Split type wafer tray and semiconductor equipment

Abstract

The invention provides a split type wafer tray and semiconductor equipment, the bottom of the outer edge of the split type wafer tray is provided with a supporting barrel for supporting the split type wafer tray, and the split type wafer tray comprises an inner tray, an outer ring and a cover ring. The inner tray is provided with a bearing surface for bearing a wafer; the outer ring is arranged in the circumferential direction of the inner tray, and a first supporting face is arranged on the outer ring to support the inner tray. The cover ring is arranged around the bearing surface on the inner tray and at least covers part of the top surface of the outer ring. According to the split type wafer tray and the semiconductor device, the wafer tray is divided into the inner tray, the outer ring and the cover ring, the inner tray is used for bearing the wafer, the outer ring is used for abutting against the supporting barrel, and the cover ring is used for protecting the inner tray and the outer ring, so that the temperature difference of the inner tray is reduced; and the possibility that the inner tray and the outer ring are fractured due to overlarge temperature difference is reduced. And the cover ring and the inner tray are designed in a split manner, so that the temperature of the cover ring surrounding the wafer during reaction is reduced, and the film forming quality of the wafer is improved.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing, and in particular to a split wafer tray and semiconductor equipment. Background Technology

[0002] Chemical vapor deposition (CVD) reactors are used to form epitaxial layers on the surface of wafers. A typical CVD reactor includes a reaction chamber, a tray, and spray nozzles. The tray has a tank to hold the wafer. Both the tray and the gas spray nozzles are located within the reaction chamber and are positioned opposite each other. After reactive gases are introduced into the reaction chamber through the gas spray nozzles, the reactive gases form an epitaxial layer on the wafer surface.

[0003] In existing technologies, such as Figure 1 As shown, within the reaction chamber, the lower part of tray 1 abuts against support barrel 2. A heater 3 is installed inside support barrel 2 to heat tray 1 and the wafers carried on it. Along the radial direction of tray 1, the outer edge of tray 1 protrudes beyond the outer edge of support barrel 2 to achieve automatic transfer of tray 1. The heater 3 is located inside support barrel 2. Figure 2 As shown, when the reaction chamber is in a reaction state, there is a temperature difference in the radial direction of the tray 1. Since the outermost radial part of the tray 1 cannot directly receive the heat radiation from the heater 3, the temperature at this point (1004℃) is the lowest, while the temperature of the tray 1 near the heater 3 (1093℃) is the highest. The temperature difference on the tray 1 can reach 89℃. The thermal stress generated by the excessive temperature difference will cause the tray 1 to crack, affecting the service life of the tray 1. Summary of the Invention

[0004] The purpose of this invention is to provide a split wafer tray and semiconductor device, which has the advantage of low temperature difference on the inner tray used to hold the wafer.

[0005] To achieve the above objectives, the present invention provides a split wafer tray, comprising: an inner tray, the upper surface of which includes a bearing surface for supporting wafers and a non-bearing surface surrounding the bearing surface, wherein the bearing surface and the non-bearing surface are horizontally transitioned; an outer ring, which is disposed circumferentially along the inner tray, the outer ring including an annular support portion, the support portion including a first support surface, the inner tray being supported on the first support surface; and a cover ring, which is disposed around the bearing surface on the inner tray, the cover ring at least covering a portion of the non-bearing surface to limit the wafers supported on the bearing surface, and the cover ring at least covering a portion of the top surface non-bearing surface of the outer ring.

[0006] Optionally, the outer edge of the inner tray and the bottom of the cover ring abut against the first support surface of the outer ring.

[0007] Optionally, the inner tray includes a tray body and a first positioning part, the first positioning part being located at the bottom of the tray body and inside the outer edge of the inner tray, the first positioning part extending from the bottom of the tray body in a direction away from the bearing surface; along the radial direction of the inner tray, the first positioning part abuts against the outer ring.

[0008] Optionally, the outer ring further includes a second annular positioning portion, which extends vertically downward from the inner side of the support portion, and the first positioning portion abuts against the inner side of the second positioning portion.

[0009] Optionally, the second positioning part includes a first inner side and a first outer side, wherein the bottom of the first outer side is inclined toward the first inner side.

[0010] Optionally, the lower end surface of the second positioning part is lower than the lower end surface of the first positioning part.

[0011] Optionally, the outer ring further includes an annular third positioning portion, which extends vertically upward from the outer edge of the support portion; a gap is provided between the third positioning portion and the outer edge of the inner tray along the radial direction of the inner tray; and an annular fourth positioning portion is provided on the cover ring, which is embedded in the gap.

[0012] Optionally, the cover ring may at least cover a portion of the top surface of the third positioning portion.

[0013] Optionally, the non-load-bearing surface includes a convex arc surface extending from the horizontal plane of the load-bearing surface in a direction away from the load-bearing surface.

[0014] Optionally, the non-load-bearing surface may further include an annular vertical surface located at the radial outer end of the arc surface.

[0015] Optionally, the upper surface of the cover ring is a convex arc surface.

[0016] Optionally, the outer diameter of the cover ring is not greater than the outer diameter of the outer ring.

[0017] The present invention also provides a semiconductor device, the semiconductor device comprising:

[0018] chamber;

[0019] As described above, the separate wafer tray is disposed within the cavity;

[0020] A spray head, located within the chamber and positioned opposite to the split wafer tray, is used to deliver reactive gases into the chamber.

[0021] A support bucket, which supports the split wafer tray and drives the split wafer tray to rotate;

[0022] A heater, which is disposed inside the support barrel.

[0023] Optionally, the outer diameter of the outer ring of the split wafer tray is larger than the outer diameter of the support barrel.

[0024] Optionally, the outer diameter of the inner tray of the split wafer tray is smaller than the outer diameter of the support barrel.

[0025] Optionally, the outer diameter of the inner tray of the split wafer tray is smaller than the inner diameter of the support barrel.

[0026] In summary, compared with the prior art, the split wafer tray and semiconductor device provided by the present invention have the following beneficial effects:

[0027] This embodiment of the split wafer tray reduces temperature differences among components during processing by separating the inner tray, outer ring, and cover ring, particularly at different locations on the inner tray. This prevents breakage due to excessive temperature differences at different locations on a single component, extending the lifespan of each component. The cover ring, located on the inner tray, limits the wafer's position during processing. Compared to existing trays, the temperature at the contact point between the cover ring and the wafer is lower, improving the quality of the film deposited on the wafer by reducing the temperature in the radial limiting area. The cover ring, covering the outer ring, prevents reactive gases from depositing on the outer ring, reducing the cleaning frequency of the outer ring. The split design allows for individual replacement of any broken component without replacing the entire tray, improving utilization. Attached Figure Description

[0028] Figure 1 This is a schematic diagram of the structure of a tray in the prior art.

[0029] Figure 2 This is a simulation diagram of the temperature field of a tray in operation in the existing technology.

[0030] Figure 3 This is a schematic diagram of the separate wafer tray of the present invention placed on the support barrel.

[0031] Figure 4 This is a schematic diagram of the inner tray structure of the split wafer tray of the present invention.

[0032] Figure 5 This is a simulation diagram of the temperature field under the working state of the split wafer tray of the present invention.

[0033] Figure 6This is a schematic diagram of the outer ring structure of the split wafer tray of the present invention.

[0034] Figure 7 This is a schematic diagram of the cover ring structure of the split wafer tray of the present invention.

[0035] Figure 8 This is a temperature simulation diagram of the cover ring of the split wafer tray of the present invention under working conditions.

[0036] Figure 9 This is a schematic diagram of the structure of the semiconductor device of the present invention.

[0037] Explanation of reference numerals in the attached figures

[0038] Tray 1; Support bucket 2; Heater 3; Split wafer tray 10; Inner tray 100; Bearing surface 101; Tray body 102; First positioning part 103; Second outer side surface 1031; First abutting surface 104; Non-bearing surface 105; Outer ring 110; First inner side surface 111; Support part 112; First support surface 1121; Second support surface 1122; Second positioning part 113; Third positioning part 114; First outer side surface 115; Cover ring 120; Wafer positioning part 121; Fourth positioning part 122; Outer ring covering part 123; Inner tray covering surface 124; Support bucket 20; Second inner side surface 201; Heater 30; Semiconductor equipment 40; Chamber 410; Spray head 420. Detailed Implementation

[0039] The following will be combined with the appendix in the embodiments of the present invention. Figure 3 ~Attached Figure 9 The technical solutions, structural features, objectives and effects achieved in the embodiments of the present invention will be described in detail.

[0040] It should be noted that the accompanying drawings are in a very simplified form and use non-precise proportions. They are only used to facilitate and clarify the purpose of illustrating the embodiments of the present invention, and are not intended to limit the implementation conditions of the present invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in the proportional relationship, or adjustments to the size should still fall within the scope of the technical content disclosed in the present invention, provided that they do not affect the effects and objectives that the present invention can produce.

[0041] It should be noted that, in this invention, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only the expressly listed elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus.

[0042] It is worth noting that, in this invention, when "abutting" is used to describe the radial positional relationship, it means that when the split crystal tray is in a rotating state, at least a portion of the two "abutting" parts are in contact, and when the split crystal tray is not in a rotating state, the two "abutting" parts may be in a non-contact state; when "abutting" is used to describe the axial positional relationship, it means that regardless of whether the split wafer tray is in a rotating state, at least a portion of the two "abutting" parts are in contact.

[0043] like Figure 3 As shown, the present invention provides a split wafer tray 10, wherein a support barrel 20 for supporting the split wafer tray 10 is provided at the bottom of its outer edge. The split wafer tray 10 includes an inner tray 100, an outer ring 110, and a cover ring 120. Figure 6 As shown, the outer ring 110 includes a horizontally arranged annular support portion 112. The support portion 112 includes a first support surface 1121 and a second support surface 1122 that are parallel to each other. The first support surface 1121 is used to support the inner tray 100 and the cover ring 120, and the second support surface 1122 is used to abut against the upper end surface of the support barrel 20. Continuing as... Figure 3 As shown, the support barrel 20 is cylindrical and annular. The upper surface of the support barrel 20 supports the split wafer tray 10. The support barrel 20 rotates the split wafer tray 10, thereby rotating the wafers it carries. The split wafer tray 10 abuts against the upper surface of the support barrel 20 via the second support surface 1122 of the support portion 112. The outer edge of the inner tray 100 abuts against the first support surface 1121 of the outer ring 110. Along the circumference of the inner tray 100, a cover ring 120 is arranged around the inner tray 100 to radially limit the wafers (not shown) on the inner tray 100. The bottom of the cover ring 120 abuts against the first support surface 1121 of the outer ring 110.

[0044] The specific structure of the inner tray 100 is as follows: Figure 4As shown, the upper surface of the inner tray 100 includes a support surface 101 for supporting the wafer and a non-support surface 105 surrounding the support surface. The support surface 101 is located at the center of the upper surface of the inner tray 100. The non-support surface 105 includes at least a horizontal surface connected to the support surface 101 and an arc-shaped surface radially disposed outside the horizontal surface. The support surface 101 and the non-support surface 105 are transitioned by a horizontal surface, that is, the two at the connection point are on the same horizontal surface.

[0045] The inner tray 100 includes a tray body 102 and a first positioning part 103. The first positioning part 103 is annular. The tray body 102 is generally disc-shaped, and the bearing surface 101 is disposed on the upper surface of the tray body 102. The first positioning part 103 extends vertically downward at the bottom of the tray body 102. The tray body 102 has an annular first abutment surface 104 at its bottom edge, and the first positioning part 103 extends away from the bearing surface 101 from the inner ring of the first abutment surface 104. When the inner tray 100, outer ring 110, and cover ring 120 of the split wafer tray 10 are in an assembled state, the inner tray 100 abuts against the first support surface 1121 of the outer ring 110 through the first abutment surface 104. Optionally, the inner tray 100 and the outer ring 110 are supported by two planes abutting against each other. This planar contact increases the contact area between the inner tray 100 and the outer ring 110, improving the stability of the outer ring 110's support of the inner tray 100. When the outer ring 110 supports the inner tray 100, a first positioning portion 103 on the inner tray 100 abuts against the outer ring 110 along the radial direction of the inner tray 100. A second positioning portion 113 is provided on the outer ring 110, surrounding the first positioning portion 103. The second positioning portion 113 extends vertically downward from the inner side of the support portion 112 of the outer ring 110. The second positioning portion 113 and the first positioning portion 103 abut against each other on their sides, thereby achieving radial positioning of the inner tray 100 by the outer ring 110. Furthermore, the surface contact between the second positioning portion 113 and the first positioning portion 103 ensures accurate positioning of the inner tray 100 by the outer ring 110.

[0046] Continue as Figure 3 As shown, the first positioning part 103 is circular, and the central area surrounding the first positioning part 103 is hollowed out. This design helps to reduce the weight of the inner tray 100 and increases the distance along the height direction between the bottom of the tray body 102 surrounded by the first positioning part 103 and the heater 30, thereby improving the temperature uniformity of the inner tray 100.

[0047] During the rotation of the split wafer tray 10 driven by the support barrel 20, due to the gap between the outer ring 110 and the inner tray 100, the inner tray 100 and the outer ring 110 are eccentrically connected during rotation, resulting in one-sided contact between them. On the relatively separated side, the inner tray 100 is separated from the outer ring 110, reducing heat transfer from the inner tray 100 to the outer ring 110, thus leading to a higher temperature on the relatively separated side of the inner tray 100. Conversely, the inner tray 100 on the side with one-sided contact has a lower temperature due to lower thermal resistance. Therefore, in this embodiment, the first support surface 1121 is lower than the bearing surface 101 in the vertical direction to increase the distance between the wafer and the outer ring 110 in the vertical direction, reducing the temperature unevenness on the wafer caused by heat transfer between the inner tray 100 and the outer ring 110, and reducing the temperature difference at various points on the wafer during processing.

[0048] The non-load-bearing surface 105 may include a convex arcuate surface extending from the horizontal plane of the load-bearing surface 101 toward a direction away from the load-bearing surface 101, and an annular vertical surface located at its radially outer end. For example... Figure 4 As shown, in this embodiment, in the cross-section of the inner tray 100 in the thickness direction, the non-load-bearing surface 105 adopts an outwardly convex arc shape to connect the horizontal surface and the annular vertical surface located at the radially outer end, and the bottom of the annular vertical surface is connected to the first abutment surface 104. In other embodiments, the non-load-bearing surface 105 adopts an outwardly convex arc shape to connect the horizontal surface and the first abutment surface 104, that is, it does not include the annular vertical surface. By setting the non-load-bearing surface 105 to include an outwardly convex arc surface, the contact area between it and the cover ring 120 can be reduced compared to a right-angled surface, thereby increasing the thermal resistance between the two. Under the existing processing technology, the processing accuracy of the arc surface is more difficult to control than that of the right-angled surface. Due to the limitation of processing accuracy, when the arc-shaped non-load-bearing surface 105 and the cover ring 120 are opposite each other, there will inevitably be a contact gap caused by processing accuracy, thereby reducing the heat conduction between the inner tray 100 and the cover ring 120, reducing the heat loss at the non-load-bearing surface 105, and improving the heat insulation performance of the cover ring 120 at the non-load-bearing surface 105. Furthermore, the curved non-load-bearing surface 105 structure can reduce the possibility of stress concentration on the inner tray 100 compared to the right-angle structure, thus extending the service life of the inner tray 100.

[0049] In this embodiment, continue as follows Figure 3 As shown, the outer diameter of the inner tray 100 is smaller than the outer diameter of the support barrel 20. As a preferred option, the outer diameter of the inner tray 100 is smaller than the inner diameter of the support barrel 20. During the heating process of the wafer on the split wafer tray 10, the heater 30, used to generate heat, is located inside the support barrel 20. The heat generated by the heater 30 is transferred to the wafer through the inner tray 100; that is, the heater 30 first heats the inner tray 100, and the heat is transferred to the wafer through the inner tray 100. Figure 5As shown, the highest temperature point (1069°C) on the inner tray 100 occurs at the position closest to the heater 30 on the first positioning part 103, and the lowest temperature point (1041°C) is located on the outermost radial side of the inner tray 100. That is, the maximum temperature difference on the inner tray 100 is 28°C, which is much lower than... Figure 2 The maximum temperature difference in the prior art shown is 89°C. Because the outer diameter of the inner tray 100 is smaller than the inner diameter of the support barrel 20, the lowest temperature point of the inner tray 100 can be brought as close as possible to the heater 30, thereby increasing the temperature at the lowest temperature point of the inner tray 100, reducing the temperature difference at different locations on the inner tray 100, and reducing the risk of the inner tray 100 breaking due to excessive temperature differences at different locations.

[0050] like Figure 3 and Figure 6 As shown, the split wafer tray 10 of this embodiment also includes an outer ring 110 surrounding the inner tray 100. The outer ring 110 includes not only a support portion 112 and a second positioning portion 113, but also a third positioning portion 114. As mentioned above, the annular support portion 112 is horizontally arranged, and the support portion 112 includes a first support surface 1121 for supporting the inner tray 100 and the cover ring 120 and a second support surface 1122 for abutting against the support barrel 20. The upper end surface of the support barrel 20 supports the second support surface 1122 of the outer ring 110 to achieve vertical support of the support barrel 20 for the outer ring 110. Preferably, the first support surface 1121 and the second support surface 1122 are arranged parallel to each other. When the outer ring 110 is used to support the inner tray 100, both the first support surface 1121 and the second support surface 1122 are in a horizontal state, ensuring stable and reliable horizontal support for the inner tray 100 and preventing the inner tray 100 from tilting.

[0051] The second positioning part 113 and the third positioning part 114 are located at the inner edge and outer edge of the annular support part 112, respectively. The second positioning part 113 extends downward vertically from the inner edge of the support part 112, and the third positioning part 114 extends upward vertically from the outer edge of the support part 112. When the inner tray 100, outer ring 110, and cover ring 120 of the split wafer tray 10 are in the combined state, the second positioning part 113 is located between the second outer side surface 1031 of the first positioning part 103 and the second inner side surface 201 of the support barrel 20. The second inner side surface 201 of the support barrel 20 and the first outer side surface 115 of the second positioning part 113 of the outer ring 110 can achieve radial positioning of the support barrel 20 on the outer ring 110. The first inner side 111 of the second positioning part 113 and the second outer side 1031 of the first positioning part 103 on the inner tray 100 can achieve radial positioning of the inner tray 100, thereby achieving radial positioning of the support barrel 20, the outer ring 110 and the inner tray 100, so that the support barrel 20, the outer ring 110 and the inner tray 100 are basically in a concentric position.

[0052] like Figure 3 As shown, preferably, the outer diameter of the outer ring 110 is larger than the outer diameter of the support barrel 20. When the split wafer tray 10 is placed on the support barrel 20, to facilitate the automatic transfer device to lift the split wafer tray 10 from bottom to top from the outer wall side of the support barrel 20, the outer diameter of the outer ring 110 of the split wafer tray 10 can be set to be larger than the outer diameter of the support barrel 20, thereby realizing that the automatic transfer device lifts the split wafer tray 10 from the outer wall side of the support barrel 20 by lifting the outer ring 110. In other embodiments, the outer diameter of the outer ring 110 can also be set to be no larger than the outer diameter of the support barrel 20, and the wafer can be picked up and placed by using a lifting rod set inside the support barrel 20 to lift the wafer.

[0053] Furthermore, the lower end face of the second positioning part 113 is lower than the lower end face of the first positioning part 103. Because the second positioning part 113 is lower than the first positioning part 103, the first positioning part 103 will not completely block the second positioning part 113 from receiving heat radiation from the heater 30, meaning the second positioning part 113 is at a higher temperature. For the inner tray 100, especially for the outermost radial region of the inner tray 100, the second positioning part 113 can act as a heat source to increase the temperature of that region. In addition, the inner tray 100 is also covered with a cover ring 120, which reduces heat loss from the outer region of the inner tray 100, providing insulation and reducing the temperature difference on the inner tray 100, thus reducing the risk of the inner tray 100 cracking due to excessive temperature differences at different locations. Furthermore, the cover ring 120 covers the outer side of the outer ring 110, reducing outward heat dissipation from the outer ring 110, providing insulation and reducing the overall temperature difference of the outer ring 110, further reducing the risk of the outer ring 110 cracking due to excessive temperature differences at different locations.

[0054] like Figure 6 As shown, the bottom of the first outer side 115 of the second positioning part 113 is inclined toward the first inner side 111. With this configuration, when the outer ring 110 is inserted into the support barrel 20 from top to bottom, the first outer side 115, which is inclined toward the first inner side 111, reduces the bottom width of the second positioning part 113, which facilitates the guiding and positioning installation between the second positioning part 113 and the support barrel 20, and realizes the positioning installation between the outer ring 110 and the support barrel 20.

[0055] like Figure 3 and Figure 7As shown, the split wafer tray 10 of this embodiment also includes an annular cover ring 120. The cover ring 120 includes a wafer positioning portion 121, a fourth positioning portion 122, and an outer ring covering portion 123, as well as an inner tray covering surface 124 disposed between the wafer positioning portion 121 and the fourth positioning portion 122. The cover ring 120 surrounds the bearing surface 101 on the inner tray 100, and the cover ring 120 at least covers a portion of the top surface of the outer ring 110. Preferably, the outer diameter of the cover ring 120 is not greater than the outer diameter of the outer ring 110 to avoid interference between the automatic transfer device and the cover ring 120 when the split wafer tray 10 is transferred through the outer ring 110. The upper surface of the cover ring 120 is a convex arc surface structure. Compared to setting the upper surface of the cover ring 120 as a right angle structure, the arc surface structure of the cover ring 120 can reduce the heat transfer area between the cover ring 120 and the outside environment, reduce the heat loss of the cover ring 120, and reduce the temperature difference at different positions on the cover ring 120. In addition, the arc-shaped cover ring 120 can avoid stress concentration and extend the service life of the cover ring 120; and the arc-shaped cover ring 120 can guide the airflow over the upper surface of the cover ring 120, reduce the obstruction of the cover ring 120 on the airflow path, and improve the stability of the airflow inside the reaction chamber.

[0056] During wafer carrying, the inner tray 100 supports the wafer via its bearing surface 101. The wafer positioning portion 121 on the cover ring 120 radially positions the wafer to ensure it does not move on the inner tray 100 during processing as the separate wafer tray 10 rotates. The inventors discovered in the film deposition process that lowering the temperature of the wafer's radially limiting region can improve the quality of the film deposited on the wafer. Because the cover ring 120 and the inner tray 100 are separate structures, the thermal resistance between them causes the temperature of the wafer positioning portion 121 to be lower than the temperature of the inner tray 100 at the contact point with the wafer positioning portion 121. This lower temperature at the wafer positioning portion 121 is beneficial for improving the film deposition quality during wafer processing. Figure 8 As shown, the temperature at the contact point between the cover ring 120 and the wafer in this invention is 927°C, which is lower than the temperature of 1042°C at the contact point between the existing tray and the wafer, thus effectively improving the quality of the film deposited on the wafer.

[0057] The upper surface of the third positioning portion 114 of the outer ring 110 abuts against the lower surface of the outer ring covering portion 123 of the cover ring 120. A gap is provided between the third positioning portion 114 and the outer edge of the inner tray 100 along the radial direction of the inner tray 100; the cover ring 120 is provided with an annular fourth positioning portion 122, which is embedded in this gap. The fourth positioning portion 122 on the cover ring 120 is located between the third positioning portion 114 on the outer ring 110 and the outer edge of the inner tray 100, thereby achieving radial positioning of the cover ring 120 and preventing the cover ring 120 from separating from the outer ring 110 and the inner tray 100 due to lack of radial positioning when the support barrel 20 drives the split wafer tray 10 to rotate.

[0058] During wafer fabrication, process gases flow from top to bottom onto the wafer and epitaxially form a film on it. A cap ring 120 covers the outer ring 110, reducing deposition on the outer ring 110 and decreasing the cleaning frequency. Furthermore, the cap ring 120 covers the edge of the outer ring 110, providing insulation to the edge and reducing temperature differences at different locations on the outer ring 110. This reduces the risk of breakage and extends the lifespan of the outer ring 110.

[0059] The split wafer tray 10 of this embodiment reduces the temperature difference between various components during the process by separately configuring the inner tray 100, outer ring 110, and cover ring 120, especially reducing the temperature difference at different locations on the inner tray 100. This avoids cracking due to excessive temperature differences at different locations on a single component, extending the service life of each component. The cover ring 120 covers the inner tray 100 and limits the wafer during processing. Compared to existing trays, the temperature at the contact point between the cover ring 120 and the wafer is lower. By reducing the temperature in the radial limiting area of ​​the wafer, the quality of the film deposited on the wafer can be improved. The cover ring 120 covers the outer ring 110, preventing reactive gases from depositing on the outer ring 110 and reducing the cleaning frequency of the outer ring 110. The split design allows for individual replacement of any broken component without replacing the entire tray, improving utilization.

[0060] like Figure 9As shown, the present invention also provides a semiconductor device 40, which includes a chamber 410, a split wafer tray 10 as described above, a spray head 420, a support tank 20, and a heater 30. The split wafer tray 10 is disposed within the chamber 410. The spray head 420 is located within the chamber 410 and is disposed opposite to the split wafer tray 10, for delivering reaction gas into the chamber. The support tank 20 is used to support the split wafer tray 10 and drive the split wafer tray 10 to rotate. The heater 30 is disposed within the support tank 20, for heating the wafer carried on the split wafer tray 10, so that the reaction gas can react smoothly with the wafer. The chamber wall of the chamber 410 is provided with a coolant channel for cooling the chamber wall and preventing the outer surface temperature of the chamber wall from becoming too high.

[0061] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A split-type wafer tray, characterized in that, The split-type wafer tray includes: The inner tray has an upper surface including a support surface for supporting wafers and a non-support surface surrounding the support surface, with a horizontal transition between the support surface and the non-support surface; An outer ring is provided along the circumference of the inner tray. The outer ring includes an annular support portion, the support portion including a first support surface, and the inner tray is supported on the first support surface. A cover ring is disposed around the bearing surface on the inner tray, the cover ring at least partially covering the non-bearing surface to limit the wafers carried on the bearing surface, and the cover ring at least partially covering the top surface non-bearing surface of the outer ring.

2. The split wafer tray as described in claim 1, characterized in that, The outer edge of the inner tray and the bottom of the cover ring abut against the first support surface of the outer ring.

3. The split wafer tray as described in claim 2, characterized in that, The inner tray includes a tray body and a first positioning part. The first positioning part is located at the bottom of the tray body and inside the outer edge of the inner tray. The first positioning part extends from the bottom of the tray body in a direction away from the bearing surface. Along the radial direction of the inner tray, the first positioning part abuts against the outer ring.

4. The split wafer tray as described in claim 3, characterized in that, The outer ring also includes a ring-shaped second positioning part, which extends vertically downward from the inner side of the support part, and the first positioning part abuts against the inner side of the second positioning part.

5. The split wafer tray as described in claim 4, characterized in that, The second positioning part includes a first inner side and a first outer side, and the bottom of the first outer side is inclined toward the first inner side.

6. The split wafer tray as described in claim 4, characterized in that, The lower end surface of the second positioning part is lower than the lower end surface of the first positioning part.

7. The split wafer tray as described in claim 4, characterized in that, The outer ring also includes an annular third positioning part, which extends vertically upward from the outer edge of the support part; a gap is provided between the third positioning part and the outer edge of the inner tray along the radial direction of the inner tray; an annular fourth positioning part is provided on the cover ring, which is embedded in the gap.

8. The split wafer tray as described in claim 7, characterized in that, The cover ring at least covers a portion of the top surface of the third positioning part.

9. The split wafer tray as described in claim 1, characterized in that, The non-load-bearing surface includes an outwardly convex arc surface extending from the horizontal plane of the load-bearing surface in a direction away from the load-bearing surface.

10. The split wafer tray as described in claim 9, characterized in that, The non-load-bearing surface also includes an annular vertical surface located at the radial outer end of the arc surface.

11. The split wafer tray as described in claim 1, characterized in that, The upper surface of the cover ring is a convex arc surface.

12. The split wafer tray as described in claim 1, characterized in that, The outer diameter of the cover ring is not greater than the outer diameter of the outer ring.

13. A semiconductor device, characterized in that, The semiconductor device includes: chamber; The split wafer tray as described in any one of claims 1-12, wherein the split wafer tray is disposed within the cavity; A spray head, located within the chamber and positioned opposite to the split wafer tray, is used to deliver reactive gases into the chamber. A support bucket, which supports the split wafer tray and drives the split wafer tray to rotate; A heater, which is disposed inside the support barrel.

14. The semiconductor device as claimed in claim 13, characterized in that, The outer diameter of the outer ring of the split wafer tray is larger than the outer diameter of the support barrel.

15. The semiconductor device as described in claim 13, characterized in that, The outer diameter of the inner tray of the split wafer tray is smaller than the outer diameter of the support barrel.

16. The semiconductor device as described in claim 15, characterized in that, The outer diameter of the inner tray of the split wafer tray is smaller than the inner diameter of the support barrel.

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