Cutting device and semiconductor material processing equipment

Abstract

The invention discloses a cutting device and semiconductor material processing equipment. The cutting device comprises a clamping mechanism and a cutting mechanism. Wherein the clamping mechanism is used for clamping and fixing a crystal ingot, and the stability of the crystal ingot in the cutting process is guaranteed; the cutting mechanism is used for cutting the crystal ingot to obtain a substrate. According to the scheme, the cutting mechanism is a double-saw-wire cutting mechanism. The cutting mechanism comprises an auxiliary saw wire and a main saw wire, and the auxiliary saw wire has a preset advance amount relative to the main saw wire. The auxiliary saw wire forms a narrow cutting seam on the crystal ingot, the main saw wire performs cutting again on the basis of the narrow cutting seam, and finally a wide cutting seam is formed; compared with the mode that a wide cutting seam is obtained directly through a single saw wire in the prior art, the saw wire load can be balanced, the cutting efficiency can be improved, meanwhile, saw wire abrasion is reduced, the service life of the saw wire is prolonged, and the consumable cost is reduced.

Description

Technical Field

[0001] This application relates to the field of semiconductor material processing technology, and in particular to a cutting device and semiconductor material processing equipment. Background Technology

[0002] Crystal ingot cutting includes wire sawing. Related technologies employ single-wire sawing of crystal ingots. Due to the high hardness of crystal ingots, single-wire sawing presents significant resistance, necessitating a reduction in wire linear speed and consequently lower cutting efficiency. Furthermore, the large load difference between the middle and ends of the single-wire saw during cutting leads to more severe wear in the middle section compared to the ends, resulting in a shorter wire lifespan and increased consumable costs.

[0003] Therefore, how to improve the cutting rate while reducing the cost of consumables has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0004] This application proposes a cutting apparatus to increase the cutting rate while reducing consumable costs. This application also provides a semiconductor material processing apparatus incorporating the above-described cutting apparatus.

[0005] To achieve the above objectives, this application provides a cutting device, including a clamping mechanism and a cutting mechanism;

[0006] The clamping mechanism is used to clamp the crystal ingot, and the cutting mechanism is used to cut the crystal ingot to obtain a substrate;

[0007] The cutting mechanism includes a secondary saw wire and a main saw wire, wherein the diameter of the secondary saw wire is smaller than the diameter of the main saw wire;

[0008] The secondary saw wire has a leading amount relative to the main saw wire, and the leading amount is the distance difference between the secondary saw wire and the main saw wire along the axis perpendicular to the ingot.

[0009] Optionally, in the above-described cutting device, the secondary saw wire is connected to a first motor, and the first motor is used to adjust the first linear speed of the secondary saw wire;

[0010] The main saw wire is connected to a second motor, which is used to adjust the second linear speed of the main saw wire.

[0011] The first linear velocity is less than the second linear velocity.

[0012] Optionally, the above-mentioned cutting device also includes a speed measuring device, a tension monitor, and a controller;

[0013] The speed measuring device is used to measure the first linear velocity and the second linear velocity;

[0014] The tension monitor is used to measure the tension of the auxiliary saw wire and the main saw wire;

[0015] The controller is used to adjust the first linear velocity and the second linear velocity according to the tension, so that the speed difference between the first linear velocity and the second linear velocity is within a preset range.

[0016] Optionally, the cutting device described above also includes a debris collection mechanism for collecting debris generated during cutting.

[0017] Optionally, in the above-mentioned cutting device, the debris collection mechanism includes a vacuum pump, an annular negative pressure chamber, and a negative pressure suction nozzle;

[0018] The vacuum pump is connected to the annular negative pressure chamber to create a negative pressure within the annular negative pressure chamber;

[0019] The annular negative pressure cavity is sleeved outside the crystal ingot, and the annular negative pressure cavity corresponds to the cutting position;

[0020] The annular negative pressure chamber is provided with a negative pressure suction nozzle on the side facing the cutting position. One end of the negative pressure suction nozzle is connected to the annular negative pressure chamber, and the other end of the negative pressure suction nozzle is a free end, which faces the cutting position.

[0021] Optionally, in the above-mentioned cutting device, the clamping mechanism includes a support platform, a rotating component, and an angle adjusting component;

[0022] The crystal ingot is placed on the first side of the support platform, and the rotating member is arranged on the second side of the support platform. The first side and the second side are opposite to each other. The rotation axis of the rotating member is collinear with the axis of the crystal ingot.

[0023] The support platform is hinged to the rotating component, and the angle adjustment component is used to adjust the angle between the rotation axis of the support platform and the rotating component.

[0024] Optionally, in the above-mentioned cutting device, the support platform is a silicon carbide ceramic platform.

[0025] Optionally, the above-mentioned cutting device also includes a shock-absorbing frame, which includes support legs and a worktable;

[0026] The clamping mechanism and the cutting mechanism are mounted on the worktable;

[0027] The support legs are distributed around the circumference of the worktable, one end of the support leg is connected to the worktable, and the other end of the support leg is provided with a shock-absorbing pad.

[0028] The shock-absorbing pad is shaped like a frustum. The end of the shock-absorbing pad with a smaller diameter is connected to the support leg, and the end of the shock-absorbing pad with a larger diameter is located on the ground.

[0029] Optionally, in the above-mentioned cutting device, the shock-absorbing pad foot includes multiple layers of shock-absorbing pads, which are stacked in a vertical direction;

[0030] The shock-absorbing pad includes a steel wire mesh and a rubber layer, wherein the mesh openings of the steel wire mesh are filled with the rubber layer;

[0031] The shock-absorbing pad is shaped like a frustum. The end of the shock-absorbing pad with a smaller diameter is connected to the support leg, and the end of the shock-absorbing pad with a larger diameter is located on the ground.

[0032] This application also provides a semiconductor material processing apparatus, including a cutting device, wherein the cutting device is the cutting device described in any of the above embodiments.

[0033] This application provides a cutting device, including a clamping mechanism and a cutting mechanism. The clamping mechanism is used to clamp and fix the crystal ingot, ensuring the stability of the crystal ingot during the cutting process; the cutting mechanism is used to cut the crystal ingot to obtain a substrate. In this solution, the cutting mechanism is a dual-wire cutting mechanism. The cutting mechanism includes a secondary wire and a primary wire, with the secondary wire having a preset lead over the primary wire. The secondary wire forms a narrow kerf on the crystal ingot, and the primary wire cuts again on top of the narrow kerf, ultimately forming a wide kerf. Compared to the related technology that directly obtains a wide kerf using a single wire, this method can balance the wire load, improve cutting efficiency, reduce wire wear, extend wire life, and reduce consumable costs.

[0034] This application also discloses a semiconductor material processing apparatus, including a cutting device, which is the cutting device described in any of the above embodiments. Since the cutting device has the aforementioned technical effects, the semiconductor material processing apparatus having this cutting device also has the same technical effects, and will not be described further here. Attached Figure Description

[0035] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the accompanying drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are merely some examples or embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort, and this application can be applied to other similar scenarios based on the provided drawings. Unless obvious from the linguistic context or otherwise specified, the same reference numerals in the drawings represent the same structures or operations.

[0036] Figure 1 This is a schematic diagram of the cutting device provided in the embodiments of this application;

[0037] Figure 2This is a schematic diagram of the structure of the crystal ingot and the main saw wire and the auxiliary saw wire of the cutting mechanism provided in the embodiments of this application.

[0038] in:

[0039] 1-Clamping mechanism; 2-Cutting mechanism; 21-Secondary saw wire; 22-Main saw wire; 3-Ingot; 4-Scrap collection mechanism; 5-Shock-absorbing frame; 51-Support leg; 52-Workbench; 53-Shock-absorbing pad. Detailed Implementation

[0040] The present application will now be described in further detail with reference to the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are merely illustrative of the application and not intended to limit it. The described embodiments are only a part of the embodiments of the present application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without inventive effort are within the scope of protection of the present application.

[0041] It should be noted that, for ease of description, only the parts relevant to the application are shown in the accompanying drawings. Unless otherwise specified, the embodiments and features described in this application can be combined with each other.

[0042] It should be understood that the terms "system," "apparatus," "unit," and / or "module" used in this application are a method of distinguishing different components, elements, parts, sections, or assemblies at different levels. However, if other terms can achieve the same purpose, they may be replaced by other expressions.

[0043] As indicated in this application and claims, unless the context clearly indicates otherwise, the words "a," "an," "a," and / or "the" are not specifically singular and may include the plural. Generally, the terms "comprising" and "including" only indicate the inclusion of expressly identified steps and elements, which do not constitute an exclusive list, and the method or apparatus may also include other steps or elements. An element defined by the phrase "comprising an..." does not exclude the presence of other identical elements in the process, method, product, or apparatus that includes the element.

[0044] In the description of the embodiments of this application, unless otherwise stated, " / " means "or", for example, A / B can mean A or B; "and / or" in this document is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Furthermore, in the description of the embodiments of this application, "multiple" refers to two or more.

[0045] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature.

[0046] Crystal ingots are cylindrical or bulk bodies obtained through crystal growth technology and are used as raw materials for preparing substrates. Substrates are the products of slicing crystal ingots into thin slices, grinding them flat, and polishing them.

[0047] This application discloses a cutting device, including a clamping mechanism 1 and a cutting mechanism 2. The clamping mechanism 1 is used to clamp and fix the crystal ingot 3 to ensure the positional stability of the crystal ingot 3 during the cutting process, thereby improving the cutting accuracy; the cutting mechanism 2 is used to cut the crystal ingot 3 to obtain a substrate.

[0048] In this design, the cutting mechanism 2 is a dual-wire cutting mechanism. The cutting mechanism 2 includes a secondary saw wire 21 and a primary saw wire 22, with the secondary saw wire 21 having a lead over the primary saw wire 22. It should be noted that the secondary saw wire 21 is closer to the ingot than the primary saw wire 22, and the lead of the secondary saw wire 21 relative to the primary saw wire 22 is the distance difference between the secondary saw wire 21 and the primary saw wire 22 along a direction perpendicular to the axis of the ingot 3.

[0049] The saw wire can be made by bonding diamond abrasive grains to a stainless steel cutting wire through electroplating, brazing, or other methods. The ingot 3 is cut by the high-speed reciprocating motion of the saw wire.

[0050] When the dual-wire cutting mechanism cuts the crystal ingot 3, the secondary saw wire 21 first cuts the crystal ingot 3 (the secondary saw wire 21 pre-cuts the crystal ingot 3), forming micro-cracks at the cutting position to reduce the load on the main saw wire 22; then the main saw wire 22 cuts the position cut by the secondary saw wire 21, taking charge of the main cutting. This solution improves cutting efficiency by balancing the saw wire load through the coordinated cutting of the secondary saw wire 21 and the main saw wire 22.

[0051] Optionally, the diameter of the secondary saw wire 21 is smaller than the diameter of the main saw wire 22.

[0052] In some embodiments, the diameter of the secondary saw wire 21 is 80μm-100μm, the particle size of the diamond abrasive grains of the secondary saw wire 21 is 2μm-3μm, and the bonding force between the diamond abrasive grains and the stainless steel cutting wire is ≥40N.

[0053] The diameter of the main saw wire 22 is 120μm-160μm, the diamond abrasive grains of the secondary saw wire 21 have a particle size of 4μm-6μm, and the bonding force between the diamond abrasive grains and the stainless steel cutting wire is ≥50N.

[0054] The secondary saw wire 21 forms a narrow cutting kerf on the ingot 3, and the main saw wire 22 cuts again on the basis of the narrow cutting kerf, ultimately forming a wide cutting kerf. Compared with the method of obtaining a wide cutting kerf directly through a single saw wire in related technologies, this method can balance the saw wire load, improve cutting efficiency, reduce saw wire load, reduce wear, extend saw wire service life, and reduce consumable costs.

[0055] In some embodiments, the dual saw wires are load-balanced, the wear rate of the main saw wire 22 is reduced by 40%, a single wire can cut 6 to 8 6-inch substrates, and the consumable cost can be reduced by 35%.

[0056] The lead of the secondary saw wire 21 is adjusted according to the set crystal orientation. Optionally, the lead of the secondary saw wire 21 relative to the main saw wire 22 is 0.5mm-1.0mm to reduce the tension of the main saw wire 22. The lead of the secondary saw wire 21 relative to the main saw wire 22 is not limited to the above range, and the lead is designed by those skilled in the art according to design requirements.

[0057] Taking the <11-20> crystal orientation as an example, the lead of the secondary saw wire relative to the main saw wire is 1mm-1.2mm, and the tension of the main saw wire can be reduced by 10%-15%.

[0058] The auxiliary saw wire 21 and the main saw wire 22 can share a motor. One motor drives the auxiliary saw wire 21 and the main saw wire 22 to reciprocate, while adjusting the linear speed of the auxiliary saw wire 21 and the main saw wire 22.

[0059] The auxiliary saw wire 21 and the main saw wire 22 can be driven by a first motor and a second motor, respectively. Specifically, the auxiliary saw wire 21 is connected to the first motor, which is used to adjust the first linear speed of the auxiliary saw wire 21, and the main saw wire 22 is connected to the second motor, which is used to adjust the second linear speed of the main saw wire 22.

[0060] The main saw wire 22 and the auxiliary saw wire 21 are driven by their respective motors. The first linear speed of the auxiliary saw wire 21 is driven by the first motor alone, and the second linear speed of the main saw wire 22 is driven by the second motor alone. This improves the flexibility of speed adjustment of the main saw wire 22 and the auxiliary saw wire 21, and allows the main saw wire 22 and the auxiliary saw wire 21 to maintain a preset speed difference for cutting.

[0061] The cutting device disclosed in this solution also includes a speed measuring device, a tension monitor, and a controller, with the speed measuring device and tension monitor communicating with the controller.

[0062] The speed sensor is used to measure the first linear velocity and the second linear velocity; the tension monitor is used to monitor the tension of the auxiliary saw wire 21 and the main saw wire 22; the controller adjusts the first linear velocity and the second linear velocity according to the tension measured by the tension monitor so that the speed difference between the first linear velocity and the second linear velocity is within a preset range.

[0063] In some embodiments, the first linear velocity of the secondary saw wire 21 is 20m / s-50m / s, and the second linear velocity of the main saw wire 22 is 25m / s-55m / s, with an adjustment step of 0.5m / s, to ensure that the speed difference between the secondary saw wire 21 and the main saw wire 22 is stable at 5m / s-10m / s.

[0064] <11-20> The crystal orientation cutting speed can reach 30-35m / s, which is 50% more efficient than traditional single-wire cutting, and the cutting cycle of a single 6-inch substrate is shortened to 35min-45min.

[0065] Optionally, the speed measuring device is a magnetic grating ruler; tension monitors are set at both ends and the middle of the saw wire along the length of the saw wire to realize zoned monitoring of tension; the first motor and the second motor can be brushless DC motors.

[0066] The tension adjustment range of the main saw wire 22 is 5N-8N (accuracy ±0.05N), and the tension adjustment range of the auxiliary saw wire 21 is 3N-5N (accuracy ±0.05N). The first and second linear speeds are adjusted according to the tension to compensate for tension fluctuations caused by the elastic deformation of the saw wire in real time.

[0067] During the cutting process, debris will adhere to the surface of the saw wire or inside the cutting kerf. As the debris moves with the saw wire, it causes secondary scratches on the substrate surface, with a scratch rate as high as 15%-20%, reducing the yield of finished products.

[0068] The cutting device disclosed in this solution also includes a chip collection mechanism 4, which is used to collect the chips generated during the cutting of the crystal ingot 3, reduce the adhesion of chips on the saw wire surface and the cutting seam, prevent secondary scratches on the substrate surface, reduce the scratch rate, and improve the yield of finished products.

[0069] In some embodiments of this application, the debris collection mechanism 4 includes a vacuum pump, an annular negative pressure chamber, and a negative pressure suction nozzle. Specifically, the vacuum pump is connected to the annular negative pressure chamber to create a negative pressure within the annular negative pressure chamber; the annular negative pressure chamber is fitted over the crystal ingot 3, and the annular negative pressure chamber corresponds to the cutting position; a negative pressure suction nozzle is provided on the side of the annular negative pressure chamber facing the cutting position, one end of the negative pressure suction nozzle is connected to the annular negative pressure chamber, and the other end of the negative pressure suction nozzle is a free end, which faces the cutting position.

[0070] Optionally, the end of the negative pressure nozzle facing the cutting position has an oblique cut; or, the diameter of the end of the negative pressure nozzle facing the cutting position gradually decreases.

[0071] When the dual-wire cutting mechanism cuts the crystal ingot 3, the vacuum pump of the chip collection mechanism 4 is turned on, and the chips at the cutting position of the crystal ingot 3 are sucked and collected through the negative pressure suction nozzle.

[0072] Optionally, multiple negative pressure suction nozzles are arranged circumferentially along the annular negative pressure chamber. The multiple negative pressure suction nozzles collect the debris at the cutting position at the same time. On the one hand, this avoids environmental pollution, and on the other hand, it reduces the adhesion of debris to the saw wire and the cutting seam, so as to prevent secondary scratches on the substrate surface, reduce the scratch rate, and improve the yield of finished products.

[0073] Optionally, the diameter of the inner cavity of the annular negative pressure chamber is 5mm-8mm larger than the width of the cutting slit, and the negative pressure adjustment range is 0.04Mpa-0.06Mpa. The cross-section of the annular negative pressure chamber can be circular, rectangular, or other shapes.

[0074] The negative pressure suction nozzle corresponds to the cutting slit position, and the axis of the negative pressure suction nozzle lies within the plane of the cutting slit. The plane of the cutting slit is perpendicular to the axial direction of ingot 3.

[0075] Optionally, the angle between the negative pressure suction nozzle and the tangent at the position of the corresponding ingot is 30°-60°, and the aperture of the negative pressure suction nozzle is 2mm-3mm.

[0076] The vacuum pump can be a scroll vacuum pump with a pumping capacity of 15m³ / h. 3 / h-25m 3 / h.

[0077] A collection container is installed downstream of the negative pressure chamber to collect the suctioned debris.

[0078] Optionally, the collector is equipped with two-stage filters, where the first-stage filter filters out debris with a particle size of less than 3 μm, and the second-stage filter filters out debris with a particle size of more than 3 μm, and the separated debris of different particle sizes is collected separately.

[0079] The debris collection mechanism disclosed in this plan has a debris collection rate of up to 98%.

[0080] The debris collection mechanism 4 disclosed in this solution uses suction to collect debris, which, compared to blowing to remove debris, can prevent debris from spreading in the space.

[0081] When the working current of the saw wire exceeds the rated preset value (e.g., 15%), it is necessary to increase the negative pressure of the chip collection mechanism 4 (e.g., 0.01Mpa-0.02Mpa) and at the same time reduce the feed speed (e.g., 0.3mm / min - 0.5mm / min).

[0082] The debris collection mechanism 4 is not limited to the above embodiment, but can also be other mechanisms capable of collecting debris, all of which are within the scope of protection of this application.

[0083] During the cutting process of ingot 3, cooling liquid is required. While the chip collection mechanism 4 collects chips, it can also collect coolant, with a coolant recovery rate of ≥85%, and the temperature at the cutting position is controlled at ≤60℃.

[0084] The coolant, containing 2wt%-4wt% polyethylene glycol (molecular weight 6000) and 0.5wt%-1wt% nano-SiO2 (particle size 30nm-50nm), is sprayed onto the cutting position through atomizing cooling nozzles located near the annular negative pressure chamber. The flow rate is controlled at 3 L / min-6 L / min. The coolant spraying is synchronized with the debris collection mechanism 4.

[0085] The clamping mechanism 1 includes a support platform, a rotating component, and an angle adjusting component.

[0086] The crystal ingot 3 is placed on the first side of the support platform, and the second side of the support platform is connected to the rotating component. The first side and the second side of the support platform are two opposite sides of the support platform.

[0087] The axis of rotation of the rotating component is collinear with the axis of the ingot 3. The rotating component drives the support platform to rotate, which in turn drives the ingot 3 on the support platform to rotate.

[0088] The support platform is hinged to the rotating component, and the angle adjustment component is used to adjust the angle between the rotation axis of the support platform and the rotating component.

[0089] Optionally, the rotating component includes a motor and a rotating shaft, with the output shaft of the motor connected to the rotating shaft and the rotating shaft hinged to the support platform.

[0090] The output shaft of the motor can be directly connected to the rotating shaft, or it can be connected to the rotating shaft through a transmission component. In embodiments where the output shaft of the motor is connected to the rotating shaft through a transmission component, the transmission component can be a gear assembly, a synchronous belt pulley assembly, or a sprocket assembly, etc.

[0091] The angle adjustment component can be a telescopic cylinder or a lead screw assembly, etc.

[0092] Optionally, the rotation angle of the motor-driven support platform is 0°-30°, and the angle adjustment range of the angle adjustment component is 0°-15°.

[0093] Real-time compensation reduces crystal orientation deviation to ≤0.03°, a 60% improvement over conventional devices, and improves the consistency of substrate electrical performance by 25%.

[0094] A laser interferometer is used to detect crystal orientation deviation. The laser interferometer is connected to the controller, which in turn is connected to the rotating and angle adjustment components. When the deviation exceeds the limit, the controller sends adjustment signals to the rotating and angle adjustment components to adjust the rotation and tilt angles of the support stage, ensuring that the cutting crystal orientation deviation is ≤0.05°.

[0095] The support platform can be selected as a high-temperature resistant support platform with a coefficient of thermal expansion ≤ This reduces deformation of the support platform in high-temperature environments and prevents clamping displacement caused by high-temperature deformation. Optionally, the support platform is made of silicon carbide ceramic material.

[0096] The clamping part of the clamping mechanism 1 is a commonly used ingot clamping mechanism 1 in related technologies. Optionally, the clamping mechanism 1 is a jaw or chuck, etc.

[0097] The cutting device disclosed in this solution also includes a shock-absorbing frame 5, which includes support legs 51 and a worktable 52.

[0098] Optionally, the vibration damping frame 5 is constructed by composite welding of Q345 steel and damping alloy (also known as anti-vibration alloy, which has vibration reduction and noise reduction functions; the damping alloy utilizes the large attenuation energy of the metal itself to eliminate the sources of vibration and noise). This ensures both the strength of the vibration damping frame 5 and reduces noise.

[0099] The clamping mechanism 1 and the cutting mechanism 2 are installed on the workbench 52. The support legs 51 are distributed around the workbench 52. Optionally, the support legs 51 are evenly distributed around the workbench 52. The other end of the support leg 51 is located on the ground. The other end of the support leg 51 is provided with a shock-absorbing pad 53.

[0100] The shock-absorbing feet 53 further enhance the shock absorption effect of the shock-absorbing frame 5. Together with the worktable and support legs with shock absorption function, it ensures that the frame amplitude is ≤2μm during cutting.

[0101] Optionally, the damping pad foot 53 includes multiple layers of damping pads, which are stacked vertically; the damping pad includes a wire mesh and a rubber layer, the wire mesh includes multiple mesh openings, the rubber layer is filled in the mesh openings of the wire mesh, and the damping coefficient of the damping pad is 0.4-0.5.

[0102] The number of damping layers in the shock-absorbing pad 53 ranges from four to eight.

[0103] Rubber is used as a flexible matrix to fill the mesh of the wire mesh. The wire mesh provides stable structural support for the rubber and limits excessive deformation of the rubber layer in the horizontal direction.

[0104] The shock-absorbing pad 53 is composed of a combination of steel wire mesh and rubber layer, which not only ensures effective shock absorption and cushioning, but also can withstand high loads. It has good overall structural integrity and is sturdy and durable.

[0105] Optionally, the rubber is nitrile rubber or other rubber.

[0106] The shock-absorbing pad 53 is truncated cone-shaped. The smaller diameter end of the shock-absorbing pad 53 is connected to the support leg 51, while the larger diameter end of the shock-absorbing pad 53 is located on the ground. The cross-sectional area of ​​the shock-absorbing pad 53 in the horizontal direction is larger than that of the support leg 51 in the horizontal direction, which improves the shock absorption effect and the stability of the shock-absorbing frame 5.

[0107] The system monitors in real time the tension of the main saw wire 22 and the auxiliary saw wire 21, the negative pressure value of the annular negative pressure chamber of the chip collection mechanism 4, the temperature of the coolant, and the crystal orientation deviation. The sampling frequency is 100Hz-150Hz. When at least one of the following is abnormal, an audible and visual warning is triggered (response time ≤0.3s), and a fault diagnosis report is generated.

[0108] This application also discloses a semiconductor material processing apparatus, including a cutting device, which is the cutting device described in any of the above embodiments.

[0109] Since the cutting device has the above-mentioned technical effects, semiconductor material processing equipment with the cutting device also has the same technical effects, which will not be elaborated here.

[0110] The above description is merely a preferred embodiment of this application and an explanation of the technical principles employed, and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. The scope of this application is not limited to technical solutions formed by specific combinations of the above-described technical features, but should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the above-described application concept. For example, technical solutions formed by substituting the above features with (but not limited to) technical features with similar functions disclosed in this application.

Claims

1. A cutting device, characterized in that, It includes a clamping mechanism (1) and a cutting mechanism (2); The clamping mechanism (1) is used to clamp the crystal ingot (3), and the cutting mechanism (2) is used to cut the crystal ingot (3) to obtain a substrate; The cutting mechanism (2) includes a secondary saw wire (21) and a main saw wire (22), wherein the diameter of the secondary saw wire (21) is smaller than the diameter of the main saw wire (22); The secondary saw wire (21) has a leading amount relative to the main saw wire (22), and the leading amount is the distance difference between the secondary saw wire (21) and the main saw wire (22) along the axial direction perpendicular to the ingot (3).

2. The cutting device according to claim 1, characterized in that, The secondary saw wire (21) is connected to the first motor, which is used to adjust the first linear speed of the secondary saw wire (21); The main saw wire (22) is connected to a second motor, which is used to adjust the second linear speed of the main saw wire (22); The first linear velocity is less than the second linear velocity.

3. The cutting device according to claim 2, characterized in that, It also includes a speedometer, a tension monitor, and a controller; The speed measuring device is used to measure the first linear velocity and the second linear velocity; The tension monitor is used to measure the tension of the secondary saw wire (21) and the main saw wire (22); The controller is used to adjust the first linear velocity and the second linear velocity according to the tension, so that the speed difference between the first linear velocity and the second linear velocity is within a preset range.

4. The cutting device according to claim 1, characterized in that, It also includes a debris collection mechanism (4) for collecting debris generated during cutting.

5. The cutting device according to claim 4, characterized in that, The debris collection mechanism (4) includes a vacuum pump, an annular negative pressure chamber, and a negative pressure suction nozzle; The vacuum pump is connected to the annular negative pressure chamber to create a negative pressure within the annular negative pressure chamber; The annular negative pressure cavity is sleeved outside the crystal ingot (3), and the annular negative pressure cavity corresponds to the cutting position; The annular negative pressure chamber is provided with a negative pressure suction nozzle on the side facing the cutting position. One end of the negative pressure suction nozzle is connected to the annular negative pressure chamber, and the other end of the negative pressure suction nozzle is a free end, which faces the cutting position.

6. The cutting device according to claim 1, characterized in that, The clamping mechanism (1) includes a support platform, a rotating component, and an angle adjusting component; The crystal ingot (3) is placed on the first side of the support platform, and the rotating member is arranged on the second side of the support platform. The first side and the second side are opposite to each other. The rotation axis of the rotating member is collinear with the axis of the crystal ingot (3). The support platform is hinged to the rotating component, and the angle adjustment component is used to adjust the angle between the rotation axis of the support platform and the rotating component.

7. The cutting device according to claim 6, characterized in that, The support platform is a silicon carbide ceramic platform.

8. The cutting device according to claim 1, characterized in that, It also includes a shock absorber frame (5), which includes support legs (51) and a worktable (52); The clamping mechanism (1) and the cutting mechanism (2) are installed on the workbench (52); The support leg (51) is distributed around the workbench (52) in a circumferential direction. One end of the support leg (51) is connected to the workbench (52), and the other end of the support leg (51) is provided with a shock-absorbing pad (53).

9. The cutting device according to claim 8, characterized in that, The shock-absorbing pad (53) includes multiple layers of shock-absorbing pads, which are stacked vertically. The shock-absorbing pad includes a steel wire mesh and a rubber layer. The steel wire mesh includes multiple mesh openings, and the rubber layer fills the mesh openings of the steel wire mesh. The shock-absorbing pad (53) is truncated cone-shaped. The smaller diameter end of the shock-absorbing pad (53) is connected to the support leg (51), and the larger diameter end of the shock-absorbing pad (53) is located on the ground.

10. A semiconductor material processing apparatus, characterized in that, Includes a cutting device, wherein the cutting device is the cutting device according to any one of claims 1-9.

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