Substrate structure, preparation method thereof and chip packaging structure

Abstract

The embodiment of the invention provides a substrate structure and a preparation method thereof, and a chip packaging structure, and the preparation method of the substrate structure comprises the steps: setting a cut-off layer at one side of a temporary support plate; a carrier plate product is arranged on the side, away from the substrate, of the cut-off layer, and the carrier plate product is provided with a preset area; and patterning the preset area of the carrier plate product to form a carrier plate with a connecting through hole, wherein the connecting through hole penetrates through the carrier plate. According to the embodiment of the invention, the problems that the ultra-thin glass is difficult to directly process and is difficult to be ultrathin through thinning treatment can be solved, so that the ultra-thin glass can be used as the carrier plate glass.

Description

Technical Field

[0001] This application relates to the field of integrated circuit equipment technology, and in particular to a substrate structure, a mobile terminal, and a method for fabricating the substrate structure. Background Technology

[0002] The substrate structure of an integrated circuit (IC), also known as the IC packaging substrate, is directly used to mount the IC. It not only provides support and protection for the IC but also enables the connection between the IC and the printed circuit board (PCB). In short, the substrate structure is the core element that supports the IC and enables high-speed communication and effective heat dissipation between the IC and the outside world.

[0003] Existing substrate structure fabrication processes need to be improved. Summary of the Invention

[0004] This application provides a substrate structure and its preparation method, as well as a chip packaging structure, aiming to improve the substrate structure preparation process.

[0005] An embodiment of the first aspect of this application provides a method for fabricating a substrate structure, including: A stop layer is installed on one side of the temporary carrier plate; A carrier plate product is disposed on the side of the cut-off layer opposite to the substrate, and the carrier plate product has a predetermined area; The preset area of ​​the carrier plate product is patterned to form a carrier plate with connecting through holes, the connecting through holes being disposed through the carrier plate.

[0006] According to an embodiment of the first aspect of this application, in the step of patterning the predetermined area of ​​the carrier plate article to form a carrier plate with connecting through holes: The preset region is modified to form a modified region; The carrier plate material in the modified region is removed to form the connecting through hole.

[0007] According to any of the foregoing embodiments of the first aspect of this application, in the step of forming the connecting through hole by removing the modified region of the carrier plate article material... The modified area of ​​the carrier plate is wet-etched using an etching solution to form the connecting via.

[0008] According to any of the foregoing embodiments of the first aspect of this application, the material of the stop layer includes a material resistant to corrosion by the etching solution.

[0009] According to any of the foregoing embodiments of the first aspect of this application, the material of the stop layer includes an adhesive that is resistant to corrosion by the etching solution.

[0010] According to any one of the preceding embodiments of the first aspect of the present application, the material of the cutoff layer comprises at least one of silicone resin, polystyrene, polybutadiene, polyisocyanate epoxy resin.

[0011] According to any one of the preceding embodiments of the first aspect of the present application, in the step of modifying the preset region to form a modified region: the modification of the preset region is performed using a laser, and the end of the laser is located within the cutoff layer.

[0012] According to any one of the preceding embodiments of the first aspect of the present application, in the step of patterning the preset region of the carrier product to form a carrier with connection vias: the connection vias are formed by dry etching the preset region using a laser.

[0013] According to any one of the preceding embodiments of the first aspect of the present application, in the step of dry etching the preset region using a laser to form the connection vias, the end of the laser is located within the cutoff layer.

[0014] According to any one of the preceding embodiments of the first aspect of the present application, the thickness of the cutoff layer is 3 μm to 100 μm.

[0015] According to any one of the preceding embodiments of the first aspect of the present application, the thickness of the carrier product is 30 μm to 1500 μm. and / or, the material of the carrier product is the same as the material of the temporary carrier.

[0016] According to any one of the preceding embodiments of the first aspect of the present application, after the step of patterning the preset region of the carrier product to form a carrier with connection vias, the method further comprises: preparing a conductive part in the connection vias; preparing a first wire layer on the side of the carrier facing away from the temporary carrier, the first wire layer comprising first signal lines, at least one of the first signal lines being electrically connected to the conductive part; removing the temporary carrier and the cutoff layer; preparing a second wire layer on the side of the conductive part facing away from the first wire layer, the second wire layer comprising second signal lines, at least one of the second signal lines being electrically connected to the conductive part, so that the second signal lines can be electrically connected to the first signal lines through the conductive part.

[0017] According to any one of the foregoing embodiments of the first aspect of the present application, the seed conductive material layer covers the surface of the carrier plate away from the temporary carrier, the sidewall surface of the carrier plate facing the connecting through hole, and the surface of the stop layer exposed by the connecting through hole; A plating conductive material layer is arranged on the side of the seed conductive material layer away from the substrate, the plating conductive material layer and the seed conductive material layer combine to form a conductive material layer, and the plating conductive material layer covers the surface of the carrier plate away from the temporary carrier and fills the connecting through hole; The conductive material layer is subjected to a patterning process to form the conductive part located in the connecting through hole.

[0018] According to any one of the foregoing embodiments of the first aspect of the present application, in the step of subjecting the conductive material layer to a patterning process to form the conductive part located in the connecting through hole: The conductive material layer located on the side of the carrier plate away from the temporary carrier is removed by grinding or wet etching to form the conductive part located in the connecting through hole.

[0019] The embodiments of the first aspect of the present application also provide a substrate structure preparation method, comprising: A stop layer is arranged on one side of a temporary carrier; A carrier plate product is arranged on the side of the stop layer away from the substrate, and the carrier plate product has a preset region; The preset region of the carrier plate product is subjected to a patterning process by using a laser to form a carrier plate having a connecting through hole, and the connecting through hole is arranged through the carrier plate.

[0020] The embodiments of the second aspect of the present application also provide a substrate structure, which is prepared by the preparation method of any one of the first aspect embodiments.

[0021] The embodiments of the third aspect of the present application also provide a chip packaging structure, which comprises the substrate structure provided by any one of the second aspect embodiments.

[0022] In the substrate structure provided by the embodiment of the present application, the stop layer is first arranged on the temporary carrier, then the carrier product is arranged on the side of the stop layer away from the temporary carrier, and finally the carrier product is subjected to the patterning treatment to form the carrier with the connecting through holes which can be used to arrange the conductive part to realize the interconnection of the signal lines on the two surfaces of the carrier. When the carrier product is subjected to the patterning treatment to form the connecting through holes penetrating through the carrier, for example, when the etching process is used to pattern the carrier product, due to the presence of the stop layer, on the one hand, the etching depth can be increased to ensure that the connecting through holes can completely penetrate through the carrier; and due to the presence of the stop layer, even if the carrier product is over-etched, only the stop layer is affected, the temporary carrier is not affected, the supporting performance of the temporary carrier is not affected, and the subsequent process preparation of the substrate structure is not affected. Therefore, by arranging the stop layer on the temporary carrier before the patterning treatment of the carrier product, the preparation precision of the connecting through holes can be ensured, and the process performance of the substrate structure can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0023] Other features, objects, and advantages of the present application will become more apparent from the following detailed description of non-limiting embodiments thereof as taken in conjunction with the accompanying drawings, in which like references denote like features.

[0024] Figure 1 is a preparation method flowchart of a substrate structure provided by an embodiment of the present application; Figures 2 to 4 is a structure schematic diagram of a substrate structure in a preparation process provided by an embodiment of the present application; Figure 5 is Figure 1 a method flowchart of a certain step in the preparation method; Figure 6 and Figure 7 is a structure schematic diagram of a substrate structure in a preparation process provided by another embodiment of the present application; Figure 8 is a preparation method flowchart of a substrate structure provided by another embodiment of the present application; Figures 9 to 12 is a structure schematic diagram of a substrate structure in a preparation process provided by another embodiment of the present application; Figure 13 is Figure 8 a method flowchart of a certain step in the preparation method; Figures 14 to 16 is Figure 13 a structure schematic diagram of a preparation method of a substrate structure in a preparation process; Figure 17 is a preparation method flowchart of a substrate structure provided by another embodiment of the present application.

[0025] Reference Signs List: 20, seed conductive material layer; 30, electroplated conductive material layer; 100, temporary carrier plate; 200, stop layer; 300, carrier plate; 301, carrier plate product; 302, preset area; 303, modified area; 310, connecting through hole; 410, conductive part; 411, seed conductive layer; 412, electroplated conductive layer; 420, first conductive line layer; 421, first signal line; 430, second conductive line layer; 431, second signal line; 440, first signal line layer; 450, second signal line layer; 511, first insulating spacing layer; 512, second insulating spacing layer; 521, first protective layer; 521a, first opening; 522, second protective layer; 522a, second opening; 530, soldering part; Z, thickness direction. DETAILED DESCRIPTION

[0026] Features and exemplary embodiments of various aspects of the present application will be described in detail below. In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, it will be apparent to one of ordinary skill in the art that the present application can be practiced without some or all of these specific details. The description of the embodiments is merely illustrative of the present application and is not intended to limit the present application, as is apparent to one of ordinary skill in the art. In the drawings and description below, well-known structures and techniques have not been shown or described in detail in order not to obscure the application; and, for the purpose of clarity, not every component is called out in every drawing. Furthermore, features described below can be combined in any suitable manner in one or more embodiments.

[0027] In the description of the present application, it should be noted that, unless otherwise specified, the meaning of "a plurality of" is more than two; the orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", "inner", "outer" and the like is merely for the purpose of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", and the like are only for descriptive purposes and cannot be understood as indicating or implying relative importance.

[0028] The orientation words appearing in the following description are the directions shown in the drawings, and are not intended to limit the specific structure of the embodiments of the present application. It should be noted in the description of the present application that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting" should be understood broadly, for example, it can be fixedly connected, or detachably connected, or integrally connected; it can be directly connected, or indirectly connected. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0029] In order to better understand the present application, the following will be described in combination with Figures 1 to 16 The substrate structure and the preparation method thereof, and the chip packaging structure of the embodiments of the present application will be described in detail.

[0030] Please refer to Figure 1 , Figure 1 The preparation method flow chart of a substrate structure provided by the embodiments of the present application.

[0031] As Figure 1 shown, the embodiments of the first aspect of the present application provide a preparation method of a substrate structure, comprising: Step S01: as Figure 2 shown, a cutoff layer 200 is arranged on one side of a temporary carrier 100.

[0032] Step S02: as Figure 3 shown, a carrier product 301 is arranged on the side of the cutoff layer 200 away from the substrate, and the carrier product 301 has a preset area 302.

[0033] Step S03: as Figure 4 shown, the preset area 302 of the carrier product 301 is subjected to a patterning treatment to form a carrier 300 with a connecting through hole 310, and the connecting through hole 310 is arranged through the carrier 300. For example, the connecting through hole 310 is arranged through the carrier 300 along the thickness direction Z of the carrier 300.

[0034] In the substrate structure provided in the embodiments of the present application, firstly, the stop layer 200 is arranged on the temporary carrier 100, then the carrier product 301 is arranged on the side of the stop layer 200 away from the temporary carrier 100, and finally the carrier product 301 is subjected to the patterning treatment to form the carrier 300 with the connecting through holes 310, which can be used to arrange the conductive part 410 to realize the interconnection of the signal lines on the two surfaces of the carrier 300. When the carrier product 301 is subjected to the patterning treatment to form the connecting through holes 310 penetrating through the carrier 300, for example, when the carrier product 301 is subjected to the patterning treatment by using the etching process, due to the presence of the stop layer 200, on the one hand, the etching depth can be increased to ensure that the connecting through holes 310 can completely penetrate through the carrier 300; and due to the presence of the stop layer 200, even if the carrier product 301 is over-etched, only the stop layer 200 is affected, and the temporary carrier 100 is not affected, so the supporting performance of the temporary carrier 100 is not affected, and the subsequent process preparation of the substrate structure is not affected. Therefore, by arranging the stop layer 200 on the temporary carrier 100 before the patterning treatment of the carrier product 301, the preparation precision of the connecting through holes 310 can be ensured, and the process performance of the substrate structure can be improved. In this way, the problems that the ultra-thin glass is difficult to directly process and difficult to be thinned to be ultra-thin are solved, so that the ultra-thin glass can be used as the carrier glass.

[0035] The temporary carrier 100 can be arranged in various ways, for example, the material of the temporary carrier 100 is glass, so that the temporary carrier 100 has good supporting performance and low cost. In other embodiments, the material of the temporary carrier 100 can also include a rigid material such as metal. The material of the carrier product 301 can be arranged in various ways, for example, the material of the carrier product 301 includes glass, so that the carrier 300 prepared and formed by the carrier product 301 has good supporting performance and high light transmission performance.

[0036] Optionally, the thickness H1 of the temporary carrier 100 is greater than the thickness H2 of the carrier product 301, that is, the thickness H1 of the temporary carrier 100 is greater than the thickness H2 of the carrier 300. In these optional embodiments, the thickness H1 of the temporary carrier 100 is relatively large, and the thickness H2 of the carrier 300 is relatively small, so that the relatively thick temporary carrier 100 can provide better supporting ability, and the relatively thin carrier 300 can be prepared to form a substrate structure with a smaller thickness.

[0037] The patterning treatment of the preset region 302 of the carrier product 301 in step S03 can be performed in various ways, for example, the carrier product 301 can be subjected to the patterning treatment by using a dry etching process or a wet etching process. In some optional embodiments, as shown in Figure 5 step S03 includes: step S031: The preset region 302 is subjected to a modification treatment to form a modified region 303.

[0038] Step S032: removing the carrier product 301 material of the modified region 303 to form the connection through hole 310.

[0039] In these optional embodiments, first, the preset region 302 is modified by step S031 to form a modified region 303, and the temporary carrier 100 of the modified region 303 is easier to remove; then the carrier product 301 material of the modified region 303 is removed by step S032 to form the connection through hole 310 described above.

[0040] Optionally, in step S032, the carrier product 301 of the modified region 303 can be subjected to wet etching treatment using an etching liquid to form the connection through hole 310. This can improve etching efficiency and improve the preparation efficiency of the substrate structure.

[0041] The setting mode of the cutoff layer 200 is various. Optionally, the material of the cutoff layer 200 can include a material resistant to etching liquid corrosion. The material of the cutoff layer 200 can be selected according to the type of the etching liquid. For example, the material of the etching liquid can include hydrofluoric acid, and the material of the cutoff layer 200 can be a material resistant to hydrofluoric acid etching. Then, in step S032, when the carrier product 301 of the modified region 303 is subjected to wet etching treatment using an etching liquid, the etching liquid can be reduced. The corrosion of the cutoff layer 200 can provide protection to the temporary carrier 100, and improve the case of over-etching of the etching liquid to the temporary carrier 100.

[0042] In some optional embodiments, the material of the cutoff layer 200 can be a glue material resistant to etching liquid corrosion, so that the cutoff layer 200 not only can play a role in stopping etching liquid etching, but also can provide protection to the temporary carrier 100, and can play a role in bonding the carrier product 301 and the temporary carrier 100, and improve the connection strength between the carrier product 301 and the temporary carrier 100.

[0043] For example, the material of the cutoff layer 200 can include at least one of silicone resin, polystyrene, polybutadiene, polyisocyanate, and epoxy resin. This makes the cutoff layer 200 not only have good cutoff performance, but also provide protection to the temporary carrier 100, and have advantages such as stable performance and good bonding performance.

[0044] In step S031, the preset region 302 is modified in various ways, for example, the material of the carrier product 301 includes glass material. In step S31, the preset region 302 of the carrier product 301 is modified to change the etching rate and characteristics of the glass.

[0045] In some optional embodiments, the preset region 302 can be modified by ion exchange or ion doping. For example, in step S31, the preset region 302 can be modified by an electric field assisted ion exchange method, a silver nitrate or cesium nitrate liquid is arranged on the surface of the carrier product 301, and an electric field is applied, and then in step S032, the modified region 303 of the preset region 302 is patterned by using hydrofluoric acid to form the connection through hole 310. At this time, the material of the cutoff layer 200 can be a material resistant to hydrofluoric acid, so that when the modified region 303 of the preset region 302 is patterned by using the hydrofluoric acid liquid to form the connection through hole 310 in step S032, the etching liquid can be reduced. The corrosion of the cutoff layer 200 can provide protection for the temporary carrier 100 and improve the over-etching of the etching liquid to the temporary carrier 100.

[0046] Alternatively, in another optional embodiment, a laser modification method can be selected, and the laser can be a Bessel beam. For example, as shown in FIG. 8, Figure 6 in step S031, a laser is selected to modify the preset region 302 of the carrier product 301 to form a modified region 303, and then in step S032, the modified region 303 is patterned by using hydrofluoric acid to form the connection through hole 310. At this time, the material of the cutoff layer 200 can be a material resistant to hydrofluoric acid. Figure 6 In FIG. 8, the laser is indicated by a solid arrow.

[0047] Further, the lower cutoff region of the Bessel beam is located in the cutoff layer 200, which can be compatible with the warping or thickness fluctuation of the carrier 300, and can ensure the uniformity of the laser modification energy.

[0048] In still another optional embodiment, the carrier product 301 can also be modified by a heat-induced method. For example, in step S031, the preset region 302 of the carrier product 301 is heated, for example, a laser can be used to heat the preset region 302 to form a modified region 303; and in step S032, the modified region 303 is etched to form the connection through hole 310.

[0049] In some optional embodiments, in step S031, as shown in FIG. 9, Figure 6 a laser is used to modify the preset region 302 to form a modified region 303, and the end of the laser is located in the cutoff layer 200. As shown in FIG. 10, Figure 6 when the laser is used to modify the preset region 302, the laser can be focused on a segment, and the focused laser segment corresponds to the arrow in the figure. The end of the laser is located in the cutoff layer 200, and the end of the laser refers to the endpoint of the laser arrow.

[0050] In these optional embodiments, when a laser is used to modify the preset region 302 to form the modified region 303, by controlling the laser so that the laser tip is located within the cutoff layer 200, the influence of the laser on the temporary carrier plate 100 can be reduced, and the modified region 303 can be ensured to penetrate the entire carrier plate product 301, ensuring that the entire thickness of the carrier plate product 301 within the preset region 302 can be modified. This also improves the uniformity of the modified material and mitigates defects such as warping or thickness variations in parts of the carrier plate 300.

[0051] Optionally, the depth to which the laser penetrates the stop layer 200 does not exceed half the thickness of the stop layer 200. For example... Figure 6 As shown, the depth H3 of the laser penetration into the cutoff layer 200 does not exceed half of the thickness H4 of the cutoff layer 200, in order to improve the yield of the laser penetrating the cutoff layer 200 and affecting the temporary carrier plate 100.

[0052] In some other alternative embodiments, such as Figure 7 As shown, in step S03, a laser can also be used to dry-etch the preset area 302 to form the connecting through hole 310. Figure 7 and Figure 6 The difference is that, Figure 7 The laser directly patterns the carrier plate product 301, removing the preset area 302 of the carrier plate product 301 to form a through-hole 310. Figure 6 The laser in the process only modifies the carrier plate product 301, without removing the material of the carrier plate product 301.

[0053] In these alternative embodiments, a laser can be used to directly dry-etch the preset area 302 without modifying the substrate product 301, which simplifies the patterning process of the substrate product 301.

[0054] In some alternative embodiments, such as Figure 7 As shown, in step S03, when a laser is used to directly dry-etch the preset area 302 to form the connecting via 310, the laser tip is located within the stop layer 200. In these optional embodiments, when a laser is used to process the carrier plate article 301 to form the connecting via 310, the laser tip is located within the stop layer 200. This can, on the one hand, reduce the influence of the laser on the temporary carrier plate 100, and on the other hand, ensure that the formed connecting via 310 can penetrate the carrier plate 300.

[0055] When using a laser to directly dry-etch the preset area 302 to form the connecting via 310 in step S03, the depth of the laser penetration into the stop layer 200 shall not exceed half the thickness of the stop layer 200. For example... Figure 7As shown, the depth H5 of the laser penetration into the cutoff layer 200 does not exceed half of the thickness H6 of the cutoff layer 200, in order to improve the yield of the laser penetrating the cutoff layer 200 and affecting the temporary carrier plate 100.

[0056] There are various ways to set the thickness of the stop layer 200. In some optional embodiments, the thickness d of the stop layer 200 is 3μm to 100μm. For example, the thickness d of the stop layer 200 is 3μm, 5μm, 10μm, 25μm, 55μm, 62μm, 78μm, or 100μm.

[0057] In these alternative embodiments, when the thickness d of the stop layer 200 is within the above-mentioned range, it can both improve the protection capability of the stop layer 200 for the temporary carrier plate 100 due to the thickness d of the stop layer 200 being too small, and improve the material waste caused by the thickness d of the stop layer 200 being too large.

[0058] In some optional embodiments, the thickness of the carrier substrate 301 is 30 μm to 1500 μm. For example, the thickness of the carrier substrate 301 can be 30 μm, 60 μm, 100 μm, 300 μm, 500 μm, 700 μm, 1100 μm, 1200 μm, 1500 μm, etc., so that the final thickness of the carrier substrate 300 is between 30 μm and 1500 μm. This can both prevent the carrier substrate 300 from being too thin, which would affect the overall strength and yield of the substrate structure, and prevent the carrier substrate 300 from being too thick, which would result in an excessively thick final substrate structure, hindering the design of a thinner and lighter substrate structure.

[0059] In some optional embodiments, the material of the carrier article 301 is the same as that of the temporary carrier 100. For example, referring to the above, both the carrier article 301 and the temporary carrier 100 are made of glass, which can reduce the fabrication cost of the substrate structure and improve the fabrication efficiency of the substrate structure.

[0060] In some alternative embodiments, such as Figure 8 As shown, after step S03, the following is also included: Step S04: As Figure 9 As shown, a conductive part 410 is formed within the connecting through hole 310.

[0061] Step S05: As Figure 10 As shown, a first conductive layer 420 is prepared on the side of the carrier plate 300 opposite to the temporary carrier plate 100. The first conductive layer 420 includes a first signal line 421, and at least one of the first signal lines 421 is electrically connected to the conductive portion 410.

[0062] Optionally, the first conductive layer may include multiple first signal lines 421, and the line widths of the multiple first signal lines 421 may be the same or different. Optionally, one or more of the multiple first signal lines 421 are electrically connected to the conductive portion 410. For example, the number of conductive portions 410 is the same as the number of first signal lines 421, and the first signal lines 421 and conductive portions 410 are arranged in a one-to-one correspondence, with each first signal line 421 in contact with the conductive portion 410. Alternatively, the number of first signal lines 421 is greater than the number of conductive portions 410, and a portion of the multiple first signal lines 421 are in contact with the conductive portion 410, while another portion of the first signal lines 421 are arranged on the surface of the carrier plate 300 and do not contact the conductive portion 410.

[0063] Step S06: As Figure 11 As shown, the temporary carrier plate 100 and the stop layer 200 are removed.

[0064] Step S07: As Figure 12 As shown, a second conductive layer 430 is prepared on the side of the conductive portion 410 opposite to the first conductive layer 420. The second conductive layer 430 includes a second signal line 431. At least one second signal line 431 is electrically connected to the conductive portion 410, so that the second signal line 431 can be electrically connected to the first signal line 421 through the conductive portion 410.

[0065] Optionally, the second conductive layer may include multiple second signal lines 431, the line widths of which may be the same or different. Optionally, one or more of the multiple second signal lines 431 are electrically connected to the conductive portion 410. For example, the number of conductive portions 410 is the same as the number of second signal lines 431, and the second signal lines 431 and conductive portions 410 are arranged in a one-to-one correspondence, with each second signal line 431 in contact with a conductive portion 410. Alternatively, the number of second signal lines 431 is greater than the number of conductive portions 410, a portion of the multiple second signal lines 431 are in contact with the conductive portion 410, and another portion of the second signal lines 431 are arranged on the surface of the carrier plate 300 and do not contact the conductive portion 410.

[0066] Optionally, the carrier plate 300 can be flipped before step S07 to facilitate the fabrication of the second conductive layer 430 on top of the carrier plate 300.

[0067] In these optional embodiments, after forming the connection via 310 on the carrier plate 300 in step S03, a conductive portion 410 may be formed within the connection via 310 in step S04. Then, in step S05, a first conductive layer 420 is formed on the surface of the carrier plate 300 facing away from the stop layer 200. The first conductive layer 420 includes a first signal line 421, at least one of which is electrically connected to the conductive portion 410, such that the first signal line 421 can be electrically connected to the conductive material of the carrier plate 300 facing the temporary carrier plate 100 through the conductive portion 410. Next, in step S06, the temporary carrier plate 100 and the stop layer 200 are removed, so that the surface of the carrier plate 300 facing the temporary carrier plate 100 can be exposed. In the final step S07, a second conductive layer 430 is prepared on the side of the conductive portion 410 opposite to the first conductive layer 420. The second conductive layer 430 includes a second signal line 431, and at least one second signal line 431 is electrically connected to the conductive portion 410, so that the second signal line 431 can be electrically connected to the first signal line 421 through the conductive portion 410.

[0068] Optional, such as Figure 12 As shown, when the substrate structure includes multiple conductive layers, for example, when the first conductive layer 420 is away from the carrier plate 300, multiple first signal line layers 440 can also be provided. The first signal line layer 440 includes first signal lines. Then, before step S06, the method further includes: preparing n first insulating spacer layers 511 and m first signal line layers 440 on the side of the first conductive layer 420 away from the carrier plate 300. The first insulating spacer layers 511 are located between adjacent first conductive layers 420 and first signal line layers 440, or the first insulating spacer layers 511 are located between two adjacent first signal line layers 440, where n and m are positive integers greater than 1. Before removing the cutoff layer 200 and the temporary carrier plate 100 in step S06, the temporary carrier plate 100 can also provide support to the carrier plate 300. At this time, preparing n first insulating spacer layers 511 and m first signal line layers 440 on the first conductive layer 420 can improve the fabrication efficiency and yield of the substrate structure.

[0069] Optionally, vias can be provided on the insulating spacer layer between two adjacent conductor layers, and the conductors of adjacent first conductor layers 420 and first signal line layers 440 can be connected by vias, or two adjacent first signal line layers 440 can be connected by vias. Optionally, a first protective layer 521 is provided on the side of the first signal line layer 440 facing away from the carrier board 300. The first protective layer 521 has a first opening 521a, which can be used to provide a solder joint 530, so that the substrate structure can be electrically connected to external devices through the solder joint 530.

[0070] Optionally, a buffer layer can be arranged between the carrier plate 300 and the first conductive layer 420, which can improve the adhesion of the first conductive layer 420 on the carrier plate 300.

[0071] Similarly, the second conductive layer 430 can be provided with p second insulating spacer layers 512 and q second signal line layers 450 on the side away from the carrier plate 300. Optionally, after step S07, the method further comprises: preparing p second insulating spacer layers 512 and q second signal line layers 450 on the side of the second conductive layer 430 away from the carrier plate 300, the second insulating spacer layer 512 being arranged between adjacent second conductive layers 430 and second signal line layers 450, or the first insulating spacer layer 511 being arranged between two adjacent first signal line layers 440, p and q being positive integers greater than 1. Optionally, the second conductive layer 430 is provided with a second protective layer 522 on the side away from the carrier plate 300, the second protective layer 522 being provided with a second opening 522a, and the second opening 522a can be used to arrange a soldering portion 530, so that the substrate structure can be electrically connected to an external device through the soldering portion 530.

[0072] The conductive portion 410 can be arranged in various ways. For example, the material of the conductive portion 410 includes copper, silver, gold, iron, titanium, and other metals with high conductivity, so that the conductive portion 410 has good conductivity. Optionally, the conductive portion 410 can include a seed conductive layer 411 and an electroplated conductive layer 412. The seed conductive layer 411 can be coated on the inner wall surface of the connecting through hole 310 and enclosed to form a space, and the electroplated conductive layer 412 can be filled in the space, so that the seed conductive layer 411 and the electroplated conductive layer 412 can be combined to form the conductive portion 410. Optionally, the seed conductive layer 411 includes a titanium layer and a copper layer, and the titanium layer can be directly attached to the inner wall surface of the connecting through hole 310. The copper layer is located on the side of the titanium layer facing the connecting through hole 310. Optionally, the material of the electroplated conductive layer 412 can include copper, so as to improve the conductivity of the conductive portion 410 and reduce the manufacturing cost of the conductive portion 410.

[0073] Optionally, the first conductive layer 420 can also include a first seed conductive layer 411 and a first electroplated conductive layer 412. The first seed conductive layer 411 is attached to the surface of the carrier plate 300, and the first electroplated conductive layer 412 is attached to the surface of the first seed conductive layer 411.

[0074] Optionally, the second conductive layer 430 can also be provided with other conductive layers on the side away from the temporary carrier plate 100. After step S07, the method can further continue to prepare an insulating layer 510 and other conductive layers on the side of the second conductive layer 430 away from the temporary carrier plate 100.

[0075] When the conductive portion 410 includes the aforementioned seed conductive layer 411 and electroplated conductive layer 412, in some optional embodiments, such as Figure 13 As shown, step S04 includes: Step S041: As Figure 14 As shown, a seed conductive material layer 20 is provided on the side of the carrier plate 300 away from the temporary carrier plate 100. The seed conductive material layer 20 covers the surface of the carrier plate 300 away from the temporary carrier plate 100, the side wall surface of the carrier plate 300 facing the connection through hole 310, and the surface of the stop layer 200 exposed by the connection through hole 310.

[0076] Step S042: As Figure 15 As shown, an electroplated conductive material layer 30 is provided on the side of the seed conductive material layer 20 away from the substrate. The electroplated conductive material layer 30 and the seed conductive layer 411 are combined to form a conductive material layer. The electroplated conductive layer 412 covers the surface of the carrier plate 300 away from the temporary carrier plate 100 and fills the connection through hole 310.

[0077] Step S043: As Figure 16 As shown, the conductive material layer is patterned to form the conductive portion 410 located in the connecting via 310.

[0078] In these optional embodiments, firstly, in step S041, a seed conductive material layer 20 is formed on the temporary carrier plate 100. The seed conductive material layer 20 can cover the exposed surfaces of the carrier plate 300 and the stop layer 200, and form a groove within the connecting through hole 310. Next, in step S042, an electroplated conductive material layer 30 is prepared. The electroplated conductive material layer 30 covers the exposed surface of the seed conductive material layer 20, and the electroplated conductive material layer 30 and the seed conductive layer 411 are combined to form a conductive material layer. Finally, in step S043, the conductive material layer is patterned to form a conductive portion 410, wherein the seed conductive material layer 20 forms the aforementioned seed conductive layer 411, and the electroplated conductive material layer 30 forms the aforementioned electroplated conductive layer 412.

[0079] Optionally, in step S043, the conductive material layer located on the side of the carrier plate 300 opposite to the temporary carrier plate 100 can be removed by grinding or wet etching to form the conductive portion 410 located in the connecting via 310. This process is mature and can reduce the fabrication cost of the substrate structure.

[0080] like Figure 17 As shown, an embodiment of the first aspect of this application also provides a method for fabricating a substrate structure, comprising: Step S01': Set a stop layer 200 on one side of the temporary carrier plate 100.

[0081] Step S02': a carrier product 301 is arranged on the side of the stop layer 200 away from the temporary carrier 100, the carrier product 301 having a preset area 302.

[0082] Step S03': the preset area of the carrier product 301 is patterned using a laser to form a carrier 300 having a connecting through hole 310 arranged through the carrier 300.

[0083] In the method for manufacturing the substrate structure provided in the embodiments, first, the stop layer 200 is arranged on the temporary carrier 100, then the carrier product 301 is arranged on the side of the stop layer 200 away from the temporary carrier 100, and finally the carrier product 301 is patterned using a laser to form the carrier 300 having the connecting through hole 310, which can be used to arrange the conductive part 410 to realize the interconnection of the signal lines on the two surfaces of the carrier 300. When the carrier product 301 is patterned using a laser, due to the presence of the stop layer 200, on the one hand, the etching depth can be increased, for example, the end of the laser is located in the carrier product 100, so that the connecting through hole 310 can completely penetrate through the carrier 300; and due to the presence of the stop layer 200, even if the carrier product 301 is over-etched, it only affects the stop layer 200 and does not affect the temporary carrier 100, so the support performance of the temporary carrier 100 is not affected, and the subsequent process of the substrate structure is not affected. Therefore, by arranging the stop layer 200 on the temporary carrier 100 before patterning the carrier product 301, the manufacturing precision of the connecting through hole 310 can be ensured, and the process performance of the substrate structure can be improved. Thus, the problem that the ultra-thin glass is difficult to directly process and difficult to achieve ultra-thin by thinning is solved, so that the ultra-thin glass can be used as a carrier glass.

[0084] In the method for manufacturing the substrate structure provided in the related art, the opening processing is usually directly performed on the glass carrier, for example, the etching processing is directly performed on the glass carrier to form the via hole. The etching process can use glass double-sided etching to form a through hole, or glass single-sided etching to form a blind hole and then back-thinning to form a through hole. The thickness of the glass carrier is inevitably affected during the etching process, which makes it difficult to accurately control the thickness of the glass carrier. Moreover, since the etching processing is directly performed on the glass carrier, the glass carrier is required to have a certain structural strength, which leads to the problems that the ultra-thin glass carrier is difficult to process and the small hole of the ultra-thin glass carrier is difficult to process.

[0085] In the method for manufacturing the substrate structure provided in the embodiments of the present application, the carrier product 301 is first arranged on the temporary carrier 100 through the cutoff layer 200. Since the temporary carrier 100 has a good supporting effect, the carrier product 301 can be ultra-thin glass with a small thickness. Due to the existence of the cutoff layer 200, when the carrier product 301 is subjected to a patterning process to form the connecting through hole 310, for example, when the connecting through hole 310 is formed by etching, over-etching can be performed to ensure the yield of the connecting through hole 310. Therefore, the embodiments of the present application can not only use ultra-thin glass as the carrier product 301, but also ensure the yield of the connecting through hole 310 on the carrier 300.

[0086] In the related art, for a glass carrier with a large thickness, a blind hole is first formed, and then part of the glass carrier material at the bottom of the blind hole is removed by grinding to form a through hole. The process is complex. In the method for manufacturing the substrate provided in the embodiments of the present application, even if a conventional thickness glass, for example, a glass with a large thickness, is used as the carrier 300, due to the existence of the cutoff layer 200, over-etching can be performed on the carrier product 301 to ensure the yield of the connecting through hole 310.

[0087] Therefore, the present application can use ultra-thin glass to conventional thickness glass as the carrier 300, and can form the connecting through hole 310 without increasing the grinding process after forming the blind hole. When the conductive part 410 is manufactured, the carrier 300 with a thickness meeting the requirements can be formed by grinding.

[0088] The embodiments of the second aspect of the present application further provide a substrate structure manufactured by any of the above-mentioned first aspect embodiments. Since the substrate structure of the embodiments of the present application is manufactured by the method for manufacturing the substrate structure of any of the above-mentioned first aspect embodiments, the substrate structure of the embodiments of the present application has the beneficial effects of any of the above-mentioned first aspect embodiments, which will not be repeated here.

[0089] The embodiments of the third aspect of the present application further provide a chip packaging structure comprising the substrate structure of any of the above-mentioned second aspect embodiments or the substrate structure manufactured by the method for manufacturing the substrate structure of any of the above-mentioned first aspect embodiments. Since the chip packaging structure of the third aspect of the present application comprises the substrate structure of any of the above-mentioned second aspect embodiments or the substrate structure manufactured by the method for manufacturing the substrate structure of any of the above-mentioned first aspect embodiments, the chip packaging structure of the third aspect of the present application has the beneficial effects of the substrate structure of any of the above-mentioned second aspect embodiments or the substrate structure manufactured by the method for manufacturing the substrate structure of any of the above-mentioned first aspect embodiments.

[0090] The chip packaging structure in the embodiments of the present application includes but is not limited to a mobile phone, a personal digital assistant (PDA), a tablet computer, a personal computer, a desktop computer, an electronic book, a television, an access control, a smart fixed telephone, a console and the like devices having a display function.

[0091] Although the present application has been described with reference to the preferred embodiments, various modifications can be made to the present application without departing from the scope of the present application and equivalent elements can be substituted for the elements thereof. In particular, the technical features mentioned in each of the embodiments can be combined in any manner as long as there is no structural conflict. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A method of fabricating a substrate structure, the method comprising: The method comprises the following steps: ​ a stop layer is arranged on one side of a temporary carrier plate; a carrier plate product is arranged on the side of the stop layer away from the substrate, the carrier plate product having a preset region; the preset region of the carrier plate product is subjected to a patterning process to form a carrier plate having connecting through holes.

2. The production method according to claim 1, characterized by, In the step of subjecting the preset region of the carrier plate product to a patterning process to form a carrier plate having connecting through holes: a modification process is performed on the preset region to form a modified region; the carrier plate product material of the modified region is removed to form the connecting through holes; Preferably, in the step of removing the carrier plate product material of the modified region to form the connecting through holes, a wet etching process is performed on the carrier plate product of the modified region using an etching liquid to form the connecting through holes; Preferably, the material of the stop layer comprises a material resistant to corrosion by the etching liquid; Preferably, the material of the stop layer comprises a glue material resistant to corrosion by the etching liquid; Preferably, the material of the stop layer comprises at least one of silicone resin, polystyrene, polybutadiene, polyisocyanate, and epoxy resin.

3. The preparation method according to claim 2, characterized in that, In the step of performing a modification process on the preset region to form a modified region: a modification process is performed on the preset region using a laser to form a modified region, and the end of the laser is located in the stop layer.

4. The method of claim 1, wherein, In the step of subjecting the preset region of the carrier plate product to a patterning process to form a carrier plate having connecting through holes: a dry etching process is performed on the preset region using a laser to form the connecting through holes; Preferably, in the step of performing a dry etching process on the preset region using a laser to form the connecting through holes, the end of the laser is located in the stop layer.

5. The preparation method according to claim 1, characterized in that, The thickness of the stop layer is 3 μm to 100 μm.

6. The preparation method according to claim 1, wherein the thickness of the carrier plate product is 30 μm to 1500 μm; and / or, the material of the carrier plate product is the same as the material of the temporary carrier plate.

7. The preparation method according to claim 1, characterized in that, After the step of subjecting the preset region of the carrier plate product to a patterning process to form a carrier plate having connecting through holes, the method further comprises the following steps: a conductive part is prepared in the connecting through hole; a first wire layer is prepared on the side of the carrier plate away from the temporary carrier plate, the first wire layer comprising first signal lines, at least one of the first signal lines being electrically connected to the conductive part; the temporary carrier plate and the stop layer are removed; a second wire layer is prepared on the side of the conductive part away from the first wire layer, the second wire layer comprising second signal lines, at least one of the second signal lines being electrically connected to the conductive part, so that the second signal lines can be electrically connected to the first signal lines through the conductive part; Preferably, before the step of removing the temporary carrier plate and the stop layer, the method further comprises the following steps: n first insulating spacing layers and m first signal line layers are prepared on the side of the first wire layer away from the carrier plate, the first insulating spacing layer being arranged between adjacent first wire layers and first signal line layers, or the first insulating spacing layer being arranged between two adjacent first signal line layers, n and m being positive integers greater than 1; Preferably, after the step of preparing the second conductive layer on the side of the conductive part away from the first conductive layer, the method further comprises: preparing p second insulating spacer layers and q second signal line layers on the side of the second conductive layer away from the carrier plate, the second insulating spacer layers being located between adjacent second conductive layers and second signal line layers, or the first insulating spacer layers being located between two adjacent first signal line layers, p and q being positive integers greater than 1.

8. The preparation method according to claim 7, characterized in that, In the step of preparing the conductive part in the connection through hole: a seed conductive material layer is arranged on the side of the carrier plate away from the temporary carrier plate, the seed conductive material layer covering the surface of the carrier plate away from the temporary carrier plate, the side wall surface of the carrier plate facing the connection through hole, and the surface of the stop layer exposed by the connection through hole; a plating conductive material layer is arranged on the side of the seed conductive material layer away from the substrate, the plating conductive material layer and the seed conductive material layer combining to form a conductive material layer, the plating conductive material layer covering the surface of the carrier plate away from the temporary carrier plate and filling the connection through hole; the conductive material layer is subjected to a patterning process to form the conductive part located in the connection through hole; Preferably, in the step of patterning the conductive material layer to form the conductive part located in the connection through hole: the conductive material layer located on the side of the carrier plate away from the temporary carrier plate is removed by grinding or wet etching to form the conductive part located in the connection through hole.

9. A method of fabricating a substrate structure, the method comprising: The method comprises: arranging a stop layer on one side of a temporary carrier plate; arranging a carrier plate product on the side of the stop layer away from the substrate, the carrier plate product having a preset area; using a laser to perform a patterning process on the preset area of the carrier plate product to form a carrier plate having a connection through hole, the connection through hole penetrating through the carrier plate.

10. A substrate structure, characterized by, The method is prepared by any one of claims 1-9.

11. A chip package structure, comprising: The substrate structure of claim 10 is included. The substrate structure of claim 10 is included.

Images