Electronic device

Abstract

The invention provides an electronic device. The electronic device comprises a first substrate; the second substrate is arranged opposite to the first substrate; the light modulation layer is arranged between the first substrate and the second substrate; the first electrode layer is arranged between the first substrate and the light modulation layer; the second electrode layer is arranged between the second substrate and the light modulation layer; the light-to-electricity element is arranged between the first substrate and the second substrate; and the driving circuit is arranged between the first substrate and the second substrate, the driving circuit is electrically connected with the light-to-electricity conversion element, and the driving circuit is electrically connected with the first electrode layer and the second electrode layer respectively.

Description

Technical Field

[0001] This disclosure relates to an electronic device, and more particularly to an electronic device comprising a photoelectric element and a photomodulation layer. Background Technology

[0002] In recent years, with the development of technology and the increasing emphasis on environmental protection, various energy-saving and carbon-reducing products have emerged, such as smart windows. Smart windows refer to windows that can be controlled by an electric field to present different optical states (such as light-transmitting, light-blocking, or fogging states), thereby changing the light transmittance.

[0003] However, smart windows currently have many drawbacks, such as the need for an external power source to control the switching between different optical modes.

[0004] Therefore, there is an urgent need to provide a new electronic device to improve upon existing shortcomings. Summary of the Invention

[0005] This disclosure provides an electronic device, characterized in that it comprises: a first substrate; a second substrate disposed opposite to the first substrate; a light modulation layer disposed between the first substrate and the second substrate; a first electrode layer disposed between the first substrate and the light modulation layer; a second electrode layer disposed between the second substrate and the light modulation layer; a photoelectric converter disposed between the first substrate and the second substrate; and a driving circuit disposed between the first substrate and the second substrate, wherein the driving circuit is electrically connected to the photoelectric converter and is electrically connected to both the first electrode layer and the second electrode layer.

[0006] This disclosure also provides an electronic device, characterized in that it comprises: a first substrate; a second substrate disposed opposite to the first substrate, wherein the first substrate has a first region overlapping with the second substrate and a second region not overlapping with the second substrate; a light modulation layer disposed between the first substrate and the second substrate; a first electrode layer disposed between the first substrate and the light modulation layer; a second electrode layer disposed between the second substrate and the light modulation layer; a photoelectric conversion element disposed on the second region of the first substrate; and a driving circuit disposed between the first substrate and the second substrate, wherein the driving circuit is electrically connected to the photoelectric conversion element, and the driving circuit is electrically connected to the first electrode layer and the second electrode layer respectively. Attached Figure Description

[0007] Figure 1 This is a cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure.

[0008] Figure 2 This is a functional block diagram of an electronic device according to an embodiment of the present disclosure.

[0009] Figure 3 This is a cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure.

[0010] Figure 4 This is a cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure.

[0011] Figure 5 This is a block diagram of voltage signals for an electronic device according to an embodiment of the present disclosure.

[0012] Figure 6A and Figure 6B This is a top view schematic diagram of an electronic device according to an embodiment of the present disclosure.

[0013] Figure 7 This is a cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure.

[0014] Figure 8 This is a cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure.

[0015] Figure 9 This is a top view schematic diagram of an electronic device according to an embodiment of the present disclosure.

[0016] Figure 10A This is a top view schematic diagram of a photoelectric conversion element according to an embodiment of the present disclosure.

[0017] Figure 10B for Figure 10A A cross-sectional diagram of line segment A-A'.

[0018] Explanation of reference numerals in the attached figures:

[0019] 1: First substrate

[0020] 2: Second substrate

[0021] 3: Photomodulation layer

[0022] 4: Photoelectric conversion element

[0023] 41: Main body

[0024] 42: First conductive pad

[0025] 43: Second conductive pad

[0026] 51: First electrode layer

[0027] 52: Second electrode layer

[0028] 6: Conductive structure

[0029] 7: Conductive materials

[0030] 10: Buffer layer

[0031] 101: Gate insulating layer

[0032] 102: First insulating layer

[0033] 103: Second insulating layer

[0034] 104: Third Insulation Layer

[0035] 1041: First Sub-insulation Layer

[0036] 1042: Second Sub-insulation Layer

[0037] 1043: Third Sub-insulation Layer

[0038] 105: Passivation layer

[0039] 11: Semiconductor layer

[0040] 11A: First Semiconductor

[0041] 11B: Second Semiconductor

[0042] 12: First metal layer

[0043] 12A: First gate

[0044] 12B: Second gate

[0045] 13: Second metal layer

[0046] 13A: First Source

[0047] 13B: First drain electrode

[0048] 13C: Second source

[0049] 13D: Second drain

[0050] 13E, 13F: Metal parts

[0051] 14: Third metal layer

[0052] 14A: Part One

[0053] 14B: Part Two

[0054] 14C: Part Three

[0055] 14D: Part Four

[0056] 15, 17, 181, 182: Conductive layer

[0057] 16: Fourth metal layer

[0058] 16A: Part Five

[0059] 16B: Signal transmission line

[0060] 16C: Part VI

[0061] A1: First Passage Area

[0062] A2: Second Passage Area

[0063] A3: Zone 1

[0064] A4: Second District

[0065] C: Drive circuit

[0066] H1, H2, H3, H4, H5, H6, H7, H8, H9: Through holes

[0067] L: Light source

[0068] LU: Another subunit

[0069] R1: Light-tunable region

[0070] S1: First spacer

[0071] S2: Second spacer

[0072] TFT1: First Thin Film Transistor

[0073] TFT2: Second Thin Film Transistor

[0074] U: Subunit

[0075] WL1, WL2: Lines

[0076] X, Y: Direction

[0077] Z: View from above Detailed Implementation

[0078] The following describes the implementation of this disclosure through specific embodiments. Those skilled in the art can easily understand other advantages and effects of this disclosure from the content disclosed in this specification. This disclosure can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed in various ways for different viewpoints and applications without departing from the spirit of this disclosure.

[0079] It should be noted that, unless otherwise specified herein, the presence of an element "a" is not limited to having a single element, but may include one or more of the elements. Furthermore, the ordinal numbers used in the specification and claims, such as "first" and "second," to modify elements of a claim, do not in themselves imply or represent any prior ordinal number for that claimed element, nor do they represent the order of one claimed element with another, or the order of manufacture. The use of these ordinal numbers is solely to clearly distinguish one claimed element with a given name from another claimed element with the same name.

[0080] Throughout this disclosure and in the appended claims, certain terms are used to refer to specific elements. Those skilled in the art will understand that electronic device manufacturers may use different names to refer to the same element. This document is not intended to distinguish between elements that have the same function but different names. In the following description and claims, words such as “comprising,” “containing,” and “having” are open-ended terms and should therefore be interpreted as “containing but not limited to…”. Thus, when the terms “comprising,” “containing,” and / or “having” are used in the description of this disclosure, they specify the presence of the corresponding feature, area, step, operation, and / or component, but do not exclude the presence of one or more of the corresponding feature, area, step, operation, and / or component.

[0081] In this text, the terms "about," "approximately," "substantially," and "roughly" typically indicate within 10%, 5%, 3%, 2%, 1%, or 0.5% of a given value or range. The given quantity is an approximate quantity; that is, even without specific mention of "about," "approximately," "substantially," or "roughly," the meaning of these terms is implied. Furthermore, the phrases "range from the first value to the second value" or "range between the first value and the second value" indicate that the range includes the first value, the second value, and other values ​​in between.

[0082] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the relevant art and the background or context of this disclosure, and should not be interpreted in an idealized or overly formal manner, unless specifically defined herein.

[0083] Furthermore, relative terms such as "below" or "bottom" and "above" or "top" may be used in the embodiments to describe the relative relationship of one element to another in the diagram. It is understood that if the device in the diagram is flipped upside down, an element depicted on the "below" side will become an element on the "above" side. When a corresponding component (e.g., a membrane or region) is referred to as "on another component," it can be directly on the other component, or there may be other components between them. On the other hand, when a component is referred to as "directly on another component," there are no components between them. Additionally, when a component is referred to as "on another component," there is a vertical relationship between them in the top view, and this component can be above or below the other component, depending on the orientation of the device.

[0084] It should be understood that, according to embodiments of this disclosure, the thickness, width, or distance between elements can be measured using an optical microscope (OM), a scanning electron microscope (SEM), an alpha-step thickness gauge, an ellipsometry, or other suitable methods. According to some embodiments, a scanning electron microscope can be used to obtain a cross-sectional image containing the elements to be measured, and the thickness, width, or distance between elements can be measured. Furthermore, any two values ​​or directions used for comparison may have a certain degree of error. If the first value equals the second value, it implies an error of approximately 10% between the first and second values; if the first direction is perpendicular to the second direction, the angle between the first and second directions may be between 80 and 100 degrees; if the first direction is parallel to the second direction, the angle between the first and second directions may be between 0 and 10 degrees.

[0085] In this disclosure, the electronic device may include, but is not limited to, a display device, a backlight device, an antenna device, a sensing device, or a splicing device. The electronic device may be a bendable or flexible electronic device. The display device may be a non-emissive display device or a self-emissive display device. The antenna device may be a liquid crystal type antenna device or a non-liquid crystal type antenna device. The sensing device may be a sensing device that senses capacitance, light, heat, or ultrasound, but is not limited to these. Electronic components may include passive and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. Diodes may include light-emitting diodes (LEDs) or photodiodes. Light-emitting diodes may include, for example, organic light-emitting diodes (OLEDs), mini LEDs, micro LEDs, or quantum dot LEDs, but are not limited to these. The splicing device may be, for example, a display splicing device or an antenna splicing device, but is not limited to these. It should be noted that the electronic device may be any arrangement and combination of the foregoing, but is not limited to these. The following description will use display devices as electronic devices or splicing devices to illustrate the contents of this disclosure, but this disclosure is not limited thereto.

[0086] Furthermore, the electronic device can be rectangular, circular, polygonal, have curved edges, or other suitable shapes. The electronic device may include peripheral systems such as processing systems, drive systems, control systems, light source systems, and shelving systems to support display devices or splicing devices.

[0087] It should be noted that the technical solutions provided in the different embodiments below can be substituted for, combined or mixed with each other to constitute another embodiment without violating the spirit of this disclosure.

[0088] Figure 1 This is a cross-sectional schematic diagram of an electronic device according to an embodiment of the present disclosure. Figure 2 This is a functional block diagram of an electronic device according to an embodiment of the present disclosure.

[0089] In one embodiment of this disclosure, as Figure 1 As shown, the electronic device may include: a first substrate 1; a second substrate 2 disposed opposite to the first substrate 1; a light modulation layer 3 disposed between the first substrate 1 and the second substrate 2; a photoelectric conversion element 4 disposed between the first substrate 1 and the second substrate 2; and a driving circuit C disposed between the first substrate 1 and the second substrate 2, wherein the driving circuit C is electrically connected to the photoelectric conversion element 4.

[0090] In one embodiment of this disclosure, as Figure 1As shown, the electronic device may further include: a first electrode layer 51 disposed between the first substrate 1 and the light modulation layer 3; and a second electrode layer 52 disposed between the second substrate 2 and the light modulation layer 3; wherein the driving circuit C is electrically connected to the first electrode layer 51 and the second electrode layer 52 respectively. In this disclosure, by applying signals to the first electrode layer 51 and the second electrode layer 52 to control the light modulation layer 3, the light modulation layer 3 can switch between a light-blocking state and a light-transmitting state, enabling the electronic device to achieve a light-blocking or light-transmitting effect. In other embodiments, by applying signals to the first electrode layer 51 and the second electrode layer 52 to control the light modulation layer 3, the light modulation layer 3 can switch between a fogged state and a light-transmitting state, enabling the electronic device to achieve a fogged or light-transmitting effect. In one embodiment of this disclosure, the electronic device can be applied to a smart window, which can be selectively applied to architectural glass, vehicle window glass, or other applications. In addition to having adjustable light capabilities, this smart window may also have heat insulation and / or sound insulation capabilities, depending on its structural design.

[0091] This disclosure utilizes a photoelectric conversion element 4 (e.g., a solar cell) to receive light and convert it into electrical energy to supply a driving circuit C. The driving circuit C can provide signals to the first electrode layer 51 and the second electrode layer 52 respectively, and generate an electric field by applying a signal (voltage) between the first electrode layer 51 and the second electrode layer 52 to drive the light modulation layer 3. By using the photoelectric conversion element 4, the electronic device can generate electrical energy to control the light modulation layer 3 without the need for an external power source, thereby achieving power saving. Furthermore, when the photoelectric conversion element 4 is disposed between the first substrate 1 and the second substrate 2, the influence of other external environmental factors (e.g., moisture, air) on the photoelectric conversion element 4 can be reduced, thus improving the lifespan of the photoelectric conversion element 4.

[0092] In one embodiment of this disclosure, as Figure 1As shown, the electronic device may include: a semiconductor layer 11, including a first semiconductor 11A and a second semiconductor 11B; a gate insulating layer 101 disposed on the semiconductor layer 11; a first metal layer 12 disposed on the gate insulating layer 101, and including a first gate 12A and a second gate 12B, wherein the first gate 12A is disposed opposite to or overlapping the first semiconductor layer 11A, and the second gate 12B is disposed opposite to or overlapping the second semiconductor layer 11B; a first insulating layer 102 is disposed on the first metal layer 12; a second metal layer 13 is disposed on the first insulating layer 102 and includes a first source 13A, a first drain 13B, a second source 13C, and a second drain 13D, wherein the first source 13A and the first drain 13B are electrically connected to the first semiconductor layer 11A, the second source 13C and the second drain 13D are electrically connected to the second semiconductor layer 11B, and the first drain 13B is electrically connected to the second source 13C. The second metal layer 13 may further include a metal portion 13E, which can be electrically connected to the driving circuit C through line WL1 (the two are electrically connected by dashed lines in the figure); and a second insulating layer 103 is disposed on the second metal layer 13.

[0093] A first semiconductor 11A, a gate insulating layer 101, a first gate 12A, a first insulating layer 102, a first source 13A, and a first drain 13B can form a first thin-film transistor (TFT) 1. A second semiconductor 11B, a gate insulating layer 101, a second gate 12B, a first insulating layer 102, a second source 13C, and a second drain 13D can form a second thin-film transistor (TFT) 2. The first TFT 1 can be electrically connected to the second TFT 2, and the first TFT 1 and the second TFT 2 form a driving circuit C, which can contain multiple transistors. It should be noted that the structures of the first TFT 1 and the second TFT 2 in the figure are only examples and can be adjusted to other stacked structures (e.g., dual-gate or bottom-gate transistors) or include more transistors as needed.

[0094] In one embodiment of this disclosure, as Figure 1As shown, the electronic device may further include: a third metal layer 14 disposed on the second insulating layer 103, and including a first portion 14A, a second portion 14B, a third portion 14C, and a fourth portion 14D, wherein the first portion 14A is electrically connected to the first source 13A through a through-hole H1, the second portion 14B is electrically connected to the first source 13A through a through-hole H2, the third portion 14C is electrically connected to the second drain 13D through a through-hole H3, and the fourth portion 14D is electrically connected to the metal portion 13E of the second metal layer 13 through a through-hole H4, wherein the photoelectric conversion element 4 is disposed on and electrically connected to the third portion 14C of the third metal layer 14; and a conductive layer 15 is disposed on and electrically connected to the photoelectric conversion element 4. The third part 14C, the photoelectric conversion element 4, and the conductive layer 15 can be stacked to form a solar cell structure. The photoelectric conversion element 4 may include a light-absorbing layer material. The third part 14C and the conductive layer 15 can serve as the lower electrode and upper electrode of the solar cell structure, respectively. The signal can be output to the driving circuit C through the upper and lower electrodes.

[0095] A first electrode layer 51 is disposed on the second insulating layer 103 and electrically connected to the fourth portion 14D of the third metal layer 14; a third insulating layer 104 is disposed on the third metal layer 14, the conductive layer 15, and the first electrode layer 51; a fourth metal layer 16 is disposed on the third insulating layer 104 and includes a fifth portion 16A and a signal transmission line 16B, wherein the fifth portion 16A is electrically connected to the first portion 14A of the third metal layer 14 through a through-hole H5, and the signal transmission line 16B is electrically connected to the second portion 14B of the third metal layer 14 and one end (or the first electrode layer 51) of the photoelectric conversion element 4 through through-holes H6 and H7, respectively. More specifically, the signal transmission line 16B is electrically connected to the second portion 14B of the third metal layer 14 through through-hole H6, and the signal transmission line 16B is electrically connected to the conductive layer 15 through through-hole H7; and a passivation layer 105 is disposed on the third insulating layer 104 and the fourth metal layer 16. The second electrode layer 52 is disposed on the second substrate 2, and the light modulation layer 3 is disposed between the first electrode layer 51 and the second electrode layer 52. The light modulation layer 3 can be controlled by applying signals to the first electrode layer 51 and the second electrode layer 52, causing the light modulation layer 3 to switch between a light-blocking state and a light-transmitting state. In one embodiment of this disclosure, as... Figure 1 As shown, the conductive layer 15 and the first electrode layer 51 can be selectively the same conductive layer, that is, the conductive layer 15 and the first electrode layer 51 can be formed, for example, using the same photolithography process. This can simplify the process steps, but is not limited to this.

[0096] In this disclosure, the first substrate 1 and the second substrate 2 may be flexible substrates or rigid substrates, respectively. The materials of the first substrate 1 and the second substrate 2 may include glass, quartz, sapphire, ceramic, plastic, polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), other suitable materials, or combinations thereof, but this disclosure is not limited thereto. In this disclosure, the materials of the first semiconductor 11A and the second semiconductor 11B may each comprise amorphous silicon, polycrystalline silicon (e.g., low-temperature polycrystalline silicon (LTPS)), or oxide semiconductors (e.g., indium gallium zinc oxide (IGZO) or indium gallium oxide (IGO)), but this disclosure is not limited thereto. Furthermore, the first semiconductor and 11A and the second semiconductor 11B may each comprise doped carriers, such as N-type carriers or P-type carriers. In one embodiment of this disclosure, the doping carriers of the first semiconductor 11A may be different from those of the second semiconductor 11B. For example, the first semiconductor 11A may contain N-type carriers to form a doped N-semiconductor, while the second semiconductor 11B may contain P-type carriers to form a doped P-semiconductor, but this disclosure is not limited thereto. In other embodiments (not shown), the first semiconductor 11A may contain P-type carriers to form a doped P-semiconductor, while the second semiconductor 11B may contain N-type carriers to form a doped N-semiconductor, but this disclosure is not limited thereto. In this disclosure, the gate insulating layer 101, the first insulating layer 102, the second insulating layer 103, the third insulating layer 104, and the passivation layer 105 may each contain a single-layer or multi-layer insulating layer structure, and the materials of the gate insulating layer 101, the first insulating layer 102, the second insulating layer 103, the third insulating layer 104, and the passivation layer 105 may each contain silicon nitride, silicon oxide, silicon oxynitride, silicon carbonitride, aluminum oxide, or combinations thereof, but this disclosure is not limited thereto. In this disclosure, the first metal layer 12, the second metal layer 13, the third metal layer 14 and the fourth metal layer 16 may each comprise a metallic material, a metal oxide material, an alloy thereof or a combination thereof, such as gold, silver, copper, palladium, platinum, ruthenium, aluminum, cobalt, nickel, titanium, molybdenum, manganese, indium zinc oxide (IZO), indium tin oxide (ITO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), or aluminum zinc oxide (AZO), but this disclosure is not limited thereto.In this disclosure, the materials of the first electrode layer 51 and the second electrode layer 52 may each comprise a transparent conductive material, such as indium zinc oxide (IZO), indium tin oxide (ITO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), or combinations thereof, but this disclosure is not limited thereto. In this disclosure, the light-modulating layer 3 comprises a liquid crystal material or an electrochromic material. Suitable liquid crystal materials may include, for example, polymer-dispersed liquid crystal (PDLC), polymer network liquid crystal (PNLC), cholesteric texture liquid crystal, twisted nematic liquid crystal (TN LC), super twisted nematic liquid crystal (STN LC), other suitable liquid crystal materials, or combinations thereof, but this disclosure is not limited thereto. In this disclosure, the photoelectric conversion element 4 may comprise an amorphous silicon PIN solar diode, a copper indium gallium selenide solar cell, a perovskite solar cell, or combinations thereof, but this disclosure is not limited thereto.

[0097] In one embodiment of this disclosure, the photoelectric conversion element 4 can absorb light source L to convert light energy into electrical energy. Therefore, the elements or layers between the photoelectric conversion element 4 and the light source L are preferably made of transparent materials to improve light conversion efficiency. In this disclosure, the material of the conductive layer 15 may include indium zinc oxide (IZO), indium tin oxide (ITO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), or combinations thereof, but this disclosure is not limited thereto.

[0098] In this disclosure, as Figure 1 and Figure 2 As shown, the photoelectric element 4, for example, can absorb at least a portion of the light source L and convert it into an electrical signal. This signal can then be output to the driving circuit C via the third portion 14C of the third metal layer 14 and the signal transmission line 16B of the fourth metal layer 16. The driving circuit C converts the DC signal into an AC signal and transmits the AC signal to at least one of the first electrode layer 51 or the second electrode layer 52, thereby controlling the light modulation layer 3, but is not limited thereto. Compared to controlling the light modulation layer 3 with a DC signal, controlling it with an AC signal can reduce the degradation of the liquid crystal material in the light modulation layer 3 and improve the lifespan of the electronic device.

[0099] In one embodiment of this disclosure, as Figure 1As shown, the electronic device may further include: a buffer layer 10 disposed on the first substrate 1, wherein the driving circuit C is disposed on the buffer layer 10. In this disclosure, the material of the buffer layer 10 may include silicon nitride, silicon oxide, silicon oxynitride, silicon carbonitride, or combinations thereof, but this disclosure is not limited thereto.

[0100] In one embodiment of this disclosure, as Figure 1 As shown, the electronic device may further include: a conductive structure 6 disposed between the first substrate 1 and the second substrate 2, wherein a driving circuit C is disposed between the first substrate 1 and the light modulation layer 3, and the driving circuit C is electrically connected to the second electrode layer 52 via the conductive structure 6. More specifically, the driving circuit C is electrically connected to the conductive structure 6, for example, via a first portion 14A of the third metal layer 14 and / or a fifth portion 16A of the fourth metal layer 16, to transmit signals from the driving circuit C to the second electrode layer 52. In this disclosure, the conductive structure 6 may include solder bumps, conductive pillars (metal pillars), or conductive particles, or combinations thereof. The conductive structure 6 may contain silver, aluminum, nickel, chromium, copper, gold, palladium, platinum, tin, tungsten, rhodium, iridium, ruthenium, magnesium, zinc, their alloys, or combinations thereof, but this disclosure is not limited thereto. Furthermore, the conductive structure 6 may be formed using conductive paste (e.g., silver paste) or anisotropic conductive film (ACF), but this disclosure is not limited thereto.

[0101] In one embodiment of this disclosure, as Figure 1As shown, the electronic device may further include a first spacer S1 disposed between the first substrate 1 and the second substrate 2, wherein the first spacer S1 overlaps with the driving circuit C in the top view Z direction of the first substrate 1. In some embodiments, the projection of the first spacer S1 onto the first substrate 1 in the top view Z direction of the first substrate 1 may be located within the projection of the driving circuit C onto the first substrate 1. In other words, the projected area of ​​the first spacer S1 on the first substrate 1 may be smaller than the projected area of ​​the driving circuit C on the first substrate 1. The first spacer S1 can be used to maintain the thickness of the light modulation layer 3, reducing the damage to components inside the electronic device or affecting the dimming uniformity of the light modulation layer 3 in different areas when the electronic device is subjected to external pressure. The first spacer S1 may affect the optical performance of the light modulation layer 3 adjacent to it, thus affecting the transmittance of the electronic device. Therefore, when the first spacer S1 is designed to overlap with the driving circuit C, since the light modulation layer 3 in the area overlapping with the driving circuit C is already a non-optically adjustable region, the above design can reduce the possibility of the first spacer S1 affecting the optically adjustable region (aperture ratio). In addition, the first spacer S1 may interfere with the photoelectric conversion element 4 receiving the light source L. When the first spacer S1 is designed to overlap with the driving circuit C, the influence of the first spacer S1 on the photoelectric conversion element 4 receiving the light source L can be reduced, improving the performance of the photoelectric conversion element 4. In this disclosure, the material of the first spacer S1 may include resin, organic materials, other suitable materials, or combinations thereof, but this disclosure is not limited thereto. In this disclosure, the cross-sectional shape of the first spacer S1 is not particularly limited. For example, it may be a cylinder, a rectangular prism, a trapezoidal prism, a triangular prism, a cone, a triangular pyramid, or other irregular prisms, but this disclosure is not limited thereto.

[0102] In one embodiment of this disclosure, as Figure 1 As shown, the electronic device may further include: a second spacer S2 disposed between the first substrate 1 and the second substrate 2, with the signal transmission line 16B electrically connected to one end of the photoelectric converter 4. In the top view Z direction of the first substrate 1, the second spacer S2 overlaps with the signal transmission line 16B. Furthermore, the second spacer S2 may affect the optical performance of the light modulation layer 3 adjacent to the second spacer S2. Therefore, when the second spacer S2 is designed to overlap with the signal transmission line 16B, since the area of ​​the light modulation layer 3 overlapping with the signal transmission line 16B is already a non-optically tunable region, the above design can reduce the possibility of the second spacer S2 affecting the optically tunable region (aperture ratio). Additionally, the second spacer S2 may interfere with the photoelectric converter 4 receiving the light source L. Designing the second spacer S2 to overlap with the signal transmission line 16B can reduce the influence of the second spacer S2 on the photoelectric converter 4 receiving the light source L, thereby improving the performance of the photoelectric converter 4. In this disclosure, the second spacer S2 may be made of the same or different material as the first spacer S1, which will not be elaborated here.

[0103] In one embodiment of this disclosure, as Figure 1 As shown, in the top view Z direction of the first substrate 1, the photoelectric conversion element 4 and the driving circuit C are spaced apart by a distance, that is, in the top view Z direction of the first substrate 1, the photoelectric conversion element 4 and the first thin-film transistor TFT1 and the second thin-film transistor TFT2 of the driving circuit C do not overlap. In one embodiment of this disclosure, as... Figure 1 As shown, in the top view Z direction of the first substrate 1, the region in the first semiconductor 11A that overlaps with the first gate 12A can be defined as the first channel region A1 of the first thin film transistor TFT1, and the region in the second semiconductor 11B that overlaps with the second gate 12B can be defined as the second channel region A2 of the second thin film transistor TFT2. In the top view Z direction of the first substrate 1, the photoelectric conversion element 4 does not overlap with the first channel region A1 of the first thin film transistor TFT1 and the second channel region A2 of the second thin film transistor TFT2. That is, in the top view Z direction of the first substrate 1, the photoelectric conversion element 4 does not overlap with the channel regions (e.g., the first channel region A1 and the second channel region A2) of the driving circuit C.

[0104] Figure 3 This is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure. Figure 3 electronic devices and Figure 1 Similar, except for the following differences.

[0105] In one embodiment of this disclosure, as Figure 3 As shown, in the top view Z direction of the first substrate 1, the photoelectric conversion element 4 can overlap with the driving circuit C. More specifically, in the top view Z direction of the first substrate 1, the photoelectric conversion element 4 can overlap with the first thin-film transistor TFT 1 and the second thin-film transistor TFT 2. In one embodiment of this disclosure, in the top view Z direction of the first substrate 1, the photoelectric conversion element 4 can overlap with the first channel region A1 of the first thin-film transistor TFT 1 and the second channel region A2 of the second thin-film transistor TFT 2. In other words, in the top view Z direction of the first substrate 1, the photoelectric conversion element 4 overlaps with a channel region (e.g., the first channel region A1 or the second channel region A2) of the driving circuit C. In this way, the optically modulated area of ​​the electronic device (i.e., the first electrode layer 51 and the second electrode layer 52) can be increased.

[0106] In this disclosure, other components and materials of the electronic device may be as described above, and will not be repeated here.

[0107] Figure 4 This is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure. Figure 4 electronic devices and Figure 1 Similar, except for the following differences.

[0108] In one embodiment of this disclosure, as Figure 4 As shown, the electronic device also includes a conductive layer 17 electrically connected to the photoelectric converter 4, wherein the photoelectric converter 4 is disposed between the conductive layer 15 and the conductive layer 17. In this embodiment, the conductive layer 15 and the conductive layer 17 can serve as the upper and lower electrodes of the photoelectric converter 4, respectively, and the photoelectric converter 4 can output signals to the driving circuit C through the upper and lower electrodes. More specifically, the photoelectric converter 4 can be electrically connected to the driving circuit C through the conductive layer 17 and the third portion 14C of the third metal layer 14, and the photoelectric converter 4 can also be electrically connected to the driving circuit C through the signal transmission line 16B of the conductive layer 15 and the fourth metal layer 16 and the second portion 14B of the third metal layer 14, thereby outputting signals to the driving circuit C. After the driving circuit C converts the DC signal into an AC signal, it transmits the AC signal to at least one of the first electrode layer 51 and the second electrode layer 52, thereby controlling the light modulation layer 3, enabling the electronic device to achieve a light-tunable effect (e.g., a light-blocking or light-transmitting effect).

[0109] In one embodiment of this disclosure, as Figure 4 As shown, conductive layer 17 is closer to the light source L than conductive layer 15. In this case, conductive layer 17 is preferably made of a transparent conductive material, while conductive layer 15 can be selectively made of a transparent conductive material or a non-transparent conductive material (e.g., a metallic material). In one embodiment of this disclosure, as... Figure 4 As shown, the first substrate 1 is disposed adjacent to the light source L relative to the second substrate 2, and the driving circuit C is disposed adjacent to the light source L (e.g., ambient light, but not limited thereto) relative to the light modulation layer 3.

[0110] In this disclosure, since the photoelectric conversion element 4 needs to absorb light source L to convert light energy into electrical energy, the element between the photoelectric conversion element 4 and the light source L is preferably made of a transparent material or a material with high transparency to reduce the impact on light conversion efficiency. In this disclosure, the material of the conductive layer 17 may include indium zinc oxide (IZO), indium tin oxide (ITO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), aluminum zinc oxide (AZO), or combinations thereof, but this disclosure is not limited thereto. In one embodiment of this disclosure, the conductive layer 15 may be made of a transparent or non-transparent material. Suitable materials include metallic materials, metal oxide materials, alloys thereof, or combinations thereof, such as gold, silver, copper, palladium, platinum, ruthenium, aluminum, cobalt, nickel, titanium, molybdenum, manganese, indium zinc oxide (IZO), indium tin oxide (ITO), indium tin zinc oxide (ITZO), indium gallium zinc oxide (IGZO), or aluminum zinc oxide (AZO), but this disclosure is not limited thereto.

[0111] In this disclosure, other components and materials of the electronic device may be as described above, and will not be repeated here.

[0112] Figure 5This is a block diagram of voltage signals for an electronic device according to an embodiment of the present disclosure.

[0113] In one embodiment of this disclosure, the voltage signal transmission path of the electronic device may refer to Figure 5 As shown, after absorbing at least a portion of the light source (light energy), the photoelectric element converts the light energy into a voltage signal and inputs it to the drive circuit C. The voltage signal is stabilized by the voltage regulator and DC-to-AC converter in the drive circuit C, and then an AC voltage signal is output. The output voltage signal is provided to the first electrode layer and / or the second electrode layer, thereby controlling the light modulation layer 3 (e.g., ...). Figure 1 As shown, the drive circuit C enables the electronic device to achieve a light-shielding or light-transmitting effect, but is not limited thereto. In other embodiments, the drive circuit C may optionally include other circuit elements.

[0114] Figure 6A and Figure 6B This is a top view schematic diagram of an electronic device according to an embodiment of the present disclosure.

[0115] In one embodiment of this disclosure, as Figure 6A and Figure 6B As shown, the light modulation layer 3 (such as...) Figure 1 (As shown) may include at least one optically tunable region R1, where optically tunable region R1 refers to the optical modulation layer 3 (e.g., Figure 1 The area shown can be switched between opaque, translucent, or fogged states. For more details, please refer to [reference needed]. Figure 1 , Figure 6A and Figure 6B As shown, the light-tunable region R1 in the light modulation layer 3 can be controlled to switch between a light-shielding state (or fog state) and a light-transmitting state by applying signals to the first electrode layer 51 and the second electrode layer 52. In one embodiment of this disclosure, reference is made to... Figure 1 , Figure 6A and Figure 6B As shown, the light-tunable region R1 refers, for example, to the region where the first conductive layer 51 and the second conductive layer 52 overlap in the light modulation layer 3, but is not limited thereto. In one embodiment of this disclosure, as... Figure 6A and Figure 6B As shown, in the top view Z direction of the first substrate 1, the light-tunable region R1 may not overlap with the driving circuit C and / or the photoelectric conversion element 4, but this disclosure is not limited thereto.

[0116] In one embodiment of this disclosure, as Figure 6A As shown, in the top view Z direction of the first substrate 1, the driving circuit C may not overlap with the photoelectric conversion element 4. The driving circuit C may be disposed between the light-tunable region R1 and the photoelectric conversion element 4, but is not limited thereto. In one embodiment of this disclosure, as... Figure 6BAs shown, in the top view Z direction of the first substrate 1, the driving circuit C may not overlap with the photoelectric conversion element 4, and the photoelectric conversion element 4 may be disposed between the light-adjustable region R1 and the driving circuit C, but this disclosure is not limited thereto. In one embodiment of this disclosure, although not shown in the figure, in the top view Z direction of the first substrate 1, the driving circuit C may at least partially overlap with the photoelectric conversion element 4, but this disclosure is not limited thereto. It should be noted that in the top view Z direction of the first substrate 1, the size, outline, and positional relationship (overlap relationship) of the driving circuit C, the photoelectric conversion element 4, and the light-adjustable region R1 can be adjusted according to requirements.

[0117] Figure 7 This is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure. Figure 7 electronic devices and Figure 1 Similar, except for the following differences.

[0118] In one embodiment of this disclosure, as Figure 7 As shown, the photoelectric conversion element 4 may include a main body 41 (containing light-absorbing material), a first conductive pad 42, and a second conductive pad 43. The first conductive pad 42 and the second conductive pad 43 may be electrically connected to the main body 41, respectively. The first conductive pad 42 and the second conductive pad 43 may be located, for example, on the same side of the main body 41, such as the side away from the light source L, but are not limited thereto. The photoelectric conversion element 4 may be electrically connected to the driving circuit C through a conductive material 7 to transmit signals to the driving circuit C. More specifically, as shown... Figure 7 As shown, the photoelectric conversion element 4 can be electrically connected to the driving circuit C through the conductive material 7, the second part 14B and the third part 14C of the third metal layer 14, respectively, so that the signal provided by the photoelectric conversion element 4 can be transmitted to the driving circuit C through the first conductive pad 42 and the second conductive pad 43, respectively, and then the driving circuit C can convert the DC signal into an AC signal and transmit it to the first electrode layer 51 or the second electrode layer 52.

[0119] In this disclosure, the conductive material 7 may include solder bumps, metal pillars, or conductive particles. The conductive material 7 may contain silver, aluminum, nickel, chromium, copper, gold, palladium, platinum, tin, tungsten, rhodium, iridium, ruthenium, magnesium, zinc, alloys thereof, or combinations thereof, but this disclosure is not limited thereto. Furthermore, the conductive material 7 may be formed using conductive paste (e.g., silver paste) or anisotropic conductive film (ACF), but this disclosure is not limited thereto. In one embodiment of this disclosure, the conductive material 7 may include silver paste. In this disclosure, other components and materials of the electronic device may be as described above and will not be repeated here. In the top view Z direction of the first substrate 1, the thickness of the conductive material 7 may be less than the thickness of the conductive structure 6. In one embodiment of this disclosure, in the top view Z direction of the first substrate 1, the thickness of the conductive structure 6 may be greater than the thickness of the photoelectric conversion element 4. In one embodiment of this disclosure, in a cross-section, the width of the conductive material 7 may be less than the width of the second portion 14B, or the width of the conductive material 7 may be less than the width of the third portion 14C. In one embodiment of this disclosure, in a cross-section, the width of the first conductive pad 42 may be greater than or equal to the width of the conductive material 7, and / or the width of the second conductive pad 43 may be greater than or equal to the width of the conductive material 7. In one embodiment of this disclosure, in a cross-section, the projections of the first semiconductor 11A and the second semiconductor 11B onto the first substrate 1 may be located within the projection of the main body portion 41 onto the first substrate 1. In other words, the projected area of ​​the first semiconductor 11A and the second semiconductor 11B on the first substrate 1 may be smaller than the projected area of ​​the main body portion 41 on the first substrate 1.

[0120] Figure 8 This is a schematic cross-sectional view of an electronic device according to an embodiment of the present disclosure. Figure 8 electronic devices and Figure 1 Similar, except for the following differences.

[0121] In one embodiment of this disclosure, as Figure 8 As shown, the electronic device may include: a first substrate 1; a second substrate 2 disposed opposite to the first substrate 1, wherein the first substrate 1 has a first region A3 overlapping with the second substrate 2 and a second region A4 not overlapping with the second substrate 2; a light modulation layer 3 disposed between the first substrate 1 and the second substrate 2; a first electrode layer 51 disposed between the first substrate 1 and the light modulation layer 3; a second electrode layer 52 disposed between the second substrate 2 and the light modulation layer 3; a photoelectric conversion element 4 disposed on the second region A4 of the first substrate 1; and a driving circuit C disposed between the first substrate 1 and the second substrate 2, wherein the driving circuit C is electrically connected to the photoelectric conversion element 4, and the driving circuit C is electrically connected to the first electrode layer 51 and the second electrode layer 52 respectively. In one embodiment of this disclosure, as Figure 8As shown, in the top view Z direction of the first substrate 1, the photoelectric conversion element 4 does not overlap with the second substrate 2. In one embodiment of this disclosure, in the top view Z direction of the first substrate 1, the photoelectric conversion element 4 does not overlap with the driving circuit C. In one embodiment of this disclosure, in the top view Z direction of the first substrate 1, the photoelectric conversion element 4 does not overlap with the first electrode layer 51 and the second electrode layer 52.

[0122] In one embodiment of this disclosure, as Figure 8 As shown, the photoelectric conversion element 4 may include a main body 41, a first conductive pad 42, and a second conductive pad 43, with the first conductive pad 42 and the second conductive pad 43 electrically connected to the main body 41. The photoelectric conversion element 4 can be electrically connected to the driving circuit C through a conductive material 7 to transmit signals to the driving circuit C. More specifically, as shown... Figure 8 As shown, the first conductive pad 42 of the photoelectric converter 4 can be electrically connected to the driving circuit C through the conductive material 7, the conductive layer 181 (for example, it can be on the same layer as the first electrode layer 51, but is not limited thereto), and the first part 14A of the third metal layer 14. The second conductive pad 43 of the photoelectric converter 4 can be electrically connected to the driving circuit C through the conductive material 7, the conductive layer 182 (for example, it can be on the same layer as the first electrode layer 51, but is not limited thereto), the second part 14B of the third metal layer 14, and the metal part 13F of the second metal layer 13 (the metal part 13F is shown as being electrically connected to the driving circuit C through line WL2 in the figure), thereby transmitting the signal provided by the photoelectric converter 4 to the driving circuit C. The driving circuit C is electrically connected to the first electrode layer 51 via the metal portion 13E of the second metal layer 13 and the fourth portion 14D of the third metal layer 14 (the metal portion 13E is electrically connected to the driving circuit C via line WL1, indicated by the dashed line in the figure). The driving circuit C is also electrically connected to the second electrode layer 52 via the first portion 14A of the third metal layer 14 and the conductive structure 6, providing signals (voltages) to the first electrode layer 51 and the second electrode layer 52 respectively, thereby controlling the light modulation layer 3 and enabling the electronic device to achieve the effects of light blocking or light transmission.

[0123] In this disclosure, conductive layers 181 and 182 may be the same layer as the first electrode layer 51, which simplifies the process steps, but is not limited thereto. Therefore, the materials of conductive layers 181 and 182 may be the same as those of the first electrode layer 51, and will not be described again here. In other embodiments (not shown), conductive layers 181 and 182 may also be different layers from the first electrode layer 51. In this disclosure, the conductive material 7 may include solder bumps, metal pillars, or conductive particles. The conductive material 7 may contain silver, aluminum, nickel, chromium, copper, gold, palladium, platinum, tin, tungsten, rhodium, iridium, ruthenium, magnesium, zinc, alloys thereof, or combinations thereof, but this disclosure is not limited thereto. Furthermore, the conductive material 7 may be formed using conductive paste (e.g., silver paste) or anisotropic conductive film (ACF), but this disclosure is not limited thereto. In one embodiment of this disclosure, the conductive material 7 may be an anisotropic conductive film. In this disclosure, other components and materials of the electronic device may be as described above, and will not be described again here. It should be noted that, Figure 1 , Figures 3-4 , Figures 7-8 In this embodiment, although the seal is not shown, a seal may be provided between the first substrate 1 and the second substrate 2, surrounding the light modulation layer 3. A portion of the seal may be located, for example, between the light modulation layer 3 and the conductive structure 6, or the conductive structure 6 may be located, for example, between the light modulation layer 3 and the seal.

[0124] Figure 9 This is a top view schematic diagram of an electronic device according to an embodiment of the present disclosure.

[0125] In one embodiment of this disclosure, as Figure 9 As shown, the electronic device can be applied to a smart window (e.g., an LCD window). The smart window may contain multiple sub-units U arranged adjacent to each other (e.g., in an array). The cross-sectional stacking of these sub-units U can be referred to the aforementioned... Figure 1 , Figure 3 , Figure 4 , Figure 7 and Figure 8 As shown in either of them, they will not be elaborated upon here.

[0126] In one embodiment of this disclosure, as Figure 9 As shown, a smart window (e.g., an LCD window) may selectively include or exclude another sub-unit LU. This other sub-unit LU may be adjacent to multiple sub-units U; for example, multiple sub-units U may be arranged around another sub-unit LU, but this disclosure is not limited thereto. The other sub-unit LU may, for example, contain liquid crystal material, but may not include the driving circuit C and the photoelectric conversion element 4 (e.g., ...). Figure 1shown) or other components (such as the first electrode layer 51 or the second electrode layer 52), so the liquid crystal material in another sub-unit LU, for example, cannot regulate the switching of light, for example, cannot regulate the switching between the light-blocking state (or fog state) and the light-transmitting state, but is not limited thereto.

[0127] In the present disclosure, by designing the arrangement of the sub-unit U and another sub-unit LU, a smart window (such as a liquid crystal window) can provide pattern or text presentation, for example Figure 9 as shown, when irradiated by sunlight, multiple sub-units U can be switched to the light-blocking state, while another sub-unit LU can be in the light-transmitting state, so that the smart window (such as a liquid crystal window) presents the English letter "O" or "□", but the present disclosure is not limited thereto. The arrangement, quantity, size, and shape of the sub-unit U and another sub-unit LU can be adjusted according to requirements.

[0128] Figure 10A is a top view schematic diagram of the photoelectric conversion element according to an embodiment of the present disclosure. Figure 10B is Figure 10A a cross-sectional schematic diagram of the line segment A-A' of. For the convenience of description, some components are omitted in the figure.

[0129] In an embodiment of the present disclosure, as Figure 10A shown, the electronic device may include multiple photoelectric conversion elements 4 arranged adjacent to each other, and the multiple photoelectric conversion elements 4 are connected in series with each other, but is not limited thereto. More specifically, as Figure 10A and Figure 10B shown, the photoelectric conversion element 4 can be electrically connected to one end of the sixth portion 16C of the fourth metal layer 16 through the conductive layer 15, and the other end of the sixth portion 16C of the fourth metal layer 16 can be electrically connected to the third portion 14C of the third metal layer 14 of another photoelectric conversion element 4, so that the multiple photoelectric conversion elements 4 are connected in series with each other, thereby providing a signal transmission to the driving circuit C (as Figure 1 shown).

[0130] In an embodiment of the present disclosure, as Figure 10B shown, the third insulating layer 104 may include a multi-layer structure. For example, the third insulating layer 104 may include a first sub-insulating layer 1041, a second sub-insulating layer 1042, and a third sub-insulating layer 1043. The second sub-insulating layer 1042 is disposed between the first sub-insulating layer 1041 and the third sub-insulating layer 1043. Among them, the sixth portion 16C of the fourth metal layer 16 can be electrically connected to the third portion 14C of the third metal layer 14 and the conductive layer 15 through the through hole H8 of the first sub-insulating layer 1041 and the through hole H9 of the third sub-insulating layer 1043, respectively, but is not limited thereto. The number of sub-insulating layers of the third insulating layer 104 can be adjusted according to requirements.

[0131] When the light conversion layer 3 (as Figure 1The greater the thickness of the light conversion layer 3 (as shown), the greater the required driving voltage. This can be achieved by setting multiple photoconversion elements 4 and connecting them in series to provide a series voltage to control the light conversion layer 3 (as shown). Figure 1 As shown), the light conversion layer 3 (as shown) Figure 1 (As shown) It can switch between light-blocking and light-transmitting states.

[0132] This disclosure combines the photoelectric conversion element 4 with the driving circuit C. The photoelectric conversion element 4 converts light energy into electrical energy and provides it to the driving circuit C. The driving circuit C can, for example, convert a DC signal into an AC signal and then provide the converted signal to the first electrode layer 51 and the second electrode layer 52. This allows the electronic device to control the light modulation layer 3 without the need for an external power supply, thus achieving a power saving effect.

[0133] The specific embodiments described above should be interpreted as merely illustrative and not as limiting the remainder of this disclosure in any way.

Claims

1. An electronic device, characterized in that, Include: First substrate; A second substrate is disposed opposite to the first substrate; A light modulation layer is disposed between the first substrate and the second substrate; A first electrode layer is disposed between the first substrate and the light modulation layer; A second electrode layer is disposed between the second substrate and the light modulation layer; A photoelectric converter is disposed between the first substrate and the second substrate; and A driving circuit is disposed between the first substrate and the second substrate, wherein the driving circuit is electrically connected to the photoelectric conversion element, and the driving circuit is electrically connected to the first electrode layer and the second electrode layer respectively.

2. The electronic device as claimed in claim 1, characterized in that, It also includes: a conductive structure disposed between the first substrate and the second substrate, wherein the driving circuit is disposed between the first substrate and the light modulation layer, and the driving circuit is electrically connected to the second electrode layer via the conductive structure.

3. The electronic device as claimed in claim 1, characterized in that, It also includes: a first spacer disposed between the first substrate and the second substrate, wherein, in a top view of the first substrate, the first spacer overlaps with the driving circuit.

4. The electronic device as claimed in claim 1, characterized in that, Also includes: A second spacer is disposed between the first substrate and the second substrate; and A signal transmission line is electrically connected to one end of the photoelectric conversion element; In the top view of the first substrate, the second spacer overlaps with the signal transmission line.

5. The electronic device as claimed in claim 1, characterized in that, In the top view of the first substrate, the photoelectric conversion element overlaps with a channel area of ​​the driving circuit.

6. The electronic device as claimed in claim 1, characterized in that, In the top view of the first substrate, the photoelectric conversion element and the driving circuit are spaced apart by a distance.

7. The electronic device as claimed in claim 1, characterized in that, The drive circuit contains multiple transistors.

8. The electronic device as claimed in claim 1, characterized in that, The light-modulating layer contains liquid crystal material or electrochromic material.

9. The electronic device as claimed in claim 1, characterized in that, The photoelectric conversion element includes amorphous silicon PIN solar diodes, copper indium gallium selenide solar cells, perovskite solar cells, or combinations thereof.

10. An electronic device, characterized in that, Include: First substrate; A second substrate is disposed opposite to the first substrate, wherein the first substrate has a first region that overlaps with the second substrate and a second region that does not overlap with the second substrate; A light modulation layer is disposed between the first substrate and the second substrate; A first electrode layer is disposed between the first substrate and the light modulation layer; A second electrode layer is disposed between the second substrate and the light modulation layer; A photoelectric conversion element is disposed on the second region of the first substrate; and A driving circuit is disposed between the first substrate and the second substrate, wherein the driving circuit is electrically connected to the photoelectric conversion element, and the driving circuit is electrically connected to the first electrode layer and the second electrode layer respectively.

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