the third power control circuit 14 is fixed above the final stage power amplifier module 9.
[0050] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.
[0051] Example
[0052] like Figure 1 , Figure 2 , Figure 3 As shown, this embodiment of an X-band high-power solid-state transmitter based on power combining includes a first drive amplification module 5, a second drive amplification module 6, a third drive amplification module 7, a high-power power divider network 8, a final-stage power amplification module 9, a waveguide microstrip conversion device 11, a high-power waveguide combining network 10, a first power control circuit 12, a second power control circuit 13, a third power control circuit 14, an online temperature feedback device 15, a component housing 16, and a component cover plate 17.
[0053] The pre-amplifier module adopts a multi-stage series configuration of first driver amplifier module 5, second driver amplifier module 6, and third driver amplifier module 7 to improve the spatial isolation of the driver circuit. The high-power power divider network 8 divides the output signal of the pre-amplifier module into four paths and sends them to the final power amplifier module 9. This network has a phase adjustment margin of ±10°. The signal output by the final power amplifier module 9 is combined to a power output of 500W through the waveguide microstrip converter 11 and the high-power waveguide combining network 10. The component housing 16 has a power supply interface 2, an input interface 3, and a control and feedback interface 4 on one side, and a waveguide output port 1 on the other side.
[0054] In this embodiment, the pre-amplifier module adopts a multi-stage series configuration, which splits the pre-amplifier module into a first pre-amplifier module 5, a second pre-amplifier module 6, and a third pre-amplifier module 7, and interconnects them through an RF connector and an RF cable.
[0055] In this embodiment, as Figure 4 As shown, each output terminal of the high-power power divider network 8 can independently adjust its phase, with an adjustment range covering ±10°. The simulation results of the adjustment range are as follows. Figure 5 As shown, it can compensate for the phase difference caused by devices and circuits, and improve the synthesis efficiency. The relationship between synthesis efficiency and phase difference and amplitude difference is as follows: Figure 8 As shown.
[0056] In this embodiment, the final stage power amplifier module 9 adopts a tightly fitted mechanical structure to ensure the continuity of grounding and avoid large reflections at the transition port, which could cause arcing at the connection or insufficient output power.
[0057] In this embodiment, as Figure 7 As shown, the high-power waveguide power combining network 10 is equipped with a tuning screw 18 for adjusting the standing wave ratio and isolation.
[0058] In this embodiment, as Figure 7 As shown, the high-power waveguide combining network 10 consists of an upper cover plate, a lower cover plate, a tuning screw 18, and an isolation port absorption load 19. Positioning pins are provided on the upper cover plate, lower cover plate, and component housing 16. The waveguide end face of the X-band high-power solid-state transmitter based on power combining is aligned with the output waveguide end face of the high-power waveguide combining network 10 using a clamp and fixed by mechanical components, achieving a high-precision fit between the waveguide port of the high-power waveguide combining network 10 and the waveguide port face of the X-band high-power solid-state transmitter based on power combining. The tuning screw 18 is threaded onto the lower cover plate of the high-power waveguide combining network 10 and can be adjusted to regulate the standing wave ratio, port isolation, and insertion loss parameters within the operating frequency band of the high-power waveguide combining network 10 to obtain optimal performance.
[0059] In this embodiment, the final-stage power amplifier module 9, the waveguide microstrip conversion device 11, and the high-power waveguide combining network 10 are sequentially fixed by a mechanical structure before being placed into the component housing 16; the connection method between the final-stage power amplifier module and the waveguide microstrip conversion device is as follows: Figure 6 As shown.
[0060] In this embodiment, the first power control circuit 12 is fixed on the first drive amplification module 5 and the second drive amplification module 6, the second power control circuit 13 is fixed on the third drive amplification module 7, and the third power control circuit 14 is fixed on the final stage power amplification module 9 to ensure stable power supply.
[0061] In this embodiment, the first power control circuit 12, the second power control circuit 13, and the third power control circuit 14 are provided with power amplifier modulation circuits, and the power amplifier modulation circuits include fast discharge circuits and control signal oscillation prevention circuits.
[0062] In this embodiment, the online temperature feedback device 15 is fixed to the heat source sensitive position of the X-band high-power solid-state emission component based on power combining by screws, and the current temperature of the X-band high-power solid-state emission component based on power combining is fed back by voltage value.
[0063] like Figure 9 As shown, the working principle of the X-band high-power solid-state transmitter based on power combining is as follows:
[0064] (1) The pre-stage drive amplifier module adopts a multi-stage series configuration, which splits the drive amplifier module into a first drive amplifier module 5, a second drive amplifier module 6, and a third drive amplifier module 7. This improves circuit isolation, avoids the risk of self-oscillation, and facilitates disassembly and replacement. The drive stage amplifier circuit amplifies the 8dBm signal to 52.3dBm.
[0065] (2) The high-power power divider network 8 divides the output signal of the pre-amplifier module into 4 channels in the form of Gysel, which is convenient for sintering power loads. It includes cables, the distribution loss is 7.3dB, and the final output is 45dBm.
[0066] (3) The final stage power amplifier module 9 consists of a power amplifier and an isolator, which amplifies the input signal to 51.6dBm.
[0067] (4) The high-power waveguide synthesis network 10 adopts a rectangular waveguide form, which can withstand high power on the one hand and effectively reduce transmission loss and power loss on the other hand, and finally synthesizes the output signal of the final stage power amplifier link to 57.1dBm.
[0068] In this embodiment, the assembly method of the X-band high-power solid-state transmitter based on power combining is as follows:
[0069] The X-band high-power solid-state transmitter based on power combining is internally composed of multifunctional modules. During assembly, the high-power waveguide combining network 10, waveguide microstrip conversion device 11, and final-stage power amplifier module 9 are first assembled and then installed into the component housing 16. Then, the high-power power divider network 8, first drive amplifier module 5, second drive amplifier module 6, and third drive amplifier module 7 are sequentially installed into the component housing 16. Finally, the first power control circuit 12 is fixed above the first drive amplifier module 5 and the second drive amplifier module 6, the second power control circuit 13 is fixed above the third drive amplifier module 7, and the third power control circuit 14 is fixed above the final-stage power amplifier module 9. This method effectively improves electromagnetic isolation.
[0070] The above are merely preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principle of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.
Claims
1. A high-power X-band solid-state transmitter based on power combining, characterized in that, It includes a pre-stage drive amplifier module, a high-power power divider network (8), a final stage power amplifier module (9), a waveguide microstrip converter (11), a high-power waveguide synthesis network (10), a power control circuit, and a temperature online feedback device (15). The pre-amplifier module adopts a multi-stage series configuration to improve the spatial isolation of the drive circuit. The high-power power divider network (8) divides the output signal of the pre-stage drive amplifier module into four paths and sends them to the final stage power amplifier module (9). The signal output by the final stage power amplifier module (9) is synthesized to the set power output through the waveguide microstrip conversion device (11) and the high-power waveguide synthesis network (10); The power control circuit is set on the power control board, which is fixed on the pre-amplifier module and the final power amplifier module (9) to ensure stable power supply. The online temperature feedback device (15) is fixed at the heat source sensitive position of the solid-state emission component and provides feedback on the current temperature of the solid-state emission component through voltage value.
2. The X-band high-power solid-state transmitter based on power combining according to claim 1, characterized in that, The pre-stage drive amplifier module, high-power power divider network (8), final stage power amplifier module (9), waveguide microstrip converter (11), high-power waveguide synthesis network (10), power control circuit and temperature online feedback device (15) are set inside the component box (16). The top of the component box (16) is provided with a component cover plate (17), and the side wall of the component box (16) is provided with a waveguide output port (1), a power supply interface (2), an input interface (3), and a control and feedback interface (4).
3. The X-band high-power solid-state transmitter based on power combining according to claim 2, characterized in that, The pre-amplifier module adopts a multi-stage series configuration including a first driver amplifier module (5), a second driver amplifier module (6), and a third driver amplifier module (7), with each amplifier circuit enclosed in a separate cavity.
4. The X-band high-power solid-state transmitting component based on power combining according to claim 3, characterized in that, The power control circuit includes a first power control circuit (12), a second power control circuit (13) and a third power control circuit (14). The first power control circuit (12) is fixed above the first drive amplifier module (5) and the second drive amplifier module (6) via a power control board. The second power control circuit (13) is fixed above the third drive amplifier module (7) via a power control board. The third power control circuit (14) is fixed above the final stage power amplifier module (9) via a power control board. The power control board is equipped with a power amplifier modulation circuit, which includes a fast discharge circuit and a control signal oscillation prevention circuit.
5. The X-band high-power solid-state transmitter based on power combining according to claim 3, characterized in that, The high-power power divider network (8) allows for independent phase adjustment at each output terminal, with an adjustment range covering ±10°, which can compensate for phase differences caused by devices and circuits.
6. The X-band high-power solid-state transmitter based on power combining according to claim 3, characterized in that, The final stage power amplifier module (9) adopts a mechanical structure that fits tightly to ensure the continuity of grounding and avoid large reflections at the transition port, which could cause arcing at the connection or insufficient output power.
7. The X-band high-power solid-state transmitter based on power combining according to claim 3, characterized in that, The high-power waveguide power combining network (10) is equipped with a tuning screw (18) for adjusting the standing wave and isolation.
8. The X-band high-power solid-state transmitter based on power combining according to claim 7, characterized in that, The high-power waveguide synthesis network (10) includes an upper cover plate, a lower cover plate, a tuning screw (18), and an isolation port absorption load (19). The upper cover plate, the lower cover plate, and the component housing (16) are provided with positioning pins. The waveguide end face of the solid-state transmitting component is aligned with the output waveguide end face of the high-power waveguide synthesis network (10) by a clamp and fixed by a mechanical component. The waveguide port of the high-power waveguide synthesis network (10) is attached to the waveguide port of the solid-state transmitting component.
9. The X-band high-power solid-state transmitter based on power combining according to claim 1, characterized in that, The pre-amplifier module amplifies the 8dBm signal to 52.3dBm; the high-power power divider network (8) adopts the Gysel form, with a distribution loss of 7.3dB, and finally outputs 45dBm; the final power amplifier module (9) amplifies the input signal to 51.6dBm; the high-power waveguide synthesis network (10) adopts the rectangular waveguide form and synthesizes the output signal of the final power amplifier link to 57.1dBm.
10. An assembly method for an X-band high-power solid-state transmitter based on power combining as described in any one of claims 3 to 9, characterized in that, The specific process is as follows: During assembly, the high-power waveguide synthesis network (10), waveguide microstrip conversion device (11), and final stage power amplifier module (9) are fixed in sequence by mechanical structure and then installed into the component box (16); then the high-power power divider network (8), first drive amplifier module (5), second drive amplifier module (6), and third drive amplifier module (7) are installed into the component box (16) in sequence; finally, the first power control circuit (12) is fixed above the first drive amplifier module (5) and the second drive amplifier module (6), the second power control circuit (13) is fixed above the third drive amplifier module (7), and the third power control circuit (14) is fixed above the final stage power amplifier module (9).