Novel high-integration packaging IPM module and manufacturing method thereof

Abstract

The invention discloses a novel high-integration packaging IPM module and a manufacturing method. A copper bottom plate, a ceramic substrate, a power semiconductor device, a PCB driving plate and a plastic cover plate are arranged from bottom to top in a layering and transverse extending mode. The internal PIN is longitudinally and fixedly arranged on the upper layer of the ceramic substrate, the upper end part of the internal PIN is in interference fit connection with the PCB driving board, and the power semiconductor device and the PCB driving board form a first interval arrangement space along the height of the internal PIN in the longitudinal direction; external PINs are longitudinally and fixedly arranged on the upper layer of the PCB drive board, control pins are formed at the upper ends of the external PINs, and the plastic cover board and the PCB drive board form a second interval arrangement space in the longitudinal direction along the heights of the external PINs. According to the integrated intelligent power module, the power semiconductor device and the PCB driving board are integrated in the same packaging body, the integration degree is higher, connection is more reliable, and heat dissipation is better.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of power electronic power devices, in particular to a novel high-integration packaging IPM module and a manufacturing method. BACKGROUND

[0002] In the technical field of power electronic power devices, intelligent power modules (IPM) are integrated devices that combine power semiconductor devices (such as IGBT) with drive circuits and protection circuits. Due to their small size and high reliability, IPM has been widely used in the field of power electronics, and is suitable for medium and high voltage power conversion scenarios such as frequency converters, new energy vehicle electronic control systems, and industrial inverters.

[0003] There are various IPM modules with different packaging forms in the industry. IPM modules are soldered to PCB boards through module pins. The typical structure of IPM modules is that IGBT chips are connected to independent drive PCB boards through wire bonding, and the drive PCB boards and IGBT chips are placed in different areas in the packaging body. Signal and power transmission are realized through wires or connectors.

[0004] However, the prior art has the following defects: 1. Low connection reliability: Traditional IPM modules need to be soldered to PCB boards twice, which is prone to internal component damage, poor solder quality, and mechanical damage caused by thermal stress, which affects the surrounding components. In existing IPM modules, IGBT chips and drive PCB boards rely on wire bonding or metal wire connections. Long-term work is affected by vibration and temperature cycling, which is prone to bonding point detachment and wire fatigue fracture, resulting in module failure.

[0005] 2. Poor heat dissipation efficiency: IGBT chips generate a large amount of heat when working, and drive chips, resistors and other components on the drive PCB board also generate heat. The heat dissipation paths of the two are independent and prone to mutual superposition, resulting in excessive local temperature in the packaging body and reducing the module life.

[0006] 3. Significant EMI interference: The transmission path of the drive signal from the PCB drive board to the IGBT chip is long and is easily affected by external electromagnetic interference. At the same time, the high-frequency noise generated during the IGBT switching process also interferes with the drive circuit, affecting control accuracy.

[0007] 4. High assembly complexity: IGBT chips, drive PCB boards, heat dissipation substrates and other components need to be assembled separately, which has many processes, poor consistency and high production cost.

[0008] Therefore, there is an urgent need for an integrated IPM module with higher integration, more reliable connection and better heat dissipation to solve the above technical problems. SUMMARY

[0009] The application aims to provide a novel high-integration packaging IPM module, which solves the defects of the prior art, simplifies the connection structure, improves the connection reliability, optimizes the heat dissipation path, improves the performance, suppresses EMI interference, improves the module production consistency and cost advantage.

[0010] To achieve the above technical purposes, the application provides a novel high-integration packaging IPM module, which comprises a power semiconductor device and a PCB driving board, and further comprises a copper bottom plate and a ceramic substrate arranged in a layered and transversely extending manner; the ceramic substrate is arranged above the copper bottom plate serving as a heat dissipation carrier and structural base of the IPM module, and the power semiconductor device is arranged on the upper layer of the ceramic substrate; an internal PIN pin is arranged on the upper layer of the ceramic substrate and fixedly installed longitudinally, the upper end of the internal PIN pin is connected to the PCB driving board in interference fit, and the power semiconductor device and the PCB driving board are respectively located on the bottom layer and the middle layer of the IPM module and arranged transversely and connected in drive through the internal PIN pin, and the two are arranged in a first spaced manner in the longitudinal direction along the height of the internal PIN pin; an external PIN pin is arranged on the upper surface of the PCB driving board and fixedly installed longitudinally, the upper end of the external PIN pin penetrates through a plastic cover plate located on the upper surface of the IPM module and extends to the outside of the IPM module to form a control pin, and the plastic cover plate and the PCB driving board are respectively located on the top layer and the middle layer of the IPM module and arranged transversely and connected to the outside through the external PIN pin, and the two are arranged in a second spaced manner in the longitudinal direction along the height of the external PIN pin.

[0011] The application provides a novel high-integration packaging IPM module, which is an integrated IPM module integrating a power device and a PCB driving board, simplifies the connection structure of an IGBT chip and a driving circuit, improves the connection reliability, optimizes the heat dissipation path, reduces the highest temperature in the packaging body, shortens the driving signal transmission path, suppresses EMI interference, reduces the assembly process, improves the module production consistency and cost advantage.

[0012] As a further improvement, the lower end of the internal PIN pin is directly connected to the emitter and gate of an IGBT chip in the power semiconductor device; the lower end of the external PIN pin is connected to the upper surface of the PCB driving board 6 by welding, and the control pin formed at the upper end receives an external control signal and outputs a protection state signal.

[0013] As a further improvement, the ceramic substrate is fixedly connected to the copper bottom plate through high-thermal-conductivity tin paste, and the bottom of the copper bottom plate is a flat-bottom heat dissipation structure for indirectly dissipating heat for the IPM module or a needle-type heat dissipation structure for directly dissipating heat for the IPM module.

[0014] As a further improvement, the ceramic substrate adopts aluminum nitride or silicon carbide and is double-clad with a copper layer, and serves as a heat dissipation carrier and structural substrate of the packaged IPM module, and a chip in the power semiconductor device, the internal PIN pin, and the frame pin connection base.

[0015] As a further improvement, the chip adopts SiI GBT, SiC MOSFET or GaN HEMT, voltage level 650V-1700V, and the bonding area of the chip is provided with a metallization layer, which adopts Al, AlSi, AlSiCu, Ni-Au or Ni-Pd-Au, and has a thickness of 1-5μm, so as to improve the bonding strength with the bonding material.

[0016] As a further improvement, the chip is connected to the ceramic substrate by silver sintering or high-thermal-conductivity tin paste, the internal PIN pin and the frame pin are connected to the ceramic substrate by tin paste welding to serve as control signal and power signal input and output terminals, and the chips are connected by high-conductivity metal bonding for current conduction.

[0017] As a further improvement, the PCB drive board is integrated with a drive circuit, which includes: a drive chip, which adopts an isolated IGBT drive IC, for outputting an IGBT gate drive signal; an isolation element, which adopts a magnetic isolation or optical coupling isolator, for realizing electrical isolation of control signals and power signals; a protection circuit, which includes a current sampling resistor for overcurrent protection, a TVS diode for overvoltage protection, and a temperature sensor for overheat protection, the temperature sensor being used for monitoring the temperature of the IGBT chip; and an EMI suppression unit, which includes a high-frequency filtering capacitor close to the power supply end of the drive chip, and a complete ground plane in the PCB drive board for grounding, for suppressing electromagnetic radiation of the drive signal.

[0018] As a further improvement, it further includes an epoxy resin plastic encapsulation body, which integrates and packages the copper bottom plate, the ceramic substrate, the IGBT chip, and the PCB drive board in the same package, and only exposes: the frame pins led out from the metal conductive layer of the ceramic substrate, for power input and output of the IGBT chip, the frame pins being upwardly and obliquely extended inside the epoxy resin plastic encapsulation body and laterally and outwardly extended outside the epoxy resin plastic encapsulation body; and the external PIN pins led out from the drive circuit of the PCB drive board.

[0019] As a further improvement, it further comprises an auxiliary heat dissipation structure: a heat dissipation window is opened on the upper part of the PCB drive plate corresponding to the position of the drive chip and the protection circuit, the heat dissipation window is filled with heat-conducting silica gel, so that the drive chip and the protection circuit are indirectly contacted with the heat dissipation structure outside the epoxy resin plastic package body through the heat-conducting silica gel, and local heat dissipation is strengthened.

[0020] As a further improvement, the number of IGBT chips is flexibly adjusted according to the power requirement to adapt to single-phase and three-phase power conversion scenes.

[0021] Correspondingly, the application also provides a manufacturing method of the novel high-integration packaged IPM module, wherein: the copper bottom plate, the ceramic substrate, the power semiconductor device, the PCB drive plate and the plastic cover plate located on the upper surface of the IPM module are arranged in a self-bottom-to-top stratification and lateral extension manner; the ceramic substrate with a double-sided copper-clad layer is arranged above the copper bottom plate which is the heat dissipation carrier and structural base of the IPM module, the power semiconductor device is arranged on the upper layer of the ceramic substrate, and the ceramic substrate serves as the heat dissipation carrier, structural base and connecting matrix of the power semiconductor device; the internal PIN pin is fixedly installed and arranged on the upper layer of the ceramic substrate, the upper end of the internal PIN pin is connected in interference fit with the PCB drive plate, the power semiconductor device and the PCB drive plate are respectively located on the bottom layer and the middle layer of the IPM module and are arranged laterally and connected through the internal PIN pin driving connection, and the two form a first interval arrangement space in the longitudinal direction along the height of the internal PIN pin; the external PIN pin is fixedly installed and arranged on the upper surface of the PCB drive plate, the upper end of the external PIN pin penetrates through the plastic cover plate located on the upper surface of the IPM module and extends to the outside of the IPM module to form a control pin, and the plastic cover plate and the PCB drive plate are respectively located on the top layer and the middle layer of the IPM module and are arranged laterally and connected with the outside through the external PIN pin, and the two form a second interval arrangement space in the longitudinal direction along the height of the external PIN pin.

[0022] The application provides an integrated intelligent power module in which the power semiconductor device and the PCB drive plate are integrated in the same package, and the integrated IPM module has higher integration, more reliable connection and better heat dissipation, and is suitable for medium and high voltage power conversion scenes such as frequency converters, new energy automobile electric control systems and industrial inverters. BRIEF DESCRIPTION OF DRAWINGS

[0023] Figure 1 It is a schematic diagram of the principle of the application.

[0024] Figures: copper bottom plate 1, ceramic substrate 2, chip 3, internal PIN pin 4, frame pin 5, PCB drive plate 6, plastic cover plate 7, epoxy resin plastic package 8, external PIN pin 9. DETAILED DESCRIPTION

[0025] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0026] In the description of the present application, it should be understood that the orientation or positional relationship indicated by terms such as "up", "down", "left", "right", "inner", "outer", "horizontal", "vertical" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application, and does not indicate or imply that the device or element referred to must have a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0027] As shown in Figure 1 The present application provides a novel high-integration packaging IPM module, which comprises: a power semiconductor device and a PCB drive plate 6, which further comprises a copper bottom plate 1 and a ceramic substrate 2 arranged in layers and extending laterally; the ceramic substrate 2 with a double-sided copper clad layer is arranged above the copper bottom plate 1 as a heat dissipation carrier and structural base of the IPM module, the power semiconductor device is arranged on the upper layer of the ceramic substrate 2, and the ceramic substrate 2 serves as a heat dissipation carrier, structural base and connecting matrix of the power semiconductor device; an internal PIN pin 4 is arranged in longitudinal fixed installation on the upper layer of the ceramic substrate 2, the upper end of the internal PIN pin 4 is connected in interference fit with the PCB drive plate 6, and the power semiconductor device and the PCB drive plate 6 are respectively located in the bottom layer and the middle layer of the IPM module and arranged laterally and connected in drive through the internal PIN pin 4, and the two form a first spaced arrangement space in the longitudinal direction along the height of the internal PIN pin 4; an external PIN pin 9 is arranged in longitudinal fixed installation on the upper surface of the PCB drive plate 6, the upper end of the external PIN pin 9 passes through a plastic cover plate 7 located on the upper surface of the IPM module and extends to the outside of the IPM module to form a control pin, and the plastic cover plate 7 and the PCB drive plate 6 are respectively located in the top layer and the middle layer of the IPM module and arranged laterally and connected with the outside through the external PIN pin 9, and the two form a second spaced arrangement space in the longitudinal direction along the height of the external PIN pin 9.

[0028] The application provides a novel high-integration packaging IPM module, which integrates a power device and a PCB driving board into an integrated IPM module, simplifies the connection structure of IGBT chips and a driving circuit, improves connection reliability, optimizes a heat dissipation path, reduces the highest temperature in a packaging body, shortens a driving signal transmission path, suppresses EMI interference, reduces assembly procedures, and improves module production consistency and cost advantage.

[0029] As a further improvement, the lower end of the internal PIN pin 4 is directly connected with the emitter and gate of the IGBT chip in the power semiconductor device, the connection area is increased and the connection reliability is improved, and the use of wire bonding or second reflow connection through a metal pin is avoided; the lower end of the external PIN pin 9 is connected with the upper surface of the PCB driving board 6 by welding, and the control pin formed at the upper end receives an external control signal and outputs a protection state signal.

[0030] As a further improvement, the ceramic substrate 2 is fixedly connected with the copper bottom plate 1 through high-thermal-conductivity tin paste, and the bottom of the copper bottom plate 1 is a flat-bottom heat dissipation structure for indirectly dissipating heat for the IPM module or a needle-type heat dissipation structure for directly dissipating heat for the IPM module.

[0031] As a further improvement, the ceramic substrate 2 is made of aluminum nitride AlN or silicon carbide SiC and is double-coated with a copper layer, and serves as a heat dissipation carrier and a structural base of the packaging IPM module, and a connection base of the chip 3 in the power semiconductor device, the internal PIN pin 4 and the frame pin 5.

[0032] As a further improvement, the chip 3 is made of Si IGBT, SiC MOSFET or GaN HEMT, and has a voltage level of 650V-1700V, and a metallization layer is arranged on the bonding area of the chip, the metallization layer is made of Al, AlSi, AlSiCu, Ni-Au or Ni-Pd-Au, and has a thickness of 1-5μm, so as to improve the bonding strength with the bonding material.

[0033] As a further improvement, the chip 3 is connected with the ceramic substrate 2 through silver sintering or high-thermal-conductivity tin paste, the internal PIN pin 4 and the frame pin 5 are connected with the ceramic substrate 2 through tin paste welding, so as to serve as a control signal and power signal input and output end, and the chips 3 and the ceramic substrate are connected through high-conductivity metal bonding, so as to be used for current conduction.

[0034] As a further improvement, the PCB driver board 6 integrates a driver circuit, which includes: a driver chip, which is an isolated IGBT driver IC, used to output IGBT gate drive signals; isolation components, which are magnetic isolation or optocoupler isolators, to achieve electrical isolation between control signals and power signals; protection circuit, which includes a current sampling resistor for overcurrent protection, a TVS diode for overvoltage protection, and a temperature sensor for overheat protection, the temperature sensor being used to monitor the IGBT chip temperature; and an EMI suppression unit, which includes a high-frequency filter capacitor near the power supply terminal of the driver chip, and a ground plane with a complete ground layer set in the PCB driver board 6, used to suppress electromagnetic radiation of the drive signal.

[0035] As a further improvement, it also includes an epoxy resin encapsulation 8, which integrates the copper base plate, the ceramic substrate, the IGBT chip, and the PCB driver board into the same package, and exposes only: the frame pins leading out from the metal conductive layer of the ceramic substrate for the power input and output of the IGBT chip, the frame pins extending upwardly inside the epoxy resin encapsulation and laterally outward outside the epoxy resin encapsulation; and the external PIN pins leading out from the drive circuit of the PCB driver board.

[0036] As a further improvement, it also includes an auxiliary heat dissipation structure: a heat dissipation window is opened on the upper part of the PCB driver board at the position corresponding to the driver chip and the protection circuit. The heat dissipation window is filled with thermally conductive silicone, so that the driver chip and the protection circuit can indirectly contact the heat dissipation structure outside the epoxy resin encapsulation through the thermally conductive silicone, thereby enhancing local heat dissipation.

[0037] As a further improvement, the number of IGBT chips can be flexibly adjusted according to power requirements to adapt to single-phase and three-phase power conversion scenarios.

[0038] Accordingly, the present invention also provides a method for manufacturing a novel highly integrated packaged IPM module, wherein: a copper base plate 1, a ceramic substrate 2, a power semiconductor device, a PCB driver board 6, and a plastic cover plate 7 located on the upper surface of the IPM module are arranged in layers from bottom to top and extending laterally; the ceramic substrate 2, which serves as the heat dissipation carrier and structural base of the IPM module, is arranged above the copper base plate 1, which has a double-sided copper coating; the power semiconductor device is arranged on the upper layer of the ceramic substrate 2; the ceramic substrate 2 serves as the heat dissipation carrier, structural base, and connection base of the power semiconductor device; an internal pin 4 is longitudinally fixedly mounted on the upper surface of the ceramic substrate 2; the upper end of the internal pin 4 is interference-fitted with the PCB driver board 6; the power semiconductor device... The semiconductor device and the PCB driver board 6 are located on the bottom and middle layers of the IPM module, respectively, and are arranged laterally and connected to the outside via the internal PIN pin 4. The two form a first spaced arrangement along the height of the internal PIN pin 4 in the vertical direction. An external PIN pin 9 is fixedly installed on the upper layer of the PCB driver board 6 in the vertical direction. The upper end of the external PIN pin 9 passes through the plastic cover plate 7 located on the upper surface of the IPM module and extends to the outside of the IPM module to form a control pin. The plastic cover plate 7 and the PCB driver board 6 are located on the top and middle layers of the IPM module, respectively, and are arranged laterally and connected to the outside via the external PIN pin 9. The two form a second spaced arrangement along the height of the external PIN pin 9 in the vertical direction.

[0039] This invention provides an integrated intelligent power module (IPM) that integrates power semiconductor devices and PCB driver boards into the same package. It is an integrated IPM module with higher integration, more reliable connection and better heat dissipation, and is suitable for medium and high voltage power conversion scenarios such as frequency converters, new energy vehicle electronic control systems and industrial inverters.

[0040] In such Figure 1 In the preferred embodiment shown, the present invention provides an integrated IPM module that integrates power devices and a PCB driver board, and adopts the following technical solution: Copper base plate 1: Serves as the heat dissipation carrier and structural base of the module. It has high thermal conductivity and mechanical strength. The bottom is a flat or pin-type heat dissipation structure, which is used for heat dissipation of the module indirectly or directly.

[0041] Double-sided copper-clad ceramic substrate 2: As a heat dissipation carrier and structural substrate for the chip, it adopts an aluminum nitride (AlN) or silicon carbide (SiC) ceramic substrate with copper layers on both sides to achieve synergistic optimization of high thermal conductivity, high insulation and high reliability; the ceramic substrate serves as the connection base for the chip, internal PIN pins and frame pins.

[0042] Chip 3: Uses Si IGBT, SiC MOSFET or GaN HEMT chips, with voltage ratings of 650V-1700V to adapt to different power scenarios; the chip bonding area is equipped with a metallization layer (Al, AlSi, AlSiCu, Ni-Au or Ni-Pd-Au, etc.) with a thickness of 1-5μm to improve the bonding strength with the bonding material, and is connected to the ceramic substrate by silver sintering or high thermal conductivity solder paste.

[0043] Power device: Chip 3 is soldered together with ceramic substrate 2. The chips are connected to each other and to the ceramic substrate through conductive metal for current conduction. Internal PIN pins 4 (using pressfit pins) are soldered on the ceramic substrate 2. The above combination forms a power device. The internal PIN pins 4 are connected to the PCB driver board 6 through interference fit to realize the connection between the power device and the PCB driver board 6.

[0044] PCB driver board 6: Connected to the power device via an interference fit using internal pins 4, and electrically connected to the emitter and gate of the IGBT chip via internal pins 4; the PCB driver board has external pins (pressfit pins or solder pins) for connecting external signals; the PCB driver board integrates a driver circuit, which includes: 1) Driver chip: An isolated IGB driver IC is used to output IGBT gate drive signals.

[0045] 2) Isolation components: Magnetic isolation or optocoupler isolators are used to achieve electrical isolation between control signals and power signals.

[0046] 3) Protection circuit: including current sampling resistor (for overcurrent protection), TVS diode (for overvoltage protection), and temperature sensor (such as NTC thermistor for overheat protection), the temperature sensor is used to monitor the temperature of IGBT chip.

[0047] 4) EMI suppression unit: including high-frequency filter capacitor (close to the power supply terminal of the driver chip) and ground plane (a complete ground plane is set in the PCB driver board) to suppress electromagnetic radiation of the drive signal.

[0048] Packaging structure: An epoxy resin encapsulator is used to encapsulate the copper base plate, ceramic substrate, IGBT chip, and PCB driver board into a single unit, exposing only: Power pins: Frame pins extending from the metal conductive layer of the ceramic substrate, used for power input / output of the IGBT chip.

[0049] Control pins: PINs led out from the drive circuit of the PCB driver board, used to receive external control signals (such as PWM signals) and output protection status signals.

[0050] Auxiliary heat dissipation structure: Heat dissipation windows are opened on the PCB driver board at the positions corresponding to the driver chip and protection circuit. The heat dissipation windows are filled with thermally conductive silicone, so that the driver chip and protection circuit can indirectly contact the heat dissipation structure (such as heat sink fins) outside the plastic package through the thermally conductive silicone, thereby enhancing local heat dissipation.

[0051] like Figure 1 As shown, the highly integrated packaged IPM module of the present invention includes a power semiconductor device and a PCB driver board fixed to the top of the power device via pins. The outer surfaces of the power device and the PCB driver board are covered with a plastic encapsulating filler for encapsulation, preferably an epoxy resin encapsulator 8. The power device includes a copper base plate 1, a double-sided copper-clad ceramic substrate 2, a chip 3, internal pins 4, and frame pins 5. The copper base plate 1 serves as a module carrier to support various devices and improve heat dissipation of the package module. The double-sided copper-clad ceramic substrate 2 is connected to the copper base plate 1 via high thermal conductivity solder paste. The upper copper layer surface serves as the carrier for the chip 3, internal pins 4, and frame pins 5, and is connected to the ceramic substrate 2 via silver sintering or high thermal conductivity solder paste. Chips are connected to each other and to the ceramic substrate via high conductivity metal bonding. The internal pins and frame pins are soldered to the surface of the ceramic substrate via solder paste to serve as input / output for control and power signals. The PCB driver board 6 is connected to the power device via an interference fit of internal pins (pressfit-pins). The internal pins are electrically connected to the emitter and gate of the IGBT chip, avoiding the use of wire bonding or secondary reflow connection via metal pins. This increases the connection area by 3-5 times, effectively improving connection reliability. The PCB board has external pins 9 (pressfit-pins). The external pin (orsolder-pin) is used to connect to external signals; the PCB driver board integrates a driver circuit, which includes components such as a driver chip, isolation components, protection circuit, and external pins; the external pin 9 on the PCB driver board passes through the plastic cover plate 7 and connects to the outside; heat dissipation windows are opened on the PCB driver board at positions corresponding to the driver chip and protection circuit, and the heat dissipation windows are filled with thermally conductive silicone, so that the driver chip and protection circuit can indirectly contact the heat dissipation structure (such as heat sink fins) outside the plastic package through the thermally conductive silicone, thereby enhancing local heat dissipation.

[0052] The IPM packaging structure described in this invention eliminates the traditional reliance on wire bonding or metal wire connections between the IGBT chip and the driver PCB board. This effectively solves the problem that traditional wire bonding is prone to bond point detachment and wire fatigue breakage due to vibration and temperature cycling during long-term operation, leading to module failure. Simultaneously, it effectively shortens the transmission path of the drive signal from the PCB driver board to the IGBT chip, making it less susceptible to external electromagnetic interference and preventing high-frequency noise generated during IGBT switching from interfering with the drive circuit and affecting control accuracy. By combining the power semiconductor device with the PCB driver board and heat dissipation components, assembly steps are reduced, module production consistency is improved, and cost advantages are achieved, especially in high-power semiconductor device applications.

[0053] The beneficial effects of this invention are as follows: 1. Significantly improved connection reliability: The PCB driver board and IGBT chip are directly connected via PIN pins, replacing the traditional wire bonding. The connection area is increased by 3-5 times, and the resistance to vibration and temperature cycling is improved by more than 40%, reducing the probability of module failure.

[0054] 2. Optimized heat dissipation efficiency: The heat of the IGBT chip is directly conducted to the heat dissipation substrate through the chip substrate, and the heat of the drive circuit is discharged through the heat dissipation window and thermal conductive silicone, which effectively reduces the maximum temperature inside the package and extends the module life.

[0055] 3. EMI interference suppression: The drive signal transmission path is shortened, and combined with the EMI suppression unit, the electromagnetic radiation intensity is reduced to meet the EN 55022 Class B electromagnetic compatibility standard.

[0056] 4. Improved integration and productivity: Integrating IGBT chips, drive circuits, and protection circuits into the same package reduces assembly steps by more than 40%, significantly lowering production costs.

[0057] 5. Wide applicability: The number of IGBT chips can be flexibly adjusted according to power requirements (e.g., 1-6), adapting to single-phase and three-phase power conversion scenarios, and compatible with different applications such as new energy vehicles and industrial frequency conversion.

[0058] It should be understood that the scope of protection sought by this invention is not limited to the non-limiting embodiments, which are merely illustrative examples. The substantive scope of protection claimed in this application is further embodied in the scope provided by the independent claims and their dependent claims.

Claims

1. A novel highly integrated packaged IPM module, comprising: The power semiconductor device and PCB driver board (6) are characterized in that: it further includes a layered and laterally extended copper base plate (1) and a ceramic substrate (2). The ceramic substrate (2) is arranged above the copper base plate (1), which serves as the heat dissipation carrier and structural base of the IPM module, and the power semiconductor device is arranged on the upper layer of the ceramic substrate (2). An internal pin (4) is fixedly mounted on the upper layer of the ceramic substrate (2) in the longitudinal direction. The upper end of the internal pin (4) is interference-fitted with the PCB driver board (6). The power semiconductor device and the PCB driver board (6) are located at the bottom and middle layers of the IPM module respectively and are arranged laterally and are connected by the internal pin (4). The two form a first spaced arrangement along the height of the internal pin (4) in the longitudinal direction. An external pin (9) is fixedly mounted longitudinally on the upper surface of the PCB driver board (6). The upper end of the external pin (9) passes through the plastic cover plate (7) located on the upper surface of the IPM module and extends to the outside of the IPM module to form a control pin. The plastic cover plate (7) and the PCB driver board (6) are located on the top and middle layers of the IPM module respectively and are arranged laterally and connected to the outside through the external pin (9). The two form a second spaced arrangement along the height of the external pin (9) in the longitudinal direction.

2. The novel highly integrated packaged IPM module according to claim 1, characterized in that: The lower end of the internal PIN (4) is directly electrically connected to the emitter and gate of the IGBT chip in the power semiconductor device; the lower end of the external PIN (9) is connected to the upper surface of the PCB driver board (6) by soldering, and the control pin formed at its upper end receives external control signals and outputs protection status signals.

3. A novel highly integrated packaged IPM module according to claim 2, characterized in that: The ceramic substrate (2) is fixedly connected to the copper base plate (1) by a high thermal conductivity solder paste. The bottom of the copper base plate (1) is either a flat-bottom heat dissipation structure for indirect heat dissipation of the IPM module, or a pin-type heat dissipation structure for direct heat dissipation of the IPM module.

4. A novel highly integrated packaged IPM module according to claim 3, characterized in that: The ceramic substrate (2) is made of aluminum nitride or silicon carbide and has a double-sided copper coating. It serves as the heat dissipation carrier and structural base of the packaged IPM module, as well as the base for connecting the chip (3), the internal PIN pin (4), and the frame pin (5) in the power semiconductor device.

5. A novel highly integrated packaged IPM module according to claim 4, characterized in that: The chip (3) uses Si IGBT, SiC MOSFET or GaN HEMT with a voltage rating of 650V-1700V. The bonding area of ​​the chip is provided with a metallization layer, which uses Al, AlSi, AlSiCu, Ni-Au or Ni-Pd-Au with a thickness of 1-5μm to improve the bonding strength with the bonding material.

6. A novel highly integrated packaged IPM module according to claim 5, characterized in that: The chip (3) is connected to the ceramic substrate (2) by silver sintering or high thermal conductivity solder paste. The internal PIN pin (4) and the frame pin (5) are connected to the ceramic substrate (2) by solder paste to serve as input and output terminals for control signals and power signals. The chips (3) are connected to each other and to the ceramic substrate by high conductivity metal bonding for current conduction.

7. A novel highly integrated packaged IPM module according to claim 6, characterized in that: The PCB driver board (6) integrates a driver circuit, which includes: The driver chip, which is an isolated IGBT driver IC, is used to output the IGBT gate drive signal; Isolation components, which employ magnetic isolation or optocoupler isolators, achieve electrical isolation between control signals and power signals; Protection circuit: It includes a current sampling resistor for overcurrent protection, a TVS diode for overvoltage protection, and a temperature sensor for overheat protection, wherein the temperature sensor is used to monitor the temperature of the IGBT chip; The EMI suppression unit includes: a high-frequency filter capacitor near the power supply terminal of the driver chip, and a ground plane with a complete ground layer in the PCB driver board (6) for suppressing electromagnetic radiation of the drive signal.

8. A novel highly integrated packaged IPM module according to claim 7, characterized in that: It also includes an epoxy resin encapsulation (8), which integrates the copper base plate, the ceramic substrate, the IGBT chip, and the PCB driver board into the same package, and exposes only: the frame pins leading out from the metal conductive layer of the ceramic substrate for the power input and output of the IGBT chip, the frame pins (5) extending upwards inside the epoxy resin encapsulation (8) and laterally extending outwards outside the epoxy resin encapsulation; and the external PIN pins leading out from the drive circuit of the PCB driver board.

9. A novel highly integrated packaged IPM module according to claim 8, characterized in that: It also includes an auxiliary heat dissipation structure: a heat dissipation window is opened on the upper part of the PCB driver board at the position corresponding to the driver chip and the protection circuit. The heat dissipation window is filled with thermally conductive silicone, so that the driver chip and the protection circuit can indirectly contact the heat dissipation structure outside the epoxy resin encapsulation through the thermally conductive silicone, thereby enhancing local heat dissipation.

10. A novel highly integrated packaged IPM module according to claim 9, characterized in that: The number of IGBT chips can be flexibly adjusted according to power requirements to adapt to single-phase and three-phase power conversion scenarios.

11. A method for manufacturing a novel highly integrated packaged IPM module, characterized in that: The copper base plate (1), ceramic substrate (2), power semiconductor device, PCB driver board (6) and plastic cover plate (7) located on the upper surface of the IPM module are arranged in layers from bottom to top and extend laterally. The ceramic substrate (2) is arranged above the copper base plate (1), which serves as the heat dissipation carrier and structural base of the IPM module, and the power semiconductor device is arranged on the upper layer of the ceramic substrate (2). An internal pin (4) is fixedly mounted on the upper layer of the ceramic substrate (2) in the longitudinal direction. The upper end of the internal pin (4) is interference-fitted with the PCB driver board (6). The power semiconductor device and the PCB driver board (6) are located at the bottom and middle layers of the IPM module respectively and are arranged laterally and are connected by the internal pin (4). The two form a first spaced arrangement along the height of the internal pin (4) in the longitudinal direction. An external pin (9) is fixedly mounted longitudinally on the upper surface of the PCB driver board (6). The upper end of the external pin (9) passes through the plastic cover plate (7) located on the upper surface of the IPM module and extends to the outside of the IPM module to form a control pin. The plastic cover plate (7) and the PCB driver board (6) are located on the top and middle layers of the IPM module respectively and are arranged laterally and connected to the outside through the external pin (9). The two form a second spaced arrangement along the height of the external pin (9) in the longitudinal direction.

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