Thin film jumper resistor and manufacturing method thereof
By depositing a metal bonding layer on a substrate and using laser patterning technology, the processing difficulties of jumper resistors in the prior art have been solved, enabling miniaturized and low-cost manufacturing of thin-film jumper resistors and improving product reliability.
Patent Information
- Application Number
- CN202411127619.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-16
- Publication Date
- 2026-03-03
AI Technical Summary
In the existing technology, surface-mount jumper resistors of large and small sizes present challenges in terms of processing and cost. In particular, the miniaturization and thinning process requires a precise photolithography process, which leads to high costs and large differences in thermal expansion and contraction between the copper material and the carrier, affecting reliability.
The method involves depositing metal bonding layers on the front and back sides of a substrate to form a resistive thin film, and using laser patterning to replace traditional etching and photolithography processes to form the first and second resistive layers. End electrodes are then formed through sputtering and electroplating, achieving precise definition and connection of the resistive layers.
This reduces the impact of temperature changes on the bonding between the resistive film and the substrate, improves product reliability, and enables miniaturized and low-cost manufacturing of thin-film jumper resistors.
Smart Images
Figure CN121601368A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to a manufacturing technique for a passive component, and more particularly to a thin-film jumper resistor and a method for manufacturing the same. Background Technology
[0002] Currently, surface mount (SMD) large-size jumper resistors, such as the SMD 1206 type, are mostly produced by first coating an insulating material directly onto the surface of a copper sheet or foil using printing or photolithography. Then, etching or mechanical cutting is used to expose the uninsulated sections or terminals. Finally, an electrochemically deposited nickel-tin layer suitable for soldering onto a circuit board is applied.
[0003] Because copper is relatively soft, thicker sheets are typically chosen for large jumper resistors. However, thicker copper sheets are more difficult to process and are also more expensive.
[0004] On the other hand, surface-mount small jumper resistors, such as the SMD 0805 type, first use adhesive to attach copper foil to the surface of a rigid carrier such as a substrate or FR4. Then, using printing or photolithography, an insulating material such as solder resist or photoresist is coated onto the surface of the copper foil, exposing both ends of the copper foil as electrodes. Finally, a nickel-tin layer that can be soldered onto a circuit board is electrochemically deposited.
[0005] Due to the large difference in the coefficients of thermal expansion and contraction between copper and the carrier, jumper resistors require more precise photolithography processes to achieve miniaturization or thinning, which results in higher costs. Summary of the Invention
[0006] One objective of this disclosure is to provide a thin-film jumper resistor and its manufacturing method, wherein a metal bonding layer is first deposited on the front and back sides of a substrate, and then a resistive thin film is formed on the metal bonding layer. Since the metal bonding layer can act as a thermal stress buffer between the resistive thin film and the substrate, the impact of temperature changes on the bonding between the resistive thin film and the substrate can be reduced, thereby improving the reliability of the thin-film jumper resistor.
[0007] Another objective of this disclosure is to provide a thin-film jumper resistor and its manufacturing method, which uses laser patterning instead of traditional semiconductor processes such as etching and photolithography to define the resistor layer, thereby enabling the miniaturization of the thin-film jumper resistor and achieving the advantage of low cost.
[0008] According to the above-mentioned objectives of this disclosure, a method for manufacturing a thin-film jumper resistor is provided. In this method, a substrate is provided, wherein the substrate has a front side and a back side, and a first side side and a second side side opposite to each other. A first resistive layer is formed on the front side. Forming the first resistive layer includes patterning the first resistive layer using a laser to separate the first resistive layer from the outer edge of the substrate. A second resistive layer is formed on the back side. Forming the second resistive layer includes patterning the second resistive layer using a laser to separate the second resistive layer from the outer edge of the substrate. Each first resistive layer and second resistive layer includes a middle section, and a first end section and a second end section respectively located on opposite sides of the middle section. A first insulating protective layer is formed covering the middle section of the first resistive layer. A second insulating protective layer is formed covering the middle section of the second resistive layer. A first end electrode is formed, wherein the first end electrode extends from the first end section of the first resistive layer through a first side side of the substrate to a first end section of the second resistive layer. A second end electrode is formed, wherein the second end electrode extends from the second end section of the first resistive layer through a second side side of the substrate to a second end section of the second resistive layer.
[0009] According to one embodiment of the present disclosure, the formation of each first resistive layer and the second resistive layer includes forming a metal bonding layer and forming a copper layer covering the metal bonding layer.
[0010] According to one embodiment of the present disclosure, the formation of the metal bonding layer includes using a sputtering method.
[0011] According to one embodiment of the present disclosure, the light source of the laser is infrared light, ultraviolet light, green light, or a yttrium aluminum garnet (YAG) diode.
[0012] According to one embodiment of this disclosure, in forming each first terminal electrode and the second terminal electrode, a metal interconnect layer is formed by sputtering to connect the first resistive layer and the second resistive layer. A first metal layer is formed to cover the first resistive layer, the metal interconnect layer, and the second resistive layer. A second metal layer is formed to cover the first metal layer. A third metal layer is formed to cover the second metal layer. The formation of the first metal layer, the second metal layer, and the third metal layer includes using an electroplating method.
[0013] In accordance with the aforementioned objectives of this disclosure, a thin-film jumper resistor is further proposed. This thin-film jumper resistor includes a substrate, a first resistive layer, a second resistive layer, a first insulating protective layer, a second insulating protective layer, a first terminal electrode, and a second terminal electrode. The substrate has a front side and a back side, and first side sides and second side sides opposite to each other. The first resistive layer covers the front side and is spaced from the outer edge of the substrate. The second resistive layer covers the back side and is spaced from the outer edge of the substrate. Each first and second resistive layer includes a metal bonding layer, and a resistive film covers the metal bonding layer. Each first and second resistive layer includes a middle section, and first and second terminal sections located on opposite sides of the middle section, respectively. The first insulating protective layer covers the middle section of the first resistive layer. The second insulating protective layer covers the middle section of the second resistive layer. The first terminal electrode extends from the first terminal section of the first resistive layer through a first side side of the substrate to a first terminal section of the second resistive layer. The second terminal electrode extends from the second terminal section of the first resistive layer through a second side side of the substrate to a second terminal section of the second resistive layer.
[0014] According to one embodiment of the present disclosure, the substrate material is alumina (Al2O3), aluminum nitride (AlN), FR4, polyimide (PI), or silicon dioxide (SiO2).
[0015] According to one embodiment of the present disclosure, the thickness of the metal bonding layer is 20 nm to 100 nm, and the thickness of the resistive film is 1 μm to 30 μm.
[0016] According to one embodiment of this disclosure, the material of the metal bonding layer is titanium or a titanium-tungsten alloy, and the material of the resistive film is copper.
[0017] According to one embodiment of the present disclosure, the substrate is a rectangular structure with two long sides and two short sides. The distance between each first resistive layer and the long side is less than 0.15 mm, and the distance between each first resistive layer and the short side is less than 0.15 mm.
[0018] According to one embodiment of the present disclosure, the distance between each of the first and second insulating protective layers and the short side is less than 1 / 3 of the length of the long side.
[0019] According to one embodiment of this disclosure, each of the first and second terminal electrodes includes a metal interconnect layer, a first metal layer, a second metal layer, and a third metal layer. The metal interconnect layer extends from the first resistive layer through a first side or a second side to the second resistive layer, wherein the material of the metal interconnect layer is a nickel-chromium alloy. The first metal layer covers the first resistive layer, the metal interconnect layer, and the second resistive layer, wherein the material of the first metal layer is copper. The second metal layer covers the first metal layer. The third metal layer covers the second metal layer.
[0020] According to one embodiment of the present disclosure, the distance between the top surface of the first metal layer and the top surface of the first insulating protective layer and the distance between the top surface of the second insulating protective layer are equal to or greater than 5 μm. Attached Figure Description
[0021] A better understanding of the features disclosed herein can be obtained from the following detailed description taken in conjunction with the accompanying drawings. It should be noted that, according to industry standard practice, the features are not drawn to scale. In fact, the dimensions of the features can be arbitrarily increased or decreased for clarity of discussion.
[0022] Figure 1 , Figure 2 , Figure 3A , Figure 4A ,and Figures 5 to 7 This is a three-dimensional schematic diagram illustrating the various stages of manufacturing of a thin-film jumper resistor according to an embodiment of the present disclosure.
[0023] Figure 3B For illustration Figure 3A A partial top view of the structure.
[0024] Figure 4B For illustration Figure 4A A partial top view of the structure.
[0025] Figure 8 For illustration Figure 7 A top view schematic diagram of a thin-film jumper resistor.
[0026] Figure 9 For illustration Figure 7 A bottom view of the thin-film jumper resistor.
[0027] Figure 10 To illustrate along Figure 7 A schematic diagram of the cross-section of the thin-film jumper resistor obtained by cutting with section line AA. Detailed Implementation
[0028] The embodiments of this disclosure are discussed in detail below. However, it will be understood that the embodiments provide many applicable concepts that can be implemented in a wide variety of specific situations. The embodiments discussed and disclosed are for illustrative purposes only and are not intended to limit the scope of this disclosure. All embodiments of this disclosure reveal a variety of different features, but these features can be implemented individually or in combination as needed.
[0029] Furthermore, the terms "first," "second," etc., used in this article do not specifically refer to order or sequence; they are merely used to distinguish elements or operations described using the same technical terms.
[0030] The spatial relationship between the two elements described in this disclosure applies not only to the orientation shown in the accompanying drawings, but also to orientations not shown in the drawings, such as inverted orientations. Furthermore, the terms "connection," "electrical connection," or similar expressions used in this disclosure to refer to two components are not limited to a direct or electrical connection, but may also include indirect or electrical connections as needed.
[0031] Please refer to Figure 1 , Figure 2 , Figure 3A , Figure 4A ,and Figures 5 to 7 This is a perspective view illustrating the various stages of manufacturing a thin-film jumper resistor 100 according to an embodiment of the present disclosure. The thin-film jumper resistor 100 can be applied to high-power circuits such as servers, vehicle charging stations, battery management systems (BMS), and engine control units (ECUs). This embodiment describes a process for simultaneously manufacturing multiple thin-film jumper resistors 100; other embodiments may use a process for manufacturing a single thin-film jumper resistor 100. Figure 7 When the thin-film jumper resistor 100 is shown, substrate 200 can be provided first. For example... Figure 1 As shown, substrate 200 has a front side 202 and a back side 204, and a first side 206 and a second side 208 opposite to each other. Both the first side 206 and the second side 208 are bonded between the front side 202 and the back side 204. For example, the material of substrate 200 may be alumina, aluminum nitride, FR4, polyimide, or silicon dioxide.
[0032] Next, as Figure 2 and Figure 3A As shown, a first resistive layer 300 can be formed on the front side 202 of the substrate 200, and a second resistive layer 400 can be formed on the back side 204 of the substrate 200. In some embodiments, when forming the first resistive layer 300, a metal bonding layer 310 is first deposited to cover the front side 202 of the substrate 200, and then a resistive thin film 320 is deposited to cover the metal bonding layer 310 to form the first resistive layer 300. Subsequently, as Figure 3A As shown, the resistive thin film 320 is patterned to define the pattern of the first resistive layer 300 of a plurality of thin film jumper resistors 100. In each thin film jumper resistor 100, the patterning of the first resistive layer 300 is such that the first resistive layer 300 is spaced apart from the outer edge 200e of the substrate 200.
[0033] Similarly, when forming the second resistive layer 400, a metal bonding layer 410 is first deposited on the back surface 204 of the substrate 200, and then a resistive thin film 420 is deposited on the metal bonding layer 410 to form the second resistive layer 400. Next, the resistive thin film 420 is patterned to define the pattern of the second resistive layer 400 for the plurality of thin-film jumper resistors 100. In each thin-film jumper resistor 100, after the second resistive layer 400 is patterned, the second resistive layer 400 is separated from the outer edge 200e of the substrate 200.
[0034] For example, metal bonding layers 310 and 410 can be deposited using sputtering. The thickness of metal bonding layers 310 and 410 can be, for example, from about 20 nm to about 100 nm. The material of metal bonding layers 310 and 410 can be titanium (Ti), titanium-tungsten alloy (TiW), or any suitable low-resistivity metal alloy material, and this disclosure is not limited thereto. In some embodiments, the material of resistive films 320 and 420 is copper, that is, both resistive films 320 and 420 are copper layers. However, this disclosure is not limited thereto, and the material of resistive films 320 and 420 can be any suitable metal or metal alloy. The thickness of resistive films 320 and 420 can be, for example, from about 1 μm to about 30 μm. This embodiment uses laser technology instead of conventional semiconductor processes such as etching and photolithography to define the pattern of the first resistive layer 300 and the second resistive layer 400. For example, the laser light source can be infrared light, ultraviolet light, green light, or a yttrium aluminum garnet diode.
[0035] Please refer to the following: Figure 3B It is a drawing Figure 3A A partial top view of the structure. Figure 3B Taking the front side 202 of substrate 200 and the first resistive layer 300 thereon as an example, the arrangement of the second resistive layer 400 on the back side 204 of substrate 200 is the same as the arrangement of the first resistive layer 300 on the front side 202. In some embodiments, the substrate 200 of each thin-film jumper resistor 100 is a rectangular structure with two long sides 210 and 212, and two short sides 214 and 216. The distance a between the first resistive layer 300 and the second resistive layer 400 and the long sides 210 and 212 is less than 0.15 mm, and the distance b between the first resistive layer 300 and the second resistive layer 400 and the short sides 214 and 216 is less than 0.15 mm. In the example where the thin-film jumper resistor 100 is of 0402 specification, i.e., with a size of 0.4 inches * 0.2 inches (metric 1 mm * 0.5 mm), the distance a can be, for example, 0.05 mm, and the distance b can be, for example, 0.05 mm.
[0036] Each first resistive layer 300 and second resistive layer 400 includes an intermediate segment MS, a first end segment ES1, and a second end segment ES2, wherein the first end segment ES1 and the second end segment ES2 are located on opposite sides of the intermediate segment MS. The first end segment ES1 and the second end segment ES2 can serve as a pair of electrodes for the first resistive layer 300 and the second resistive layer 400.
[0037] In this embodiment, a metal bonding layer 310 is deposited first, followed by a resistive thin film 320. Therefore, the metal bonding layer 310 acts as a stress buffer between the resistive thin film 320 and the substrate 200, reducing the impact of thermal expansion and contraction caused by temperature changes in the thin-film jumper resistor 100 on the bonding between the resistive thin film 320 and the substrate 200, thereby improving product reliability. Furthermore, patterning the first resistive layer 300 using a laser not only allows for precise definition of the pattern of the first resistive layer 300, giving it an accurate resistance value, but also enables miniaturization of the thin-film jumper resistor 100 and achieves a low-cost advantage.
[0038] Next, as Figure 4A As shown, a first insulating protective layer 500 can be formed covering the middle section MS of the first resistive layer 300, and a second insulating protective layer 600 can be formed covering the middle section MS of the second resistive layer 400, using, for example, a printing method. Please refer to... Figure 4B It is a drawing Figure 4A A partial top view of the structure. Figure 4B Taking the front side 202 of substrate 200 and its first resistive layer 300 and first insulating protective layer 500 as an example, the arrangement of the second insulating protective layer 600 on the back side 204 of substrate 200 is the same as the arrangement of the first insulating protective layer 500 on the front side 202. The first insulating protective layer 500 extends from the middle section MS of the first resistive layer 300 through a portion of the front side 202 to the two long sides 210 and 212 of substrate 200. Similarly, the second insulating protective layer 600 extends from the middle section MS of the second resistive layer 400 through a portion of the back side 204 to the two long sides 210 and 212 of substrate 200.
[0039] like Figure 4BAs shown, the first insulating protective layer 500 does not cover the first end segment ES1 and the second end segment ES2 of the first resistive layer 300. The second insulating protective layer 600 does not cover the first end segment ES1 and the second end segment ES2 of the second resistive layer 400. In some embodiments, the distance c between each of the first and second insulating protective layers 500 and the short sides 214 and 216 is less than 1 / 3 of the length L of the long sides 210 and 212. In the example where the thin-film jumper resistor 100 is of specification 0402, the distance c can be, for example, 0.25 mm, which is 1 / 4 of the length L of the long sides 210 and 212. The materials of the first and second insulating protective layers 500 and 600 can be, for example, epoxy resin or resin.
[0040] like Figure 5 As shown, in the example of simultaneously fabricating multiple thin-film jumper resistors 100, it is possible to... Figure 4A The structure is divided into multiple strip structures 700. In the example where each thin-film jumper resistor 100 is fabricated separately, this step is not required. Each strip structure 700 includes a substrate 200 of multiple thin-film jumper resistors 100, a first resistive layer 300, a second resistive layer 400, a first insulating protective layer 500, and a second insulating protective layer 600.
[0041] Next, it can be formed as follows Figure 7 The first terminal electrode 800 and the second terminal electrode 900 are shown. Please also refer to... Figures 8 to 10 They are drawn separately. Figure 7 Top and bottom views of the thin-film jumper resistor 100, and along... Figure 7 A cross-sectional view of the thin-film jumper resistor 100 obtained by cutting along section line AA. The first end electrode 800 extends from the first end segment ES1 of the first resistive layer 300 on the front side 202 of the substrate 200, through the first side 206 of the substrate 200, to the first end segment ES1 of the second resistive layer 400 on the back side 204 of the substrate 200. The first end electrode 800 may cover a portion of the first insulating protective layer 500 adjacent to the first end segment ES1 of the first resistive layer 300, and a portion of the second insulating protective layer 600 adjacent to the first end segment ES1 of the second resistive layer 400. (As shown...) Figure 10 As shown, the cross-sectional shape of the first end electrode 800 is similar to an inverted C.
[0042] The second terminal electrode 900 is opposite to the first terminal electrode 800. The second terminal electrode 900 extends from the second end segment ES2 of the first resistive layer 300 on the front side 202 of the substrate 200, through the second side side 208 of the substrate 200, to the second end segment ES2 of the second resistive layer 400 on the back side 204 of the substrate 200. The second terminal electrode 900 may cover a portion of the first insulating protective layer 500 adjacent to the second end segment ES2 of the first resistive layer 300, and a portion of the second insulating protective layer 600 adjacent to the second end segment ES2 of the second resistive layer 400. Figure 10 As shown, the cross-sectional shape of the second end electrode 900 is C-shaped.
[0043] Both the first terminal electrode 800 and the second terminal electrode 900 may comprise multilayer structures. In some embodiments, such as Figure 6 As shown, when fabricating the first terminal electrode 800 and the second terminal electrode 900, the metal connection layers 810 of the first terminal electrodes 800 and the metal connection layers 910 of the second terminal electrodes 900 of the plurality of thin-film jumper resistors 100 can be formed, for example, by sputtering, on opposite sides of the strip structure 700 to connect the plurality of corresponding first resistance layers 300 and second resistance layers 400. Specifically, as Figure 10 As shown, the metal connection layer 810 of the first terminal electrode 800 extends from the side of the first end segment ES1 of the first resistive layer 300 via the first side surface 206 of the substrate 200 to the side surface of the first end segment ES1 of the second resistive layer 400. The metal connection layer 910 of the second terminal electrode 900 extends from the side of the second end segment ES2 of the first resistive layer 300 via the second side surface 208 of the substrate 200 to the side surface of the second end segment ES2 of the second resistive layer 400. The material of the metal connection layers 810 and 910 can be, for example, a nickel-chromium alloy (NiCr).
[0044] Next, you can first... Figure 6The substrates 200 of the multiple thin-film jumper resistors 100 in the strip structure 700 are separated. Then, using, for example, electroplating, a first metal layer 820 forming the first terminal electrode 800 covers the first end segment ES1 of the first resistor layer 300, the metal connection layer 810, and the first end segment ES1 of the second resistor layer 400; and a first metal layer 920 forming the second terminal electrode 900 covers the second end segment ES2 of the first resistor layer 300, the metal connection layer 910, and the second end segment ES2 of the second resistor layer 400. Specifically, the first metal layers 820 and 920 are derived from electroplating of the unshielded first resistor layer 300, the first end segment ES1 and the second end segment ES2 of the second resistor layer 400, and the metal connection layers 810 and 910. The first metal layer 820 also covers a portion of the first insulating protective layer 500 adjacent to the first end segment ES1 of the first resistor layer 300, and a portion of the second insulating protective layer 600 adjacent to the first end segment ES1 of the second resistor layer 400. The first metal layer 920 also covers a portion of the first insulating protective layer 500 adjacent to the second end segment ES2 of the first resistive layer 300, and a portion of the second insulating protective layer 600 adjacent to the second end segment ES2 of the second resistive layer 400. The material of the first metal layers 820 and 920 may be, for example, copper.
[0045] Please refer to Figure 10 In some embodiments, the distance between the top surface 820t of the first metal layer 820 on the front side 202 of the substrate 200 and the top surface 500t of the first insulating protective layer 500, and the distance between the top surface 820t' of the first metal layer 820 on the back side 204 of the substrate 200 and the top surface 600t of the second insulating protective layer 600, are equal to or greater than 5 μm. Similarly, the distance between the top surface 920t of the first metal layer 920 on the front side 202 of the substrate 200 and the top surface 500t of the first insulating protective layer 500, and the distance between the top surface 920t' of the first metal layer 920 on the back side 204 of the substrate 200 and the top surface 600t of the second insulating protective layer 600, are equal to or greater than 5 μm. This ensures reliable bonding between the thin-film jumper resistor 100 and the external circuit board.
[0046] Next, a second metal layer 830 forming the first terminal electrode 800 covers the first metal layer 820, and a second metal layer 930 forming the second terminal electrode 900 covers the first metal layer 920, for example, by electroplating. The second metal layers 830 and 930 can be electroplated onto the first metal layers 820 and 920, respectively. The material of the second metal layers 830 and 930 can be, for example, nickel.
[0047] Subsequently, a third metal layer 840 covering the second metal layer 830 of the first terminal electrode 800, and a third metal layer 940 covering the second metal layer 930 of the second terminal electrode 900, can be formed using, for example, electroplating. The third metal layers 840 and 940 can be electroplated based on the second metal layers 830 and 930, respectively. The material of the third metal layers 840 and 940 can be, for example, tin, to facilitate bonding with external circuitry.
[0048] As can be seen from the above embodiments, one advantage of this disclosure is that, after depositing metal bonding layers on the front and back sides of the substrate, a resistive thin film is formed on the metal bonding layers. Since the metal bonding layer can act as a thermal stress buffer between the resistive thin film and the substrate, the impact of temperature changes in the thin film jumper resistor on the bonding between the resistive thin film and the substrate can be reduced, thereby improving the reliability of the thin film jumper resistor.
[0049] Another advantage of this disclosure is that it uses laser patterning instead of traditional semiconductor processes such as etching and photolithography to define the resistor layer, thereby enabling the miniaturization of thin-film jumper resistors and achieving the advantage of low cost.
[0050] Although this disclosure has been shown above by way of embodiments, it is not intended to limit this disclosure. Any person skilled in the art may make various modifications and refinements without departing from the spirit and scope of this disclosure. Therefore, the scope of protection of this disclosure shall be determined by the appended claims.
[0051] [Symbol Explanation]
[0052] 100: Thin-film jumper resistor
[0053] 200:Substrate
[0054] 200e: outer edge
[0055] 202: Front
[0056] 204: Back
[0057] 206: First side view
[0058] 208: Second side view
[0059] 210: Long side
[0060] 212: Long side
[0061] 214: Short side
[0062] 216: Short side
[0063] 300: First resistive layer
[0064] 310: Metal bonding layer
[0065] 320: Resistive thin film
[0066] 400: Second resistive layer
[0067] 410: Metal bonding layer
[0068] 420: Resistive thin film
[0069] 500: First insulating protective layer
[0070] 500t: Top surface
[0071] 600: Second insulating protective layer
[0072] 600t: Top surface
[0073] 700: Strip structure
[0074] 800: First terminal electrode
[0075] 810: Metal bonding layer
[0076] 820: First metal layer
[0077] 820t: Top surface
[0078] 820t': Top surface
[0079] 830: Second metal layer
[0080] 840: Third metal layer
[0081] 900: Second terminal electrode
[0082] 910: Metal bonding layer
[0083] 920: First metal layer
[0084] 920t: Top surface
[0085] 920t': Top surface
[0086] 930: Second metal layer
[0087] 940: Third metal layer
[0088] AA: Section line
[0089] a: distance
[0090] b: Distance
[0091] c: distance
[0092] ES1: First end segment
[0093] ES2: Second Endpoint
[0094] L: Length
[0095] MS: Middle section.
Claims
1. A method for manufacturing a thin-film jumper resistor, characterized in that, The method for manufacturing the thin-film jumper resistor includes: A substrate is provided, wherein the substrate has a front side and a back side, and a first side side and a second side side opposite to each other; Forming a first resistive layer on the front side, wherein forming the first resistive layer includes patterning the first resistive layer using a laser to separate the first resistive layer from the outer edge of the substrate; Forming a second resistive layer on the back side, wherein forming the second resistive layer includes patterning the second resistive layer using the laser to separate the second resistive layer from the outer edge of the substrate, wherein each of the first resistive layer and the second resistive layer includes a middle section and a first end section and a second end section located on opposite sides of the middle section, respectively. A first insulating protective layer is formed covering the middle section of the first resistive layer; A second insulating protective layer is formed covering the middle section of the second resistive layer; A first end electrode is formed, wherein the first end electrode extends from a first end segment of the first resistive layer, through a first side surface of the substrate, to a first end segment of the second resistive layer; and A second end electrode is formed, wherein the second end electrode extends from the second end segment of the first resistive layer through the second side of the substrate to the second end segment of the second resistive layer.
2. The method for manufacturing a thin-film jumper resistor according to claim 1, characterized in that, Each of forming the first resistive layer and the second resistive layer comprises: Forming a metal bonding layer; and A copper layer is formed to cover the metal bonding layer.
3. The method for manufacturing a thin-film jumper resistor according to claim 2, characterized in that, The formation of the metal bonding layer includes using a sputtering method.
4. The method for manufacturing a thin-film jumper resistor according to claim 1, characterized in that, The laser light source is infrared light, ultraviolet light, green light, or a yttrium aluminum garnet diode.
5. The method for manufacturing a thin-film jumper resistor according to claim 1, characterized in that, Each of the first terminal electrode and the second terminal electrode comprises: A metal connection layer is formed by sputtering to connect the first resistive layer and the second resistive layer; A first metal layer is formed to cover the first resistive layer, the metal interconnect layer, and the second resistive layer; A second metal layer is formed to cover the first metal layer; as well as A third metal layer is formed to cover the second metal layer, wherein forming the first metal layer, the second metal layer, and the third metal layer includes using an electroplating method.
6. A thin-film jumper resistor, characterized in that, The thin-film jumper resistor includes: The substrate has a front side and a back side, as well as a first side side and a second side side that are opposite to each other; A first resistive layer covers the front side and is spaced from the outer edge of the substrate; A second resistive layer covers the back surface and is spaced from the outer edge of the substrate, wherein each of the first resistive layer and the second resistive layer includes a metal bonding layer and a resistive film covering the metal bonding layer, and each of the first resistive layer and the second resistive layer includes a middle section and a first end section and a second end section located on opposite sides of the middle section, respectively. A first insulating protective layer covers the middle section of the first resistive layer; A second insulating protective layer covers the middle section of the second resistive layer; The first terminal electrode extends from the first end segment of the first resistive layer, through the first side of the substrate, to the first end segment of the second resistive layer. as well as The second terminal electrode extends from the second end segment of the first resistive layer, through the second side of the substrate, to the second end segment of the second resistive layer.
7. The thin-film jumper resistor according to claim 6, characterized in that, The substrate is made of alumina, aluminum nitride, FR4, polyimide, or silicon dioxide.
8. The thin-film jumper resistor according to claim 6, characterized in that, The thickness of the metal bonding layer is 20 nm to 100 nm, and the thickness of the resistive film is 1 μm to 30 μm.
9. The thin-film jumper resistor according to claim 6, characterized in that, The metal bonding layer is made of titanium or a titanium-tungsten alloy, and the resistive film is made of copper.
10. The thin-film jumper resistor according to claim 6, characterized in that, The substrate has a rectangular structure with two long sides and two short sides. The distance between each of the first resistive layer and the second resistive layer and the plurality of long sides is less than 0.15 mm, and the distance between each of the first resistive layer and the second resistive layer and the plurality of short sides is less than 0.15 mm.
11. The thin-film jumper resistor according to claim 10, characterized in that, The distance between each of the first and second insulating protective layers and the plurality of short sides is less than 1 / 3 of the length of the plurality of long sides.
12. The thin-film jumper resistor according to claim 6, characterized in that, Each of the first terminal electrode and the second terminal electrode includes: A metal connection layer extends from the first resistive layer through the first side or the second side to the second resistive layer, wherein the material of the metal connection layer is a nickel-chromium alloy. A first metal layer covers the first resistive layer, the metal connection layer, and the second resistive layer, wherein the material of the first metal layer is copper; A second metal layer covers the first metal layer; as well as A third metal layer covers the second metal layer.
13. The thin-film jumper resistor according to claim 12, characterized in that, The distance between the top surface of the first metal layer and the top surface of the first insulating protective layer and the distance between the top surface of the second insulating protective layer are equal to or greater than 5 μm.