Life checking device and life checking method for semiconductor laser linear array

Abstract

The invention provides a service life assessment device and method for a semiconductor laser linear array, and the device comprises a plurality of assessment node modules which are connected in parallel, each assessment node module comprises a temperature measurement assembly and an optical power monitoring assembly, and the assessment node modules are used for monitoring and collecting the output data of temperature and laser; the assessment node module, the multi-channel driving module and the water cooling module are all electrically connected with the integrated communication module, and the integrated communication module is electrically connected with the industrial personal computer and the display; the multi-channel driving module is electrically connected with the checking node module, and the multi-channel driving module is used for driving each channel of the semiconductor laser linear array according to a set current; a waterway system of the water cooling module is used for cooling the assessment node module; the integrated communication module is used for preprocessing the collected data and then transmitting the data to the industrial personal computer and the display; and the industrial personal computer and the display are used for carrying out service life assessment analysis on the data collected by the assessment node module. And the reliability evaluation efficiency and the service life prediction precision of the semiconductor laser array are improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of laser reliability testing, and particularly relates to a life test device and a life test method for a semiconductor laser linear array. BACKGROUND

[0002] As a core device of optoelectronic systems, high-power semiconductor laser linear arrays have been widely used in optical communication, medical treatment, industrial processing and other fields. The long-term working reliability of the high-power semiconductor laser linear array directly determines the service life and operation safety of the system. Especially under extreme working conditions such as spacecraft payloads and optical fiber pumping sources, accurate evaluation of the device life and failure threshold has become a key technical bottleneck restricting the reliability of high-end equipment. The existing laser life test system can only use single stress acceleration to perform aging test on a single laser, which cannot meet the life test requirements of multi-channel laser arrays (high-power space light). At the same time, the traditional aging test system has problems such as insufficient heat dissipation and low data acquisition efficiency during long-term test of high-power lasers. Therefore, there is an urgent need for a system capable of life test for semiconductor laser linear arrays to improve test efficiency and accuracy. SUMMARY

[0003] Therefore, the embodiments of the present application provide a life test device and a life test method for a semiconductor laser linear array to improve the reliability evaluation efficiency and life prediction accuracy of high-power semiconductor laser arrays.

[0004] The embodiments of the present application provide the following technical solutions: A life test device for a semiconductor laser linear array comprises: a test node module, a multi-channel driving module, a water cooling module, an integrated communication module, an industrial computer and a display; The plurality of test node modules are connected in parallel with each other, and the test node module comprises a temperature measurement assembly and a light power monitoring assembly. The test node module is used for collecting and monitoring the output data of temperature and laser; The test node module, the multi-channel driving module and the water cooling module are electrically connected with the integrated communication module, and the integrated communication module is electrically connected with the industrial computer and the display; The multi-channel driving module is electrically connected with the test node module, and the multi-channel driving module is used for driving each channel of the semiconductor laser linear array according to the set current; The waterway system of the water cooling module is arranged around the test node module and is used for cooling the test node module; The integrated communication module is used for transmitting the data collected by the test node module, the multi-channel driving module and the water cooling module to the industrial computer and the display after preprocessing, the industrial computer and the display are used for life test analysis on the data collected by the test node module, and meanwhile, data collection and setting of the multi-channel driving module and the water cooling module are realized, the multi-channel driving module is used for power supply of the semiconductor laser linear array to be tested, and the water cooling module is used for heat dissipation of the semiconductor laser linear array to be tested and the test node module, and meanwhile, temperature control is realized.

[0005] Further, the temperature measurement assembly comprises a power supply circuit, a filter circuit, a three-wire measurement circuit and a bridge temperature measurement circuit. The power supply is input to the filter circuit, a 12V voltage is output through the filter circuit, the 12V voltage is input to the power supply circuit, the power supply circuit is connected with the three-wire measurement circuit, and the three-wire measurement circuit is connected with the bridge temperature measurement circuit and then connected to the integrated communication module. The bridge temperature measurement circuit comprises a fourth resistor R4, a fifth resistor R5, a sixth resistor R6 and a resistor R PT ; The fourth resistor R4 and the resistor R PT are connected in series, and the fifth resistor R5 and the fifth resistor R5 are connected in series. One end of the power supply VCC is connected between the fourth resistor R4 and the fifth resistor R5, and the other end of the power supply VCC is connected between the sixth resistor R6 and the resistor R PT .

[0006] Further, the three-wire measurement circuit comprises a first resistor R1, a second resistor R2, a third resistor R3, a first inductor L1, a second inductor L2, a third inductor L3 and a thermistor R t . The first resistor R1, the second resistor R2 and the third resistor R3 are connected in parallel with each other. The thermistor R t is connected in series with the first resistor R1 and the first inductor L1, the second resistor R2 is connected in series with the second inductor L2, and the third resistor R3 is connected in series with the third inductor L3.

[0007] A life test method of a semiconductor laser linear array, the life test method uses a life test device to test the life of the semiconductor laser linear array, and comprises the following steps: Taking junction temperature and working current as acceleration stress, a plurality of stress level groups higher than the rated condition are set, a decay percentage is set, and the decay percentage of the light power decay to the initial value is taken as the failure criterion for life termination; According to each stress level group, the semiconductor laser linear array is subjected to accelerated aging test, and the sequence data of the light power decay with time under each stress level group is collected periodically; The exponential degradation function is used to fit the sequence data of the light power decay over time, and the degradation rate constant corresponding to each stress level group is obtained; A joint acceleration model is constructed, and the joint acceleration model is used to represent the functional relationship between the degradation rate constant and the junction temperature and the working current; The degradation rate constant, the junction temperature and the working current corresponding to each stress level group are taken as inputs, and the joint acceleration model is regressed and fitted to generate a fitted joint acceleration model; The rated working current and the rated junction temperature of the semiconductor laser linear array are substituted into the fitted joint acceleration model to calculate the degradation rate constant under the rated working condition; According to the degradation rate constant and the failure criterion, the exponential degradation function is used to calculate the predicted lifetime of the semiconductor laser linear array under the rated condition.

[0008] Further, a plurality of stress level groups higher than the rated condition are set, including: At least two different working current levels are set, wherein the highest working current level in the different working current levels is not less than 1.2 times the rated working current; At least two different junction temperature levels are set, wherein the highest junction temperature level in the different junction temperature levels is not less than 25°C higher than the rated junction temperature; The different working current levels and the different junction temperature levels are combined to form different stress level groups.

[0009] Further, the exponential degradation function is used to fit the sequence data of the light power decay over time, and the degradation rate constant corresponding to each stress level group is obtained, including: the degradation rate constant of each stress level group is calculated respectively: Based on the sequence data, the time t is taken as the independent variable, and the natural logarithm ln(P(t)) of the light power P(t) is taken as the dependent variable, and linear regression is performed; The absolute value of the slope of the straight line generated by linear regression is taken as the degradation rate constant of the current stress level group.

[0010] Further, a joint acceleration model is constructed, including: β = A×I^m×exp(-Ea / (k×T)), wherein β is the degradation rate constant, I is the working current, T is the junction temperature, A is a constant term, m is a current acceleration factor, Ea is the activation energy, and k is the Boltzmann constant.

[0011] Further, it also includes: After the predicted lifetime is calculated, the lifetime of the semiconductor laser linear array in the working state is dynamically adjusted, including the following steps: In actual use, multi-dimensional operating parameters of the semiconductor laser linear array are collected in real time, and the multi-dimensional operating parameters at least include operating current, operating voltage, output optical power, heat sink temperature, center wavelength, spectral width and characteristic noise energy; According to the multi-dimensional operating parameters, a health feature vector containing electrical, optical and thermal characteristics is calculated; The health feature vector is input into a pre-trained life prediction fusion model, and the life prediction fusion model outputs a current health state estimation value and a remaining life prediction value of the semiconductor laser linear array according to the input health feature vector; According to the multi-dimensional operating parameters and the corresponding health feature vector, a parameter estimation algorithm is used to dynamically adjust the parameters of the life prediction fusion model, so that the prediction output of the model matches the actual degradation process of the semiconductor laser linear array, and an adjusted life prediction fusion model is obtained. Based on the adjusted life prediction fusion model, an updated remaining life prediction value and a confidence interval are output.

[0012] Further, the multi-dimensional operating parameters of the semiconductor laser linear array are collected in real time, including: The operating current, operating voltage, output optical power and heat sink temperature of the semiconductor laser linear array are collected in real time; The spectral data and / or noise spectrum data of the operating voltage of the semiconductor laser linear array are collected in real time; The center wavelength and spectral width are extracted from the spectral data, and the characteristic noise energy is extracted from the noise spectrum data.

[0013] Further, the health feature vector containing electrical, optical and thermal characteristics is calculated, including: The differential resistance is calculated based on the operating current and the operating voltage; The slope efficiency is calculated based on the output optical power and the operating current; The junction temperature is calculated based on the heat sink temperature and the operating voltage through a thermal model; The differential resistance, the slope efficiency, the junction temperature and the output optical power are combined to generate the health feature vector.

[0014] Compared with the prior art, the above at least one technical solution adopted by the embodiments of the present specification can achieve at least the following beneficial effects: The life evaluation device for the semiconductor laser linear array improves the reliability evaluation efficiency and the accuracy of life prediction of the high-power semiconductor laser array. BRIEF DESCRIPTION OF DRAWINGS

[0015] To more clearly illustrate the technical solutions of the embodiments of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0016] Figure 1 This is an overall structural diagram of the semiconductor laser linear array lifetime assessment device according to an embodiment of the present invention; Figure 2 This is a connection diagram of the semiconductor laser linear array lifetime assessment device according to an embodiment of the present invention; Figure 3 This is a schematic diagram of the power supply circuit according to an embodiment of the present invention; Figure 4 This is a schematic diagram of the filter circuit according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the integrated communication module according to an embodiment of the present invention; Figure 6 This is a schematic diagram of a three-wire measurement circuit according to an embodiment of the present invention; Figure 7 This is a schematic diagram of the bridge temperature measurement circuit according to an embodiment of the present invention; Figure 8 This is a schematic diagram of the bridge temperature measurement circuit according to an embodiment of the present invention; Figure 9 This is a flowchart illustrating the usage method of the life assessment device according to an embodiment of the present invention.

[0017] The attached diagram is labeled as follows: 1. Assessment node module; 2. Multi-channel drive module; 3. Water cooling module; 4. Integrated communication module; 5. Industrial computer and display. Detailed Implementation

[0018] The embodiments of this application will now be described in detail with reference to the accompanying drawings.

[0019] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0020] like Figure 1 and Figure 2 As shown, the semiconductor laser linear array testing device consists of a testing node module 1, a multi-channel driving module 2, a water-cooling module 3, an integrated communication module 5, an industrial control computer, and a display 5.

[0021] Multiple assessment node modules 1 are connected in parallel. Each assessment node module 1 includes a temperature measurement component and an optical power monitoring component. The assessment node module 1 is used to monitor and collect temperature and laser output data. The examination node module 1, the multi-channel drive module 2 and the water cooling module 3 are electrically connected with the integrated communication module 4, and the integrated communication module 4 is electrically connected with the industrial computer and the display 5.

[0022] The multi-channel drive module 2 is electrically connected with the examination node module 1, and is used for driving each channel of the semiconductor laser linear array according to the set current; the waterway system of the water cooling module 3 is arranged at the periphery of the examination node module 1 and is used for cooling the examination node module 1; the integrated communication module 4 is used for transmitting the data collected by the examination node module 1, the multi-channel drive module 2 and the water cooling module 3 to the industrial computer and the display 5 after preprocessing, and the industrial computer and the display 5 are used for performing life examination analysis on the data collected by the examination node module 1. Meanwhile, the current and water temperature of the multi-channel drive module 2 and the water cooling module 3 are set.

[0023] (1) Examination node module.

[0024] The semiconductor laser linear array life examination device contains six examination node modules, each of which includes an optical power monitoring component, a semiconductor laser linear array to be examined and a temperature measurement component. In the optical power component, the optical power meter probe has an inner diameter of Φ120mm, can withstand a wavelength range of 600-1100nm, a large divergence angle and can withstand a maximum laser power of ≤2200W, and is transmitted to the integrated communication module through RS232. The semiconductor laser linear array to be examined is installed in a specially designed examination platform, and cooling water is used to maintain its working temperature to prevent the linear array module from overheating and being damaged. At the same time, the examination stress can also be applied by adjusting the water temperature.

[0025] The examination node module 1 includes a temperature measurement component and an optical power monitoring component.

[0026] The temperature measurement component is an important part of the semiconductor laser linear array examination device, and the temperature measurement component needs to precisely measure multiple temperature signals at the same time. Due to the limitation of system space, existing temperature measurement transmitters and other instruments cannot meet the requirements, so a self-made temperature measurement component is adopted to realize real-time monitoring of multiple temperature signals.

[0027] The optical power monitoring component adopts a special thermocouple power meter, which can accurately convert the temperature change caused by laser power into an analog voltage, and after processing, filtering and amplification by a precision circuit, it is converted into a digital quantity by AD, and after calibration, it is the actual power value. The value is collected and processed by the computer in real time, and the power changes of the six nodes are monitored and recorded.

[0028] The temperature measurement component mainly includes a microprocessor, a power supply circuit, a filter circuit, a three-wire measurement circuit and a bridge temperature measurement circuit. The working principle of each part of the circuit is introduced below.

[0029] like Figure 3 As shown, the power supply is input to the filter circuit, which outputs a 12V voltage. The 12V voltage is then input to the power supply circuit, which is connected to the three-wire measurement circuit. The three-wire measurement circuit is connected to the bridge temperature measurement circuit and then to the integrated communication module 4. At the same time, the power supply circuit supplies power to the integrated communication module 4.

[0030] The Cortex-M3 microprocessor is the core processor MCU of the entire embedded hardware design. It adopts extended single-cycle multiply-accumulate MAC instructions, optimized SIMD operations and saturation operation instructions, and has real-time processing and excellent digital peripheral control capabilities. It is a high-performance, low-power MCU commonly used in the field of industrial control.

[0031] like Figure 4 As shown, the power supply circuit is responsible for providing a stable, low-noise power supply to the entire module, and its performance directly determines the accuracy, stability, and anti-interference capability of temperature measurement.

[0032] The power supply circuit is a two-stage power supply architecture that generates 5V and 3.3V outputs from a 12V input. 1. The 12V voltage is converted to 5V by the synchronous buck switching regulator chip. High efficiency is its core advantage, which can reduce module heat generation.

[0033] 2. The inherent switching noise (tens of kHz to MHz) of the switching power supply is one of the main sources of interference for analog temperature measurement circuits (especially high-precision ADCs and sensor power supplies). Therefore, the 5V output from this switch should never be used directly as a power supply for high-precision analog circuits; it must undergo subsequent processing.

[0034] 3. The 5V output from the first stage is converted to a clean, low-noise 3.3V. A low-dropout linear regulator (LDO) is used, whose high ripple rejection ratio (PSRR) and low noise are its core advantages. It is specifically designed to provide an ultra-clean and stable power supply for high-precision analog front-end circuits such as ADCs, avoiding measurement errors caused by switching noise.

[0035] like Figure 5 As shown, this is the power input and pre-stage protection and filtering circuit section of the multi-channel temperature measurement module. It is directly connected to the switching power supply (TPS5430), forming a complete power supply link. The subsequent circuit has a large number of filter capacitors, which are equivalent to a short circuit at power-on, generating a huge inrush current. This circuit achieves a soft-start function through the slow conduction of MOSFETs, limiting the current charging the capacitors, protecting the fuses and input terminals, and preventing a sudden drop in power supply voltage. At the same time, it ensures a smooth power supply establishment in the subsequent stage, preventing the microcontroller from resetting or malfunctioning due to drastic voltage fluctuations.

[0036] Figure 6 The core of the isolation RS485 communication module adopts the ISO3088 isolation transceiver chip of TI, which integrates signal and power isolation functions (supports 2500V RM Isolation voltage), which can effectively cut off the ground loop and suppress common-mode interference and transient surges in industrial environments. The circuit is equipped with a 120Ω terminal matching resistor (optimizes long-distance signal reflection), BAS16HTVS diode (protects ESD static electricity), and ensures the stability of the bus idle state through pull-up / pull-down resistors R3 / R9. The module supports half-duplex communication and is compatible with 3.3V / 5V logic levels, suitable for industrial control, power monitoring, and other strong interference scenarios, with high anti-interference and communication reliability.

[0037] Thermal resistance sensor is a temperature sensor whose resistance value changes with the change of environmental temperature. The thermal resistance made of platinum is widely used due to its good stability, high precision, and large temperature measurement range. PT1000 is a commonly used platinum resistance for precise temperature measurement, with stable performance and good linearity. PT1000 represents a resistance of 1000 ohms at 0°C, and a resistance of about 2120.515 ohms at 300°C, which increases linearly with temperature. The sensitivity of PT1000 thermal resistance is about 0.38Ω / ℃. To reduce the influence of the line resistance of the connecting wire on the measurement results, and to eliminate the measurement error caused by the resistance of the connecting wire, a three-wire bridge method is used for measurement.

[0038] Thermal resistance as a bridge arm resistance of the bridge, its connecting wire also becomes part of the bridge arm resistance, which is unknown and changes with the environmental temperature, causing measurement error. Using three-wire system, one end of the wire is connected to the power supply end of the bridge, and the other two wires are connected to the bridge arm where the thermal resistance is located and the adjacent bridge arm, which eliminates the measurement error caused by the wire line resistance. The measurement accuracy is higher.

[0039] As Figure 8 shown, the three-wire measurement circuit includes R1, R2, R3, L1, L2, L3 and R t . R t is connected in series with R1 and L1, R2 is connected in series with L2, R3 is connected in series with L3, and R1, R2 and R3 are in parallel relationship.

[0040] The three-wire connection method requires that the three wires have the same material, diameter, and length, and the same working temperature, so that the resistance values of the three wires are the same at any environmental temperature, i.e. RL1=RL2=RL3. Ideally, by measuring the voltage across R1, the influence of the wire resistance RL can be eliminated.

[0041] The accuracy of the temperature measurement module is related to not only the temperature sensor, but also the temperature measurement circuit. PT1000 is a resistance temperature sensor, and the essence of temperature measurement is to measure the resistance of the sensor. Usually, the resistance is converted into an electrical signal such as voltage or current for measurement. Generally, PT1000 uses a Wheatstone bridge for temperature measurement. The Wheatstone bridge uses the change of resistance value to measure the change of physical quantity, and is a three-wire implementation method with high precision.

[0042] As shown in Figure 7 , the bridge circuit is composed of four resistors R4, R5, R6 and R PT . Among them, R4 and R PT are connected in series, R5 and R6 are connected in series, a power supply VCC is connected between one diagonal, and a high-precision differential ADC measures the voltage difference VBD between the other diagonal. The resistance values of R4, R5 and R6 are fixed, and R PT is the resistance value of PT1000. When the measured temperature changes, the resistance value of R PT will change. The voltage difference between the two arms of the bridge is measured by a high-precision differential ADC to obtain the voltage VBD across the resistor. The resistance of the thermistor is obtained by calculation, and the current temperature is obtained.

[0043] According to Ohm's law, the voltage value across each resistor can be calculated. In the bridge arm where R5 and R6 are located, R5 and R6 divide the voltage VCC, and the voltage across R6 is V1; in the bridge arm where R4 and RPT are located, R4 and R PT divide the voltage VCC, and the voltage across R4 is V2. The values of V1 and V2 are calculated by Ohm's law as follows: The current I1 flowing through resistors R5 and R6 is:

[0044] The voltage V1 across R6 is:

[0045] The current I2 flowing through resistors R4 and R PT is:

[0046] The voltage V2 across R4 is:

[0047] The value of V BD is the voltage difference between V1 and V2:

[0048] From the above reasoning, when R PT VBD will also change when the change occurs. The change of this voltage value is converted into digital quantity by AD conversion and sent into the main controller, and then the current actual temperature value can be obtained according to the resistance-temperature corresponding table of PT1000 by table lookup method.

[0049] (2) Multi-channel drive module.

[0050] The driving of the semiconductor laser linear array is performed by the multi-channel drive module 2, and the drive current value is loaded according to the set parameters (rate, current, etc.), and the driver works. At the same time, the current sensor is used to monitor the current value in real time, and the alarm processing is performed in time when the abnormality is found.

[0051] It mainly consists of PFC module, DC-DC module, digital communication module and other parts, adopts the technical scheme of front-stage PFC and rear-stage DC converter, and after EMI filtering, the three-phase three-wire AC 380V is input into the three-phase three-level PFC circuit to obtain a bus voltage of about 700V, and finally the DC-DC conversion circuit is used to realize the output of DC 170V (30A), which can be adaptively adjusted according to the working current requirement of the linear array, and provides an important guarantee for the normal work of the linear array. It is used to drive multiple lasers at the same time, provides a stable current source, and ensures the normal work of the semiconductor laser linear array during the test. Under the control of the industrial computer, the semiconductor laser linear array is driven to work according to the set current parameters, and the speed and size of the applied current are controlled to ensure that it works within the rated range and is consistent with the actual working condition. The current working state information is transmitted to the computer in real time.

[0052] (3) Water cooling module.

[0053] The examination of the semiconductor laser linear array is a high-power photoelectric system, which needs to cool the optical power monitoring components, semiconductor laser linear array modules and the like to ensure that the heat can be dissipated in real time and prevent damage to the components. The cooling method adopts water cooling, which is cooled by high-flow constant temperature cooling water. In order to prevent cooling water leakage, delayed cooling and other abnormalities, the system uses temperature sensors and flow sensors to monitor the cooling water in real time, and stops in time when abnormality occurs.

[0054] The water cooling module mainly consists of a refrigeration unit, a water system and a control unit, which provides refrigeration for the linear array through secondary water circulation. The refrigeration water circulation can achieve a flow rate of ≥15 L / min, a rated refrigeration capacity of ≥4.5 kW, and a water temperature control accuracy of ±0.1℃, ensuring effective heat dissipation during the operation of the linear array and maintaining the temperature at (20±1)℃. Each test node in the device is connected to a water cooling node, which is responsible for providing cooling water to remove the heat generated by the power monitoring components and semiconductor laser linear array during operation. The water cooling module consists of two water cooling machines, each responsible for 3 groups of test nodes. The integrated thermoelectric cooler (TEC) and temperature sensor monitor and adjust the operating temperature of the laser linear array in real time, ensuring a stable temperature environment for the laser linear array during testing and avoiding performance changes due to temperature fluctuations.

[0055] (4) Integrated communication module.

[0056] Responsible for monitoring the power and temperature information of all nodes through RS232 and RS485 communication structure, and transferring the preprocessed information to the industrial computer. The working status of each laser channel is recorded by a high-speed data acquisition card, and the software is used for life prediction and analysis, providing real-time life curve and statistical data.

[0057] (5) Industrial computer and display.

[0058] Receive current state information from the multi-channel drive module, analyze and process, and alarm and handle in time when abnormal. Real-time acquisition of linear array temperature, cooling water temperature and flow information, processed and monitored by industrial computer, alarmed in time when abnormal, stopped driving current output to prevent semiconductor laser linear array from high temperature damage. The system has a fault warning function, if a laser channel occurs abnormality (such as power attenuation or current abnormality) during testing, the system will automatically send an alarm signal and record the abnormal information for subsequent analysis.

[0059] As shown in Figure 9 , first, before the device is put into use, the following preparations need to be completed: check the semiconductor laser linear array life test device, fill the water tank of the water cooling machine with water; (1) Start the external circulation water; (2) Close the power switch, the "power" indicator light on the system front panel is on, the system is powered on normally; (3) Install the linear array water supply base, install the fixed base of the linear array to be tested on the platform at the corresponding position of the laser power meter in the device, which is divided into A-type linear array base and B-type linear array base, fastened with 2 M4*10 bolts, and then connect the M10*6.5mm inlet and outlet water pipes of the fixed base; (4) Load the linear array, fasten the linear array symmetrically on the loading platform with 4 M3*6 bolts; (5) The linear array lead wire is connected to the test system through the terminal, the red wire is the positive electrode, and the black wire is the negative electrode; (6) The thermocouple wire is fixed on the linear array by the clamp, and the height of the positioning pin of the loading platform is adjusted to align the linear array with the center position of the laser power meter; (7) Press the "power on" button, and after the "water cooler", "LD drive source" and "control system" indicator lights are all on, the power of each component is turned on; (8) Press the "on / off" button to turn on the computer; (9) Start the "semiconductor laser linear array test system" software; (10) Parameter setting: 1) Semiconductor laser linear array: input the linear array number to be tested, set the sampling interval and test duration, and click save to complete the setting; 2) LD drive source parameters: set the working current to 20A according to the parameters of the linear array to be tested, the current rate is 1A / S, the current upper limit is 30A, and the voltage upper limit is 170V, after setting each item, click the "set LD" button, and after receiving the prompt, the setting is completed. 3) Alarm parameter setting: set the water temperature upper limit to 75℃, the flow lower limit to 10L / min, and the linear array temperature to 75℃, this parameter is the monitoring parameter of the system, when the water flow is too small or the linear array temperature is too high, it is considered as system abnormality, and the system will stop and alarm, which needs manual intervention; 4) Water cooler parameters: water cooler 1, 25℃, water cooler 2, 25℃, the minimum control precision is 0.1℃; after the parameter setting is completed, click save to take effect.

[0060] (11) Click the "start test" button, and the laser linear array test system starts running and real-time monitors the system parameters such as current, voltage, cooling water and power, and alarms when an abnormality is found; (12) Click the "start saving" button to start the data storage task and automatically save the data, the sampling interval and saving time are controlled by the setting parameters; (13) Click the "stop test" button to stop the system running; (14) Remove the linear array lead wire; Remove the linear array, repeat the above steps to complete the test of the remaining linear arrays.

[0061] In an embodiment of the present application, a semiconductor laser linear array life test method uses a life test device to test the life of a semiconductor laser linear array, including the following steps: The junction temperature and working current are used as acceleration stress, a plurality of stress level groups higher than the rated condition are set, the decay percentage is set, and the decay percentage of the light power decay to the initial value is used as the failure criterion for the end of life; According to each stress level group, the semiconductor laser linear array is subjected to accelerated aging test, and the sequence data of light power decay over time under each stress level group is collected periodically; The sequence data of light power decay over time is fitted by using an exponential degradation function to obtain the degradation rate constant corresponding to each stress level group. A joint acceleration model is constructed, and the joint acceleration model is used to represent the functional relationship between the degradation rate constant and the junction temperature and the operating current. The degradation rate constant, the junction temperature and the operating current corresponding to each stress level group are taken as inputs to regress and fit the joint acceleration model to generate a fitted joint acceleration model. The rated operating current and the rated junction temperature of the semiconductor laser linear array are substituted into the fitted joint acceleration model to calculate the degradation rate constant under the rated operating condition. According to the degradation rate constant and the failure criterion, the exponential degradation function is used to calculate the predicted life of the semiconductor laser linear array under the rated condition.

[0062] Specifically, a plurality of stress level groups higher than the rated condition are set, including: At least two different operating current levels are set, wherein the highest operating current level in the different operating current levels is not less than 1.2 times the rated operating current; at least two different junction temperature levels are set, wherein the highest junction temperature level in the different junction temperature levels is not less than 25°C higher than the rated junction temperature; the different operating current levels and the different junction temperature levels are combined to form different stress level groups. The specific quantitative relationship of the stress level is proposed, and the effectiveness condition of the accelerated test is provided.

[0063] Specifically, the sequence data of light power decay over time is fitted by using an exponential degradation function to obtain the degradation rate constant corresponding to each stress level group, including: Based on the sequence data, time t is taken as the independent variable, and the natural logarithm ln(P(t)) of the light power P(t) is taken as the dependent variable, linear regression is performed; the absolute value of the slope of the straight line generated by linear regression is taken as the degradation rate constant of the current stress level group.

[0064] Exponential fitting is realized by logarithmic transformation and linear regression.

[0065] Specifically, the joint acceleration model is constructed, including: β = A x I^m x exp(-Ea / (k x T)), where β is the degradation rate constant, I is the operating current, T is the junction temperature, A is a constant term, m is the current acceleration factor, Ea is the activation energy, and k is the Boltzmann constant. Regression fitting of the joint acceleration model is a process of solving the parameters A, m, and Ea. The function relationship between the degradation rate constant and the junction temperature and the operating current is represented by a physical and mathematical model (inverse power law-Arrhenius mixed model).

[0066] In another embodiment of the present application, after the predicted lifetime is calculated, the lifetime of the semiconductor laser line array in the working state is dynamically adjusted, including the following steps: In actual use, the multi-dimensional operating parameters of the semiconductor laser line array are collected in real time, including at least operating current, operating voltage, output optical power, heat sink temperature, center wavelength, spectral width, and characteristic noise energy; According to the multi-dimensional operating parameters, a health feature vector containing electrical, optical, and thermal characteristics is calculated; The health feature vector is input into the pre-trained lifetime prediction fusion model, and the lifetime prediction fusion model outputs the current health state estimate and the remaining lifetime prediction value of the semiconductor laser line array according to the input health feature vector; According to the multi-dimensional operating parameters and the corresponding health feature vector, a parameter estimation algorithm is used to dynamically adjust the parameters of the lifetime prediction fusion model, so that the prediction output of the model matches the actual degradation process of the semiconductor laser line array, and an adjusted lifetime prediction fusion model is obtained; Based on the adjusted lifetime prediction fusion model, an updated remaining lifetime prediction value and a confidence interval are output.

[0067] The dynamic adjustment method continuously outputs the current remaining lifetime estimate of a specific laser line array. This makes the lifetime prediction change from an offline analysis tool in the laboratory to the core of an online health management system, with high real-time and practicality.

[0068] By collecting and fusing multi-dimensional data such as electrical (current, voltage), optical (optical power, spectrum), thermal (temperature), and even acoustic / electrical features (noise spectrum), a comprehensive health feature vector is constructed. This is more comprehensive and profound than models that rely solely on the optical power single parameter, and can more accurately reflect the true health status of the device and reduce false positives. Through the parameter estimation algorithm, the internal parameters of the prediction model are dynamically adjusted, so that the model can continuously learn and adapt to the individual degradation trajectory and environmental changes of the monitored device. This overcomes the prediction bias caused by process dispersion, individual differences, or fluctuations in working conditions, and achieves accurate prediction.

[0069] The output is presented as a confidence interval in the form of a probability distribution, rather than a single, definitive value. This provides a measure of the reliability of the prediction results, supporting risk-based scientific decision-making (such as early warning when the lower limit of the confidence interval reaches a maintenance threshold), thus enhancing the scientific validity and decision support value of the prediction results.

[0070] Parameters such as spectral characteristics (center wavelength shift, spectral broadening) and characteristic noise energy are introduced. These are often sensitive early indicators of failure mechanisms such as the growth of microscopic defects inside the laser and the degradation of the cavity surface. Their changes may occur earlier than the significant decay of optical power.

[0071] Specifically, the multi-dimensional operating parameters of the semiconductor laser linear array are acquired in real time, including: The system acquires real-time data on the operating current, operating voltage, output optical power, and heat sink temperature of a semiconductor laser linear array; it also acquires real-time spectral data and / or noise spectrum data of the operating voltage of the semiconductor laser linear array; the system extracts the center wavelength and spectral width from the spectral data, and characteristic noise energy from the noise spectrum data. By introducing high-dimensional information such as spectra and noise, which can more sensitively reflect the internal degradation mechanisms of the device (such as cavity surface degradation and defect growth), the system improves the earlyness and accuracy of predictions.

[0072] Furthermore, a health feature vector containing electrical, optical, and thermal characteristics is calculated, including: The differential resistance is calculated based on the operating current and operating voltage; The slope efficiency is calculated based on the output optical power and the operating current. The junction temperature is calculated using a thermal model based on the heat sink temperature and operating voltage. The differential resistance, slope efficiency, junction temperature, and output optical power are combined to generate a healthy feature vector.

[0073] Beneficial effects of the embodiments of the present invention: The semiconductor laser linear array life examination device can simultaneously test the life of multiple laser channels, improves the test efficiency; the user can set the current and water temperature through the parameter setting of the man-machine interface, and can collect the reading of the power meter in real time, realize the life examination of the semiconductor laser linear array; the man-machine interface can record data in real time, and save it into an EXCEL openable document format, realize the analysis of the laser aging life trend; can alarm when the water temperature, water flow and temperature are abnormal, can allow the user to manually stop, avoid the damage caused by the high temperature to the examination device; and through the accurate temperature control and data acquisition, the accuracy and stability of the test are improved. The system is suitable for various semiconductor lasers, especially the life examination of high-power laser linear array devices; the life examination method of the embodiment successfully solves the core problems of low efficiency, lack of quantitative standard and inaccurate extrapolation in the reliability evaluation of high-power semiconductor laser linear array, provides a systematic methodology with important engineering application value and industry promotion significance for product reliability design, production quality control and next-generation intelligent prediction.

[0074] The above is only a specific embodiment of the present application, and cannot limit the scope of the application. Therefore, the replacement of equivalent components or equivalent changes and modifications made within the scope of the present application should still fall within the scope of the present patent. In addition, the technical features in the present application can be freely combined with each other, and the technical features can be freely combined with each other.

Claims

1. A lifespan assessment device for a semiconductor laser linear array, characterized in that, include: The assessment node module (1), multi-channel drive module (2), water cooling module (3), integrated communication module (4), and industrial computer and display (5); Multiple assessment node modules (1) are connected in parallel. Each assessment node module (1) includes a temperature measurement component and an optical power monitoring component. The assessment node module (1) is used to collect and monitor temperature and laser output data. The assessment node module (1), the multi-channel drive module (2), and the water-cooling module (3) are all electrically connected to the integrated communication module (4), and the integrated communication module (4) is electrically connected to the industrial control computer and the display (5). The multi-channel driving module (2) is electrically connected to the assessment node module (1), and the multi-channel driving module (2) is used to drive each channel of the semiconductor laser array according to the set current. The water cooling module (3) has a water system set around the assessment node module (1) and is used to cool the assessment node module (1). The integrated communication module (4) is used to transmit the preprocessed data collected by the assessment node module (1), the multi-channel drive module (2) and the water-cooling module (3) to the industrial computer and display (5). The industrial computer and display (5) are used to perform life assessment analysis on the data collected by the assessment node module (1), and at the same time realize the data acquisition and setting of the multi-channel drive module (2) and the water-cooling module (3). The multi-channel drive module (2) is used to supply power to the semiconductor laser array to be assessed. The water-cooling module (3) is used to dissipate heat from the semiconductor laser array to be assessed and the assessment node module, and at the same time realize temperature control.

2. The life assessment device according to claim 1, characterized in that, The temperature measurement component includes a power supply circuit, a filter circuit, a three-wire measurement circuit, and a bridge temperature measurement circuit. The power supply is input to the filter circuit, and the filter circuit outputs a 12V voltage. The 12V voltage is input to the power supply circuit. The power supply circuit is connected to the three-wire measurement circuit. The three-wire measurement circuit is connected to the bridge temperature measurement circuit and then connected to the integrated communication module (4). The bridge temperature measurement circuit includes a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, and a resistor R. PT ; The fourth resistor R4 and the resistor R PT The fifth resistor R5 is connected in series with the fifth resistor R5; One end of the power supply VCC is connected between the fourth resistor R4 and the fifth resistor R5, and the other end of the power supply VCC is connected between the sixth resistor R6 and the resistor R... PT between.

3. The life assessment device according to claim 2, characterized in that, The three-wire measurement circuit includes a first resistor R1, a second resistor R2, a third resistor R3, a first inductor L1, a second inductor L2, a third inductor L3, and a thermistor R. t ; The first resistor R1, the second resistor R2, and the third resistor R3 are connected in parallel. The thermistor R t The first resistor R1 and the first inductor L1 are connected in series, the second resistor R2 is connected in series with the second inductor L2, and the third resistor R3 is connected in series with the third inductor L3.

4. A method for lifetime assessment of a semiconductor laser linear array, wherein the lifetime assessment method utilizes the lifetime assessment device described in any one of claims 1 to 3 to assess the lifetime of the semiconductor laser linear array, characterized in that, Includes the following steps: Using junction temperature and operating current as accelerating stress, multiple stress level groups higher than rated conditions are set, attenuation percentage is set, and the attenuation percentage of optical power attenuating to the initial value is used as the failure criterion for the end of life. Accelerated aging tests were performed on the semiconductor laser linear array according to each stress level group, and the sequence data of optical power decay over time under each stress level group were periodically collected. The degradation rate constant corresponding to each stress level group is obtained by fitting the sequential data of optical power decay over time using an exponential degradation function. A joint acceleration model is constructed, which is used to characterize the functional relationship between the degradation rate constant and the junction temperature and the operating current; Using the degradation rate constant, junction temperature and operating current corresponding to each stress level group as inputs, regression fitting is performed on the joint acceleration model to generate the fitted joint acceleration model. Substituting the rated operating current and rated junction temperature of the semiconductor laser array into the fitted joint acceleration model, the degradation rate constant under rated operating conditions is calculated. Based on the degradation rate constant and the failure criterion, the predicted lifetime of the semiconductor laser linear array under rated conditions is calculated using the exponential degradation function.

5. The lifespan assessment method according to claim 4, characterized in that, Set multiple stress level groups that exceed the rated conditions, including: At least two different operating current levels are set, wherein the highest of the different operating current levels is not less than 1.2 times the rated operating current; At least two different junction temperature levels are set, wherein the highest of the different junction temperature levels is not lower than the rated junction temperature by 25°C; Different levels of operating current and junction temperature are combined to form different stress level groups.

6. The lifespan assessment method according to claim 4, characterized in that, The degradation rate constant for each stress level group is obtained by fitting the time-varying sequence data of the optical power using an exponential degradation function, including: calculating the degradation rate constant for each stress level group respectively. Based on the sequence data, a linear regression was performed with time t as the independent variable and the natural logarithm of optical power P(t) ln(P(t)) as the dependent variable. The absolute value of the slope of the straight line generated by linear regression is used as the degradation rate constant for the current stress level group.

7. The lifespan assessment method according to claim 4, characterized in that, Construct a joint acceleration model, including: β = A×I^m×exp(-Ea / (k×T)), where β is the degradation rate constant, I is the operating current, T is the junction temperature, A is a constant term, m is the current acceleration factor, Ea is the activation energy, and k is the Boltzmann constant.

8. The lifespan assessment method according to claim 4, characterized in that, Also includes: After calculating the predicted lifetime, the lifetime of the semiconductor laser linear array in operation is dynamically adjusted, including the following steps: Under actual operating conditions, the multi-dimensional operating parameters of the semiconductor laser array are collected in real time. The multi-dimensional operating parameters include at least the operating current, operating voltage, output optical power, heat sink temperature, center wavelength, spectral width, and characteristic noise energy. Based on the multidimensional operating parameters, a health feature vector containing electrical, optical, and thermal characteristics is calculated; The health feature vector is input into a pre-trained lifetime prediction fusion model, which outputs the current health status estimate and remaining lifetime prediction value of the semiconductor laser array based on the input health feature vector. Based on the multidimensional operating parameters and the corresponding health feature vector, the parameters of the lifetime prediction fusion model are dynamically adjusted using a parameter estimation algorithm so that the model's predicted output matches the actual degradation process of the semiconductor laser array, thus obtaining the adjusted lifetime prediction fusion model. Based on the adjusted lifetime prediction fusion model, the updated remaining lifetime prediction value and confidence interval are output.

9. The lifespan assessment method according to claim 8, characterized in that, Real-time acquisition of multi-dimensional operating parameters of the semiconductor laser linear array, including: The operating current, operating voltage, output optical power, and heat sink temperature of the semiconductor laser linear array are collected in real time. Real-time acquisition of spectral data of the semiconductor laser linear array and / or noise spectrum data of the operating voltage; The center wavelength and spectral width are extracted from the spectral data, and the characteristic noise energy is extracted from the noise spectrum data.

10. The lifespan assessment method according to claim 8, characterized in that, The calculated health feature vector includes electrical, optical, and thermal characteristics, including: Based on the operating current and operating voltage, the differential resistance is calculated; Based on the output optical power and operating current, the slope efficiency is calculated. Based on the heat sink temperature and operating voltage, the junction temperature is calculated using a thermal model. The health feature vector is generated by combining the differential resistance, the slope efficiency, the junction temperature, and the output optical power.

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