Wafer inspection apparatus and inspection device

Abstract

The present disclosure provides a wafer detection device and a detection apparatus. The wafer detection device comprises a bearing body, at least one heating unit and a detection portion. The bearing body comprises a bearing portion for bearing a wafer to be detected, wherein the bearing portion comprises a central region in contact with the wafer to be detected and a peripheral region surrounding the central region. The at least one heating unit is arranged on the bearing body for heating the bearing portion. The detection portion is movably arranged above the bearing portion in a relative movable manner, so as to reach a detection position corresponding to any detection region on the wafer to be detected. The peripheral region is arranged such that the horizontal orthographic projection pattern of the detection portion in any detection position is located within the bearing portion. The detection apparatus comprises the wafer detection device. In the present disclosure, part of the test probes on the detection portion abut the wafer to be detected and are heated by the heated wafer to be detected, while the other part of the test probes obtains heat by being close to the bearing portion, so as to avoid deformation due to temperature reduction.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor technology, and in particular to a wafer inspection apparatus and inspection equipment. Background Technology

[0002] In the field of semiconductor reliability verification, high-temperature testing of memory devices is facing unprecedented technical challenges. With the widespread adoption of intelligent driving systems and industrial IoT devices, memory chips need to complete full-function testing in high-temperature environments. This places higher demands on the thermal management capabilities of the testing system, requiring the maintenance of temperature uniformity among multiple test probes in the probe card above the wafer to prevent deformation or poor contact of some probes. However, in related technologies, the chuck is size-matched to the wafer under test. This causes some test probes to be suspended in mid-air as they move from the center of the wafer towards the edge to detect microchips at the edge, preventing them from absorbing heat from the chuck or the wafer. Consequently, these probes shrink due to heat loss, affecting the accuracy of subsequent test results. Summary of the Invention

[0003] In view of the shortcomings of the prior art described above, the purpose of this disclosure is to provide a wafer inspection device and inspection equipment to solve the problems in the related art.

[0004] The first aspect of this disclosure provides a wafer inspection apparatus, comprising:

[0005] A carrier body includes a carrier portion for supporting a wafer under test; the carrier portion includes a central region in contact with the wafer under test and a peripheral region surrounding the central region; the carrier body includes a carrier member and a plurality of auxiliary support members arranged in a target shape around the carrier member, and the plurality of auxiliary support members can be raised and lowered; wherein at least one of the plurality of auxiliary support members is selectively raised to form the peripheral region, while the remaining auxiliary support members together with the carrier member form the central region; the inner diameter of the auxiliary support member is adapted to the outer diameter of the carrier member;

[0006] At least one heating unit is disposed on the support body for heating the support portion;

[0007] The detection unit is disposed above the carrier body in a relatively movable manner, so as to be able to reach the detection position of any test area on the wafer to be tested;

[0008] The peripheral area is configured such that the horizontal orthographic projection pattern of the detection unit at any of the detection positions is located within the bearing portion.

[0009] In an embodiment of the first aspect, the temperature of the peripheral region is higher than the temperature of the central region.

[0010] In an embodiment of the first aspect, the at least one heating unit is configured to raise the heating temperature of the peripheral region to be higher than that of the central region.

[0011] In an embodiment of the first aspect, the support portion is configured such that both the central region and the peripheral region abut against the detection portion.

[0012] In an embodiment of the first aspect, the central region is configured as a mating groove formed by recessing from the top wall of the support portion for embedding the wafer to be tested, so that the top wall of the support portion can be flush with the top wall of the wafer to be tested embedded in the mating groove.

[0013] In an embodiment of the first aspect, the heating unit is implemented as a plurality of heating units; a third heating unit is correspondingly disposed in the central region, and a fourth heating unit is correspondingly disposed in the peripheral region.

[0014] In an embodiment of the first aspect, the detection unit includes a plurality of test probes arranged in an array, the plurality of test probes being vertically telescopically oriented.

[0015] A second aspect of this disclosure provides a testing apparatus, including the aforementioned wafer testing device.

[0016] As described above, this disclosure provides a wafer inspection apparatus and inspection device. The wafer inspection apparatus includes a carrier body, at least one heating unit, and a detection unit. The carrier body includes a carrier portion for carrying a wafer to be inspected; the carrier portion includes a central region in contact with the wafer to be inspected, and a peripheral region surrounding the central region; the carrier body includes a carrier member and a plurality of auxiliary support members arranged in a target shape around the carrier member, and the plurality of auxiliary support members are all vertically and vertically arranged; wherein, at least one of the plurality of auxiliary support members is selectively moved upward to form the peripheral region, while the remaining auxiliary support members together with the carrier member form the central region; the inner diameter of the auxiliary support member is adapted to the outer diameter of the carrier member. The at least one heating unit is disposed on the carrier body for heating the carrier portion. The detection unit is disposed above the carrier portion and is relatively movable to the carrier body so as to reach the detection position of any area to be inspected on the wafer to be inspected. The peripheral region is configured such that the horizontal orthographic projection pattern of the detection unit at any detection position is located within the carrier portion. The detection equipment includes the wafer detection device. The peripheral region of this disclosure allows a portion of the test probes on the detection section to contact the wafer under test and be heated by the heated wafer; while another portion of the test probes receives heat from the support section, thereby preventing deformation due to temperature drop. It can also support wafers of various diameters and heat and maintain the temperature of probes suspended outside the wafer to improve the accuracy of wafer detection. Attached Figure Description

[0017] Figure 1 The image shown is a cross-sectional schematic diagram of a wafer inspection apparatus according to an embodiment of this disclosure.

[0018] Figure 2 The image shown is a top view schematic diagram of a wafer inspection apparatus according to an embodiment of the present disclosure.

[0019] Figure 3 The diagram shown is a cross-sectional view of the carrier body in another embodiment of this disclosure.

[0020] Figure 4 The diagram shown is a cross-sectional view of the first state of the carrier body in another embodiment of this disclosure.

[0021] Figure 5 The diagram shown is a cross-sectional view of the second state of the carrier body in another embodiment of this disclosure.

[0022] Figure label:

[0023] 110. Support body; 111. Support section; 1111. Central area; 1112. Peripheral area; 112. Support component; 113. Auxiliary support component; 120. Heating unit; 121. First heating unit; 122. Second heating unit; 123. Third heating unit; 124. Fourth heating unit; 130. Detection section; 131. Test probe; 200. Wafer to be tested. Detailed Implementation

[0024] The following specific examples illustrate the implementation of this disclosure. Those skilled in the art can easily understand other advantages and effects of this disclosure from the information disclosed herein. This disclosure can also be implemented or applied through other different specific embodiments, and various details in this disclosure can be modified or changed according to different viewpoints and application modules without departing from the spirit of this disclosure. It should be noted that, unless otherwise specified, the embodiments and features in the embodiments of this disclosure can be combined with each other.

[0025] The embodiments of this disclosure will now be described in detail with reference to the accompanying drawings, so that those skilled in the art to which this disclosure pertains can readily implement it. This disclosure may be embodied in many different forms and is not limited to the embodiments described herein.

[0026] In this disclosure, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic represented in connection with that embodiment or example is included in at least one embodiment or example of this disclosure. Furthermore, the specific features, structures, materials, or characteristics represented may be combined in any suitable manner in any one or a group of embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples represented in this disclosure, as well as the features of those different embodiments or examples.

[0027] Furthermore, the terms "first" and "second" are used for illustrative purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the representation of this disclosure, "a set" means two or more, unless otherwise explicitly specified.

[0028] For the purpose of clarity, devices unrelated to the description are omitted, and the same or similar components throughout the specification are given the same reference numerals.

[0029] Throughout this specification, when it is said that a device is "connected" to another device, this includes not only "direct connection" but also "indirect connection" by placing other components in between. Furthermore, when it is said that a device "comprises" a certain constituent element, unless otherwise stated otherwise, this does not exclude other constituent elements, but rather implies that other constituent elements may be included.

[0030] While the terms first, second, etc., are used in some examples herein to refer to various elements, these elements should not be limited by these terms. These terms are used only to distinguish one element from another. For example, first interface and second interface, etc., are used. Furthermore, as used herein, the singular forms “a,” “an,” and “the” are intended to also include the plural forms unless the context indicates otherwise. It should be further understood that the terms “comprising,” “including,” indicate the presence of the stated feature, step, operation, element, module, item, kind, and / or group, but do not exclude the presence, occurrence, or addition of one or more other features, steps, operations, elements, modules, items, kinds, and / or groups. The terms “or” and “and / or” as used herein are interpreted as inclusive, or mean any one or any combination thereof. Thus, “A, B, or C” or “A, B, and / or C” means “any one of: A; B; C; A and B; A and C; B and C; A, B, and C.” Exceptions to this definition will only occur if the combination of elements, functions, steps, or operations is inherently mutually exclusive in some way.

[0031] The technical terms used herein are for reference only to specific embodiments and are not intended to limit the scope of this disclosure. The singular form used herein includes the plural form unless the statement explicitly indicates otherwise. The word "comprising" as used in this specification means to specify a particular characteristic, region, integer, step, operation, element, and / or component, and does not exclude the presence or addition of other characteristics, regions, integers, steps, operations, elements, and / or components.

[0032] Although not explicitly defined, all terms, including technical and scientific terms used herein, shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Terms defined in commonly used dictionaries shall be further interpreted as having a meaning consistent with the relevant technical literature and the message of the present disclosure, and shall not be over-interpreted as having an ideal or overly formulaic meaning unless otherwise defined.

[0033] In the field of semiconductor reliability verification, high-temperature testing of memory devices is facing unprecedented technical challenges. With the widespread adoption of intelligent driving systems and industrial IoT devices, memory chips need to complete full-function testing in high-temperature environments. This places higher demands on the thermal management capabilities of the testing system, requiring the maintenance of temperature uniformity among multiple test probes in the probe card above the wafer to prevent deformation or poor contact of some probes. However, in related technologies, the chuck is size-matched to the wafer under test. This causes some test probes to be suspended in mid-air as they move from the center of the wafer towards the edge to detect microchips at the edge, preventing them from absorbing heat from the chuck or the wafer. Consequently, these probes shrink due to heat loss, affecting the accuracy of subsequent test results.

[0034] Based on the above problems, the peripheral area in this disclosure allows a portion of the test probes on the detection unit to contact the wafer under test and be heated by the heated wafer under test; while another portion of the test probes obtains heat from the carrier unit, thereby avoiding deformation due to temperature drop.

[0035] Figure 1 The image shown is a cross-sectional schematic diagram of a wafer inspection apparatus according to an embodiment of this disclosure. Figure 2 The image shown is a top view schematic diagram of a wafer inspection apparatus according to an embodiment of this disclosure. Figure 1 and Figure 2 In the example, the wafer inspection device includes a carrier body 110, at least one heating unit 120, and an inspection unit 130. Those skilled in the art will understand that the wafer inspection device is housed within a wafer probing machine, which also contains other components that cooperate with the wafer inspection device but are not shown, such as a microscope system, a probe card cleaner, a wafer transfer system, and a data analysis system.

[0036] Exemplarily, both the carrier body 110 and the detection unit 130 are disposed inside a wafer testing prober (not shown in the figure), and the detection unit 130 is disposed above the carrier body 110 in a relatively movable cooperation manner, so as to reach the detection position of any test area on the wafer 200 to be tested. In this embodiment, the carrier body 110 is movably disposed, while the detection unit 130 is fixedly disposed. It can be understood that the carrier body 110 is moved by a mechanical structure (such as an XYZ three-axis positioning system), for example, the X-axis is responsible for the horizontal movement of the wafer 200 to be tested, and the Y-axis is used for line crossing during the testing process. This enables the detection unit 130 to move point by point above the wafer 200 to be tested. The Z-axis controls the height of the carrier body 110, thereby regulating the contact and separation of the test probe 131 with the wafer 200 to be tested.

[0037] Each movement causes the test probe 131 to contact each microchip on the wafer 200 under test. Figure 2 (The dashed squares in the example are only a schematic diagram of the microchip.) Alignment of the pads is important. It is crucial to maintain the probe's perpendicularity to the surface of the wafer 200 during movement to avoid poor contact or damage to the wafer 200 due to tilting.

[0038] In other embodiments, the relative movement of the support body 110 and the detection unit 130 is implemented such that the support body 110 is fixedly arranged while the detection unit 130 is movably arranged, but this is not a limitation.

[0039] For example, the detection unit 130 includes a plurality of test probes 131 arranged in an array. For example, in... Figure 2 In the example, the multiple test probes 131 are arranged in a rectangular array. Figure 2 (The middle circle is only a schematic diagram of the test probe 131.) In other embodiments, the plurality of test probes 131 are implemented in a linear array, but this is not a limitation.

[0040] For example, the carrier body 110 includes a carrier portion 111 for carrying the wafer 200 under test. The carrier portion 111 is movably disposed inside the wafer test prober so that the detection portion 130 can be relatively moved to any detection position corresponding to the wafer 200 under test.

[0041] Exemplarily, the carrier portion 111 includes a central region 1111 and a peripheral region 1112 surrounding the central region 1111. The central region 1111 is used to place the wafer under test 200 and can be fitted to the wafer under test 200 for heating. Exemplarily, at least one heating unit 120 is disposed within the carrier body 110 to heat the carrier portion 111, thereby enabling the carrier portion 111 to heat the wafer under test 200 placed on its surface. For example, the heating unit 120 is implemented as a heating plate or heating wire uniformly distributed within the carrier body 110.

[0042] For example, the circumference of the peripheral region 1112 is greater than the diagonal length of the plurality of test probes 131 arranged in a rectangular array. In this way, even when the detection unit 130 moves to a position where only one of the test probes 131 is aligned with the microchip on the wafer under test 200, the horizontal orthographic projection pattern of the detection unit 130 remains within the carrier portion 111.

[0043] For example, the central region 1111 is implemented as a circle, and the outer region 1112 is implemented as an annular shape. For instance, the diameter of the wafer 200 under test is 300 mm, and the diameter of the support portion 111 is 450 mm, meaning the annular width of the outer region 1112 is 150 mm. It is understood that the above data is for illustrative purposes only, and the actual dimensions may be adjusted as needed.

[0044] For example, the detection unit 130 can perform a contact test or a spaced test on the wafer 200 under test. Therefore, the detection unit 130 can obtain heat from the wafer 200 under test on the carrier 111 through heat conduction or heat radiation. In this embodiment, the detection unit 130 can perform a contact test on the wafer 200 under test. Therefore, the detection unit 130 can obtain heat from the wafer 200 under test on the carrier 111 through heat conduction.

[0045] For example, the peripheral region 1112 is configured such that the horizontal orthographic projection pattern of the detection unit 130 at any of the detection positions is located within the support portion 111. That is, the plurality of test probes 131 on the detection unit 130 can all be close to the support portion 111 heated by the heating unit 120, thereby maintaining their own heat and preventing some test probes 131 from cooling down due to suspension and deforming, which could lead to inaccurate subsequent detection. Therefore, when the detection unit 130 is in such a position... Figure 2In the example, when detecting the peripheral region 1112 of the wafer under test 200, part of the test probe 131 on the detection part 130 abuts against the wafer under test 200 located in the central region 1111 and is heated by the heated wafer under test 200; while the other part of the test probe 131 obtains heat from the peripheral region 1112 of the support part 111 by thermal radiation, thereby avoiding the deformation of the test probe 131 due to temperature drop.

[0046] Exemplarily, the at least one heating unit 120 is configured to make the temperature of the peripheral region 1112 higher than the temperature of the central region 1111. Those skilled in the art will understand that, in Figure 1 In the example, since the top walls of the central region 1111 and the peripheral region 1112 are flush, when the test probe 131 abuts against the wafer 200 under test in the central region 1111, a portion of the test probe 131 is suspended above the peripheral region 1112 on the detection unit 130. This results in different deformations due to the different heat received by the suspended portion of the test probe 131 and the portion of the test probe 131 abutting against the wafer 200 under test, thus affecting the accuracy of subsequent detection. Therefore, setting the temperature of the peripheral region 1112 to be higher than that of the central region 1111 can provide heat compensation for the test probes 131 that are not in contact with the wafer 200 under test, thereby reducing the deformation difference caused by the temperature loss of multiple test probes 131.

[0047] An implementation method to ensure that the temperature of the peripheral region 1112 is higher than the temperature of the central region 1111 can be as follows: Multiple heating units 120 are implemented. A first heating unit 121 of the multiple heating units 120 is disposed on the support portion 111 corresponding to the central region 1111, and a second heating unit 122 of the multiple heating units 120 is disposed on the support portion 111 corresponding to the peripheral region 1112. For example, the first heating unit 121 is implemented as a circular heating element, and the second heating unit 122 is implemented as an annular heating element. In this way, the temperature of the peripheral region 1112 can be higher than the temperature of the central region 1111 by controlling the temperatures of the first heating unit 121 and the second heating unit 122 respectively.

[0048] In other embodiments, the implementation of having a higher temperature in the peripheral region 1112 than in the central region 1111 can also be achieved by having multiple heating units 120. A first heating unit 121 of the multiple heating units 120 is disposed on the support portion 111 corresponding to both the central region 1111 and the peripheral region 1112, for example, as a heating channel. A second heating unit 122 of the multiple heating units 120 is disposed on the support portion 111 corresponding to the peripheral region 1112, for example, as an annular heating element, but is not limited thereto.

[0049] For example, the support portion 111 is configured such that both the central region 1111 and the peripheral region 1112 abut against the detection portion 130. Figure 3 The image shown is a cross-sectional schematic diagram of the carrier body according to another embodiment of this disclosure. Figure 3 For the purposes of this illustration, in Figure 3 In the example, the central region 1111 is configured as a recessed groove formed from the top wall of the support portion 111, for embedding the wafer 200 to be tested, so that the top wall of the support portion 111 is flush with the top wall of the wafer 200 to be tested embedded in the recessed groove. In this way, when the detection unit 130 moves to the point where some of the test probes 131 abut against the wafer 200 to be tested, the remaining test probes 131 directly abut against the peripheral region 1112 of the support portion 111. This ensures that all the test probes 131 receive the same amount of heat from the support portion 111, resulting in consistent deformation of the multiple test probes 131 due to temperature, thereby reducing the impact on subsequent detection and improving accuracy.

[0050] It is important to note that, in Figure 3 In this example, the temperature of the peripheral region 1112 is the same as the temperature of the central region 1111. Therefore, the heating unit 120 can be implemented as a heating plate or heating wire whose heating area covers the support portion 111, without the need for additional heating units 120, thereby reducing manufacturing and testing costs.

[0051] It will be understood by those skilled in the art that, Figure 3 In the example, it can also be understood that the top wall of the outer region 1112 is higher than the top wall of the central region 1111. Therefore, it can also be understood that... Figure 1 Based on the example, a layer corresponding to the peripheral region 1112 is provided on the support portion 111. It should be noted that the hardness of the layer is not higher than the hardness of the wafer under test 200 to avoid deformation at the tip of the test probe 131. Preferably, the layer is made of the same material as the wafer under test 200, such as silicon wafer, to ensure the consistency of deformation of the multiple test probes 131.

[0052] exist Figure 3 In this example, since the wafer under test 200 is embedded in the bonding groove, and the top wall of the wafer under test 200 is flush with the top wall of the support portion 111, when the detection portion 130 moves away from the wafer under test 200, the wafer under test 200 can be picked up and put down by a robotic arm in conjunction with a silicone suction cup. This allows the wafer under test 200 located in the bonding groove to be removed while avoiding damage to it.

[0053] Figure 4 The diagram shown is a cross-sectional view of the first state of the carrier body in another embodiment of this disclosure. Figure 5 The image shown is a cross-sectional schematic diagram of the second state of the carrier body in another embodiment of this disclosure. Figure 4 and Figure 5 To illustrate another embodiment, in Figure 4 and Figure 5 In the example, the supporting body 110 includes a supporting member 112 forming the central region 1111 and at least one auxiliary support member 113 forming the peripheral region 1112.

[0054] For example, the carrier 112 is circular, and the auxiliary support 113 is annular, concentric with and surrounding the carrier 112, with the inner diameter of the auxiliary support 113 matching the outer diameter of the carrier 112 to reduce the gap between the carrier 112 and the auxiliary support 113. The dimensions of the carrier 112 are adapted to the dimensions of the wafer 200 to be tested.

[0055] For example, the auxiliary support 113 is vertically detachable so that it can be moved to be flush with the wafer 200 under test when the wafer 200 under test is placed in the central region 1111.

[0056] For example, the bottom wall of the auxiliary support 113 is provided with at least one telescopic member, such as an electric cylinder. The telescopic movement of the auxiliary support 113 moves it to a position where its top wall is flush with the wafer 200 to be tested. Preferably, since the auxiliary support 113 is annular, multiple telescopic members are provided, and these multiple auxiliary support members 113 are arranged at circumferential intervals to improve the stability of the auxiliary support 113 during movement and support, and to avoid inaccurate test results due to tilting of the auxiliary support 113 during testing.

[0057] exist Figure 4In the example, the temperature of the central region 1111 is the same as the temperature of the peripheral region 1112. Multiple heating units 120 are implemented, with a third heating unit 123 corresponding to the central region 1111 and disposed on the support member 112, and a fourth heating unit 124 corresponding to the peripheral region 1112 and disposed on the auxiliary support member 113. Correspondingly, the third heating unit 123 is implemented as a circular heating element, while the fourth heating unit 124 is implemented as an annular heating element. In other embodiments, the third heating unit 123 and the fourth heating unit 124 may also be implemented as heating wires or heating channels, and are not limited thereto.

[0058] Understandably, when in Figure 4 In the first state shown, the auxiliary support 113 is flush with the top wall of the carrier 112 to facilitate the placement of the wafer 200 to be tested. After the wafer 200 to be tested is placed on the carrier 112, the auxiliary support 113 moves upward until its top wall is flush with the top wall of the wafer 200 to be tested. Figure 5 In the second state shown, when the detection unit 130 performs detection, some of the test probes 131 abut against the wafer 200 to be tested, while others abut against the auxiliary support 113. This ensures that the heat received by the multiple test probes 131 from the support 111 is equal, resulting in consistent deformation of the multiple test probes 131 due to temperature influence, thereby reducing the impact on subsequent detection and improving accuracy. After detection, the auxiliary support 113 first moves down to be flush with the top wall of the support 112 to expose the wafer 200 to be tested, facilitating the placement and removal of the wafer 200. The above process is repeated when the wafer 200 to be tested is replaced.

[0059] Understandably, in Figure 4 and Figure 5 In the example, a robotic arm combined with a silicone suction cup can also be used to pick up and place the wafer 200 under test. In this way, the wafer 200 under test placed on the carrier 112 can be removed without damaging the wafer 200 under test.

[0060] In some embodiments, a machine learning model can be constructed, and the detected temperatures T1 of the support member, T2 of the auxiliary support member, T3 of the test probes in contact with the support member, and T4 of the test probes suspended outside the support member can be input as training data into the machine learning model to train the machine learning model as a spacing prediction model. This machine learning model targets a heating platform system composed of a support member (temperature T1) and an auxiliary support member (temperature T2). It collects the contact test probe temperature T3 (as an anchor value) and the suspended test probe temperature T4 corresponding to different spacings L under multiple sets of T1 and T2 (variable) conditions. Using T3 as a benchmark, it selects the equilibrium spacing L that makes T4 equal to T3 as a label, and trains a regression model (using neural networks, Gaussian processes, etc.) with T1 and T2 as input and the equilibrium spacing L as output. This enables rapid prediction of the optimal spacing between the auxiliary support member and the test probes under the combined temperatures of the support member and the auxiliary support member, ensuring that the temperatures of the two types of test probes are consistent. It is understood that in this embodiment, the test probes corresponding to the support member are in contact. In other embodiments, the test probes corresponding to the carrier can be set at intervals, and the interval is quantitative in multiple sets of learning data.

[0061] In other embodiments, the carrier body 110 includes a carrier member 112 and a plurality of auxiliary support members 113 arranged in a target shape around the carrier member 112, and the plurality of auxiliary support members 113 can be raised and lowered. Exemplarily, at least one of the plurality of auxiliary support members 113 is selectively raised to form the peripheral region 1112, while the remaining auxiliary support members 113 together with the carrier member 112 form the central region 1111. Those skilled in the art will understand that the number of auxiliary support members 113 selectively raised depends on the size of the wafer 200 under test. For example, the larger the size of the wafer 200 under test, the fewer the number of auxiliary support members 113 raised, so that more auxiliary support members 113 and the carrier member 112 together form the central region 1111, resulting in a larger radius of the central region 1111, thereby supporting a larger wafer 200 under test.

[0062] For example, in the initial state, the top walls of the multiple auxiliary supports 113 are flush with the top wall of the carrier 112. After the wafer 200 to be tested is placed on the carrier body 110, the wafer 200 to be tested comes into contact with some of the auxiliary supports 113. At this time, the auxiliary supports 113 that are not in contact with the wafer 200 to be tested can be moved upwards until their top walls are flush with the top wall of the wafer 200 to be tested. Therefore, when the detection unit 130 performs detection, some of the test probes 131 abut against the wafer 200 to be tested, while other test probes 131 abut against the moved auxiliary supports 113, so that the heat received by the multiple test probes 131 from the carrier 111 is the same, so that the deformation of the multiple test probes 131 affected by temperature is consistent, thereby reducing the impact on subsequent detection and improving accuracy. In other words, the arrangement of multiple auxiliary support members 113 enables the wafer inspection device to inspect wafers of different sizes, thereby improving the applicability of the device.

[0063] It is understood that the lifting and lowering of the multiple auxiliary support members 113 can be achieved by having at least one telescopic component, such as an electric cylinder, on the bottom wall of each auxiliary support member 113. The telescopic movement of the telescopic component moves the auxiliary support member 113 to a position where its top wall is flush with the wafer 200 under test. Preferably, since the auxiliary support member 113 is annular, multiple telescopic components are implemented, and the multiple auxiliary support members 113 are arranged at circumferential intervals to improve the stability of the auxiliary support member 113 during movement and support, and to avoid inaccurate test results due to tilting of the auxiliary support member 113 during testing.

[0064] It is understood that, in order to heat the supporting part 111, a heating unit 120 is provided in each of the supporting member 112 and each of the auxiliary support members 113, and the heating temperature of the heating unit 120 in each of the auxiliary support members 113 is the same.

[0065] This disclosure further provides an inspection apparatus, including the aforementioned wafer inspection device. Exemplarily, the inspection apparatus can be implemented as a wafer test prober.

[0066] In summary, this disclosure provides a wafer inspection apparatus and inspection device. The wafer inspection apparatus includes a carrier body, at least one heating unit, and a detection section. The carrier body includes a carrier section for supporting the wafer to be inspected; the carrier section includes a central region in contact with the wafer to be inspected, and a peripheral region surrounding the central region. The at least one heating unit is disposed on the carrier body for heating the carrier section. The detection section is movably disposed above the carrier section to reach a detection position corresponding to any area to be inspected on the wafer to be inspected. The peripheral region is configured such that the horizontal orthographic projection pattern of the detection section at any detection position is located within the carrier section. The inspection device includes the wafer inspection apparatus. In this disclosure, the peripheral region allows a portion of the test probes on the detection section to contact the wafer to be inspected and be heated by the heated wafer; while another portion of the test probes receives heat from the carrier section, thereby preventing deformation due to temperature drop.

[0067] The above embodiments are merely illustrative of the principles and effects of this disclosure and are not intended to limit this disclosure. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this disclosure. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this disclosure should still be covered by the protection scope of this disclosure.

Claims

1. A wafer inspection device, characterized in that, include: A carrier body includes a carrier portion for supporting a wafer under test; the carrier portion includes a central region in contact with the wafer under test and a peripheral region surrounding the central region; the carrier body includes a carrier member and a plurality of auxiliary supports arranged in a target shape around the carrier member, and the plurality of auxiliary supports can be raised and lowered; wherein at least one of the plurality of auxiliary supports is selectively raised to form the peripheral region, while the remaining auxiliary supports together with the carrier member form the central region; the inner diameter of the auxiliary supports is adapted to the outer diameter of the carrier member; the number of auxiliary supports selected to be raised depends on the size of the wafer under test; At least one heating unit is disposed on the support body for heating the support portion; The detection unit is disposed above the carrier body in a relatively movable manner, so as to be able to reach the detection position of any test area on the wafer to be tested; The peripheral area is configured such that the horizontal orthographic projection pattern of the detection unit at any of the detection positions is located within the bearing portion.

2. The wafer inspection apparatus according to claim 1, characterized in that, The supporting part is configured such that both the central area and the peripheral area abut against the detection part.

3. The wafer inspection apparatus according to claim 1, characterized in that, The central region is configured as a mating groove formed by recessing from the top wall of the support portion, for embedding the wafer to be tested, so that the top wall of the support portion can be flush with the top wall of the wafer to be tested embedded in the mating groove.

4. The wafer inspection apparatus according to claim 1, characterized in that, The heating unit is implemented as a plurality of units; the third heating unit is correspondingly located in the central region, and the fourth heating unit is correspondingly located in the peripheral region.

5. The wafer inspection apparatus according to claim 1, characterized in that, The detection unit includes multiple test probes arranged in an array, and the multiple test probes can be vertically extended and retracted.

6. A testing device, characterized in that, include: The wafer inspection apparatus as described in any one of claims 1-5.

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